TWI777097B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI777097B
TWI777097B TW108138443A TW108138443A TWI777097B TW I777097 B TWI777097 B TW I777097B TW 108138443 A TW108138443 A TW 108138443A TW 108138443 A TW108138443 A TW 108138443A TW I777097 B TWI777097 B TW I777097B
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TW
Taiwan
Prior art keywords
liquid
processing
treatment
substrate
phosphoric acid
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TW108138443A
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English (en)
Chinese (zh)
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TW202027157A (zh
Inventor
松井浩彬
杉岡真治
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日商斯庫林集團股份有限公司
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Publication of TW202027157A publication Critical patent/TW202027157A/zh
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Publication of TWI777097B publication Critical patent/TWI777097B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
TW108138443A 2018-11-16 2019-10-24 基板處理裝置及基板處理方法 TWI777097B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-215146 2018-11-16
JP2018215146A JP7126927B2 (ja) 2018-11-16 2018-11-16 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
TW202027157A TW202027157A (zh) 2020-07-16
TWI777097B true TWI777097B (zh) 2022-09-11

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TW108138443A TWI777097B (zh) 2018-11-16 2019-10-24 基板處理裝置及基板處理方法
TW111129447A TWI810008B (zh) 2018-11-16 2019-10-24 基板處理裝置

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TW111129447A TWI810008B (zh) 2018-11-16 2019-10-24 基板處理裝置

Country Status (3)

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JP (1) JP7126927B2 (ja)
TW (2) TWI777097B (ja)
WO (1) WO2020100558A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023045047A (ja) * 2021-09-21 2023-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200929351A (en) * 2007-08-20 2009-07-01 Chemical Art Technology Inc Device and method for regenerating etching liquid
US7896970B2 (en) * 2004-08-10 2011-03-01 Kabushiki Kaisha Toshiba Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
CN1892216B (zh) * 2005-05-17 2012-06-20 爱普睿思科技株式会社 磷酸溶液中的硅浓度测定装置和测定方法
US20150047677A1 (en) * 2012-03-23 2015-02-19 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and heater cleaning method
TWI547989B (zh) * 2013-02-15 2016-09-01 斯克林集團公司 基板處理裝置
JP2017216478A (ja) * 2013-09-30 2017-12-07 芝浦メカトロニクス株式会社 基板処理装置
TW201822902A (zh) * 2016-09-26 2018-07-01 日商斯庫林集團股份有限公司 基板處理方法
TWI636018B (zh) * 2015-12-18 2018-09-21 水生活資源(海洋)私人有限公司 晶圓或pcb製程廢液之硫酸銅回收方法與具有廢液硫酸銅回收單元之晶圓或pcb製造系統

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050682A (ja) * 1996-08-01 1998-02-20 Seiko Epson Corp 半導体装置の製造方法及び製造装置及び半導体装置
US7851373B2 (en) * 2006-11-09 2010-12-14 Infineon Technologies Ag Processing systems and methods for semiconductor devices
JP2009130032A (ja) 2007-11-21 2009-06-11 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5931484B2 (ja) 2012-02-13 2016-06-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6087063B2 (ja) 2012-05-01 2017-03-01 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP6180891B2 (ja) 2013-11-12 2017-08-16 株式会社旭製作所 Ｓｉ含有リン酸系廃液からＳｉを除去又は低減する方法
JP6472726B2 (ja) * 2015-07-22 2019-02-20 東京エレクトロン株式会社 基板液処理装置、基板液処理方法及び記憶媒体

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7896970B2 (en) * 2004-08-10 2011-03-01 Kabushiki Kaisha Toshiba Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
CN1892216B (zh) * 2005-05-17 2012-06-20 爱普睿思科技株式会社 磷酸溶液中的硅浓度测定装置和测定方法
TW200929351A (en) * 2007-08-20 2009-07-01 Chemical Art Technology Inc Device and method for regenerating etching liquid
US20150047677A1 (en) * 2012-03-23 2015-02-19 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and heater cleaning method
TWI547989B (zh) * 2013-02-15 2016-09-01 斯克林集團公司 基板處理裝置
JP2017216478A (ja) * 2013-09-30 2017-12-07 芝浦メカトロニクス株式会社 基板処理装置
TWI636018B (zh) * 2015-12-18 2018-09-21 水生活資源(海洋)私人有限公司 晶圓或pcb製程廢液之硫酸銅回收方法與具有廢液硫酸銅回收單元之晶圓或pcb製造系統
TW201822902A (zh) * 2016-09-26 2018-07-01 日商斯庫林集團股份有限公司 基板處理方法

Also Published As

Publication number Publication date
TW202249114A (zh) 2022-12-16
TWI810008B (zh) 2023-07-21
TW202027157A (zh) 2020-07-16
WO2020100558A1 (ja) 2020-05-22
JP2020087985A (ja) 2020-06-04
JP7126927B2 (ja) 2022-08-29

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