TWI777097B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

An object of the present invention is to provide a substrate processing technique in which crystallization of components eluted from the substrate in the processing liquid is difficult to occur in the path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.

The substrate processing apparatus of the present invention includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishment unit, and a control unit. The processing unit performs etching processing on the substrate with the processing liquid. The liquid supply part has a liquid supply pipe part for supplying the processing liquid to the processing part. The liquid discharge part has a liquid discharge pipe part for discharging the first processing liquid, which has been used in the etching process on the substrate in the processing part, from the processing part to the outside of the substrate processing apparatus. The liquid replenishing portion has a connected solution for supplying a second treatment liquid having a lower dissolved concentration of components constituting the substrate than the first treatment liquid to the liquid discharge portion, thereby mixing the first treatment liquid and the second treatment liquid to generate a mixed solution. The liquid replenishment pipe part in the liquid discharge part. The control unit controls the supply of the treatment liquid to the treatment section by the liquid supply section and the replenishment of the second treatment liquid to the liquid discharge section by the liquid replenishment section.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for organic EL (Electroluminescence), substrates for FED (Field Emission Display), light Technology for etching substrates such as display substrates, magnetic disk substrates, opto-magnetic disk substrates, photomask substrates, and solar cell substrates.

There is known a substrate processing apparatus (for example, Patent Document 1, etc.) that performs an etching process on a substrate by immersing the substrate in a processing liquid stored in a processing tank. Here, for example, a treatment (etching treatment) in which the silicon nitride film formed on the surface of the substrate is eluted with a treatment liquid such as an aqueous solution of phosphoric acid (H ₃ PO ₄ ) (aqueous phosphoric acid) is performed. In this apparatus, for example, a circulation line including a pump, a heater, and a filter for circulating the treatment liquid with respect to the treatment tank is provided. Moreover, when the etching process of the board|substrate using a process liquid is performed in a process tank, the density|concentration of the eluted component eluted from the board|substrate in the process liquid stored in the process tank will increase. Furthermore, for example, the processing liquid with a high concentration of eluted components can be discharged out of the substrate processing apparatus through a waste line.

[Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2018-6623

However, in the substrate processing apparatus described in Patent Document 1 and the like, for example, a processing liquid used for etching processing is sent from a processing tank to a cooling box, and after being cooled by the cooling box, it is removed by a waste line. It is discharged out of the substrate processing apparatus. In this case, for example, in the discarding line, the eluted component of the substrate in the treatment liquid may crystallize and the discarding line may be clogged.

For example, when an etching process is performed on a silicon nitride film formed on the surface of a substrate with a treatment liquid such as an aqueous phosphoric acid solution, the amount of silicon eluted from the substrate depends on the number of substrates to be processed and the size of the etching process. As time passes, it gradually accumulates in the phosphoric acid aqueous solution. Then, the concentration of silicon in the phosphoric acid aqueous solution (also called the concentration of siloxane (SiO ₂ component)) becomes high. Here, for example, when the phosphoric acid aqueous solution is sent from the treatment tank to the cooling box, and after being cooled by the cooling box, it is discharged to the outside of the substrate processing apparatus through the waste line, and it exists in the waste line. , the siloxane in the phosphoric acid aqueous solution will crystallize and cause the possibility of clogging the waste line.

If such a problem of clogging of the waste line occurs, for example, the substrate processing apparatus cannot be used until the clogging of the waste line is resolved.

Such a problem is not limited to the so-called batch type substrate processing apparatus which performs etching processing on the substrate by immersing the substrate in the processing liquid stored in the processing tank. A substrate processing apparatus such as a so-called single-wafer substrate processing apparatus that discharges a processing liquid from a substrate and performs etching processing using the processing liquid on a substrate.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing technology in which crystallization of the eluted components from the substrate in the processing liquid is difficult to occur in the path of discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.

In order to solve the above-mentioned problems, the substrate processing apparatus according to the first aspect includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishment unit, and a control unit. The said processing part performs the etching process with respect to a board|substrate with a processing liquid. The said liquid supply part has the liquid supply pipe part which supplies the said process liquid to the said process part. The liquid discharge part has a liquid discharge pipe part for discharging the first processing liquid after the etching process on the substrate in the processing part from the processing part to the outside of the substrate processing apparatus. The liquid replenishing portion is configured to supply a second treatment liquid having a lower dissolved concentration of components constituting the substrate than the first treatment liquid to the liquid discharge portion, thereby mixing the first treatment liquid and the second treatment liquid to generate a mixture solution, and has a liquid replenishing pipe part connected to the above-mentioned liquid discharge part. The control unit controls the supply of the treatment liquid to the treatment unit by the liquid supply unit and the replenishment of the second treatment liquid to the liquid discharge unit by the liquid replenishment unit.

The substrate processing apparatus according to the second aspect is the substrate processing apparatus according to the first aspect, wherein the liquid replenishing unit mixes the second processing liquid with the first processing liquid so that the mixed solution constitutes the substrate of the substrate. The dissolved concentrations of the ingredients did not reach solubility.

The substrate processing apparatus according to the third aspect is the substrate processing apparatus according to the first or second aspect, wherein the processing liquid includes an aqueous phosphoric acid solution, the substrate has a film of silicon nitride, and the etching treatment includes applying the phosphoric acid aqueous solution. The process of dissolving the above-mentioned silicon nitride film.

The substrate processing apparatus of a fourth aspect is the substrate processing apparatus of any one of the first to third aspects, wherein the liquid supply unit supplies the second processing liquid to the processing unit.

The substrate processing apparatus of a fifth aspect is the substrate processing apparatus of any one of the first to fourth aspects, wherein the processing section discharges the first processing liquid in response to the supply of the processing liquid from the liquid supply section In the liquid discharge unit, when the processing unit performs the etching processing on the substrate, the control unit supplies the processing liquid by the liquid supply unit to the processing unit twice or more, and causes the processing unit to The replenishment of the second treatment liquid by the liquid replenishing unit two or more times toward the liquid discharge unit is performed in synchronization.

The substrate processing apparatus of a sixth aspect is the substrate processing apparatus of any one of the first to fifth aspects, wherein the processing section discharges the first processing liquid in response to the supply of the processing liquid from the liquid supply section In the liquid discharge part, the control part executes the replenishment of the second processing liquid by the liquid replenishing part to the liquid discharge part at least once before the etching process on the substrate is performed by the processing part, When the etching process is performed on the substrate by the processing unit, the processing liquid by the liquid supply unit is supplied to the processing unit, and the second processing liquid by the liquid replenishing unit is directed to the processing unit. The replenishment of the liquid discharge part is performed.

The substrate processing apparatus of a seventh aspect is the substrate processing apparatus of any one of the first to sixth aspects, wherein the control section is performed after the etching process on the substrate by the processing section is performed and until the next During the period until the etching process on the substrate performed by the processing unit is performed, at a predetermined time point, the liquid replenishing unit causes the second processing liquid to be replenished to the liquid discharge unit.

The substrate processing apparatus of an eighth aspect is the substrate processing apparatus of any one of the first to seventh aspects, wherein the liquid discharge portion further includes a cooling box for cooling the first processing liquid, and the liquid discharge pipe portion It includes a first part that connects the processing unit and the cooling box, and a second part that is connected to the cooling box and discharges the liquid to the outside of the substrate processing apparatus.

The substrate processing apparatus of the ninth aspect is the substrate processing apparatus of the eighth aspect, wherein the liquid discharge unit further includes a detection unit that detects the storage amount of the liquid stored in the cooling box, and the processing unit is based on a source from the cooling box. The supply of the treatment liquid by the liquid supply unit discharges the first treatment liquid to the liquid discharge section, and the control section prohibits the treatment when the detection section detects that the storage amount reaches a first threshold value The execution of the above-mentioned etching process on the above-mentioned substrate performed by the section.

The substrate processing apparatus of the tenth aspect is the substrate processing apparatus of the seventh aspect, wherein the above The liquid discharge portion further includes a cooling tank for cooling the first treatment liquid, the liquid discharge pipe portion includes a first portion that connects the treatment portion and the cooling tank, and is connected to the cooling tank for cooling the liquid. The second part that discharges the liquid to the outside of the substrate processing apparatus, the liquid discharge part further includes a detection part for detecting the storage amount of the liquid stored in the cooling tank; When the storage amount reaches the second threshold value, the execution of the replenishment of the second treatment liquid to the liquid discharge section by the liquid replenishing section at the predetermined time point is prohibited.

The substrate processing method of the eleventh aspect is a substrate processing method of a substrate processing apparatus, which includes an etching step, a liquid supply step, a liquid discharge step, and a liquid replenishment step. In the above-mentioned etching step, the substrate is etched with the treatment liquid in the treatment section. In the above-mentioned liquid supply step, the above-mentioned processing liquid is supplied to the above-mentioned processing part through a liquid supply pipe part. In the above-mentioned liquid discharge step, the first processing liquid used in the above-mentioned etching step is discharged from the above-mentioned processing part to the outside of the above-mentioned substrate processing apparatus through a liquid discharge part including a liquid discharge pipe part. In the liquid replenishing step, the first treatment liquid and the above-mentioned first treatment liquid are mixed by replenishing the second treatment liquid whose dissolved concentration of the components constituting the above-mentioned substrate is lower than that of the above-mentioned first treatment liquid to the above-mentioned liquid discharge portion through the liquid replenishing pipe portion. The second treatment liquid produces a mixed solution.

The substrate processing method of a twelfth aspect is the substrate processing method of the eleventh aspect, wherein in the liquid replenishing step, the second processing liquid is mixed with the first processing liquid to form the mixed solution. The dissolved concentration of the components of the above-mentioned substrate did not reach the solubility.

The substrate processing method of a thirteenth aspect is the substrate processing method of the eleventh or twelfth aspect, wherein the processing solution includes an aqueous phosphoric acid solution, the substrate has a silicon nitride film, and the substrate has a silicon nitride film on the substrate. In the etching step, the above-mentioned silicon nitride film is dissolved by the above-mentioned phosphoric acid aqueous solution.

The substrate processing method of a fourteenth aspect is the substrate processing method of any one of the eleventh to thirteenth aspects, wherein, in the liquid supply step, the second processing liquid is supplied to the processing section through the liquid supply pipe section.

The substrate processing method of a fifteenth aspect is the substrate processing method of any one of the eleventh to fourteenth aspects, wherein, in the liquid discharge step, the processing unit disposes the processing liquid according to the supply of the processing liquid in the liquid supply step. The first treatment liquid is discharged to the liquid discharge portion, and when the etching treatment is performed in the etching step, the treatment liquid passed through the liquid supply pipe portion in the liquid supply step is supplied to the treatment portion twice or more, In the above-mentioned liquid replenishing step, two or more replenishments of the second treatment liquid to the liquid discharge portion via the liquid replenishing pipe portion are performed synchronously.

The substrate processing method of a sixteenth aspect is the substrate processing method of any one of the eleventh to fifteenth aspects, wherein, in the liquid discharge step, the processing liquid passed through the liquid supply pipe portion in the liquid supply step is adapted to The supply to the processing unit is to discharge the first processing liquid from the processing unit to the liquid discharge unit, and before the etching treatment in the etching step, the liquid replenishing step is performed at least once through the liquid replenishing pipe section. The replenishment of the second treatment liquid to the liquid discharge unit is performed when the etching treatment is performed in the etching step, and the treatment liquid is supplied to the treatment unit via the liquid supply pipe section in the liquid supply step, and is executed. In the liquid replenishment step, the second treatment liquid is replenished toward the liquid discharge portion via the liquid replenishment pipe portion.

The substrate processing method of a seventeenth aspect is the substrate processing method of any one of the eleventh to sixteenth aspects, wherein the etching process is performed after the etching process is performed in the etching step and up to the next etching step. During the period until the execution, replenishment of the second treatment liquid to the liquid discharge part via the liquid replenishing pipe part in the liquid replenishing step is executed at a predetermined time.

The substrate processing method of an eighteenth aspect is the substrate processing method of any one of the eleventh to seventeenth aspects, wherein the liquid discharging step includes discharging the first processing liquid from the processing portion to the liquid discharging pipe portion Included in the first liquid discharge step of the first part, the liquid cooling step of cooling the first treatment liquid or the mixed solution in a cooling tank included in the liquid discharge part and connected to the first part, and a second liquid discharge step of discharging the mixed solution from the cooling tank to the outside of the substrate processing apparatus via a second portion included in the liquid discharge pipe portion and connected to the cooling tank.

The substrate processing method of the nineteenth aspect is the substrate processing method of the eighteenth aspect, further comprising a detection step of detecting the storage amount of the liquid stored in the cooling box, and in the liquid discharge step, in response to In the liquid supply step, the treatment liquid is supplied to the treatment section through the liquid supply pipe section, and the first treatment liquid is discharged from the treatment section to the liquid discharge section. When the storage amount reaches the first threshold value, the execution of the above-mentioned etching process in the above-mentioned etching step is prohibited.

The substrate processing method of the twentieth aspect is the substrate processing method of the seventeenth aspect, wherein, The liquid discharge step includes: a first liquid discharge step of discharging the first treatment liquid from the treatment part to a first part included in the liquid discharge pipe part; being contained in the liquid discharge part and connected to the The liquid cooling step of cooling the first treatment liquid or the mixed solution in the cooling tank of the first part, and the cooling tank through the second part included in the liquid discharge pipe part and connected to the cooling tank from the cooling tank In the second liquid discharge step of discharging the mixed solution to the outside of the substrate processing apparatus, the substrate processing method further includes a detection step of detecting the storage amount of the liquid stored in the cooling box. When it is detected that the storage amount has reached the second threshold value, the replenishment of the second treatment liquid to the liquid discharge part via the liquid replenishing pipe part at the predetermined timing in the liquid replenishing step is prohibited.

According to either of the substrate processing apparatus of the first aspect and the substrate processing method of the eleventh aspect, for example, when the first processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus, the components constituting the substrate can be dissolved. The second treatment liquid having a relatively low concentration is mixed with the first treatment liquid and discharged. Thereby, crystallization of the eluted component from the substrate in the processing liquid is less likely to occur, for example, in the path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.

According to any one of the substrate processing apparatus of the second aspect and the substrate processing method of the twelfth aspect, for example, the components constituting the substrate are dissolved in the mixed solution produced by mixing the second processing liquid with the first processing liquid. When the concentration does not reach the solubility, crystallization of the eluted components from the substrate in the processing liquid hardly occurs in the route of discharging the processing liquid from the processing unit to the outside of the substrate processing apparatus.

Regardless of the substrate processing apparatus of the third aspect and the substrate processing method of the thirteenth aspect, for example, when the first phosphoric acid aqueous solution is discharged from the processing unit to the outside of the substrate processing apparatus, the dissolved concentration of silicon can be relatively The lower second phosphoric acid aqueous solution is mixed with the first phosphoric acid aqueous solution and discharged. Thereby, crystallization of the siloxane hardly occurs in, for example, the route of discharging the phosphoric acid aqueous solution from the processing section to the outside of the substrate processing apparatus.

Regardless of any one of the substrate processing apparatus of the fourth aspect and the substrate processing method of the fourteenth aspect, for example, the second processing liquid used for supplying the processing section may also be used for mixing with the first processing in the liquid discharge section. liquid use. Thereby, for example, a configuration can be achieved between the liquid supply portion for supplying the second treatment liquid to the treatment portion, and the liquid replenishing portion for replenishing the second treatment liquid mixed with the first treatment liquid in the liquid discharge portion common use of at least a part of it. As a result, for example, the configuration of the substrate processing apparatus can be simplified.

Regardless of any one of the substrate processing apparatus of the fifth aspect and the substrate processing method of the fifteenth aspect, for example, when the substrate is etched by the processing unit, the processing liquid may be directed toward the processing unit twice or more. In synchronization with the supply, the first treatment liquid is discharged from the treatment portion to the liquid discharge portion twice or more, and the second treatment liquid is replenished to the liquid discharge portion twice or more. Thereby, for example, the dissolved concentration of the components constituting the substrate in the mixed solution generated by the liquid discharge portion can be easily uniformized. As a result, for example, crystallization of components eluted from the substrate in the processing liquid is less likely to occur in the path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.

Regardless of any one of the substrate processing apparatus of the sixth aspect and the substrate processing method of the sixteenth aspect, for example, before performing the etching process, the second processing liquid is directed to the liquid at least once The supply of the body discharge part enables the first processing liquid discharged from the processing part and the second processing liquid from the liquid replenishing part to be easily mixed during the etching process. Thereby, for example, crystallization of the eluted components from the substrate in the processing liquid is less likely to occur in the path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.

Regardless of any one of the substrate processing apparatus of the seventh aspect and the substrate processing method of the seventeenth aspect, for example, the etching process is not performed during the two or more etching processes performed on the substrate by the processing unit. During the interval, the second treatment liquid is replenished to the liquid discharge part at a predetermined time. Thereby, crystallization of the eluted component from the substrate in the processing liquid is less likely to occur, for example, in the path for discharging the processing liquid from the processing section toward the outside of the substrate processing apparatus.

Regardless of any one of the substrate processing apparatus of the eighteenth aspect and the substrate processing method of the eighteenth aspect, for example, even if the first processing liquid is cooled in the cooling box, the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus. In the process, the crystallization of the eluted components from the substrate in the processing liquid will hardly occur.

Regardless of any one of the substrate processing apparatus of the ninth aspect and the substrate processing method of the nineteenth aspect, for example, if a liquid exceeding the first threshold value is stored in the cooling box, the processing unit does not perform a single operation. Etching treatment of a substrate in which the first treatment liquid is discharged while supplying the treatment liquid. Thereby, when performing an etching process with respect to a board|substrate, it can suppress the occurrence of the malfunction which arises by performing an etching process which cannot discharge a 1st process liquid from a process part to a liquid discharge part, for example.

Regardless of the substrate processing apparatus according to the tenth aspect and the substrate processing method of the twentieth aspect For example, if the cooling box contains a liquid above the second threshold value, the second process will not be performed at a predetermined time during the interval when the etching process by the processing unit is not performed. The liquid is replenished towards the liquid discharge part. Thereby, for example, when performing an etching process on a board|substrate after an interval period, it can suppress the occurrence of inconvenience caused by the etching process which cannot discharge a 1st process liquid from a process part to a liquid discharge part.

1: Input Department

2: 1st conveying section

3: The second conveying section

4: Drying section

5: 1st Liquid Handling Section

6: 2nd Liquid Handling Section

7: Delivery Department

8: Input part

9: Output part

10: Control Department

10a: Operation Department

10b: Memory

10c: Storage Department

10d: Timer

11: Mounting table

30: Keeping Department

30f: top surface

40: Rotary Mechanism

40m: Rotary drive part

40s: Rotation Pivot

50: Nozzle

51: Cleaning and processing department

52, 52B: Liquid treatment department

52s: Sensor part

53: Sub-conveyor department

71: Mounting table

100: Substrate processing device

AL1, AL1B: Liquid replenishment department

Ax1: Rotation axis

B1a: 1st inner groove

B1b: 1st outer groove

B2a: 2nd inner groove

B2b: 2nd outer groove

Bs1: lower surface

C1: Cartridge

CB1: Adjustment slot

CB2: liquid treatment tank

Cf1: 1st flow control section

Cf2: 2nd flow control section

Cf3: 3rd flow control section

CL1: The first liquid circulation section

CL2: Second Liquid Circulation Section

CP2: Chemical liquid processing unit

Ct1: Cooling box

EL1, EL1A, EL1B: Liquid discharge part

En0: Treatment liquid supply source

Ex0: Treatment liquid output part

Fl1: Filter

Fr0, Fr1: flow

Ht1: 1st heater

Ht2: 2nd heater

LF2: Lift

Lv1~Lv4: 1st~4th storage amount

M1: 1st flow meter

M2: 2nd flow meter

M3: 3rd flow meter

M4: Detection Department

P0, P0s, P1: Period

P2~P4: 1st~3rd set time

Pm1: 1st pump

Pm2: 2nd pump

SB1: Adjustment slot

SL1: 1st liquid supply part

SL2: Second liquid supply part

SL2B: Liquid Supply Section

t0a~t0d, t1a~t1b, t3a~t3f, t4a~t4e, t6a~t6g: time

Tb1~Tb11: 1st~11th piping section

Tg1: Liquid discharge pipe

Us1: upper surface

V1~V10: Valves 1~10

W: substrate

FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to a first embodiment.

FIG. 2 is a block diagram showing the functional configuration of the substrate processing apparatus according to the first embodiment.

FIG. 3 is a diagram showing a schematic configuration of a chemical solution processing unit.

FIG. 4 is a flowchart showing an example of the operation flow of the etching process.

5(a) and (b) are timing charts showing an example of the operation of the preprocessing.

FIGS. 6( a ) and ( b ) are timing charts showing an example of the operation of the main processing.

FIG. 7 is a flowchart showing an example of the operation flow of the main process.

FIGS. 8( a ) and ( b ) are diagrams for explaining the operation of the liquid replenishment process during the interval.

FIG. 9 is a diagram for explaining the storage amount to be monitored in the cooling box.

FIGS. 10( a ) and ( b ) are diagrams for explaining the operation of the liquid replenishment process during the interval based on the monitoring result of the storage amount of the cooling box.

FIGS. 11( a ) and ( b ) are diagrams for explaining the operation of monitoring during the non-execution period of the liquid replenishment process in the interval period.

FIGS. 12( a ) and ( b ) are diagrams for explaining the operation of monitoring the execution time of the liquid replenishment process during the interval.

FIGS. 13( a ) and ( b ) are diagrams for explaining the operation of prohibiting the circulation process based on the monitoring result of the storage amount of the cooling box.

FIGS. 14( a ) to ( c ) are timing charts of changes in execution time points of the circulation process and the liquid replenishment process.

FIG. 15 is a diagram showing an example of the operation flow of the first modification of the execution time points of the circulation process and the liquid replenishment process.

FIG. 16 is a diagram showing a schematic configuration of a chemical solution processing unit according to a modification.

FIG. 17 is a diagram showing an example of the configuration of a chemical solution processing unit in a single-wafer substrate processing apparatus according to a modification.

Hereinafter, embodiments and modifications of the present invention will be described with reference to the drawings. In the drawings, the parts having the same structure and function are denoted by the same symbols, and repeated descriptions are omitted in the following description. In addition, the drawings are only schematically shown, and do not accurately illustrate dimensions, positional relationships, and the like of various structures in each drawing.

<1. First Embodiment>

<1-1. Configuration of substrate processing apparatus>

FIG. 1 is a plan view showing an example of a schematic configuration of a substrate processing apparatus 100 according to the first embodiment. FIG. 2 is a block diagram showing an example of the functional configuration of the substrate processing apparatus 100 according to the first embodiment. The substrate processing apparatus 100 can perform chemical solution processing, cleaning processing, and drying processing on the substrate W, for example.

As shown in FIG. 1 , the substrate processing apparatus 100 includes, for example, an input unit 1 , a first conveyance unit 2 , a second conveyance unit 3 , a drying unit 4 , a first liquid treatment unit 5 , a second liquid treatment unit 6 , and a delivery unit. 7. Input unit 8 , output unit 9 and control unit 10 .

The loading unit 1 is, for example, a portion for loading a plurality of substrates W before processing into the substrate processing apparatus 100 from outside the substrate processing apparatus 100 . This input part 1 has, for example, two mounting tables 11 on which cassettes C1 in which a plurality of sheets (for example, 25 sheets) of pre-processed substrates W are accommodated are mounted, respectively.

The sending part 7 is a part for sending out, for example, a plurality of processed substrates W from the inside of the substrate processing apparatus 100 to the outside of the substrate processing apparatus 100 . The feeding part 7 is located, for example, at a position adjacent to the feeding part 1 . The feeding part 7 has, for example, two mounting tables 71 on which the cassettes C1 can be mounted, respectively. In the delivery part 7, in the state where the processed substrates W (for example, 25 sheets) are accommodated in the cassette C1, the processed substrates W together with the cassette C1 can be delivered to the substrate processing apparatus 100 as a whole. outside.

The 1st conveyance part 2 exists in the position along the input part 1 and the delivery part 7, for example. This 1st conveyance part 2 can take out, for example, all the board|substrates W accommodated in the cassette C1 mounted in the input part 1, and can convey it to the 2nd conveyance part 3. FIG. In addition, the first conveyance unit 2 may receive, for example, the processed substrates W from the second conveyance unit 3, and may convey the processed substrates W to the cassette C1 placed on the mounting table 71 of the delivery unit 7, and accommodated in the cassette C1. Here, the 1st conveyance part 2 may recognize the lot of the board|substrate W for each cassette C1, for example, and you may measure the number of sheets of the board|substrate W accommodated in the cassette C1.

The second conveyance unit 3 is movable along the longitudinal direction of the substrate processing apparatus 100 , for example. Along the moving direction of the second conveyance unit 3 , the drying treatment unit 4 , the first liquid treatment unit 5 , and the second liquid treatment unit 6 are provided in this order from the side closer to the first conveyance unit 2 . In other words, for example For example, the first liquid treatment part 5 exists in a position adjacent to the drying treatment part 4 , and the second liquid treatment part 6 exists in a position adjacent to the first liquid treatment part 5 .

The drying processing unit 4 can store and dry a plurality of substrates W in a low-pressure chamber, for example.

The first liquid processing unit 5 has, for example, a cleaning processing unit 51 , a chemical liquid processing unit 52 , and a sub-conveying unit 53 . The cleaning processing unit 51 may perform cleaning processing (also referred to as pure water cleaning processing) on the plurality of substrates W, for example, with pure water. The chemical solution processing unit 52 can perform processing on the plurality of substrates W with, for example, a processing liquid containing a chemical solution (also referred to as chemical solution processing). The sub-transport unit 53 can, for example, transfer the substrate W to and from the second transport unit 3 , and can also move up and down in each of the cleaning processing unit 51 and the chemical-solution processing unit 52 .

The second liquid processing unit 6 includes, for example, a cleaning processing unit 51 , a chemical liquid processing unit 52 , and a sub-conveying unit 53 similarly to the first liquid processing unit 5 .

The input part 8 is located in the position close to the stage 11, for example. The input unit 8 is, for example, a portion where the operator can select or input various kinds of information. The input unit 8 is constituted by, for example, a touch panel or the like. In addition, the input unit 8 may have an operation unit including buttons and the like that can perform various operations such as pressing, and may have a microphone or the like that can perform input by sound. For example, by operating the input unit 8 , the operator can designate, for each cassette C1 (lot), a recipe that prescribes a program for processing the substrates stored in the storage unit 10 c of the control unit 10 or the like in advance.

The output part 9 is located in the position close to the stage 11, for example. The output unit 9 is, for example, a portion capable of outputting various kinds of information under the control of the control unit 10 . The output unit 9 may include, for example, a display unit that can output various information visually and a speaker that can output various information audibly. The various information may include, for example, information indicating various states of the substrate processing apparatus 100 and information indicating various alarm signals (alarms).

The operation of the substrate processing apparatus 100 having the above-described configuration is collectively controlled by the control unit 10 as shown in FIG. 2 , for example. The control unit 10 includes, for example, an arithmetic unit 10a, a memory 10b, a storage unit 10c, a timer 10d, and the like.

The arithmetic unit 10a can be applied to, for example, a circuit of a central arithmetic unit (CPU; Central Processing Unit; Central Processing Unit) that operates as at least one processor.

As the memory 10b, for example, a circuit for temporarily storing information such as a random access memory (RAM; Random Access Memory) can be used. Various pieces of information temporarily acquired by various operations of the computing unit 10a are appropriately stored in the memory 10b and the like.

The storage unit 10c may be a non-volatile storage medium for storing various information such as a hard disk or a flash memory, for example. The storage unit 10c stores in advance, for example, a plurality of types of recipes and various programs such as a schedule creation program and a processing program. The arithmetic unit 10a is configured to realize various functional configurations for performing general control of the operation of the substrate processing apparatus 100 by the control unit 10 by reading and executing a program stored in the storage unit 10c, for example. Various functional configurations include, for example, a scheduler that produces a process for processing a plurality of substrates W in the substrate processing apparatus 100 and executes a process for a plurality of substrates W according to the process. The processing execution part of the processing, etc.

The timer 10d can measure various times, for example. The timer 10d may have a functional configuration realized by the arithmetic unit 10a.

For example, the control unit 10 may control the operations of the respective parts of the first liquid processing unit 5 and the second liquid processing unit 6 based on the measurement results from the various sensor units 52s of the chemical solution processing unit 52 . The sensor portion 52s includes, for example, a first flowmeter M1, a second flowmeter M2, a third flowmeter M3, a detection portion M4, and the like, which will be described later.

<1-2. Chemical Solution Processing Section>

FIG. 3 is a diagram showing a schematic configuration of the chemical solution processing unit 52 . The chemical solution treatment portion 52 selectively nitridizes the substrate W on which the silicon oxide film and the silicon nitride film are formed, for example, by immersing the substrate W in a phosphoric acid aqueous solution that functions as an etching solution. Wet etching treatment equipment for the treatment of silicon film dissolution (also called etching treatment).

As shown in FIG. 3 , the chemical solution processing part 52 includes an adjustment tank CB1, a first liquid supply part SL1, a first liquid circulation part CL1, a chemical solution processing tank CB2, a second liquid supply part SL2, and a second liquid circulation part CL2 , the liquid discharge part EL1 and the liquid replenishment part AL1.

The adjustment tank CB1 is for adjusting, for example, the temperature of the phosphoric acid aqueous solution to be supplied to the chemical solution processing tank CB2, and the like. The adjustment tank CB1 has a dual structure consisting of a first inner tank B1a and a first outer tank B1b. The first inner tank B1a stores a phosphoric acid aqueous solution that functions as an etching solution, and the first outer tank B1b recovers from the first inner groove B1a Phosphoric acid aqueous solution overflowing from the top. The first inner tank B1a is formed of, for example, a quartz or fluororesin material having excellent corrosion resistance to an aqueous phosphoric acid solution, and has a rectangular box shape in plan view. The first outer groove B1b is formed of, for example, the same material as the first inner groove B1a, and is located at a position surrounding the upper end portion of the outer periphery of the first inner groove B1a.

The first liquid supply part SL1 can perform, for example, a process of supplying the new processing liquid sent from the processing liquid supply source En0 to the adjustment tank CB1 via the first piping part Tb1 (also referred to as a first liquid supply process). Here, for example, a new solution of a phosphoric acid aqueous solution (also referred to as a pre-use phosphoric acid aqueous solution), which is a chemical solution that functions as an etching solution, is supplied as the treatment solution. The processing liquid supply source En0 is connected so as to communicate with the first end portion of the first piping portion Tb1. The processing liquid supply source En0 presses the phosphoric acid aqueous solution, for example, by a pump or a gas, from a tank provided inside or outside the substrate processing apparatus 100 for storing the phosphoric acid aqueous solution at normal temperature (for example, 25° C.) toward the first piping portion Tb1 deliver. The 1st flow control part Cf1 is provided in 1st piping part Tb1. The first flow control unit Cf1 includes, for example, a first valve V1 that opens and closes the flow path of the first piping unit Tb1, and a first flow meter M1 that measures the flow rate of the phosphoric acid aqueous solution. The second end portion of the first piping portion Tb1 is connected, for example, so as to communicate with the first outer groove B1b of the adjustment groove CB1. In the first liquid supply part SL1, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 is supplied to the first outer tank B1b at the flow rate set by the first flow control part Cf1 through the first piping part Tb1.

The 1st liquid circulation part CL1 can perform the process of heating the phosphoric acid aqueous solution discharged|emitted from the adjustment tank CB1, for example, and press-feeding and circulating it to the adjustment tank CB1 again (it is also called 1st liquid circulation process). The 1st liquid circulation part CL1 has the 2nd piping part Tb2 connected so that the 1st outer tank B1b and the 1st inner tank B1a may be connected, for example. The second piping portion Tb2 has, for example, a The first end connected so as to communicate with the bottom of the first outer groove B1b and the second end connected so as to communicate with the bottom of the first inner groove B1a. In the 2nd piping part Tb2, the 2nd valve V2, the 1st pump Pm1, and the 1st heater Ht1 are provided in this order from the upstream side. The second valve V2 opens and closes the flow path of the second piping portion Tb2. The 1st pump Pm1 press-feeds the phosphoric acid aqueous solution extracted from the 1st outer tank B1b toward the 1st inner tank B1a via the 2nd piping part Tb2. The 1st heater Ht1 heats the phosphoric acid aqueous solution which flows in the 2nd piping part Tb2 to predetermined temperature (for example, about 160 degreeC). Moreover, the 1st liquid circulation part CL1 may have, for example, the 3rd piping part Tb3 which heats the phosphoric acid aqueous solution discharged|emitted from the 1st inner tank B1a, and circulates it to the 1st inner tank B1a. For example, the third piping portion Tb3 may have a first end portion that is connected to communicate with the first inner tank B1a and a portion that communicates between the second valve V2 and the first pump Pm1 in the second piping portion Tb2 The form of the second end that is connected in such a way. Here, the third piping portion Tb3 is provided so as to merge with the second piping portion Tb2. The 3rd piping part Tb3 is provided with the 3rd valve V3 which opens and closes the flow path of the 3rd piping part Tb3.

The chemical liquid processing tank CB2 is a part (it is also called a processing part) which performs etching processing with respect to the board|substrate W with the phosphoric acid aqueous solution which functions as an etching liquid, for example. The chemical solution treatment tank CB2 has a dual structure composed of a second inner tank B2a and a second outer tank B2b, for example, like the adjustment tank CB1. The second inner tank B2a stores a phosphoric acid aqueous solution as an etching solution and immerses the substrate W. In the phosphoric acid aqueous solution, the second outer tank B2b is recovered from the phosphoric acid aqueous solution overflowing from the upper part of the second inner tank B2a. Like the first inner tank B1a, the second inner tank B2a is, for example, a member having a rectangular box shape in plan view and formed of, for example, quartz or a fluororesin material having excellent corrosion resistance to an aqueous phosphoric acid solution. The total amount (capacity) of the liquid that can be stored in the chemical liquid processing tank CB2 is set to, for example, about 60 liters. outside 2 The groove B2b is also formed of the same material as the second inner groove B2a, for example, similarly to the first outer groove B1b, and is located at a position surrounding the upper end of the outer periphery of the second inner groove B2a.

In addition, an elevator LF2 for immersing the substrate W in the phosphoric acid aqueous solution stored in the chemical liquid processing tank CB2 is provided in the chemical liquid processing tank CB2. The lifter LF2 holds a plurality of (eg, 50) substrates W aligned parallel to each other in a standing posture (a posture in which the normal to the main surface of the substrate is in the horizontal direction) by, for example, three holding bars. The lifter LF2 is provided so that it can be raised and lowered in the vertical direction by a lift mechanism (not shown). The lifter LF2 elevates, for example, the plurality of substrates W held between a processing position (the position in FIG. 3 ) where it is immersed in the phosphoric acid aqueous solution in the second inner tank B2a, and a transfer position pulled up from the phosphoric acid aqueous solution. . In the chemical solution treatment tank CB2, for example, by placing a plurality of substrates W at the treatment positions in the second inner tank B2a and immersing them in an aqueous phosphoric acid solution, the nitridation of the substrates W can be performed by an aqueous phosphoric acid solution. Etching treatment to dissolve the silicon film. At this time, silicon, which is a component constituting the substrate W (also referred to as a substrate component), is eluted from the substrate W to the phosphoric acid aqueous solution stored in the second inner tank B2a.

The second liquid supply part SL2 can perform, for example, a process (also referred to as a second liquid supply process) of supplying a pre-use phosphoric acid aqueous solution as a process liquid to the chemical solution treatment tank CB2 as a process part, and the process liquid functions as an etching solution Function. The second liquid supply part SL2 has, for example, a fourth piping part Tb4 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution sent from the adjustment tank CB1 to the chemical solution processing tank CB2 via the fourth piping part Tb4. The fourth piping portion Tb4 has, for example, a first end portion connected so as to communicate with a portion between the first heater Ht1 of the second piping portion Tb2 and the adjustment tank CB1, and a first end portion connected so as to communicate with the second outer tank B2b 2nd end of the connection. In other words, the fourth piping portion Tb4 is the second piping portion Tb2 Branched piping. In the 4th piping part Tb4, the phosphoric acid aqueous solution is pressure-fed from the 1st end part toward the 2nd end part by the 1st pump Pm1, for example. The 2nd flow control part Cf2 is provided in the 4th piping part Tb4. The second flow control unit Cf2 includes, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter M2 that measures the flow rate of the phosphoric acid aqueous solution. In the second liquid supply part SL2, for example, the phosphoric acid aqueous solution supplied from the adjustment tank CB1 is supplied to the second outer tank B2b at the flow rate set by the second flow control part Cf2 through the fourth piping part Tb4.

The second liquid circulation unit CL2 may perform, for example, a process of heating the phosphoric acid aqueous solution discharged from the chemical solution processing tank CB2 and pressurizing the aqueous solution to the chemical solution processing tank CB2 again (also referred to as a second liquid circulation process). The 2nd liquid circulation part CL2 has the 5th piping part Tb5 connected so that the 2nd outer tank B2b and the 2nd inner tank B2a may communicate, for example. For example, the fifth piping portion Tb5 has a first end connected to communicate with the bottom of the second outer tank B2b, and a second end connected to communicate with the bottom of the second inner tank B2a. The fifth piping portion Tb5 is provided with a fifth valve V5, a second pump Pm2, a sixth valve V6, a second heater Ht2, and a filter F11 in this order from the upstream side. The fifth valve V5 opens and closes the flow path of the fifth piping portion Tb5. The second pump Pm2 pressurizes the phosphoric acid aqueous solution extracted from the second outer tank B2b toward the second inner tank B2a through the fifth piping portion Tb5. The sixth valve V6 opens and closes the flow path of the fifth piping portion Tb5. The second heater Ht2 heats the phosphoric acid aqueous solution flowing in the fifth piping portion Tb5 to a predetermined temperature (for example, about 160° C.). The filter F11 is a filter for filtration for removing foreign matter in the phosphoric acid aqueous solution flowing in the fifth piping portion Tb5. Moreover, the 2nd liquid circulation part CL2 may have the 6th piping part Tb6 which heats the phosphoric acid aqueous solution discharged|emitted from the 2nd inner tank B2a, for example, and circulates it to the 2nd inner tank B2a. In this case, for example, the sixth piping portion Tb6 may be configured to communicate with the second inner groove B2a. The form of the connected 1st end part and the 2nd end part connected so that the part between the 5th valve V5 and the 2nd pump Pm2 in the 5th piping part Tb5 may be connected. The 6th piping part Tb6 is provided with the 7th valve V7 which opens and closes the flow path of the 6th piping part Tb6.

The liquid discharge part EL1 executes, for example, a phosphoric acid aqueous solution (also referred to as a treatment liquid) as a treatment liquid (also referred to as a first treatment liquid) to be used in the chemical liquid treatment tank CB2 as a treatment part after etching treatment of the substrate W. A portion where the completed phosphoric acid aqueous solution (also referred to as the first phosphoric acid aqueous solution) is discharged from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100 (also referred to as a liquid discharge process). After use, the phosphoric acid aqueous solution is in a state where the concentration of the substrate components (eg silicon) dissolved (also referred to as the dissolved concentration) is higher than that of the phosphoric acid aqueous solution before use due to the etching treatment of the substrate W in the chemical treatment tank CB2. The liquid discharge part EL1 has, for example, a seventh piping part Tb7, an eighth piping part Tb8, a cooling tank Ct1, and a ninth piping part Tb9. Here, the seventh piping portion Tb7, the eighth piping portion Tb8, and the ninth piping portion Tb9 constitute a portion (also referred to as a liquid discharge pipe) for discharging the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100. part) Tg1.

The seventh piping portion Tb7 has, for example, a first end portion connected to communicate with a portion between the second pump Pm2 and the sixth valve V6 in the fifth piping portion Tb5, and a first end portion connected to communicate with the cooling tank Ct1 2nd end of the connection. In other words, the seventh piping portion Tb7 and the fifth piping portion Tb5 constitute a portion (also referred to as a first portion) that connects the chemical solution processing tank CB2 and the cooling tank Ct1. An eighth valve V8 is provided in the seventh piping portion Tb7. The eighth valve V8 opens and closes the flow path of the seventh piping portion Tb7. Therefore, by appropriately controlling the opening and closing of the sixth valve V6 and the eighth valve V8, it is possible to selectively heat the phosphoric acid solution discharged from the chemical solution treatment tank CB2. The process of pumping and circulating the liquid to the chemical solution processing tank CB2 again (the second liquid circulation process), and the process of discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 through the cooling box Ct1 (liquid discharge process) deal with).

The eighth piping portion Tb8 has, for example, a first end connected to communicate with the upper portion of the second outer tank B2b of the chemical solution treatment tank CB2, and a second end connected to communicate with the cooling tank Ct1. In other words, the eighth piping portion Tb8 constitutes a portion (also referred to as a first portion) that connects the chemical solution processing tank CB2 and the cooling tank Ct1. Here, the eighth piping portion Tb8 can be configured such that the phosphoric acid aqueous solution does not overflow from the second outer tank B2b when the storage amount of the phosphoric acid aqueous solution stored in the second outer tank B2b of the chemical solution processing tank CB2 is excessively increased, for example. The phosphoric acid aqueous solution flows from the second outer tank B2b to the cooling box Ct1. Further, for example, when the storage amount of the phosphoric acid aqueous solution stored in the first outer tank B1b of the adjustment tank CB1 increases excessively, the phosphoric acid aqueous solution may be made to flow from the first outer tank B1b so that the phosphoric acid aqueous solution does not overflow from the first outer tank B1b. The outer tank B1b flows to the tenth piping portion Tb10 of the cooling box Ct1. In this case, the tenth piping portion Tb10 has a first end portion that is connected to communicate with the upper portion of the first outer tank B1b of the adjustment tank CB1, and is connected to the eighth piping portion Tb8 as if it were merged. way to connect the second end.

The cooling box Ct1 can store and cool the phosphoric acid aqueous solution after use. A detection part M4 for detecting the storage amount of the liquid stored in the cooling tank Ct1 is provided in the cooling tank Ct1. As the detection part M4, a liquid level meter or the like can be applied, for example.

The ninth piping portion Tb9 is connected to, for example, the cooling box Ct1 , and constitutes a portion (also referred to as a second portion) for discharging the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100 . No. 9 The pipe portion Tb9 has, for example, a first end connected to the cooling box Ct1 and a second end connected to a portion (also referred to as a processing liquid output portion) Ex0 for outputting the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100 . department. For example, a tank for recovering the phosphoric acid aqueous solution (also referred to as a recovery tank), a bucket for discarding the phosphoric acid aqueous solution (also referred to as a drain tank), or Drain pipes, etc. to be connected to treatment facilities for factory drainage. For example, a ninth valve V9 is provided in the ninth piping portion Tb9. The ninth valve V9 can open and close the flow path of the ninth piping portion Tb9. Here, the output of the phosphoric acid aqueous solution from the cooling tank Ct1 to the processing liquid output part Ex0 can be adjusted by the ninth valve V9.

The liquid replenishing unit AL1 may perform, for example, a process of replenishing a pre-use phosphoric acid aqueous solution (also referred to as a second phosphoric acid aqueous solution) as the second treatment liquid from the treatment liquid supply source En0 to the liquid discharge section EL1 (also referred to as a liquid replenishing process). Thereby, the phosphoric acid aqueous solution after use as the first treatment liquid and the pre-use phosphoric acid aqueous solution as the second treatment liquid can be mixed to generate a phosphoric acid aqueous solution (also referred to as mixed phosphoric acid aqueous solution) as a mixed solution. Here, the phosphoric acid aqueous solution before use is in a state where the dissolved concentration of the substrate component (eg, silicon) is lower than that of the phosphoric acid aqueous solution after use. Therefore, the mixed phosphoric acid aqueous solution becomes a state in which the dissolved concentration of the substrate components (such as silicon) is lower than that of the phosphoric acid aqueous solution after use. In other words, since the phosphoric acid aqueous solution before use is replenished to the liquid discharge part EL1 by the liquid replenishing part AL1, the used phosphoric acid aqueous solution discharged from the liquid discharge part EL1 can be used as the mixed phosphoric acid aqueous solution in which the dissolved concentration of the substrate components has been reduced, and the The cooling tank Ct1 is sent to the processing liquid output part Ex0 via the ninth piping part Tb9. The liquid replenishment part AL1 has, for example, an eleventh piping part Tb11 as a liquid replenishment pipe part connected to the liquid discharge part EL1. The eleventh piping portion Tb11 has, for example, a first end portion connected to the processing liquid supply source En0, and a second end portion connected so as to communicate with the eighth piping portion Tb8. The 3rd piping part Tb11 is provided with Flow control section Cf3. The 3rd flow control part Cf3 has, for example, a 10th valve V10 which opens and closes the flow path of the 11th piping part Tb11, and a 3rd flow meter M3 which measures the flow rate of the phosphoric acid aqueous solution.

The operation of each part of the above-mentioned chemical solution processing unit 52 can be controlled by the control unit 10 . For example, the control unit 10 can control: a process of supplying the pre-use phosphoric acid aqueous solution as the second process liquid to the adjustment tank CB1 by the first liquid supply part SL1 (first liquid supply process); The circulation part CL1 circulates the phosphoric acid aqueous solution (the first liquid circulation process), the second liquid supply part SL2 supplies the phosphoric acid aqueous solution before use to the chemical solution treatment tank CB2 (the second liquid supply process), and the second liquid supply part SL2. 2. The treatment of circulating the phosphoric acid aqueous solution by the liquid circulation part CL2 (the second liquid circulation treatment), and the treatment of discharging the used phosphoric acid aqueous solution as the first treatment liquid from the chemical liquid treatment tank CB2 by the liquid discharge part EL1 (liquid discharge treatment) , and a process of replenishing the pre-use phosphoric acid aqueous solution as the second process liquid to the liquid discharge part EL1 by the liquid replenishing part AL1 (liquid replenishing process).

Furthermore, for example, a concentration meter provided along the inner wall of the second inner tank B2a may detect the dissolved concentration of the specific substance eluted into the substrate W stored in the phosphoric acid aqueous solution stored in the second inner tank B2a. , and according to the dissolved concentration as the detection result, the control unit 10 opens and closes the eighth valve V8 and the ninth valve V9, and appropriately sends the used phosphoric acid aqueous solution to the processing liquid output unit Ex0.

In the substrate processing apparatus 100 having the above-mentioned configuration, for example, the used phosphoric acid aqueous solution as the first processing liquid can be discharged to the base from the chemical liquid processing tank CB2 as the processing section. Outside the plate processing apparatus 100, the pre-use phosphoric acid aqueous solution as the second processing liquid having a relatively low dissolved concentration of substrate components (eg silicon) is mixed with the used phosphoric acid aqueous solution as the first processing liquid and discharged. Thereby, for example, even if the phosphoric acid aqueous solution used as the first treatment liquid is cooled by the cooling box Ct1, the phosphoric acid aqueous solution as the treatment liquid can be discharged from the chemical treatment tank CB2 as the treatment section toward the outside of the substrate treatment apparatus 100. In the route, crystallization of the eluted component from the substrate W in the phosphoric acid aqueous solution as the treatment liquid (for example, crystallization of siloxane) is prevented from occurring.

Further, in the substrate processing apparatus 100, the liquid replenishing unit AL1 is used to produce a mixed phosphoric acid aqueous solution as a mixed solution by mixing the pre-use phosphoric acid aqueous solution as the second processing liquid with the used phosphoric acid aqueous solution as the first processing liquid , which may have a dissolved concentration that does not reach the solubility of substrate components (eg, silicon). The design of such a concentration can be realized, for example, based on the predicted value or the measured value of the dissolved concentration of the substrate component in the phosphoric acid aqueous solution after use, and the mixing ratio of the first treatment liquid and the second treatment liquid.

<1-3. Operation of the substrate processing apparatus>

Next, the operation of the substrate processing apparatus 100 having the above-described configuration will be described.

<1-3-1. Operation flow of etching process>

FIG. 4 is a flowchart showing an example of the operation flow of the etching process of the substrate W in the substrate processing apparatus 100 . This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 according to the recipe designated by the operator. Here, by immersing the substrate W on which the silicon oxide film and the silicon nitride film are formed, in the phosphoric acid aqueous solution as the treatment liquid, etching is performed to selectively dissolve the silicon nitride film in the phosphoric acid aqueous solution. The processing will be described as an example.

In the case of performing the etching process of the substrate W in the substrate processing apparatus 100, for example, as shown in FIG. 4, the described sequence of pre-processing (step S1), main processing (step S2), and post-processing (step S3) is performed. Executed one cycle of processing (also referred to as loop processing).

<1-3-1-1. Actions of preprocessing>

In the preprocessing (step S1), for example, before immersing the plurality of substrates W in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2, the phosphoric acid aqueous solution is made suitable for the chemical solution processing tank CB2 by supplying the phosphoric acid aqueous solution to the chemical solution processing tank CB2. Prepare in a manner that is active in the etching process. In addition, in the pretreatment, for example, a foaming treatment may be performed on the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2 by a configuration of introducing air bubbles (not shown).

In the pretreatment, for example, the second liquid supply part SL2 supplies the phosphoric acid aqueous solution before use to the chemical solution treatment tank CB2. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in accordance with the supply of the pre-use phosphoric acid aqueous solution from the second liquid supply part SL2. Here, for example, if the supply amount of the phosphoric acid aqueous solution before use to the chemical solution processing tank CB2 by the second liquid supply part SL2 is equal to the discharge amount of the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the liquid discharge part EL1, the phosphoric acid The aqueous solution will not overflow from the chemical solution treatment tank CB2. Here, for example, by opening the flow paths of the fifth piping portion Tb5 and the seventh piping portion Tb7 by the fifth valve V5 and the eighth valve V8, the used phosphoric acid aqueous solution may pass through the fifth piping portion Tb5 from the chemical solution processing tank CB2. The piping portion Tb5 and the seventh piping portion Tb7 are discharged toward the cooling tank Ct1, and the used phosphoric acid aqueous solution may be discharged toward the cooling tank Ct1 from the chemical solution processing tank CB2 via the eighth piping portion Tb8. Also, at this time, for example, liquid supplementation The charge portion AL1 generates a mixed phosphoric acid aqueous solution by supplying the phosphoric acid aqueous solution before use to the liquid discharge portion EL1, and mixing the phosphoric acid aqueous solution before use with the used phosphoric acid aqueous solution in the liquid discharge portion EL1. Here, the mixed phosphoric acid aqueous solution is generated in the cooling box Ct1, for example. This mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the processing liquid output part Ex0 through the ninth piping part Tb9 by, for example, opening of the flow path of the ninth piping part Tb9 by the ninth valve V9.

In other words, in the pretreatment, a liquid supply step, a liquid discharge step, and a liquid replenishment step are performed. The liquid supply step includes, for example, a step of supplying the phosphoric acid aqueous solution to the chemical solution treatment tank CB2 via the fourth piping portion Tb4 serving as the liquid supply portion. The liquid discharge step includes, for example, a step of discharging the used phosphoric acid aqueous solution used in the etching step from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100 via the liquid discharge pipe portion Tg1. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in accordance with the supply of the pre-use phosphoric acid aqueous solution via the fourth piping part Tb4. The liquid replenishing step includes, for example, replenishing the used phosphoric acid aqueous solution with a lower dissolved concentration of the substrate component than the used phosphoric acid aqueous solution to the liquid discharge portion EL1 through the eleventh piping portion Tb11 serving as the liquid replenishing pipe portion, thereby disposing the used phosphoric acid solution. A process in which the aqueous solution is mixed with the phosphoric acid aqueous solution before use to generate a mixed phosphoric acid aqueous solution as a mixed solution. Thereby, for example, even in the pretreatment, the crystallization of the eluted components from the substrate W in the used phosphoric acid aqueous solution can be carried out in the route of discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 toward the outside of the substrate processing apparatus 100 ( For example, crystallization of siloxane) hardly occurs.

In the pre-processing (step S1) before the main processing (step S2), for example, in the liquid supply step, the primary phosphoric acid aqueous solution may be supplied to the chemical liquid processing tank CB2 via the fourth piping portion Tb4, The phosphoric acid aqueous solution may be divided into a plurality of times and supplied. In other words, in the liquid supply step, for example, the phosphoric acid aqueous solution may be supplied to the chemical solution treatment tank CB2 through the fourth piping portion Tb4 by the second liquid supply portion SL2 at least once. Also, for example, in the liquid discharge step, the used phosphoric acid aqueous solution may be discharged once from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 through the liquid discharge pipe portion Tg1, or the used phosphoric acid aqueous solution may be discharged in a plurality of times. . In other words, in the liquid discharge step, for example, the used phosphoric acid aqueous solution may be discharged from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 through the liquid discharge pipe part Tg1 at least once by the liquid discharge part EL1 . Moreover, for example, in the liquid replenishing step, the phosphoric acid aqueous solution before use may be replenished to the liquid discharge part EL1 through the eleventh piping part Tb11 once, or the phosphoric acid aqueous solution before use may be divided into a plurality of times and replenished. In other words, in the liquid replenishing step, for example, the phosphoric acid aqueous solution before use may be replenished to the liquid discharge part EL1 through the 11th piping part Tb11 by the liquid replenishing part AL1 at least once.

FIG. 5 is a sequence diagram showing an example of the operation of the preprocessing. 5(a) shows the supply amount (also referred to as the liquid supply amount) of the phosphoric acid aqueous solution (new solution) before use from the second liquid supply part SL2 to the chemical solution treatment tank CB2 during the period P0 while the pretreatment is being performed, A timing chart showing temporal changes in the opening and closing status of the fourth valve V4 of the second liquid supply part SL2 and the discharge amount (also referred to as liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the liquid discharge part EL1. FIG. 5(b) shows the amount of phosphoric acid aqueous solution before use from the liquid replenishing part AL1 to the liquid discharge part EL1 (also referred to as the liquid replenishing amount) in the pretreatment period P0, and the tenth valve of the liquid replenishing part AL1. The timing chart of the time change of the opening and closing status of the V10.

Here, for example, in the case where the liquid supply and liquid discharge are equal, in the recipe For example, the length of the period P0 before the pretreatment, the liquid supply amount, and the liquid replenishment amount are specified. The liquid replenishment amount may be specified as, for example, 1/N (N is an integer of 1 to 10) or the like relative to the ratio of the liquid supply amount. For example, in the case where the period P0 is 180 seconds, the liquid supply amount is 2 liters, and N is 2, etc., it can be prescribed by a recipe. In this case, the liquid discharge volume is 2 liters, and the liquid replenishment volume is 1 liter (=2 liters/N=2 liters/2).

In the example of FIG. 5, for example, in the period P0 between the time t0a and the time t0d, and in the period P0s between the time t0a and the time t0c, the phosphoric acid aqueous solution (new solution) before use is opened by the opening of the fourth valve V4. It is supplied to the chemical liquid processing tank CB2 at a flow rate of about Fr0 [ml/min], and the used phosphoric acid aqueous solution is supplied from the chemical liquid processing tank CB2 to the liquid discharge part EL1 at a flow rate of about Fr0 [ml/min]. At this time, in the period P0s/N in which the period P0s between the time t0a and the time t0b is divided by N, the phosphoric acid aqueous solution (new solution) before use is opened at a rate of about Fr0 [ml/min] by the opening of the tenth valve V10. The flow rate is supplemented to the liquid discharge portion EL1. Fr0 is set to, for example, 2000 ml/min or the like.

However, in the pretreatment, the liquid supply step and the liquid discharge step may not be performed. In this case, even in the liquid replenishing step, the pre-use phosphoric acid aqueous solution may be replenished to the liquid discharge part EL1 at least once by the liquid replenishing part AL1 via the eleventh piping part Tb11, for example. In this way, for example, the pre-use phosphoric acid aqueous solution can be supplied to the liquid discharge part EL1 at least once before the etching process of the substrate W in the main process, so that when the etching process is performed in the main process, the chemical solution treatment tank CB2 The used phosphoric acid aqueous solution discharged toward the liquid discharge part EL1 and the pre-use phosphoric acid aqueous solution replenished from the liquid replenishing part AL1 toward the liquid discharge part EL1 are easily mixed. Thereby, for example, in the route of discharging the phosphoric acid aqueous solution from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100 after use, Crystallization of components eluted from the substrate W in the phosphoric acid aqueous solution after use is unlikely to occur.

<1-3-1-2. Actions of main processing>

In the main process (step S2 ), an etching process is performed on the plurality of substrates W in the chemical solution processing unit 52 . Here, for example, the plurality of substrates W held by the elevator LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2. Thereby, the step (also referred to as an etching step) of etching the plurality of substrates W with the phosphoric acid aqueous solution in the chemical solution processing unit 52 is performed. At this time, the first liquid supply process by the first liquid supply part SL1, the first liquid circulation process by the first liquid circulation part CL1, and the process by the second liquid supply part SL2 are appropriately parallelized. The second liquid supply process, the second liquid circulation process by the second liquid circulation part CL2, the liquid discharge process by the liquid discharge part EL1, and the liquid replenishment process by the liquid replenishment part AL1.

Specifically, also in the main process, similarly to the pre-processing, for example, the second liquid supply part SL2 supplies the phosphoric acid aqueous solution before use to the chemical solution processing tank CB2. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in accordance with the supply of the pre-use phosphoric acid aqueous solution from the second liquid supply part SL2. In this case, for example, the liquid replenishing part AL1 replenishes the phosphoric acid aqueous solution before use to the liquid discharge part EL1, and mixes the phosphoric acid aqueous solution before use with the used phosphoric acid aqueous solution in the liquid discharge part EL1, thereby generating a mixed phosphoric acid aqueous solution. This mixed phosphoric acid aqueous solution is sent from the liquid discharge part EL1 toward the processing liquid output part Ex0. Therefore, also in the main process, the liquid supply step, the liquid discharge step, and the liquid replenishment step are performed similarly to the pretreatment. Then, for example, when etching is performed by the chemical solution treatment tank CB2 in the etching step, the pre-use phosphoric acid aqueous solution is passed through the fourth piping portion Tb4 by the first liquid supply portion SL1 in the liquid supply step. It is supplied to the chemical solution processing tank CB2, and in the liquid replenishment step, the phosphoric acid aqueous solution before use is replenished to the liquid discharge part EL1 through the eleventh piping part Tb11 by the liquid replenishment part AL1.

In this way, even in the main process, for example, when the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100, the phosphoric acid aqueous solution before use having a relatively low dissolved concentration of silicon can be mixed with the used phosphoric acid solution. The phosphoric acid aqueous solution is finished and discharged, and in the route of discharging the used phosphoric acid aqueous solution from the chemical treatment tank CB2 toward the outside of the substrate processing apparatus 100, the crystallized silicon, which is the eluted component from the substrate W in the used phosphoric acid aqueous solution Crystallization of oxane hardly occurs.

Here, for example, in the liquid replenishing step, as long as the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution does not reach the solubility by mixing the pre-use phosphoric acid aqueous solution with the used phosphoric acid aqueous solution, the used phosphoric acid aqueous solution is removed from the chemical treatment tank. In the path of CB2 being discharged to the outside of the substrate processing apparatus 100, crystallization of the siloxane, which is crystallized as the eluted component from the substrate W in the phosphoric acid aqueous solution after use, is prevented from occurring.

In the present embodiment, for example, in the liquid supply step, if a configuration such as supplying the pre-use phosphoric acid aqueous solution to the chemical solution treatment tank CB2 via the fourth piping portion Tb4 serving as the liquid supply pipe portion is adopted, it is possible to use The phosphoric acid aqueous solution before use to be supplied to the chemical solution processing tank CB2 is also used for the purpose of mixing the phosphoric acid aqueous solution after use in the liquid discharge part EL1. Thereby, for example, the phosphoric acid aqueous solution can be mixed in the first liquid supply part SL1 and the second liquid supply part SL2 for supplying the phosphoric acid aqueous solution before use to the chemical solution processing tank CB2, and the phosphoric acid aqueous solution for replenishing the phosphoric acid solution in the liquid discharge part EL1 until the use is completed. Between the liquid replenishing parts AL1 of the phosphoric acid aqueous solution before use, at least a part of the configuration is shared. For example, a treatment liquid can be Shared supply source En0 and its surrounding piping. As a result, for example, the configuration of the substrate processing apparatus 100 can be simplified.

In addition, in the present embodiment, the liquid discharge step includes a first liquid discharge step, a liquid cooling step, and a second liquid discharge step. The first liquid discharge step includes, for example, a step of discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to at least one of the seventh piping portion Tb7 and the eighth piping portion Tb8 as the first part included in the liquid discharging pipe portion Tg1 . The liquid cooling step includes, for example, a step of cooling the used phosphoric acid aqueous solution or the mixed phosphoric acid aqueous solution in the cooling tank Ct1 included in the liquid discharge portion EL1 and connected to the seventh piping portion Tb7. The second liquid discharge step includes, for example, discharging the mixed phosphoric acid aqueous solution from the cooling tank Ct1 to the outside of the substrate processing apparatus 100 via a ninth piping portion Tb9 that is included in the liquid discharging pipe portion Tg1 and is connected to the second portion of the cooling tank Ct1. step. With such a configuration, for example, even if the used phosphoric acid aqueous solution is cooled by the cooling box Ct1, the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100 as the source of the used phosphoric acid aqueous solution. Crystallization of the siloxane, which is the crystallization of the eluted component of the substrate W, still hardly occurs.

Then, in the main process (step S2), for example, when the plurality of substrates W held in the elevator LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2 for a predetermined time, the plurality of substrates W held in the elevator LF2 The substrate W is pulled up from the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2 by the ascent of the elevator LF2. In the main process (step S2 ), for example, an etching process may be sequentially performed on a plurality of groups of substrates W formed of a plurality of substrates W, respectively. In this case, by the lifting and lowering of the elevator LF2, etc., the substrates W of the plural groups composed of the plural substrates W, respectively, are repeatedly executed. The plurality of substrates W are sequentially immersed in the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2, and the plurality of substrates W are pulled up from the phosphoric acid aqueous solution. Furthermore, the plurality of substrates W pulled up from the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2 are cleaned with pure water, for example, in the cleaning processing section 51 adjacent to the chemical liquid processing section 52. .

However, at the time of main processing, for example, the phosphoric acid aqueous solution of about 50 to 100% of the capacity of the chemical liquid processing tank CB2 may be replaced. In this case, in the main process, for example, when the substrate W is etched by the chemical solution treatment tank CB2 in the etching process, the process performed by the second liquid supply part SL2 in the liquid supply process may be used. Two or more supply of the pre-use phosphoric acid aqueous solution via the fourth piping portion Tb4 to the chemical solution treatment tank CB2, and the pre-use phosphoric acid aqueous solution via the eleventh piping portion Tb11 by the liquid replenishing portion AL1 in the liquid replenishing step. The two or more replenishment of the liquid discharge part EL1 is performed synchronously. Here, in the main process, when performing the etching process, the phosphoric acid aqueous solution before use may be supplied from the second liquid supply part SL2 to the chemical solution processing tank CB2, and the used phosphoric acid aqueous solution may be discharged from the chemical solution processing tank CB2 to the liquid. The discharge of the part EL1 and the supply of the phosphoric acid aqueous solution before use from the liquid replenishing part AL1 to the liquid discharge part EL1 are divided into M times specified by the division number M, and are executed in synchronization with each other.

If such an operation is adopted, for example, in the main process, the state of the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2 with respect to time is likely to become substantially uniform. Furthermore, for example, the dissolved concentration of the substrate components in the mixed phosphoric acid aqueous solution generated in the liquid discharge portion EL1 can be easily uniformized. As a result, for example, in the route of discharging the used phosphoric acid aqueous solution from the chemical treatment tank CB2 toward the outside of the substrate processing apparatus 100, the crystallization of the eluted component from the substrate W in the used phosphoric acid aqueous solution (crystallization of siloxane) will occur. Hard to happen.

FIG. 6 is a sequence diagram showing an example of the operation of the main process. Fig. 6(a) shows the supply amount (liquid supply amount) of the phosphoric acid aqueous solution (new solution) before use from the second liquid supply part SL2 to the chemical solution treatment tank CB2 in the period P1 while the main process is being performed (liquid supply amount), the second liquid A timing chart showing temporal changes in the opening and closing status of the fourth valve V4 of the supply part SL2 and the discharge amount (liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the liquid discharge part EL1. Fig. 6(b) shows the amount (liquid replenishment) of the phosphoric acid aqueous solution before use from the liquid replenishing part AL1 to the liquid discharge part EL1 in the period P1 of the main process, and the opening and closing of the tenth valve V10 of the liquid replenishing part AL1. Timing chart of temporal changes in conditions, etc.

Here, when the liquid supply amount and the liquid discharge amount are equal, for example, the length of the period P1 of the main process, the liquid supply amount, the liquid replenishment amount, and the number of divisions M are prescribed in the recipe. The liquid replenishment amount may be specified by, for example, 1/N (N is an integer of 1 to 10) or the like in the ratio of the liquid supply amount. For example, there may be cases where conditions such as period P1 of 7200 seconds, liquid supply amount of 50 liters, N of 10, and M of 10 are prescribed by the recipe. In this case, the liquid supply volume for each time is 5 liters (=50 liters/M=50 liters/10), the liquid discharge volume is 50 liters, and the liquid discharge volume for each time is 5 liters (=50 liters/10= 50 liters/M), the liquid replenishment volume is 5 liters (=50 liters/10=50 liters/N), and the liquid replenishment volume per time is 0.5 liters (=5 liters/10=5 liters/M).

In the example of FIG. 6, for example, in each period (for example, 720 seconds) that divides the period P1 from time t1a to time t1b into ten, the phosphoric acid aqueous solution (new solution) before use is opened by the opening of the fourth valve V4. It is supplied to the chemical liquid processing tank CB2 at a flow rate of about Fr1 [ml/min], and the phosphoric acid aqueous solution after use is supplied from the chemical liquid processing tank CB2 at a flow rate of about Fr1 [ml/min]. It is supplied to the liquid discharge part EL1. At this time, in each period (for example, 720 seconds) that divides the period P1 from the time t1a to the time t1b into ten periods (for example, 720 seconds), the phosphoric acid aqueous solution (new solution) before use is opened by the tenth valve V10 and the amount of about Fr1 [ml] The flow rate of /min] is supplemented to the liquid discharge part EL1. Fr1 is set to, for example, 800 ml/min or the like.

FIG. 7 is a flowchart showing an example of the operation flow of the main process. This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 . In step S21 of FIG. 7 , the control unit 10 recognizes the recipe designated by the operator for the plurality of substrates W to be processed. In step S22, the control unit 10 determines that the pre-use phosphoric acid aqueous solution is directed from the second liquid supply part SL2 to the chemical solution processing tank CB2 when performing the etching process in the main process, in the recipe defined in the step S21. The supply of the phosphoric acid aqueous solution after use, the discharge of the phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the liquid discharge part EL1, and the replenishment of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 before use are divided into M times respectively and are performed. called the split function) is enabled. Here, if the division function is valid, in step S23, when the etching process in the main process is performed, the phosphoric acid solution before use is supplied from the second liquid supply part SL2 to the chemical solution treatment tank CB2, and the phosphoric acid after use is respectively supplied. The discharge of the aqueous solution from the chemical solution processing tank CB2 to the liquid discharge part EL1 and the replenishment of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 before use are divided and performed. On the other hand, if the division function is not effective, in step S24, when the etching process in the main process is performed, the supply and use of the phosphoric acid aqueous solution before use from the second liquid supply part SL2 to the chemical solution processing tank CB2 are not separately performed. The discharge of the phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the liquid discharge part EL1 is completed, and the replenishment of the phosphoric acid aqueous solution before use from the liquid replenishment part AL1 to the liquid discharge part EL1 is divided and performed.

<1-3-1-3. Post-processing actions>

In the post-processing (step S3 ), for example, after the main processing (step S2 ) is completed, preparations for execution of the next cycle processing are performed by supplying the phosphoric acid aqueous solution to the chemical solution processing tank CB2 , or the like.

<1-3-2. Operation during the interval period of etching process>

In the substrate processing apparatus 100, due to the processing plan of the substrate W or the maintenance plan, there is a case where a long waiting time is required after the etching process of the substrate W is performed before the etching process of the next substrate W is performed. In this case, there is a period during which the etching process of the substrate W is not performed in the chemical solution processing unit 52 (referred to as a non-execution period and an interval period). During this interval, if the used phosphoric acid aqueous solution remains in the liquid discharge part EL1 of the substrate processing apparatus 100 for a long period of time, the crystallization of the eluted component from the substrate W occurs (siloxane) in the used phosphoric acid aqueous solution. the possibility of crystallization).

<1-3-2-1. Liquid replenishment treatment during interval>

In the substrate processing apparatus 100 of the present embodiment, for example, after the control unit 10 performs the etching process on the substrate W performed by the chemical solution processing tank CB2 in the etching step, the control unit 10 may perform the chemical treatment in the next etching step. During the interval between the etching process of the substrate W by the liquid processing tank CB2, the pre-use phosphoric acid aqueous solution performed by the liquid replenishing part AL1 in the liquid replenishing step is performed at a predetermined time point and is discharged to the liquid through the eleventh piping part Tb11. Supplement to Section EL1. Hereinafter, the pre-use phosphoric acid aqueous solution performed by the liquid replenishing part AL1 in the liquid replenishing step in the interval period is passed through the 11th piping part. The process of replenishing Tb11 toward the liquid discharge part EL1 is called "interval period liquid replenishment process". Moreover, as a predetermined time point, for example, it can be a time point every time the first predetermined time P2 is counted by the timer 10d which is one of the functions of the control unit 10 . The time point at which the count by the timer 10d starts may be, for example, the time point at which the etching process of the chemical solution processing unit 52 ends or the substrate processing apparatus 100 in a state in which the etching process is not performed in the chemical solution processing unit 52 . The chemical solution processing unit 52 set to the automatic operation state is set to the standby state at the time point, and the time point at which the liquid replenishment process is completed in the interval period, and the like. The first predetermined time P2 can be set to an arbitrary time between about 1 and 48 hours, for example, in accordance with an input by an operator via the input unit 8 . In addition, as a predetermined time point, the replenishment amount of the phosphoric acid aqueous solution to the liquid discharge part EL1 before use by the liquid replenishing part AL1 may be, for example, the capacity of the cooling tank Ct1 (for example, about 5 to 50 liters) multiplied by 1/ A predetermined amount of about n (n is an integer from 1 to 10).

FIG. 8 is a diagram for explaining the operation of the liquid replenishment process during the interval. FIG. 8( a ) is a flowchart showing an example of a timing chart of the liquid replenishment processing during the interval, and FIG. 8( b ) is a flowchart showing an example of the operation flow of the liquid replenishing processing during the interval. This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 .

As shown in FIG. 8( a ), for example, the liquid replenishment process during the interval may be executed every time the first predetermined time P2 elapses during the interval.

Here, for example, by performing the processing of steps S41 to S47 in FIG. 8( b ), the liquid replenishment processing in the interval period can be performed.

In step S41, the control part 10 determines whether the chemical|medical solution processing part 52 is in a standby state. Here, the determination in step S41 is repeated until the chemical solution processing unit 52 is in the standby state, and when the chemical solution processing unit 52 is in the standby state, the process proceeds to step S42.

In step S42, the control part 10 starts the process (it is also called a 1st count process) which counts the elapse of the 1st predetermined time P2.

In step S43 , the control unit 10 determines whether or not the loop processing including preprocessing, main processing, and postprocessing performed by the chemical solution processing unit 52 has started. Here, when the loop process has started, the process returns to step S41. On the other hand, if the loop processing has not yet started, the process proceeds to step S44.

In step S44, the control part 10 determines whether the 1st predetermined time P2 has passed since the 1st count process was started. Here, if the first predetermined time P2 has not elapsed since the start of the first counting process, the process returns to step S43. On the other hand, when the first predetermined time P2 has elapsed since the start of the first counting process, the process proceeds to step S45.

In step S45, the control part 10 starts the liquid replenishment process for the interval period by the liquid replenishment part AL1. At this time, for example, the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, whereby the mixed phosphoric acid aqueous solution can be sent from the cooling tank Ct1 to the processing liquid output portion Ex0.

In step S46, the control part 10 determines whether the replenishment amount of the pre-processing phosphoric acid aqueous solution from the liquid replenishing part AL1 to the liquid discharging part EL1 in the interval liquid replenishing process has reached or not. given quantity. Here, the control unit 10 repeats the determination in step S46 until the replenishment amount reaches the predetermined amount, and when the replenishment amount reaches the predetermined amount, ends the interval period liquid replenishment process in step S47, and returns to step S42.

With such a configuration, for example, even when there is a gap period, the used phosphoric acid aqueous solution is eluted from the substrate W in the route of discharging the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100 . Crystallization of components (crystallization of siloxane) also hardly occurs.

<1-3-3. Action corresponding to the storage amount in the cooling box>

As described above, for example, when the chemical solution processing unit 52 performs the circulation process including the etching process, the used phosphoric acid aqueous solution is transported from the chemical solution processing tank CB2 to the cooling tank Ct1 of the liquid discharge unit EL1. Therefore, for example, it is possible to ensure a certain level of accommodating capacity in the cooling box Ct1 in advance so that the circulation process can be performed even in the interval period or the like. Therefore, in the substrate processing apparatus 100, for example, the storage amount of the phosphoric acid aqueous solution in the cooling box Ct1 may be monitored, and an operation according to the storage amount may be performed.

FIG. 9 is a diagram for explaining the storage amount to be monitored in the cooling box Ct1. Here, for example, for the storage volume of the cooling box Ct1, the detection unit M4 can monitor the storage volume of the four levels (the first to fourth storage volumes Lv1 to Lv4). In this case, in the substrate processing apparatus 100, for example, a process of detecting the storage amount of the liquid stored in the cooling box Ct1 (also referred to as a detection step) is performed. Here, for example, the first storage volume Lv1 may be preset as the upper limit level, the second storage volume Lv2 may be set as the quantitative level, the third storage volume Lv3 may be set as the first threshold value incapable level, and the fourth storage volume Lv3 may be preset. Volume Lv4 line as 2nd Pro The situation of the non-supplementary level of the limit value. For example, the third storage amount Lv3 and the fourth storage amount Lv4 may be different or the same.

<1-3-3-1. Monitoring of liquid replenishment treatment during interval>

For example, the control unit 10 may detect by the detection unit M4 that the storage amount of the liquid stored in the cooling tank Ct1 in the detection step has reached the fourth storage amount Lv4 serving as the second threshold value. The execution of liquid replenishment treatment during the interval is prohibited. Such a process may be carried out by the control unit 10 for each of the first liquid processing unit 5 and the second liquid processing unit 6, respectively. With such a configuration, for example, when the liquid having the fourth storage amount Lv4 or more, which is the second threshold value, is stored in the cooling tank Ct1, during the interval period in which the etching process by the chemical solution processing tank CB2 is not performed, The replenishment of the phosphoric acid aqueous solution before use toward the liquid discharge portion EL1 at a predetermined time is not performed.

FIG. 10 is a diagram for explaining the operation of the liquid replenishment process during the interval based on the monitoring result of the storage amount of the cooling tank Ct1. Fig. 10(a) shows an example of a timing chart of the liquid replenishment process during the interval based on the monitoring result of the storage amount of the cooling tank Ct1, and Fig. 10(b) shows the timing chart based on the monitoring result of the storage amount of the cooling tank Ct1. A flowchart showing an example of the operation flow of the liquid replenishment process during the interval. This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 .

As shown in FIG. 10( a ), for example, the liquid replenishment process during the interval is usually performed every time the first predetermined time P2 elapses during the interval, but at time t3b, the liquid replenishment process is stored in the cooling Since the storage volume of the liquid in the tank Ct1 has reached the fourth storage volume Lv4 which is the second threshold value, the liquid replenishment process during the interval period is not performed, but is performed from the beginning. The first counting process for measuring the elapse of the first predetermined time P2.

The operation flow of FIG. 10(b) inserts the processor of step S44b between the processing of step S44 and the processing of step S45 in the operation flow of FIG. 8(b). In step S44b of FIG. 10( b ), the control unit 10 determines by the detection unit M4 whether or not the storage amount of the liquid stored in the cooling tank Ct1 has reached the fourth storage amount Lv4 serving as the second threshold value. Here, if the storage volume of the liquid has reached the fourth storage volume Lv4, the process returns to step S42. On the other hand, if the storage amount of the liquid has not reached the fourth storage amount Lv4, the process proceeds to step S45.

According to such a configuration, for example, when the etching process is performed on the substrate W after the interval period is canceled, it is possible to suppress the inconvenience that occurs during the etching process because the used phosphoric acid aqueous solution cannot be discharged from the chemical solution processing tank CB2 to the liquid discharge portion EL1. situation of occurrence.

However, for example, it can be preset that the storage amount detected by the detection part M4 reaches the fourth storage volume Lv4 during the interval period because the liquid discharge part EL1 including the detection part M4 and the cooling tank Ct1 is in a state where Some kind of undesired situation that occurs and lasts for too long to be able to carry out the liquid replenishment treatment during the interval. Therefore, for example, during the interval period, the control unit 10 may send the first alarm through the output unit 9 in response to the fact that the time during which the liquid replenishment process is not performed has reached the second predetermined time P3 during the interval period. The second predetermined time P3 is set to, for example, about a predetermined multiple (for example, 2 to 5 times) of the first predetermined time P2. The first alarm can be applied, for example, to display of a predetermined warning screen, output of a warning sound, and the like. Such a process may be carried out by the control unit 10 for each of the first liquid processing unit 5 and the second liquid processing unit 6, respectively.

FIG. 11 is a diagram for explaining an operation of monitoring a period (also referred to as a non-execution period) during which the liquid replenishment process is not performed during the interval. FIG. 11( a ) shows an example of a timing chart of the monitoring operation during the non-execution period of the liquid replenishment process in the interval period, and FIG. 11( b ) shows an example of the operation flow of the monitoring operation during the non-execution period of the liquid replenishing process during the interval period. flow chart. This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 .

As shown in FIG. 11( a ), for example, in response to the fact that the non-execution period of the liquid replenishment process in the interval period has reached the second predetermined time P3 , the output unit 9 may transmit the first alarm.

Here, for example, by performing the processing of steps S51 to S57 in FIG. 11( b ), the monitoring operation during the non-execution period of the liquid replenishment process in the interval period can be performed in the interval period.

In step S51, the control part 10 determines whether the chemical|medical solution processing part 52 is in a standby state. Here, the control unit 10 repeats the determination in step S51 until the chemical solution processing unit 52 enters the standby state, and proceeds to step S52 when the chemical solution processing unit 52 enters the standby state.

In step S52, the control part 10 starts the process (it is also called 2nd count process) which counts the elapse of the 2nd predetermined time P3.

In step S53 , the control unit 10 determines whether or not processing including replenishment of the phosphoric acid aqueous solution before use to the liquid discharge unit EL1 by the liquid replenishing unit AL1 (also referred to as a liquid replenishment containing process) has been executed. In the treatment of liquid supplements, such as Including pre-treatment, main treatment and post-treatment cycle treatment, and liquid replenishment treatment during interval. Here, if the liquid replenishment containing process has been executed, the process proceeds to step S57, and if the execution of the liquid replenishment containing process ends, the process returns to step S51. On the other hand, if the liquid replenishment containing process has not been performed, the process proceeds to step S54.

In step S54, the control part 10 determines whether the 2nd predetermined time P3 has passed since the 2nd count process was started. Here, if the second predetermined time P3 has not elapsed since the start of the second counting process, the process returns to step S53. On the other hand, when the second predetermined time period P3 has elapsed since the start of the second counting process, the process proceeds to step S55.

In step S55 , the control unit 10 transmits the first alarm through the output unit 9 .

In step S56, the control part 10 sets it as the state which prohibits the execution of the liquid replenishment process and the circulation process during an interval (also called a process prohibition state). At this time, for example, the control unit 10 may leave the plurality of substrates W in the cleaning processing unit 51 and the like without putting the plurality of substrates W into the chemical processing tank CB2 of the chemical processing unit 52 . hard-to-change areas.

By adopting such a configuration, for example, it is possible to deal with some kind of inconvenience that occurs in the liquid discharge portion EL1 including the detection portion M4 and the cooling tank Ct1. Furthermore, for example, when a certain defect occurs in the liquid discharge part EL1 including the detection part M4 and the cooling box Ct1, the execution of the circulation process is prohibited, so that the occurrence of the defect in the etching process of the substrate W can be avoided.

Also, for example, it can be preset as follows: in the liquid replenishment treatment during the interval, the interval The state in which the liquid replenishment process is performed at intervals continues for an excessively long time due to some kind of malfunction caused by the liquid replenishment part AL1 including the third flow meter M3 and the liquid discharge part EL1 including the cooling tank Ct1. Therefore, for example, in the interval period, the control unit 10 may respond to the fact that the time (also referred to as the execution time) when the liquid replenishment process is performed during the interval period reaches the third predetermined time P4, and sends the third predetermined time P4 through the output unit 9. 2 alerts. The third predetermined time P4 is set to, for example, a time of about 110 to 150% of a time (also referred to as a required time) that is normally preset for the liquid replenishment process during the interval. The second alarm can be applied, for example, to display of a predetermined warning screen, output of a warning sound, and the like. Such a process may be carried out by the control unit 10 for each of the first liquid processing unit 5 and the second liquid processing unit 6, respectively.

FIG. 12 is a diagram for explaining the operation of monitoring the execution time of the liquid replenishment process during the interval. Fig. 12(a) shows an example of a timing chart of the monitoring operation of the execution time of the liquid replenishment process during the interval, and Fig. 12(b) is a flowchart showing an example of the operation flow of the monitoring operation of the execution time of the liquid replenishment process during the interval . This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 .

As shown in FIG. 12( a ), for example, the output unit 9 may send the second alarm in response to the fact that the execution time of the liquid replenishment process has reached the third predetermined time P4 during the interval.

Here, for example, by performing the processes of steps S61 to S66 in FIG. 12( b ), the monitoring operation of the execution time of the liquid replenishment process during the interval can be performed.

In step S61, the control unit 10 determines whether the interval period liquid replenishment process has been Body Supplement AL1 started. Here, the determination in step S61 is repeated until the interval period liquid replenishment process is started, and when the interval period liquid replenishment process is started, the process proceeds to step S62.

In step S62, the control part 10 starts the process (it is also called a 3rd count process) which counts the elapse of the 3rd predetermined time P4.

In step S63, the control unit 10 determines whether or not the interval period liquid replenishment process has ended. Here, if the liquid replenishment process has not been completed during the interval, the process proceeds to step S64. On the other hand, when the liquid replenishment process is completed during the interval, the process returns to step S61.

In step S64, the control part 10 determines whether the 3rd predetermined time P4 has passed since the 3rd count process was started. Here, if the third predetermined time P4 has not elapsed since the start of the third counting process, the process returns to step S63. On the other hand, when the 3rd predetermined time P4 has passed since the 3rd count process started, it progresses to step S65.

In step S65 , the control unit 10 causes the transmission of the second alarm to be performed through the output unit 9 .

In step S66, the control part 10 sets it as the state which prohibits the execution of the liquid replenishment process and the circulation process during an interval (process prohibition state). In this case, for example, the control unit 10 may leave the plurality of substrates W in the area where the change of the plurality of substrates W of the cleaning treatment unit 51 and the like is unlikely to occur without putting the substrates W into the chemical treatment tank CB2 of the chemical treatment unit 52. .

By adopting such a configuration, for example, it is possible to deal with the cooling caused by the liquid replenishment part AL1 and the cooling Some kind of failure occurred in the liquid discharge part EL1 of the tank Ct1. Furthermore, for example, when some kind of failure occurs due to the liquid replenishing portion AL1 and the liquid discharge portion EL1 including the cooling tank Ct1, the execution of the circulation process is prohibited, so that the occurrence of failure in the etching process of the substrate W can be avoided.

<1-3-3-2. Monitoring of loop processing>

For example, the control unit 10 may detect by the detection unit M4 that the storage amount of the liquid stored in the cooling tank Ct1 in the detection step has reached the third storage amount Lv3 serving as the first threshold value. The execution of the etching process on the substrate W by the chemical solution processing tank CB2 is prohibited. Such a process may be carried out by the control unit 10 for each of the first liquid processing unit 5 and the second liquid processing unit 6, respectively. With such a configuration, for example, when the substrate W is subjected to the etching process, the used phosphoric acid aqueous solution cannot be discharged from the chemical solution processing tank CB2 to the liquid discharge portion EL1 , and the occurrence of defects in the etching process can be suppressed.

FIG. 13 is a diagram for explaining the operation of prohibiting the circulation process according to the monitoring result of the storage amount of the cooling box Ct1. Fig. 13(a) shows an example of a timing chart for the inhibition of the cyclic processing according to the monitoring result of the storage amount of the cooling box Ct1, and Fig. 13(b) shows the inhibition of the cyclic processing according to the monitoring result of the storage amount of the cooling box Ct1 A flow chart of an example of the operation flow of . This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 .

As shown in FIG. 13( a ), at time t6d, when the circulation process is started, if the storage amount of the liquid stored in the cooling tank Ct1 has reached the first temporary At the third storage amount Lv3 of the limit value, the output unit 9 transmits a third alarm, and is set to a state in which the execution of the loop processing is prohibited (processing prohibited state). Then, after the transmission of the third alarm by the output unit 9 and the processing prohibition state are released by the processing performed by the operator or the like, the execution of the loop processing is started.

Here, for example, by performing the processing of steps S71 to S75 in FIG. 13( b ), the operation of prohibiting the circulation processing according to the monitoring result of the storage amount of the cooling box Ct1 can be performed.

In step S71 , the control unit 10 determines whether or not it is time to start the loop processing based on the itinerary created by the scheduling unit. Here, the control unit 10 repeats the determination in step S71 until it is time to start the loop processing, and when it is time to start the loop processing, the process proceeds to step S72.

In step S72, the control part 10 determines by the detection part M4 whether the storage volume of the liquid stored in the cooling tank Ct1 has reached the third storage volume Lv3 which is the first threshold value. Here, if the storage amount of the liquid has not reached the third storage amount Lv3, the loop process is executed in step S75, and the process returns to step S71. On the other hand, when the storage amount of the liquid has reached the third storage amount Lv3, the process proceeds to step S73.

In step S73, the control part 10 makes the transmission of a 3rd alarm be performed through the output part 9.

In step S74, the control part 10 sets the process execution prohibition state in which the execution of the loop process is prohibited. At this time, for example, the control unit 10 may leave the plurality of substrates W in the cleaning processing unit without putting the substrates W into the chemical processing tank CB2 of the chemical processing unit 52 , for example. 51, etc., are areas in which a plurality of substrates W are difficult to change.

By adopting such a configuration, it is possible to deal with some kind of inconvenience caused by, for example, the liquid discharge portion EL1 including the cooling tank Ct1. Furthermore, for example, when some kind of failure occurs due to the liquid discharge portion EL1 including the detection portion M4 and the cooling tank Ct1, the execution of the circulation process is prohibited, so that the occurrence of failure in the etching process of the substrate W can be avoided.

<2. Summary of the first embodiment>

As described above, according to the substrate processing apparatus 100 of the first embodiment, for example, when the used phosphoric acid aqueous solution as the first processing liquid is discharged out of the substrate processing apparatus 100 from the chemical liquid processing tank CB2 as the processing section, the substrate is The pre-use phosphoric acid aqueous solution as the second treatment liquid having a relatively low dissolved concentration of components (eg, silicon) is mixed with the used phosphoric acid aqueous solution. Thereby, for example, in the route of discharging the phosphoric acid aqueous solution as the treatment liquid from the chemical treatment tank CB2 as the treatment section toward the outside of the substrate treatment apparatus 100, the eluted components from the substrate W in the phosphoric acid aqueous solution as the treatment liquid are crystallized ( For example, crystallization of siloxanes) will hardly occur.

<3. Modifications>

The present invention is not limited to the above-described first embodiment, and various changes, improvements, and the like can be made without departing from the gist of the present invention.

For example, in the above-described first embodiment, the time point at which the circulation process is performed and the process in which the liquid replenishing part AL1 replenishes the phosphoric acid aqueous solution before use as the second process liquid to the liquid discharge part EL1 (liquid replenishing process) may be performed. Various changes are made at the execution time point.

FIG. 14 is a timing chart of changes in execution time points of the circulation process and the liquid replenishment process. Fig. 14(a) is a timing chart showing the execution of the circulation process and the execution of the liquid replenishment process in the first embodiment. The liquid replenishment treatment includes liquid replenishment treatment of interval period liquid replenishment treatment and circulation treatment. FIGS. 14( b ) and 14 ( c ) are timing charts for the execution of the loop process and the execution of the liquid replenishment process in the first modification.

In the example of FIG. 14( a ), the control unit 10 does not perform the interval period liquid replenishment process while the circulation process is being performed, and in the interval period when the chemical solution treatment unit 52 does not perform the circulation process, every time the first Interval period liquid replenishment processing is performed at predetermined time P2.

In the example shown in FIGS. 14(b) and 14(c) , the control unit 10 does not perform the liquid replenishment process when the circulation process is executed, and performs the liquid replenishment process every time the first predetermined time P2 elapses regardless of whether the circulation process is executed or not. Fluid replenishment treatments during intervals. However, in this case, as shown in FIG. 14( c ), if the loop processing is being executed, even if the first predetermined time P2 has elapsed, the liquid replenishment processing during the interval will not be performed, and the liquid replenishment processing during the interval will not be carried out after the response loop processing. At the end, the interval liquid replenishment process is performed again.

FIG. 15 is a flowchart showing an example of the operation flow of the first modification of the execution timing of the circulation process and the liquid replenishment process. This operation flow is realized, for example, by the control unit 10 controlling the operation of each part of the substrate processing apparatus 100 .

Here, for example, the liquid replenishment process of the first modification is performed by performing the processes of steps S81 to S86 in FIG. 15 .

In step S81, the control part 10 starts the 1st count process which performs the count for measuring the elapse of the 1st predetermined time P2.

In step S82, the control part 10 determines whether the 1st predetermined time P2 has passed since the 1st count process was started. Here, the control part 10 repeats the determination of step S82 until the 1st predetermined time P2 elapses after the 1st count process starts, and when the 1st predetermined time P2 elapses, it progresses to step S83.

In step S83, the control part 10 determines whether the circulation process in the chemical|medical solution processing tank CB2 is being performed. Here, the control unit 10 repeats the determination of step S83 when the loop processing is being executed, and proceeds to step S84 when the loop processing is not being executed.

In step S84, the control part 10 starts the liquid replenishment process for the interval period performed by the liquid replenishment part AL1. At this time, for example, the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, whereby the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the processing liquid output portion Ex0.

In step S85, the control part 10 determines whether the replenishment amount of the phosphoric acid aqueous solution before the process from the liquid replenishment part AL1 to the liquid discharge part EL1 in the interval liquid replenishment process has reached a predetermined amount. Here, the control unit 10 repeats the process of step S85 until the replenishment amount reaches the predetermined amount, and when the replenishment amount reaches the predetermined amount, ends the interval period liquid replenishment process in step S86, and returns to step S81.

In addition, for example, in the above-mentioned first embodiment and the above-mentioned first modification example, as shown in FIG. 16, for example, the liquid discharge part EL1 in the chemical solution processing part 52 may be replaced by removing the liquid discharge part EL1 from the liquid discharge part EL1. The liquid discharge part EL1A of the cooling tank Ct1. In this case, for example, in the liquid discharge pipe portion Tg1, the phosphoric acid aqueous solution before use as the second treatment liquid replenished from the liquid replenishing portion AL1 is mixed with the phosphoric acid solution discharged from the chemical liquid treatment tank CB2 for use as the first treatment liquid. The phosphoric acid aqueous solution was completed, whereby a mixed solution (mixed phosphoric acid aqueous solution) was produced. In the example of FIG. 16, the 7th piping part Tb7, the 8th piping part Tb8, and the 9th piping part Tb9 are connected so that it may communicate directly.

In addition, for example, the present invention is not limited to a batch-type substrate processing apparatus like the substrate processing apparatus 100 of the first embodiment, and can be applied to each substrate W by discharging a processing liquid from a nozzle to the substrate W to process The substrate W is a so-called monolithic substrate processing apparatus that performs etching processing using a processing liquid. FIG. 17 is a diagram showing an example of the configuration of the chemical solution processing unit 52B in the single-wafer substrate processing apparatus. As shown in FIG. 17 , the chemical solution processing part 52B includes a liquid supply part SL2B, a chemical solution processing unit CP2, a liquid discharge part EL1B, and a liquid replenishing part AL1B.

The liquid supply unit SL2B can perform processing (liquid supply processing) of supplying, for example, an aqueous solution of phosphoric acid before use as a processing liquid that functions as an etching liquid to the chemical liquid processing unit CP2 as a processing section. The liquid supply part SL2B has, for example, a fourth piping part Tb4 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution sent from the processing liquid supply source En0 to the chemical solution processing unit CP2 via the fourth piping part Tb4. The 2nd flow control part Cf2 is provided in the 4th piping part Tb4. The second flow control unit Cf2 includes, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flowmeter that measures the flow rate of the phosphoric acid aqueous solution M2. In the liquid supply part SL2B, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 is supplied to the nozzle 50 of the chemical liquid processing unit CP2 at the flow rate set by the second flow control part Cf2 through the fourth piping part Tb4 .

The chemical solution processing unit CP2 is, for example, a portion (processing portion) that performs an etching process on the substrate W using, for example, an aqueous phosphoric acid solution that functions as an etching solution. The chemical solution processing unit CP2 has, for example, a holding portion 30 , a rotating mechanism 40 , and a nozzle 50 . The holding part 30 holds and rotates the substrate W in a substantially horizontal posture, for example. The holding portion 30 can be, for example, a vacuum chuck having an upper surface 30f capable of vacuum suction to the other main surface (also referred to as a lower surface) Bs1 opposite to the upper surface Us1 of the substrate W, or a vacuum chuck capable of holding the substrate W. A clamp-type collet, etc., of a plurality of collet pins on the peripheral edge. The rotation mechanism 40 rotates the holding portion 30 . For example, the rotation mechanism 40 can be configured to have a rotation support shaft 40s extending in the vertical direction to which the holding portion 30 is connected to the upper end, and a virtual rotation axis Ax1 that allows the rotation support shaft 40s to follow the vertical direction. It is 40m of rotational drive parts such as a motor that rotates at the center. Here, for example, the rotation support shaft 40s is rotated around the rotation axis Ax1 by the rotation drive part 40m, whereby the holding part 30 is rotated in a substantially horizontal plane. Thereby, the board|substrate W hold|maintained by the holding|maintenance part 30 is rotated centering on the rotation axis Ax1, for example. The nozzle 50 can discharge, for example, an aqueous phosphoric acid solution as a processing liquid toward the substrate W held by the holding portion 30 .

The liquid discharge part EL1B is, for example, a part that executes a process (liquid discharge process) as a process liquid (first process liquid) after being used in the etching process of the substrate W in the chemical liquid processing unit CP2 as a process part. The phosphoric acid aqueous solution (used phosphoric acid aqueous solution) is discharged from the chemical solution processing unit CP2 to the outside of the substrate processing apparatus. The liquid discharge part EL1B has, for example, a The liquid discharge pipe part Tg1 of the 8th piping part Tb8. The eighth piping portion Tb8 has, for example, a first end portion connected to communicate with the lower portion of the chemical solution processing unit CP2, and a second end portion connected for the purpose of communicating with the treatment solution output portion Ex0.

The liquid replenishing part AL1B can perform, for example, a process of replenishing the pre-use phosphoric acid aqueous solution as the second process liquid from the process liquid supply source En0 to the liquid discharge part EL1B (liquid replenishment process). Thereby, a phosphoric acid aqueous solution (also referred to as mixed phosphoric acid aqueous solution) as a mixed solution is produced by mixing the used phosphoric acid aqueous solution as the first treatment liquid and the pre-use phosphoric acid aqueous solution as the second treatment liquid. Here, since the dissolved concentration of the substrate component (such as silicon) in the phosphoric acid aqueous solution before use is lower than that in the used phosphoric acid aqueous solution, the dissolved concentration of the mixed phosphoric acid aqueous solution to become the substrate component (such as silicon) is higher than that of the used phosphoric acid aqueous solution. low state. Here, the liquid replenishment part AL1B has, for example, an eleventh piping part Tb11 as a liquid replenishment pipe part connected to the liquid discharge part EL1B. The eleventh piping portion Tb11 has, for example, a first end portion connected to the processing liquid supply source En0, and a second end portion connected for the purpose of communicating so as to merge with the eighth piping portion Tb8. The 11th piping part Tb11 is provided with the 3rd flow control part Cf3. The 3rd flow control part Cf3 has the 10th valve V10 which opens and closes the flow path of the 11th piping part Tb11, and the 3rd flowmeter M3 which measures the flow rate of the phosphoric acid aqueous solution, for example.

Moreover, for example, in the above-described first embodiment and each modification, the processing liquid supply source En0 for supplying the processing liquid to the second liquid supply part SL2 and the liquid supply part SL2B and the processing liquid supply source En0 for supplying the liquid replenishing part AL1 may be used. The treatment liquid supply source En0 of the second treatment liquid is set as a treatment liquid supply source of a different system. In this case, the processing liquid supplied to the second liquid supply part SL2 and the liquid supply part SL2B may be adjusted to contain, for example, a certain level of substrate components. By. Moreover, for example, in the adjustment tank SB1, the process liquid supplied to the 2nd liquid supply part SL2 may contain a certain level of a board|substrate component. In addition, from a different viewpoint, for example, the dissolved concentration of the substrate component of the second processing liquid supplied to the liquid replenishing part AL1 may be higher than that of the substrate component of the processing liquid supplied to the second liquid supply part SL2 and the liquid supply part SL2B. The dissolved concentration is lower.

Of course, all or a part of the above-described one embodiment and various modifications may be combined as appropriate and within a range that does not contradict each other.

10: Control Department

52: Chemical liquid processing department

AL1: Fluid Replenishment Department

B1a: 1st inner groove

B1b: 1st outer groove

B2a: 2nd inner groove

B2b: 2nd outer groove

CB1: Adjustment slot

CB2: liquid treatment tank

Cf1: 1st flow control section

Cf2: 2nd flow control section

Cf3: 3rd flow control section

CL1: The first liquid circulation section

CL2: Second Liquid Circulation Section

Ct1: Cooling box

EL1: Liquid discharge part

En0: Treatment liquid supply source

Ex0: Treatment liquid output part

Fl1: Filter

Ht1: 1st heater

Ht2: 2nd heater

LF2: Lift

M1: 1st flow meter

M2: 2nd flow meter

M3: 3rd flow meter

M4: Detection Department

Pm1: 1st pump

Pm2: 2nd pump

SL1: 1st liquid supply part

SL2: Second liquid supply part

Tb1~Tb11: 1st~11th piping section

Tg1: Liquid discharge pipe

V1~V10: Valves 1~10

W: substrate

Claims (14)

A substrate processing apparatus comprising: a processing part for performing etching processing on a substrate with a processing liquid; a liquid supply part having a liquid supply pipe part for supplying the processing liquid to the processing part; and a liquid discharge part having a liquid discharge pipe part for discharging the first processing liquid used in the above-mentioned processing part to perform the above-mentioned etching processing on the above-mentioned substrate from the above-mentioned processing part to the outside of the above-mentioned substrate processing apparatus; a liquid replenishing part, which is composed of A second treatment liquid having a lower dissolved concentration of the components of the substrate than the first treatment liquid is supplied to the liquid discharge portion to mix the first treatment liquid and the second treatment liquid to generate a mixed solution, and has a mixture connected to the a liquid replenishing pipe part of a liquid discharge part; and a control part that controls the supply of the treatment liquid by the liquid supply part to the treatment part and the second treatment liquid by the liquid replenishment part to the liquid discharge part The liquid supply unit supplies the second treatment liquid to the treatment section, the treatment section discharges the first treatment liquid to the liquid discharge section in response to the supply of the treatment liquid from the liquid supply section, and the control When the etching process is performed on the substrate by the process part, the process liquid by the liquid supply part is supplied to the process part twice or more, and the liquid replenishment part is made to supply the above-mentioned first 2. The two or more replenishment of the treatment liquid to the above-mentioned liquid discharge portion is performed synchronously. The substrate processing apparatus according to claim 1, wherein the control unit performs the etching process on the substrate by the processing unit Before, replenishment of the second treatment liquid by the liquid replenishing section toward the liquid discharge section is performed at least once, and when the etching treatment of the substrate is performed by the treatment section, the liquid supply section is The supplying of the processing liquid to the processing section and the replenishment of the second processing liquid to the liquid discharging section performed by the liquid replenishing section are performed. The substrate processing apparatus according to claim 1, wherein the liquid discharge portion further includes a cooling tank for cooling the first processing liquid, and the liquid discharge pipe portion includes a first portion connecting the processing portion and the cooling tank, and a second part connected to the cooling box for discharging the liquid to the outside of the substrate processing apparatus. The substrate processing apparatus according to claim 3, wherein the liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank, and the processing unit is based on the amount of the processing liquid from the liquid supply unit. The first processing liquid is supplied and discharged to the liquid discharge portion, and the control portion prohibits the processing of the substrate from being performed by the processing portion when the detection portion detects that the storage amount has reached a first threshold value. Execution of the above-described etching process. The substrate processing apparatus according to claim 1, wherein the control unit is executed after the etching process on the substrate by the processing unit is performed and before the etching process on the substrate performed by the processing unit next During the period until the execution, the replenishment of the second treatment liquid to the liquid discharge part by the liquid replenishing part is executed at a predetermined time point, The liquid discharge portion further includes a cooling tank for cooling the first treatment liquid, and the liquid discharge pipe portion includes a first portion that connects the treatment portion and the cooling tank, and is connected to the cooling tank for cooling the liquid. The second part in which the liquid is discharged outside the substrate processing apparatus, the liquid discharge part further includes a detection part for detecting the storage amount of the liquid stored in the cooling tank; When the storage amount reaches the second threshold value, the execution of the replenishment of the second treatment liquid to the liquid discharge section by the liquid replenishing section at the predetermined time point is prohibited. The substrate processing apparatus according to any one of claims 1 to 5, wherein the liquid replenishing unit dissolves the components constituting the substrate in the mixed solution by mixing the second processing liquid with the first processing liquid The concentration did not reach solubility. The substrate processing apparatus according to any one of claims 1 to 5, wherein the processing liquid includes an aqueous phosphoric acid solution, the substrate has a film of silicon nitride, and the etching treatment includes forming the film of silicon nitride with the aqueous phosphoric acid solution. dissolving process. A substrate processing method, which is a substrate processing method of a substrate processing apparatus, comprising: an etching step of performing etching processing on a substrate with a processing liquid in a processing unit; and a liquid supply step of applying a liquid supply pipe to the processing unit Supplying the above-mentioned treatment liquid; a liquid discharge step, which passes through a liquid discharge portion including a liquid discharge pipe portion to be The first treatment liquid used in the etching step is discharged from the treatment section to the outside of the substrate treatment apparatus; and a liquid replenishing step, wherein the dissolved concentration of the components constituting the substrate is lower than that of the first treatment through the liquid replenishing pipe section The second treatment liquid of the liquid is replenished to the liquid discharge part, whereby the first treatment liquid and the second treatment liquid are mixed to generate a mixed solution; in the liquid supply step, the treatment part is supplied through the liquid supply pipe part In the second treatment liquid, in the liquid discharge step, the treatment section discharges the first treatment liquid to the liquid discharge section in accordance with the supply of the treatment liquid in the liquid supply step, and performs the etching in the etching step At the time of treatment, the treatment liquid passing through the liquid supply pipe part in the liquid supply step is supplied to the treatment part two or more times, and the second treatment liquid passing through the liquid replenishment pipe part in the liquid replenishment step is supplied to the treatment part. Two or more replenishments of the liquid discharge portion are performed in synchronization. The substrate processing method according to claim 8, wherein, in the liquid discharging step, the first processing liquid is discharged from the liquid supplying step in response to the supply of the processing liquid to the processing section via the liquid supply pipe section in the liquid supplying step. The treatment part is discharged to the liquid discharge part, and before the etching process in the etching step, the replenishment of the second treatment liquid to the liquid discharge part through the liquid replenishment pipe part in the liquid replenishment step is performed at least once, in When performing the above-mentioned etching process in the above-mentioned etching step, the supply of the above-mentioned processing liquid to the above-mentioned processing portion through the above-mentioned liquid supply pipe portion in the above-mentioned liquid supply step is performed, and the above-mentioned second liquid replenishing step in the above-mentioned liquid replenishing pipe portion is performed. The processing liquid is replenished toward the above-mentioned liquid discharge part. The substrate processing method according to claim 8, wherein the liquid discharging step includes a first liquid discharging step of discharging the first processing liquid from the processing portion to a first portion included in the liquid discharging pipe portion, The liquid cooling step of cooling the first treatment liquid or the mixed solution included in the liquid discharge part and connected to the cooling tank of the first part; A second liquid discharge step that is connected to the second part of the cooling box and discharges the mixed solution to the outside of the substrate processing apparatus. The substrate processing method according to claim 10, further comprising a detection step of detecting the storage amount of the liquid stored in the cooling box, and in the liquid discharge step, the liquid supply is provided in response to the liquid supply step in the liquid supply step. The processing liquid of the pipe part is supplied to the processing part, and the first processing liquid is discharged from the processing part to the liquid discharge part, if it is detected in the detection step that the storage amount reaches the first threshold value In this case, the execution of the above-mentioned etching process of the above-mentioned etching step is prohibited. The substrate processing method according to claim 8, wherein the liquid replenishing step is performed at a predetermined time during the period after the etching process is performed in the etching step and until the etching process in the next etching step is performed. During the replenishment of the second treatment liquid toward the liquid discharge portion via the liquid replenishment pipe portion, the liquid discharge step includes: discharging the first treatment liquid from the treatment portion to the first treatment liquid included in the liquid discharge pipe portion. Part of the first liquid discharge step, the liquid cooling step of cooling the above-mentioned first treatment liquid or the above-mentioned mixed solution in a cooling tank included in the above-mentioned liquid discharge part and connected to the above-mentioned first part, and the above-mentioned cooling tank through The above-mentioned substrate processing method further includes a second liquid discharge step of discharging the mixed solution to the outside of the substrate processing apparatus by a second portion included in the liquid discharge pipe portion and connected to the cooling tank, wherein the substrate processing method further includes a In the detection step of detecting the storage amount of the liquid in the cooling tank, if it is detected that the storage amount reaches the second threshold value in the detection step, prohibiting the liquid replenishment step at the predetermined time point The second treatment liquid is replenished toward the liquid discharge portion via the liquid replenishment pipe portion. The substrate processing method according to any one of claims 8 to 12, wherein, in the liquid replenishing step, by mixing the second processing liquid with the first processing liquid, the mixed solution constitutes a part of the substrate. The dissolved concentrations of the ingredients did not reach solubility. The substrate processing method according to any one of Claims 8 to 12, wherein the processing liquid contains an aqueous phosphoric acid solution, the substrate has a film of silicon nitride, and in the etching step, the aqueous phosphoric acid solution causes the silicon nitride to be Membrane dissolves.

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