CN111108588B - 具有增强的抗等离子体特性的粘结材料及相关的方法 - Google Patents

具有增强的抗等离子体特性的粘结材料及相关的方法 Download PDF

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CN111108588B
CN111108588B CN201880060092.9A CN201880060092A CN111108588B CN 111108588 B CN111108588 B CN 111108588B CN 201880060092 A CN201880060092 A CN 201880060092A CN 111108588 B CN111108588 B CN 111108588B
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bonding
sheet
region
etch
adhesive sheet
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CN111108588A (zh
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杰森·瑞特
安格斯·麦克法登
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Technetics Group LLC
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Abstract

本技术的几个实施方式针对具有增强的抗等离子体特性的粘结片材，并用于粘结至半导体器件。在一些实施方式中，根据本技术的粘结片材包括基底粘结材料，其具有嵌入其中的一个或多个热传导元件，以及一个或多个蚀刻了的开口，其形成在相邻半导体部件的特定区域或对应特征周围。粘结材料可以包括PDMS，FFKM，或硅基聚合物，并且抗刻蚀部件可以包括PEEK，或涂覆PEEK的部件。

Description

具有增强的抗等离子体特性的粘结材料及相关的方法
相关申请
本申请要求于2017年9月15日提交的美国临时专利申请序列号62/559,008的优先权，其全部内容通过引用并入本文。
技术领域
本公开涉及在半导体器件处理期间使用的粘结材料，并且更具体地涉及对等离子体和/或刻蚀处理具有增强的抵抗特性的粘结材料。
背景技术
半导体组件包括使用一种或多种粘结材料彼此附接的单独的半导体部件或零件。在处理腔中操作期间，单独的部件和粘结材料暴露于等离子体环境中，例如在可能会损坏粘结材料的温度和化学成分下进行的刻蚀处理。在这样的环境中，粘结材料可能会受到严重的腐蚀，从而导致粘结材料的寿命缩短并且层离的可能性增加。
另外，粘结材料的腐蚀可导致半导体制造腔内的颗粒以及热不均匀性的增加。解决该问题的一种方法是使用具有高等离子体抗性的粘结材料以防止腐蚀。然而，该方法的一个缺点是抗等离子体的材料可能非常昂贵，并且会随着时间的流逝而消耗。如此，这种方法的费用使其在许多半导体部件上的使用是不切实际的。尝试解决该问题的另一种方法是屏蔽粘结材料以免受等离子体刻蚀处理的影响，使得粘结材料不暴露于等离子体环境中。然而，这种方法对于许多应用来说也变得不切实际，因为持续不断地需要半导体部件的几何尺寸变得更小，因此常常很难完全屏蔽粘结材料而使其不被暴露。因此，需要其他方法以提供具有更大的承受等离子体和刻蚀处理能力的粘结材料。
附图简要说明
图1A是根据本技术的实施方式的沿图1B的线1A-1A截取的半导体组件的示意性横断面图。
图1B是根据本技术的实施方式的沿图1A的线1B-1B截取的图1A中所示的半导体组件的示意性俯视图。
图2A-2E是根据本技术的实施方式的形成半导体组件的方法的示意性横断面图。
具体实施方式
在下面的实施方式中，讨论了许多具体细节以提供对本技术的实施方式的透彻和可行的描述。然而，相关领域的技术人员将认识到，可以在没有一个或多个具体细节的情况下实践本公开。在其他情况下，通常与半导体器件相关联的众所周知的结构或操作未被示出或未被详细描述，以避免模糊技术的其他方面。通常，应当理解，除了本文公开的那些特定实施方式之外，各种其他器件，系统，和方法也可以在本技术的范围内。
如上所述，用于粘结半导体器件和/或零件的粘结材料的设计一直在持续以满足不断提高的承受通常会导致大量颗粒生成的等离子体环境和化学的需求。因此，根据本技术的粘合材料的几个实施方式包括粘结片材，当暴露于等离子体环境中时，粘结片材与常规粘结材料相比得到明显更少的颗粒生成。本技术的粘结材料处于第一半导体部件和第二半导体部件之间，并且将第一半导体部件附接至第二半导体部件。粘结片材可以包括基底粘结材料和并入其中的多个热传导元件。热传导元件可以包括有机和/或无机填料，并且在一些实施方式中被配置为在半导体处理期间分解为气相。粘结片材还可以包括填充有抗刻蚀部件的蚀刻了的开口。
图1A是半导体组件100(“组件100”)的示意性横断面图，图1B是沿图1A的线1B-1B截取的组件100的示意性俯视图。同时参考图1A和图1B，组件100包括第一半导体部件101，第二半导体部件102，和粘结片材110，粘结片材110具有附接至第一半导体部件101的第一面111和附接至第二半导体部件102的第二面112。
第一半和第二导体部件101，102各自可以包括半导体组件的一个或多个零件或基板，包括但不限于再分布(redistribution)结构，中介层，印刷电路板，介电间隔物，半导体裸片(die)(例如逻辑裸片)，或相关领域中已知的另一种合适的基板。第一半导体部件101和第二半导体部件102可以由适合于半导体处理方法的多种材料中的任何一种形成，包括硅，玻璃，陶瓷材料(例如，氧化铝，氮化铝，或铝合金)，砷化镓，氮化镓，有机层压体等。
粘结片材110可以包括粘结材料115，并入粘结材料115中的热传导元件120(例如，颗粒填料)，不同宽度且至少部分地延伸穿过粘结片材110的多个开口130a-d(统称为“开口130”)，以及一个或多个开口130内的抗刻蚀部件125。在一些实施方式中，粘结片材110还可包括粘合促进剂，和/或其他元件以阻止粘结材料115内的聚合或交联。
粘结片材110可以是自支撑片材，不可压缩并且被配置为通过模切，激光切割，或相关领域中的其他已知的等离子体蚀刻处理来图案化。如下面更详细地描述，粘结片材110可以被制造成包括针对总体平整度，厚度，热传导率，伸长率和/或其他设计因素的规格。这些因素中的每一个可以根据粘结片材110针对的特定应用而变化，并且通常，平整度，厚度，热传导率和伸长率针对这些性能可以是任何希望的值。在一些实施方式中，片材可以包括(a)在粘结片材110的整个表面宽度上小于约20微米的平整度规格，(b)约200微米或更大，约120微米，或小于约100微米的厚度规格，(c)小于约0.30W/m·K，约0.3W/m·K至约0.5W/m·K，或约0.25W/m·K至约0.8W/m·K的热传导率规格，以及(d)约5％至约18％的伸长率规格。粘结片材110还可以包括热均匀性规格，其将粘结片材110的整个表面上的温差限制为约2℃或更低。
粘结材料115可以包括具有约-60℃到约180℃或更高的操作温度范围的聚合物粘合剂。在一些实施方式中，粘结材料115可以包括硅基聚合物，例如聚二甲基硅氧烷(PDMS)，或含氟弹性体(FKM)，例如全氟弹性体(FFKM)。如下面更详细地描述，粘结材料115被配置为经图案化和蚀刻以在第一和/或第二半导体部件101，102上产生与对应特征(例如，气孔，液孔，电源连接等)相邻的开口130。
如前所述，粘结材料115可以包括并入粘结材料115内的一个或多个热传导元件120。热传导元件120可以包括氮化硼(BN)颗粒(例如，立方-BN)或其他材料，和/或悬在粘结材料115中并被配置为当暴露于等离子体处理时分解为气相的有机填料(例如，二氧化硅颗粒)。如此，在一些实施方式中，当粘结材料115暴露于等离子体和/或蚀刻处理中时，热传导元件120不产生颗粒或产生相对较少的颗粒。在一些实施方式中，热传导元件120的颗粒尺寸可以包括不同尺寸的颗粒的基质，并且可以具有尺寸在约1纳米至约10微米之间变化的表面宽度或直径。存在于粘结材料115中的热传导元件120的量可在约5％至约25％或更大的范围内变化，并且可用于改变前述粘结片材110的一种或多种规格。例如，氮化硼颗粒高于PDMS的热传导率且低于PDMS的弹性。因此，当粘结片材由PDMS制成时，粘结材料115内的氮化硼颗粒将增加粘结片材110的热传导率并降低弹性。氮化硼颗粒还可以提高粘结片材110的机械强度。有机填料可以包括与氮化硼相似的规格，并且可以以类似方式调节颗粒相对于粘结材料115的百分比。存在于粘结材料115中的热传导元件的量也可以用于稀释粘结片材110中使用的粘结材料115的相对量。一些粘结材料115，例如FFKM，是相对昂贵的原材料，可以使用热传导元件(例如，二氧化硅)以减少FFKM的量，从而降低粘结片材110的总成本。
放置在粘结片材110的开口130内的抗刻蚀部件125可以对等离子体处理具有特定抗腐蚀性，该抗腐蚀性至少等于粘结材料115的抗腐蚀性。抗刻蚀部件125可以包括块状陶瓷材料和/或涂覆有一种或多种抗等离子体材料的元件。在一些实施方式中，抗刻蚀部件125可包括聚醚醚酮(PEEK)，FFKM，和/或涂覆有抗等离子体涂层的PEEK盘(disc)，例如氧化钇(Y2O3)，氟化钇(YF3)，氟氧化钇(YOF)。可以在相对较低的温度(例如25℃)下使用薄膜沉积处理来形成涂覆的PEEK盘。在一些实施方式中，例如当粘结材料115包括FFKM时，由于FFKM对等离子体处理具有足够的抗性而不需要额外的抗刻蚀部件，因此可以省略抗刻蚀部件125。在这样的实施方式中，可以单独使用包括FFKM和嵌入其中的热传导颗粒的粘结片材以将半导体器件彼此粘结。
如图1B所示的说明性实施方式所示，抗蚀刻部件125可以被配置成处于具有不同宽度的开口130内，和/或开口130的尺寸可经设置以容纳抗蚀刻部件125。图1B所示的说明性实施方式仅旨在举例说明开口130的一些不同的尺寸，构造，和空间朝向以及可以包括在粘结片材110内的抗蚀刻部件125。在其它实施方式中，开口130和抗蚀刻部件125可以包括其它尺寸，构造和空间朝向。例如，在一些实施方式中，开口130可以全部具有大体相同的宽度。
本技术的一些实施方式的一个好处是形成可以暴露于等离子体处理而不会产生大量颗粒的粘结片材的能力。例如，由于热传导元件可以被配置为在暴露于等离子体处理时分解成气体且所述抗蚀刻组件被配置成至少部分地抵抗等离子体处理，粘结片暴露于等离子体处理相对于传统粘结片材产生更少的颗粒。如此，通过限制等离子体处理过程中产生的颗粒的量，粘结片材的强度从而在更长时间内得到保持且附接的第一和/或第二半导体器件层离的可能性降低。
本技术的一些实施方式的叉一个好处是产生能够在承受等离子体和蚀刻处理同时还能够相对便宜地生产的粘结片材的能力。用抗等离子体部件形成粘结片材可能是不切实际的，因为这种部件的原材料太过昂贵。然而，利用本技术，抗蚀刻部件被并入整个粘结材料的特定区域中，因此能以较低的成本生产并且能够用于更多的半导体器件处理应用中。
本技术的一些实施方式的另一个优点是能够将粘结片材图案化到非常高的公差。与在接合过程中分散，可流动且通常难以以高水平的精度进行图案化的液体成分不同，可以根据待用抗蚀刻成分覆盖的相邻半导体器件上相应特征的特定尺寸来精确地切割片材。这种更精确地切割粘结片材的能力因此可以减少特征周围所需的排他区域的数量，并确保实际上仅去除了最小量的粘结材料。结果，剩余的额外粘结材料可以提供与相邻半导体器件的更牢固的粘结，并通过传导来提供更多的热流，从而在粘结材料的整个表面上产生更好的热均匀性。
图2A-2E是说明形成半导体组件200(“组件200”)(图2B-2E)的方法的示意性横截面图。首先参考图2A，粘结片材110包括粘结材料115以及分布和/或悬在粘结材料115内的热传导元件120。粘结片材110可以进一步包括基本上覆盖粘结片材110的第一面111的第一保护材料205，基本上覆盖粘结片材110的第二面112的第二保护材料206。第一和第二保护材料205，206可以是例如粘合膜(例如，裸片附接膜)，环氧树脂，胶带，糊料，或其他合适的材料。在一些实施方式中，第一和第二保护材料205，206是相同的材料和/或具有基本相同的厚度。
图2B示出了从粘结片材110去除(例如，剥离)第二保护材料206并且使粘结片材110的第二面112与第二半导体部件102接触之后的组件200。然后可以对粘结片材110的第一面111进行模切，激光切割和/或暴露于光刻技术以在粘结片材110中形成一个或多个开口(图2C)。如图2B的说明性实施方式所示，可以在粘结片材110的第一面111上设置或形成掩模210(例如，光致抗蚀剂)以在第二半导体部件102的相应特征(诸如气孔，流体孔，电源连接，或其他独特区域)周围选择性地使粘结片材110图案化。如前所述，可以相对于传统的液体粘结材料以更高的精度切割粘结片材110，并且因此可以使围绕第二半导体器件102的特征的所需间隙最小化。在一些实施方式中，粘结片材110和/或待粘结至粘结片材110的相邻半导体部件可以包括一个或多个对准销或标记，以帮助确保将掩模210精确地定位在第二半导体器件102的相应特征周围。
接下来参考图2C和2D，形成延伸穿过粘结片材110延伸的开口130，并随后用抗蚀刻部件125填充。如前所述，抗蚀刻部件125可以包括实心PEEK盘(例如，垫圈)，被配置为在粘结片材110中形成的特定开口130中合适地放置。在这样的实施方式中，PEEK盘的厚度可以约等于粘结片材110的厚度。在其他实施方式中，抗蚀刻部件125可以是液体形式，并且可以分散在粘结片材110上，从而填充开口130。图2E示出了在从粘结片材110上去除第一保护材料205并且使第一半导体部件101与粘结片材110的第一面111接触后的组件200。
在其他实施方式中，本技术可以以不同于先前公开的方式和/或以不同的顺序来粘结半导体部件。例如，在一些实施方式中，粘结材料和并入在其中的并入热传导元件可以以液体形式存在。在这样的实施方式中，可将抗蚀刻部件125放置在第一半导体部件的特定区域上，然后可将液体粘结材料和并入的热传导元件分散在抗蚀刻部件125上。液体粘结材料然后可固化以形成粘结片材。
本公开并非旨在穷举或将本技术限制为本文公开的精确形式。尽管本文出于说明性目的公开了特定实施方式，但是如本领域的普通技术人员将认识到的，在不背离本技术的情况下，各种等效修改是可能的。在一些情况下，没有示出或详细描述众所周知的结构和功能，以避免不必要地使本技术的实施方式的描述变得含糊。尽管本文中可以以特定顺序呈现方法的步骤，但是替代实施方式可以以不同顺序执行步骤。类似地，在特定实施方式的上下文中公开的本技术的某些方面可以在其他实施方式中被组合或消除。此外，尽管可能已经在那些实施方式的上下文中公开了与本技术的某些实施方式相关的优点，但是其他实施方式也可以表现出这样的优点，且并非所有实施方式都需要表现出这种优点或本文公开的其他优点才落入本技术的范围内。因此，本公开和相关技术可以涵盖本文未明确示出或描述的其他实施方式，并且除所附权利要求书之外本发明不受限制。
在本公开全文中，单数术语“一(a)”，“一个(an)”和“该(the)”包括复数对象，除非上下文另外明确指出。类似地，除非单词“或”被明确地限制为是指相对于两个或多个项目的列表而言与其他项目互斥的仅单个项目，否则在该列表中使用“或”应解释为包括(a)列表中的任何单个项目，(b)列表中的所有项目，或(c)列表中项目的任意组合。另外，术语“包括(comprising)”，“包括(including)”和“具有(having)”在全文中用于表示至少包括所引述的特征或多个特征，从而不排除任何更多数量的相同特征和/或其他类型的其他特征。本文中对“一个实施方式”，“一实施方式”或类似表述的引用意味着结合该实施方式描述的特定特征，结构，操作，或特性可以包括在本技术的至少一个实施方式中。因此，本文中此类短语或表述的出现不一定全都指同一实施方式。此外，在一个或多个实施方式中，多种特定的特征，结构，操作，或特性可以以任何合适的方式组合。如本文所用，除非另有说明，当在数值之前时，“约”或“大致”应解释为表示该数值的正负10％。例如，应将约200微米的厚度解释为覆盖180微米至220微米的厚度。

Claims (20)

1.用于半导体部件的粘结片材，所述粘结片材包括：
被配置为附接至第一半导体部件的第一面；
被配置为附接至第二半导体部件的第二面；
设置在所述粘结片材的第一区域中的抗刻蚀材料；
设置在所述粘结片材的第二区域中的粘结材料；以及
嵌入在所述第二区域中的所述粘结材料内的多个热传导元件，
其中单独的第一区域与单独的第二区域不同并且位于单独的第二区域附近；以及
其中所述粘结片材具有：
小于200微米的厚度，
在所述粘结片材的整个长度上的小于20微米的平整度，以及
小于20％的伸长率规格。
2.根据权利要求1所述的粘结片材，其中所述热传导元件被配置为当暴露于等离子体处理时分解为气体。
3.根据权利要求1所述的粘结片材，其中：
所述粘结材料包括聚二甲基硅氧烷(PDMS)和含氟弹性体(FKM)中的至少一种，
所述抗刻蚀材料包括聚醚醚酮(PEEK)，以及
所述热传导元件包括有机填料，该有机填料被配置为当暴露于等离子体处理时分解为气体。
4.根据权利要求1所述的粘结片材，还包括：
小于0.3W/m·K的热传导率，以及
热均匀性，使得在-60℃至180℃的温度范围内，所述粘结片材的整个表面上的温差等于或小于2℃。
5.根据权利要求1所述的粘结片材，其中所述粘结材料包括聚二甲基硅氧烷(PDMS)。
6.根据权利要求1所述的粘结片材，其中所述粘结材料包括含氟弹性体(FKM)。
7.根据权利要求1所述的粘结片材，其中所述第一区域对应于所述粘结片材中填充有所述抗刻蚀材料的开口，其中至少一部分所述开口的直径彼此不同，并且其中至少一部分所述开口被配置为定位成与所述第一半导体部件上的多个特征，所述第二半导体部件上的多个特征，或这两者均对齐。
8.根据权利要求1所述的粘结片材，其中所述热传导元件包括悬在所述粘结材料中的颗粒，所述颗粒包括二氧化硅颗粒和氮化硼(BN)中的至少一种。
9.根据权利要求8所述的粘结片材，其中所述热传导元件包括所述粘结片材的所述粘结材料的至少20％。
10.根据权利要求1所述的粘结片材，其中所述抗刻蚀材料包括聚醚醚酮(PEEK)。
11.根据权利要求10所述的粘结片材，其中所述抗刻蚀材料包括抗等离子体涂层，该抗等离子体涂层包括氧化钇(Y2O3)，氟化钇(YF3)，和氟氧化钇(YOF)中的至少一种。
12.根据权利要求1所述的粘结片材，其中所述第一区域和第二区域中的每一个自所述第一面至所述第二面延伸穿过整个粘结片材，并且其中，所述粘结片材的最外表面在所述抗刻蚀材料和所述粘结材料之间交替。
13.根据权利要求1所述的粘结片材，还包括所述粘结材料中的被配置为抑制所述粘结材料聚合或交联的一种或多种粘合促进剂。
14.一种用于将一个或多个半导体部件彼此附接的装置，所述装置包括：
粘结片材，包括：
被配置为附接至第一半导体部件的第一面，
与所述第一面相对并被配置为附接至第二半导体部件的第二面，
基本上横跨所述粘结片材厚度的粘结材料，其中所述粘结材料包括全氟弹性体(FFKM)；
设置在自所述第一面至所述第二面延伸穿过所述粘结片材的开口中的抗刻蚀材料；以及
嵌入所述粘结材料中的多个热传导元件，所述热传导元件被配置为当暴露于等离子体处理时分解为气体。
15.根据权利要求14所述的装置，其中：
所述抗刻蚀材料设置在所述粘结片材的第一区域中，以及
所述粘结材料设置在所述粘结片材的与所述第一区域不同的第二区域中，所述第二区域包括开口。
16.根据权利要求14所述的装置，其中：
所述粘结材料包括聚二甲基硅氧烷(PDMS)和含氟弹性体(FKM)中的至少一种，
所述抗刻蚀材料包括聚醚醚酮(PEEK)，以及
所述热传导元件包括有机填料。
17.根据权利要求14所述的装置，其中所述厚度小于200微米，
热传导率小于0.3W/m·K，
粘结片材的整个长度上的平整度小于20微米，以及
伸长率规格小于20％。
18.用于半导体部件的粘结片材，所述粘结片材包括：
被配置为附接至第一半导体部件的第一面，
被配置为附接至第二半导体部件的第二面，
设置在所述粘结片材的第一区域中的抗刻蚀材料；
设置在所述粘结片材的第二区域中的粘结材料；
嵌入在所述第二区域中的所述粘结材料内的多个热传导元件，
小于0.3W/m·K的热传导率，以及
热均匀性，使得在-60℃至180℃的温度范围内，所述粘结片材的整个表面上的温差等于或小于2℃；
其中单独的第一区域与单独的第二区域不同并且位于单独的第二区域附近。
19.用于半导体部件的粘结片材，所述粘结片材包括：
被配置为附接至第一半导体部件的第一面，
被配置为附接至第二半导体部件的第二面，
设置在所述粘结片材的第一区域中的抗刻蚀材料，其中所述抗刻蚀材料包括聚醚醚酮(PEEK)且所述抗刻蚀材料包括抗等离子体涂层，该抗等离子体涂层包括氧化钇(Y2O3)，氟化钇(YF3)，和氟氧化钇(YOF)中的至少一种；
设置在所述粘结片材的第二区域中的粘结材料；
嵌入在所述第二区域中的所述粘结材料内的多个热传导元件，
其中单独的第一区域与单独的第二区域不同并且位于单独的第二区域附近。
20.一种用于将一个或多个半导体部件彼此附接的装置，所述装置包括：
粘结片材，包括：
被配置为附接至第一半导体部件的第一面，
与所述第一面相对并被配置为附接至第二半导体部件的第二面，
基本上横跨所述粘结片材厚度的粘结材料；
设置在自所述第一面至所述第二面延伸穿过所述粘结片材的开口中的抗刻蚀材料；以及
嵌入所述粘结材料中的多个热传导元件，所述热传导元件被配置为当暴露于等离子体处理时分解为气体；
其中所述厚度小于200微米，
热传导率小于0.3W/m·K，
粘结片材的整个长度上的平整度小于20微米，以及
伸长率规格小于20％。
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