TWI793652B - 半導體記憶裝置 - Google Patents
半導體記憶裝置 Download PDFInfo
- Publication number
- TWI793652B TWI793652B TW110123267A TW110123267A TWI793652B TW I793652 B TWI793652 B TW I793652B TW 110123267 A TW110123267 A TW 110123267A TW 110123267 A TW110123267 A TW 110123267A TW I793652 B TWI793652 B TW I793652B
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- Prior art keywords
- semiconductor
- memory device
- semiconductor chip
- semiconductor wafer
- aforementioned
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 259
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Abstract
本發明之其中一個實施形態,係提供一種能夠使半導體晶片更進一步高積體化之半導體記憶裝置。
由其中一個實施形態所致之半導體記憶裝置,係具備有基板、和第1半導體晶片、和第2半導體晶片。第1半導體晶片,係具有與基板相接之第1面、和第1面之相反側之第2面、以及被設置於第2面處之第1墊片。第2半導體晶片,係具有與第2面相接之第3面、和第3面之相反側之第4面、以及切缺部。切缺部,係被設置於側面與第3面所相交叉之角部處,該側面,係位於第3面與第4面之間。切缺部,係從第4面之上方作觀察時會與第1墊片之至少一部分相互重疊。
Description
本實施形態,係有關於半導體記憶裝置。
[關連申請案]
本申請案,係享受以日本專利申請2020-155713號(申請日:2020年9月16日)作為基礎申請之優先權。本申請案,係藉由參照此基礎申請案,而包含基礎申請案之所有的內容。
在像是NAND型EEPROM(電子抹除式可複寫唯讀記憶體,Electrically Erasable Programmable Read-Only Memory)等一般之半導體記憶裝置中,複數之記憶體晶片係被層積於基板上。被作層積之記憶體晶片與基板之間,係藉由金屬打線而被作接合。又,在半導體記憶裝置中,係期望能夠達成記憶體晶片之高積體化。
本發明之其中一個實施形態,係提供一種能夠使半導體晶片更進一步高積體化之半導體記憶裝置。
由其中一個實施形態所致之半導體記憶裝置,係具備有基板、和第1半導體晶片、和第2半導體晶片。第1半導體晶片,係具有與基板相接之第1面、和第1面之相反側之第2面、以及被設置於第2面處之第1墊片。第2半導體晶片,係具有與第2面相接之第3面、和第3面之相反側之第4面、以及切缺部。切缺部,係被設置於側面與第3面所相交叉之角部處,該側面,係位於第3面與第4面之間。切缺部,係從第4面之上方作觀察時會與第1墊片之至少一部分相互重疊。
以下,參照圖面,對本發明之實施形態作說明。在以下之實施形態中,基板之上下方向,係代表在將半導體晶片所被作設置之面設為上的情況時之相對方向。圖面係為作示意性或概念性展示者。在說明書與圖面中,針對相同之要素,係附加相同的元件符號。
(第1實施形態)
第1圖,係為對於第1實施形態之半導體記憶裝置1之構成的其中一例作展示之半導體記憶裝置1之剖面圖。半導體記憶裝置1,係具備有配線基板11、和接著層群30、和接著層40、和半導體晶片群CH1、和半導體晶片CH2、和打線群W1、和打線W2、和樹脂23、以及金屬凸塊B。
配線基板11,例如係為印刷基板等之基板。配線基板11,係亦可為矽基板。配線基板11,係能夠經由打線群W1以及打線W2而分別與半導體晶片群CH1以及半導體晶片CH2作連接。
在接著層群30中,係包含有複數之接著層。在接著層群30中所包含之接著層以及接著層40,例如,係身為薄膜狀之樹脂(晶片黏結薄膜,DAF、Die Attach Film)。接著層群30以及接著層40,係被設置在配線基板11之上方。在第1圖所示之例中,接著層群30,係包含有複數之接著層31、32、33。
半導體晶片群CH1,係身為將複數之半導體晶片相互重合並作了接著者。亦即是,半導體晶片群CH1係具有層積構造。半導體晶片群CH1之層積數,係因應於記憶體容量而被作設定。半導體晶片群CH1,係藉由接著層群30而被接著於配線基板11上。
半導體晶片CH2,例如係為控制器晶片。半導體晶片CH2,係被與半導體晶片群CH1作電性連接並對於半導體晶片群CH1之動作進行控制。半導體晶片CH2,例如,係如同第1圖中所示一般,與半導體晶片群CH1相互鄰接地而被作設置,並藉由接著層40而被接著於配線基板11處。又,半導體晶片CH2,例如,係亦可被設置在半導體晶片群CH1之上方。又,半導體晶片CH2,係具有用以與打線W2作連接之墊片P2。
打線群W1,係將配線基板11與半導體晶片群CH1作電性連接。在打線群W1中,係包含有複數之打線。在打線群W1中所包含之打線的素材,例如,係身為金、銀或銅等之導電性金屬。
打線W2,係將配線基板11與半導體晶片CH2作電性連接。打線W2之素材,例如,係身為金、銀或銅等之導電性金屬。
樹脂23,例如,係為環氧樹脂。樹脂23,係將半導體晶片群CH1、半導體晶片CH2、打線群W1以及打線W2在配線基板11之上面而作密封。藉由此,樹脂23,係保護半導體晶片群CH1、半導體晶片CH2、打線群W1以及打線W2免於受到從外部而來之衝擊或者是外部大氣的影響。
金屬凸塊B,例如,係為焊錫球。金屬凸塊B,係將半導體記憶裝置1與外部之安裝基板等(未圖示)作電性連接。金屬凸塊B之素材,係身為焊錫等之導電性金屬。金屬凸塊B,係被設置在配線基板11之下面。金屬凸塊B,係被與配線層L3作連接。
接著,針對配線基板11之內部構成進行說明。配線基板11,係具有配線111、和樹脂層112、113。
配線111,係將配線基板11之上面之電極墊片(墊片114、115)與配線基板11之下面之金屬凸塊B作電性連接。配線111之素材,例如,係身為銅或鎢等之導電性金屬。配線111,係包含被作了層積的複數之配線層L1、L2、L3。複數之配線層L1、L2、L3之間,係藉由樹脂層113而被絕緣。又,複數之配線層L1、L2、L3,例如,係亦可藉由通孔而在一部分處被作電性連接。墊片114、115,例如係身為配線層L1之一部分。
樹脂層112,例如,係身為阻焊劑等之絕緣材料。樹脂層113,例如係為預浸料(prepreg)。樹脂層113,例如,係身為玻璃絲網(glass cross)等之纖維狀補強材料與環氧樹脂等之熱硬化性樹脂的複合材料。樹脂層113,係相較於樹脂層112而強度以及剛性為更高。
接著,針對半導體晶片群CH1之內部構成進行說明。例如,如同第1圖中所示一般,半導體晶片群CH1,係包含複數之半導體晶片CH11、CH12、CH13。
複數之半導體晶片CH11、CH12、CH13,例如係為記憶體晶片。複數之半導體晶片CH11、CH12、CH13,例如係為NAND晶片。複數之半導體晶片CH11、CH12、CH13,例如係為同一之構造。半導體晶片CH11,係經由接著層31而被接著於配線基板11上。半導體晶片CH12,係經由接著層32而被接著於半導體晶片CH11上。半導體晶片CH13,係經由接著層33而被接著於半導體晶片CH12上。複數之半導體晶片CH11、CH12、CH13,例如係包含半導體元件。所謂半導體元件,例如,係身為記憶體胞陣列或CMOS電路(互補式金屬氧化物半導體電路,Complementary Metal-Oxide-Semiconductor circuit)。
第2圖,係為對於第1實施形態之半導體記憶裝置之構成的其中一例作展示之半導體記憶裝置1之擴大剖面圖。第2圖,係為第1圖之點線框D之擴大圖。另外,在第2圖中,係將樹脂23省略。
半導體晶片CH11,係具有面F1與面F2以及墊片P11。面F1,係身為配線基板11側之面。面F2,係身為面F1之相反側之面。墊片P11,係身為半導體晶片CH11之配線之一部分。墊片P11,係被設置在面F2上。半導體晶片CH11,係在面F1側處,經由接著層31而被與配線基板11相接著。半導體晶片CH11,係身為最下層之晶片。
半導體晶片CH12,係具有面F3與面F4與墊片P12以及半導體基板。面F3,係身為配線基板11側之面。面F4,係身為面F3之相反側之面。墊片P12,係身為半導體晶片CH12之配線之一部分。墊片P12,係被設置在面F4上。又,在第2圖所示之例中,墊片P12,係以從面F4之上方作觀察時墊片P12之一部分會與墊片P11相互重疊的方式而被作配置。半導體基板,例如係為矽基板。在半導體基板上,係被設置有半導體元件。半導體基板,係被配置在半導體晶片CH12之面F3側處。又,半導體晶片CH12,係在面F3側處,經由接著層32而被與半導體晶片CH11之面F2相接著。又,半導體晶片CH12,係以在從上方作觀察時會與墊片P11之至少一部分相互重疊的方式而被與半導體晶片CH11相接著。半導體晶片CH12,係以從上方作觀察時中心位置會與半導體晶片CH11之中心位置略一致的方式而被作配置。半導體晶片CH12,係被配置在半導體晶片CH11之正上方。
半導體晶片CH13,係具有面F5與面F6以及墊片P13。面F5,係身為配線基板11側之面。面F6,係身為面F5之相反側之面。墊片P13,係身為半導體晶片CH13之配線之一部分。墊片P13,係被設置在面F6上。又,半導體晶片CH13,係在面F5側處,經由接著層33而被與半導體晶片CH12之面F4相接著。又,半導體晶片CH13,係以在從上方作觀察時會與墊片P12之至少一部分相互重疊的方式而被與半導體晶片CH12相接著。半導體晶片CH13,係以從上方作觀察時中心位置會與半導體晶片CH12之中心位置略一致的方式而被作配置。半導體晶片CH13,係被配置在半導體晶片CH12之正上方。
如此這般,在半導體晶片CH12之上方,係被層積有與半導體晶片CH12同一構成之半導體晶片CH13。另外,在半導體晶片被作4層以上之層積的情況時,在半導體晶片CH13之上方,係亦可被反覆層積有與半導體晶片CH12同一構成之半導體晶片。
接著,針對打線群W1之內部構成進行說明。如同第2圖中所示一般,打線群W1,係包含有打線W11、W12、W13。打線W11,係將被設置於半導體晶片CH11處之墊片P11以及被設置於配線基板11處之墊片114作電性連接。同樣地,打線W12,係將被設置於半導體晶片CH12處之墊片P12以及墊片114作電性連接。打線W13,係將被設置於半導體晶片CH13處之墊片P13以及墊片114作電性連接。
打線W11,例如,係以從墊片P11起朝向上方立起的方式而被作設置。又,打線W11,係以形成頂點的方式而朝向下方延伸。朝向下方延伸之打線W11,係與第1圖中所示之配線基板11之墊片114相連接。如此這般,半導體晶片CH11之墊片P11,係被與從配線基板11而延伸之打線W11作電性連接。
接下來,針對切缺部C進行說明。
半導體晶片CH12,係在面F3之外周部處,具有切缺部C。所謂面F3之外周部,係指位於面F3與面F4之間之側面FS與面F3所相交叉之角部。切缺部C,係亦身為被設置在半導體晶片CH12之側面FS之下部處的凹部。切缺部C,係以與墊片P11相對向的方式而被作設置。
又,更詳細而言,切缺部C,係以使打線W11與半導體晶片CH12之切缺面CF相分離的方式而被作設置。所謂切缺面CF,係身為藉由形成切缺部C一事而露出的半導體晶片CH12之面。切缺面CF,係位置於打線W11中之以形成頂點的方式而作了彎曲的部分之旁邊。藉由切缺部C,係能夠將打線W11設為不會與半導體晶片CH12相接觸。藉由此,係能夠對起因於接觸所導致的打線W11與半導體晶片CH12之損傷作抑制。其結果,係能夠對於半導體記憶裝置1之信賴性的降低作抑制。
又,更詳細而言,切缺部C,係從面F3之中心部側起一直涵蓋至外周部側地而以使切缺深度CD會逐漸變大的方式而被作設置。所謂切缺深度CD,係身為相對於面F3之切缺部C之深度。在第2圖所示之例中,切缺部C,係以相對於切缺面CF之面F3的傾斜角會成為略一定的方式而被作設置。亦即是,切缺面CF,係身為傾斜角為略一定的平面。
又,切缺部C,係被設置在半導體晶片CH12之半導體基板處。切缺部C,係被設置在半導體晶片CH12內之較半導體元件所被作設置的區域而更下方處。代表半導體晶片CH12之中之最薄之部分的厚度之距離L,較理想,係為半導體元件之厚度以上。在距離L處,係亦可因應於需要而追加有餘裕量(margin)。此係為了對於可能會起因於切缺部C之形成而發生的對於半導體元件所造成之損傷作抑制之故。其結果,係能夠使半導體晶片CH12之動作之信賴性提升。半導體元件之厚度,例如係為約10μm。
又,在某一半導體晶片內,較理想,係於切缺部之略正上方處被設置有墊片。在第2圖所示之例中,墊片P12,係以從面F4之上方作觀察時墊片P12之一部分會與切缺部C相互重疊的方式而被作配置。在墊片P12之周邊,例如係被設置有保護元件等。
又,例如,在半導體晶片CH13處,係亦被設置有切缺部。半導體晶片CH13之切缺部之配置以及形狀等,例如,係與半導體晶片CH12之切缺部C相同。
又,例如,在最下層之半導體晶片CH11處,係並不設置切缺部。藉由此,從對於半導體元件之損傷的觀點來看,係能夠對於半導體晶片CH11之動作之信賴性的降低作抑制。
又,例如,係亦可在被包含於半導體晶片群CH1中之所有的半導體晶片處設置切缺部。故而,係可對於所有的半導體晶片而適用相同之製造製程。其結果,係能夠使半導體記憶裝置1之製造效率提升。
切缺部C,較理想,係在墊片P11之周邊處,以能夠得到約25μm之高度之空間的方式而被作設置。打線W11之直徑,例如,係為約15μm。從墊片P11起直到打線W11之頂點為止的高度,亦即是迴圈之高度,例如,係為約10μm。故而,打線W11之直徑與迴圈之高度之間之和,係為約25μm。又,切缺部C,較理想,係以使切缺深度CD成為約15μm程度的方式而被作設置。接著層32之厚度,例如,係為約10μm。從上述之空間而減去了接著層32之厚度後的高度,係為約15μm。另外,上述之數值係僅為其中一例,亦可因應於半導體晶片CH12、接著層32、墊片P11以及打線W11之尺寸以及形狀等而被作變更。
接著,對於在配線基板11上的半導體晶片CH13以及墊片P13之配置作說明。
第3圖,係為對於第1實施形態之半導體記憶裝置1之構成之配置的其中一例作展示之半導體記憶裝置1之平面圖。第3圖,係為從上方而對於半導體晶片群CH1作了觀察之圖。另外,第3圖之A-A線,係代表與身為剖面圖之第1圖相對應的剖面。又,半導體晶片CH11、CH12、CH13係以相重疊的方式而被作設置。
又,如同第3圖中所示一般,墊片P13,係沿著半導體晶片CH13之邊CHs而被設置有複數個。邊CHs,係身為半導體晶片CH13之邊的其中一者。墊片P13,係從第3圖之紙面下方起,經由打線W13而被與配線基板11上之墊片114作電性連接。
接著,針對半導體記憶裝置1之製造方法作說明。
第4圖,係為對於第1實施形態之半導體晶圓W之個片化方法的其中一例作展示之剖面圖。第5圖,係為對於第1實施形態之半導體晶片CH12、CH13之加工方法的其中一例作展示之剖面圖。
首先,藉由切割刃DB來將半導體晶圓W切斷。藉由此,半導體晶圓W,例如係被個片化為半導體晶片CH12以及半導體晶片CH13。
接著,藉由加工用刃PB,來對於半導體晶片CH11、CH12之邊CHs進行加工。加工用刃PB,例如,係較切割刃DB而更厚,前端係成為錐狀。藉由此,係能夠將在半導體晶片CH12處的與接著層32之間之接觸面之外周部加工為錐狀。同樣地,係能夠將在半導體晶片CH13處的與接著層33之間之接觸面之外周部加工為錐狀。之後,將半導體晶片CH12、CH13安裝於半導體晶片CH11上。例如,係依序進行被作了個片化的半導體晶片CH12之設置、和打線W12之接合、和半導體晶片CH13之設置、以及打線W13之接合。如此這般,半導體晶片群CH1係被作層積。
另外,由加工用刃PB所致之加工,係亦可在由切割刃DB所致之半導體晶片CH12、CH13之個片化前而被進行。又,為了提升柔軟的接著層32、33之加工性,係亦可在第5圖中之接著層32、33上,例如於加工前而設置作為加工用之支撐板而起作用的假晶圓等。又,加工方法係並不被限定於上述之例。例如,係亦可使用能夠同時進行半導體晶片CH12、CH13之個片化以及加工的形狀之刃。又,係亦可藉由雷射來進行半導體晶片CH12、CH13之加工。
如同上述一般,若依據第1實施形態,則係能夠將複數之半導體晶片CH11、CH12、CH13並不發生偏移地而作層積。其結果,係能夠使在半導體記憶裝置1內的各構成之配置之自由度提升。又,係可在與層積方向相垂直之方向上,將複數之半導體晶片更進一步高積體化。
又,在半導體晶片CH12處,係被設置有切缺部C。藉由切缺部C,係能夠將半導體晶片CH11與半導體晶片CH12之間之空間擴廣。藉由此,係能夠將半導體晶片CH12相對於其他之半導體晶片CH11而並不發生偏移地作層積。
又,在第1實施形態中,於半導體晶片CH11、CH12、CH13之間係並未被設置有中介板以及間隔物等。在半導體晶片CH11、CH12之間以及半導體晶片CH12、CH13之間,係分別僅被設置有接著層32、33。藉由此,係可在層積方向上,將半導體晶片群CH1高積體化。
在第1實施形態中,係能夠將半導體晶片CH11、CH12、CH13並不發生偏移地而作配置。故而,係能夠從半導體晶片群CH1之單側來將打線群W1與半導體晶片群CH1作連接。藉由此,係能夠對於半導體晶片CH11、CH12、CH13與半導體晶片CH2之間之配線長度的參差作抑制。又,係能夠將半導體晶片CH11、CH12、CH13之電性特性更加均一化。
另外,半導體晶片群CH1,係並非絕對需要從半導體晶片群CH1之單側來將打線群W1作連接。例如,係亦可在層積之偶數段與奇數段處,將墊片群P1分別配置在相反側處。又,係亦可將墊片群P1設置在1個的半導體晶片之2個的邊處。就算是在此些的情況中,亦同樣的,係以不會使打線群W1與半導體晶片群CH1相接觸的方式,而被設置有切缺部。
作為將複數之半導體晶片並不發生偏移地而作層積的其他之方法,係周知有在複數之半導體晶片間而將中介板或間隔物等以不會與墊片相互重疊的方式來作設置之方法。但是,於此情況,起因於因應於層積數量而被作設置的中介板或間隔物等之厚度,係會成為難以高積體化。
第6圖,係為對於第1比較例之半導體記憶裝置1a之構成的其中一例作展示之半導體記憶裝置1a之剖面圖。
一般而言,為了構成為不會在被與打線群W1作連接之墊片群P1上而重疊有半導體晶片CH11、CH12、CH13,係周知有如同在第6圖中所示一般之將半導體晶片CH11、CH12、CH13作階梯狀的偏移層積之方法。但是,於此情況,若是層積數量越增加,則最下層之半導體晶片CH11與最上層之半導體晶片CH13之間的偏移量O係會越變大。起因於大的偏移量O,在與層積方向相垂直之方向上係會成為需要廣大的空間。故而,係會有導致在半導體記憶裝置1a內的各構成之配置之自由度降低的可能性。又,例如,依存於製品等,係亦會有要求在更小之框體中以高密度來配置半導體晶片的情況。於此情況,係無法確保為了偏移量O所需要的空間,而會有使製品設計變得困難的可能性。
第7圖,係為對於第2比較例之半導體記憶裝置1b之構成的其中一例作展示之半導體記憶裝置1b之剖面圖。
作為對於在第1比較例中所作了說明的偏移量O變大的情形作抑制之方法,係周知有如同第7圖中所示一般之從層積之途中起來將半導體晶片CH14、CH15、CH16朝向與半導體晶片CH11、CH12、CH13之偏移方向相反之方向而作偏移並進行層積之方法。另外,半導體晶片CH14、CH15、CH16,係被包含於半導體晶片群CH1中。但是,於此情況,例如,係有必要將半導體晶片CH14、CH15、CH16之墊片P14、P15、P16的位置設為與半導體晶片CH11、CH12、CH13之墊片P11、P12、P13相反側的位置。另外,墊片P14、P15、P16,係被包含於墊片群P1中。故而,在第7圖所示之例中,係從半導體晶片群CH1之左右而進行有打線群W1之接合。於此情況,半導體晶片CH11、CH12、CH13與半導體晶片CH2之間之配線長度,係會成為較半導體晶片CH14、CH15、CH16與半導體晶片CH2之間之配線長度而更大。另外,實際所被作層積之半導體晶片CH11~CH16,例如,其層積方向之厚度係為100μm以下。另一方面,半導體晶片CH11~CH16之寬幅,例如係為數mm。亦即是,配線長度,係相較於打線群W1之高度方向之距離而更會受到配線111之距離的影響。故而,在各半導體晶片CH11~CH16之每一者處的半導體晶片CH11~CH16與半導體晶片CH2之間之配線長度的參差係會變大。其結果,係會有導致在各半導體晶片CH11~CH16之每一者處的電性特性之參差變大的可能性。
又,作為切缺面CF之形狀,例如,係亦可考慮彎曲為L字之形狀。亦即是,在側面FS與面F3相交叉之角部處,係被矩形狀地形成有切缺。但是,L字之角係會有成為應力之反曲點的可能性。例如,在與L字之角相對應的位置處,係會有半導體晶片CH12變得容易彎折的情況。
實施形態,係僅為例示,發明之範圍係並不被該些實施形態所限定。
1:半導體記憶裝置
1a:半導體記憶裝置
1b:半導體記憶裝置
11:配線基板
111:配線
112:樹脂層
113:樹脂層
114:墊片
115:墊片
23:樹脂
30:接著層群
31:接著層
32:接著層
33:接著層
40:接著層
B:金屬凸塊
C:切缺部
CD:切缺深度
CF:切缺面
CH1:半導體晶片群
CH11~CH16:半導體晶片
CH2:半導體晶片
CHs:邊
D:點線框
DB:切割刃
F1~F6:面
FS:側面
L:距離
L1:配線層
L2:配線層
L3:配線層
O:偏移量
P1:墊片群
P11~P16:墊片
P2:墊片
PB:加工用刃
W:半導體晶圓
W1:打線群
W11:打線
W12:打線
W13:打線
[第1圖]係為對於第1實施形態之半導體記憶裝置之構成的其中一例作展示之半導體記憶裝置之剖面圖。
[第2圖]係為對於第1實施形態之半導體記憶裝置之構成的其中一例作展示之半導體記憶裝置之擴大剖面圖。
[第3圖]係為對於第1實施形態之半導體記憶裝置之構成的配置之其中一例作展示之半導體記憶裝置之平面圖。
[第4圖]係為對於第1實施形態之半導體晶圓之個片化方法的其中一例作展示之剖面圖。
[第5圖]係為對於第1實施形態之半導體晶片之加工方法的其中一例作展示之剖面圖。
[第6圖]係為對於第1比較例之半導體記憶裝置之構成的其中一例作展示之半導體記憶裝置之剖面圖。
[第7圖]係為對於第2比較例之半導體記憶裝置之構成的其中一例作展示之半導體記憶裝置之剖面圖。
1:半導體記憶裝置
11:配線基板
23:樹脂
30:接著層群
31:接著層
32:接著層
33:接著層
40:接著層
111:配線
112:樹脂層
113:樹脂層
114:墊片
115:墊片
B:金屬凸塊
C:切缺部
CH1:半導體晶片群
CH11~CH13:半導體晶片
CH2:半導體晶片
D:點線框
L1:配線層
L2:配線層
L3:配線層
P1:墊片群
P2:墊片
W1:打線群
W2:打線
Claims (8)
- 一種半導體記憶裝置,係具備有:基板;和第1半導體晶片;和第2半導體晶片,前述第1半導體晶片,係具有與前述基板相接之第1面、和前述第1面之相反側之第2面、以及被設置於前述第2面處之第1墊片,前述第2半導體晶片,係具有與前述第2面相接之第3面、和前述第3面之相反側之第4面、以及切缺部,前述切缺部,係以從前述第3面之中心部側起一直涵蓋至外周部側地而以使相對於前述第3面之切缺深度會逐漸變大的方式而被設置於側面與前述第3面所相交叉之角部處,前述側面,係位於前述第3面與前述第4面之間,前述切缺部,係從前述第4面之上方作觀察時會與前述第1墊片之至少一部分相互重疊。
- 如請求項1所記載之半導體記憶裝置,其中,前述第1半導體晶片之前述第1墊片,係被與從前述基板而延伸之打線作電性連接,前述打線,係於橫方向與前述第2半導體晶片之切缺面相分離地而被作設置。
- 如請求項1或2所記載之半導體記憶裝 置,其中,前述第2半導體晶片,係更進而具有:半導體基板,係被配置於前述第3面側處;和半導體元件,係被配置於前述第4面側處,並被設置於前述半導體基板上,前述切缺部,係被設置於前述半導體基板處。
- 如請求項3所記載之半導體記憶裝置,其中,前述切缺部,係從前述半導體元件相互分離地而被作設置。
- 如請求項1或2所記載之半導體記憶裝置,其中,前述第2半導體晶片,係於前述第4面處具有第2墊片,前述第2墊片,係以從前述第4面之上方作觀察時至少一部分會與前述切缺部相互重疊的方式而被作配置。
- 如請求項1或2所記載之半導體記憶裝置,其中,前述第2半導體晶片,係於前述第4面處具有第2墊片,前述第2墊片,係以從前述第4面之上方作觀察時至少一部分會與前述第1墊片相互重疊的方式而被作配置。
- 如請求項1或2所記載之半導體記憶裝置,其中, 前述第2半導體晶片,係以從前述第4面之上方作觀察時中心位置會與前述第1半導體晶片之中心位置相互一致的方式而被作配置。
- 如請求項1或2所記載之半導體記憶裝置,其中,前述第2半導體晶片之前述第3面,係經由接著層而被與前述第1半導體晶片之前述第2面相互接著。
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TW201608672A (zh) * | 2014-06-16 | 2016-03-01 | 英特爾股份有限公司 | 金屬互連的接縫癒合 |
US20160181214A1 (en) * | 2014-12-22 | 2016-06-23 | Ki-Seok OH | Stacked memory chip having reduced input-output load, memory module and memory system including the same |
US20160329303A1 (en) * | 2015-05-06 | 2016-11-10 | Micron Technology, Inc. | Semiconductor device packages including a controller element and related methods |
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US9087846B2 (en) * | 2013-03-13 | 2015-07-21 | Apple Inc. | Systems and methods for high-speed, low-profile memory packages and pinout designs |
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EP2308087B1 (en) * | 2008-06-16 | 2020-08-12 | Tessera, Inc. | Stacking of wafer-level chip scale packages having edge contacts |
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US20160181214A1 (en) * | 2014-12-22 | 2016-06-23 | Ki-Seok OH | Stacked memory chip having reduced input-output load, memory module and memory system including the same |
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