WO2020100558A1 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
WO2020100558A1
WO2020100558A1 PCT/JP2019/041968 JP2019041968W WO2020100558A1 WO 2020100558 A1 WO2020100558 A1 WO 2020100558A1 JP 2019041968 W JP2019041968 W JP 2019041968W WO 2020100558 A1 WO2020100558 A1 WO 2020100558A1
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WO
WIPO (PCT)
Prior art keywords
liquid
processing
unit
substrate
replenishment
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PCT/JP2019/041968
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French (fr)
Japanese (ja)
Inventor
浩彬 松井
真治 杉岡
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株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020100558A1 publication Critical patent/WO2020100558A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention is for a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an organic EL substrate, an FED (Field Emission Display) substrate, an optical display substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask.
  • the present invention relates to a technique for etching a substrate and a substrate such as a solar cell substrate with a treatment liquid.
  • a substrate processing apparatus that performs etching processing on a substrate by immersing the substrate in a processing liquid stored in a processing tank (for example, Patent Document 1).
  • a treatment etching treatment
  • a treatment liquid such as an aqueous solution of phosphoric acid (H 3 PO 4 ) (phosphoric acid aqueous solution).
  • a circulation line that circulates a treatment liquid having a pump, a heater, and a filter is provided in the treatment tank.
  • the concentration of the eluted component eluted from the substrate in the treatment liquid stored in the treatment tank may increase. Then, for example, the processing liquid having a high concentration of the eluted component is discharged to the outside of the substrate processing apparatus through the waste line.
  • the processing liquid used for the etching processing is sent from the processing tank to the cooling tank, and after being cooled in this cooling tank, the substrate is processed by the disposal line. It is discharged to the outside of the device.
  • the elution component of the substrate in the treatment liquid may be crystallized to cause a problem such as clogging of the waste line.
  • the silicon nitride film formed on the surface of the substrate is subjected to an etching treatment with a treatment liquid such as a phosphoric acid aqueous solution, it is eluted from the substrate according to the number of substrates to be treated and the etching treatment time. Silicon accumulates in the phosphoric acid aqueous solution. Then, the concentration of silicon (also referred to as the concentration of siloxane (SiO 2 component)) in the phosphoric acid aqueous solution becomes high.
  • a treatment liquid such as a phosphoric acid aqueous solution
  • the siloxane in the phosphoric acid aqueous solution is discharged in the disposal line. May crystallize and the waste line may be clogged.
  • Such a problem is not limited to a so-called batch type substrate processing apparatus in which a substrate is etched by immersing the substrate in the processing liquid stored in the processing tank, and the processing liquid is discharged from the nozzle onto the substrate for processing.
  • substrate processing apparatuses in general such as a so-called single-wafer type substrate processing apparatus that performs etching processing using a liquid on a substrate.
  • the present invention has been made in view of the above problems, and provides a substrate processing technique in which crystallization of an elution component from a substrate in a processing liquid does not easily occur in a path for discharging the processing liquid from a processing unit to the outside of the substrate processing apparatus.
  • the purpose is to
  • the substrate processing apparatus includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishment unit, and a control unit.
  • the processing unit performs etching processing on the substrate with a processing liquid.
  • the liquid supply unit has a liquid supply pipe unit that supplies the processing liquid to the processing unit.
  • the liquid discharge part has a liquid discharge pipe part for discharging the first processing liquid, which has been used for the etching process on the substrate in the processing part, from the processing part to the outside of the substrate processing apparatus.
  • the liquid replenishment unit replenishes the liquid discharge unit with a second treatment liquid in which the dissolved concentration of the constituents of the substrate is lower than that of the first treatment liquid, so that the first treatment liquid and the second treatment liquid And a liquid replenishment pipe part connected to the liquid discharge part for mixing to produce a mixed solution.
  • the control unit controls the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishment unit.
  • a substrate processing apparatus is the substrate processing apparatus according to the first aspect, wherein the liquid replenishing unit mixes the second processing liquid with the first processing liquid to form a mixed solution in the mixed solution.
  • the dissolved concentration of the component that constitutes the substrate is less than the solubility.
  • a substrate processing apparatus is the substrate processing apparatus according to the first or second aspect, wherein the processing liquid contains an aqueous phosphoric acid solution, and the substrate has a silicon nitride film,
  • the etching process includes a process of dissolving the silicon nitride film with the phosphoric acid aqueous solution.
  • the substrate processing apparatus is the substrate processing apparatus according to any one of the first to third aspects, and the liquid supply unit supplies the second processing liquid to the processing unit.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the processing unit responds to the supply of the processing liquid from the liquid supply unit.
  • the first processing liquid is discharged to the liquid discharge unit, and the control unit performs twice the processing liquid to the processing unit by the liquid supply unit when performing the etching process on the substrate by the processing unit.
  • the above-mentioned supply and the replenishment of the second treatment liquid to the liquid discharge portion by the liquid replenishment portion twice or more are executed in synchronization with each other.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the processing unit is responsive to the supply of the processing liquid from the liquid supply unit.
  • the first processing liquid is discharged to the liquid discharging unit
  • the control unit is configured to discharge the second processing liquid to the liquid discharging unit by the liquid replenishing unit before performing the etching process on the substrate by the processing unit.
  • Replenishing is performed at least once, and when the processing unit performs the etching process on the substrate, the liquid supply unit supplies the processing liquid to the processing unit and the liquid replenishing unit discharges the liquid. And replenishing the second processing liquid to the part.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the control unit performs the etching process on the substrate by the processing unit. After that, the liquid replenishing unit replenishes the second processing liquid to the liquid discharging unit at a predetermined timing until the etching process is performed on the substrate by the next processing unit.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the liquid discharge unit further includes a cooling tank that cools the first processing liquid.
  • the liquid discharge pipe part is connected to the first part connecting the processing part and the cooling tank, and the second part connected to the cooling tank for discharging the liquid to the outside of the substrate processing apparatus. Including a part and.
  • a substrate processing apparatus is the substrate processing apparatus according to the eighth aspect, wherein the liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank.
  • the processing unit discharges the first processing liquid to the liquid discharge unit in response to the supply of the processing liquid from the liquid supply unit, and the control unit causes the detection unit to store the first stored liquid in the first storage amount. When it is detected that the threshold value has been reached, execution of the etching process on the substrate by the processing unit is prohibited.
  • a substrate processing apparatus is the substrate processing apparatus according to the seventh aspect, wherein the liquid discharge section further includes a cooling tank for cooling the first processing liquid, and the liquid discharge pipe section includes A first portion connecting the processing unit and the cooling tank, and a second portion connected to the cooling tank for discharging the liquid to the outside of the substrate processing apparatus,
  • the liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank, and the control unit is configured such that the storage unit has reached the second threshold value by the detection unit. If detected, the execution of the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishment unit at the predetermined timing is prohibited.
  • the substrate processing method is a substrate processing method for a substrate processing apparatus, which has an etching process, a liquid supply process, a liquid discharge process, and a liquid replenishment process.
  • the etching process the substrate is etched with the processing liquid in the processing unit.
  • the processing liquid is supplied to the processing section via a liquid supply pipe section.
  • the liquid discharging step the first processing liquid used in the etching step is discharged from the processing section to the outside of the substrate processing apparatus through a liquid discharging section including a liquid discharging pipe section.
  • a second processing liquid having a dissolved concentration of a component forming the substrate lower than that of the first processing liquid is replenished to the liquid discharging portion via a liquid replenishing pipe portion, thereby the first liquid
  • the treatment liquid and the second treatment liquid are mixed to form a mixed solution.
  • a substrate processing method is the substrate processing method according to the eleventh aspect, wherein in the liquid replenishing step, the second processing liquid is mixed with the first processing liquid so that the mixed solution The dissolved concentration of the component that constitutes the substrate is less than the solubility.
  • a substrate processing method is the substrate processing method according to the eleventh or twelfth aspect, wherein the treatment liquid contains a phosphoric acid aqueous solution, and the substrate has a silicon nitride film.
  • the silicon nitride film is dissolved by the phosphoric acid aqueous solution.
  • a substrate processing method is the substrate processing method according to any one of the eleventh to thirteenth aspects, wherein in the liquid supply step, the processing unit is connected to the processing unit via the liquid supply pipe unit. A second processing liquid is supplied.
  • a substrate processing method is the substrate processing method according to any one of the eleventh to fourteenth aspects, wherein in the liquid discharging step, the processing section includes the processing liquid in the liquid supplying step.
  • the first processing liquid is discharged to the liquid discharge part according to the supply of the liquid, and when the etching process is performed in the etching process, the first processing liquid is supplied to the processing part via the liquid supply pipe part in the liquid supply process.
  • the supply of the treatment liquid two or more times and the replenishment of the second treatment liquid to the liquid discharge portion via the liquid replenishment pipe portion in the liquid replenishment step are performed twice or more in synchronization.
  • a substrate processing method is the substrate processing method according to any one of the eleventh to fifteenth aspects, wherein in the liquid discharge step, the liquid supply pipe section in the liquid supply step is used.
  • the first processing liquid is discharged from the processing unit to the liquid discharging unit, and the liquid in the liquid replenishing process is added before the etching process in the etching process.
  • the replenishment of the second treatment liquid to the liquid discharge portion via the replenishment pipe portion is performed at least once, and when the etching process is performed in the etching step, the second treatment liquid is inserted through the liquid supply pipe portion in the liquid supply step.
  • the supply of the processing liquid to the processing unit is performed, and the second processing liquid is replenished to the liquid discharging unit via the liquid replenishment pipe unit in the liquid replenishing step.
  • a substrate processing method is the substrate processing method according to any one of the eleventh to sixteenth aspects, which is performed after the etching treatment in the etching step is performed, During the period until the etching process is performed in the etching process, the second processing liquid is replenished to the liquid discharge portion via the liquid replenishment pipe portion in the liquid replenishment process at a predetermined timing.
  • a substrate processing method is the substrate processing method according to any one of the eleventh to seventeenth aspects, wherein the liquid discharging step discharges the first processing liquid from the processing unit.
  • a substrate processing method is the substrate processing method according to the eighteenth aspect, further comprising a detection step of detecting a storage amount of the liquid stored in the cooling tank, In the step, the first processing liquid is discharged from the processing part to the liquid discharge part in accordance with the supply of the processing liquid to the processing part via the liquid supply pipe part in the liquid supply process, and the detection is performed. If it is detected in the step that the storage amount has reached the first threshold value, execution of the etching process in the etching step is prohibited.
  • a substrate processing method is the substrate processing method according to the seventeenth aspect, wherein in the liquid discharging step, the first processing liquid is contained in the liquid discharging pipe portion from the processing portion.
  • the substrate processing method further includes a detection step of detecting a storage amount of the liquid stored in the cooling tank, and if it is detected that the storage amount reaches a second threshold value in the detection step.
  • the replenishment of the second processing liquid to the liquid discharge portion via the liquid replenishment pipe portion at the predetermined timing in the liquid replenishment step is prohibited.
  • the substrate processing apparatus for example, when the first processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus, It is possible to mix and discharge the second processing liquid having a relatively low dissolved concentration of the components forming the substrate. As a result, for example, crystallization of the components eluted from the substrate in the processing liquid does not easily occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
  • any of the substrate processing apparatus according to the second aspect and the substrate processing method according to the twelfth aspect for example, dissolution of components constituting the substrate in a mixed solution generated by mixing the second processing liquid with the first processing liquid
  • concentration to be less than the solubility
  • the substrate processing apparatus for example, when the first phosphoric acid aqueous solution is discharged from the processing unit to the outside of the substrate processing apparatus, the first phosphoric acid
  • the second phosphoric acid aqueous solution in which the dissolved concentration of silicon is relatively low can be mixed and discharged into the aqueous solution.
  • crystallization of siloxane is unlikely to occur in the path through which the phosphoric acid aqueous solution is discharged from the processing unit to the outside of the substrate processing apparatus.
  • the second processing liquid to be supplied to the processing unit is mixed with the first processing liquid in the liquid discharging unit. It can also be used for purposes.
  • the configuration between the liquid supply unit that supplies the second processing liquid to the processing unit and the liquid replenishment unit that replenishes the second processing liquid mixed with the first processing liquid in the liquid discharge unit It is possible to share some of them.
  • the configuration of the substrate processing apparatus can be simplified.
  • the processing liquid is supplied to the processing unit twice or more.
  • the dissolved concentrations of the components that make up the substrate in the mixed solution generated in the liquid discharge unit are likely to be uniform.
  • crystallization of the components eluted from the substrate in the processing liquid is less likely to occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
  • the second processing liquid is supplied to the liquid discharge portion at least once before the etching processing. This facilitates mixing of the first processing liquid discharged from the processing unit and the second processing liquid supplied from the liquid replenishing unit when performing the etching process. As a result, for example, crystallization of the components eluted from the substrate in the processing liquid does not easily occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
  • both the substrate processing apparatus according to the seventh aspect and the substrate processing method according to the seventeenth aspect for example, an interval period in which the etching process is not performed between two or more etching processes performed on the substrate by the processing unit.
  • the second processing liquid is replenished in the liquid discharge portion at a predetermined timing.
  • the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus. Crystallization of the components eluted from the substrate in the treatment liquid does not easily occur in the discharge route.
  • the processing unit supplies the processing liquid. Meanwhile, the etching process of the substrate that discharges the first processing liquid is not performed. Thereby, for example, when the substrate is subjected to the etching process, it is possible to suppress the occurrence of a defect caused by the etching process because the first processing liquid cannot be discharged from the processing unit to the liquid discharging unit.
  • any of the substrate processing apparatus for example, when a liquid having a second threshold value or more is stored in the cooling tank, the etching process is performed by the processing unit. In the period of the non-open interval, the replenishment of the second processing liquid to the liquid discharge part at a predetermined timing is not executed. Thereby, for example, when the substrate is subjected to the etching process after the interval period, it is possible to suppress the occurrence of a defect caused by the etching process because the first processing liquid cannot be discharged from the processing unit to the liquid discharging unit. ..
  • FIG. 1 is a plan view showing a schematic configuration of the substrate processing apparatus according to the first embodiment.
  • FIG. 2 is a block diagram showing a functional configuration of the substrate processing apparatus according to the first embodiment.
  • FIG. 3 is a diagram showing a schematic configuration of the chemical liquid processing section.
  • FIG. 4 is a flowchart showing an example of an operation flow related to etching processing.
  • FIG. 5 is a timing chart according to an example of the operation of the preprocessing.
  • FIG. 6 is a timing chart according to an example of the operation of this processing.
  • FIG. 7 is a flowchart showing an example of the operation flow of this processing.
  • FIG. 8 is a diagram for explaining the operation related to the interval liquid replenishing process.
  • FIG. 9 is a diagram for explaining the storage amount of the cooling tank to be monitored.
  • FIG. 9 is a diagram for explaining the storage amount of the cooling tank to be monitored.
  • FIG. 10 is a diagram for explaining the operation related to the interval liquid replenishment processing according to the monitoring result of the storage amount of the cooling tank.
  • FIG. 11 is a diagram for explaining the operation relating to the monitoring of the non-execution period of the interval liquid replenishing process.
  • FIG. 12 is a diagram for explaining the operation related to monitoring the execution time of the interval liquid replenishing process.
  • FIG. 13 is a diagram for explaining an operation related to prohibition of the cycle processing according to the monitoring result of the storage amount of the cooling tank.
  • FIG. 14 is a timing chart relating to variations in the execution timings of the cycle process and the liquid replenishment process.
  • FIG. 15 is a diagram showing an example of an operation flow according to the first modification of the execution timings of the cycle process and the liquid replenishment process.
  • FIG. 16 is a diagram showing a schematic configuration of a chemical liquid processing unit according to a modification.
  • FIG. 17 is a diagram showing an example of a configuration of a chemical liquid processing unit in a single-wafer type
  • FIG. 1 is a plan view showing an example of a schematic configuration of a substrate processing apparatus 100 according to the first embodiment.
  • FIG. 2 is a block diagram showing an example of a functional configuration of the substrate processing apparatus 100 according to the first embodiment.
  • the substrate processing apparatus 100 can perform, for example, chemical treatment, cleaning treatment, and drying treatment on the substrate W.
  • the substrate processing apparatus 100 includes, for example, an input unit 1, a first transfer unit 2, a second transfer unit 3, a drying processing unit 4, a first liquid processing unit 5, and a second liquid processing unit 6.
  • the payout unit 7, the input unit 8, the output unit 9, and the control unit 10 are provided.
  • the loading unit 1 is, for example, a unit for loading a plurality of unprocessed substrates W into the substrate processing apparatus 100 from outside the substrate processing apparatus 100.
  • the loading unit 1 has, for example, two mounting tables 11 each capable of mounting a cassette C1 in which a plurality of (for example, 25) unprocessed substrates W are stored.
  • the payout unit 7 is, for example, a unit for paying out a plurality of processed substrates W from the inside of the substrate processing apparatus 100 to the outside of the substrate processing apparatus 100.
  • the payout unit 7 is located, for example, so as to be adjacent to the charging unit 1.
  • the payout unit 7 has, for example, two mounting tables 71 on which the cassettes C1 can be respectively mounted. In the dispensing unit 7, a plurality of (for example, 25) processed substrates W can be delivered to the outside of the substrate processing apparatus 100 along with the cassette C1 while the plurality of processed substrates W are stored in the cassette C1. it can.
  • the first transfer unit 2 is present at a position along the input unit 1 and the payout unit 7, for example.
  • the first transfer unit 2 can take out, for example, all the substrates W stored in the cassette C1 placed in the loading unit 1 and transfer them to the second transfer unit 3.
  • the first transfer unit 2 receives the processed substrate W from the second transfer unit 3, and the processed substrate W with respect to the cassette C1 placed on the mounting table 71 of the payout unit 7. It can be conveyed and stored in the cassette C1.
  • the first transport unit 2 may be able to recognize the lot of substrates W for each cassette C1 and measure the number of substrates W stored in the cassette C1, for example.
  • the second transfer unit 3 can move along the longitudinal direction of the substrate processing apparatus 100, for example.
  • the drying processing unit 4, the first liquid processing unit 5, and the second liquid processing unit 6 are located in order from the side closer to the first transportation unit 2 along the moving direction of the second transportation unit 3.
  • the first liquid processing unit 5 is present at a position adjacent to the drying processing unit 4
  • the second liquid processing unit 6 is present at a position adjacent to the first liquid processing unit 5.
  • the drying processing unit 4 can store, for example, a plurality of substrates W in a low-pressure chamber to dry them.
  • the first liquid processing unit 5 includes, for example, a cleaning processing unit 51, a chemical liquid processing unit 52, and a sub transport unit 53.
  • the cleaning processing unit 51 can perform, for example, a process of cleaning the plurality of substrates W with pure water (also referred to as pure water cleaning process).
  • the chemical liquid processing unit 52 can perform processing (also referred to as chemical liquid processing) on a plurality of substrates W with a processing liquid containing a chemical liquid, for example.
  • the sub-transport unit 53 can transfer the substrate W to and from the second transport unit 3, and can move up and down in each of the cleaning processing unit 51 and the chemical liquid processing unit 52.
  • the second liquid processing unit 6 includes, for example, a cleaning processing unit 51, a chemical liquid processing unit 52, and a sub-transporting unit 53, like the first liquid processing unit 5.
  • the input unit 8 is located, for example, near the mounting table 11.
  • the input unit 8 is, for example, a portion where the operator can select or input various information.
  • the input unit 8 is composed of, for example, a touch panel.
  • the input unit 8 may include an operation unit including buttons that can perform various operations such as pressing, or may include a microphone that enables voice input.
  • the operator for example, operates the input unit 8 to specify, for each cassette C1 (lot), a recipe that is stored in advance in the storage unit of the control unit 10 and that defines a procedure for processing a substrate. be able to.
  • the output unit 9 is located near the mounting table 11, for example.
  • the output unit 9 is a unit that can output various kinds of information under the control of the control unit 10, for example.
  • the output unit 9 may include, for example, a display unit capable of visually outputting various information and a speaker capable of audibly outputting various information.
  • the various information may include, for example, information indicating various states of the substrate processing apparatus 100 and information indicating various alarms.
  • the operation of the substrate processing apparatus 100 having the above configuration is comprehensively controlled by the control unit 10 as shown in FIG. 2, for example.
  • the control unit 10 has, for example, a calculation unit, a memory, a storage unit, a timer, and the like.
  • An electric circuit such as a central processing unit (CPU) that functions as at least one processor is applied to the processing unit.
  • CPU central processing unit
  • an electric circuit such as a random access memory (RAM) that temporarily stores information is applied.
  • RAM random access memory
  • Various types of information temporarily obtained by various types of computations in the computing unit are appropriately stored in the memory or the like.
  • a non-volatile storage medium that stores various information such as a hard disk or a flash memory is applied.
  • Various programs such as a plurality of types of recipes and a schedule creation program and a processing program are stored in advance in this storage unit.
  • the arithmetic unit realizes various functional configurations for executing the overall control of the operation of the substrate processing apparatus 100 by the control unit 10 by reading and executing the program stored in the storage unit, for example. ..
  • the various functional configurations include, for example, a scheduling unit that creates a process schedule for a plurality of substrates W in the substrate processing apparatus 100, a process execution unit that performs a process on a plurality of substrates W according to the schedule, and the like.
  • the timer can measure various times, for example.
  • the timer may have a functional configuration realized by the arithmetic unit.
  • the control unit 10 may control the operation of each unit in the first liquid processing unit 5 and the second liquid processing unit 6 according to the measurement results from the various sensor units 52s of the chemical liquid processing unit 52, for example.
  • the sensor unit 52s includes, for example, a first flow meter M1, a second flow meter M2, a third flow meter M3, a detection unit M4, and the like, which will be described later.
  • FIG. 3 is a diagram showing a schematic configuration of the chemical liquid processing unit 52.
  • the chemical liquid processing unit 52 selectively immerses the silicon nitride film by immersing the substrate W on which the silicon oxide film and the silicon nitride film are formed in a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid. It is a wet etching processing apparatus that performs a process of dissolving (also referred to as an etching process).
  • the chemical liquid treatment unit 52 includes an adjustment tank CB1, a first liquid supply unit SL1, a first liquid circulation unit CL1, a chemical liquid treatment tank CB2, a second liquid supply unit SL2, and a second liquid circulation unit CL2. , A liquid discharge part EL1 and a liquid replenishment part AL1.
  • the adjusting tank CB1 is for adjusting, for example, the temperature of the phosphoric acid aqueous solution to be supplied to the chemical liquid processing tank CB2.
  • the adjusting tank CB1 includes a first inner tank B1a that stores a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid, and a first outer tank B1b that collects the phosphoric acid aqueous solution overflowing from the upper portion of the first inner tank B1a. It has a constructed double structure.
  • the first inner tank B1a is, for example, a member having a rectangular box shape in a plan view, which is formed of quartz or a fluororesin material having excellent corrosion resistance against a phosphoric acid aqueous solution.
  • the first outer tank B1b is made of, for example, the same material as that of the first inner tank B1a, and is positioned so as to surround the outer peripheral upper end portion of the first inner tank B1a.
  • the first liquid supply unit SL1 executes, for example, a process (also referred to as a first liquid supply process) of supplying a new processing liquid sent from the processing liquid supply source En0 to the adjustment tank CB1 via the first piping unit Tb1.
  • a process also referred to as a first liquid supply process
  • a new solution of a phosphoric acid aqueous solution also referred to as a pre-use phosphoric acid aqueous solution
  • the processing liquid supply source En0 is connected so as to communicate with the first end of the first piping portion Tb1.
  • the processing liquid supply source En0 is, for example, a pump or a gas directed from the tank storing the phosphoric acid aqueous solution installed inside or outside the substrate processing apparatus 100 at room temperature (for example, 25 ° C.) toward the first piping portion Tb1.
  • the phosphoric acid aqueous solution is pressure-fed.
  • the 1st piping part Tb1 is provided with the 1st flow control part Cf1.
  • the first flow rate control unit Cf1 has, for example, a first valve V1 that opens and closes the flow path of the first piping unit Tb1, and a first flow meter M1 that measures the flow rate of the phosphoric acid aqueous solution.
  • the 2nd end part of the 1st piping part Tb1 is connected so that it may connect with the 1st outer tank B1b of adjustment tank CB1, for example.
  • the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 passes through the first piping unit Tb1 and flows into the first outer tank B1b at the flow rate set by the first flow rate control unit Cf1. Supplied.
  • the first liquid circulation unit CL1 can perform, for example, a process (also referred to as a first liquid circulation process) of heating the phosphoric acid aqueous solution discharged from the adjusting tank CB1 and causing it to recirculate to the adjusting tank CB1 under pressure.
  • the first liquid circulation unit CL1 has, for example, a second piping unit Tb2 that connects the first outer tank B1b and the first inner tank B1a so as to communicate with each other.
  • the second piping part Tb2 is, for example, a first end connected to communicate with the bottom of the first outer tank B1b and a second end connected to communicate with the bottom of the first inner tank B1a. And a section.
  • a second valve V2, a first pump Pm1 and a first heater Ht1 are provided in this order from the upstream side in the second piping portion Tb2.
  • the second valve V2 opens and closes the flow path of the second piping portion Tb2.
  • the first pump Pm1 pumps the phosphoric acid aqueous solution pumped out from the first outer tank B1b through the second piping portion Tb2 toward the first inner tank B1a.
  • the first heater Ht1 heats the phosphoric acid aqueous solution flowing through the second pipe portion Tb2 to a predetermined temperature (for example, about 160 ° C.).
  • the first liquid circulation unit CL1 may include, for example, a third piping unit Tb3 that heats the phosphoric acid aqueous solution discharged from the first inner tank B1a and circulates it to the first inner tank B1a.
  • the third pipe portion Tb3 is provided between the first end portion connected to communicate with the first inner tank B1a and the second valve V2 of the second pipe portion Tb2 and the first pump Pm1. And a second end connected so as to communicate with the portion.
  • the third piping portion Tb3 is positioned so as to join the second piping portion Tb2.
  • a third valve V3 is provided in the third piping portion Tb3, and the third valve V3 opens and closes the flow path of the third piping portion Tb3.
  • the chemical liquid processing bath CB2 is a portion (also referred to as a processing unit) that performs etching processing on the substrate W with, for example, a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid. Similar to the adjustment bath CB1, for example, the chemical treatment bath CB2 stores a phosphoric acid aqueous solution as an etching solution and dips the substrate W in the phosphoric acid aqueous solution, and a second inner bath B2a from above the second inner bath B2a. It has a double structure composed of a second outer tank B2b for collecting the overflowed phosphoric acid aqueous solution.
  • the second inner tank B2a is, for example, a box-shaped member having a rectangular shape in plan view formed of quartz or a fluororesin material having excellent corrosion resistance to an aqueous phosphoric acid solution.
  • the total amount (capacity) of the liquid that can be stored in the chemical liquid processing tank CB2 is set to, for example, about 60 liters.
  • the second outer tank B2b is also made of the same material as the second inner tank B2a, and is positioned so as to surround the outer peripheral upper end of the second inner tank B2a. There is.
  • the chemical treatment tank CB2 is provided with a lifter LF2 for immersing the substrate W in the phosphoric acid aqueous solution stored in the chemical treatment tank CB2.
  • the lifter LF2 collectively includes, for example, a plurality of (for example, 50) substrates W arranged in parallel in a standing posture (a posture in which the normal line of the main surface of the substrate is along the horizontal direction) by three holding bars. Hold.
  • the lifter LF2 is provided so as to be able to move up and down along the vertical direction by an elevator mechanism (not shown).
  • the lifter LF2 has, for example, a processing position (a position shown in FIG.
  • the second liquid supply unit SL2 can execute, for example, a process (also referred to as a second liquid supply process) of supplying a pre-use phosphoric acid aqueous solution as a processing liquid functioning as an etching liquid to the chemical liquid processing tank CB2 as the processing unit. it can.
  • the second liquid supply unit SL2 has, for example, a fourth piping unit Tb4 as a liquid supply pipe unit, and supplies the phosphoric acid aqueous solution sent from the adjusting tank CB1 to the chemical liquid processing tank CB2 via the fourth piping unit Tb4. can do.
  • the fourth piping portion Tb4 is, for example, a first end portion connected to communicate with a portion of the second piping portion Tb2 between the first heater Ht1 and the adjustment tank CB1, and a second outer tank B2b. And a second end connected to communicate with.
  • the fourth piping portion Tb4 is a piping portion branched from the second piping portion Tb2.
  • the phosphoric acid aqueous solution is pressure-fed from the first end portion to the second end portion by the first pump Pm1.
  • the second flow rate control unit Cf2 is provided in the fourth piping unit Tb4.
  • the second flow rate control unit Cf2 includes, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter M2 that measures the flow rate of the phosphoric acid aqueous solution.
  • the phosphoric acid aqueous solution supplied from the adjustment tank CB1 is supplied to the second outer tank B2b at the flow rate set by the second flow rate control unit Cf2 through the fourth piping unit Tb4.
  • the second liquid circulation unit CL2 can execute, for example, a process (also referred to as a second liquid circulation process) of heating the phosphoric acid aqueous solution discharged from the chemical liquid treatment tank CB2 and causing the chemical liquid treatment tank CB2 to reflow under pressure.
  • the second liquid circulation unit CL2 has, for example, a fifth piping unit Tb5 that connects the second outer tank B2b and the second inner tank B2a so as to communicate with each other.
  • the fifth pipe portion Tb5 is connected to the bottom of the second outer tank B2b so as to communicate with the bottom thereof, and is connected to the bottom of the second inner tank B2a at the second end thereof. And a section.
  • the fifth pipe portion Tb5 is provided with a fifth valve V5, a second pump Pm2, a sixth valve V6, a second heater Ht2 and a filter Fl1 in this order from the upstream side.
  • the fifth valve V5 opens and closes the flow path of the fifth piping portion Tb5.
  • the second pump Pm2 pumps the phosphoric acid aqueous solution pumped out from the second outer tank B2b through the fifth pipe portion Tb5 toward the second inner tank B2a.
  • the sixth valve V6 opens and closes the flow path of the fifth piping portion Tb5.
  • the second heater Ht2 heats the phosphoric acid aqueous solution flowing through the fifth pipe portion Tb5 to a predetermined temperature (for example, about 160 ° C.).
  • the filter Fl1 is a filtration filter for removing foreign matters in the phosphoric acid aqueous solution flowing through the fifth pipe portion Tb5.
  • the second liquid circulation unit CL2 may include, for example, a sixth piping unit Tb6 that heats the phosphoric acid aqueous solution discharged from the second inner tank B2a and circulates it to the second inner tank B2a.
  • the sixth piping portion Tb6 includes a first end portion connected to communicate with the second inner tank B2a, a fifth valve V5 of the fifth piping portion Tb5, and a second pump. And a second end portion connected so as to communicate with a portion between Pm2 and Pm2.
  • a seventh valve V7 is provided in the sixth piping portion Tb6, and the seventh valve V7 opens and closes the flow path of the sixth piping portion Tb6.
  • the liquid discharge part EL1 is, for example, a phosphoric acid aqueous solution (also referred to as a used phosphoric acid aqueous solution used as a processing liquid (also referred to as a first processing liquid)) after being used for etching the substrate W in the chemical liquid processing bath CB2 serving as a processing part. (Also referred to as a phosphoric acid aqueous solution) is discharged from the chemical treatment tank CB2 to the outside of the substrate processing apparatus 100 (also referred to as a liquid discharge treatment).
  • a phosphoric acid aqueous solution also referred to as a used phosphoric acid aqueous solution used as a processing liquid (also referred to as a first processing liquid)
  • Also referred to as a phosphoric acid aqueous solution is discharged from the chemical treatment tank CB2 to the outside of the substrate processing apparatus 100 (also referred to as a liquid discharge treatment).
  • the used phosphoric acid aqueous solution has a higher concentration (also referred to as a dissolution concentration) in which the substrate component (for example, silicon) is dissolved than the phosphoric acid aqueous solution before use due to the etching treatment of the substrate W in the chemical solution treatment tank CB2.
  • the liquid discharge part EL1 has, for example, a seventh piping part Tb7, an eighth piping part Tb8, a cooling tank Ct1 and a ninth piping part Tb9.
  • the seventh piping portion Tb7, the eighth piping portion Tb8, and the ninth piping portion Tb9 are portions for discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 (both the liquid discharging pipe portion). It means Tg1.
  • the seventh piping portion Tb7 is connected to, for example, a first end portion of the fifth piping portion Tb5 that is connected to communicate with a portion between the second pump Pm2 and the sixth valve V6, and the cooling tank Ct1. A second end that is connected in communication.
  • the seventh piping portion Tb7 constitutes a portion (also referred to as a first portion) that connects the chemical liquid processing tank CB2 and the cooling tank Ct1 together with the fifth piping portion Tb5.
  • An eighth valve V8 is provided in the seventh piping portion Tb7. The eighth valve V8 opens and closes the flow path of the seventh piping portion Tb7.
  • the phosphoric acid aqueous solution discharged from the chemical solution processing tank CB2 is heated and pressure-fed again to the chemical solution processing tank CB2 (second liquid circulation It is possible to selectively execute the processing) and the processing of discharging the used phosphoric acid aqueous solution from the chemical processing tank CB2 to the outside of the substrate processing apparatus 100 via the cooling tank Ct1 (liquid discharging processing).
  • the eighth piping portion Tb8 is, for example, a first end portion that is connected to communicate with the upper portion of the second outer tank B2b of the chemical liquid processing tank CB2 and a second end that is connected to the cooling tank Ct1. And an end portion.
  • the eighth piping portion Tb8 constitutes a portion (also referred to as a first portion) that connects the chemical liquid processing tank CB2 and the cooling tank Ct1.
  • the eighth piping portion Tb8 for example, when the storage amount of the phosphoric acid aqueous solution stored in the second outer tank B2b of the chemical liquid processing tank CB2 increases too much, the phosphoric acid aqueous solution overflows from the second outer tank B2b.
  • the phosphoric acid aqueous solution can be caused to flow from the second outer tank B2b to the cooling tank Ct1 so as not to come out. Further, for example, when the storage amount of the phosphoric acid aqueous solution stored in the first outer tank B1b of the adjusting tank CB1 is excessively increased, the first outer tank B1b is prevented from overflowing the phosphoric acid aqueous solution.
  • a tenth pipe Tb10 capable of flowing the phosphoric acid aqueous solution from B1b to the cooling tank Ct1 may be provided.
  • the tenth pipe Tb10 communicates with the first end portion of the adjusting tank CB1 that is connected to communicate with the upper portion of the first outer tank B1b so as to join the eighth pipe portion Tb8. And a second end portion connected to each other.
  • the cooling tank Ct1 can store and cool the used phosphoric acid aqueous solution.
  • the cooling tank Ct1 is provided with a detection unit M4 for detecting the storage amount of the liquid stored in the cooling tank Ct1.
  • a liquid level gauge is applied to the detection unit M4.
  • the ninth piping portion Tb9 is connected to, for example, the cooling tank Ct1 and constitutes a portion (also referred to as a second portion) for discharging the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100.
  • the ninth piping portion Tb9 is, for example, a first end portion connected to the cooling tank Ct1 and a portion (also referred to as a treatment liquid output portion) Ex0 for outputting the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100. And a second end connected to.
  • the processing liquid output unit Ex0 is, for example, a tank (also called a recovery tank) that is detachable from the substrate processing apparatus 100 and that collects the phosphoric acid aqueous solution or a tank that drains the phosphoric acid aqueous solution (also called a drainage tank). Alternatively, a drainage pipe or the like for connecting to a treatment facility for factory wastewater is applied.
  • the ninth pipe portion Tb9 is provided with, for example, a ninth valve V9.
  • the ninth valve V9 can open and close the flow path of the ninth piping portion Tb9.
  • the output of the phosphoric acid aqueous solution from the cooling tank Ct1 to the processing liquid output unit Ex0 can be adjusted by the ninth valve V9.
  • the liquid replenishment unit AL1 performs, for example, a process (also referred to as a liquid replenishment process) of replenishing the pre-use phosphoric acid aqueous solution (also referred to as a second phosphoric acid aqueous solution) as the second treatment liquid from the treatment liquid supply source En0 to the liquid discharge unit EL1. Can be executed. Thereby, the used phosphoric acid aqueous solution as the first treatment liquid and the pre-use phosphoric acid aqueous solution as the second treatment liquid can be mixed to generate a phosphoric acid aqueous solution as a mixed solution (also referred to as a mixed phosphoric acid aqueous solution). ..
  • the phosphoric acid aqueous solution before use is in a state in which the dissolved concentration of the substrate component (for example, silicon) is lower than that of the used phosphoric acid aqueous solution. Therefore, the mixed phosphoric acid aqueous solution has a lower dissolved concentration of the substrate component (for example, silicon) than the used phosphoric acid aqueous solution.
  • the solution replenishment unit AL1 replenishes the solution discharge unit EL1 with the before-use phosphoric acid aqueous solution, so that the used phosphoric acid solution discharged in the liquid discharge unit EL1 is mixed phosphoric acid solution with a reduced concentration of the substrate components.
  • the liquid replenishment section AL1 has, for example, an eleventh piping section Tb11 as a liquid replenishment tube section connected to the liquid discharge section EL1.
  • the eleventh piping portion Tb11 includes, for example, a first end portion connected to the treatment liquid supply source En0 and a second end portion connected so as to communicate with the eighth piping portion Tb8 in such a manner as to join. Have.
  • the 11th piping part Tb11 is provided with the 3rd flow control part Cf3.
  • the third flow rate control unit Cf3 includes, for example, a tenth valve V10 that opens and closes the flow path of the eleventh piping unit Tb11, and a third flow meter M3 that measures the flow rate of the phosphoric acid aqueous solution.
  • each unit of the above-described chemical liquid processing unit 52 can be controlled by the control unit 10.
  • the first liquid supply unit SL1 supplies the pre-use phosphoric acid aqueous solution as the second processing liquid to the adjustment tank CB1 (first liquid supply process) and the first liquid circulation unit CL1.
  • a process of circulating the phosphoric acid aqueous solution (first liquid circulation process)
  • a second liquid circulation unit CL2 a second liquid circulation unit CL2.
  • Second liquid circulation process To circulate the phosphoric acid aqueous solution (second liquid circulation process), to discharge the spent phosphoric acid aqueous solution as the first processing liquid from the chemical liquid processing tank CB2 by the liquid discharge part EL1 (liquid discharge process), and a liquid replenishment part.
  • AL1 liquid discharge process
  • a densitometer provided along the inner wall of the second inner tank B2a detects the dissolved concentration of the specific substance of the substrate W eluted in the phosphoric acid aqueous solution stored in the second inner tank B2a
  • the control unit 10 may open and close the eighth valve V8 and the ninth valve V9 in accordance with the dissolved concentration as the detection result to appropriately send the used phosphoric acid aqueous solution to the processing liquid output unit Ex0.
  • the first processing liquid is used as the first processing liquid. It is possible to mix and discharge the used phosphoric acid aqueous solution before use as the second processing liquid in which the dissolved concentration of the substrate component (eg, silicon) is relatively low. Thereby, for example, even if the used phosphoric acid aqueous solution as the first processing liquid is cooled in the cooling tank Ct1, the phosphoric acid aqueous solution as the processing liquid is discharged from the chemical liquid processing tank CB2 as the processing unit to the outside of the substrate processing apparatus 100. In the route, crystallization of the components eluted from the substrate W in the phosphoric acid aqueous solution as the treatment liquid (for example, crystallization of siloxane) is unlikely to occur.
  • the substrate component eg, silicon
  • the solution replenishing unit AL1 generates a mixed phosphoric acid aqueous solution as a mixed solution, which is generated by mixing the used phosphoric acid aqueous solution as the second processing liquid with the used phosphoric acid aqueous solution as the first processing liquid. It may have a solubility concentration that is less than the solubility of the substrate component (eg, silicon). Such a design of the concentration can be realized based on, for example, a predicted value or an actually measured value of the dissolved concentration of the substrate component in the used phosphoric acid aqueous solution, and the mixing ratio of the first processing liquid and the second processing liquid.
  • the substrate component eg, silicon
  • FIG. 4 is a flowchart showing an example of an operation flow relating to the etching process of the substrate W in the substrate processing apparatus 100.
  • This operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100 according to the recipe designated by the operator.
  • a substrate W on which a silicon oxide film and a silicon nitride film are formed is immersed in a phosphoric acid aqueous solution as a processing liquid to perform an etching process of selectively dissolving the silicon nitride film with the phosphoric acid aqueous solution I will give you an explanation.
  • a pretreatment step S1
  • a main treatment step S2
  • a posttreatment step S3
  • a one-cycle process also called a cycle process
  • Pre-processing operation for example, before the plurality of substrates W are immersed in the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2, the phosphoric acid aqueous solution is suitable for etching treatment by supplying the phosphoric acid aqueous solution to the chemical liquid treatment bath CB2. Preparations are made so that the active state is achieved.
  • the bubbling treatment may be performed on the phosphoric acid aqueous solution stored in the chemical liquid treatment tank CB2 by a configuration in which bubbles (not shown) are introduced.
  • the second liquid supply unit SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2.
  • the chemical liquid processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in response to the supply of the before-use phosphoric acid aqueous solution from the second liquid supply part SL2.
  • the supply amount of the before-use phosphoric acid aqueous solution to the chemical liquid processing tank CB2 by the second liquid supply unit SL2 and the discharge amount of the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the liquid discharging unit EL1 are equal to each other.
  • the phosphoric acid aqueous solution does not overflow from the chemical solution treatment tank CB2.
  • the fifth piping portion Tb5 and the seventh piping portion Tb7 are moved from the chemical treatment tank CB2.
  • the used phosphoric acid aqueous solution may be discharged to the cooling tank Ct1 via the above, or the used phosphoric acid aqueous solution may be discharged to the cooling tank Ct1 from the chemical liquid treatment tank CB2 via the eighth pipe portion Tb8.
  • the liquid replenishing unit AL1 replenishes the liquid discharging unit EL1 with the before-use phosphoric acid aqueous solution, and mixes the used phosphoric acid aqueous solution with the before-use phosphoric acid aqueous solution at the liquid discharging unit EL1. Generate an aqueous solution.
  • the mixed phosphoric acid aqueous solution is generated in the cooling tank Ct1.
  • the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the treatment liquid output unit Ex0 via the ninth piping unit Tb9 by opening the flow path of the ninth piping unit Tb9 by the ninth valve V9, for example.
  • the liquid supply step includes, for example, a step of supplying the phosphoric acid aqueous solution to the chemical liquid treatment tank CB2 via the fourth pipe portion Tb4 as the liquid supply pipe portion.
  • the liquid discharging step includes, for example, a step of discharging the used phosphoric acid aqueous solution after being used in the etching step from the chemical solution processing bath CB2 to the outside of the substrate processing apparatus 100 via the liquid discharging pipe portion Tg1.
  • the chemical liquid processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in response to the supply of the before-use phosphoric acid aqueous solution through the fourth piping portion Tb4.
  • a pre-use phosphoric acid aqueous solution in which the dissolved concentration of the substrate component is lower than the used phosphoric acid aqueous solution is replenished to the liquid discharge part EL1 via the eleventh piping part Tb11 as a liquid replenishment pipe part
  • the treatment includes mixing the used phosphoric acid aqueous solution and the pre-use phosphoric acid aqueous solution to generate a mixed phosphoric acid aqueous solution as a mixed solution.
  • the phosphoric acid aqueous solution may be supplied once to the chemical liquid treatment tank CB2 via the fourth pipe portion Tb4,
  • the phosphoric acid aqueous solution may be supplied in multiple times.
  • the second liquid supply unit SL2 may supply the aqueous solution of phosphoric acid at least once to the chemical liquid treatment tank CB2 via the fourth piping unit Tb4.
  • the used phosphoric acid aqueous solution may be discharged once from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 via the liquid discharging pipe portion Tg1, or a plurality of used phosphoric acid aqueous solutions may be discharged. It may be discharged in batches.
  • the liquid discharging step for example, even if the used phosphoric acid aqueous solution is discharged at least once from the chemical liquid processing bath CB2 to the outside of the substrate processing apparatus 100 via the liquid discharging pipe portion Tg1 by the liquid discharging portion EL1. Good.
  • the liquid discharge part EL1 may be replenished with the before-use phosphoric acid aqueous solution once through the eleventh piping part Tb11, or the before-use phosphoric acid aqueous solution may be replenished in plural times.
  • the liquid replenishment unit AL1 may replenish the liquid discharge unit EL1 through the eleventh piping unit Tb11 with the pre-use phosphoric acid aqueous solution at least once.
  • FIG. 5 is a timing chart according to an example of the operation of preprocessing.
  • FIG. 5A shows a supply amount (also referred to as a liquid supply amount) of the before-use phosphoric acid aqueous solution (new liquid) from the second liquid supply unit SL2 to the chemical liquid treatment tank CB2 in the period P0 in which the pretreatment is performed.
  • the opening / closing state of the fourth valve V4 of the second liquid supply unit SL2 and the discharge amount of the used phosphoric acid aqueous solution from the chemical liquid treatment tank CB2 to the liquid discharge unit EL1 (also referred to as liquid discharge amount) with time.
  • a timing chart is shown.
  • FIG. 5B shows a replenishment amount (also referred to as a liquid replenishment amount) of the pre-use phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 and the tenth valve of the liquid replenishment unit AL1 in the pretreatment period P0.
  • a replenishment amount also referred to as a liquid replenishment amount
  • a timing chart regarding the opening / closing status of V10 and time change is shown.
  • the recipe defines, for example, the length of the pretreatment period P0, the liquid supply amount, and the liquid replenishment amount.
  • the liquid replenishment amount may be designated by, for example, 1 / N (N is an integer of 1 to 10) as a ratio to the liquid supply amount.
  • N is an integer of 1 to 10.
  • the recipe defines conditions such that the period P0 is 180 seconds, the liquid supply amount is 2 liters, and N is 2.
  • the pre-use phosphoric acid aqueous solution causes the chemical solution to become a chemical solution by opening the fourth valve V4. While being supplied to the processing tank CB2 at a flow rate of about Fr0 [ml / min], the used phosphoric acid aqueous solution is supplied from the chemical solution processing tank CB2 to the liquid discharge part EL1 at a flow rate of about Fr0 [ml / min].
  • the pre-use phosphoric acid aqueous solution (new solution) is flown at a flow rate of about Fr0 [ml / min] by opening the tenth valve V10. It is replenished in the liquid discharge part EL1.
  • Fr0 is set to, for example, 2000 ml / min.
  • the liquid replenishing unit AL1 may replenish the liquid discharging unit EL1 through the eleventh piping unit Tb11 with the pre-use phosphoric acid aqueous solution at least once.
  • the chemical process is performed in the etching process in the main process.
  • the used phosphoric acid aqueous solution discharged from the bath CB2 to the liquid discharge part EL1 and the before-use phosphoric acid aqueous solution replenished from the liquid replenishment part AL1 to the liquid discharge part EL1 are easily mixed.
  • crystallization of the components eluted from the substrate W in the used phosphoric acid aqueous solution does not easily occur in the path for discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100.
  • step S2 the plurality of substrates W are subjected to etching processing in the chemical liquid processing section 52.
  • the plurality of substrates W held by the lifter LF2 is immersed in the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2.
  • a step also referred to as an etching step of performing the etching process on the plurality of substrates W with the phosphoric acid aqueous solution is performed in the chemical liquid processing section 52.
  • the second liquid circulation process by the liquid discharge unit EL1, the liquid discharge process by the liquid discharge unit EL1, and the liquid supplement process by the liquid supplement unit AL1 are appropriately performed in parallel.
  • the second liquid supply unit SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2.
  • the chemical liquid processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in response to the supply of the before-use phosphoric acid aqueous solution from the second liquid supply part SL2.
  • the liquid replenishing unit AL1 replenishes the liquid discharging unit EL1 with the before-use phosphoric acid aqueous solution, and mixes the used phosphoric acid aqueous solution with the before-use phosphoric acid aqueous solution at the liquid discharging unit EL1. Generate an aqueous solution.
  • This mixed phosphoric acid aqueous solution is sent from the liquid discharge part EL1 to the processing liquid output part Ex0. Therefore, also in this process, the liquid supply process, the liquid discharge process, and the liquid replenishment process are performed as in the pretreatment.
  • the pre-use phosphoric acid aqueous solution is supplied to the chemical liquid treatment bath CB2 by the first liquid supply unit SL1 through the fourth pipe portion Tb4 in the liquid supply process.
  • the solution replenishing section AL1 replenishes the solution discharge section EL1 with the pre-use phosphoric acid aqueous solution through the eleventh piping section Tb11.
  • the dissolved concentration of silicon in the used phosphoric acid aqueous solution is relatively low. If the phosphoric acid aqueous solution before use is mixed and discharged, in the route for discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the outside of the substrate processing apparatus 100, siloxane as crystallization as a crystallization component of the elution component from the substrate W in the used phosphoric acid aqueous solution is discharged. Less likely to crystallize.
  • the chemical solution treatment tank CB2 is used to remove the substrate processing apparatus 100 In the route of discharging the used phosphoric acid aqueous solution to the outside, crystallization of siloxane as crystallization of the components eluted from the substrate W in the used phosphoric acid aqueous solution does not easily occur.
  • the chemical liquid is used. It can also be used for the purpose of mixing the used phosphoric acid aqueous solution to be supplied to the treatment tank CB2 with the used phosphoric acid aqueous solution in the liquid discharge part EL1.
  • the first liquid supply unit SL1 and the second liquid supply unit SL2 for supplying the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2, and the pre-use phosphoric acid aqueous solution mixed with the used phosphoric acid aqueous solution in the liquid discharge unit EL1.
  • At least a part of the configuration can be shared between the liquid replenishment unit AL1 for replenishment.
  • the treatment liquid supply unit En0 and the piping portion around it can be shared.
  • the configuration of the substrate processing apparatus 100 can be simplified.
  • the liquid discharging process includes a first liquid discharging process, a liquid cooling process, and a second liquid discharging process.
  • the first liquid discharging step for example, the used phosphoric acid aqueous solution is discharged from the chemical liquid treatment tank CB2 into at least one of the seventh pipe portion Tb7 and the eighth pipe portion Tb8 as the first portion included in the liquid discharge pipe portion Tg1.
  • Including the step of The liquid cooling step includes, for example, a step of cooling the used phosphoric acid aqueous solution or the mixed phosphoric acid aqueous solution in the cooling tank Ct1 included in the liquid discharge section EL1 and connected to the seventh piping section Tb7.
  • the mixed phosphoric acid aqueous solution is subjected to the substrate processing through the ninth piping portion Tb9 which is included in the liquid discharging pipe portion Tg1 from the cooling tank Ct1 and is connected to the cooling tank Ct1 as the second portion. It includes a step of discharging to the outside of the device 100. If such a configuration is adopted, for example, even if the used phosphoric acid aqueous solution is cooled in the cooling tank Ct1, the used phosphoric acid aqueous solution is discharged from the chemical solution treatment tank CB2 to the outside of the substrate processing apparatus 100 in the route. Crystallization of siloxane as crystallization of the component eluted from the substrate W in the aqueous solution is unlikely to occur.
  • step S2 for example, when the plurality of substrates W held in the lifter LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2 for a predetermined time, the lifter Due to the rise of LF2, the plurality of substrates W held by the lifter LF2 are pulled up from the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2.
  • the etching processing may be sequentially performed on the plurality of groups of substrates W each configured by the plurality of substrates W.
  • the plurality of substrates W are sequentially immersed in the phosphoric acid aqueous solution stored in the chemical treatment bath CB2.
  • the process of pulling up the plurality of substrates W from the phosphoric acid aqueous solution is repeatedly performed.
  • the plurality of substrates W pulled up from the phosphoric acid aqueous solution stored in the chemical liquid processing tank CB2 are cleaned with pure water in a cleaning processing unit 51 adjacent to the chemical liquid processing unit 52, for example.
  • a phosphoric acid aqueous solution of about 50 to 100% of the capacity of the chemical treatment tank CB2 may be replaced.
  • the chemical liquid via the fourth pipe portion Tb4 by the second liquid supply unit SL2 in the liquid supply process is used.
  • the discharge of the aqueous solution and the supply of the pre-use phosphoric acid aqueous solution from the liquid replenishing unit AL1 to the liquid discharging unit EL1 may be divided into M times defined by the division number M, and may be executed in synchronization with each other. ..
  • the state of the phosphoric acid aqueous solution stored in the chemical liquid treatment tank CB2 tends to become substantially uniform over time. Then, for example, the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution generated in the liquid discharge part EL1 is likely to be uniform. As a result, for example, crystallization of the component eluted from the substrate W (crystallization of siloxane) in the used phosphoric acid aqueous solution is less likely to occur in the route of discharging the used phosphoric acid aqueous solution from the chemical treatment bath CB2 to the outside of the substrate processing apparatus 100.
  • FIG. 6 is a timing chart according to an example of the operation of this processing.
  • FIG. 6A shows the supply amount (liquid supply amount) of the before-use phosphoric acid aqueous solution (new liquid) from the second liquid supply unit SL2 to the chemical liquid processing tank CB2 during the period P1 in which this processing is executed,
  • a timing chart showing changes over time in the opening / closing state of the fourth valve V4 of the two-liquid supply unit SL2 and the discharge amount (liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the liquid discharge unit EL1 is shown. Has been done.
  • FIG. 6A shows the supply amount (liquid supply amount) of the before-use phosphoric acid aqueous solution (new liquid) from the second liquid supply unit SL2 to the chemical liquid processing tank CB2 during the period P1 in which this processing is executed
  • a timing chart showing changes over time in the opening / closing state of the fourth valve V4 of the two-liquid supply unit SL2 and
  • FIG. 6B shows the replenishment amount of the pre-use phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 (liquid replenishment amount) and the tenth valve V10 of the liquid replenishment unit AL1 in the period P1 of the main processing.
  • a timing chart regarding the open / close state and the change over time.
  • the recipe defines, for example, the length of the period P1 of the main processing, the liquid supply amount, the liquid replenishment amount, and the division number M.
  • the liquid replenishment amount may be designated by, for example, 1 / N (N is an integer of 1 to 10) as a ratio to the liquid supply amount.
  • N is an integer of 1 to 10.
  • the liquid discharge amount is 50 liters
  • Liter / 10 50 liter / M)
  • the pre-use phosphoric acid aqueous solution (new solution) is treated with the chemical solution by opening the fourth valve V4. While being supplied to the tank CB2 at a flow rate of about Fr1 [ml / min], the used phosphoric acid aqueous solution is supplied from the chemical solution processing tank CB2 to the solution discharge part EL1 at a flow rate of about Fr1 [ml / min].
  • the pre-use phosphoric acid aqueous solution (new solution) is about Fr1 [ml / min] by opening the tenth valve V10. Is replenished to the liquid discharge part EL1 at a flow rate of. Fr1 is set to, for example, 800 ml / min.
  • FIG. 7 is a flowchart showing an example of an operation flow related to this processing.
  • the operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • the control unit 10 recognizes the recipe designated by the operator for the plurality of substrates W to be processed.
  • the control unit 10 supplies the pre-use phosphoric acid aqueous solution from the second liquid supply unit SL2 to the chemical liquid processing tank CB2 when performing the etching process in the main process in the recipe recognized in step S21, and the chemical liquid.
  • step S23 when the etching process in the main process is performed, the supply of the pre-use phosphoric acid aqueous solution from the second liquid supply unit SL2 to the chemical solution processing tank CB2 and the chemical solution processing tank
  • the discharge of the used phosphoric acid aqueous solution from the CB2 to the liquid discharge part EL1 and the replenishment of the before-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 are separately performed.
  • step S24 the pre-use phosphoric acid aqueous solution is supplied from the second solution supply unit SL2 to the chemical solution processing tank CB2 and the chemical solution processing tank CB2 when the etching processing in this processing is executed.
  • the discharge of the used phosphoric acid aqueous solution from the liquid discharge part EL1 to the liquid discharge part EL1 and the replenishment of the pre-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 are performed without division.
  • step S3 for example, after the main treatment (step S2) is completed, preparation for the execution of the next cycle treatment is performed by supplying the phosphoric acid aqueous solution to the chemical liquid treatment tank CB2.
  • Interval liquid replenishment process In the substrate processing apparatus 100 according to the present embodiment, for example, after the control unit 10 performs the etching process on the substrate W by the chemical liquid processing bath CB2 in the etching process, the control unit 10 uses the chemical liquid processing bath CB2 in the next etching process. During the interval period until the etching process is performed on the substrate W, the pre-use phosphoric acid aqueous solution is replenished to the liquid discharge part EL1 through the eleventh piping part Tb11 by the liquid replenishment part AL1 in the liquid replenishment step at a predetermined timing. You may let me.
  • the predetermined timing may be, for example, the timing at which the first predetermined time P2 is counted by the timer, which is one of the functions of the control unit 10.
  • the substrate processing apparatus 100 is set to the automatic operation state at the timing when the etching process in the chemical solution processing unit 52 is finished and the etching process in the chemical solution processing unit 52 is not executed.
  • the timing at which the chemical liquid processing unit 52 is set to the standby state such as the timing when the interval liquid replenishment processing is completed, or the like may be considered.
  • the first predetermined time period P2 can be set to an arbitrary time period of about 1 to 48 hours, for example, according to an input made by the operator via the input unit 8.
  • the replenishment amount of the before-use phosphoric acid aqueous solution to the liquid discharge part EL1 by the liquid replenishment part AL1 at a predetermined timing is, for example, 1 / n (where n is about 5 to 50 liters) of the capacity of the cooling tank Ct1.
  • a predetermined amount that is multiplied by an integer of 1 to 10) is possible.
  • FIG. 8 is a diagram for explaining the operation related to the interval liquid replenishing process.
  • FIG. 8A shows an example of a timing chart relating to the interval liquid replenishing process
  • FIG. 8B shows a flowchart relating to an example of the operation flow of the interval liquid replenishing process.
  • the operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • the interval liquid replenishment process may be executed every time the first predetermined time P2 elapses in the interval period.
  • the interval liquid replenishment process in the interval period can be executed by performing the processes of steps S41 to S47 of FIG. 8B.
  • step S41 the control unit 10 determines whether the chemical liquid processing unit 52 is in a standby state.
  • the determination in step S41 is repeated until the chemical liquid processing unit 52 enters the standby state, and when the chemical liquid processing unit 52 enters the standby state, the process proceeds to step S42.
  • step S42 the control unit 10 starts a process (also referred to as a first count process) for counting to measure the elapse of the first predetermined time P2.
  • step S43 the control unit 10 determines whether the chemical liquid processing unit 52 has started a cycle process including pre-processing, main processing, and post-processing. If the cycle process has started, the process returns to step S41. On the other hand, if the cycle process has not been started, the process proceeds to step S44.
  • step S44 the control unit 10 determines whether or not the first predetermined time P2 has elapsed since the first counting process was started. Here, if the first predetermined time P2 has not elapsed since the start of the first counting process, the process returns to step S43. On the other hand, if the first predetermined time P2 has elapsed since the first counting process was started, the process proceeds to step S45.
  • step S45 the control unit 10 starts the interval liquid replenishment process by the liquid replenishment unit AL1.
  • the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, so that the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the treatment liquid output portion Ex0.
  • step S46 the control unit 10 determines whether or not the replenishment amount of the untreated phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 in the interval liquid replenishment process has reached a predetermined amount.
  • the control unit 10 repeats the determination of step S46 until the replenishment amount reaches the predetermined amount.
  • the interval liquid replenishment process is ended in step S47, and the process returns to step S42. ..
  • FIG. 9 is a diagram for explaining the storage amount to be monitored in the cooling tank Ct1.
  • the detection unit M4 can monitor the storage amount in the cooling tank Ct1 in four stages (first to fourth storage amounts Lv1 to Lv4).
  • a process also referred to as a detection process
  • the first storage amount Lv1 is the upper limit level
  • the second storage amount Lv2 is the fixed amount level
  • the third storage amount Lv3 is the input impossibility level as the first threshold value
  • the fourth storage amount is the refill impossible level as the second threshold value.
  • the third storage amount Lv3 and the fourth storage amount Lv4 may be different or the same, for example.
  • the detection unit M4 detects that the storage amount of the liquid stored in the cooling tank Ct1 has reached the fourth storage amount Lv4 as the second threshold value. For example, execution of the interval liquid replenishment process may be prohibited. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6. If such a configuration is adopted, for example, if the cooling tank Ct1 stores a liquid having a fourth storage amount Lv4 or more as a second threshold value, the interval of the interval in which the etching process by the chemical liquid processing tank CB2 is not performed. During the period, the pre-use phosphoric acid aqueous solution is not replenished to the liquid discharge part EL1 at a predetermined timing.
  • FIG. 10 is a diagram for explaining the operation related to the interval liquid replenishing process according to the monitoring result of the storage amount of the cooling tank Ct1.
  • FIG. 10A shows an example of a timing chart relating to the interval liquid replenishment processing according to the monitoring result of the storage amount of the cooling tank Ct1
  • FIG. 10B shows the timing chart of the monitoring result of the storage amount of the cooling tank Ct1.
  • movement flow of the interval liquid replenishment process which was shown is shown.
  • the operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • the interval liquid replenishing process is usually executed every time the first predetermined time P2 elapses in the interval period, but is stored in the cooling tank Ct1 at the time t3b. Since the stored amount of the stored liquid has reached the fourth stored amount Lv4 as the second threshold value, the first count process for measuring the passage of the first predetermined time P2 is performed without performing the interval liquid replenishment process. A mode that is performed from the beginning can be considered.
  • step S44b of FIG. 10B the control unit 10 determines whether or not the storage amount of the liquid stored in the cooling tank Ct1 by the detection unit M4 has reached the fourth storage amount Lv4 as the second threshold value. judge.
  • the control unit 10 determines whether or not the storage amount of the liquid stored in the cooling tank Ct1 by the detection unit M4 has reached the fourth storage amount Lv4 as the second threshold value. judge.
  • the process returns to step S42.
  • the stored amount of the liquid has not reached the fourth stored amount Lv4, the process proceeds to step S45.
  • the used phosphoric acid aqueous solution can be discharged from the chemical liquid processing tank CB2 to the liquid discharge part EL1. Instead, it is possible to suppress the occurrence of defects caused by the etching process.
  • the control unit 10 causes the output unit 9 to issue the first alarm in response to the second predetermined time P3 during which the interval liquid replenishing process is not executed in the interval period. May be.
  • the second predetermined time P3 is set, for example, to a predetermined multiple of the first predetermined time P2 (for example, 2 to 5 times).
  • the display of a predetermined warning screen and the output of a warning sound are applied to the first alarm. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6.
  • FIG. 11 is a diagram for explaining an operation regarding monitoring during a period (also referred to as a non-execution period) during which the interval liquid replenishing process is not executed.
  • FIG. 11A shows an example of a timing chart relating to the monitoring operation during the non-execution period of the interval liquid replenishing process
  • FIG. 11B shows the operation flow of the monitoring operation during the non-execution period of the interval liquid replenishing process.
  • 3 shows a flowchart according to an example. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • a mode in which the output unit 9 issues the first alarm in response to the non-execution period of the interval liquid replenishment process reaching the second predetermined time P3 is considered. Be done.
  • the monitoring operation of the non-execution period of the interval liquid replenishment process can be executed in the interval period.
  • step S51 the control unit 10 determines whether the chemical liquid processing unit 52 is in a standby state.
  • the control unit 10 repeats the determination of step S51 until the chemical liquid processing unit 52 enters the standby state, and when the chemical liquid processing unit 52 enters the standby state, the process proceeds to step S52.
  • step S52 the control unit 10 starts a process (also referred to as a second count process) for counting to measure the elapse of the second predetermined time P3.
  • a process also referred to as a second count process
  • step S53 the control unit 10 determines whether or not a process including replenishment of the pre-use phosphoric acid aqueous solution to the liquid discharge unit EL1 by the liquid replenishment unit AL1 (also referred to as a liquid replenishment containing process) is executed.
  • the liquid replenishment-containing treatment includes, for example, a cycle treatment including a pretreatment, a main treatment and a post treatment, and an interval liquid replenishment treatment.
  • the process proceeds to step S57, and if the liquid replenishment containing process is completed, the process returns to step S51.
  • the liquid replenishment containing process has not been executed, the process proceeds to step S54.
  • step S54 the control unit 10 determines whether or not the second predetermined time P3 has elapsed since the second counting process was started. Here, if the second predetermined time P3 has not elapsed since the second counting process was started, the process returns to step S53. On the other hand, if the second predetermined time P3 has elapsed since the second counting process was started, the process proceeds to step S55.
  • step S55 the control unit 10 causes the output unit 9 to issue the first alarm.
  • step S56 the control unit 10 sets a state in which execution of the interval liquid replenishment process and cycle process is prohibited (also referred to as a process prohibition state). At this time, for example, the control unit 10 does not put the plurality of substrates W into the chemical liquid processing bath CB2 of the chemical liquid processing unit 52, and keeps them in an area where changes are unlikely to occur in the plurality of substrates W such as the cleaning processing unit 51. Embodiments are possible.
  • the control unit 10 causes the output unit 9 to perform the second operation in response to the fact that the time during which the interval liquid replenishing process is being executed (also referred to as the execution time) has reached the third predetermined time P4 in the interval period.
  • An alarm may be issued.
  • the third predetermined time P4 is set to, for example, about 110 to 150% of the normally assumed time (also called the required time) required for the interval liquid replenishing process.
  • the display of a predetermined warning screen and the output of a warning sound are applied to the second alarm. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6.
  • FIG. 12 is a diagram for explaining the operation of monitoring the execution time of the interval liquid replenishment process.
  • FIG. 12A shows an example of a timing chart related to the operation of monitoring the execution time of the interval liquid replenishing process
  • FIG. 12B shows an example of the operation flow of the operation of monitoring the execution time of the interval liquid replenishing process.
  • the related flowchart is shown.
  • the operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • the operation of monitoring the execution time of the interval liquid replenishing process can be executed by performing the processes of steps S61 to S66 of FIG. 12B.
  • step S61 the control unit 10 determines whether or not the interval replenishment process is started by the liquid replenishment unit AL1. Here, the determination in step S61 is repeated until the interval liquid replenishing process is started, and when the interval liquid replenishing process is started, the process proceeds to step S62.
  • step S62 the control unit 10 starts a process (also referred to as a third count process) for counting to measure the elapse of the third predetermined time P4.
  • step S63 the control unit 10 determines whether or not the interval liquid replenishment process has been completed. If the interval liquid replenishing process has not been completed, the process proceeds to step S64. On the other hand, when the interval liquid replenishing process is completed, the process returns to step S61.
  • step S64 the control unit 10 determines whether or not the third predetermined time P4 has elapsed since the third counting process was started. Here, if the third predetermined time P4 has not elapsed since the third counting process was started, the process returns to step S63. On the other hand, if the third predetermined time P4 has elapsed since the third counting process was started, the process proceeds to step S65.
  • step S65 the control unit 10 causes the output unit 9 to issue the second alarm.
  • step S66 the control unit 10 sets a state in which execution of the interval liquid replenishment process and the cycle process is prohibited (process prohibited state). At this time, for example, the control unit 10 does not put the plurality of substrates W into the chemical liquid processing bath CB2 of the chemical liquid processing unit 52, and keeps the plurality of substrates W in an area where it is difficult to cause a change in the plurality of substrates W such as the cleaning processing unit 51. A mode of putting it is possible.
  • the detection unit M4 detects that the storage amount of the liquid stored in the cooling tank Ct1 has reached the third storage amount Lv3 as the first threshold value. For example, execution of the etching process on the substrate W by the chemical liquid processing bath CB2 may be prohibited. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6. If such a configuration is adopted, for example, when the substrate W is subjected to the etching process, the used phosphoric acid aqueous solution cannot be discharged from the chemical solution processing tank CB2 to the liquid discharge part EL1, and a problem occurs due to the etching process. Can be suppressed.
  • FIG. 13 is a diagram for explaining an operation related to prohibition of cycle processing according to the monitoring result of the storage amount of the cooling tank Ct1.
  • FIG. 13A shows an example of a timing chart relating to prohibition of the cycle processing according to the monitoring result of the storage amount of the cooling tank Ct1
  • FIG. 13B shows the timing chart relating to the monitoring result of the storage amount of the cooling tank Ct1.
  • the flowchart which concerns on an example of the operation
  • the operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • the storage amount of the liquid stored in the cooling tank Ct1 reaches the third storage amount Lv3 as the first threshold value. If so, a mode in which the output unit 9 issues the third alarm and is set to the state in which the execution of the cycle processing is prohibited (processing prohibited state) can be considered. Then, after the output unit 9 has issued the third alarm and the processing prohibition state has been resolved by the operator or the like, execution of the cycle processing is started.
  • step S71 the control unit 10 determines, based on the schedule created by the scheduling unit, whether it is the timing to start the cycle processing.
  • the control unit 10 repeats the determination of step S71 until the timing to start the cycle processing, and when it comes to the timing to start the cycle processing, proceeds to step S72.
  • step S72 the control unit 10 determines whether or not the storage amount of the liquid stored in the cooling tank Ct1 by the detection unit M4 has reached the third storage amount Lv3 as the first threshold value.
  • the cycle process is executed in step S75, and the process returns to step S71.
  • the stored amount of the liquid reaches the third stored amount Lv3, the process proceeds to step S73.
  • step S73 the control unit 10 causes the output unit 9 to issue the third alarm.
  • step S74 the control unit 10 sets the process execution prohibited state in which the execution of the cycle process is prohibited. At this time, for example, the control unit 10 does not put the plurality of substrates W in the chemical liquid processing bath CB2 of the chemical liquid processing unit 52, and keeps the plurality of substrates W in an area in which the plurality of substrates W hardly change, such as the cleaning processing unit 51. Embodiments are possible.
  • the used phosphoric acid aqueous solution as the first processing liquid is discharged to the outside of the substrate processing apparatus 100 from the chemical liquid processing tank CB2 as the processing unit.
  • the used phosphoric acid aqueous solution is mixed with the pre-use phosphoric acid aqueous solution as the second processing liquid in which the dissolved concentration of the substrate component (for example, silicon) is relatively low.
  • FIG. 14 is a timing chart related to variations in the execution timings of the cycle process and the liquid replenishment process.
  • FIG. 14A is a timing chart regarding the execution of the cycle process and the liquid replenishment process according to the first embodiment.
  • the liquid replenishing process includes an interval liquid replenishing process and a liquid replenishing process in a cycle process.
  • FIGS. 14B and 14C are timing charts regarding the execution of the cycle process and the liquid replenishment process according to the first modification.
  • control unit 10 does not perform the interval liquid replenishment process while the cycle process is being performed, and the first predetermined period during the interval period when the chemical liquid process unit 52 is not performing the cycle process. Every time the time P2 elapses, the interval liquid replenishing process is performed.
  • the liquid replenishment process is not performed by the control unit 10 while the cycle process is being performed, and the first predetermined time is set regardless of whether or not the cycle process is performed. Every time P2 elapses, the interval liquid replenishing process is performed. However, in this case, as shown in FIG. 14C, if the cycle process is being executed, the interval liquid replenishment process is not performed even if the first predetermined time P2 has elapsed, and the cycle process ends. In response to, the interval liquid replenishment process may be executed.
  • FIG. 15 is a flowchart showing an example of an operation flow according to the first modification of the execution timings of the cycle process and the liquid replenishment process.
  • the operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
  • liquid replenishing process according to the first modification is executed by performing the processes of steps S81 to S86 of FIG.
  • step S81 the control unit 10 starts the first counting process for counting to measure the elapse of the first predetermined time P2.
  • step S82 the control unit 10 determines whether or not the first predetermined time P2 has elapsed since the first counting process was started.
  • the control unit 10 repeats the determination in step S82 until the first predetermined time P2 elapses after the first counting process is started, and when the first predetermined time P2 elapses, the process proceeds to step S83.
  • step S83 the control unit 10 determines whether or not the cycle processing in the chemical liquid processing tank CB2 is being executed. Here, if the cycle process is being executed, the control unit 10 repeats the determination of step S83, and if the cycle process is not being executed, the process proceeds to step S84.
  • step S84 the control unit 10 causes the liquid replenishment unit AL1 to start the interval liquid replenishment process.
  • the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, so that the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the treatment liquid output portion Ex0.
  • step S85 the control unit 10 determines whether or not the replenishment amount of the untreated phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 in the interval liquid replenishment process has reached a predetermined amount.
  • the control unit 10 repeats the process of step S85 until the replenishment amount reaches the predetermined amount, and when the replenishment amount reaches the predetermined amount, terminates the interval liquid replenishment process in step S86 and returns to step S81. ..
  • the liquid discharge part EL1 in the chemical liquid processing part 52 has the cooling tank Ct1 removed from the liquid discharge part EL1.
  • the liquid discharge part EL1A may be replaced.
  • a mixed solution (mixed phosphoric acid aqueous solution) is generated by mixing the phosphoric acid aqueous solution.
  • the seventh piping portion Tb7, the eighth piping portion Tb8, and the ninth piping portion Tb9 are connected so as to directly communicate with each other.
  • the present invention is not limited to the batch type substrate processing apparatus such as the substrate processing apparatus 100 according to the first embodiment, and the processing liquid is discharged from the nozzle to the substrate W for each substrate W.
  • the present invention can also be applied to a so-called single-wafer type substrate processing apparatus in which the substrate W is subjected to an etching process using a processing liquid.
  • FIG. 17 is a diagram showing an example of the configuration of the chemical liquid processing unit 52B in the single wafer processing apparatus.
  • the chemical liquid processing unit 52B includes a liquid supply unit SL2B, a chemical liquid processing unit CP2, a liquid discharge unit EL1B, and a liquid replenishing unit AL1B.
  • the liquid supply unit SL2B can perform, for example, a process (liquid supply process) of supplying a pre-use phosphoric acid aqueous solution as a processing liquid functioning as an etching liquid to the chemical liquid processing unit CP2 as the processing unit.
  • the second liquid supply unit SL2B has, for example, a fourth piping unit Tb4 as a liquid supply pipe unit, and the phosphoric acid aqueous solution sent from the processing liquid supply source En0 is supplied through the fourth piping unit Tb4 to the chemical liquid processing unit CP2. Can be supplied to.
  • the second flow rate control unit Cf2 is provided in the fourth piping unit Tb4.
  • the second flow rate control unit Cf2 includes, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter M2 that measures the flow rate of the phosphoric acid aqueous solution.
  • the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 passes through the fourth piping unit Tb4 and reaches the nozzle 50 of the chemical liquid processing unit CP2 at the flow rate set by the second flow rate control unit Cf2. Supplied.
  • the chemical liquid processing unit CP2 is, for example, a portion (processing unit) that performs etching processing on the substrate W with a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid.
  • the chemical liquid processing unit CP2 has, for example, a holding unit 30, a rotation mechanism 40, and a nozzle 50.
  • the holding unit 30 holds and rotates the substrate W in a substantially horizontal posture, for example.
  • the holding unit 30 has, for example, a vacuum chuck having an upper surface 30f capable of vacuum-adsorbing another main surface (also referred to as a lower surface) Bs1 opposite to the upper surface Us1 of the substrate W, or a plurality of members capable of holding the peripheral edge of the substrate W therebetween.
  • the rotation mechanism 40 rotates the holding unit 30.
  • the rotation mechanism 40 includes, for example, a rotation support shaft 40s that is connected to the upper end of the rotation support shaft 40s and extends in the vertical direction, and a virtual rotation shaft Ax1 that extends the rotation support shaft 40s in the vertical direction.
  • a rotation drive unit 40m having a motor or the like capable of rotating about the center.
  • the rotation drive unit 40m rotates the rotation support shaft 40s about the rotation axis Ax1, so that the holding unit 30 is rotated in a substantially horizontal plane.
  • the nozzle 50 can eject, for example, a phosphoric acid aqueous solution as a processing liquid toward the substrate W held by the holding unit 30.
  • the liquid discharge part EL1B uses a chemical solution treatment of a phosphoric acid aqueous solution (used phosphoric acid aqueous solution) as a treatment liquid (first treatment liquid) that has been used for the etching treatment on the substrate W in the chemical liquid treatment unit CP2 as the treatment portion.
  • This is a part that executes a process of discharging from the unit CP2 to the outside of the substrate processing apparatus (liquid discharging process).
  • the liquid discharge part EL1 has, for example, a liquid discharge pipe part Tg1 including an eighth pipe part Tb8.
  • the eighth piping portion Tb8 is, for example, a first end portion that is connected to communicate with the lower portion of the chemical liquid processing unit CP2 and a second end portion that is connected to communicate with the processing liquid output portion Ex0. And.
  • the liquid replenishment unit AL1B can execute a process (liquid replenishment process) of replenishing the solution discharge unit EL1B with the pre-use phosphoric acid aqueous solution as the second process liquid from the process liquid supply source En0.
  • a phosphoric acid aqueous solution (also referred to as a mixed phosphoric acid aqueous solution) is generated as a mixed solution in which the used phosphoric acid aqueous solution as the first processing liquid and the pre-used phosphoric acid aqueous solution as the second processing liquid are mixed.
  • the aqueous solution of phosphoric acid before use has a lower dissolved concentration of the substrate component (eg, silicon) than the aqueous solution of phosphoric acid used
  • the mixed aqueous solution of phosphoric acid has a lower concentration of substrate components (eg, the aqueous solution of phosphoric acid than the used aqueous solution of phosphoric acid).
  • Silicon has a low dissolved concentration.
  • the liquid replenishment part AL1B has, for example, an eleventh piping part Tb11 as a liquid replenishment pipe part connected to the liquid discharge part EL1B.
  • the eleventh piping portion Tb11 includes, for example, a first end portion connected to the treatment liquid supply source En0 and a second end portion connected so as to communicate with the eighth piping portion Tb8 in such a manner as to join. Have.
  • the 11th piping part Tb11 is provided with the 3rd flow control part Cf3.
  • the third flow rate control unit Cf3 includes, for example, a tenth valve V10 that opens and closes the flow path of the eleventh piping unit Tb11, and a third flow meter M3 that measures the flow rate of the phosphoric acid aqueous solution.
  • the processing liquid supply source En0 for supplying the processing liquid may be another processing liquid supply source.
  • the processing liquid supplied to the second liquid supply unit SL2 and the liquid supply unit SLB may be adjusted so as to contain the substrate component to some extent, for example.
  • the processing liquid supplied to the second liquid supply unit SL2 may contain a substrate component to some extent.
  • the dissolution concentration of the substrate component in the second processing liquid supplied to the liquid replenishing unit AL1 is the substrate in the processing liquid supplied to the second liquid supply unit SL2 and the liquid supply unit SLB. It may be lower than the dissolved concentration of the component.

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Abstract

In order to provide a substrate processing technique in which crystallization of a component eluted from a substrate in a processing liquid hardly occurs in a path for discharging the processing liquid from a processing unit to the outside of a substrate processing apparatus, this substrate processing apparatus is provided with a processing unit, a liquid supply unit, a liquid discharging unit, a liquid replenishing unit, and a control unit. The processing unit performs an etching process on the substrate with the processing liquid. The liquid supply unit has a liquid supply pipe part which supplies the processing liquid to the processing unit. The liquid discharging unit has a liquid discharging pipe part for discharging a first processing liquid, which has been used in the etching process for the substrate by the processing unit, from the processing unit to the outside of the substrate processing apparatus. The liquid replenishing unit has a liquid replenishing pipe part connected to the liquid discharging unit in order to generate a mixed solution by replenishing the liquid discharging unit with a second processing liquid having lower concentration of a dissolved substrate-constituting component than the first processing liquid, and mixing the first processing liquid and the second processing liquid. The control unit controls the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharging unit by the liquid replenishing unit.

Description

基板処理装置および基板処理方法Substrate processing apparatus and substrate processing method
　本発明は、半導体ウエハ、液晶ディスプレイ用基板、プラズマディスプレイ用基板、有機ＥＬ用基板、ＦＥＤ（Field Emission Display）用基板、光ディスプレイ用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板および太陽電池用基板などの基板に対して処理液によってエッチング処理を施す技術に関する。 The present invention is for a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an organic EL substrate, an FED (Field Emission Display) substrate, an optical display substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. The present invention relates to a technique for etching a substrate and a substrate such as a solar cell substrate with a treatment liquid.
　処理槽に貯留された処理液に基板を浸漬させることで基板にエッチング処理を施す基板処理装置がある（例えば、特許文献１など）。ここでは、例えば、基板の表面に形成された窒化珪素の膜を、燐酸（Ｈ３ＰＯ４）の水溶液（燐酸水溶液）などの処理液で溶出させる処理（エッチング処理）が行われる。この装置では、例えば、処理槽に対してポンプとヒータとフィルタとを有する処理液を循環させる循環ラインが設けられる。また、処理槽において処理液による基板のエッチング処理が行われると、処理槽に貯留された処理液において基板から溶出した溶出成分の濃度が上昇し得る。そして、例えば、溶出成分の濃度が高い処理液については、廃棄ラインによって基板処理装置の外に排出される。 There is a substrate processing apparatus that performs etching processing on a substrate by immersing the substrate in a processing liquid stored in a processing tank (for example, Patent Document 1). Here, for example, a treatment (etching treatment) is performed in which the silicon nitride film formed on the surface of the substrate is eluted with a treatment liquid such as an aqueous solution of phosphoric acid (H 3 PO 4 ) (phosphoric acid aqueous solution). In this apparatus, for example, a circulation line that circulates a treatment liquid having a pump, a heater, and a filter is provided in the treatment tank. Further, when the substrate is etched with the treatment liquid in the treatment tank, the concentration of the eluted component eluted from the substrate in the treatment liquid stored in the treatment tank may increase. Then, for example, the processing liquid having a high concentration of the eluted component is discharged to the outside of the substrate processing apparatus through the waste line.
特開２０１８－６６２３号公報Japanese Patent Laid-Open No. 2018-6623
　ところで、特許文献１などに記載された基板処理装置では、例えば、エッチング処理に使用された処理液は、処理槽から冷却タンクに送られ、この冷却タンクで冷却された後に、廃棄ラインによって基板処理装置の外に排出される。この場合には、例えば、廃棄ラインにおいて、処理液における基板の溶出成分が結晶化して、廃棄ラインが詰まるなどの不具合が生じる場合がある。 By the way, in the substrate processing apparatus described in Patent Document 1 or the like, for example, the processing liquid used for the etching processing is sent from the processing tank to the cooling tank, and after being cooled in this cooling tank, the substrate is processed by the disposal line. It is discharged to the outside of the device. In this case, for example, in the waste line, the elution component of the substrate in the treatment liquid may be crystallized to cause a problem such as clogging of the waste line.
　例えば、基板の表面に形成された窒化珪素の膜に燐酸水溶液などの処理液によってエッチング処理を施す場合には、処理対象となる基板の枚数およびエッチング処理の時間などに応じて、基板から溶出したシリコンが燐酸水溶液中に蓄積していく。そして、燐酸水溶液中におけるシリコンの濃度（シロキサン（ＳｉＯ２成分）濃度ともいう）が高くなる。ここで、例えば、燐酸水溶液が、処理槽から冷却タンクに送られ、この冷却タンクで冷却された後に、廃棄ラインによって基板処理装置の外に排出する場合には、廃棄ラインにおいて、燐酸水溶液におけるシロキサンが結晶化して、廃棄ラインが詰まる不具合が生じるおそれがある。 For example, when the silicon nitride film formed on the surface of the substrate is subjected to an etching treatment with a treatment liquid such as a phosphoric acid aqueous solution, it is eluted from the substrate according to the number of substrates to be treated and the etching treatment time. Silicon accumulates in the phosphoric acid aqueous solution. Then, the concentration of silicon (also referred to as the concentration of siloxane (SiO 2 component)) in the phosphoric acid aqueous solution becomes high. Here, for example, when the phosphoric acid aqueous solution is sent from the processing tank to the cooling tank, cooled in this cooling tank, and then discharged to the outside of the substrate processing apparatus by the disposal line, the siloxane in the phosphoric acid aqueous solution is discharged in the disposal line. May crystallize and the waste line may be clogged.
　このような廃棄ラインが詰まる不具合が生じると、例えば、廃棄ラインの詰まりを解消するまで、基板処理装置を使用することができなくなる。 When such a problem occurs that the waste line is clogged, for example, the substrate processing apparatus cannot be used until the clog in the waste line is cleared.
　このような問題は、処理槽に貯留された処理液に基板を浸漬させることで基板にエッチング処理を施す、いわゆるバッチ式の基板処理装置に限られず、ノズルから基板に処理液を吐出して処理液を用いたエッチング処理を基板に施す、いわゆる枚葉式の基板処理装置など、基板処理装置一般にも共通する。 Such a problem is not limited to a so-called batch type substrate processing apparatus in which a substrate is etched by immersing the substrate in the processing liquid stored in the processing tank, and the processing liquid is discharged from the nozzle onto the substrate for processing. This is also common to substrate processing apparatuses in general, such as a so-called single-wafer type substrate processing apparatus that performs etching processing using a liquid on a substrate.
　本発明は、上記課題に鑑みてなされたものであり、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい基板処理技術を提供することを目的とする。 The present invention has been made in view of the above problems, and provides a substrate processing technique in which crystallization of an elution component from a substrate in a processing liquid does not easily occur in a path for discharging the processing liquid from a processing unit to the outside of the substrate processing apparatus. The purpose is to
　上記課題を解決するために、第１の態様に係る基板処理装置は、処理部、液供給部、液排出部、液補充部および制御部を備える。前記処理部は、処理液によって基板に対するエッチング処理を行う。前記液供給部は、前記処理部に前記処理液を供給する液供給管部を有する。前記液排出部は、前記処理部において前記基板に対する前記エッチング処理に使用された後の第１処理液を前記処理部から前記基板処理装置の外まで排出するための液排出管部を有する。前記液補充部は、前記基板を構成する成分の溶解濃度が前記第１処理液よりも低い第２処理液を前記液排出部に補充することで前記第１処理液と前記第２処理液とを混ぜて混合溶液を生成するために、前記液排出部に接続された液補充管部を有する。前記制御部は、前記液供給部による前記処理部への前記処理液の供給と、前記液補充部による前記液排出部への前記第２処理液の補充と、を制御する。 In order to solve the above problems, the substrate processing apparatus according to the first aspect includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishment unit, and a control unit. The processing unit performs etching processing on the substrate with a processing liquid. The liquid supply unit has a liquid supply pipe unit that supplies the processing liquid to the processing unit. The liquid discharge part has a liquid discharge pipe part for discharging the first processing liquid, which has been used for the etching process on the substrate in the processing part, from the processing part to the outside of the substrate processing apparatus. The liquid replenishment unit replenishes the liquid discharge unit with a second treatment liquid in which the dissolved concentration of the constituents of the substrate is lower than that of the first treatment liquid, so that the first treatment liquid and the second treatment liquid And a liquid replenishment pipe part connected to the liquid discharge part for mixing to produce a mixed solution. The control unit controls the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishment unit.
　第２の態様に係る基板処理装置は、第１の態様に係る基板処理装置であって、前記液補充部は、前記第２処理液を前記第１処理液に混ぜることで、前記混合溶液における前記基板を構成する成分の溶解濃度を溶解度未満とする。 A substrate processing apparatus according to a second aspect is the substrate processing apparatus according to the first aspect, wherein the liquid replenishing unit mixes the second processing liquid with the first processing liquid to form a mixed solution in the mixed solution. The dissolved concentration of the component that constitutes the substrate is less than the solubility.
　第３の態様に係る基板処理装置は、第１または第２の態様に係る基板処理装置であって、前記処理液は、燐酸水溶液を含み、前記基板は、窒化珪素の膜を有し、前記エッチング処理は、前記燐酸水溶液によって前記窒化珪素の膜を溶解させる処理を含む。 A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, wherein the processing liquid contains an aqueous phosphoric acid solution, and the substrate has a silicon nitride film, The etching process includes a process of dissolving the silicon nitride film with the phosphoric acid aqueous solution.
　第４の態様に係る基板処理装置は、第１から第３の何れか１つの態様に係る基板処理装置であって、前記液供給部は、前記処理部に前記第２処理液を供給する。 The substrate processing apparatus according to the fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, and the liquid supply unit supplies the second processing liquid to the processing unit.
　第５の態様に係る基板処理装置は、第１から第４の何れか１つの態様に係る基板処理装置であって、前記処理部は、前記液供給部からの前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、前記制御部は、前記処理部によって前記基板に対する前記エッチング処理を行う際に、前記液供給部による前記処理部への前記処理液の２回以上の供給と、前記液補充部による前記液排出部への前記第２処理液の２回以上の補充と、を同期させて実行させる。 A substrate processing apparatus according to a fifth aspect is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the processing unit responds to the supply of the processing liquid from the liquid supply unit. The first processing liquid is discharged to the liquid discharge unit, and the control unit performs twice the processing liquid to the processing unit by the liquid supply unit when performing the etching process on the substrate by the processing unit. The above-mentioned supply and the replenishment of the second treatment liquid to the liquid discharge portion by the liquid replenishment portion twice or more are executed in synchronization with each other.
　第６の態様に係る基板処理装置は、第１から第５の何れか１つの態様に係る基板処理装置であって、前記処理部は、前記液供給部からの前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、前記制御部は、前記処理部によって前記基板に対する前記エッチング処理を行う前に、前記液補充部による前記液排出部への前記第２処理液の少なくとも１回補充、を実行させ、前記処理部によって前記基板に対する前記エッチング処理を行う際に、前記液供給部による前記処理部への前記処理液の供給と、前記液補充部による前記液排出部への前記第２処理液の補充と、を実行させる。 A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the processing unit is responsive to the supply of the processing liquid from the liquid supply unit. The first processing liquid is discharged to the liquid discharging unit, and the control unit is configured to discharge the second processing liquid to the liquid discharging unit by the liquid replenishing unit before performing the etching process on the substrate by the processing unit. Replenishing is performed at least once, and when the processing unit performs the etching process on the substrate, the liquid supply unit supplies the processing liquid to the processing unit and the liquid replenishing unit discharges the liquid. And replenishing the second processing liquid to the part.
　第７の態様に係る基板処理装置は、第１から第６の何れか１つの態様に係る基板処理装置であって、前記制御部は、前記処理部による前記基板に対する前記エッチング処理が実行された後であって、次の前記処理部による前記基板に対する前記エッチング処理が実行されるまでの期間に、所定のタイミングで前記液補充部によって前記液排出部への前記第２処理液の補充を実行させる。 A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the control unit performs the etching process on the substrate by the processing unit. After that, the liquid replenishing unit replenishes the second processing liquid to the liquid discharging unit at a predetermined timing until the etching process is performed on the substrate by the next processing unit. Let
　第８の態様に係る基板処理装置は、第１から第７の何れか１つの態様に係る基板処理装置であって、前記液排出部は、さらに前記第１処理液を冷却する冷却タンクを含み、前記液排出管部は、前記処理部と前記冷却タンクとを接続している第１部分と、前記冷却タンクに接続されており、前記基板処理装置の外まで液を排出するための第２部分と、を含む。 A substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the liquid discharge unit further includes a cooling tank that cools the first processing liquid. The liquid discharge pipe part is connected to the first part connecting the processing part and the cooling tank, and the second part connected to the cooling tank for discharging the liquid to the outside of the substrate processing apparatus. Including a part and.
　第９の態様に係る基板処理装置は、第８の態様に係る基板処理装置であって、前記液排出部は、前記冷却タンクに貯留されている液の貯留量を検出する検出部、をさらに含み、前記処理部は、前記液供給部からの前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、前記制御部は、前記検出部によって前記貯留量が第１閾値に到達していることが検出されれば、前記処理部による前記基板に対する前記エッチング処理の実行を禁止する。 A substrate processing apparatus according to a ninth aspect is the substrate processing apparatus according to the eighth aspect, wherein the liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank. In addition, the processing unit discharges the first processing liquid to the liquid discharge unit in response to the supply of the processing liquid from the liquid supply unit, and the control unit causes the detection unit to store the first stored liquid in the first storage amount. When it is detected that the threshold value has been reached, execution of the etching process on the substrate by the processing unit is prohibited.
　第１０の態様に係る基板処理装置は、第７の態様に係る基板処理装置であって、前記液排出部は、さらに前記第１処理液を冷却する冷却タンクを含み、前記液排出管部は、前記処理部と前記冷却タンクとを接続している第１部分と、前記冷却タンクに接続されており、前記基板処理装置の外まで液を排出するための第２部分と、を含み、前記液排出部は、前記冷却タンクに貯留されている液の貯留量を検出する検出部、をさらに含み、前記制御部は、前記検出部によって前記貯留量が第２閾値に到達していることが検出されれば、前記所定のタイミングでの前記液補充部による前記液排出部への前記第２処理液の補充の実行を禁止する。 A substrate processing apparatus according to a tenth aspect is the substrate processing apparatus according to the seventh aspect, wherein the liquid discharge section further includes a cooling tank for cooling the first processing liquid, and the liquid discharge pipe section includes A first portion connecting the processing unit and the cooling tank, and a second portion connected to the cooling tank for discharging the liquid to the outside of the substrate processing apparatus, The liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank, and the control unit is configured such that the storage unit has reached the second threshold value by the detection unit. If detected, the execution of the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishment unit at the predetermined timing is prohibited.
　第１１の態様に係る基板処理方法は、基板処理装置の基板処理方法であって、エッチング工程、液供給工程、液排出工程および液補充工程を有する。前記エッチング工程では、処理部において処理液によって基板に対するエッチング処理を行う。前記液供給工程では、液供給管部を介して前記処理部に前記処理液を供給する。前記液排出工程では、前記エッチング工程において使用された後の第１処理液を前記処理部から前記基板処理装置の外まで液排出管部を含む液排出部を介して排出する。前記液補充工程では、前記基板を構成する成分の溶解濃度が前記第１処理液よりも低い第２処理液を、液補充管部を介して前記液排出部に補充することで、前記第１処理液と前記第２処理液とを混ぜて混合溶液を生成する。 The substrate processing method according to the eleventh aspect is a substrate processing method for a substrate processing apparatus, which has an etching process, a liquid supply process, a liquid discharge process, and a liquid replenishment process. In the etching process, the substrate is etched with the processing liquid in the processing unit. In the liquid supply step, the processing liquid is supplied to the processing section via a liquid supply pipe section. In the liquid discharging step, the first processing liquid used in the etching step is discharged from the processing section to the outside of the substrate processing apparatus through a liquid discharging section including a liquid discharging pipe section. In the liquid replenishing step, a second processing liquid having a dissolved concentration of a component forming the substrate lower than that of the first processing liquid is replenished to the liquid discharging portion via a liquid replenishing pipe portion, thereby the first liquid The treatment liquid and the second treatment liquid are mixed to form a mixed solution.
　第１２の態様に係る基板処理方法は、第１１の態様に係る基板処理方法であって、前記液補充工程において、前記第２処理液を前記第１処理液に混ぜることで、前記混合溶液における前記基板を構成する成分の溶解濃度を溶解度未満とする。 A substrate processing method according to a twelfth aspect is the substrate processing method according to the eleventh aspect, wherein in the liquid replenishing step, the second processing liquid is mixed with the first processing liquid so that the mixed solution The dissolved concentration of the component that constitutes the substrate is less than the solubility.
　第１３の態様に係る基板処理方法は、第１１または第１２の態様に係る基板処理方法であって、前記処理液は、燐酸水溶液を含み、前記基板は、窒化珪素の膜を有し、前記エッチング工程において、前記燐酸水溶液によって前記窒化珪素の膜を溶解させる。 A substrate processing method according to a thirteenth aspect is the substrate processing method according to the eleventh or twelfth aspect, wherein the treatment liquid contains a phosphoric acid aqueous solution, and the substrate has a silicon nitride film. In the etching step, the silicon nitride film is dissolved by the phosphoric acid aqueous solution.
　第１４の態様に係る基板処理方法は、第１１から第１３の何れか１つの態様に係る基板処理方法であって、前記液供給工程において、前記液供給管部を介して前記処理部に前記第２処理液を供給する。 A substrate processing method according to a fourteenth aspect is the substrate processing method according to any one of the eleventh to thirteenth aspects, wherein in the liquid supply step, the processing unit is connected to the processing unit via the liquid supply pipe unit. A second processing liquid is supplied.
　第１５の態様に係る基板処理方法は、第１１から第１４の何れか１つの態様に係る基板処理方法であって、前記液排出工程において、前記処理部は、前記液供給工程における前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、前記エッチング工程において前記エッチング処理を行う際に、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の２回以上の供給と、前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の２回以上の補充と、を同期させて実行する。 A substrate processing method according to a fifteenth aspect is the substrate processing method according to any one of the eleventh to fourteenth aspects, wherein in the liquid discharging step, the processing section includes the processing liquid in the liquid supplying step. The first processing liquid is discharged to the liquid discharge part according to the supply of the liquid, and when the etching process is performed in the etching process, the first processing liquid is supplied to the processing part via the liquid supply pipe part in the liquid supply process. The supply of the treatment liquid two or more times and the replenishment of the second treatment liquid to the liquid discharge portion via the liquid replenishment pipe portion in the liquid replenishment step are performed twice or more in synchronization.
　第１６の態様に係る基板処理方法は、第１１から第１５の何れか１つの態様に係る基板処理方法であって、前記液排出工程において、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の供給に応じて、前記第１処理液を前記処理部から前記液排出部に排出し、前記エッチング工程における前記エッチング処理の前に、前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の補充を少なくとも１回実行し、前記エッチング工程において前記エッチング処理を行う際に、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の供給を実行するとともに、前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の補充を実行する。 A substrate processing method according to a sixteenth aspect is the substrate processing method according to any one of the eleventh to fifteenth aspects, wherein in the liquid discharge step, the liquid supply pipe section in the liquid supply step is used. In response to the supply of the processing liquid to the processing unit, the first processing liquid is discharged from the processing unit to the liquid discharging unit, and the liquid in the liquid replenishing process is added before the etching process in the etching process. When the replenishment of the second treatment liquid to the liquid discharge portion via the replenishment pipe portion is performed at least once, and when the etching process is performed in the etching step, the second treatment liquid is inserted through the liquid supply pipe portion in the liquid supply step. The supply of the processing liquid to the processing unit is performed, and the second processing liquid is replenished to the liquid discharging unit via the liquid replenishment pipe unit in the liquid replenishing step.
　第１７の態様に係る基板処理方法は、第１１から第１６の何れか１つの態様に係る基板処理方法であって、前記エッチング工程における前記エッチング処理が実行された後であって、次の前記エッチング工程における前記エッチング処理が実行されるまでの期間に、所定のタイミングで前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の補充を実行する。 A substrate processing method according to a seventeenth aspect is the substrate processing method according to any one of the eleventh to sixteenth aspects, which is performed after the etching treatment in the etching step is performed, During the period until the etching process is performed in the etching process, the second processing liquid is replenished to the liquid discharge portion via the liquid replenishment pipe portion in the liquid replenishment process at a predetermined timing.
　第１８の態様に係る基板処理方法は、第１１から第１７の何れか１つの態様に係る基板処理方法であって、前記液排出工程は、前記第１処理液を前記処理部から前記液排出管部に含まれた第１部分に排出する第１液排出工程と、前記液排出部に含まれ且つ前記第１部分に接続された冷却タンクにおいて前記第１処理液もしくは前記混合溶液を冷却する液冷却工程と、前記冷却タンクから前記液排出管部に含まれており且つ前記冷却タンクに接続された第２部分を介して前記混合溶液を前記基板処理装置の外まで排出する第２液排出工程と、を含む。 A substrate processing method according to an eighteenth aspect is the substrate processing method according to any one of the eleventh to seventeenth aspects, wherein the liquid discharging step discharges the first processing liquid from the processing unit. A first liquid discharging step of discharging to a first part included in the pipe part, and cooling the first processing liquid or the mixed solution in a cooling tank included in the liquid discharging part and connected to the first part A liquid cooling step and a second liquid discharge for discharging the mixed solution from the cooling tank to the outside of the substrate processing apparatus through a second part included in the liquid discharge pipe section and connected to the cooling tank. And a process.
　第１９の態様に係る基板処理方法は、第１８の態様に係る基板処理方法であって、前記冷却タンクに貯留されている液の貯留量を検出する検出工程、をさらに有し、前記液排出工程において、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の供給に応じて、前記第１処理液を前記処理部から前記液排出部に排出し、前記検出工程において前記貯留量が第１閾値に到達していることが検出されれば、前記エッチング工程における前記エッチング処理の実行を禁止する。 A substrate processing method according to a nineteenth aspect is the substrate processing method according to the eighteenth aspect, further comprising a detection step of detecting a storage amount of the liquid stored in the cooling tank, In the step, the first processing liquid is discharged from the processing part to the liquid discharge part in accordance with the supply of the processing liquid to the processing part via the liquid supply pipe part in the liquid supply process, and the detection is performed. If it is detected in the step that the storage amount has reached the first threshold value, execution of the etching process in the etching step is prohibited.
　第２０の態様に係る基板処理方法は、第１７の態様に係る基板処理方法であって、前記液排出工程は、前記第１処理液を前記処理部から前記液排出管部に含まれた第１部分に排出する第１液排出工程と、前記液排出部に含まれ且つ前記第１部分に接続された冷却タンクにおいて前記第１処理液もしくは前記混合溶液を冷却する液冷却工程と、前記冷却タンクから前記液排出管部に含まれており且つ前記冷却タンクに接続された第２部分を介して前記混合溶液を前記基板処理装置の外まで排出する第２液排出工程と、を含み、前記基板処理方法は、前記冷却タンクに貯留されている液の貯留量を検出する検出工程、をさらに有し、前記検出工程において前記貯留量が第２閾値に到達していることが検出されれば、前記液補充工程における前記所定のタイミングにおける前記液補充管部を介した前記液排出部への前記第２処理液の補充を禁止する。 A substrate processing method according to a twentieth aspect is the substrate processing method according to the seventeenth aspect, wherein in the liquid discharging step, the first processing liquid is contained in the liquid discharging pipe portion from the processing portion. A first liquid discharging step of discharging to one part; a liquid cooling step of cooling the first processing liquid or the mixed solution in a cooling tank included in the liquid discharging part and connected to the first part; A second liquid discharging step of discharging the mixed solution from the tank to the outside of the substrate processing apparatus through a second portion which is included in the liquid discharging pipe section and which is connected to the cooling tank. The substrate processing method further includes a detection step of detecting a storage amount of the liquid stored in the cooling tank, and if it is detected that the storage amount reaches a second threshold value in the detection step. The replenishment of the second processing liquid to the liquid discharge portion via the liquid replenishment pipe portion at the predetermined timing in the liquid replenishment step is prohibited.
　第１の態様に係る基板処理装置および第１１の態様に係る基板処理方法の何れによっても、例えば、処理部から基板処理装置外に第１処理液を排出する際に、この第１処理液に、基板を構成する成分の溶解濃度が相対的に低い第２処理液を混ぜて排出することができる。これにより、例えば、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい。 By the substrate processing apparatus according to the first aspect and the substrate processing method according to the eleventh aspect, for example, when the first processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus, It is possible to mix and discharge the second processing liquid having a relatively low dissolved concentration of the components forming the substrate. As a result, for example, crystallization of the components eluted from the substrate in the processing liquid does not easily occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
　第２の態様に係る基板処理装置および第１２の態様に係る基板処理方法の何れによっても、例えば、第１処理液に第２処理液を混ぜて生成した混合溶液における基板を構成する成分の溶解濃度を溶解度未満とすることで、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい。 In any of the substrate processing apparatus according to the second aspect and the substrate processing method according to the twelfth aspect, for example, dissolution of components constituting the substrate in a mixed solution generated by mixing the second processing liquid with the first processing liquid By setting the concentration to be less than the solubility, crystallization of the component eluted from the substrate in the processing liquid is less likely to occur in the route of discharging the processing liquid from the processing unit to the outside of the substrate processing apparatus.
　第３の態様に係る基板処理装置および第１３の態様に係る基板処理方法の何れによっても、例えば、処理部から基板処理装置外に第１の燐酸水溶液を排出する際に、この第１の燐酸水溶液に、シリコンの溶解濃度が相対的に低い第２の燐酸水溶液を混ぜて排出することができる。これにより、例えば、処理部から基板処理装置外へ燐酸水溶液を排出する経路においてシロキサンの結晶化が生じにくい。 By the substrate processing apparatus according to the third aspect and the substrate processing method according to the thirteenth aspect, for example, when the first phosphoric acid aqueous solution is discharged from the processing unit to the outside of the substrate processing apparatus, the first phosphoric acid The second phosphoric acid aqueous solution in which the dissolved concentration of silicon is relatively low can be mixed and discharged into the aqueous solution. Thereby, for example, crystallization of siloxane is unlikely to occur in the path through which the phosphoric acid aqueous solution is discharged from the processing unit to the outside of the substrate processing apparatus.
　第４の態様に係る基板処理装置および第１４の態様に係る基板処理方法の何れによっても、例えば、処理部に供給するための第２処理液を、液排出部において第１処理液に混合させる用途にも用いることができる。これにより、例えば、処理部に第２処理液を供給する液供給部と、液排出部で第１処理液に混ぜる第２処理液を補充するための液補充部と、の間で構成の少なくとも一部の共用化を図ることができる。その結果、例えば、基板処理装置の構成の簡略化を図ることができる。 In any of the substrate processing apparatus according to the fourth aspect and the substrate processing method according to the fourteenth aspect, for example, the second processing liquid to be supplied to the processing unit is mixed with the first processing liquid in the liquid discharging unit. It can also be used for purposes. Thereby, for example, at least the configuration between the liquid supply unit that supplies the second processing liquid to the processing unit and the liquid replenishment unit that replenishes the second processing liquid mixed with the first processing liquid in the liquid discharge unit It is possible to share some of them. As a result, for example, the configuration of the substrate processing apparatus can be simplified.
　第５の態様に係る基板処理装置および第１５の態様に係る基板処理方法の何れによっても、例えば、処理部によって基板にエッチング処理を施す際に、処理部への処理液の２回以上の供給に同期して、処理部から液排出部への第１処理液の２回以上の排出と、液排出部への第２処理液の２回以上の補充と、を行うことができる。これにより、例えば、液排出部で生成される混合溶液における基板を構成する成分の溶解濃度が均一化されやすい。その結果、例えば、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい。 With both the substrate processing apparatus according to the fifth aspect and the substrate processing method according to the fifteenth aspect, for example, when an etching process is performed on a substrate by the processing unit, the processing liquid is supplied to the processing unit twice or more. In synchronism with the above, it is possible to discharge the first processing liquid from the processing unit to the liquid discharging unit twice or more and replenish the second processing liquid to the liquid discharging unit two or more times. As a result, for example, the dissolved concentrations of the components that make up the substrate in the mixed solution generated in the liquid discharge unit are likely to be uniform. As a result, for example, crystallization of the components eluted from the substrate in the processing liquid is less likely to occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
　第６の態様に係る基板処理装置および第１６の態様に係る基板処理方法の何れによっても、例えば、エッチング処理を行う前に、液排出部への第２処理液の少なくとも１回の供給を行うことで、エッチング処理を行う際に、処理部から排出される第１処理液と、液補充部からの第２処理液と、が混合されやすくなる。これにより、例えば、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい。 In both the substrate processing apparatus according to the sixth aspect and the substrate processing method according to the sixteenth aspect, for example, the second processing liquid is supplied to the liquid discharge portion at least once before the etching processing. This facilitates mixing of the first processing liquid discharged from the processing unit and the second processing liquid supplied from the liquid replenishing unit when performing the etching process. As a result, for example, crystallization of the components eluted from the substrate in the processing liquid does not easily occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
　第７の態様に係る基板処理装置および第１７の態様に係る基板処理方法の何れによっても、例えば、処理部による基板に対する２回以上のエッチング処理の間のエッチング処理が行われていないインターバルの期間において、所定のタイミングで液排出部に第２処理液が補充される。これにより、例えば、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい。 In both the substrate processing apparatus according to the seventh aspect and the substrate processing method according to the seventeenth aspect, for example, an interval period in which the etching process is not performed between two or more etching processes performed on the substrate by the processing unit. In, the second processing liquid is replenished in the liquid discharge portion at a predetermined timing. As a result, for example, crystallization of the components eluted from the substrate in the processing liquid does not easily occur in the path through which the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus.
　第８の態様に係る基板処理装置および第１８の態様に係る基板処理方法の何れによっても、例えば、第１処理液が冷却タンクで冷却されても、処理部から基板処理装置外へ処理液を排出する経路において処理液における基板からの溶出成分の結晶化が生じにくい。 With both the substrate processing apparatus according to the eighth aspect and the substrate processing method according to the eighteenth aspect, for example, even if the first processing liquid is cooled in the cooling tank, the processing liquid is discharged from the processing unit to the outside of the substrate processing apparatus. Crystallization of the components eluted from the substrate in the treatment liquid does not easily occur in the discharge route.
　第９の態様に係る基板処理装置および第１９の態様に係る基板処理方法の何れによっても、例えば、冷却タンクに第１閾値以上の液が貯留されていれば、処理部において処理液を供給しつつ第１処理液を排出する基板のエッチング処理を実行しない。これにより、例えば、基板にエッチング処理を施す際に処理部から液排出部に第１処理液を排出することができずにエッチング処理で生じる不具合の発生を抑制することができる。 With both the substrate processing apparatus according to the ninth aspect and the substrate processing method according to the nineteenth aspect, for example, when the cooling tank stores a liquid having a first threshold value or more, the processing unit supplies the processing liquid. Meanwhile, the etching process of the substrate that discharges the first processing liquid is not performed. Thereby, for example, when the substrate is subjected to the etching process, it is possible to suppress the occurrence of a defect caused by the etching process because the first processing liquid cannot be discharged from the processing unit to the liquid discharging unit.
　第１０の態様に係る基板処理装置および第２０の態様に係る基板処理方法の何れによっても、例えば、冷却タンクに第２閾値以上の液が貯留されていれば、処理部によるエッチング処理が行われていないインターバルの期間において、所定のタイミングでの液排出部への第２処理液の補充を実行しない。これにより、例えば、インターバル期間の後において基板にエッチング処理を施す際に処理部から液排出部に第１処理液を排出することができずにエッチング処理で生じる不具合の発生を抑制することができる。 In any of the substrate processing apparatus according to the tenth aspect and the substrate processing method according to the twentieth aspect, for example, when a liquid having a second threshold value or more is stored in the cooling tank, the etching process is performed by the processing unit. In the period of the non-open interval, the replenishment of the second processing liquid to the liquid discharge part at a predetermined timing is not executed. Thereby, for example, when the substrate is subjected to the etching process after the interval period, it is possible to suppress the occurrence of a defect caused by the etching process because the first processing liquid cannot be discharged from the processing unit to the liquid discharging unit. ..
図１は、第１実施形態に係る基板処理装置の概略的な構成を示す平面図である。FIG. 1 is a plan view showing a schematic configuration of the substrate processing apparatus according to the first embodiment. 図２は、第１実施形態に係る基板処理装置の機能的な構成を示すブロック図である。FIG. 2 is a block diagram showing a functional configuration of the substrate processing apparatus according to the first embodiment. 図３は、薬液処理部の概略的な構成を示す図である。FIG. 3 is a diagram showing a schematic configuration of the chemical liquid processing section. 図４は、エッチング処理に係る動作フローの一例を示すフローチャートである。FIG. 4 is a flowchart showing an example of an operation flow related to etching processing. 図５は、前処理の動作の一例に係るタイミングチャートである。FIG. 5 is a timing chart according to an example of the operation of the preprocessing. 図６は、本処理の動作の一例に係るタイミングチャートである。FIG. 6 is a timing chart according to an example of the operation of this processing. 図７は、本処理に係る動作フローの一例を示すフローチャートである。FIG. 7 is a flowchart showing an example of the operation flow of this processing. 図８は、インターバル液補充処理に係る動作を説明するための図である。FIG. 8 is a diagram for explaining the operation related to the interval liquid replenishing process. 図９は、冷却タンクにおける監視の対象となる貯留量を説明するための図である。FIG. 9 is a diagram for explaining the storage amount of the cooling tank to be monitored. 図１０は、冷却タンクの貯留量の監視結果に応じたインターバル液補充処理に係る動作を説明するための図である。FIG. 10 is a diagram for explaining the operation related to the interval liquid replenishment processing according to the monitoring result of the storage amount of the cooling tank. 図１１は、インターバル液補充処理の不実行期間の監視に係る動作を説明するための図である。FIG. 11 is a diagram for explaining the operation relating to the monitoring of the non-execution period of the interval liquid replenishing process. 図１２は、インターバル液補充処理の実行時間の監視に係る動作を説明するための図である。FIG. 12 is a diagram for explaining the operation related to monitoring the execution time of the interval liquid replenishing process. 図１３は、冷却タンクの貯留量の監視結果に応じたサイクル処理の禁止に係る動作を説明するための図である。FIG. 13 is a diagram for explaining an operation related to prohibition of the cycle processing according to the monitoring result of the storage amount of the cooling tank. 図１４は、サイクル処理および液補充処理の実行タイミングのバリエーションに係るタイミングチャートである。FIG. 14 is a timing chart relating to variations in the execution timings of the cycle process and the liquid replenishment process. 図１５は、サイクル処理および液補充処理の実行タイミングの第１変形例に係る動作フローの一例を示す図である。FIG. 15 is a diagram showing an example of an operation flow according to the first modification of the execution timings of the cycle process and the liquid replenishment process. 図１６は、一変形例に係る薬液処理部の概略的な構成を示す図である。FIG. 16 is a diagram showing a schematic configuration of a chemical liquid processing unit according to a modification. 図１７は、一変形例に係る枚葉式の基板処理装置における薬液処理部の構成の一例を示す図である。FIG. 17 is a diagram showing an example of a configuration of a chemical liquid processing unit in a single-wafer type substrate processing apparatus according to a modification.
　以下、本発明の実施形態および変形例を図面に基づいて説明する。図面においては同様な構成および機能を有する部分については同じ符号が付されており、下記説明では重複説明が省略される。また、図面は模式的に示されたものであり、各図における各種構造のサイズおよび位置関係などは正確に図示されたものではない。 Hereinafter, embodiments and modifications of the present invention will be described with reference to the drawings. In the drawings, parts having similar configurations and functions are designated by the same reference numerals, and redundant description will be omitted in the following description. Further, the drawings are shown schematically, and the sizes and positional relationships of various structures in each drawing are not exactly shown.
　＜１．第１実施形態＞
　　＜１－１．基板処理装置の構成＞
　図１は、第１実施形態に係る基板処理装置１００の概略的な構成の一例を示す平面図である。図２は、第１実施形態に係る基板処理装置１００の機能的な構成の一例を示すブロック図である。基板処理装置１００は、例えば、基板Ｗに対して薬液処理、洗浄処理および乾燥処理を施すことができる。 <1. First Embodiment>
<1-1. Substrate processing system configuration>
FIG. 1 is a plan view showing an example of a schematic configuration of a substrate processing apparatus 100 according to the first embodiment. FIG. 2 is a block diagram showing an example of a functional configuration of the substrate processing apparatus 100 according to the first embodiment. The substrate processing apparatus 100 can perform, for example, chemical treatment, cleaning treatment, and drying treatment on the substrate W.
　図１で示されるように、基板処理装置１００は、例えば、投入部１、第１搬送部２、第２搬送部３、乾燥処理部４、第１液処理部５、第２液処理部６、払出部７、入力部８、出力部９および制御部１０を備えている。 As shown in FIG. 1, the substrate processing apparatus 100 includes, for example, an input unit 1, a first transfer unit 2, a second transfer unit 3, a drying processing unit 4, a first liquid processing unit 5, and a second liquid processing unit 6. The payout unit 7, the input unit 8, the output unit 9, and the control unit 10 are provided.
　投入部１は、例えば、基板処理装置１００外から基板処理装置１００内に複数枚の処理前の基板Ｗを投入するための部分である。この投入部１は、例えば、複数枚（例えば２５枚）の処理前の基板Ｗが収納されたカセットＣ１をそれぞれ載置することが可能な２つの載置台１１を有する。 The loading unit 1 is, for example, a unit for loading a plurality of unprocessed substrates W into the substrate processing apparatus 100 from outside the substrate processing apparatus 100. The loading unit 1 has, for example, two mounting tables 11 each capable of mounting a cassette C1 in which a plurality of (for example, 25) unprocessed substrates W are stored.
　払出部７は、例えば、基板処理装置１００内から基板処理装置１００外に複数枚の処理後の基板Ｗを払い出すための部分である。この払出部７は、例えば、投入部１に隣接するように位置している。この払出部７は、例えば、カセットＣ１をそれぞれ載置することが可能な２つの載置台７１を有する。払出部７では、複数枚（例えば２５枚）の処理後の基板ＷをカセットＣ１に収納した状態で、カセットＣ１ごと基板処理装置１００の外に複数枚の処理後の基板Ｗを払い出すことができる。 The payout unit 7 is, for example, a unit for paying out a plurality of processed substrates W from the inside of the substrate processing apparatus 100 to the outside of the substrate processing apparatus 100. The payout unit 7 is located, for example, so as to be adjacent to the charging unit 1. The payout unit 7 has, for example, two mounting tables 71 on which the cassettes C1 can be respectively mounted. In the dispensing unit 7, a plurality of (for example, 25) processed substrates W can be delivered to the outside of the substrate processing apparatus 100 along with the cassette C1 while the plurality of processed substrates W are stored in the cassette C1. it can.
　第１搬送部２は、例えば、投入部１と払出部７とに沿う位置に存在している。この第１搬送部２は、例えば、投入部１に載置されたカセットＣ１に収納されている全ての基板Ｗを取り出して、第２搬送部３に対して搬送することができる。また、第１搬送部２は、例えば、第２搬送部３から処理後の基板Ｗを受け取り、この処理後の基板Ｗを、払出部７の載置台７１上に載置されたカセットＣ１に対して搬送して、このカセットＣ１内に収納することができる。ここで、第１搬送部２は、例えば、カセットＣ１ごとに、基板Ｗのロットを認識するとともに、カセットＣ１に収納されている基板Ｗの枚数を計測することができてもよい。 The first transfer unit 2 is present at a position along the input unit 1 and the payout unit 7, for example. The first transfer unit 2 can take out, for example, all the substrates W stored in the cassette C1 placed in the loading unit 1 and transfer them to the second transfer unit 3. The first transfer unit 2 receives the processed substrate W from the second transfer unit 3, and the processed substrate W with respect to the cassette C1 placed on the mounting table 71 of the payout unit 7. It can be conveyed and stored in the cassette C1. Here, the first transport unit 2 may be able to recognize the lot of substrates W for each cassette C1 and measure the number of substrates W stored in the cassette C1, for example.
　第２搬送部３は、例えば、基板処理装置１００の長手方向に沿って移動することができる。第２搬送部３の移動方向に沿って、第１搬送部２に近い側から順に、乾燥処理部４、第１液処理部５および第２液処理部６が位置している。換言すれば、例えば、乾燥処理部４に隣接する位置に第１液処理部５が存在し、この第１液処理部５に隣接する位置に第２液処理部６が存在している。 The second transfer unit 3 can move along the longitudinal direction of the substrate processing apparatus 100, for example. The drying processing unit 4, the first liquid processing unit 5, and the second liquid processing unit 6 are located in order from the side closer to the first transportation unit 2 along the moving direction of the second transportation unit 3. In other words, for example, the first liquid processing unit 5 is present at a position adjacent to the drying processing unit 4, and the second liquid processing unit 6 is present at a position adjacent to the first liquid processing unit 5.
　乾燥処理部４は、例えば、複数枚の基板Ｗを低圧のチャンバ内に収納して乾燥させることができる。 The drying processing unit 4 can store, for example, a plurality of substrates W in a low-pressure chamber to dry them.
　第１液処理部５は、例えば、洗浄処理部５１と、薬液処理部５２と、副搬送部５３と、を有する。洗浄処理部５１は、例えば、複数枚の基板Ｗに対して純水で洗浄する処理（純水洗浄処理ともいう）を施すことができる。薬液処理部５２は、例えば、複数枚の基板Ｗに対して薬液を含む処理液によって処理（薬液処理ともいう）を施すことができる。副搬送部５３は、例えば、第２搬送部３との間で基板Ｗの受け渡しを行うことが可能であるとともに、洗浄処理部５１および薬液処理部５２のそれぞれにおいて昇降可能である。 The first liquid processing unit 5 includes, for example, a cleaning processing unit 51, a chemical liquid processing unit 52, and a sub transport unit 53. The cleaning processing unit 51 can perform, for example, a process of cleaning the plurality of substrates W with pure water (also referred to as pure water cleaning process). The chemical liquid processing unit 52 can perform processing (also referred to as chemical liquid processing) on a plurality of substrates W with a processing liquid containing a chemical liquid, for example. The sub-transport unit 53 can transfer the substrate W to and from the second transport unit 3, and can move up and down in each of the cleaning processing unit 51 and the chemical liquid processing unit 52.
　第２液処理部６は、例えば、第１液処理部５と同様に、洗浄処理部５１と、薬液処理部５２と、副搬送部５３と、を有する。 The second liquid processing unit 6 includes, for example, a cleaning processing unit 51, a chemical liquid processing unit 52, and a sub-transporting unit 53, like the first liquid processing unit 5.
　入力部８は、例えば、載置台１１の近くに位置している。この入力部８は、例えば、オペレータが各種の情報を選択あるいは入力を行うことができる部分である。この入力部８は、例えば、タッチパネルなどで構成される。なお、入力部８は、押下などの各種の操作が可能なボタンなどを含む操作部を有していてもよいし、音声による入力を可能とするマイクなどを有していてもよい。オペレータは、例えば、入力部８を操作することで、制御部１０の記憶部などに予め記憶されている、基板を処理するための手順を規定したレシピを、カセットＣ１（ロット）ごとに指定することができる。 The input unit 8 is located, for example, near the mounting table 11. The input unit 8 is, for example, a portion where the operator can select or input various information. The input unit 8 is composed of, for example, a touch panel. The input unit 8 may include an operation unit including buttons that can perform various operations such as pressing, or may include a microphone that enables voice input. The operator, for example, operates the input unit 8 to specify, for each cassette C1 (lot), a recipe that is stored in advance in the storage unit of the control unit 10 and that defines a procedure for processing a substrate. be able to.
　出力部９は、例えば、載置台１１の近くに位置している。この出力部９は、例えば、制御部１０の制御に応じて、各種の情報を出力することができる部分である。この出力部９は、例えば、各種の情報を可視的に出力可能な表示部および各種の情報を可聴的に出力可能なスピーカなどを含み得る。各種の情報には、例えば、基板処理装置１００の各種の状態を示す情報、および各種のアラーム（警報）を示す情報が含まれ得る。 The output unit 9 is located near the mounting table 11, for example. The output unit 9 is a unit that can output various kinds of information under the control of the control unit 10, for example. The output unit 9 may include, for example, a display unit capable of visually outputting various information and a speaker capable of audibly outputting various information. The various information may include, for example, information indicating various states of the substrate processing apparatus 100 and information indicating various alarms.
　上記構成を有する基板処理装置１００の動作は、例えば、図２で示されるように、制御部１０によって統括的に制御される。制御部１０は、例えば、演算部、メモリ、記憶部およびタイマなどを有する。 The operation of the substrate processing apparatus 100 having the above configuration is comprehensively controlled by the control unit 10 as shown in FIG. 2, for example. The control unit 10 has, for example, a calculation unit, a memory, a storage unit, a timer, and the like.
　演算部には、例えば、少なくとも１つのプロセッサとして働く中央演算部（ＣＰＵ）などの電気回路が適用される。 An electric circuit such as a central processing unit (CPU) that functions as at least one processor is applied to the processing unit.
　メモリには、例えば、ランダムアクセスメモリ（ＲＡＭ）などの情報を一時的に記憶する電気回路が適用される。演算部における各種の演算によって一時的に得られる各種の情報は、適宜メモリなどに記憶される。 As the memory, for example, an electric circuit such as a random access memory (RAM) that temporarily stores information is applied. Various types of information temporarily obtained by various types of computations in the computing unit are appropriately stored in the memory or the like.
　記憶部には、例えば、ハードディスクあるいはフラッシュメモリなどの各種の情報を記憶する不揮発性の記憶媒体が適用される。この記憶部には、例えば、複数種類のレシピならびにスケジュール作成プログラムおよび処理プログラムなど各種のプログラムが予め格納される。演算部は、例えば、記憶部に格納されたプログラムを読み込んで実行することで、制御部１０による基板処理装置１００の動作の統括的な制御を実行するための各種の機能的な構成を実現する。各種の機能的な構成には、例えば、基板処理装置１００における複数の基板Ｗに対する処理のスケジュールを作成するスケジューリング部およびスケジュールに沿った複数の基板Ｗに対する処理を実行する処理実行部などを含む。 For the storage unit, for example, a non-volatile storage medium that stores various information such as a hard disk or a flash memory is applied. Various programs such as a plurality of types of recipes and a schedule creation program and a processing program are stored in advance in this storage unit. The arithmetic unit realizes various functional configurations for executing the overall control of the operation of the substrate processing apparatus 100 by the control unit 10 by reading and executing the program stored in the storage unit, for example. .. The various functional configurations include, for example, a scheduling unit that creates a process schedule for a plurality of substrates W in the substrate processing apparatus 100, a process execution unit that performs a process on a plurality of substrates W according to the schedule, and the like.
　タイマは、例えば、各種の時間を計測することができる。タイマは、演算部で実現される機能的な構成であってもよい。 The timer can measure various times, for example. The timer may have a functional configuration realized by the arithmetic unit.
　制御部１０は、例えば、薬液処理部５２の各種のセンサ部５２ｓからの計測結果に応じて、第１液処理部５および第２液処理部６における各部の動作を制御してもよい。センサ部５２ｓには、例えば、後述する第１流量計Ｍ１、第２流量計Ｍ２、第３流量計Ｍ３および検出部Ｍ４などが含まれる。 The control unit 10 may control the operation of each unit in the first liquid processing unit 5 and the second liquid processing unit 6 according to the measurement results from the various sensor units 52s of the chemical liquid processing unit 52, for example. The sensor unit 52s includes, for example, a first flow meter M1, a second flow meter M2, a third flow meter M3, a detection unit M4, and the like, which will be described later.
　　＜１－２．薬液処理部＞
　図３は、薬液処理部５２の概略的な構成を示す図である。この薬液処理部５２は、例えば、酸化珪素の膜および窒化珪素の膜が形成された基板Ｗをエッチング液として機能する処理液としての燐酸水溶液中に浸漬させることで窒化珪素の膜を選択的に溶解させる処理（エッチング処理ともいう）を行う湿式エッチング処理装置である。 <1-2. Chemical processing unit>
FIG. 3 is a diagram showing a schematic configuration of the chemical liquid processing unit 52. The chemical liquid processing unit 52 selectively immerses the silicon nitride film by immersing the substrate W on which the silicon oxide film and the silicon nitride film are formed in a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid. It is a wet etching processing apparatus that performs a process of dissolving (also referred to as an etching process).
　図３で示されるように、薬液処理部５２は、調整槽ＣＢ１、第１液供給部ＳＬ１、第１液循環部ＣＬ１、薬液処理槽ＣＢ２、第２液供給部ＳＬ２、第２液循環部ＣＬ２、液排出部ＥＬ１および液補充部ＡＬ１を備えている。 As shown in FIG. 3, the chemical liquid treatment unit 52 includes an adjustment tank CB1, a first liquid supply unit SL1, a first liquid circulation unit CL1, a chemical liquid treatment tank CB2, a second liquid supply unit SL2, and a second liquid circulation unit CL2. , A liquid discharge part EL1 and a liquid replenishment part AL1.
　調整槽ＣＢ１は、例えば、薬液処理槽ＣＢ２に供給するための燐酸水溶液の温度などの調整を行うためのものである。調整槽ＣＢ１は、エッチング液として機能する処理液としての燐酸水溶液を貯留する第１内槽Ｂ１ａと、この第１内槽Ｂ１ａの上部からオーバーフローした燐酸水溶液を回収する第１外槽Ｂ１ｂと、によって構成される二重構造を有する。第１内槽Ｂ１ａは、例えば、燐酸水溶液に対する耐食性に優れた石英またはフッ素樹脂材料で形成された平面視矩形の箱形形状を有する部材である。第１外槽Ｂ１ｂは、例えば、第１内槽Ｂ１ａと同様な材料で形成されており、第１内槽Ｂ１ａの外周上端部を囲繞するように位置している。 The adjusting tank CB1 is for adjusting, for example, the temperature of the phosphoric acid aqueous solution to be supplied to the chemical liquid processing tank CB2. The adjusting tank CB1 includes a first inner tank B1a that stores a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid, and a first outer tank B1b that collects the phosphoric acid aqueous solution overflowing from the upper portion of the first inner tank B1a. It has a constructed double structure. The first inner tank B1a is, for example, a member having a rectangular box shape in a plan view, which is formed of quartz or a fluororesin material having excellent corrosion resistance against a phosphoric acid aqueous solution. The first outer tank B1b is made of, for example, the same material as that of the first inner tank B1a, and is positioned so as to surround the outer peripheral upper end portion of the first inner tank B1a.
　第１液供給部ＳＬ１は、例えば、処理液供給源Ｅｎ０から送られる新たな処理液を、第１配管部Ｔｂ１を介して調整槽ＣＢ１に供給する処理（第１液供給処理ともいう）を実行することができる。ここでは、例えば、処理液として、エッチング液として機能する薬液である燐酸水溶液の新液（使用前燐酸水溶液ともいう）が供給される。処理液供給源Ｅｎ０は、第１配管部Ｔｂ１の第１端部に連通するように接続している。この処理液供給源Ｅｎ０は、例えば、基板処理装置１００の内部あるいは外部に設置された燐酸水溶液を常温（例えば、２５℃）で貯留しているタンクから第１配管部Ｔｂ１に向けてポンプあるいはガスなどで燐酸水溶液を圧送する。第１配管部Ｔｂ１には、第１流量制御部Ｃｆ１が設けられている。第１流量制御部Ｃｆ１は、例えば、第１配管部Ｔｂ１の流路を開閉する第１バルブＶ１と、燐酸水溶液の流量を計測する第１流量計Ｍ１とを有する。第１配管部Ｔｂ１の第２端部は、例えば、調整槽ＣＢ１の第１外槽Ｂ１ｂに連通するように接続している。第１液供給部ＳＬ１では、例えば、処理液供給源Ｅｎ０から供給される燐酸水溶液は、第１配管部Ｔｂ１を通って、第１流量制御部Ｃｆ１によって設定された流量で第１外槽Ｂ１ｂに供給される。 The first liquid supply unit SL1 executes, for example, a process (also referred to as a first liquid supply process) of supplying a new processing liquid sent from the processing liquid supply source En0 to the adjustment tank CB1 via the first piping unit Tb1. can do. Here, for example, a new solution of a phosphoric acid aqueous solution (also referred to as a pre-use phosphoric acid aqueous solution), which is a chemical that functions as an etching solution, is supplied as the processing liquid. The processing liquid supply source En0 is connected so as to communicate with the first end of the first piping portion Tb1. The processing liquid supply source En0 is, for example, a pump or a gas directed from the tank storing the phosphoric acid aqueous solution installed inside or outside the substrate processing apparatus 100 at room temperature (for example, 25 ° C.) toward the first piping portion Tb1. The phosphoric acid aqueous solution is pressure-fed. The 1st piping part Tb1 is provided with the 1st flow control part Cf1. The first flow rate control unit Cf1 has, for example, a first valve V1 that opens and closes the flow path of the first piping unit Tb1, and a first flow meter M1 that measures the flow rate of the phosphoric acid aqueous solution. The 2nd end part of the 1st piping part Tb1 is connected so that it may connect with the 1st outer tank B1b of adjustment tank CB1, for example. In the first liquid supply unit SL1, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 passes through the first piping unit Tb1 and flows into the first outer tank B1b at the flow rate set by the first flow rate control unit Cf1. Supplied.
　第１液循環部ＣＬ１は、例えば、調整槽ＣＢ１から排出された燐酸水溶液を加熱して再び調整槽ＣＢ１に圧送環流させる処理（第１液循環処理ともいう）を実行することができる。第１液循環部ＣＬ１は、例えば、第１外槽Ｂ１ｂと第１内槽Ｂ１ａとを連通するように接続している第２配管部Ｔｂ２を有する。第２配管部Ｔｂ２は、例えば、第１外槽Ｂ１ｂの底部に連通するように接続している第１端部と、第１内槽Ｂ１ａの底部に連通するように接続している第２端部と、を有する。第２配管部Ｔｂ２には、上流側から順に第２バルブＶ２、第１ポンプＰｍ１および第１ヒータＨｔ１が設けられている。第２バルブＶ２は、第２配管部Ｔｂ２の流路を開閉する。第１ポンプＰｍ１は、第２配管部Ｔｂ２を介して第１外槽Ｂ１ｂから汲み出した燐酸水溶液を第１内槽Ｂ１ａに向けて圧送する。第１ヒータＨｔ１は、第２配管部Ｔｂ２を流れる燐酸水溶液を所定の温度（例えば、約１６０℃）に加熱する。また、第１液循環部ＣＬ１は、例えば、第１内槽Ｂ１ａから排出された燐酸水溶液を加熱して第１内槽Ｂ１ａに環流させる第３配管部Ｔｂ３を有していてもよい。例えば、第３配管部Ｔｂ３が、第１内槽Ｂ１ａに連通するように接続している第１端部と、第２配管部Ｔｂ２のうちの第２バルブＶ２と第１ポンプＰｍ１との間の部分に連通するように接続している第２端部と、を有する形態が採用される。ここでは、第３配管部Ｔｂ３が、第２配管部Ｔｂ２に合流するような形態で位置している。第３配管部Ｔｂ３には第３バルブＶ３が設けられ、この第３バルブＶ３は第３配管部Ｔｂ３の流路を開閉する。 The first liquid circulation unit CL1 can perform, for example, a process (also referred to as a first liquid circulation process) of heating the phosphoric acid aqueous solution discharged from the adjusting tank CB1 and causing it to recirculate to the adjusting tank CB1 under pressure. The first liquid circulation unit CL1 has, for example, a second piping unit Tb2 that connects the first outer tank B1b and the first inner tank B1a so as to communicate with each other. The second piping part Tb2 is, for example, a first end connected to communicate with the bottom of the first outer tank B1b and a second end connected to communicate with the bottom of the first inner tank B1a. And a section. A second valve V2, a first pump Pm1 and a first heater Ht1 are provided in this order from the upstream side in the second piping portion Tb2. The second valve V2 opens and closes the flow path of the second piping portion Tb2. The first pump Pm1 pumps the phosphoric acid aqueous solution pumped out from the first outer tank B1b through the second piping portion Tb2 toward the first inner tank B1a. The first heater Ht1 heats the phosphoric acid aqueous solution flowing through the second pipe portion Tb2 to a predetermined temperature (for example, about 160 ° C.). In addition, the first liquid circulation unit CL1 may include, for example, a third piping unit Tb3 that heats the phosphoric acid aqueous solution discharged from the first inner tank B1a and circulates it to the first inner tank B1a. For example, the third pipe portion Tb3 is provided between the first end portion connected to communicate with the first inner tank B1a and the second valve V2 of the second pipe portion Tb2 and the first pump Pm1. And a second end connected so as to communicate with the portion. Here, the third piping portion Tb3 is positioned so as to join the second piping portion Tb2. A third valve V3 is provided in the third piping portion Tb3, and the third valve V3 opens and closes the flow path of the third piping portion Tb3.
　薬液処理槽ＣＢ２は、例えば、エッチング液として機能する処理液としての燐酸水溶液によって基板Ｗに対するエッチング処理を行う部分（処理部ともいう）である。薬液処理槽ＣＢ２は、例えば、調整槽ＣＢ１と同様に、エッチング液としての燐酸水溶液を貯留し、燐酸水溶液中に基板Ｗを浸漬させる第２内槽Ｂ２ａと、この第２内槽Ｂ２ａの上部からオーバーフローした燐酸水溶液を回収する第２外槽Ｂ２ｂと、によって構成される二重構造を有する。第２内槽Ｂ２ａは、例えば、第１内槽Ｂ１ａと同様に、例えば、燐酸水溶液に対する耐食性に優れた石英またはフッ素樹脂材料で形成された平面視矩形の箱形形状の部材である。薬液処理槽ＣＢ２において貯留可能な液の総量（容量）は、例えば、６０リットル程度に設定される。第２外槽Ｂ２ｂも、例えば、第１外槽Ｂ１ｂと同様に、第２内槽Ｂ２ａと同様な材料で形成されており、第２内槽Ｂ２ａの外周上端部を囲繞するように位置している。 The chemical liquid processing bath CB2 is a portion (also referred to as a processing unit) that performs etching processing on the substrate W with, for example, a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid. Similar to the adjustment bath CB1, for example, the chemical treatment bath CB2 stores a phosphoric acid aqueous solution as an etching solution and dips the substrate W in the phosphoric acid aqueous solution, and a second inner bath B2a from above the second inner bath B2a. It has a double structure composed of a second outer tank B2b for collecting the overflowed phosphoric acid aqueous solution. Like the first inner tank B1a, the second inner tank B2a is, for example, a box-shaped member having a rectangular shape in plan view formed of quartz or a fluororesin material having excellent corrosion resistance to an aqueous phosphoric acid solution. The total amount (capacity) of the liquid that can be stored in the chemical liquid processing tank CB2 is set to, for example, about 60 liters. Similarly to the first outer tank B1b, the second outer tank B2b is also made of the same material as the second inner tank B2a, and is positioned so as to surround the outer peripheral upper end of the second inner tank B2a. There is.
　また、薬液処理槽ＣＢ２には、薬液処理槽ＣＢ２に貯留された燐酸水溶液に基板Ｗを浸漬させるためのリフターＬＦ２が設けられている。リフターＬＦ２は、例えば、起立姿勢（基板主面の法線が水平方向に沿う姿勢）で相互に平行に配列された複数（例えば、５０枚）の基板Ｗを３本の保持棒によって一括して保持する。リフターＬＦ２は、図示を省略する昇降機構によって鉛直方向に沿って昇降可能に設けられている。このリフターＬＦ２は、例えば、保持している複数枚の基板Ｗを、第２内槽Ｂ２ａ内の燐酸水溶液中に浸漬させる処理位置（図３の位置）と、燐酸水溶液から引き上げた受渡位置と、の間で昇降させる。薬液処理槽ＣＢ２では、例えば、第２内槽Ｂ２ａ内の処理位置に複数枚の基板Ｗを位置させて燐酸水溶液中に浸漬させることで、燐酸水溶液によって基板Ｗの窒化珪素の膜を溶解させるエッチング処理を行うことができる。このとき、第２内槽Ｂ２ａに貯留される燐酸水溶液に、基板Ｗから基板Ｗを構成する成分（基板成分ともいう）としてのシリコンが溶出する。 Further, the chemical treatment tank CB2 is provided with a lifter LF2 for immersing the substrate W in the phosphoric acid aqueous solution stored in the chemical treatment tank CB2. The lifter LF2 collectively includes, for example, a plurality of (for example, 50) substrates W arranged in parallel in a standing posture (a posture in which the normal line of the main surface of the substrate is along the horizontal direction) by three holding bars. Hold. The lifter LF2 is provided so as to be able to move up and down along the vertical direction by an elevator mechanism (not shown). The lifter LF2 has, for example, a processing position (a position shown in FIG. 3) in which the plurality of held substrates W are immersed in the phosphoric acid aqueous solution in the second inner tank B2a, and a delivery position pulled up from the phosphoric acid aqueous solution. Raise and lower between. In the chemical treatment bath CB2, for example, by etching a plurality of substrates W at a treatment position in the second inner bath B2a and immersing them in a phosphoric acid aqueous solution, the silicon nitride film on the substrate W is dissolved by the phosphoric acid aqueous solution. Processing can be performed. At this time, silicon as a component (also referred to as a substrate component) of the substrate W is eluted from the substrate W into the phosphoric acid aqueous solution stored in the second inner tank B2a.
　第２液供給部ＳＬ２は、例えば、処理部としての薬液処理槽ＣＢ２にエッチング液として機能する処理液としての使用前燐酸水溶液を供給する処理（第２液供給処理ともいう）を実行することができる。この第２液供給部ＳＬ２は、例えば、液供給管部としての第４配管部Ｔｂ４を有し、調整槽ＣＢ１から送られる燐酸水溶液を、第４配管部Ｔｂ４を介して薬液処理槽ＣＢ２に供給することができる。第４配管部Ｔｂ４は、例えば、第２配管部Ｔｂ２のうちの第１ヒータＨｔ１と調整槽ＣＢ１との間の部分に連通するように接続している第１端部と、第２外槽Ｂ２ｂに連通するように接続している第２端部と、を有する。換言すれば、第４配管部Ｔｂ４は、第２配管部Ｔｂ２が分岐した配管部である。第４配管部Ｔｂ４では、例えば、第１ポンプＰｍ１によって燐酸水溶液が第１端部から第２端部に向けて圧送される。第４配管部Ｔｂ４には、第２流量制御部Ｃｆ２が設けられている。第２流量制御部Ｃｆ２は、例えば、燐酸水溶液の流路を開閉する第４バルブＶ４と、燐酸水溶液の流量を計測する第２流量計Ｍ２とを有する。第２液供給部ＳＬ２では、例えば、調整槽ＣＢ１から供給される燐酸水溶液は、第４配管部Ｔｂ４を通って、第２流量制御部Ｃｆ２によって設定された流量で第２外槽Ｂ２ｂに供給される。 The second liquid supply unit SL2 can execute, for example, a process (also referred to as a second liquid supply process) of supplying a pre-use phosphoric acid aqueous solution as a processing liquid functioning as an etching liquid to the chemical liquid processing tank CB2 as the processing unit. it can. The second liquid supply unit SL2 has, for example, a fourth piping unit Tb4 as a liquid supply pipe unit, and supplies the phosphoric acid aqueous solution sent from the adjusting tank CB1 to the chemical liquid processing tank CB2 via the fourth piping unit Tb4. can do. The fourth piping portion Tb4 is, for example, a first end portion connected to communicate with a portion of the second piping portion Tb2 between the first heater Ht1 and the adjustment tank CB1, and a second outer tank B2b. And a second end connected to communicate with. In other words, the fourth piping portion Tb4 is a piping portion branched from the second piping portion Tb2. In the fourth piping portion Tb4, for example, the phosphoric acid aqueous solution is pressure-fed from the first end portion to the second end portion by the first pump Pm1. The second flow rate control unit Cf2 is provided in the fourth piping unit Tb4. The second flow rate control unit Cf2 includes, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter M2 that measures the flow rate of the phosphoric acid aqueous solution. In the second liquid supply unit SL2, for example, the phosphoric acid aqueous solution supplied from the adjustment tank CB1 is supplied to the second outer tank B2b at the flow rate set by the second flow rate control unit Cf2 through the fourth piping unit Tb4. It
　第２液循環部ＣＬ２は、例えば、薬液処理槽ＣＢ２から排出された燐酸水溶液を加熱して再び薬液処理槽ＣＢ２に圧送環流させる処理（第２液循環処理ともいう）を実行することができる。第２液循環部ＣＬ２は、例えば、第２外槽Ｂ２ｂと第２内槽Ｂ２ａとを連通するように接続している第５配管部Ｔｂ５を有する。例えば、第５配管部Ｔｂ５は、第２外槽Ｂ２ｂの底部に連通するように接続している第１端部と、第２内槽Ｂ２ａの底部に連通するように接続している第２端部と、を有する。第５配管部Ｔｂ５には、上流側から順に第５バルブＶ５、第２ポンプＰｍ２、第６バルブＶ６、第２ヒータＨｔ２およびフィルタＦｌ１が設けられている。第５バルブＶ５は、第５配管部Ｔｂ５の流路を開閉する。第２ポンプＰｍ２は、第５配管部Ｔｂ５を介して第２外槽Ｂ２ｂから汲み出した燐酸水溶液を第２内槽Ｂ２ａに向けて圧送する。第６バルブＶ６は、第５配管部Ｔｂ５の流路を開閉する。第２ヒータＨｔ２は、第５配管部Ｔｂ５を流れる燐酸水溶液を所定の温度（例えば、約１６０℃）に加熱する。フィルタＦｌ１は、第５配管部Ｔｂ５を流れる燐酸水溶液中の異物を取り除くための濾過フィルタである。また、第２液循環部ＣＬ２は、例えば、第２内槽Ｂ２ａから排出された燐酸水溶液を加熱して第２内槽Ｂ２ａに環流させる第６配管部Ｔｂ６を有していてもよい。この場合には、例えば、第６配管部Ｔｂ６は、第２内槽Ｂ２ａに連通するように接続している第１端部と、第５配管部Ｔｂ５のうちの第５バルブＶ５と第２ポンプＰｍ２との間の部分に連通するように接続している第２端部と、を有する形態が採用される。第６配管部Ｔｂ６には第７バルブＶ７が設けられ、この第７バルブＶ７は第６配管部Ｔｂ６の流路を開閉する。 The second liquid circulation unit CL2 can execute, for example, a process (also referred to as a second liquid circulation process) of heating the phosphoric acid aqueous solution discharged from the chemical liquid treatment tank CB2 and causing the chemical liquid treatment tank CB2 to reflow under pressure. The second liquid circulation unit CL2 has, for example, a fifth piping unit Tb5 that connects the second outer tank B2b and the second inner tank B2a so as to communicate with each other. For example, the fifth pipe portion Tb5 is connected to the bottom of the second outer tank B2b so as to communicate with the bottom thereof, and is connected to the bottom of the second inner tank B2a at the second end thereof. And a section. The fifth pipe portion Tb5 is provided with a fifth valve V5, a second pump Pm2, a sixth valve V6, a second heater Ht2 and a filter Fl1 in this order from the upstream side. The fifth valve V5 opens and closes the flow path of the fifth piping portion Tb5. The second pump Pm2 pumps the phosphoric acid aqueous solution pumped out from the second outer tank B2b through the fifth pipe portion Tb5 toward the second inner tank B2a. The sixth valve V6 opens and closes the flow path of the fifth piping portion Tb5. The second heater Ht2 heats the phosphoric acid aqueous solution flowing through the fifth pipe portion Tb5 to a predetermined temperature (for example, about 160 ° C.). The filter Fl1 is a filtration filter for removing foreign matters in the phosphoric acid aqueous solution flowing through the fifth pipe portion Tb5. In addition, the second liquid circulation unit CL2 may include, for example, a sixth piping unit Tb6 that heats the phosphoric acid aqueous solution discharged from the second inner tank B2a and circulates it to the second inner tank B2a. In this case, for example, the sixth piping portion Tb6 includes a first end portion connected to communicate with the second inner tank B2a, a fifth valve V5 of the fifth piping portion Tb5, and a second pump. And a second end portion connected so as to communicate with a portion between Pm2 and Pm2. A seventh valve V7 is provided in the sixth piping portion Tb6, and the seventh valve V7 opens and closes the flow path of the sixth piping portion Tb6.
　液排出部ＥＬ１は、例えば、処理部としての薬液処理槽ＣＢ２において基板Ｗに対するエッチング処理に使用された後の処理液（第１処理液ともいう）としての燐酸水溶液（使用済み燐酸水溶液とも第１の燐酸水溶液ともいう）を、薬液処理槽ＣＢ２から基板処理装置１００の外まで排出する処理（液排出処理ともいう）を実行する部分である。使用済み燐酸水溶液は、薬液処理槽ＣＢ２における基板Ｗのエッチング処理によって、使用前の燐酸水溶液よりも基板成分（例えば、シリコン）が溶解している濃度（溶解濃度ともいう）が高い状態にある。液排出部ＥＬ１は、例えば、第７配管部Ｔｂ７、第８配管部Ｔｂ８、冷却タンクＣｔ１および第９配管部Ｔｂ９を有する。ここでは、第７配管部Ｔｂ７、第８配管部Ｔｂ８および第９配管部Ｔｂ９は、薬液処理槽ＣＢ２から基板処理装置１００の外まで使用済み燐酸水溶液を排出するための部分（液排出管部ともいう）Ｔｇ１を構成している。 The liquid discharge part EL1 is, for example, a phosphoric acid aqueous solution (also referred to as a used phosphoric acid aqueous solution used as a processing liquid (also referred to as a first processing liquid)) after being used for etching the substrate W in the chemical liquid processing bath CB2 serving as a processing part. (Also referred to as a phosphoric acid aqueous solution) is discharged from the chemical treatment tank CB2 to the outside of the substrate processing apparatus 100 (also referred to as a liquid discharge treatment). The used phosphoric acid aqueous solution has a higher concentration (also referred to as a dissolution concentration) in which the substrate component (for example, silicon) is dissolved than the phosphoric acid aqueous solution before use due to the etching treatment of the substrate W in the chemical solution treatment tank CB2. The liquid discharge part EL1 has, for example, a seventh piping part Tb7, an eighth piping part Tb8, a cooling tank Ct1 and a ninth piping part Tb9. Here, the seventh piping portion Tb7, the eighth piping portion Tb8, and the ninth piping portion Tb9 are portions for discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 (both the liquid discharging pipe portion). It means Tg1.
　第７配管部Ｔｂ７は、例えば、第５配管部Ｔｂ５のうちの第２ポンプＰｍ２と第６バルブＶ６との間の部分に連通するように接続している第１端部と、冷却タンクＣｔ１に連通するように接続している第２端部と、を有する。換言すれば、第７配管部Ｔｂ７は、第５配管部Ｔｂ５とともに薬液処理槽ＣＢ２と冷却タンクＣｔ１とを接続している部分（第１部分ともいう）を構成している。第７配管部Ｔｂ７には第８バルブＶ８が設けられている。第８バルブＶ８は、第７配管部Ｔｂ７の流路を開閉する。このため、第６バルブＶ６および第８バルブＶ８の開閉を適宜制御することで、薬液処理槽ＣＢ２から排出された燐酸水溶液を加熱して再び薬液処理槽ＣＢ２に圧送環流する処理（第２液循環処理）と、使用済み燐酸水溶液を薬液処理槽ＣＢ２から冷却タンクＣｔ１を経由して基板処理装置１００の外に排出する処理（液排出処理）と、を選択的に実行させることができる。 The seventh piping portion Tb7 is connected to, for example, a first end portion of the fifth piping portion Tb5 that is connected to communicate with a portion between the second pump Pm2 and the sixth valve V6, and the cooling tank Ct1. A second end that is connected in communication. In other words, the seventh piping portion Tb7 constitutes a portion (also referred to as a first portion) that connects the chemical liquid processing tank CB2 and the cooling tank Ct1 together with the fifth piping portion Tb5. An eighth valve V8 is provided in the seventh piping portion Tb7. The eighth valve V8 opens and closes the flow path of the seventh piping portion Tb7. Therefore, by appropriately controlling the opening and closing of the sixth valve V6 and the eighth valve V8, the phosphoric acid aqueous solution discharged from the chemical solution processing tank CB2 is heated and pressure-fed again to the chemical solution processing tank CB2 (second liquid circulation It is possible to selectively execute the processing) and the processing of discharging the used phosphoric acid aqueous solution from the chemical processing tank CB2 to the outside of the substrate processing apparatus 100 via the cooling tank Ct1 (liquid discharging processing).
　第８配管部Ｔｂ８は、例えば、薬液処理槽ＣＢ２の第２外槽Ｂ２ｂの上部に連通するように接続している第１端部と、冷却タンクＣｔ１に連通するように接続している第２端部と、を有する。換言すれば、第８配管部Ｔｂ８は、薬液処理槽ＣＢ２と冷却タンクＣｔ１とを接続している部分（第１部分ともいう）を構成している。ここでは、第８配管部Ｔｂ８は、例えば、薬液処理槽ＣＢ２の第２外槽Ｂ２ｂに貯留されている燐酸水溶液の貯留量が増加し過ぎた際に、第２外槽Ｂ２ｂから燐酸水溶液が溢れ出さないように、第２外槽Ｂ２ｂから冷却タンクＣｔ１に燐酸水溶液を流すことができる。また、例えば、調整槽ＣＢ１の第１外槽Ｂ１ｂに貯留されている燐酸水溶液の貯留量が増加し過ぎた際に、第１外槽Ｂ１ｂから燐酸水溶液が溢れ出さないように、第１外槽Ｂ１ｂから冷却タンクＣｔ１に燐酸水溶液を流すことができる第１０配管Ｔｂ１０が設けられてもよい。この場合には、第１０配管Ｔｂ１０は、調整槽ＣＢ１の第１外槽Ｂ１ｂの上部に連通するように接続している第１端部と、第８配管部Ｔｂ８に合流するような形態で連通するように接続している第２端部と、を有する。 The eighth piping portion Tb8 is, for example, a first end portion that is connected to communicate with the upper portion of the second outer tank B2b of the chemical liquid processing tank CB2 and a second end that is connected to the cooling tank Ct1. And an end portion. In other words, the eighth piping portion Tb8 constitutes a portion (also referred to as a first portion) that connects the chemical liquid processing tank CB2 and the cooling tank Ct1. Here, in the eighth piping portion Tb8, for example, when the storage amount of the phosphoric acid aqueous solution stored in the second outer tank B2b of the chemical liquid processing tank CB2 increases too much, the phosphoric acid aqueous solution overflows from the second outer tank B2b. The phosphoric acid aqueous solution can be caused to flow from the second outer tank B2b to the cooling tank Ct1 so as not to come out. Further, for example, when the storage amount of the phosphoric acid aqueous solution stored in the first outer tank B1b of the adjusting tank CB1 is excessively increased, the first outer tank B1b is prevented from overflowing the phosphoric acid aqueous solution. A tenth pipe Tb10 capable of flowing the phosphoric acid aqueous solution from B1b to the cooling tank Ct1 may be provided. In this case, the tenth pipe Tb10 communicates with the first end portion of the adjusting tank CB1 that is connected to communicate with the upper portion of the first outer tank B1b so as to join the eighth pipe portion Tb8. And a second end portion connected to each other.
　冷却タンクＣｔ１は、使用済み燐酸水溶液を貯留して冷却することができる。冷却タンクＣｔ１には、この冷却タンクＣｔ１に貯留されている液の貯留量を検出するための検出部Ｍ４が設けられている。検出部Ｍ４には、例えば、液面計などが適用される。 The cooling tank Ct1 can store and cool the used phosphoric acid aqueous solution. The cooling tank Ct1 is provided with a detection unit M4 for detecting the storage amount of the liquid stored in the cooling tank Ct1. For example, a liquid level gauge is applied to the detection unit M4.
　第９配管部Ｔｂ９は、例えば、冷却タンクＣｔ１に接続しており、基板処理装置１００の外まで使用済み燐酸水溶液を排出するための部分（第２部分ともいう）を構成している。第９配管部Ｔｂ９は、例えば、冷却タンクＣｔ１に接続している第１端部と、使用済みの燐酸水溶液を基板処理装置１００の外に出力するための部分（処理液出力部ともいう）Ｅｘ０に接続している第２端部と、を有する。処理液出力部Ｅｘ０には、例えば、基板処理装置１００に対して着脱可能な燐酸水溶液を回収するためのタンク（回収タンクともいう）もしくは燐酸水溶液を廃液するためのタンク（排液タンクともいう）あるいは工場排水用の処理施設に接続するための排液管などが適用される。第９配管部Ｔｂ９には、例えば、第９バルブＶ９が設けられている。第９バルブＶ９は、第９配管部Ｔｂ９の流路を開閉することができる。ここでは、第９バルブＶ９によって、冷却タンクＣｔ１から処理液出力部Ｅｘ０への燐酸水溶液の出力が調整され得る。 The ninth piping portion Tb9 is connected to, for example, the cooling tank Ct1 and constitutes a portion (also referred to as a second portion) for discharging the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100. The ninth piping portion Tb9 is, for example, a first end portion connected to the cooling tank Ct1 and a portion (also referred to as a treatment liquid output portion) Ex0 for outputting the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100. And a second end connected to. The processing liquid output unit Ex0 is, for example, a tank (also called a recovery tank) that is detachable from the substrate processing apparatus 100 and that collects the phosphoric acid aqueous solution or a tank that drains the phosphoric acid aqueous solution (also called a drainage tank). Alternatively, a drainage pipe or the like for connecting to a treatment facility for factory wastewater is applied. The ninth pipe portion Tb9 is provided with, for example, a ninth valve V9. The ninth valve V9 can open and close the flow path of the ninth piping portion Tb9. Here, the output of the phosphoric acid aqueous solution from the cooling tank Ct1 to the processing liquid output unit Ex0 can be adjusted by the ninth valve V9.
　液補充部ＡＬ１は、例えば、処理液供給源Ｅｎ０から液排出部ＥＬ１に第２処理液としての使用前燐酸水溶液（第２の燐酸水溶液ともいう）を補充する処理（液補充処理ともいう）を実行することができる。これにより、第１処理液としての使用済み燐酸水溶液と、第２処理液としての使用前燐酸水溶液と、を混ぜて、混合溶液としての燐酸水溶液（混合燐酸水溶液ともいう）を生成することができる。ここでは、使用前燐酸水溶液は、使用済み燐酸水溶液よりも、基板成分（例えば、シリコン）の溶解濃度が低い状態にある。このため、混合燐酸水溶液は、使用済み燐酸水溶液よりも基板成分（例えば、シリコン）の溶解濃度が低い状態となる。換言すれば、液補充部ＡＬ１によって、液排出部ＥＬ１に使用前燐酸水溶液が補充されることで、液排出部ＥＬ１において排出する使用済み燐酸水溶液を、基板成分の溶解濃度を低減した混合燐酸水溶液として、冷却タンクＣｔ１から第９配管部Ｔｂ９を介して処理液出力部Ｅｘ０に送ることができる。液補充部ＡＬ１は、例えば、液排出部ＥＬ１に接続された液補充管部としての第１１配管部Ｔｂ１１を有する。第１１配管部Ｔｂ１１は、例えば、処理液供給源Ｅｎ０に接続された第１端部と、第８配管部Ｔｂ８に合流するような形態で連通するように接続された第２端部と、を有する。第１１配管部Ｔｂ１１には、第３流量制御部Ｃｆ３が設けられている。第３流量制御部Ｃｆ３は、例えば、第１１配管部Ｔｂ１１の流路を開閉する第１０バルブＶ１０と、燐酸水溶液の流量を計測する第３流量計Ｍ３とを有する。 The liquid replenishment unit AL1 performs, for example, a process (also referred to as a liquid replenishment process) of replenishing the pre-use phosphoric acid aqueous solution (also referred to as a second phosphoric acid aqueous solution) as the second treatment liquid from the treatment liquid supply source En0 to the liquid discharge unit EL1. Can be executed. Thereby, the used phosphoric acid aqueous solution as the first treatment liquid and the pre-use phosphoric acid aqueous solution as the second treatment liquid can be mixed to generate a phosphoric acid aqueous solution as a mixed solution (also referred to as a mixed phosphoric acid aqueous solution). .. Here, the phosphoric acid aqueous solution before use is in a state in which the dissolved concentration of the substrate component (for example, silicon) is lower than that of the used phosphoric acid aqueous solution. Therefore, the mixed phosphoric acid aqueous solution has a lower dissolved concentration of the substrate component (for example, silicon) than the used phosphoric acid aqueous solution. In other words, the solution replenishment unit AL1 replenishes the solution discharge unit EL1 with the before-use phosphoric acid aqueous solution, so that the used phosphoric acid solution discharged in the liquid discharge unit EL1 is mixed phosphoric acid solution with a reduced concentration of the substrate components. As a result, it can be sent from the cooling tank Ct1 to the treatment liquid output unit Ex0 via the ninth pipe portion Tb9. The liquid replenishment section AL1 has, for example, an eleventh piping section Tb11 as a liquid replenishment tube section connected to the liquid discharge section EL1. The eleventh piping portion Tb11 includes, for example, a first end portion connected to the treatment liquid supply source En0 and a second end portion connected so as to communicate with the eighth piping portion Tb8 in such a manner as to join. Have. The 11th piping part Tb11 is provided with the 3rd flow control part Cf3. The third flow rate control unit Cf3 includes, for example, a tenth valve V10 that opens and closes the flow path of the eleventh piping unit Tb11, and a third flow meter M3 that measures the flow rate of the phosphoric acid aqueous solution.
　上述した薬液処理部５２の各部の動作は、制御部１０によって制御することができる。例えば、制御部１０によれば、第１液供給部ＳＬ１によって調整槽ＣＢ１へ第２処理液としての使用前燐酸水溶液を供給する処理（第１液供給処理）と、第１液循環部ＣＬ１によって燐酸水溶液を循環させる処理（第１液循環処理）と、第２液供給部ＳＬ２によって薬液処理槽ＣＢ２へ使用前燐酸水溶液を供給する処理（第２液供給処理）と、第２液循環部ＣＬ２によって燐酸水溶液を循環させる処理（第２液循環処理）と、液排出部ＥＬ１によって薬液処理槽ＣＢ２から第１処理液としての使用済み燐酸水溶液を排出する処理（液排出処理）と、液補充部ＡＬ１によって液排出部ＥＬ１へ第２処理液としての使用前燐酸水溶液を補充する処理（液補充処理）と、を制御することができる。 The operation of each unit of the above-described chemical liquid processing unit 52 can be controlled by the control unit 10. For example, according to the control unit 10, the first liquid supply unit SL1 supplies the pre-use phosphoric acid aqueous solution as the second processing liquid to the adjustment tank CB1 (first liquid supply process) and the first liquid circulation unit CL1. A process of circulating the phosphoric acid aqueous solution (first liquid circulation process), a process of supplying the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2 by the second liquid supply unit SL2 (second liquid supply process), and a second liquid circulation unit CL2. To circulate the phosphoric acid aqueous solution (second liquid circulation process), to discharge the spent phosphoric acid aqueous solution as the first processing liquid from the chemical liquid processing tank CB2 by the liquid discharge part EL1 (liquid discharge process), and a liquid replenishment part. With AL1, it is possible to control the process of replenishing the solution discharge part EL1 with the pre-use phosphoric acid aqueous solution as the second process liquid (liquid replenishing process).
　なお、例えば、第２内槽Ｂ２ａの内壁に沿うように設けられた濃度計が、第２内槽Ｂ２ａ内に貯留された燐酸水溶液中に溶出した基板Ｗの特定物質の溶解濃度を検出し、この検出結果としての溶解濃度に応じて、制御部１０が、第８バルブＶ８および第９バルブＶ９を開閉して、使用済み燐酸水溶液を適宜処理液出力部Ｅｘ０に送出してもよい。 Note that, for example, a densitometer provided along the inner wall of the second inner tank B2a detects the dissolved concentration of the specific substance of the substrate W eluted in the phosphoric acid aqueous solution stored in the second inner tank B2a, The control unit 10 may open and close the eighth valve V8 and the ninth valve V9 in accordance with the dissolved concentration as the detection result to appropriately send the used phosphoric acid aqueous solution to the processing liquid output unit Ex0.
　上記構成を有する基板処理装置１００では、例えば、処理部としての薬液処理槽ＣＢ２から基板処理装置１００の外に第１処理液としての使用済み燐酸水溶液を排出する際に、この第１処理液としての使用済み燐酸水溶液に、基板成分（例えばシリコン）の溶解濃度が相対的に低い第２処理液としての使用前燐酸水溶液を混ぜて排出することができる。これにより、例えば、第１処理液としての使用済み燐酸水溶液が冷却タンクＣｔ１で冷却されても、処理部としての薬液処理槽ＣＢ２から基板処理装置１００の外へ処理液としての燐酸水溶液を排出する経路において、処理液としての燐酸水溶液における基板Ｗからの溶出成分の結晶化（例えば、シロキサンの結晶化）が生じにくい。 In the substrate processing apparatus 100 having the above configuration, for example, when the used phosphoric acid aqueous solution as the first processing liquid is discharged from the chemical liquid processing tank CB2 as the processing unit to the outside of the substrate processing apparatus 100, the first processing liquid is used as the first processing liquid. It is possible to mix and discharge the used phosphoric acid aqueous solution before use as the second processing liquid in which the dissolved concentration of the substrate component (eg, silicon) is relatively low. Thereby, for example, even if the used phosphoric acid aqueous solution as the first processing liquid is cooled in the cooling tank Ct1, the phosphoric acid aqueous solution as the processing liquid is discharged from the chemical liquid processing tank CB2 as the processing unit to the outside of the substrate processing apparatus 100. In the route, crystallization of the components eluted from the substrate W in the phosphoric acid aqueous solution as the treatment liquid (for example, crystallization of siloxane) is unlikely to occur.
　また、基板処理装置１００では、液補充部ＡＬ１によって、第２処理液として使用前燐酸水溶液が第１処理液としての使用済み燐酸水溶液に混ぜることで生成される混合溶液としての混合燐酸水溶液が、基板成分（例えば、シリコン）の溶解度未満の溶解濃度を有するようにすることができる。このような濃度の設計は、例えば、使用済み燐酸水溶液における基板成分の溶解濃度の予測値あるいは実測値と、第１処理液と第２処理液との混合比と、に基づいて実現され得る。 Further, in the substrate processing apparatus 100, the solution replenishing unit AL1 generates a mixed phosphoric acid aqueous solution as a mixed solution, which is generated by mixing the used phosphoric acid aqueous solution as the second processing liquid with the used phosphoric acid aqueous solution as the first processing liquid. It may have a solubility concentration that is less than the solubility of the substrate component (eg, silicon). Such a design of the concentration can be realized based on, for example, a predicted value or an actually measured value of the dissolved concentration of the substrate component in the used phosphoric acid aqueous solution, and the mixing ratio of the first processing liquid and the second processing liquid.
　　＜１－３．基板処理装置の動作＞
　次に、上記の構成を有する基板処理装置１００における動作について説明する。 <1-3. Operation of substrate processing equipment>
Next, the operation of the substrate processing apparatus 100 having the above configuration will be described.
　　　＜１－３－１．エッチング処理に係る動作フロー＞
　図４は、基板処理装置１００における基板Ｗのエッチング処理に係る動作フローの一例を示すフローチャートである。本動作フローは、例えば、制御部１０が、オペレータに指定されたレシピに応じて、基板処理装置１００の各部の動作を制御することで実現される。ここでは、酸化珪素の膜および窒化珪素の膜が形成された基板Ｗを処理液としての燐酸水溶液に浸漬することで、燐酸水溶液によって窒化珪素の膜を選択的に溶解するエッチング処理を行う例を挙げて説明する。 <1-3-1. Operation flow related to etching processing>
FIG. 4 is a flowchart showing an example of an operation flow relating to the etching process of the substrate W in the substrate processing apparatus 100. This operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100 according to the recipe designated by the operator. Here, an example in which a substrate W on which a silicon oxide film and a silicon nitride film are formed is immersed in a phosphoric acid aqueous solution as a processing liquid to perform an etching process of selectively dissolving the silicon nitride film with the phosphoric acid aqueous solution I will give you an explanation.
　基板処理装置１００において基板Ｗのエッチング処理が行われる場合には、例えば、図４で示されるように、前処理（ステップＳ１）と、本処理（ステップＳ２）と、後処理（ステップＳ３）と、がこの記載順に実行される１サイクルの処理（サイクル処理ともいう）が実行される。 When the substrate W is etched in the substrate processing apparatus 100, for example, as shown in FIG. 4, a pretreatment (step S1), a main treatment (step S2), and a posttreatment (step S3) are performed. , Are executed in the order described, and a one-cycle process (also called a cycle process) is executed.
　　　　＜１－３－１－１．前処理の動作＞
　前処理（ステップＳ１）では、例えば、薬液処理槽ＣＢ２に貯留されている燐酸水溶液に複数の基板Ｗを浸漬させる前に、薬液処理槽ＣＢ２に対する燐酸水溶液の供給などによって燐酸水溶液がエッチング処理に適した活性状態となるように準備が行われる。なお、前処理では、例えば、薬液処理槽ＣＢ２に貯留されている燐酸水溶液に対して、図示を省略する気泡を導入する構成によってバブリング処理が施されてもよい。 <1-3-1-1. Pre-processing operation>
In the pretreatment (step S1), for example, before the plurality of substrates W are immersed in the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2, the phosphoric acid aqueous solution is suitable for etching treatment by supplying the phosphoric acid aqueous solution to the chemical liquid treatment bath CB2. Preparations are made so that the active state is achieved. In the pretreatment, for example, the bubbling treatment may be performed on the phosphoric acid aqueous solution stored in the chemical liquid treatment tank CB2 by a configuration in which bubbles (not shown) are introduced.
　前処理では、例えば、第２液供給部ＳＬ２が、薬液処理槽ＣＢ２に使用前燐酸水溶液を供給する。このとき、例えば、薬液処理槽ＣＢ２は、第２液供給部ＳＬ２からの使用前燐酸水溶液の供給に応じて、使用済み燐酸水溶液を液排出部ＥＬ１に排出する。ここで、例えば、第２液供給部ＳＬ２による薬液処理槽ＣＢ２への使用前燐酸水溶液の供給量と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出量と、が等しければ、薬液処理槽ＣＢ２から燐酸水溶液が溢れ出さない。ここでは、例えば、第５バルブＶ５および第８バルブＶ８による第５配管部Ｔｂ５および第７配管部Ｔｂ７の流路の開放によって、薬液処理槽ＣＢ２から第５配管部Ｔｂ５および第７配管部Ｔｂ７を介して使用済み燐酸水溶液が冷却タンクＣｔ１に向けて排出されてもよいし、薬液処理槽ＣＢ２から第８配管部Ｔｂ８を介して使用済み燐酸水溶液が冷却タンクＣｔ１に向けて排出されてもよい。また、このとき、例えば、液補充部ＡＬ１は、液排出部ＥＬ１に使用前燐酸水溶液を補充することで、液排出部ＥＬ１において、使用済み燐酸水溶液に使用前燐酸水溶液を混ぜることで、混合燐酸水溶液を生成させる。ここでは、例えば、冷却タンクＣｔ１において混合燐酸水溶液が生成される。この混合燐酸水溶液は、例えば、第９バルブＶ９による第９配管部Ｔｂ９の流路の開放によって、冷却タンクＣｔ１から第９配管部Ｔｂ９を介して処理液出力部Ｅｘ０へ送られる。 In the pretreatment, for example, the second liquid supply unit SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2. At this time, for example, the chemical liquid processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in response to the supply of the before-use phosphoric acid aqueous solution from the second liquid supply part SL2. Here, for example, if the supply amount of the before-use phosphoric acid aqueous solution to the chemical liquid processing tank CB2 by the second liquid supply unit SL2 and the discharge amount of the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the liquid discharging unit EL1 are equal to each other. The phosphoric acid aqueous solution does not overflow from the chemical solution treatment tank CB2. Here, for example, by opening the flow paths of the fifth piping portion Tb5 and the seventh piping portion Tb7 by the fifth valve V5 and the eighth valve V8, the fifth piping portion Tb5 and the seventh piping portion Tb7 are moved from the chemical treatment tank CB2. The used phosphoric acid aqueous solution may be discharged to the cooling tank Ct1 via the above, or the used phosphoric acid aqueous solution may be discharged to the cooling tank Ct1 from the chemical liquid treatment tank CB2 via the eighth pipe portion Tb8. In addition, at this time, for example, the liquid replenishing unit AL1 replenishes the liquid discharging unit EL1 with the before-use phosphoric acid aqueous solution, and mixes the used phosphoric acid aqueous solution with the before-use phosphoric acid aqueous solution at the liquid discharging unit EL1. Generate an aqueous solution. Here, for example, the mixed phosphoric acid aqueous solution is generated in the cooling tank Ct1. The mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the treatment liquid output unit Ex0 via the ninth piping unit Tb9 by opening the flow path of the ninth piping unit Tb9 by the ninth valve V9, for example.
　換言すれば、前処理では、液供給工程と、液排出工程と、液補充工程と、が行われる。液供給工程は、例えば、液供給管部としての第４配管部Ｔｂ４を介して薬液処理槽ＣＢ２に燐酸水溶液を供給する工程を含む。液排出工程は、例えば、エッチング工程において使用された後の使用済み燐酸水溶液を薬液処理槽ＣＢ２から基板処理装置１００の外まで液排出管部Ｔｇ１を介して排出する工程を含む。このとき、例えば、薬液処理槽ＣＢ２は、第４配管部Ｔｂ４を介した使用前燐酸水溶液の供給に応じて使用済み燐酸水溶液を液排出部ＥＬ１に排出する。液補充工程は、例えば、基板成分の溶解濃度が使用済み燐酸水溶液よりも低い使用前燐酸水溶液を、液補充管部としての第１１配管部Ｔｂ１１を介して液排出部ＥＬ１に補充することで、使用済み燐酸水溶液と使用前燐酸水溶液とを混ぜて混合溶液としての混合燐酸水溶液を生成する処理を含む。これにより、例えば、前処理においても、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において、使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化（例えば、シロキサンの結晶化）が生じにくい。 In other words, in the pretreatment, a liquid supply process, a liquid discharge process, and a liquid replenishment process are performed. The liquid supply step includes, for example, a step of supplying the phosphoric acid aqueous solution to the chemical liquid treatment tank CB2 via the fourth pipe portion Tb4 as the liquid supply pipe portion. The liquid discharging step includes, for example, a step of discharging the used phosphoric acid aqueous solution after being used in the etching step from the chemical solution processing bath CB2 to the outside of the substrate processing apparatus 100 via the liquid discharging pipe portion Tg1. At this time, for example, the chemical liquid processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in response to the supply of the before-use phosphoric acid aqueous solution through the fourth piping portion Tb4. In the liquid replenishment step, for example, a pre-use phosphoric acid aqueous solution in which the dissolved concentration of the substrate component is lower than the used phosphoric acid aqueous solution is replenished to the liquid discharge part EL1 via the eleventh piping part Tb11 as a liquid replenishment pipe part, The treatment includes mixing the used phosphoric acid aqueous solution and the pre-use phosphoric acid aqueous solution to generate a mixed phosphoric acid aqueous solution as a mixed solution. As a result, for example, even in the pretreatment, crystallization of the components eluted from the substrate W in the used phosphoric acid aqueous solution (for example, siloxane) in the route for discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100. Is less likely to occur.
　本処理（ステップＳ１）の前の前処理（ステップＳ２）では、例えば、液供給工程において、第４配管部Ｔｂ４を介して薬液処理槽ＣＢ２に、燐酸水溶液を１回供給してもよいし、燐酸水溶液を複数回に分けて供給してもよい。換言すれば、液供給工程において、例えば、第２液供給部ＳＬ２によって、第４配管部Ｔｂ４を介して薬液処理槽ＣＢ２に、燐酸水溶液を少なくとも１回供給してもよい。また、例えば、液排出工程において、薬液処理槽ＣＢ２から液排出管部Ｔｇ１を介して基板処理装置１００の外まで、使用済み燐酸水溶液を１回排出してもよいし、使用済み燐酸水溶液を複数回に分けて排出してもよい。換言すれば、液排出工程において、例えば、液排出部ＥＬ１によって、薬液処理槽ＣＢ２から液排出管部Ｔｇ１を介して基板処理装置１００の外まで、使用済み燐酸水溶液を少なくとも１回排出してもよい。また、例えば、液補充工程において、第１１配管部Ｔｂ１１を介して液排出部ＥＬ１に、使用前燐酸水溶液を１回補充してもよいし、使用前燐酸水溶液を複数回に分けて補充してもよい。換言すれば、液補充工程において、例えば、液補充部ＡＬ１によって、第１１配管部Ｔｂ１１を介して液排出部ＥＬ１に、使用前燐酸水溶液を少なくとも１回補充してもよい。 In the pretreatment (step S2) before the main treatment (step S1), for example, in the liquid supply step, the phosphoric acid aqueous solution may be supplied once to the chemical liquid treatment tank CB2 via the fourth pipe portion Tb4, The phosphoric acid aqueous solution may be supplied in multiple times. In other words, in the liquid supply step, for example, the second liquid supply unit SL2 may supply the aqueous solution of phosphoric acid at least once to the chemical liquid treatment tank CB2 via the fourth piping unit Tb4. Further, for example, in the liquid discharging step, the used phosphoric acid aqueous solution may be discharged once from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100 via the liquid discharging pipe portion Tg1, or a plurality of used phosphoric acid aqueous solutions may be discharged. It may be discharged in batches. In other words, in the liquid discharging step, for example, even if the used phosphoric acid aqueous solution is discharged at least once from the chemical liquid processing bath CB2 to the outside of the substrate processing apparatus 100 via the liquid discharging pipe portion Tg1 by the liquid discharging portion EL1. Good. Further, for example, in the liquid replenishment step, the liquid discharge part EL1 may be replenished with the before-use phosphoric acid aqueous solution once through the eleventh piping part Tb11, or the before-use phosphoric acid aqueous solution may be replenished in plural times. Good. In other words, in the liquid replenishment step, for example, the liquid replenishment unit AL1 may replenish the liquid discharge unit EL1 through the eleventh piping unit Tb11 with the pre-use phosphoric acid aqueous solution at least once.
　図５は、前処理の動作の一例に係るタイミングチャートである。図５（ａ）には、前処理が実行される期間Ｐ０における、第２液供給部ＳＬ２から薬液処理槽ＣＢ２への使用前燐酸水溶液（新液）の供給量（液供給量ともいう）と、第２液供給部ＳＬ２の第４バルブＶ４の開閉状況と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出量（液排出量ともいう）と、についての時間変化に係るタイミングチャートが示されている。図５（ｂ）には、前処理の期間Ｐ０における、液補充部ＡＬ１から液排出部ＥＬ１への使用前燐酸水溶液の補充量（液補充量ともいう）と、液補充部ＡＬ１の第１０バルブＶ１０の開閉状況と、についての時間変化に係るタイミングチャートが示されている。 FIG. 5 is a timing chart according to an example of the operation of preprocessing. FIG. 5A shows a supply amount (also referred to as a liquid supply amount) of the before-use phosphoric acid aqueous solution (new liquid) from the second liquid supply unit SL2 to the chemical liquid treatment tank CB2 in the period P0 in which the pretreatment is performed. , The opening / closing state of the fourth valve V4 of the second liquid supply unit SL2, and the discharge amount of the used phosphoric acid aqueous solution from the chemical liquid treatment tank CB2 to the liquid discharge unit EL1 (also referred to as liquid discharge amount) with time. A timing chart is shown. FIG. 5B shows a replenishment amount (also referred to as a liquid replenishment amount) of the pre-use phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 and the tenth valve of the liquid replenishment unit AL1 in the pretreatment period P0. A timing chart regarding the opening / closing status of V10 and time change is shown.
　ここで、例えば、液供給量と液排出量とが等しい場合には、レシピでは、例えば、前処理の期間Ｐ０の長さと、液供給量と、液補充量と、が規定される。液補充量は、例えば、液供給量に対する割合としての１／Ｎ（Ｎは１～１０の整数）などで指定されてもよい。例えば、期間Ｐ０が１８０秒間であり、液供給量が２リットルであり、Ｎが２であるような条件がレシピで規定される場合が考えられる。この場合には、液排出量は２リットルとなり、液補充量は、１リットル（＝２リットル／Ｎ＝２リットル／２）となる。 Here, for example, when the liquid supply amount and the liquid discharge amount are equal, the recipe defines, for example, the length of the pretreatment period P0, the liquid supply amount, and the liquid replenishment amount. The liquid replenishment amount may be designated by, for example, 1 / N (N is an integer of 1 to 10) as a ratio to the liquid supply amount. For example, it is conceivable that the recipe defines conditions such that the period P0 is 180 seconds, the liquid supply amount is 2 liters, and N is 2. In this case, the liquid discharge amount is 2 liters, and the liquid replenishment amount is 1 liter (= 2 liters / N = 2 liters / 2).
　図５の例では、例えば、時刻ｔ０ａから時刻ｔ０ｄの間の期間Ｐ０のうち、時刻ｔ０ａから時刻ｔ０ｃの間の期間Ｐ０ｓにおいて、第４バルブＶ４の開放によって使用前燐酸水溶液（新液）が薬液処理槽ＣＢ２に約Ｆｒ０［ｍｌ／ｍｉｎ］の流量で供給されるとともに、薬液処理槽ＣＢ２から液排出部ＥＬ１に使用済み燐酸水溶液が約Ｆｒ０［ｍｌ／ｍｉｎ］の流量で供給される。このとき、時刻ｔ０ａから時刻ｔ０ｂの間の期間Ｐ０ｓをＮで除した期間Ｐ０ｓ／Ｎにおいて、第１０バルブＶ１０の開放によって使用前燐酸水溶液（新液）が約Ｆｒ０［ｍｌ／ｍｉｎ］の流量で液排出部ＥＬ１に補充される。Ｆｒ０は、例えば、２０００ｍｌ／ｍｉｎなどに設定される。 In the example of FIG. 5, for example, in the period P0 between the time t0a and the time t0c, in the period P0s between the time t0a and the time t0c, the pre-use phosphoric acid aqueous solution (new solution) causes the chemical solution to become a chemical solution by opening the fourth valve V4. While being supplied to the processing tank CB2 at a flow rate of about Fr0 [ml / min], the used phosphoric acid aqueous solution is supplied from the chemical solution processing tank CB2 to the liquid discharge part EL1 at a flow rate of about Fr0 [ml / min]. At this time, during the period P0s / N obtained by dividing the period P0s between the time t0a and the time t0b by N, the pre-use phosphoric acid aqueous solution (new solution) is flown at a flow rate of about Fr0 [ml / min] by opening the tenth valve V10. It is replenished in the liquid discharge part EL1. Fr0 is set to, for example, 2000 ml / min.
　ところで、前処理においては、液供給工程および液排出工程を行わなくてもよい。この場合にも、液補充工程において、例えば、液補充部ＡＬ１によって、第１１配管部Ｔｂ１１を介して液排出部ＥＬ１に、使用前燐酸水溶液を少なくとも１回補充してもよい。このように、例えば、本処理において基板Ｗのエッチング処理を行う前に、予め液排出部ＥＬ１へ使用前燐酸水溶液を少なくとも１回供給することで、本処理においてエッチング処理を行う際に、薬液処理槽ＣＢ２から液排出部ＥＬ１へ排出される使用済み燐酸水溶液と、液補充部ＡＬ１から液排出部ＥＬ１へ補充する使用前燐酸水溶液と、が混合されやすくなる。これにより、例えば、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化が生じにくい。 By the way, it is not necessary to perform the liquid supply process and the liquid discharge process in the pretreatment. Also in this case, in the liquid replenishing step, for example, the liquid replenishing unit AL1 may replenish the liquid discharging unit EL1 through the eleventh piping unit Tb11 with the pre-use phosphoric acid aqueous solution at least once. Thus, for example, before performing the etching process of the substrate W in the main process, by supplying the pre-use phosphoric acid aqueous solution to the liquid discharge part EL1 at least once in advance, the chemical process is performed in the etching process in the main process. The used phosphoric acid aqueous solution discharged from the bath CB2 to the liquid discharge part EL1 and the before-use phosphoric acid aqueous solution replenished from the liquid replenishment part AL1 to the liquid discharge part EL1 are easily mixed. As a result, for example, crystallization of the components eluted from the substrate W in the used phosphoric acid aqueous solution does not easily occur in the path for discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100.
　　　　＜１－３－１－２．本処理の動作＞
　本処理（ステップＳ２）では、薬液処理部５２において複数の基板Ｗにエッチング処理が施される。ここでは、例えば、リフターＬＦ２に保持された複数の基板Ｗが、薬液処理槽ＣＢ２に貯留されている燐酸水溶液に浸漬させる。これにより、薬液処理部５２において燐酸水溶液によって複数の基板Ｗに対するエッチング処理を行う工程（エッチング工程ともいう）が実行される。このとき、上述した第１液供給部ＳＬ１による第１液供給処理、第１液循環部ＣＬ１による第１液循環処理、第２液供給部ＳＬ２による第２液供給処理、第２液循環部ＣＬ２による第２液循環処理と、液排出部ＥＬ１による液排出処理、液補充部ＡＬ１による液補充処理と、が適宜並行して行われる。 <1-3-1-2. Operation of this process>
In this processing (step S2), the plurality of substrates W are subjected to etching processing in the chemical liquid processing section 52. Here, for example, the plurality of substrates W held by the lifter LF2 is immersed in the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2. As a result, a step (also referred to as an etching step) of performing the etching process on the plurality of substrates W with the phosphoric acid aqueous solution is performed in the chemical liquid processing section 52. At this time, the first liquid supply process by the first liquid supply unit SL1, the first liquid circulation process by the first liquid circulation unit CL1, the second liquid supply process by the second liquid supply unit SL2, and the second liquid circulation unit CL2 described above. The second liquid circulation process by the liquid discharge unit EL1, the liquid discharge process by the liquid discharge unit EL1, and the liquid supplement process by the liquid supplement unit AL1 are appropriately performed in parallel.
　具体的には、本処理でも、前処理と同様に、例えば、第２液供給部ＳＬ２は、薬液処理槽ＣＢ２に使用前燐酸水溶液を供給する。このとき、例えば、薬液処理槽ＣＢ２は、第２液供給部ＳＬ２からの使用前燐酸水溶液の供給に応じて、使用済み燐酸水溶液を液排出部ＥＬ１に排出する。また、このとき、例えば、液補充部ＡＬ１は、液排出部ＥＬ１に使用前燐酸水溶液を補充することで、液排出部ＥＬ１において、使用済み燐酸水溶液に使用前燐酸水溶液を混ぜることで、混合燐酸水溶液を生成させる。この混合燐酸水溶液は、液排出部ＥＬ１から処理液出力部Ｅｘ０へ送られる。このため、本処理でも、前処理と同様に、液供給工程と、液排出工程と、液補充工程と、が行われる。そして、例えば、エッチング工程において薬液処理槽ＣＢ２によってエッチング処理を行う際に、液供給工程において第１液供給部ＳＬ１によって第４配管部Ｔｂ４を介して薬液処理槽ＣＢ２に使用前燐酸水溶液を供給するとともに、液補充工程において、液補充部ＡＬ１によって第１１配管部Ｔｂ１１を介して液排出部ＥＬ１に使用前燐酸水溶液を補充する。 Specifically, also in this treatment, as in the pretreatment, for example, the second liquid supply unit SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2. At this time, for example, the chemical liquid processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in response to the supply of the before-use phosphoric acid aqueous solution from the second liquid supply part SL2. In addition, at this time, for example, the liquid replenishing unit AL1 replenishes the liquid discharging unit EL1 with the before-use phosphoric acid aqueous solution, and mixes the used phosphoric acid aqueous solution with the before-use phosphoric acid aqueous solution at the liquid discharging unit EL1. Generate an aqueous solution. This mixed phosphoric acid aqueous solution is sent from the liquid discharge part EL1 to the processing liquid output part Ex0. Therefore, also in this process, the liquid supply process, the liquid discharge process, and the liquid replenishment process are performed as in the pretreatment. Then, for example, when the etching process is performed by the chemical liquid treatment bath CB2 in the etching process, the pre-use phosphoric acid aqueous solution is supplied to the chemical liquid treatment bath CB2 by the first liquid supply unit SL1 through the fourth pipe portion Tb4 in the liquid supply process. At the same time, in the solution replenishing step, the solution replenishing section AL1 replenishes the solution discharge section EL1 with the pre-use phosphoric acid aqueous solution through the eleventh piping section Tb11.
　このようにして、本処理においても、例えば、薬液処理槽ＣＢ２から基板処理装置１００の外に使用済み燐酸水溶液を排出する際に、この使用済み燐酸水溶液に、シリコンの溶解濃度が相対的に低い使用前燐酸水溶液を混ぜて排出すれば、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化としてのシロキサンの結晶化が生じにくい。 In this way, also in this processing, for example, when the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100, the dissolved concentration of silicon in the used phosphoric acid aqueous solution is relatively low. If the phosphoric acid aqueous solution before use is mixed and discharged, in the route for discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the outside of the substrate processing apparatus 100, siloxane as crystallization as a crystallization component of the elution component from the substrate W in the used phosphoric acid aqueous solution is discharged. Less likely to crystallize.
　ここで、例えば、液補充工程において、使用前燐酸水溶液を使用済み燐酸水溶液に混ぜることで、混合燐酸水溶液における基板成分の溶解濃度を溶解度未満とすれば、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化としてのシロキサンの結晶化が生じにくい。 Here, for example, in the liquid replenishment step, if the solution concentration of the substrate component in the mixed phosphoric acid aqueous solution is made less than the solubility by mixing the phosphoric acid aqueous solution before use with the spent phosphoric acid aqueous solution, the chemical solution treatment tank CB2 is used to remove the substrate processing apparatus 100 In the route of discharging the used phosphoric acid aqueous solution to the outside, crystallization of siloxane as crystallization of the components eluted from the substrate W in the used phosphoric acid aqueous solution does not easily occur.
　また、本実施形態では、例えば、液供給工程において、液供給管部としての第４配管部Ｔｂ４を介して薬液処理槽ＣＢ２に使用前燐酸水溶液を供給するような構成が採用されると、薬液処理槽ＣＢ２に供給するための使用前燐酸水溶液を、液排出部ＥＬ１において使用済み燐酸水溶液に混合させる用途にも用いることができる。これにより、例えば、薬液処理槽ＣＢ２に使用前燐酸水溶液を供給するための第１液供給部ＳＬ１および第２液供給部ＳＬ２と、液排出部ＥＬ１で使用済み燐酸水溶液に混ぜる使用前燐酸水溶液を補充するための液補充部ＡＬ１と、の間で構成の少なくとも一部の共用化を図ることが可能となる。例えば、処理液供給部Ｅｎ０ならびにその周辺の配管部の共用化が図られ得る。その結果、例えば、基板処理装置１００の構成の簡略化を図ることができる。 In addition, in the present embodiment, for example, in the liquid supply process, when the pre-use phosphoric acid aqueous solution is supplied to the chemical liquid processing tank CB2 through the fourth pipe portion Tb4 as the liquid supply pipe portion, the chemical liquid is used. It can also be used for the purpose of mixing the used phosphoric acid aqueous solution to be supplied to the treatment tank CB2 with the used phosphoric acid aqueous solution in the liquid discharge part EL1. As a result, for example, the first liquid supply unit SL1 and the second liquid supply unit SL2 for supplying the pre-use phosphoric acid aqueous solution to the chemical liquid treatment tank CB2, and the pre-use phosphoric acid aqueous solution mixed with the used phosphoric acid aqueous solution in the liquid discharge unit EL1. At least a part of the configuration can be shared between the liquid replenishment unit AL1 for replenishment. For example, the treatment liquid supply unit En0 and the piping portion around it can be shared. As a result, for example, the configuration of the substrate processing apparatus 100 can be simplified.
　また、本実施形態では、液排出工程は、第１液排出工程と、液冷却工程と、第２液排出工程と、を含む。第１液排出工程は、例えば、使用済み燐酸水溶液を薬液処理槽ＣＢ２から、液排出管部Ｔｇ１に含まれた第１部分としての第７配管部Ｔｂ７および第８配管部Ｔｂ８の少なくとも一方に排出する工程を含む。液冷却工程は、例えば、液排出部ＥＬ１に含まれ且つ第７配管部Ｔｂ７に接続された冷却タンクＣｔ１において使用済み燐酸水溶液もしくは混合燐酸水溶液を冷却する工程を含む。第２液排出工程は、例えば、冷却タンクＣｔ１から液排出管部Ｔｇ１に含まれており且つ冷却タンクＣｔ１に接続された第２部分としての第９配管部Ｔｂ９を介して混合燐酸水溶液を基板処理装置１００の外まで排出する工程を含む。このような構成が採用されれば、例えば、使用済み燐酸水溶液が冷却タンクＣｔ１で冷却されても、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化としてのシロキサンの結晶化が生じにくい。 Further, in the present embodiment, the liquid discharging process includes a first liquid discharging process, a liquid cooling process, and a second liquid discharging process. In the first liquid discharging step, for example, the used phosphoric acid aqueous solution is discharged from the chemical liquid treatment tank CB2 into at least one of the seventh pipe portion Tb7 and the eighth pipe portion Tb8 as the first portion included in the liquid discharge pipe portion Tg1. Including the step of The liquid cooling step includes, for example, a step of cooling the used phosphoric acid aqueous solution or the mixed phosphoric acid aqueous solution in the cooling tank Ct1 included in the liquid discharge section EL1 and connected to the seventh piping section Tb7. In the second liquid discharging step, for example, the mixed phosphoric acid aqueous solution is subjected to the substrate processing through the ninth piping portion Tb9 which is included in the liquid discharging pipe portion Tg1 from the cooling tank Ct1 and is connected to the cooling tank Ct1 as the second portion. It includes a step of discharging to the outside of the device 100. If such a configuration is adopted, for example, even if the used phosphoric acid aqueous solution is cooled in the cooling tank Ct1, the used phosphoric acid aqueous solution is discharged from the chemical solution treatment tank CB2 to the outside of the substrate processing apparatus 100 in the route. Crystallization of siloxane as crystallization of the component eluted from the substrate W in the aqueous solution is unlikely to occur.
　そして、本処理（ステップＳ２）では、例えば、リフターＬＦ２に保持された複数の基板Ｗが、薬液処理槽ＣＢ２に貯留されている燐酸水溶液に浸漬されている時間が、所定時間を経過すると、リフターＬＦ２の上昇によって、リフターＬＦ２に保持された複数の基板Ｗが、薬液処理槽ＣＢ２に貯留された燐酸水溶液から引き上げられる。本処理（ステップＳ２）では、例えば、複数の基板Ｗによってそれぞれ構成される複数のグループの基板Ｗに対して順にエッチング処理が施されてもよい。この場合には、リフターＬＦ２の昇降などによって、複数の基板Ｗによってそれぞれ構成される複数のグループの基板Ｗについて、順に薬液処理槽ＣＢ２に貯留された燐酸水溶液に対して複数の基板Ｗが浸漬され、燐酸水溶液から複数の基板Ｗが引き上げられる処理が、繰り返して実行される。なお、薬液処理槽ＣＢ２に貯留された燐酸水溶液から引き上げられた複数の基板Ｗには、例えば、薬液処理部５２に隣接する洗浄処理部５１で純水による洗浄が施される。 Then, in the main processing (step S2), for example, when the plurality of substrates W held in the lifter LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2 for a predetermined time, the lifter Due to the rise of LF2, the plurality of substrates W held by the lifter LF2 are pulled up from the phosphoric acid aqueous solution stored in the chemical liquid processing bath CB2. In the main processing (step S2), for example, the etching processing may be sequentially performed on the plurality of groups of substrates W each configured by the plurality of substrates W. In this case, by raising and lowering the lifter LF2 or the like, with respect to a plurality of groups of substrates W each constituted by a plurality of substrates W, the plurality of substrates W are sequentially immersed in the phosphoric acid aqueous solution stored in the chemical treatment bath CB2. The process of pulling up the plurality of substrates W from the phosphoric acid aqueous solution is repeatedly performed. The plurality of substrates W pulled up from the phosphoric acid aqueous solution stored in the chemical liquid processing tank CB2 are cleaned with pure water in a cleaning processing unit 51 adjacent to the chemical liquid processing unit 52, for example.
　ところで、本処理が行われる際には、例えば、薬液処理槽ＣＢ２の容量の５～１０割程度の燐酸水溶液が入れ替えられる場合がある。この場合には、本処理中において、例えば、エッチング工程において薬液処理槽ＣＢ２によって基板Ｗに対するエッチング処理を行う際に、液供給工程における第２液供給部ＳＬ２による第４配管部Ｔｂ４を介した薬液処理槽ＣＢ２への使用前燐酸水溶液の２回以上の供給と、液補充工程における液補充部ＡＬ１による第１１配管部Ｔｂ１１を介した液排出部ＥＬ１への使用前燐酸水溶液の２回以上の補充と、を同期させて実行させてもよい。ここでは、本処理中において、エッチング処理を行う際に、第２液供給部ＳＬ２から薬液処理槽ＣＢ２への使用前燐酸水溶液の供給と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出と、液補充部ＡＬ１から液排出部ＥＬ１への使用前燐酸水溶液の供給と、をそれぞれ分割数Ｍで規定されるＭ回に分割して、相互に同期させて実行してもよい。 By the way, when this treatment is performed, for example, a phosphoric acid aqueous solution of about 50 to 100% of the capacity of the chemical treatment tank CB2 may be replaced. In this case, during the main process, for example, when the etching process is performed on the substrate W by the chemical liquid processing bath CB2 in the etching process, the chemical liquid via the fourth pipe portion Tb4 by the second liquid supply unit SL2 in the liquid supply process is used. Supply of the pre-use phosphoric acid aqueous solution to the treatment tank CB2 more than once, and replenishment of the pre-use phosphoric acid aqueous solution to the liquid discharge part EL1 through the eleventh pipe part Tb11 by the liquid replenishing part AL1 in the liquid replenishing step more than twice. And may be executed in synchronization. Here, during the main processing, when the etching processing is performed, the supply of the before-use phosphoric acid aqueous solution from the second liquid supply unit SL2 to the chemical liquid processing tank CB2 and the used phosphoric acid from the chemical liquid processing tank CB2 to the liquid discharge portion EL1. The discharge of the aqueous solution and the supply of the pre-use phosphoric acid aqueous solution from the liquid replenishing unit AL1 to the liquid discharging unit EL1 may be divided into M times defined by the division number M, and may be executed in synchronization with each other. ..
　このような動作が採用されれば、例えば、本処理中において、時間の経過に対して薬液処理槽ＣＢ２で貯留される燐酸水溶液の状態が略均一となりやすい。そして、例えば、液排出部ＥＬ１で生成される混合燐酸水溶液における基板成分の溶解濃度が均一化されやすい。その結果、例えば、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化（シロキサンの結晶化）が生じにくい。 If such an operation is adopted, for example, during the main treatment, the state of the phosphoric acid aqueous solution stored in the chemical liquid treatment tank CB2 tends to become substantially uniform over time. Then, for example, the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution generated in the liquid discharge part EL1 is likely to be uniform. As a result, for example, crystallization of the component eluted from the substrate W (crystallization of siloxane) in the used phosphoric acid aqueous solution is less likely to occur in the route of discharging the used phosphoric acid aqueous solution from the chemical treatment bath CB2 to the outside of the substrate processing apparatus 100.
　図６は、本処理の動作の一例に係るタイミングチャートである。図６（ａ）には、本処理が実行される期間Ｐ１における、第２液供給部ＳＬ２から薬液処理槽ＣＢ２への使用前燐酸水溶液（新液）の供給量（液供給量）と、第２液供給部ＳＬ２の第４バルブＶ４の開閉状況と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出量（液排出量）と、についての時間変化に係るタイミングチャートが示されている。図６（ｂ）には、本処理の期間Ｐ１における、液補充部ＡＬ１から液排出部ＥＬ１への使用前燐酸水溶液の補充量（液補充量）と、液補充部ＡＬ１の第１０バルブＶ１０の開閉状況と、についての時間変化に係るタイミングチャートが示されている。 FIG. 6 is a timing chart according to an example of the operation of this processing. FIG. 6A shows the supply amount (liquid supply amount) of the before-use phosphoric acid aqueous solution (new liquid) from the second liquid supply unit SL2 to the chemical liquid processing tank CB2 during the period P1 in which this processing is executed, A timing chart showing changes over time in the opening / closing state of the fourth valve V4 of the two-liquid supply unit SL2 and the discharge amount (liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the liquid discharge unit EL1 is shown. Has been done. FIG. 6B shows the replenishment amount of the pre-use phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 (liquid replenishment amount) and the tenth valve V10 of the liquid replenishment unit AL1 in the period P1 of the main processing. There is shown a timing chart regarding the open / close state and the change over time.
　ここで、例えば、液供給量と液排出量とが等しい場合には、レシピでは、例えば、本処理の期間Ｐ１の長さと、液供給量と、液補充量と、分割数Ｍと、が規定される。液補充量は、例えば、液供給量に対する割合としての１／Ｎ（Ｎは１～１０の整数）などで指定されてもよい。例えば、期間Ｐ１が７２００秒間であり、液供給量が５０リットルであり、Ｎが１０であり、Ｍが１０であるような条件がレシピで規定される場合が考えられる。この場合には、１回当たりの液供給量は５リットル（＝５０リットル／Ｍ＝５０リットル／１０）となり、液排出量は５０リットルとなり、１回当たりの液排出量は５リットル（＝５０リットル／１０＝５０リットル／Ｍ）となり、液補充量は５リットル（＝５０リットル／１０＝５０リットル／Ｎ）となり、１回当たりの液補充量は０．５リットル（＝５リットル／１０＝５リットル／Ｍ）となる。 Here, for example, when the liquid supply amount and the liquid discharge amount are equal, the recipe defines, for example, the length of the period P1 of the main processing, the liquid supply amount, the liquid replenishment amount, and the division number M. To be done. The liquid replenishment amount may be designated by, for example, 1 / N (N is an integer of 1 to 10) as a ratio to the liquid supply amount. For example, it is conceivable that the recipe defines conditions such that the period P1 is 7200 seconds, the liquid supply amount is 50 liters, N is 10 and M is 10. In this case, the liquid supply amount per time is 5 liters (= 50 liters / M = 50 liter / 10), the liquid discharge amount is 50 liters, and the liquid discharge amount per time is 5 liters (= 50 liters). Liter / 10 = 50 liter / M), the liquid replenishment amount is 5 liters (= 50 liter / 10 = 50 liter / N), and the liquid replenishment amount per time is 0.5 liter (= 5 liter / 10 =) 5 liter / M).
　図６の例では、例えば、時刻ｔ１ａから時刻ｔ１ｂの間の期間Ｐ１を１０分割したそれぞれの期間（例えば７２０秒間）において、第４バルブＶ４の開放によって使用前燐酸水溶液（新液）が薬液処理槽ＣＢ２に約Ｆｒ１［ｍｌ／ｍｉｎ］の流量で供給されるとともに、薬液処理槽ＣＢ２から液排出部ＥＬ１に使用済み燐酸水溶液が約Ｆｒ１［ｍｌ／ｍｉｎ］の流量で供給される。このとき、時刻ｔ１ａから時刻ｔ１ｂの間の期間Ｐ１を１０分割したそれぞれの期間（例えば７２０秒間）において、第１０バルブＶ１０の開放によって使用前燐酸水溶液（新液）が約Ｆｒ１［ｍｌ／ｍｉｎ］の流量で液排出部ＥＬ１に補充される。Ｆｒ１は、例えば、８００ｍｌ／ｍｉｎなどに設定される。 In the example of FIG. 6, for example, during each period (for example, 720 seconds) obtained by dividing the period P1 from the time t1a to the time t1b into 10 parts, the pre-use phosphoric acid aqueous solution (new solution) is treated with the chemical solution by opening the fourth valve V4. While being supplied to the tank CB2 at a flow rate of about Fr1 [ml / min], the used phosphoric acid aqueous solution is supplied from the chemical solution processing tank CB2 to the solution discharge part EL1 at a flow rate of about Fr1 [ml / min]. At this time, during each period (for example, 720 seconds) obtained by dividing the period P1 between the time t1a and the time t1b into 10 parts, the pre-use phosphoric acid aqueous solution (new solution) is about Fr1 [ml / min] by opening the tenth valve V10. Is replenished to the liquid discharge part EL1 at a flow rate of. Fr1 is set to, for example, 800 ml / min.
　図７は、本処理に係る動作フローの一例を示すフローチャートである。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。図７のステップＳ２１では、制御部１０が、処理の対象である複数の基板Ｗに対してオペレータが指定したレシピを認識する。ステップＳ２２では、制御部１０によって、ステップＳ２１で認識されたレシピにおいて、本処理におけるエッチング処理を行う際に、第２液供給部ＳＬ２から薬液処理槽ＣＢ２への使用前燐酸水溶液の供給と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出と、液補充部ＡＬ１から液排出部ＥＬ１への使用前燐酸水溶液の補充と、をそれぞれＭ回に分割して行う機能（分割機能ともいう）が有効とされているか否か判定する。ここで、分割機能が有効であれば、ステップＳ２３において、本処理におけるエッチング処理を実行する際に、第２液供給部ＳＬ２から薬液処理槽ＣＢ２への使用前燐酸水溶液の供給と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出と、液補充部ＡＬ１から液排出部ＥＬ１への使用前燐酸水溶液の補充と、をそれぞれ分割して行う。一方、分割機能が有効でなければ、ステップＳ２４で、本処理におけるエッチング処理を実行する際に、第２液供給部ＳＬ２から薬液処理槽ＣＢ２への使用前燐酸水溶液の供給と、薬液処理槽ＣＢ２から液排出部ＥＬ１への使用済み燐酸水溶液の排出と、液補充部ＡＬ１から液排出部ＥＬ１への使用前燐酸水溶液の補充と、をそれぞれ分割することなく行う。 FIG. 7 is a flowchart showing an example of an operation flow related to this processing. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100. In step S21 of FIG. 7, the control unit 10 recognizes the recipe designated by the operator for the plurality of substrates W to be processed. In step S22, the control unit 10 supplies the pre-use phosphoric acid aqueous solution from the second liquid supply unit SL2 to the chemical liquid processing tank CB2 when performing the etching process in the main process in the recipe recognized in step S21, and the chemical liquid. The function of performing the discharge of the used phosphoric acid aqueous solution from the processing tank CB2 to the liquid discharge part EL1 and the replenishment of the before-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 in M times (division function) It is also determined whether or not) is valid. Here, if the dividing function is effective, in step S23, when the etching process in the main process is performed, the supply of the pre-use phosphoric acid aqueous solution from the second liquid supply unit SL2 to the chemical solution processing tank CB2 and the chemical solution processing tank The discharge of the used phosphoric acid aqueous solution from the CB2 to the liquid discharge part EL1 and the replenishment of the before-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 are separately performed. On the other hand, if the dividing function is not effective, in step S24, the pre-use phosphoric acid aqueous solution is supplied from the second solution supply unit SL2 to the chemical solution processing tank CB2 and the chemical solution processing tank CB2 when the etching processing in this processing is executed. The discharge of the used phosphoric acid aqueous solution from the liquid discharge part EL1 to the liquid discharge part EL1 and the replenishment of the pre-use phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 are performed without division.
　　　　＜１－３－１－３．後処理の動作＞
　後処理（ステップＳ３）では、例えば、本処理（ステップＳ２）が終了した後に、薬液処理槽ＣＢ２に対する燐酸水溶液の供給などによって、次のサイクル処理の実行に向けた準備が行われる。 <1-3-1-3. Post-processing operation>
In the post-treatment (step S3), for example, after the main treatment (step S2) is completed, preparation for the execution of the next cycle treatment is performed by supplying the phosphoric acid aqueous solution to the chemical liquid treatment tank CB2.
　　　＜１－３－２．エッチング処理のインターバル期間における動作＞
　基板処理装置１００では、基板Ｗの処理の計画あるいはメンテナンスの計画によっては、基板Ｗのエッチング処理が行われた後に、次の基板Ｗのエッチング処理が行われるまでに、長時間を要する場合ある。この場合には、薬液処理部５２において基板Ｗのエッチング処理が実行されない期間（非実行期間ともインターバル期間ともいう）が存在する。このインターバル期間では、基板処理装置１００の液排出部ＥＬ１に使用済み燐酸水溶液が長期間にわたって残留していると、この使用済み燐酸水溶液において基板Ｗからの溶出成分の結晶化（シロキサンの結晶化）が生じるおそれがある。 <1-3-2. Operation during etching process interval period>
In the substrate processing apparatus 100, depending on the processing plan or maintenance plan of the substrate W, it may take a long time until the next etching process of the substrate W is performed after the etching process of the substrate W is performed. In this case, there is a period (also referred to as a non-execution period or an interval period) during which the etching process of the substrate W is not performed in the chemical liquid processing unit 52. During this interval, if the used phosphoric acid aqueous solution remains in the liquid discharge part EL1 of the substrate processing apparatus 100 for a long period of time, crystallization of the components eluted from the substrate W in this used phosphoric acid aqueous solution (crystallization of siloxane). May occur.
　　　　＜１－３－２－１．インターバル液補充処理＞
　本実施形態に係る基板処理装置１００では、例えば、制御部１０が、エッチング工程における薬液処理槽ＣＢ２による基板Ｗに対するエッチング処理が実行された後であって、次のエッチング工程における薬液処理槽ＣＢ２による基板Ｗに対するエッチング処理が実行されるまでのインターバル期間に、所定のタイミングで液補充工程における液補充部ＡＬ１による第１１配管部Ｔｂ１１を介した液排出部ＥＬ１への使用前燐酸水溶液の補充を実行させてもよい。このような、インターバル期間において液補充工程における液補充部ＡＬ１による第１１配管部Ｔｂ１１を介した液排出部ＥＬ１への使用前燐酸水溶液の補充を行う処理を以下「インターバル液補充処理」と称する。また、所定のタイミングとしては、例えば、制御部１０が有する機能の１つであるタイマによって第１所定時間Ｐ２がカウントされる度のタイミングが考えられる。タイマによるカウントが開始されるタイミングとしては、例えば、薬液処理部５２におけるエッチング処理が終了したタイミングおよび薬液処理部５２におけるエッチング処理が実行されていない状態で基板処理装置１００が自動運転の状態に設定されたタイミングなどの薬液処理部５２が待機状態に設定されたタイミング、ならびにインターバル液補充処理が終了したタイミングなどが考えられる。第１所定時間Ｐ２は、例えば、オペレータによる入力部８を介した入力に応じて、１～４８時間程度の間の任意の時間に設定され得る。また、所定のタイミングにおける液補充部ＡＬ１による液排出部ＥＬ１への使用前燐酸水溶液の補充量としては、例えば、冷却タンクＣｔ１の容量（例えば、５～５０リットル程度）に１／ｎ（ｎは１～１０の整数）を乗じた程度の所定量が考えられる。 <1-3-2-1. Interval liquid replenishment process>
In the substrate processing apparatus 100 according to the present embodiment, for example, after the control unit 10 performs the etching process on the substrate W by the chemical liquid processing bath CB2 in the etching process, the control unit 10 uses the chemical liquid processing bath CB2 in the next etching process. During the interval period until the etching process is performed on the substrate W, the pre-use phosphoric acid aqueous solution is replenished to the liquid discharge part EL1 through the eleventh piping part Tb11 by the liquid replenishment part AL1 in the liquid replenishment step at a predetermined timing. You may let me. Such a process of replenishing the pre-use phosphoric acid aqueous solution to the liquid discharge part EL1 via the eleventh piping part Tb11 by the liquid replenishing part AL1 in the liquid replenishing step in the interval period is hereinafter referred to as “interval liquid replenishing process”. Further, the predetermined timing may be, for example, the timing at which the first predetermined time P2 is counted by the timer, which is one of the functions of the control unit 10. As the timing at which the timer starts counting, for example, the substrate processing apparatus 100 is set to the automatic operation state at the timing when the etching process in the chemical solution processing unit 52 is finished and the etching process in the chemical solution processing unit 52 is not executed. The timing at which the chemical liquid processing unit 52 is set to the standby state, such as the timing when the interval liquid replenishment processing is completed, or the like may be considered. The first predetermined time period P2 can be set to an arbitrary time period of about 1 to 48 hours, for example, according to an input made by the operator via the input unit 8. Further, the replenishment amount of the before-use phosphoric acid aqueous solution to the liquid discharge part EL1 by the liquid replenishment part AL1 at a predetermined timing is, for example, 1 / n (where n is about 5 to 50 liters) of the capacity of the cooling tank Ct1. A predetermined amount that is multiplied by an integer of 1 to 10) is possible.
　図８は、インターバル液補充処理に係る動作を説明するための図である。図８（ａ）は、インターバル液補充処理に係るタイミングチャートの一例を示し、図８（ｂ）は、インターバル液補充処理の動作フローの一例に係るフローチャートを示す。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。 FIG. 8 is a diagram for explaining the operation related to the interval liquid replenishing process. FIG. 8A shows an example of a timing chart relating to the interval liquid replenishing process, and FIG. 8B shows a flowchart relating to an example of the operation flow of the interval liquid replenishing process. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
　図８（ａ）で示されるように、例えば、インターバル液補充処理は、インターバル期間において第１所定時間Ｐ２が経過する度に実行される場合が考えられる。 As shown in FIG. 8A, for example, the interval liquid replenishment process may be executed every time the first predetermined time P2 elapses in the interval period.
　ここでは、例えば、図８（ｂ）のステップＳ４１～Ｓ４７の処理が行われることで、インターバル期間におけるインターバル液補充処理が実行され得る。 Here, for example, the interval liquid replenishment process in the interval period can be executed by performing the processes of steps S41 to S47 of FIG. 8B.
　ステップＳ４１では、制御部１０が、薬液処理部５２が待機状態にあるか否か判定する。ここでは、薬液処理部５２が待機状態になるまでステップＳ４１の判定が繰り返し、薬液処理部５２が待機状態になれば、ステップＳ４２に進む。 In step S41, the control unit 10 determines whether the chemical liquid processing unit 52 is in a standby state. Here, the determination in step S41 is repeated until the chemical liquid processing unit 52 enters the standby state, and when the chemical liquid processing unit 52 enters the standby state, the process proceeds to step S42.
　ステップＳ４２では、制御部１０が、第１所定時間Ｐ２の経過を計測するためのカウントを行う処理（第１カウント処理ともいう）を開始する。 In step S42, the control unit 10 starts a process (also referred to as a first count process) for counting to measure the elapse of the first predetermined time P2.
　ステップＳ４３では、制御部１０が、薬液処理部５２によって前処理、本処理および後処理などを含むサイクル処理が開始されているか否か判定する。ここで、サイクル処理が開始されていれば、ステップＳ４１に戻る。一方、サイクル処理が開始されていなければ、ステップＳ４４に進む。 In step S43, the control unit 10 determines whether the chemical liquid processing unit 52 has started a cycle process including pre-processing, main processing, and post-processing. If the cycle process has started, the process returns to step S41. On the other hand, if the cycle process has not been started, the process proceeds to step S44.
　ステップＳ４４では、制御部１０が、第１カウント処理が開始されてから第１所定時間Ｐ２が経過したか否か判定する。ここで、第１カウント処理が開始されてから第１所定時間Ｐ２が経過していなければ、ステップＳ４３に戻る。一方、第１カウント処理が開始されてから第１所定時間Ｐ２が経過すれば、ステップＳ４５に進む。 In step S44, the control unit 10 determines whether or not the first predetermined time P2 has elapsed since the first counting process was started. Here, if the first predetermined time P2 has not elapsed since the start of the first counting process, the process returns to step S43. On the other hand, if the first predetermined time P2 has elapsed since the first counting process was started, the process proceeds to step S45.
　ステップＳ４５では、制御部１０が、液補充部ＡＬ１によるインターバル液補充処理を開始させる。このとき、例えば、第９バルブＶ９によって第９配管部Ｔｂ９の流路が適宜開放されることで、冷却タンクＣｔ１から処理液出力部Ｅｘ０に混合燐酸水溶液が送出される。 In step S45, the control unit 10 starts the interval liquid replenishment process by the liquid replenishment unit AL1. At this time, for example, the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, so that the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the treatment liquid output portion Ex0.
　ステップＳ４６では、制御部１０が、インターバル液補充処理における液補充部ＡＬ１から液排出部ＥＬ１への処理前燐酸水溶液の補充量が所定量に到達したか否か判定する。ここでは、制御部１０が、補充量が所定量に到達するまでステップＳ４６の判定を繰り返し、補充量が所定量に到達すれば、ステップＳ４７でインターバル液補充処理を終了して、ステップＳ４２に戻る。 In step S46, the control unit 10 determines whether or not the replenishment amount of the untreated phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 in the interval liquid replenishment process has reached a predetermined amount. Here, the control unit 10 repeats the determination of step S46 until the replenishment amount reaches the predetermined amount. When the replenishment amount reaches the predetermined amount, the interval liquid replenishment process is ended in step S47, and the process returns to step S42. ..
　このような構成が採用されれば、例えば、インターバル期間が存在する場合であっても、薬液処理槽ＣＢ２から基板処理装置１００の外へ使用済み燐酸水溶液を排出する経路において使用済み燐酸水溶液における基板Ｗからの溶出成分の結晶化（シロキサンの結晶化）が生じにくい。 If such a configuration is adopted, for example, even in the case where there is an interval period, the substrate in the used phosphoric acid aqueous solution in the path for discharging the used phosphoric acid aqueous solution from the chemical liquid processing tank CB2 to the outside of the substrate processing apparatus 100. Crystallization of the component eluted from W (crystallization of siloxane) hardly occurs.
　　　＜１－３－３．冷却タンクにおける貯留量に応じた動作＞
　上述したように、例えば、薬液処理部５２においてエッチング処理を含むサイクル処理を行う際には、薬液処理槽ＣＢ２から液排出部ＥＬ１の冷却タンクＣｔ１に使用済み燐酸水溶液が送られる。このため、例えば、インターバル期間などであっても、サイクル処理の実行が可能となるように、冷却タンクＣｔ１にはある程度の空き容量を確保しておく態様が考えられる。そこで、基板処理装置１００では、例えば、冷却タンクＣｔ１における燐酸水溶液の貯留量を監視して、この貯留量に応じた動作を行ってもよい。 <1-3-3. Operation according to the storage amount in the cooling tank>
As described above, for example, when performing a cycle process including an etching process in the chemical liquid processing unit 52, the used phosphoric acid aqueous solution is sent from the chemical liquid processing tank CB2 to the cooling tank Ct1 of the liquid discharge unit EL1. Therefore, for example, a mode in which a certain amount of free space is secured in the cooling tank Ct1 so that the cycle processing can be executed even during the interval period or the like can be considered. Therefore, in the substrate processing apparatus 100, for example, the storage amount of the phosphoric acid aqueous solution in the cooling tank Ct1 may be monitored and an operation according to the storage amount may be performed.
　図９は、冷却タンクＣｔ１における監視の対象となる貯留量を説明するための図である。ここでは、例えば、検出部Ｍ４が、冷却タンクＣｔ１における貯留量について、４段階の貯留量（第１～４貯留量Ｌｖ１～Ｌｖ４）を監視することが可能である場合を想定する。この場合には、基板処理装置１００では、例えば、冷却タンクＣｔ１に貯留されている液の貯留量を検出する処理を行う工程（検出工程ともいう）が行われる。ここでは、例えば、第１貯留量Ｌｖ１が、上限レベルであり、第２貯留量Ｌｖ２が、定量レベルであり、第３貯留量Ｌｖ３が、第１閾値としての投入不可レベルであり、第４貯留量Ｌｖ４が、第２閾値としての補充不可レベルである場合が想定される。第３貯留量Ｌｖ３と第４貯留量Ｌｖ４とは、例えば、異なっていてもよいし、同一であってもよい。 FIG. 9 is a diagram for explaining the storage amount to be monitored in the cooling tank Ct1. Here, for example, it is assumed that the detection unit M4 can monitor the storage amount in the cooling tank Ct1 in four stages (first to fourth storage amounts Lv1 to Lv4). In this case, in the substrate processing apparatus 100, for example, a process (also referred to as a detection process) of performing a process of detecting the storage amount of the liquid stored in the cooling tank Ct1 is performed. Here, for example, the first storage amount Lv1 is the upper limit level, the second storage amount Lv2 is the fixed amount level, the third storage amount Lv3 is the input impossibility level as the first threshold value, and the fourth storage amount. It is assumed that the amount Lv4 is the refill impossible level as the second threshold value. The third storage amount Lv3 and the fourth storage amount Lv4 may be different or the same, for example.
　　　　＜１－３－３－１．インターバル液補充処理に係る監視＞
　例えば、制御部１０は、検出工程において、検出部Ｍ４によって、冷却タンクＣｔ１に貯留されている液の貯留量が、第２閾値としての第４貯留量Ｌｖ４に到達していることが検出されれば、インターバル液補充処理の実行を禁止してもよい。このような処理については、制御部１０が、第１液処理部５および第２液処理部６の処理部ごとに行う態様が考えられる。このような構成が採用されれば、例えば、冷却タンクＣｔ１に第２閾値としての第４貯留量Ｌｖ４以上の液が貯留されていれば、薬液処理槽ＣＢ２によるエッチング処理が行われていないインターバルの期間において、所定のタイミングでの液排出部ＥＬ１への使用前燐酸水溶液の補充を実行しない。 <1-3-3-1. Monitoring related to interval liquid replenishment processing>
For example, in the detection process of the control unit 10, the detection unit M4 detects that the storage amount of the liquid stored in the cooling tank Ct1 has reached the fourth storage amount Lv4 as the second threshold value. For example, execution of the interval liquid replenishment process may be prohibited. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6. If such a configuration is adopted, for example, if the cooling tank Ct1 stores a liquid having a fourth storage amount Lv4 or more as a second threshold value, the interval of the interval in which the etching process by the chemical liquid processing tank CB2 is not performed. During the period, the pre-use phosphoric acid aqueous solution is not replenished to the liquid discharge part EL1 at a predetermined timing.
　図１０は、冷却タンクＣｔ１の貯留量の監視結果に応じたインターバル液補充処理に係る動作を説明するための図である。図１０（ａ）は、冷却タンクＣｔ１の貯留量の監視結果に応じたインターバル液補充処理に係るタイミングチャートの一例を示し、図１０（ｂ）は、冷却タンクＣｔ１の貯留量の監視結果に応じたインターバル液補充処理の動作フローの一例に係るフローチャートを示す。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。 FIG. 10 is a diagram for explaining the operation related to the interval liquid replenishing process according to the monitoring result of the storage amount of the cooling tank Ct1. FIG. 10A shows an example of a timing chart relating to the interval liquid replenishment processing according to the monitoring result of the storage amount of the cooling tank Ct1, and FIG. 10B shows the timing chart of the monitoring result of the storage amount of the cooling tank Ct1. The flowchart which concerns on an example of the operation | movement flow of the interval liquid replenishment process which was shown is shown. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
　図１０（ａ）で示されるように、例えば、インターバル液補充処理は、通常は、インターバル期間において第１所定時間Ｐ２が経過する度に実行されるが、時刻ｔ３ｂでは、冷却タンクＣｔ１に貯留されている液の貯留量が、第２閾値としての第４貯留量Ｌｖ４に到達していたため、インターバル液補充処理が行われずに、第１所定時間Ｐ２の経過を計測するための第１カウント処理が最初から行われる態様が考えられる。 As shown in FIG. 10A, for example, the interval liquid replenishing process is usually executed every time the first predetermined time P2 elapses in the interval period, but is stored in the cooling tank Ct1 at the time t3b. Since the stored amount of the stored liquid has reached the fourth stored amount Lv4 as the second threshold value, the first count process for measuring the passage of the first predetermined time P2 is performed without performing the interval liquid replenishment process. A mode that is performed from the beginning can be considered.
　図１０（ｂ）の動作フローは、上述した図８（ｂ）の動作フローにおけるステップＳ４４の処理とステップＳ４５の処理との間に、ステップＳ４４ｂの処理が挿入されたものである。図１０（ｂ）のステップＳ４４ｂでは、制御部１０が、検出部Ｍ４によって冷却タンクＣｔ１に貯留されている液の貯留量が、第２閾値としての第４貯留量Ｌｖ４に到達しているか否か判定する。ここで、液の貯留量が、第４貯留量Ｌｖ４に到達していれば、ステップＳ４２に戻る。一方、液の貯留量が、第４貯留量Ｌｖ４に到達していなければ、ステップＳ４５に進む。 The operation flow of FIG. 10B is one in which the processing of step S44b is inserted between the processing of step S44 and the processing of step S45 in the above-described operation flow of FIG. 8B. In step S44b of FIG. 10B, the control unit 10 determines whether or not the storage amount of the liquid stored in the cooling tank Ct1 by the detection unit M4 has reached the fourth storage amount Lv4 as the second threshold value. judge. Here, if the stored amount of the liquid has reached the fourth stored amount Lv4, the process returns to step S42. On the other hand, if the stored amount of the liquid has not reached the fourth stored amount Lv4, the process proceeds to step S45.
　このような構成が採用されれば、例えば、インターバル期間が解消された後において基板Ｗにエッチング処理を施す際に、薬液処理槽ＣＢ２から液排出部ＥＬ１に使用済み燐酸水溶液を排出することができずにエッチング処理で生じる不具合の発生を抑制することができる。 If such a configuration is adopted, for example, when the substrate W is subjected to the etching process after the interval period is eliminated, the used phosphoric acid aqueous solution can be discharged from the chemical liquid processing tank CB2 to the liquid discharge part EL1. Instead, it is possible to suppress the occurrence of defects caused by the etching process.
　ところで、例えば、インターバル期間において、検出部Ｍ４および冷却タンクＣｔ１を含む液排出部ＥＬ１で生じた何らかの不具合によって、検出部Ｍ４で検出される貯留量が第４貯留量Ｌｖ４に到達している状態が、長く続きすぎて、インターバル液補充処理を行うことができない場合が想定される。そこで、例えば、制御部１０は、インターバル期間において、インターバル液補充処理が実行されていない時間が、第２所定時間Ｐ３に到達したことに応答して、出力部９によって第１アラームを発報させてもよい。第２所定時間Ｐ３は、例えば、第１所定時間Ｐ２の所定数倍（例えば２～５倍）程度に設定される。第１アラームには、例えば、所定の警告画面の表示および警告音声の出力などが適用される。このような処理については、制御部１０が、第１液処理部５および第２液処理部６の処理部ごとに行う態様が考えられる。 By the way, for example, in the interval period, a state in which the storage amount detected by the detection unit M4 has reached the fourth storage amount Lv4 due to some malfunction that has occurred in the liquid discharge unit EL1 including the detection unit M4 and the cooling tank Ct1 It is assumed that the interval liquid replenishment process cannot be performed because it lasts too long. Therefore, for example, the control unit 10 causes the output unit 9 to issue the first alarm in response to the second predetermined time P3 during which the interval liquid replenishing process is not executed in the interval period. May be. The second predetermined time P3 is set, for example, to a predetermined multiple of the first predetermined time P2 (for example, 2 to 5 times). For example, the display of a predetermined warning screen and the output of a warning sound are applied to the first alarm. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6.
　図１１は、インターバル液補充処理が実行されていない期間（不実行期間ともいう）の監視についての動作を説明するための図である。図１１（ａ）は、インターバル液補充処理の不実行期間の監視動作に係るタイミングチャートの一例を示し、図１１（ｂ）は、インターバル液補充処理の不実行期間の監視動作についての動作フローの一例に係るフローチャートを示す。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。 FIG. 11 is a diagram for explaining an operation regarding monitoring during a period (also referred to as a non-execution period) during which the interval liquid replenishing process is not executed. FIG. 11A shows an example of a timing chart relating to the monitoring operation during the non-execution period of the interval liquid replenishing process, and FIG. 11B shows the operation flow of the monitoring operation during the non-execution period of the interval liquid replenishing process. 3 shows a flowchart according to an example. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
　図１１（ａ）で示されるように、例えば、インターバル液補充処理の不実行期間が第２所定時間Ｐ３に到達したことに応答して、出力部９が第１アラームを発報する態様が考えられる。 As shown in FIG. 11A, for example, a mode in which the output unit 9 issues the first alarm in response to the non-execution period of the interval liquid replenishment process reaching the second predetermined time P3 is considered. Be done.
　ここでは、例えば、図１１（ｂ）のステップＳ５１～Ｓ５７の処理が行われることで、インターバル期間においてインターバル液補充処理の不実行期間の監視動作が実行され得る。 Here, for example, by performing the processes of steps S51 to S57 of FIG. 11B, the monitoring operation of the non-execution period of the interval liquid replenishment process can be executed in the interval period.
　ステップＳ５１では、制御部１０が、薬液処理部５２が待機状態にあるか否か判定する。ここでは、制御部１０が、薬液処理部５２が待機状態になるまでステップＳ５１の判定を繰り返し、薬液処理部５２が待機状態になれば、ステップＳ５２に進む。 In step S51, the control unit 10 determines whether the chemical liquid processing unit 52 is in a standby state. Here, the control unit 10 repeats the determination of step S51 until the chemical liquid processing unit 52 enters the standby state, and when the chemical liquid processing unit 52 enters the standby state, the process proceeds to step S52.
　ステップＳ５２では、制御部１０が、第２所定時間Ｐ３の経過を計測するためのカウントを行う処理（第２カウント処理ともいう）を開始する。 In step S52, the control unit 10 starts a process (also referred to as a second count process) for counting to measure the elapse of the second predetermined time P3.
　ステップＳ５３では、制御部１０が、液補充部ＡＬ１による液排出部ＥＬ１への使用前燐酸水溶液の補充を含む処理（液補充含有処理ともいう）が実行されているか否か判定する。液補充含有処理には、例えば、前処理、本処理および後処理などを含むサイクル処理、ならびにインターバル液補充処理が含まれる。ここで、液補充含有処理が実行されていれば、ステップＳ５７に進み、液補充含有処理の実行が終了すれば、ステップＳ５１に戻る。一方、液補充含有処理が実行されていなければ、ステップＳ５４に進む。 In step S53, the control unit 10 determines whether or not a process including replenishment of the pre-use phosphoric acid aqueous solution to the liquid discharge unit EL1 by the liquid replenishment unit AL1 (also referred to as a liquid replenishment containing process) is executed. The liquid replenishment-containing treatment includes, for example, a cycle treatment including a pretreatment, a main treatment and a post treatment, and an interval liquid replenishment treatment. Here, if the liquid replenishment containing process is executed, the process proceeds to step S57, and if the liquid replenishment containing process is completed, the process returns to step S51. On the other hand, if the liquid replenishment containing process has not been executed, the process proceeds to step S54.
　ステップＳ５４では、制御部１０が、第２カウント処理が開始されてから第２所定時間Ｐ３が経過したか否か判定する。ここで、第２カウント処理が開始されてから第２所定時間Ｐ３が経過していなければ、ステップＳ５３に戻る。一方、第２カウント処理が開始されてから第２所定時間Ｐ３が経過すれば、ステップＳ５５に進む。 In step S54, the control unit 10 determines whether or not the second predetermined time P3 has elapsed since the second counting process was started. Here, if the second predetermined time P3 has not elapsed since the second counting process was started, the process returns to step S53. On the other hand, if the second predetermined time P3 has elapsed since the second counting process was started, the process proceeds to step S55.
　ステップＳ５５では、制御部１０が、出力部９によって第１アラームの発報を行わせる。 In step S55, the control unit 10 causes the output unit 9 to issue the first alarm.
　ステップＳ５６では、制御部１０が、インターバル液補充処理およびサイクル処理の実行が禁止されている状態（処理禁止状態ともいう）に設定する。このとき、例えば、制御部１０が、複数の基板Ｗを、薬液処理部５２の薬液処理槽ＣＢ２に投入せずに、洗浄処理部５１などの複数の基板Ｗに変化が生じにくいエリアに留め置く態様が考えられる。 In step S56, the control unit 10 sets a state in which execution of the interval liquid replenishment process and cycle process is prohibited (also referred to as a process prohibition state). At this time, for example, the control unit 10 does not put the plurality of substrates W into the chemical liquid processing bath CB2 of the chemical liquid processing unit 52, and keeps them in an area where changes are unlikely to occur in the plurality of substrates W such as the cleaning processing unit 51. Embodiments are possible.
　このような構成が採用されれば、例えば、検出部Ｍ４および冷却タンクＣｔ１を含む液排出部ＥＬ１で生じた何らかの不具合に対処することができる。また、例えば、検出部Ｍ４および冷却タンクＣｔ１を含む液排出部ＥＬ１で何らかの不具合が生じている際に、サイクル処理の実行が禁止されるため、基板Ｗのエッチング処理における不具合の発生が回避され得る。 If such a configuration is adopted, for example, it is possible to deal with some trouble that has occurred in the liquid discharge part EL1 including the detection part M4 and the cooling tank Ct1. Further, for example, when some malfunction occurs in the liquid discharge unit EL1 including the detection unit M4 and the cooling tank Ct1, the execution of the cycle process is prohibited, so that the malfunction in the etching process of the substrate W can be avoided. ..
　また、例えば、インターバル液補充処理において、第３流量計Ｍ３を含む液補充部ＡＬ１および冷却タンクＣｔ１を含む液排出部ＥＬ１で生じた何らかの不具合によって、インターバル液補充処理が実行されている状態が、長く続き過ぎる場合が想定される。そこで、例えば、制御部１０は、インターバル期間において、インターバル液補充処理が実行されている時間（実行時間ともいう）が、第３所定時間Ｐ４に到達したこと応答して、出力部９によって第２アラームを発報させてもよい。第３所定時間Ｐ４は、例えば、インターバル液補充処理に要する通常想定される時間（所要時間ともいう）の１１０～１５０％程度の時間に設定される。第２アラームには、例えば、所定の警告画面の表示および警告音声の出力などが適用される。このような処理については、制御部１０が、第１液処理部５および第２液処理部６の処理部ごとに行う態様が考えられる。 In addition, for example, in the interval liquid replenishment process, a state in which the interval liquid replenishment process is executed due to some trouble that has occurred in the liquid replenishment unit AL1 including the third flow meter M3 and the liquid discharge unit EL1 including the cooling tank Ct1, It is assumed that it will continue for too long. Therefore, for example, the control unit 10 causes the output unit 9 to perform the second operation in response to the fact that the time during which the interval liquid replenishing process is being executed (also referred to as the execution time) has reached the third predetermined time P4 in the interval period. An alarm may be issued. The third predetermined time P4 is set to, for example, about 110 to 150% of the normally assumed time (also called the required time) required for the interval liquid replenishing process. For example, the display of a predetermined warning screen and the output of a warning sound are applied to the second alarm. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6.
　図１２は、インターバル液補充処理の実行時間の監視についての動作を説明するための図である。図１２（ａ）は、インターバル液補充処理の実行時間の監視動作に係るタイミングチャートの一例を示し、図１２（ｂ）は、インターバル液補充処理の実行時間の監視動作についての動作フローの一例に係るフローチャートを示す。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。 FIG. 12 is a diagram for explaining the operation of monitoring the execution time of the interval liquid replenishment process. FIG. 12A shows an example of a timing chart related to the operation of monitoring the execution time of the interval liquid replenishing process, and FIG. 12B shows an example of the operation flow of the operation of monitoring the execution time of the interval liquid replenishing process. The related flowchart is shown. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
　図１２（ａ）で示されるように、例えば、インターバル液補充処理の実行時間が第３所定時間Ｐ４に到達したことに応答して、出力部９が第２アラームを発報する態様が考えられる。 As shown in FIG. 12A, for example, a mode is conceivable in which the output unit 9 issues the second alarm in response to the execution time of the interval liquid replenishing process reaching the third predetermined time P4. ..
　ここでは、例えば、図１２（ｂ）のステップＳ６１～Ｓ６６の処理が行われることで、インターバル液補充処理の実行時間の監視動作が実行され得る。 Here, for example, the operation of monitoring the execution time of the interval liquid replenishing process can be executed by performing the processes of steps S61 to S66 of FIG. 12B.
　ステップＳ６１では、制御部１０が、液補充部ＡＬ１によってインターバル液補充処理が開始されたか否か判定する。ここでは、インターバル液補充処理が開始されるまでステップＳ６１の判定を繰り返し、インターバル液補充処理が開始されれば、ステップＳ６２に進む。 In step S61, the control unit 10 determines whether or not the interval replenishment process is started by the liquid replenishment unit AL1. Here, the determination in step S61 is repeated until the interval liquid replenishing process is started, and when the interval liquid replenishing process is started, the process proceeds to step S62.
　ステップＳ６２では、制御部１０が、第３所定時間Ｐ４の経過を計測するためのカウントを行う処理（第３カウント処理ともいう）を開始する。 In step S62, the control unit 10 starts a process (also referred to as a third count process) for counting to measure the elapse of the third predetermined time P4.
　ステップＳ６３では、制御部１０が、インターバル液補充処理が終了したか否か判定する。ここで、インターバル液補充処理が終了されていなければ、ステップＳ６４に進む。一方、インターバル液補充処理が終了されれば、ステップＳ６１に戻る。 In step S63, the control unit 10 determines whether or not the interval liquid replenishment process has been completed. If the interval liquid replenishing process has not been completed, the process proceeds to step S64. On the other hand, when the interval liquid replenishing process is completed, the process returns to step S61.
　ステップＳ６４では、制御部１０が、第３カウント処理が開始されてから第３所定時間Ｐ４が経過したか否か判定する。ここで、第３カウント処理が開始されてから第３所定時間Ｐ４が経過していなければ、ステップＳ６３に戻る。一方、第３カウント処理が開始されてから第３所定時間Ｐ４が経過すれば、ステップＳ６５に進む。 In step S64, the control unit 10 determines whether or not the third predetermined time P4 has elapsed since the third counting process was started. Here, if the third predetermined time P4 has not elapsed since the third counting process was started, the process returns to step S63. On the other hand, if the third predetermined time P4 has elapsed since the third counting process was started, the process proceeds to step S65.
　ステップＳ６５では、制御部１０が、出力部９によって第２アラームの発報を行わせる。 In step S65, the control unit 10 causes the output unit 9 to issue the second alarm.
　ステップＳ６６では、制御部１０が、インターバル液補充処理およびサイクル処理の実行が禁止されている状態（処理禁止状態）に設定する。このとき、例えば、制御部１０は、複数の基板Ｗを、薬液処理部５２の薬液処理槽ＣＢ２に投入せずに、洗浄処理部５１などの複数の基板Ｗに変化を生じさせにくいエリアに留め置く態様が考えられる。 In step S66, the control unit 10 sets a state in which execution of the interval liquid replenishment process and the cycle process is prohibited (process prohibited state). At this time, for example, the control unit 10 does not put the plurality of substrates W into the chemical liquid processing bath CB2 of the chemical liquid processing unit 52, and keeps the plurality of substrates W in an area where it is difficult to cause a change in the plurality of substrates W such as the cleaning processing unit 51. A mode of putting it is possible.
　このような構成が採用されれば、例えば、液補充部ＡＬ１および冷却タンクＣｔ１を含む液排出部ＥＬ１で生じた何らかの不具合に対処することができる。また、例えば、液補充部ＡＬ１および冷却タンクＣｔ１を含む液排出部ＥＬ１で何らかの不具合が生じている際に、サイクル処理の実行が禁止されるため、基板Ｗのエッチング処理における不具合の発生が回避され得る。 If such a configuration is adopted, for example, it is possible to cope with some trouble that has occurred in the liquid replenishment unit AL1 and the liquid discharge unit EL1 including the cooling tank Ct1. Further, for example, when some trouble occurs in the liquid replenishment unit AL1 and the liquid discharge unit EL1 including the cooling tank Ct1, the execution of the cycle process is prohibited, so that the occurrence of the defect in the etching process of the substrate W is avoided. obtain.
　　　　＜１－３－３－２．サイクル処理に係る監視＞
　例えば、制御部１０は、検出工程において、検出部Ｍ４によって、冷却タンクＣｔ１に貯留されている液の貯留量が、第１閾値としての第３貯留量Ｌｖ３に到達していることが検出されれば、薬液処理槽ＣＢ２による基板Ｗに対するエッチング処理の実行を禁止してもよい。このような処理については、制御部１０が、第１液処理部５および第２液処理部６の処理部ごとに行う態様が考えられる。このような構成が採用されれば、例えば、基板Ｗにエッチング処理を施す際に薬液処理槽ＣＢ２から液排出部ＥＬ１に使用済み燐酸水溶液を排出することができずにエッチング処理で生じる不具合の発生を抑制することができる。 <1-3-3-2. Monitoring related to cycle processing>
For example, in the detection step of the control unit 10, the detection unit M4 detects that the storage amount of the liquid stored in the cooling tank Ct1 has reached the third storage amount Lv3 as the first threshold value. For example, execution of the etching process on the substrate W by the chemical liquid processing bath CB2 may be prohibited. It is conceivable that the control unit 10 performs such processing for each of the first liquid processing unit 5 and the second liquid processing unit 6. If such a configuration is adopted, for example, when the substrate W is subjected to the etching process, the used phosphoric acid aqueous solution cannot be discharged from the chemical solution processing tank CB2 to the liquid discharge part EL1, and a problem occurs due to the etching process. Can be suppressed.
　図１３は、冷却タンクＣｔ１の貯留量の監視結果に応じたサイクル処理の禁止に係る動作を説明するための図である。図１３（ａ）は、冷却タンクＣｔ１の貯留量の監視結果に応じたサイクル処理の禁止に係るタイミングチャートの一例を示し、図１３（ｂ）は、冷却タンクＣｔ１の貯留量の監視結果に応じたサイクル処理の禁止についての動作フローの一例に係るフローチャートを示す。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。 FIG. 13 is a diagram for explaining an operation related to prohibition of cycle processing according to the monitoring result of the storage amount of the cooling tank Ct1. FIG. 13A shows an example of a timing chart relating to prohibition of the cycle processing according to the monitoring result of the storage amount of the cooling tank Ct1, and FIG. 13B shows the timing chart relating to the monitoring result of the storage amount of the cooling tank Ct1. The flowchart which concerns on an example of the operation | movement flow about prohibition of the cycle processing which was carried out is shown. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
　図１３（ａ）で示されるように、時刻ｔ６ｄにおいて、サイクル処理を開始する際に、冷却タンクＣｔ１に貯留されている液の貯留量が、第１閾値としての第３貯留量Ｌｖ３に到達していれば、出力部９が第３アラームを発報するとともに、サイクル処理の実行が禁止されている状態（処理禁止状態）に設定される態様が考えられる。そして、オペレータなどによる対処によって、出力部９による第３アラームの発報および処理禁止状態が解消された後に、サイクル処理の実行が開始される。 As shown in FIG. 13A, at the time t6d, when the cycle process is started, the storage amount of the liquid stored in the cooling tank Ct1 reaches the third storage amount Lv3 as the first threshold value. If so, a mode in which the output unit 9 issues the third alarm and is set to the state in which the execution of the cycle processing is prohibited (processing prohibited state) can be considered. Then, after the output unit 9 has issued the third alarm and the processing prohibition state has been resolved by the operator or the like, execution of the cycle processing is started.
　ここでは、例えば、図１３（ｂ）のステップＳ７１～Ｓ７５の処理が行われることで、冷却タンクＣｔ１の貯留量の監視結果に応じたサイクル処理の禁止に係る動作が実行され得る。 Here, for example, by performing the processing of steps S71 to S75 of FIG. 13B, the operation related to prohibiting the cycle processing according to the monitoring result of the storage amount of the cooling tank Ct1 can be executed.
　ステップＳ７１では、制御部１０が、スケジューリング部で作成したスケジュールに基づいて、サイクル処理を開始するタイミングであるか否か判定する。ここで、制御部１０は、サイクル処理を開始するタイミングになるまでステップＳ７１の判定を繰り返し、サイクル処理を開始するタイミングになれば、ステップＳ７２に進む。 In step S71, the control unit 10 determines, based on the schedule created by the scheduling unit, whether it is the timing to start the cycle processing. Here, the control unit 10 repeats the determination of step S71 until the timing to start the cycle processing, and when it comes to the timing to start the cycle processing, proceeds to step S72.
　ステップＳ７２では、制御部１０が、検出部Ｍ４によって冷却タンクＣｔ１に貯留されている液の貯留量が、第１閾値としての第３貯留量Ｌｖ３に到達しているか否か判定する。ここで、液の貯留量が、第３貯留量Ｌｖ３に到達していなければ、ステップＳ７５でサイクル処理を実行して、ステップＳ７１に戻る。一方、液の貯留量が、第３貯留量Ｌｖ３に到達していれば、ステップＳ７３に進む。 In step S72, the control unit 10 determines whether or not the storage amount of the liquid stored in the cooling tank Ct1 by the detection unit M4 has reached the third storage amount Lv3 as the first threshold value. Here, if the stored amount of the liquid has not reached the third stored amount Lv3, the cycle process is executed in step S75, and the process returns to step S71. On the other hand, if the stored amount of the liquid reaches the third stored amount Lv3, the process proceeds to step S73.
　ステップＳ７３では、制御部１０が、出力部９によって第３アラームの発報を行わせる。 In step S73, the control unit 10 causes the output unit 9 to issue the third alarm.
　ステップＳ７４では、制御部１０が、サイクル処理の実行が禁止されている処理実行禁止状態に設定する。このとき、例えば、制御部１０は、複数の基板Ｗを、薬液処理部５２の薬液処理槽ＣＢ２に投入せずに、洗浄処理部５１などの複数の基板Ｗが変化を生じにくいエリアに留め置く態様が考えられる。 In step S74, the control unit 10 sets the process execution prohibited state in which the execution of the cycle process is prohibited. At this time, for example, the control unit 10 does not put the plurality of substrates W in the chemical liquid processing bath CB2 of the chemical liquid processing unit 52, and keeps the plurality of substrates W in an area in which the plurality of substrates W hardly change, such as the cleaning processing unit 51. Embodiments are possible.
　このような構成が採用されれば、例えば、冷却タンクＣｔ１を含む液排出部ＥＬ１で生じた何らかの不具合に対処することができる。また、例えば、検出部Ｍ４および冷却タンクＣｔ１を含む液排出部ＥＬ１で何らかの不具合が生じている際に、サイクル処理の実行が禁止されるため、基板Ｗのエッチング処理における不具合の発生が回避され得る。 If such a configuration is adopted, for example, it is possible to deal with some trouble that has occurred in the liquid discharge part EL1 including the cooling tank Ct1. Further, for example, when some malfunction occurs in the liquid discharge unit EL1 including the detection unit M4 and the cooling tank Ct1, the execution of the cycle process is prohibited, so that the malfunction in the etching process of the substrate W can be avoided. ..
　＜２．第１実施形態のまとめ＞
　以上のように、第１実施形態に係る基板処理装置１００によれば、例えば、処理部としての薬液処理槽ＣＢ２から基板処理装置１００の外に第１処理液としての使用済み燐酸水溶液を排出する際に、この使用済み燐酸水溶液に、基板成分（例えばシリコン）の溶解濃度が相対的に低い第２処理液としての使用前燐酸水溶液を混ぜる。これにより、例えば、処理部としての薬液処理槽ＣＢ２から基板処理装置１００の外へ処理液としての燐酸水溶液を排出する経路において、処理液としての燐酸水溶液における基板Ｗからの溶出成分の結晶化（例えば、シロキサンの結晶化）が生じにくい。 <2. Summary of First Embodiment>
As described above, according to the substrate processing apparatus 100 of the first embodiment, for example, the used phosphoric acid aqueous solution as the first processing liquid is discharged to the outside of the substrate processing apparatus 100 from the chemical liquid processing tank CB2 as the processing unit. At this time, the used phosphoric acid aqueous solution is mixed with the pre-use phosphoric acid aqueous solution as the second processing liquid in which the dissolved concentration of the substrate component (for example, silicon) is relatively low. As a result, for example, in the path where the phosphoric acid aqueous solution as the processing liquid is discharged from the chemical liquid processing tank CB2 as the processing unit to the outside of the substrate processing apparatus 100, crystallization of the components eluted from the substrate W in the phosphoric acid aqueous solution as the processing liquid ( For example, crystallization of siloxane) is unlikely to occur.
　＜３．変形例＞
　本発明は上述の第１実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良などが可能である。 <3. Modification>
The present invention is not limited to the above-described first embodiment, and various modifications and improvements can be made without departing from the scope of the present invention.
　例えば、上記第１実施形態において、サイクル処理の実行タイミング、および液補充部ＡＬ１が液排出部ＥＬ１へ第２処理液としての使用前燐酸水溶液を補充する処理（液補充処理）の実行タイミングについては、種々変更してもよい。 For example, in the above-described first embodiment, regarding the execution timing of the cycle process and the execution timing of the process (liquid replenishment process) in which the liquid replenishment unit AL1 replenishes the liquid discharge unit EL1 with the before-use phosphoric acid aqueous solution as the second treatment liquid, , Various changes may be made.
　図１４は、サイクル処理および液補充処理の実行タイミングのバリエーションに係るタイミングチャートである。図１４（ａ）は、上記第１実施形態に係るサイクル処理の実行ならびに液補充処理の実行についてのタイミングチャートである。液補充処理には、インターバル液補充処理およびサイクル処理における液補充処理が含まれる。図１４（ｂ）および図１４（ｃ）は、第１変形例に係るサイクル処理の実行ならびに液補充処理の実行についてのタイミングチャートである。 FIG. 14 is a timing chart related to variations in the execution timings of the cycle process and the liquid replenishment process. FIG. 14A is a timing chart regarding the execution of the cycle process and the liquid replenishment process according to the first embodiment. The liquid replenishing process includes an interval liquid replenishing process and a liquid replenishing process in a cycle process. FIGS. 14B and 14C are timing charts regarding the execution of the cycle process and the liquid replenishment process according to the first modification.
　図１４（ａ）の例では、制御部１０によって、サイクル処理が行われている間はインターバル液補充処理が行われず、薬液処理部５２においてサイクル処理が行われていないインターバル期間において、第１所定時間Ｐ２が経過する度にインターバル液補充処理が行われる。 In the example of FIG. 14A, the control unit 10 does not perform the interval liquid replenishment process while the cycle process is being performed, and the first predetermined period during the interval period when the chemical liquid process unit 52 is not performing the cycle process. Every time the time P2 elapses, the interval liquid replenishing process is performed.
　図１４（ｂ）および図１４（ｃ）の例では、制御部１０によって、サイクル処理が実行されている際に液補充処理が行われず、サイクル処理の実行の有無にかかわらず、第１所定時間Ｐ２が経過する度にインターバル液補充処理が行われる。ただし、この場合には、図１４（ｃ）で示されるように、サイクル処理の実行中であれば、第１所定時間Ｐ２が経過してもインターバル液補充処理が行われずに、サイクル処理の終了に応答して、インターバル液補充処理が実行されてもよい。 In the example of FIG. 14B and FIG. 14C, the liquid replenishment process is not performed by the control unit 10 while the cycle process is being performed, and the first predetermined time is set regardless of whether or not the cycle process is performed. Every time P2 elapses, the interval liquid replenishing process is performed. However, in this case, as shown in FIG. 14C, if the cycle process is being executed, the interval liquid replenishment process is not performed even if the first predetermined time P2 has elapsed, and the cycle process ends. In response to, the interval liquid replenishment process may be executed.
　図１５は、サイクル処理および液補充処理の実行タイミングの第１変形例に係る動作フローの一例を示すフローチャートである。本動作フローは、例えば、制御部１０が、基板処理装置１００の各部の動作を制御することで実現される。 FIG. 15 is a flowchart showing an example of an operation flow according to the first modification of the execution timings of the cycle process and the liquid replenishment process. The operation flow is realized, for example, by the control unit 10 controlling the operation of each unit of the substrate processing apparatus 100.
　ここでは、例えば、図１５のステップＳ８１～Ｓ８６の処理が行われることで、第１変形例に係る液補充処理が実行される。 Here, for example, the liquid replenishing process according to the first modification is executed by performing the processes of steps S81 to S86 of FIG.
　ステップＳ８１では、制御部１０が、第１所定時間Ｐ２の経過を計測するためのカウントを行う第１カウント処理を開始する。 In step S81, the control unit 10 starts the first counting process for counting to measure the elapse of the first predetermined time P2.
　ステップＳ８２では、制御部１０が、第１カウント処理が開始されてから第１所定時間Ｐ２が経過したか否か判定する。ここでは、制御部１０が、第１カウント処理が開始されてから第１所定時間Ｐ２が経過するまでステップＳ８２の判定を繰り返し、第１所定時間Ｐ２が経過すれば、ステップＳ８３に進む。 In step S82, the control unit 10 determines whether or not the first predetermined time P2 has elapsed since the first counting process was started. Here, the control unit 10 repeats the determination in step S82 until the first predetermined time P2 elapses after the first counting process is started, and when the first predetermined time P2 elapses, the process proceeds to step S83.
　ステップＳ８３では、制御部１０が、薬液処理槽ＣＢ２におけるサイクル処理が実行中か否か判定する。ここでは、サイクル処理が実行中であれば、制御部１０がステップＳ８３の判定を繰り返し、サイクル処理が実行中でなくなれば、ステップＳ８４に進む。 In step S83, the control unit 10 determines whether or not the cycle processing in the chemical liquid processing tank CB2 is being executed. Here, if the cycle process is being executed, the control unit 10 repeats the determination of step S83, and if the cycle process is not being executed, the process proceeds to step S84.
　ステップＳ８４では、制御部１０が、液補充部ＡＬ１によるインターバル液補充処理を開始させる。このとき、例えば、第９バルブＶ９によって第９配管部Ｔｂ９の流路が適宜開放されることで、冷却タンクＣｔ１から処理液出力部Ｅｘ０に混合燐酸水溶液が送出される。 In step S84, the control unit 10 causes the liquid replenishment unit AL1 to start the interval liquid replenishment process. At this time, for example, the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, so that the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the treatment liquid output portion Ex0.
　ステップＳ８５では、制御部１０が、インターバル液補充処理における液補充部ＡＬ１から液排出部ＥＬ１への処理前燐酸水溶液の補充量が所定量に到達したか否か判定する。ここでは、制御部１０は、補充量が所定量に到達するまでステップＳ８５の処理を繰り返し、補充量が所定量に到達すれば、ステップＳ８６でインターバル液補充処理を終了させて、ステップＳ８１に戻る。 In step S85, the control unit 10 determines whether or not the replenishment amount of the untreated phosphoric acid aqueous solution from the liquid replenishment unit AL1 to the liquid discharge unit EL1 in the interval liquid replenishment process has reached a predetermined amount. Here, the control unit 10 repeats the process of step S85 until the replenishment amount reaches the predetermined amount, and when the replenishment amount reaches the predetermined amount, terminates the interval liquid replenishment process in step S86 and returns to step S81. ..
　また、例えば、上記第１実施形態および上記第１変形例において、例えば、図１６で示されるように、薬液処理部５２における液排出部ＥＬ１が、この液排出部ＥＬ１から冷却タンクＣｔ１が削除された液排出部ＥＬ１Ａに置換されてもよい。この場合には、例えば、液排出管部Ｔｇ１において、薬液処理槽ＣＢ２から排出される第１処理液としての使用済み燐酸水溶液に、液補充部ＡＬ１から補充される第２処理液としての使用前燐酸水溶液を混ぜることで、混合溶液（混合燐酸水溶液）が生成される。図１６の例では、第７配管部Ｔｂ７と第８配管部Ｔｂ８と第９配管部Ｔｂ９とが直接的に連通するように接続している。 Further, for example, in the first embodiment and the first modified example, as shown in FIG. 16, for example, the liquid discharge part EL1 in the chemical liquid processing part 52 has the cooling tank Ct1 removed from the liquid discharge part EL1. The liquid discharge part EL1A may be replaced. In this case, for example, in the liquid discharge pipe portion Tg1, before use as a second processing liquid that is replenished from the liquid replenishing unit AL1 to the used phosphoric acid aqueous solution as the first processing liquid that is discharged from the chemical liquid processing tank CB2. A mixed solution (mixed phosphoric acid aqueous solution) is generated by mixing the phosphoric acid aqueous solution. In the example of FIG. 16, the seventh piping portion Tb7, the eighth piping portion Tb8, and the ninth piping portion Tb9 are connected so as to directly communicate with each other.
　また、例えば、本発明は、上記第１実施形態に係る基板処理装置１００のようなバッチ式の基板処理装置に限られず、１枚の基板Ｗごとに、ノズルから基板Ｗに処理液を吐出して処理液を用いたエッチング処理を基板Ｗに施す、いわゆる枚葉式の基板処理装置にも適用可能である。図１７は、枚葉式の基板処理装置における薬液処理部５２Ｂの構成の一例を示す図である。図１７で示されるように、薬液処理部５２Ｂは、液供給部ＳＬ２Ｂ、薬液処理ユニットＣＰ２、液排出部ＥＬ１Ｂおよび液補充部ＡＬ１Ｂを備える。 Further, for example, the present invention is not limited to the batch type substrate processing apparatus such as the substrate processing apparatus 100 according to the first embodiment, and the processing liquid is discharged from the nozzle to the substrate W for each substrate W. The present invention can also be applied to a so-called single-wafer type substrate processing apparatus in which the substrate W is subjected to an etching process using a processing liquid. FIG. 17 is a diagram showing an example of the configuration of the chemical liquid processing unit 52B in the single wafer processing apparatus. As shown in FIG. 17, the chemical liquid processing unit 52B includes a liquid supply unit SL2B, a chemical liquid processing unit CP2, a liquid discharge unit EL1B, and a liquid replenishing unit AL1B.
　液供給部ＳＬ２Ｂは、例えば、処理部としての薬液処理ユニットＣＰ２にエッチング液として機能する処理液としての使用前燐酸水溶液を供給する処理（液供給処理）を実行することができる。この第２液供給部ＳＬ２Ｂは、例えば、液供給管部としての第４配管部Ｔｂ４を有し、処理液供給源Ｅｎ０から送られる燐酸水溶液を、第４配管部Ｔｂ４を介して薬液処理ユニットＣＰ２に供給することができる。第４配管部Ｔｂ４には、第２流量制御部Ｃｆ２が設けられている。第２流量制御部Ｃｆ２は、例えば、燐酸水溶液の流路を開閉する第４バルブＶ４と、燐酸水溶液の流量を計測する第２流量計Ｍ２とを有する。液供給部ＳＬ２では、例えば、処理液供給源Ｅｎ０から供給される燐酸水溶液は、第４配管部Ｔｂ４を通って、第２流量制御部Ｃｆ２によって設定された流量で薬液処理ユニットＣＰ２のノズル５０に供給される。 The liquid supply unit SL2B can perform, for example, a process (liquid supply process) of supplying a pre-use phosphoric acid aqueous solution as a processing liquid functioning as an etching liquid to the chemical liquid processing unit CP2 as the processing unit. The second liquid supply unit SL2B has, for example, a fourth piping unit Tb4 as a liquid supply pipe unit, and the phosphoric acid aqueous solution sent from the processing liquid supply source En0 is supplied through the fourth piping unit Tb4 to the chemical liquid processing unit CP2. Can be supplied to. The second flow rate control unit Cf2 is provided in the fourth piping unit Tb4. The second flow rate control unit Cf2 includes, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter M2 that measures the flow rate of the phosphoric acid aqueous solution. In the liquid supply unit SL2, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 passes through the fourth piping unit Tb4 and reaches the nozzle 50 of the chemical liquid processing unit CP2 at the flow rate set by the second flow rate control unit Cf2. Supplied.
　薬液処理ユニットＣＰ２は、例えば、エッチング液として機能する処理液としての燐酸水溶液によって基板Ｗに対するエッチング処理を行う部分（処理部）である。薬液処理ユニットＣＰ２は、例えば、保持部３０、回転機構４０およびノズル５０を有する。保持部３０は、例えば、基板Ｗを略水平姿勢で保持して回転させる。保持部３０には、例えば、基板Ｗの上面Ｕｓ１の逆の他の一主面（下面ともいう）Ｂｓ１を真空吸着可能な上面３０ｆを有する真空チャック、または基板Ｗの周縁部を挟持可能な複数個のチャックピンを有する挟持式のチャック等が適用される。回転機構４０は、保持部３０を回転させる。回転機構４０には、例えば、上端部に保持部３０が連結されて鉛直方向に沿って延在している回転支軸４０ｓと、回転支軸４０ｓを鉛直方向に沿った仮想的な回転軸Ａｘ１を中心として回転させることが可能なモータ等を有する回転駆動部４０ｍと、を有する構成が適用される。ここでは、例えば、回転駆動部４０ｍによって回転支軸４０ｓが回転軸Ａｘ１を中心として回転されることで、保持部３０が略水平面内で回転される。これにより、例えば、保持部３０上に保持されている基板Ｗが、回転軸Ａｘ１を中心として回転される。ノズル５０は、例えば、保持部３０に保持された基板Ｗに向けて処理液としての燐酸水溶液を吐出することができる。 The chemical liquid processing unit CP2 is, for example, a portion (processing unit) that performs etching processing on the substrate W with a phosphoric acid aqueous solution as a processing liquid that functions as an etching liquid. The chemical liquid processing unit CP2 has, for example, a holding unit 30, a rotation mechanism 40, and a nozzle 50. The holding unit 30 holds and rotates the substrate W in a substantially horizontal posture, for example. The holding unit 30 has, for example, a vacuum chuck having an upper surface 30f capable of vacuum-adsorbing another main surface (also referred to as a lower surface) Bs1 opposite to the upper surface Us1 of the substrate W, or a plurality of members capable of holding the peripheral edge of the substrate W therebetween. A sandwich type chuck or the like having individual chuck pins is applied. The rotation mechanism 40 rotates the holding unit 30. The rotation mechanism 40 includes, for example, a rotation support shaft 40s that is connected to the upper end of the rotation support shaft 40s and extends in the vertical direction, and a virtual rotation shaft Ax1 that extends the rotation support shaft 40s in the vertical direction. And a rotation drive unit 40m having a motor or the like capable of rotating about the center. Here, for example, the rotation drive unit 40m rotates the rotation support shaft 40s about the rotation axis Ax1, so that the holding unit 30 is rotated in a substantially horizontal plane. Thereby, for example, the substrate W held on the holder 30 is rotated about the rotation axis Ax1. The nozzle 50 can eject, for example, a phosphoric acid aqueous solution as a processing liquid toward the substrate W held by the holding unit 30.
　液排出部ＥＬ１Ｂは、例えば、処理部としての薬液処理ユニットＣＰ２において基板Ｗに対するエッチング処理に使用された後の処理液（第１処理液）としての燐酸水溶液（使用済み燐酸水溶液）を、薬液処理ユニットＣＰ２から基板処理装置の外まで排出する処理（液排出処理）を実行する部分である。液排出部ＥＬ１は、例えば、第８配管部Ｔｂ８を含む液排出管部Ｔｇ１を有する。第８配管部Ｔｂ８は、例えば、薬液処理ユニットＣＰ２の下部に連通するように接続している第１端部と、処理液出力部Ｅｘ０に対して連通するように接続している第２端部と、を有する。 The liquid discharge part EL1B, for example, uses a chemical solution treatment of a phosphoric acid aqueous solution (used phosphoric acid aqueous solution) as a treatment liquid (first treatment liquid) that has been used for the etching treatment on the substrate W in the chemical liquid treatment unit CP2 as the treatment portion. This is a part that executes a process of discharging from the unit CP2 to the outside of the substrate processing apparatus (liquid discharging process). The liquid discharge part EL1 has, for example, a liquid discharge pipe part Tg1 including an eighth pipe part Tb8. The eighth piping portion Tb8 is, for example, a first end portion that is connected to communicate with the lower portion of the chemical liquid processing unit CP2 and a second end portion that is connected to communicate with the processing liquid output portion Ex0. And.
　液補充部ＡＬ１Ｂは、例えば、処理液供給源Ｅｎ０から液排出部ＥＬ１Ｂに第２処理液としての使用前燐酸水溶液を補充する処理（液補充処理）を実行することができる。これにより、第１処理液としての使用済み燐酸水溶液と、第２処理液としての使用前燐酸水溶液と、を混ぜた混合溶液としての燐酸水溶液（混合燐酸水溶液ともいう）が生成される。ここでは、例えば、使用前燐酸水溶液が、使用済み燐酸水溶液よりも、基板成分（例えば、シリコン）の溶解濃度が低い状態にあるため、混合燐酸水溶液は、使用済み燐酸水溶液よりも基板成分（例えば、シリコン）の溶解濃度が低い状態となる。ここで、液補充部ＡＬ１Ｂは、例えば、液排出部ＥＬ１Ｂに接続された液補充管部としての第１１配管部Ｔｂ１１を有する。第１１配管部Ｔｂ１１は、例えば、処理液供給源Ｅｎ０に接続された第１端部と、第８配管部Ｔｂ８に合流するような形態で連通するように接続された第２端部と、を有する。第１１配管部Ｔｂ１１には、第３流量制御部Ｃｆ３が設けられている。第３流量制御部Ｃｆ３は、例えば、第１１配管部Ｔｂ１１の流路を開閉する第１０バルブＶ１０と、燐酸水溶液の流量を計測する第３流量計Ｍ３とを有する。 The liquid replenishment unit AL1B can execute a process (liquid replenishment process) of replenishing the solution discharge unit EL1B with the pre-use phosphoric acid aqueous solution as the second process liquid from the process liquid supply source En0. As a result, a phosphoric acid aqueous solution (also referred to as a mixed phosphoric acid aqueous solution) is generated as a mixed solution in which the used phosphoric acid aqueous solution as the first processing liquid and the pre-used phosphoric acid aqueous solution as the second processing liquid are mixed. Here, for example, since the aqueous solution of phosphoric acid before use has a lower dissolved concentration of the substrate component (eg, silicon) than the aqueous solution of phosphoric acid used, the mixed aqueous solution of phosphoric acid has a lower concentration of substrate components (eg, the aqueous solution of phosphoric acid than the used aqueous solution of phosphoric acid). , Silicon) has a low dissolved concentration. Here, the liquid replenishment part AL1B has, for example, an eleventh piping part Tb11 as a liquid replenishment pipe part connected to the liquid discharge part EL1B. The eleventh piping portion Tb11 includes, for example, a first end portion connected to the treatment liquid supply source En0 and a second end portion connected so as to communicate with the eighth piping portion Tb8 in such a manner as to join. Have. The 11th piping part Tb11 is provided with the 3rd flow control part Cf3. The third flow rate control unit Cf3 includes, for example, a tenth valve V10 that opens and closes the flow path of the eleventh piping unit Tb11, and a third flow meter M3 that measures the flow rate of the phosphoric acid aqueous solution.
　また、例えば、上記第１実施形態および各変形例において、第２液供給部ＳＬ２および液供給部ＳＬＢに処理液を供給するための処理液供給源Ｅｎ０と、液補充部ＡＬ１に第２処理液を供給するための処理液供給源Ｅｎ０と、が別系統の処理液供給源とされてもよい。この場合には、第２液供給部ＳＬ２および液供給部ＳＬＢに供給する処理液は、例えば、基板成分をある程度含有するように調整されたものであってもよい。また、例えば、調整槽ＳＢ１において、第２液供給部ＳＬ２に供給する処理液に、基板成分をある程度含有させてもよい。また、別の観点から言えば、例えば、液補充部ＡＬ１に供給される第２処理液における基板成分の溶解濃度が、第２液供給部ＳＬ２および液供給部ＳＬＢに供給される処理液における基板成分の溶解濃度よりも低くてもよい。 Further, for example, in the above-described first embodiment and each modification, the processing liquid supply source En0 for supplying the processing liquid to the second liquid supply unit SL2 and the liquid supply unit SLB, and the second processing liquid to the liquid replenishment unit AL1. The processing liquid supply source En0 for supplying the processing liquid may be another processing liquid supply source. In this case, the processing liquid supplied to the second liquid supply unit SL2 and the liquid supply unit SLB may be adjusted so as to contain the substrate component to some extent, for example. Further, for example, in the adjustment tank SB1, the processing liquid supplied to the second liquid supply unit SL2 may contain a substrate component to some extent. From another viewpoint, for example, the dissolution concentration of the substrate component in the second processing liquid supplied to the liquid replenishing unit AL1 is the substrate in the processing liquid supplied to the second liquid supply unit SL2 and the liquid supply unit SLB. It may be lower than the dissolved concentration of the component.
　上記一実施形態および各種変形例をそれぞれ構成する全部または一部を、適宜、矛盾しない範囲で組み合わせ可能であることは、言うまでもない。 Needless to say, all or part of each of the above-described one embodiment and various modified examples can be appropriately combined in a consistent range.
　５　第１液処理部
　６　第２液処理部
　９　出力部
　１０　制御部
　５２，５２Ｂ　薬液処理部
　５２ｓ　センサ部
　１００　基板処理装置
　ＡＬ１，ＡＬ１Ｂ　液補充部
　ＣＢ２　薬液処理槽
　ＣＰ２　薬液処理ユニット
　Ｃｔ１　冷却タンク
　ＥＬ１，ＥＬ１Ａ，ＥＬ１Ｂ　液排出部
　Ｅｎ０　処理液供給源
　Ｅｘ０　処理液出力部
　Ｌｖ１～Ｌｖ４　第１～４貯留量
　Ｍ４　検出部
　Ｐ２～Ｐ４　第１～３所定時間
　ＳＬ１　第１液供給部　　
　ＳＬ２　第２液供給部
　ＳＬ２Ｂ　液供給部
　Ｔｂ１～Ｔｂ１１　第１～１１配管部
　Ｔｇ１　液排出管部　
　Ｖ１～Ｖ１０　第１～１０バルブ
　Ｗ　基板 5 1st liquid processing part 6 2nd liquid processing part 9 Output part 10 Control part 52,52B Chemical liquid processing part 52s Sensor part 100 Substrate processing apparatus AL1, AL1B Liquid replenishing part CB2 Chemical liquid processing tank CP2 Chemical liquid processing unit Ct1 Cooling tank EL1, EL1A, EL1B Liquid discharge part En0 Treatment liquid supply source Ex0 Treatment liquid output part Lv1 to Lv4 1st to 4th storage amount M4 Detection part P2 to P4 1st to 3th predetermined time SL1 1st liquid supply part
SL2 Second liquid supply part SL2B Liquid supply part Tb1 to Tb11 First to eleventh piping part Tg1 Liquid discharge pipe part
V1 to V10 1st to 10th valves W substrate

Claims (20)

  1. 　基板処理装置であって、
    　処理液によって基板に対するエッチング処理を行う処理部と、
    　前記処理部に前記処理液を供給する液供給管部を有する液供給部と、
    　前記処理部において前記基板に対する前記エッチング処理に使用された後の第１処理液を前記処理部から前記基板処理装置の外まで排出するための液排出管部を有する液排出部と、
    　前記基板を構成する成分の溶解濃度が前記第１処理液よりも低い第２処理液を前記液排出部に補充することで前記第１処理液と前記第２処理液とを混ぜて混合溶液を生成するために、前記液排出部に接続された液補充管部を有する液補充部と、
    　前記液供給部による前記処理部への前記処理液の供給と、前記液補充部による前記液排出部への前記第２処理液の補充と、を制御する制御部と、を備える、基板処理装置。     A substrate processing apparatus,
    A processing unit that performs etching processing on the substrate with the processing liquid,
    A liquid supply part having a liquid supply pipe part for supplying the processing liquid to the processing part;
    A liquid discharge part having a liquid discharge pipe part for discharging the first processing liquid after being used for the etching process on the substrate in the processing part from the processing part to the outside of the substrate processing apparatus;
    By replenishing the liquid discharge part with a second processing liquid in which the dissolved concentration of the components constituting the substrate is lower than that of the first processing liquid, the first processing liquid and the second processing liquid are mixed to form a mixed solution. A liquid replenishment section having a liquid replenishment pipe section connected to the liquid discharge section for generating;
    A substrate processing apparatus comprising: a control unit that controls the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishment unit. ..
  2. 　請求項１に記載の基板処理装置であって、
    　前記液補充部は、前記第２処理液を前記第１処理液に混ぜることで、前記混合溶液における前記基板を構成する成分の溶解濃度を溶解度未満とする、基板処理装置。     The substrate processing apparatus according to claim 1, wherein
    The substrate processing apparatus, wherein the liquid replenishing unit mixes the second processing liquid with the first processing liquid so that the dissolved concentration of the components forming the substrate in the mixed solution is less than the solubility.
  3. 　請求項１または請求項２に記載の基板処理装置であって、
    　前記処理液は、燐酸水溶液を含み、
    　前記基板は、窒化珪素の膜を有し、
    　前記エッチング処理は、前記燐酸水溶液によって前記窒化珪素の膜を溶解させる処理を含む、基板処理装置。     The substrate processing apparatus according to claim 1, wherein
    The treatment liquid contains a phosphoric acid aqueous solution,
    The substrate has a silicon nitride film,
    The substrate processing apparatus, wherein the etching process includes a process of dissolving the silicon nitride film with the phosphoric acid aqueous solution.
  4. 　請求項１から請求項３の何れか１つの請求項に記載の基板処理装置であって、
    　前記液供給部は、前記処理部に前記第２処理液を供給する、基板処理装置。     The substrate processing apparatus according to any one of claims 1 to 3, wherein:
    The substrate processing apparatus, wherein the liquid supply unit supplies the second processing liquid to the processing unit.
  5. 　請求項１から請求項４の何れか１つの請求項に記載の基板処理装置であって、
    　前記処理部は、前記液供給部からの前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、
    　前記制御部は、前記処理部によって前記基板に対する前記エッチング処理を行う際に、前記液供給部による前記処理部への前記処理液の２回以上の供給と、前記液補充部による前記液排出部への前記第２処理液の２回以上の補充と、を同期させて実行させる、基板処理装置。     The substrate processing apparatus according to any one of claims 1 to 4, wherein:
    The processing unit discharges the first processing liquid to the liquid discharge unit in response to the supply of the processing liquid from the liquid supply unit,
    When the processing unit performs the etching process on the substrate, the control unit supplies the processing liquid to the processing unit twice or more by the liquid supply unit and the liquid discharge unit by the liquid replenishing unit. A substrate processing apparatus for synchronously performing replenishment of the second processing liquid to the substrate two or more times.
  6. 　請求項１から請求項５の何れか１つの請求項に記載の基板処理装置であって、
    　前記処理部は、前記液供給部からの前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、
    　前記制御部は、前記処理部によって前記基板に対する前記エッチング処理を行う前に、前記液補充部による前記液排出部への前記第２処理液の少なくとも１回補充、を実行させ、前記処理部によって前記基板に対する前記エッチング処理を行う際に、前記液供給部による前記処理部への前記処理液の供給と、前記液補充部による前記液排出部への前記第２処理液の補充と、を実行させる、基板処理装置。     The substrate processing apparatus according to any one of claims 1 to 5, wherein
    The processing unit discharges the first processing liquid to the liquid discharge unit in response to the supply of the processing liquid from the liquid supply unit,
    The control unit causes the liquid replenishing unit to replenish the liquid discharging unit at least once before the processing unit performs the etching process on the substrate. When performing the etching process on the substrate, the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishment unit are executed. A substrate processing apparatus.
  7. 　請求項１から請求項６の何れか１つの請求項に記載の基板処理装置であって、
    　前記制御部は、前記処理部による前記基板に対する前記エッチング処理が実行された後であって、次の前記処理部による前記基板に対する前記エッチング処理が実行されるまでの期間に、所定のタイミングで前記液補充部によって前記液排出部への前記第２処理液の補充を実行させる、基板処理装置。     A substrate processing apparatus according to any one of claims 1 to 6, wherein:
    The control unit is configured to perform the etching at a predetermined timing after the etching process is performed on the substrate by the processing unit and before the etching process is performed on the substrate by the next processing unit. A substrate processing apparatus for causing a liquid replenishing unit to replenish the second processing liquid to the liquid discharging unit.
  8. 　請求項１から請求項７の何れか１つの請求項に記載の基板処理装置であって、
    　前記液排出部は、さらに前記第１処理液を冷却する冷却タンクを含み、
    　前記液排出管部は、前記処理部と前記冷却タンクとを接続している第１部分と、前記冷却タンクに接続されており、前記基板処理装置の外まで液を排出するための第２部分と、を含む、基板処理装置。     A substrate processing apparatus according to any one of claims 1 to 7, wherein:
    The liquid discharge unit further includes a cooling tank for cooling the first processing liquid,
    The liquid discharge pipe part is connected to the cooling part and a first part connecting the processing part and the cooling tank, and a second part for discharging the liquid to the outside of the substrate processing apparatus. And a substrate processing apparatus including:
  9. 　請求項８に記載の基板処理装置であって、
    　前記液排出部は、前記冷却タンクに貯留されている液の貯留量を検出する検出部、をさらに含み、
    　前記処理部は、前記液供給部からの前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、
    　前記制御部は、前記検出部によって前記貯留量が第１閾値に到達していることが検出されれば、前記処理部による前記基板に対する前記エッチング処理の実行を禁止する、基板処理装置。     The substrate processing apparatus according to claim 8, wherein
    The liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank,
    The processing unit discharges the first processing liquid to the liquid discharge unit in response to the supply of the processing liquid from the liquid supply unit,
    The substrate processing apparatus, wherein the control unit prohibits the processing unit from performing the etching process on the substrate when the storage unit detects that the storage amount has reached a first threshold value.
  10. 　請求項７に記載の基板処理装置であって、
    　前記液排出部は、さらに前記第１処理液を冷却する冷却タンクを含み、
    　前記液排出管部は、前記処理部と前記冷却タンクとを接続している第１部分と、前記冷却タンクに接続されており、前記基板処理装置の外まで液を排出するための第２部分と、を含み、
    　前記液排出部は、前記冷却タンクに貯留されている液の貯留量を検出する検出部、をさらに含み、
    　前記制御部は、前記検出部によって前記貯留量が第２閾値に到達していることが検出されれば、前記所定のタイミングでの前記液補充部による前記液排出部への前記第２処理液の補充の実行を禁止する、基板処理装置。     The substrate processing apparatus according to claim 7, wherein
    The liquid discharge unit further includes a cooling tank for cooling the first processing liquid,
    The liquid discharge pipe part is connected to the cooling part and a first part connecting the processing part and the cooling tank, and a second part for discharging the liquid to the outside of the substrate processing apparatus. And including,
    The liquid discharge unit further includes a detection unit that detects a storage amount of the liquid stored in the cooling tank,
    The control unit, when the detection unit detects that the storage amount has reached the second threshold value, the second processing liquid to the liquid discharge unit by the liquid replenishment unit at the predetermined timing. A substrate processing apparatus that prohibits execution of replenishment of the substrate.
  11. 　基板処理装置における基板処理方法であって、
    　処理部において処理液によって基板に対するエッチング処理を行うエッチング工程と、
    　液供給管部を介して前記処理部に前記処理液を供給する液供給工程と、
    　前記エッチング工程において使用された後の第１処理液を前記処理部から前記基板処理装置の外まで液排出管部を含む液排出部を介して排出する液排出工程と、
    　前記基板を構成する成分の溶解濃度が前記第１処理液よりも低い第２処理液を、液補充管部を介して前記液排出部に補充することで、前記第１処理液と前記第２処理液とを混ぜて混合溶液を生成する液補充工程と、を有する、基板処理方法。     A substrate processing method in a substrate processing apparatus, comprising:
    An etching step of etching the substrate with a processing liquid in the processing section,
    A liquid supply step of supplying the processing liquid to the processing section via a liquid supply pipe section,
    A liquid discharging step of discharging the first processing liquid used in the etching step from the processing section to the outside of the substrate processing apparatus through a liquid discharging section including a liquid discharging pipe section;
    By replenishing the liquid discharge portion with a second treatment liquid in which the dissolved concentration of the components forming the substrate is lower than that of the first treatment liquid, the first treatment liquid and the second treatment liquid are replenished. A substrate processing method, comprising: a liquid replenishing step of mixing with a processing liquid to generate a mixed solution.
  12. 　請求項１１に記載の基板処理方法であって、
    　前記液補充工程において、前記第２処理液を前記第１処理液に混ぜることで、前記混合溶液における前記基板を構成する成分の溶解濃度を溶解度未満とする、基板処理方法。     The substrate processing method according to claim 11, wherein
    A substrate processing method, wherein, in the liquid replenishing step, the second processing liquid is mixed with the first processing liquid so that the dissolved concentration of components constituting the substrate in the mixed solution is less than the solubility.
  13. 　請求項１１または請求項１２に記載の基板処理方法であって、
    　前記処理液は、燐酸水溶液を含み、
    　前記基板は、窒化珪素の膜を有し、
    　前記エッチング工程において、前記燐酸水溶液によって前記窒化珪素の膜を溶解させる、基板処理方法。     The substrate processing method according to claim 11 or 12, wherein
    The treatment liquid contains a phosphoric acid aqueous solution,
    The substrate has a silicon nitride film,
    A substrate processing method, wherein in the etching step, the silicon nitride film is dissolved by the phosphoric acid aqueous solution.
  14. 　請求項１１から請求項１３の何れか１つの請求項に記載の基板処理方法であって、
    　前記液供給工程において、前記液供給管部を介して前記処理部に前記第２処理液を供給する、基板処理方法。     The substrate processing method according to any one of claims 11 to 13,
    The substrate processing method, wherein in the liquid supply step, the second processing liquid is supplied to the processing unit via the liquid supply pipe section.
  15. 　請求項１１から請求項１４の何れか１つの請求項に記載の基板処理方法であって、
    　前記液排出工程において、前記処理部は、前記液供給工程における前記処理液の供給に応じて前記第１処理液を前記液排出部に排出し、
    　前記エッチング工程において前記エッチング処理を行う際に、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の２回以上の供給と、前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の２回以上の補充と、を同期させて実行する、基板処理方法。     The substrate processing method according to any one of claims 11 to 14,
    In the liquid discharging step, the processing unit discharges the first processing liquid to the liquid discharging unit according to the supply of the processing liquid in the liquid supplying step,
    When the etching process is performed in the etching step, the processing solution is supplied to the processing section at least twice through the solution supply tube section in the solution supply step, and the solution replenishment tube in the solution replenishment step. A method of processing a substrate, wherein the replenishment of the second processing liquid to the liquid discharging portion via a portion at least twice is performed in synchronization with each other.
  16. 　請求項１１から請求項１５の何れか１つの請求項に記載の基板処理方法であって、
    　前記液排出工程において、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の供給に応じて、前記第１処理液を前記処理部から前記液排出部に排出し、
    　前記エッチング工程における前記エッチング処理の前に、前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の補充を少なくとも１回実行し、
    　前記エッチング工程において前記エッチング処理を行う際に、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の供給を実行するとともに、前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の補充を実行する、基板処理方法。     The substrate processing method according to any one of claims 11 to 15, wherein
    In the liquid discharging step, the first processing liquid is discharged from the processing section to the liquid discharging section in response to the supply of the processing liquid to the processing section via the liquid supply pipe section in the liquid supplying step. ,
    Before the etching process in the etching process, replenishment of the second processing liquid to the liquid discharge unit via the liquid replenishment pipe unit in the liquid replenishment process is performed at least once.
    When performing the etching process in the etching process, the supply of the processing liquid to the processing unit via the liquid supply pipe unit in the liquid supply process is performed, and the liquid replenishment pipe unit in the liquid replenishment process is performed. A substrate processing method, wherein replenishment of the second processing liquid to the liquid discharge section is performed via a substrate.
  17. 　請求項１１から請求項１６の何れか１つの請求項に記載の基板処理方法であって、
    　前記エッチング工程における前記エッチング処理が実行された後であって、次の前記エッチング工程における前記エッチング処理が実行されるまでの期間に、所定のタイミングで前記液補充工程における前記液補充管部を介した前記液排出部への前記第２処理液の補充を実行する、基板処理方法。     The substrate processing method according to any one of claims 11 to 16, wherein
    After the etching process in the etching process is performed and before the etching process in the next etching process is performed, the liquid replenishment pipe portion in the liquid replenishment process is inserted at a predetermined timing. The substrate processing method, wherein the second processing liquid is replenished to the liquid discharge part.
  18. 　請求項１１から請求項１７の何れか１つの請求項に記載の基板処理方法であって、
    　前記液排出工程は、前記第１処理液を前記処理部から前記液排出管部に含まれた第１部分に排出する第１液排出工程と、前記液排出部に含まれ且つ前記第１部分に接続された冷却タンクにおいて前記第１処理液もしくは前記混合溶液を冷却する液冷却工程と、前記冷却タンクから前記液排出管部に含まれており且つ前記冷却タンクに接続された第２部分を介して前記混合溶液を前記基板処理装置の外まで排出する第２液排出工程と、を含む、基板処理方法。     The substrate processing method according to any one of claims 11 to 17,
    The liquid discharging step includes a first liquid discharging step of discharging the first processing liquid from the processing section to a first portion included in the liquid discharging pipe section, and the first portion included in the liquid discharging section. A liquid cooling step of cooling the first treatment liquid or the mixed solution in a cooling tank connected to the cooling tank; and a second portion included in the liquid discharge pipe portion from the cooling tank and connected to the cooling tank. And a second liquid discharging step of discharging the mixed solution to the outside of the substrate processing apparatus via the substrate processing method.
  19. 　請求項１８に記載の基板処理方法であって、
    　前記冷却タンクに貯留されている液の貯留量を検出する検出工程、をさらに有し、
    　前記液排出工程において、前記液供給工程における前記液供給管部を介した前記処理部への前記処理液の供給に応じて、前記第１処理液を前記処理部から前記液排出部に排出し、
    　前記検出工程において前記貯留量が第１閾値に到達していることが検出されれば、前記エッチング工程における前記エッチング処理の実行を禁止する、基板処理方法。     The substrate processing method according to claim 18, wherein
    Further comprising a detection step of detecting the storage amount of the liquid stored in the cooling tank,
    In the liquid discharging step, the first processing liquid is discharged from the processing unit to the liquid discharging unit according to the supply of the processing liquid to the processing unit via the liquid supply pipe unit in the liquid supplying process. ,
    A substrate processing method, wherein if the storage amount is detected to have reached a first threshold value in the detection step, execution of the etching process in the etching step is prohibited.
  20. 　請求項１７に記載の基板処理方法であって、
    　前記液排出工程は、前記第１処理液を前記処理部から前記液排出管部に含まれた第１部分に排出する第１液排出工程と、前記液排出部に含まれ且つ前記第１部分に接続された冷却タンクにおいて前記第１処理液もしくは前記混合溶液を冷却する液冷却工程と、前記冷却タンクから前記液排出管部に含まれており且つ前記冷却タンクに接続された第２部分を介して前記混合溶液を前記基板処理装置の外まで排出する第２液排出工程と、を含み、
    　前記基板処理方法は、前記冷却タンクに貯留されている液の貯留量を検出する検出工程、をさらに有し、
    　前記検出工程において前記貯留量が第２閾値に到達していることが検出されれば、前記液補充工程における前記所定のタイミングにおける前記液補充管部を介した前記液排出部への前記第２処理液の補充を禁止する、基板処理方法。     The substrate processing method according to claim 17, wherein
    The liquid discharging step includes a first liquid discharging step of discharging the first processing liquid from the processing section to a first portion included in the liquid discharging pipe section, and the first portion included in the liquid discharging section. A liquid cooling step of cooling the first treatment liquid or the mixed solution in a cooling tank connected to the cooling tank; and a second portion included in the liquid discharge pipe portion from the cooling tank and connected to the cooling tank. A second liquid discharging step of discharging the mixed solution to the outside of the substrate processing apparatus via
    The substrate processing method further includes a detection step of detecting a storage amount of the liquid stored in the cooling tank,
    When it is detected in the detection step that the storage amount has reached the second threshold value, the second discharge to the liquid discharge section via the liquid replenishment pipe section at the predetermined timing in the liquid replenishment step is performed. A substrate processing method in which replenishment of processing liquid is prohibited.
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