TW202027157A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

In order to provide a substrate processing technique in which crystallization of a component eluted from a substrate in a processing liquid hardly occurs in a path for discharging the processing liquid from a processing unit to the outside of a substrate processing apparatus, this substrate processing apparatus is provided with a processing unit, a liquid supply unit, a liquid discharging unit, a liquid replenishing unit, and a control unit. The processing unit performs an etching process on the substrate with the processing liquid. The liquid supply unit has a liquid supply pipe part which supplies the processing liquid to the processing unit. The liquid discharging unit has a liquid discharging pipe part for discharging a first processing liquid, which has been used in the etching process for the substrate by the processing unit, from the processing unit to the outside of the substrate processing apparatus. The liquid replenishing unit has a liquid replenishing pipe part connected to the liquid discharging unit in order to generate a mixed solution by replenishing the liquid discharging unit with a second processing liquid having lower concentration of a dissolved substrate-constituting component than the first processing liquid, and mixing the first processing liquid and the second processing liquid. The control unit controls the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharging unit by the liquid replenishing unit.

Description

Substrate processing device and substrate processing method

The present invention relates to the treatment of semiconductor wafers, liquid crystal display substrates, plasma display substrates, organic EL (Electroluminescence) substrates, FED (Field Emission Display) substrates, and light A technology for etching substrates such as display substrates, magnetic disk substrates, optical magnetic disk substrates, photomask substrates, and solar cell substrates.

There is known a substrate processing apparatus that performs an etching process on the substrate by immersing the substrate in a processing solution stored in a processing tank (for example, Patent Document 1, etc.). Here, for example, a treatment (etching treatment) is performed to elute the silicon nitride film formed on the surface of the substrate with a treatment solution such as an aqueous solution of phosphoric acid (H ₃ PO ₄ ) (aqueous phosphoric acid). In this apparatus, for example, a circulation line having a pump, a heater, and a filter for circulating the treatment liquid with respect to the treatment tank is provided. In addition, if the etching process of the substrate using the processing liquid is performed in the processing tank, the concentration of the eluted components eluted from the substrate in the processing liquid stored in the processing tank will increase. Furthermore, for example, the processing liquid with a high concentration of eluted components can be discharged out of the substrate processing apparatus through the waste line.

[Prior Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2018-6623

However, in the substrate processing apparatus described in Patent Document 1, for example, the processing liquid used in the etching process is sent from the processing tank to the cooling box, and after being cooled by the cooling box, it is removed by the waste line Discharge to the outside of the substrate processing equipment. In this case, for example, in the discard line, there are cases where the eluted component of the substrate in the processing liquid crystallizes and clogging of the discard line occurs.

For example, when the silicon nitride film formed on the surface of the substrate is etched with a treatment solution such as phosphoric acid aqueous solution, the silicon eluted from the substrate depends on the number of substrates to be processed and the etching process Time and so on, and gradually accumulated in the phosphoric acid aqueous solution. Then, the concentration of silicon in the phosphoric acid aqueous solution (also known as the concentration of siloxane (SiO ₂ component)) becomes higher. Here, for example, when the phosphoric acid aqueous solution is sent from the processing tank to the cooling box, and after being cooled by the cooling box, it is discharged from the waste line to the outside of the substrate processing apparatus, it is present in the waste line , The siloxane in the phosphoric acid aqueous solution will crystallize and cause the possibility of clogging of the waste line.

If such an unfavorable situation that the waste line is clogged occurs, for example, until the clogging of the waste line is resolved, the substrate processing device will become unusable.

Such a problem is not limited to the so-called batch type substrate processing apparatus that performs etching processing on the substrate by immersing the substrate in the processing solution stored in the processing tank. Generally speaking, the above-mentioned problem also occurs in the nozzle pair A substrate processing apparatus such as a so-called single-chip substrate processing apparatus in which the substrate discharges a processing liquid to perform etching processing using the processing liquid on the substrate.

The present invention has been accomplished in view of the above-mentioned problems, and its object is to provide a substrate processing technology in which the crystallization of the eluted components from the substrate in the processing liquid is difficult to occur in the path of the processing liquid discharged from the processing section toward the substrate processing apparatus.

In order to solve the above-mentioned problems, the substrate processing apparatus of the first aspect includes a processing unit, a liquid supply unit, a liquid discharge unit, a liquid replenishing unit, and a control unit. The above-mentioned processing unit performs etching processing on the substrate with a processing liquid. The liquid supply section has a liquid supply pipe section that supplies the processing liquid to the processing section. The liquid discharge part has a liquid discharge pipe part for discharging the first treatment liquid after the etching process on the substrate used in the treatment part from the treatment part to the outside of the substrate treatment apparatus. The liquid replenishing section is for replenishing the second processing liquid whose dissolved concentration of the components constituting the substrate is lower than that of the first processing liquid to the liquid discharge section, thereby mixing the first processing liquid and the second processing liquid to produce a mixture The solution has a liquid replenishing tube connected to the liquid discharge part. The control unit controls the supply of the processing liquid to the processing unit by the liquid supply unit and the replenishment of the second processing liquid to the liquid discharge unit by the liquid replenishing unit.

The substrate processing apparatus of the second aspect is the substrate processing apparatus of the first aspect, wherein the liquid replenishing unit mixes the second processing liquid with the first processing liquid to form the substrate in the mixed solution. The dissolved concentration of the ingredients has not reached the solubility.

The substrate processing apparatus of the third aspect is the substrate processing apparatus of the first or second aspect, wherein the processing solution includes an aqueous phosphoric acid solution, the substrate has a film of silicon nitride, and the etching treatment includes using the aqueous phosphoric acid solution The above-mentioned silicon nitride film dissolution treatment.

The substrate processing apparatus of the fourth aspect is the substrate processing apparatus of any one of the first to third aspects, wherein the liquid supply unit supplies the second processing liquid to the processing unit.

The substrate processing apparatus of the fifth aspect is the substrate processing apparatus of any one of the first to fourth aspects, wherein the processing section discharges the first processing liquid in response to the supply of the processing liquid from the liquid supply section To the liquid discharge section, when the control section performs the etching process on the substrate by the processing section, the processing liquid performed by the liquid supply section is supplied to the processing section twice or more, and the Two or more replenishments of the second processing liquid toward the liquid discharge section by the liquid replenishing section are performed simultaneously.

The substrate processing apparatus of the sixth aspect is the substrate processing apparatus of any one of the first to fifth aspects, wherein the processing section discharges the first processing liquid in response to the supply of the processing liquid from the liquid supply section To the liquid discharge section, the control section executes the replenishment of the second processing liquid by the liquid replenishing section toward the liquid discharge section at least once before performing the etching process on the substrate by the processing section, When the etching process of the substrate is performed by the processing section, the processing liquid performed by the liquid supply section is supplied to the processing section, and the second processing liquid performed by the liquid replenishing section is directed toward the The replenishment of the liquid discharge part is performed.

The substrate processing apparatus of the seventh aspect is the substrate processing apparatus of any one of the first to sixth aspects, wherein the control section is performed after the etching process of the substrate by the processing section is performed and to the next During the period until the etching process of the substrate by the processing section is executed, the liquid replenishing section causes the second processing liquid to be replenished toward the liquid discharge section at a predetermined time point.

The substrate processing apparatus of the eighth aspect is the substrate processing apparatus of any one of the first to seventh aspects, wherein the liquid discharge portion further includes a cooling box for cooling the first processing liquid, and the liquid discharge pipe portion It includes a first part connecting the processing part and the cooling box, and a second part connected to the cooling box for discharging liquid to the outside of the substrate processing apparatus.

The substrate processing apparatus of the ninth aspect is the substrate processing apparatus of the eighth aspect, wherein the liquid discharge section further includes a detection section that detects the amount of liquid stored in the cooling tank, and the processing section is based on The supply of the processing liquid from the liquid supply unit discharges the first processing liquid to the liquid discharge unit, and the control unit prohibits the processing when the detection unit detects that the storage amount reaches the first threshold The execution of the above-mentioned etching treatment on the above-mentioned substrate performed by the section.

The substrate processing apparatus of the tenth aspect is the substrate processing apparatus of the seventh aspect, wherein the upper The liquid discharge portion further includes a cooling tank for cooling the first processing liquid, and the liquid discharge pipe portion includes a first portion connecting the processing portion and the cooling tank, and is connected to the cooling tank for The liquid is discharged to the second part of the substrate processing apparatus. The liquid discharge section further includes a detection section that detects the storage amount of the liquid stored in the cooling tank. If the control section is detected by the detection section When the storage amount reaches the second threshold, the replenishment of the second treatment liquid toward the liquid discharge portion by the liquid replenishing unit at the predetermined time point is prohibited.

The substrate processing method of the eleventh aspect is a substrate processing method of a substrate processing apparatus, which includes an etching step, a liquid supply step, a liquid discharge step, and a liquid replenishing step. In the above-mentioned etching step, the substrate is etched with a processing liquid in the processing section. In the liquid supply step, the processing liquid is supplied to the processing section via a liquid supply pipe section. In the liquid discharge step, the first processing liquid used in the etching step is discharged from the processing section to the outside of the substrate processing apparatus through a liquid discharge section including a liquid discharge pipe section. In the liquid replenishing step, the second processing liquid whose dissolved concentration of the components constituting the substrate is lower than the first processing liquid is replenished to the liquid discharge portion through the liquid replenishing pipe portion, thereby mixing the first processing liquid and the The second treatment liquid generates a mixed solution.

The substrate processing method of the twelfth aspect is the substrate processing method of the eleventh aspect, wherein, in the liquid replenishing step, the second processing liquid is mixed with the first processing liquid to form the mixed solution The dissolved concentration of the components of the above-mentioned substrate does not reach the solubility.

The substrate processing method of the thirteenth aspect is the substrate processing method of the eleventh or twelfth aspect, wherein the processing liquid contains an aqueous phosphoric acid solution, and the substrate has a silicon nitride film on the substrate. In the etching step, the silicon nitride film is dissolved by the phosphoric acid aqueous solution.

The substrate processing method of the fourteenth aspect is the substrate processing method of any one of the eleventh to thirteenth aspects, wherein, in the liquid supply step, the second processing liquid is supplied to the processing section via the liquid supply pipe section.

The substrate processing method of the fifteenth aspect is the substrate processing method of any one of the eleventh to fourteenth aspects, wherein, in the liquid discharging step, the processing unit performs the processing based on the supply of the processing liquid in the liquid supply step The first processing liquid is discharged to the liquid discharge portion, and when the etching process is performed in the etching step, the processing liquid is supplied through the liquid supply pipe portion in the liquid supply step toward the processing portion twice or more, In the liquid replenishing step, two or more replenishments of the second processing liquid to the liquid discharge portion via the liquid replenishing tube portion are performed simultaneously.

The substrate processing method of the sixteenth aspect is the substrate processing method of any one of the eleventh to fifteenth aspects, wherein, in the liquid discharging step, in response to the processing liquid passing through the liquid supply pipe portion in the liquid supply step To the supply of the processing section, the first processing liquid is discharged from the processing section to the liquid discharge section, and before the etching processing in the etching step, the liquid replenishing step is performed at least once through the liquid replenishing pipe section. The replenishment of the second processing liquid toward the liquid discharge portion is performed when the etching process is performed in the etching step, the supply of the processing liquid to the processing portion via the liquid supply pipe portion in the liquid supply step is performed, and In the liquid replenishing step, the second processing liquid via the liquid replenishing tube portion is replenished toward the liquid discharge portion.

The substrate processing method of the seventeenth aspect is the substrate processing method of any one of the eleventh to the sixteenth aspects, wherein the etching process is performed after the etching process is performed in the etching step and to the subsequent etching step During the period until execution, the replenishment of the second processing liquid via the liquid replenishing tube portion to the liquid discharge portion in the liquid replenishing step is performed at a predetermined time.

The substrate processing method of the eighteenth aspect is the substrate processing method of any one of the eleventh to the seventeenth aspects, wherein the liquid discharge step includes: discharging the first processing liquid from the processing section to the liquid discharge pipe section The first liquid discharge step of the included first part, the liquid cooling step of cooling the first processing liquid or the mixed solution contained in the liquid discharge part and connected to the cooling tank connected to the first part, And a second liquid discharge step of discharging the mixed solution from the cooling tank to the outside of the substrate processing apparatus via a second portion included in the liquid discharge pipe portion and connected to the cooling tank.

The substrate processing method of the 19th aspect is the substrate processing method of the 18th aspect, wherein it further has a detection step of detecting the storage amount of the liquid stored in the cooling tank, and the liquid discharge step corresponds to In the liquid supply step, the processing liquid is supplied to the processing section via the liquid supply pipe section, and the first processing liquid is discharged from the processing section to the liquid discharge section. If the processing liquid is detected in the detection step When the storage amount reaches the first threshold, the execution of the etching process in the etching step is prohibited.

The substrate processing method of the 20th aspect is the substrate processing method of the 17th aspect, in which, The liquid discharging step includes: a first liquid discharging step of discharging the first treatment liquid from the treatment part to the first part included in the liquid discharge pipe part; and the liquid discharging part is included in the liquid discharging part and connected to the In the cooling tank of the first part, the liquid cooling step of cooling the first processing liquid or the mixed solution, and from the cooling tank through the second part which is included in the liquid discharge pipe and connected to the cooling tank The mixed solution is discharged to a second liquid discharge step outside of the substrate processing apparatus, and the substrate processing method further has a detection step of detecting the amount of liquid stored in the cooling tank, if in the detection step When it is detected that the storage amount reaches the second threshold value, the replenishment of the second processing liquid via the liquid replenishing tube portion to the liquid discharge portion at the predetermined time in the liquid replenishing step is prohibited.

Regardless of the substrate processing apparatus according to the first aspect and the substrate processing method according to the eleventh aspect, for example, when the first processing liquid is discharged from the substrate processing apparatus from the processing section, the components constituting the substrate can be dissolved The second treatment liquid having a relatively low concentration is mixed with the first treatment liquid and discharged. Thereby, for example, in a path through which the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus, crystallization of the eluted components from the substrate in the processing liquid will hardly occur.

Regardless of the substrate processing apparatus according to the second aspect and the substrate processing method according to the twelfth aspect, for example, dissolving the components constituting the substrate in the mixed solution produced by mixing the second processing liquid with the first processing liquid The concentration has not reached the solubility, whereby the crystallization of the eluted components from the substrate in the processing liquid will hardly occur in the path through which the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus.

Regardless of the substrate processing apparatus according to the third aspect and the substrate processing method according to the 13th aspect, for example, when the first aqueous phosphoric acid solution is discharged from the processing section to the outside of the substrate processing apparatus, the dissolved concentration of silicon can be relatively The lower second phosphoric acid aqueous solution is mixed with the first phosphoric acid aqueous solution and discharged. Thereby, for example, in a path through which the phosphoric acid aqueous solution is discharged from the processing section toward the outside of the substrate processing apparatus, crystallization of silicone will hardly occur.

Regardless of the substrate processing apparatus according to the fourth aspect and the substrate processing method according to the fourteenth aspect, for example, the second processing liquid supplied to the processing section can also be used for mixing with the first processing in the liquid discharge section The purpose of the liquid. Thereby, for example, it can be configured between a liquid supply part that supplies the second treatment liquid to the treatment part and a liquid replenishment part for replenishing the second treatment liquid mixed with the first treatment liquid in the liquid discharge part. At least part of it is shared. As a result, for example, the structure of the substrate processing apparatus can be simplified.

Regardless of the substrate processing apparatus according to the fifth aspect and the substrate processing method according to the fifteenth aspect, for example, when the substrate is etched by the processing portion, the processing liquid can be directed to the processing portion twice or more. Simultaneously with the supply, the first processing liquid is discharged from the processing section toward the liquid discharge section twice or more, and the second processing liquid is replenished toward the liquid discharge section twice or more. Thereby, for example, the dissolved concentration of the components constituting the substrate in the mixed solution generated in the liquid discharge portion can be easily uniformized. As a result, for example, in a path through which the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus, crystallization of the eluted components from the substrate in the processing liquid will hardly occur.

Regardless of the substrate processing apparatus according to the sixth aspect and the substrate processing method according to the sixteenth aspect, for example, before the etching process is performed, the second processing liquid is directed to the liquid at least once. The supply of the volume discharge part allows the first treatment liquid discharged from the treatment part and the second treatment liquid from the liquid replenishing part to be easily mixed during the etching process. Thereby, for example, in a path through which the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus, crystallization of the eluted components from the substrate in the processing liquid will hardly occur.

Regardless of the substrate processing apparatus according to the seventh aspect and the substrate processing method according to the seventeenth aspect, for example, the etching process is not performed during the period of two or more etching processes on the substrate performed by the process section During the interval, the second treatment liquid is replenished to the liquid discharge part at a predetermined time. Thereby, for example, in a path through which the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus, crystallization of the eluted components from the substrate in the processing liquid will hardly occur.

Regardless of the substrate processing apparatus according to the eighth aspect and the substrate processing method according to the eighteenth aspect, for example, even if the first processing liquid is cooled in the cooling box, the processing liquid is discharged from the processing section toward the outside of the substrate processing apparatus. In the path, the crystallization of the eluted components from the substrate in the treatment liquid will still be difficult to occur.

Regardless of the substrate processing apparatus according to the 9th aspect and the substrate processing method according to the 19th aspect, for example, if a liquid above the first threshold is stored in the cooling box, it will not be executed in the processing section. The etching process of the substrate where the processing liquid is supplied and the first processing liquid is discharged. Thereby, it is possible to suppress the occurrence of problems caused by the etching process that cannot discharge the first processing liquid from the processing section to the liquid discharge section when performing the etching processing on the substrate, for example.

Regardless of the substrate processing apparatus according to the 10th aspect and the substrate processing method according to the 20th aspect For example, if a liquid above the second threshold is stored in the cooling tank, the second process will not be executed at a predetermined time during the interval when the etching process performed by the process section is not performed The liquid is replenished toward the liquid discharge part. Thereby, for example, when the substrate is etched after the interval period, the occurrence of defects caused by the etching process that cannot discharge the first processing liquid from the processing section to the liquid discharge section can be suppressed.

1: Input Department

2: Transport Department 1

3: The second transfer department

4: Drying department

5: The first liquid treatment department

6: The second liquid treatment department

7: Delivery department

8: Input section

9: Output section

10: Control Department

10a: Computing Department

10b: Memory

10c: Storage Department

10d: timer

11: Mounting table

30: holding part

30f: upper surface

40: Rotating mechanism

40m: Rotary drive unit

40s: rotating fulcrum

50: nozzle

51: Washing treatment department

52, 52B: Chemical liquid treatment department

52s: Sensor part

53: Deputy Transport Department

71: Placing Table

100: Substrate processing device

AL1, AL1B: Liquid Replenishment Department

Ax1: Rotation axis

B1a: 1st inner tank

B1b: The first outer tank

B2a: 2nd inner tank

B2b: 2nd outer tank

Bs1: bottom surface

C1: Box

CB1: adjustment slot

CB2: Chemical liquid treatment tank

Cf1: The first flow control unit

Cf2: The second flow control unit

Cf3: The third flow control section

CL1: The first liquid circulation part

CL2: The second liquid circulation part

CP2: Chemical liquid processing unit

Ct1: cooling box

EL1, EL1A, EL1B: Liquid discharge part

En0: Treatment liquid supply source

Ex0: Treatment liquid output part

Fl1: filter

Fr0, Fr1: flow

Ht1: No. 1 heater

Ht2: 2nd heater

LF2: Lift

Lv1~Lv4: 1st~4th storage volume

M1: The first flow meter

M2: 2nd flow meter

M3: 3rd flow meter

M4: Inspection Department

P0, P0s, P1: period

P2~P4: 1~3 scheduled time

Pm1: Pump 1

Pm2: 2nd pump

SB1: adjustment slot

SL1: The first liquid supply part

SL2: Second liquid supply part

SL2B: Liquid supply part

t0a~t0d, t1a~t1b, t3a~t3f, t4a~t4e, t6a~t6g: time

Tb1~Tb11: 1st~11th piping part

Tg1: Liquid discharge pipe

Us1: upper surface

V1~V10: 1st~10th valve

W: substrate

Fig. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to the first embodiment.

Fig. 2 is a block diagram showing the functional configuration of the substrate processing apparatus of the first embodiment.

Fig. 3 is a diagram showing a schematic configuration of a chemical solution processing unit.

Fig. 4 is a flowchart showing an example of the operation flow of the etching process.

Figures 5(a) and (b) are sequence diagrams of an example of preprocessing operations.

Fig. 6 (a) and (b) are sequence diagrams of an example of the operation of the main processing.

Fig. 7 is a flowchart showing an example of the operation flow of the main process.

Figures 8 (a) and (b) are diagrams for explaining the action of the liquid replenishing process during the interval.

Fig. 9 is a diagram for explaining the amount of storage in the cooling box to be monitored.

Fig. 10 (a) and (b) are diagrams for explaining the action of the liquid replenishing process during the interval based on the monitoring result of the storage capacity of the cooling tank.

Fig. 11 (a) and (b) are diagrams for explaining the operation of monitoring during the non-execution period of the liquid replenishment process during the interval.

Figures 12 (a) and (b) are diagrams for explaining the operation of monitoring the execution time of the liquid replenishment process during the interval.

Figure 13 (a) and (b) are diagrams for explaining the prohibited actions of the circulation process based on the monitoring result of the storage capacity of the cooling box.

Fig. 14 (a) to (c) are time sequence diagrams of changes in the execution time of the circulation process and the liquid replenishment process.

FIG. 15 is a diagram showing an example of the operation flow of the first modification at the execution time of the circulation process and the liquid replenishing process.

Fig. 16 is a diagram showing a schematic configuration of a chemical solution treatment section of a modification.

FIG. 17 is a diagram showing an example of the configuration of the liquid chemical processing section in the single-chip substrate processing apparatus of a modified example.

Hereinafter, embodiments and modifications of the present invention will be described based on the drawings. In the drawings, the same symbols are used for parts with the same structure and function, and repeated descriptions are omitted in the following description. In addition, the drawings are only shown schematically, and do not accurately illustrate the dimensions and positional relationships of various structures in the drawings.

<1. The first embodiment>

<1-1. Composition of substrate processing equipment>

FIG. 1 is a plan view showing an example of a schematic configuration of a substrate processing apparatus 100 according to the first embodiment. FIG. 2 is a block diagram showing an example of the functional configuration of the substrate processing apparatus 100 of the first embodiment. The substrate processing apparatus 100 can perform chemical solution processing, cleaning processing, and drying processing on the substrate W, for example.

As shown in FIG. 1, the substrate processing apparatus 100 includes, for example, an input section 1, a first conveying section 2, a second conveying section 3, a drying processing section 4, a first liquid processing section 5, a second liquid processing section 6, and a delivery section. 7. Input unit 8, output unit 9, and control unit 10.

The input portion 1 is, for example, a portion for inputting a plurality of substrates W before processing into the substrate processing apparatus 100 from outside the substrate processing apparatus 100. The input unit 1 has, for example, two mounting tables 11 that can respectively mount a cassette C1 containing a plurality of (for example, 25) substrates W before processing.

The sending part 7 is, for example, a part for sending a plurality of processed substrates W from the inside of the substrate processing apparatus 100 to the outside of the substrate processing apparatus 100. The sending part 7 is located adjacent to the input part 1, for example. The delivery unit 7 has, for example, two mounting tables 71 on which the cassettes C1 can be respectively mounted. In the delivery section 7, in a state where a plurality of (for example, 25) processed substrates W are stored in the cassette C1, the processed substrate W together with the cassette C1 can be delivered to the substrate processing apparatus 100. outer.

The first conveying unit 2 exists, for example, at a position along the input unit 1 and the delivery unit 7. The first transport unit 2 can take out all the substrates W contained in the cassette C1 placed on the input unit 1, and transport the second transport unit 3, for example. In addition, the first transport section 2 can receive the processed substrate W from the second transport section 3, and transport the processed substrate W to the cassette C1 placed on the mounting table 71 of the delivery section 7, for example. It is stored in the cassette C1. Here, the 1st conveyance part 2 may recognize the batch of the board|substrate W for every cassette C1, and may measure the number of sheets of the board|substrate W accommodated in the cassette C1, for example.

The second conveying unit 3 can move along the longitudinal direction of the substrate processing apparatus 100, for example. Along the moving direction of the second conveying section 3, the drying processing section 4, the first liquid processing section 5, and the second liquid processing section 6 are sequentially provided from the side close to the first conveying section 2. In other words, example For example, the first liquid treatment part 5 exists at a position adjacent to the drying treatment part 4, and the second liquid treatment part 6 exists at a position adjacent to the first liquid treatment part 5.

The drying processing unit 4 can store and dry a plurality of substrates W in a low-pressure chamber, for example.

The first liquid processing unit 5 includes, for example, a washing processing unit 51, a chemical solution processing unit 52, and a sub-conveying unit 53. The cleaning processing unit 51 may perform cleaning processing (also referred to as pure water cleaning processing) on the plurality of substrates W with pure water, for example. The chemical solution processing unit 52 can, for example, perform processing (also referred to as chemical solution processing) on a plurality of substrates W with a processing solution containing a chemical solution. For example, the sub-conveying unit 53 can transfer the substrate W to and from the second conveying unit 3, and can move up and down in each of the washing treatment unit 51 and the chemical solution treatment unit 52.

The second liquid processing unit 6 includes, for example, a washing processing unit 51, a chemical solution processing unit 52, and a sub-conveying unit 53, similarly to the first liquid processing unit 5, for example.

The input part 8 is located near the mounting table 11, for example. The input unit 8 is, for example, a part for the operator to select or input various information. The input unit 8 is constituted by, for example, a touch panel or the like. In addition, the input unit 8 may have an operation unit including buttons that can perform various operations such as pressing, or a microphone that can perform input by voice. For example, by operating the input unit 8, the operator can individually designate, for each cassette C1 (batch), a recipe that is pre-stored in the storage unit 10c of the control unit 10, etc., to specify a procedure for processing the substrate.

The output part 9 is located close to the mounting table 11, for example. The output unit 9 is, for example, a part that can output various information under the control of the control unit 10. The output unit 9 may include, for example, a display unit capable of visually outputting various information, and a speaker capable of audibly outputting various information. The various information may include, for example, information indicating various states of the substrate processing apparatus 100 and information indicating various alarm signals (alarms).

The operation of the substrate processing apparatus 100 having the above-mentioned configuration is controlled in a comprehensive manner by the control unit 10 as shown in, for example, FIG. 2. The control unit 10 includes, for example, a calculation unit 10a, a memory 10b, a storage unit 10c, a timer 10d, and the like.

The arithmetic unit 10a can be applied to circuits such as a central processing unit (CPU; Central Processing Unit) operating as at least one processor, for example.

The memory 10b may be a circuit for temporarily storing information, such as a random access memory (RAM; Random Access Memory), for example. Various information temporarily obtained by various operations of the computing unit 10a are appropriately stored in the memory 10b and the like.

The storage unit 10c can be a non-volatile storage medium such as a hard disk or flash memory for storing various information. In the storage unit 10c, for example, various programs such as a plurality of types of recipes and schedule creation programs and processing programs are stored in advance. The arithmetic unit 10a realizes various functional configurations for performing comprehensive control of the operations of the substrate processing apparatus 100 performed by the control unit 10 by reading and executing programs stored in the storage unit 10c, for example. Various functional configurations include, for example, a scheduling unit that creates a process for processing a plurality of substrates W in the substrate processing apparatus 100 and executes the process for the plurality of substrates W according to the schedule. The processing execution unit of the processing.

The timer 10d can measure various times, for example. The timer 10d may also be a functional configuration realized by the computing unit 10a.

The control unit 10 may also control the operations of each part of the first liquid processing unit 5 and the second liquid processing unit 6 based on the measurement results from the various sensor units 52s of the chemical liquid processing unit 52, for example. The sensor unit 52s includes, for example, a first flow meter M1, a second flow meter M2, a third flow meter M3, a detection unit M4, and the like described later.

<1-2. Chemical Solution Processing Department>

FIG. 3 is a diagram showing the schematic configuration of the chemical solution processing unit 52. The chemical solution processing section 52 is, for example, selectively nitriding by immersing the substrate W on which the silicon oxide film and the silicon nitride film are formed in a phosphoric acid aqueous solution that functions as an etching solution. It is a wet etching device for the treatment of dissolving silicon film (also called etching treatment).

As shown in FIG. 3, the liquid chemical treatment unit 52 includes an adjustment tank CB1, a first liquid supply part SL1, a first liquid circulation part CL1, a liquid chemical treatment tank CB2, a second liquid supply part SL2, and a second liquid circulation part CL2. , Liquid discharge part EL1 and liquid replenishment part AL1.

The adjustment tank CB1 is, for example, for adjusting the temperature of the phosphoric acid aqueous solution supplied to the chemical solution processing tank CB2. The adjustment tank CB1 has a double structure composed of a first inner tank B1a and a first outer tank B1b. The first inner tank B1a stores an aqueous phosphoric acid solution that functions as an etching solution, and the first outer tank B1b recovers From the first inner tank B1a The phosphoric acid aqueous solution overflowing from the upper part. The first inner tank B1a is, for example, a member formed of a quartz or fluororesin material having excellent corrosion resistance to an aqueous phosphoric acid solution and having a rectangular box shape in a plan view. The first outer groove B1b is formed of, for example, the same material as the first inner groove B1a, and is located at a position that surrounds the upper end of the outer circumference of the first inner groove B1a.

The first liquid supply part SL1 can perform, for example, a process (also referred to as a first liquid supply process) of supplying a new process liquid sent from the process liquid supply source En0 to the adjustment tank CB1 via the first piping part Tb1. Here, for example, a new solution of a phosphoric acid aqueous solution (also referred to as a pre-use phosphoric acid aqueous solution) that is a chemical solution that functions as an etching solution is supplied as the treatment liquid. The processing liquid supply source En0 is connected to communicate with the first end of the first piping portion Tb1. The processing liquid supply source En0 presses the phosphoric acid aqueous solution, for example, by a pump or gas, from a tank that stores the phosphoric acid aqueous solution at a normal temperature (for example, 25°C) installed inside or outside the substrate processing apparatus 100 toward the first piping portion Tb1. give away. A first flow control unit Cf1 is provided in the first piping part Tb1. The first flow control unit Cf1 has, for example, a first valve V1 that opens and closes the flow path of the first piping portion Tb1, and a first flow meter M1 that measures the flow rate of the phosphoric acid aqueous solution. The second end of the first piping portion Tb1 is connected so as to communicate with the first outer tank B1b of the adjustment tank CB1, for example. In the first liquid supply part SL1, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 passes through the first piping part Tb1 and is supplied to the first outer tank B1b at the flow rate set by the first flow control part Cf1.

The first liquid circulation part CL1 can perform, for example, a process of heating the phosphoric acid aqueous solution discharged from the adjustment tank CB1 and pressure-circulating it again to the adjustment tank CB1 (also referred to as a first liquid circulation process). The first liquid circulation part CL1 has, for example, a second piping part Tb2 connected so as to communicate with the first outer tank B1b and the first inner tank B1a. The second piping part Tb2 has, for example, The first end connected to the bottom of the first outer tank B1b and the second end connected to the bottom of the first inner tank B1a. The second piping portion Tb2 is provided with a second valve V2, a first pump Pm1, and a first heater Ht1 in this order from the upstream side. The second valve V2 opens and closes the flow path of the second piping portion Tb2. The first pump Pm1 pressure-feeds the phosphoric acid aqueous solution drawn from the first outer tank B1b toward the first inner tank B1a via the second piping portion Tb2. The first heater Ht1 heats the phosphoric acid aqueous solution flowing in the second piping portion Tb2 to a predetermined temperature (for example, about 160°C). Moreover, the 1st liquid circulation part CL1 may have the 3rd piping part Tb3 which heats the phosphoric acid aqueous solution discharged from the 1st inner tank B1a, and circulates it to the 1st inner tank B1a, for example. For example, the third piping portion Tb3 may have a first end connected to communicate with the first inner tank B1a and a portion that communicates between the second valve V2 and the first pump Pm1 in the second piping portion Tb2. The form of the second end of the connection. Here, the 3rd piping part Tb3 is provided in the form which merged with the 2nd piping part Tb2. A third valve V3 is provided in the third piping portion Tb3, and the third valve V3 opens and closes the flow path of the third piping portion Tb3.

The chemical solution processing tank CB2 is, for example, a portion (also referred to as a processing portion) that performs etching processing on the substrate W by a phosphoric acid aqueous solution that functions as an etching solution. The chemical solution processing tank CB2 has, for example, a double structure composed of a second inner tank B2a and a second outer tank B2b like the adjustment tank CB1. The second inner tank B2a stores an aqueous phosphoric acid solution as an etching solution and immerses the substrate W In the phosphoric acid aqueous solution, the second outer tank B2b recovers the phosphoric acid aqueous solution overflowing from the upper part of the second inner tank B2a. The second inner tank B2a is, for example, the same as the first inner tank B1a, and is formed of, for example, a quartz or fluororesin material having excellent corrosion resistance to a phosphoric acid aqueous solution, and is a member having a rectangular box shape in a plan view. The total amount (capacity) of the liquid that can be stored in the liquid chemical treatment tank CB2 is set to about 60 liters, for example. Outside 2 The groove B2b is also formed of the same material as the second inner groove B2a, for example, like the first outer groove B1b, and is located at a position that surrounds the upper end of the outer circumference of the second inner groove B2a.

In addition, a lifter LF2 for immersing the substrate W in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2 is provided in the chemical solution processing tank CB2. The elevator LF2 holds a plurality of (for example, 50) substrates W arranged in parallel with each other in a standing posture (posture where the normal line of the substrate main surface is along the horizontal direction) by three holding rods, for example. The elevator LF2 is installed so that it can be raised and lowered in a vertical direction by a lifting mechanism (not shown). The lifter LF2 lifts, for example, the held plural substrates W between the processing position (position in FIG. 3) where it is immersed in the phosphoric acid aqueous solution in the second inner tank B2a and the transfer position pulled up from the phosphoric acid aqueous solution . In the chemical solution processing tank CB2, for example, by placing a plurality of substrates W at the processing position in the second inner tank B2a and immersing them in the phosphoric acid aqueous solution, the substrate W can be nitridated by the phosphoric acid aqueous solution. Etching treatment to dissolve silicon film. At this time, silicon, which is a component (also referred to as a substrate component) constituting the substrate W, is eluted from the substrate W to the phosphoric acid aqueous solution stored in the second inner tank B2a.

The second liquid supply part SL2 can perform, for example, a process (also referred to as a second liquid supply process) of supplying a phosphoric acid aqueous solution before use as a treatment liquid to a chemical solution treatment tank CB2 as a treatment part, and the treatment liquid functions as an etching liquid Features. The second liquid supply part SL2 has, for example, a fourth pipe part Tb4 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution sent from the adjustment tank CB1 to the chemical solution processing tank CB2 via the fourth pipe part Tb4. The fourth piping portion Tb4 has, for example, a first end that is connected to the portion between the first heater Ht1 of the second piping portion Tb2 and the adjustment tank CB1, and is connected to the second outer tank B2b. The second end of the connection. In other words, the fourth piping portion Tb4 is the second piping portion Tb2 The branched piping department. In the fourth piping portion Tb4, for example, the phosphoric acid aqueous solution is pressure-fed from the first end toward the second end by the first pump Pm1. A second flow control unit Cf2 is provided in the fourth piping portion Tb4. The second flow rate control unit Cf2 has, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter M2 that measures the flow rate of the phosphoric acid aqueous solution. In the second liquid supply part SL2, for example, the phosphoric acid aqueous solution supplied from the adjustment tank CB1 passes through the fourth piping part Tb4 and is supplied to the second outer tank B2b at the flow rate set by the second flow control part Cf2.

The second liquid circulation part CL2 can perform, for example, a process of heating the phosphoric acid aqueous solution discharged from the chemical solution treatment tank CB2 and pressure-circulating it again to the chemical solution treatment tank CB2 (also referred to as a second liquid circulation process). The second liquid circulation part CL2 has, for example, a fifth piping part Tb5 that connects the second outer tank B2b and the second inner tank B2a. For example, the fifth piping portion Tb5 has a first end connected to communicate with the bottom of the second outer tank B2b, and a second end connected to communicate with the bottom of the second inner tank B2a. The fifth piping part Tb5 is provided with a fifth valve V5, a second pump Pm2, a sixth valve V6, a second heater Ht2, and a filter F11 in this order from the upstream side. The fifth valve V5 opens and closes the flow path of the fifth piping portion Tb5. The second pump Pm2 pressure-feeds the phosphoric acid aqueous solution drawn from the second outer tank B2b toward the second inner tank B2a via the fifth piping portion Tb5. The sixth valve V6 opens and closes the flow path of the fifth piping portion Tb5. The second heater Ht2 heats the phosphoric acid aqueous solution flowing in the fifth pipe part Tb5 to a predetermined temperature (for example, about 160°C). The filter F11 is a filter for filtration for removing foreign matter in the phosphoric acid aqueous solution flowing in the fifth piping portion Tb5. Moreover, the 2nd liquid circulation part CL2 may have the 6th piping part Tb6 which heats the phosphoric acid aqueous solution discharged from the 2nd inner tank B2a, and circulates it to the 2nd inner tank B2a, for example. In this case, for example, the sixth piping portion Tb6 can be provided to communicate with the second inner tank B2a. The first end to be connected and the second end to be connected so as to communicate with the portion between the fifth valve V5 and the second pump Pm2 in the fifth piping portion Tb5. A seventh valve V7 is provided in the sixth piping portion Tb6, and the seventh valve V7 opens and closes the flow path of the sixth piping portion Tb6.

The liquid discharge part EL1 is, for example, a phosphoric acid aqueous solution (also referred to as a first treatment liquid) that will be used as a treatment liquid (also referred to as a first treatment liquid) to be used in the chemical liquid treatment tank CB2 as a treatment part after the etching treatment on the substrate W The finished phosphoric acid aqueous solution, also referred to as the first phosphoric acid aqueous solution, is discharged from the chemical solution processing tank CB2 to the portion of the processing (also referred to as liquid discharge processing) outside the substrate processing apparatus 100. The used phosphoric acid aqueous solution is in a state where the substrate component (such as silicon) is dissolved at a higher concentration (also referred to as the dissolved concentration) than the phosphoric acid aqueous solution before use due to the etching process of the substrate W in the chemical solution processing tank CB2. The liquid discharge portion EL1 has, for example, a seventh pipe portion Tb7, an eighth pipe portion Tb8, a cooling tank Ct1, and a ninth pipe portion Tb9. Here, the seventh piping part Tb7, the eighth piping part Tb8, and the ninth piping part Tb9 constitute a part (also called a liquid discharge pipe) for discharging the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100 Part) Tg1.

The seventh piping portion Tb7 has, for example, a first end that is connected to the portion between the second pump Pm2 and the sixth valve V6 in the fifth piping portion Tb5, and is connected to the cooling box Ct1. The second end of the connection. In other words, the seventh piping portion Tb7 and the fifth piping portion Tb5 together constitute a portion (also referred to as a first portion) that connects the liquid chemical treatment tank CB2 and the cooling tank Ct1. An eighth valve V8 is provided in the seventh piping portion Tb7. The eighth valve V8 opens and closes the flow path of the seventh piping portion Tb7. Therefore, by appropriately controlling the opening and closing of the sixth valve V6 and the eighth valve V8, it is possible to selectively heat the phosphoric acid solution discharged from the chemical solution treatment tank CB2. The liquid is compressed and recirculated to the chemical liquid processing tank CB2 (second liquid circulation processing), and the used phosphoric acid aqueous solution is discharged from the chemical liquid processing tank CB2 through the cooling box Ct1 to the outside of the substrate processing apparatus 100 (liquid discharge deal with).

The eighth piping part Tb8 has, for example, a first end connected to communicate with the upper part of the second outer tank B2b of the chemical liquid processing tank CB2, and a second end connected to communicate with the cooling tank Ct1. In other words, the eighth piping portion Tb8 constitutes a portion (also referred to as a first portion) that connects the liquid chemical treatment tank CB2 and the cooling tank Ct1. Here, the eighth piping portion Tb8 can be used, for example, when the amount of phosphoric acid aqueous solution stored in the second outer tank B2b of the chemical solution processing tank CB2 is excessively increased, so that the phosphoric acid aqueous solution does not overflow from the second outer tank B2b. The phosphoric acid aqueous solution flows from the second outer tank B2b to the cooling box Ct1. In addition, for example, when the storage amount of the phosphoric acid aqueous solution stored in the first outer tank B1b of the adjustment tank CB1 is excessively increased, the phosphoric acid aqueous solution can be removed from the first outer tank B1b so that the phosphoric acid aqueous solution does not overflow from the first outer tank B1b. The outer tank B1b flows to the 10th pipe part Tb10 of the cooling box Ct1. In this case, the tenth piping portion Tb10 has a first end connected so as to communicate with the upper portion of the first outer tank B1b of the adjustment tank CB1, and a communication that communicates in a manner that merges with the eighth piping portion Tb8 Way to connect the second end.

The cooling box Ct1 can store and cool the used phosphoric acid aqueous solution. The cooling tank Ct1 is provided with a detecting part M4 for detecting the storage amount of the liquid stored in the cooling tank Ct1. For the detection unit M4, for example, a liquid level gauge or the like can be applied.

The ninth piping part Tb9 is connected to, for example, the cooling box Ct1, and constitutes a part (also referred to as a second part) for discharging the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100. Match 9 The tube portion Tb9 has, for example, a first end connected to the cooling box Ct1, and a second end connected to a part (also referred to as a processing liquid output portion) Ex0 for outputting the used phosphoric acid aqueous solution to the outside of the substrate processing apparatus 100 unit. The processing liquid output part Ex0 can be used, for example, a tank for recovering the phosphoric acid aqueous solution (also referred to as a recovery tank) or a bucket for discarding the phosphoric acid aqueous solution (also referred to as a drain tank) that can be detached from the substrate processing apparatus 100, or Used to connect to the drainage pipes of the factory's drainage treatment facilities. For example, a ninth valve V9 is provided in the ninth piping portion Tb9. The ninth valve V9 can open and close the flow path of the ninth piping portion Tb9. Here, the output of the phosphoric acid aqueous solution from the cooling tank Ct1 to the processing liquid output portion Ex0 can be adjusted by the ninth valve V9.

The liquid replenishing part AL1 can perform, for example, a process of replenishing the pre-use phosphoric acid aqueous solution (also referred to as the second phosphoric acid aqueous solution) as the second processing liquid from the processing liquid supply source En0 to the liquid discharge section EL1 (also referred to as liquid replenishing processing). Thereby, the used phosphoric acid aqueous solution as the first treatment liquid and the pre-use phosphoric acid aqueous solution as the second treatment liquid can be mixed to produce an aqueous phosphoric acid solution (also referred to as a mixed phosphoric acid aqueous solution) as a mixed solution. Here, the phosphoric acid aqueous solution before use is in a state where the dissolved concentration of the substrate component (such as silicon) is lower than that of the used phosphoric acid aqueous solution. Therefore, the mixed phosphoric acid aqueous solution becomes a state where the dissolved concentration of the substrate component (such as silicon) is lower than that of the used phosphoric acid aqueous solution. In other words, by using the phosphoric acid aqueous solution to be replenished to the liquid discharge part EL1 by the liquid replenishing part AL1 before use, the used phosphoric acid aqueous solution discharged from the liquid discharge part EL1 can be used as a mixed phosphoric acid aqueous solution that has reduced the dissolved concentration of the substrate components. The cooling tank Ct1 is sent to the processing liquid output part Ex0 via the ninth piping part Tb9. The liquid replenishing part AL1 has, for example, the eleventh piping part Tb11 as a liquid replenishing pipe part connected to the liquid discharge part EL1. The eleventh piping part Tb11 has, for example, a first end connected to the processing liquid supply source En0, and a second end connected so as to communicate in a manner that it merges with the eighth piping part Tb8. The eleventh piping part Tb11 is provided with a third Flow control unit Cf3. The third flow control unit Cf3 has, for example, a tenth valve V10 that opens and closes the flow path of the eleventh piping portion Tb11, and a third flow meter M3 that measures the flow rate of the phosphoric acid aqueous solution.

The operation of each part of the above-mentioned liquid medicine treatment unit 52 can be controlled by the control unit 10. For example, it can be controlled by the control unit 10: by the first liquid supply unit SL1, the pre-use phosphoric acid aqueous solution as the second treatment liquid is supplied to the adjustment tank CB1 (first liquid supply treatment), by the first liquid The circulation part CL1 circulates the phosphoric acid aqueous solution (first liquid circulation treatment), and the second liquid supply part SL2 supplies the phosphoric acid aqueous solution before use to the chemical solution treatment tank CB2 (second liquid supply treatment). 2 The liquid circulation part CL2 circulates the phosphoric acid aqueous solution (second liquid circulation treatment), and the liquid discharge part EL1 discharges the used phosphoric acid aqueous solution as the first treatment liquid from the chemical solution treatment tank CB2 (liquid discharge treatment) , And the process of replenishing the phosphoric acid solution before use as the second treatment liquid toward the liquid discharge part EL1 by the liquid replenishing part AL1 (liquid replenishing treatment).

Furthermore, for example, a concentration meter installed along the inner wall of the second inner tank B2a can also detect the dissolved concentration of a specific substance eluted to the substrate W in the phosphoric acid aqueous solution stored in the second inner tank B2a , And based on the dissolved concentration as the detection result, the control unit 10 opens and closes the eighth valve V8 and the ninth valve V9, and appropriately sends the used phosphoric acid aqueous solution to the treatment liquid output unit Ex0.

In the substrate processing apparatus 100 having the above configuration, for example, the used phosphoric acid aqueous solution as the first processing liquid can be discharged from the chemical liquid processing tank CB2 as the processing unit to the substrate. When the board processing apparatus 100 is outside, the pre-use phosphoric acid aqueous solution as the second processing liquid, which has a relatively low dissolved concentration of substrate components (for example, silicon), is mixed with the used phosphoric acid aqueous solution as the first processing liquid and discharged. With this, for example, even if the used phosphoric acid aqueous solution as the first processing liquid is cooled by the cooling tank Ct1, the phosphoric acid aqueous solution as the processing liquid can be discharged from the chemical liquid processing tank CB2 as the processing unit toward the outside of the substrate processing apparatus 100 In the path, the crystallization of the eluted components from the substrate W in the phosphoric acid aqueous solution as the treatment liquid (for example, the crystallization of silicone) is difficult to occur.

In addition, in the substrate processing apparatus 100, the liquid replenishing part AL1 is used to mix the phosphoric acid aqueous solution before use as the second processing liquid with the used phosphoric acid aqueous solution as the first processing liquid to produce the mixed phosphoric acid aqueous solution as a mixed solution , It can be a dissolved concentration that does not reach the solubility of the substrate component (such as silicon). Such a concentration design can be realized, for example, based on the predicted value or actual measured value of the dissolved concentration of the substrate component of the used phosphoric acid aqueous solution, and the mixing ratio of the first treatment liquid and the second treatment liquid.

<1-3. Operation of substrate processing equipment>

Next, the operation of the substrate processing apparatus 100 having the above-mentioned configuration will be described.

<1-3-1. Operation flow of etching treatment>

4 is a flowchart showing an example of the operation flow of the etching process of the substrate W in the substrate processing apparatus 100. This operation flow is realized, for example, by the control unit 10 controlling the operations of each part of the substrate processing apparatus 100 according to a recipe designated by an operator. Here, the etching for selectively dissolving the silicon nitride film by the phosphoric acid aqueous solution is performed by immersing the substrate W on which the silicon oxide film and the silicon nitride film are formed in an aqueous phosphoric acid solution as a treatment liquid. The processing is described as an example.

When the substrate W is etched in the substrate processing apparatus 100, for example, as shown in FIG. 4, the order of preprocessing (step S1), main processing (step S2), and post processing (step S3) is performed. One cycle of processing executed (also called cycle processing).

<1-3-1-1. Pre-processing actions>

In the pretreatment (step S1), for example, before immersing a plurality of substrates W in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2, the phosphoric acid aqueous solution is made suitable by supplying the phosphoric acid aqueous solution to the chemical solution processing tank CB2. Prepare in the active state of the etching process. In addition, in the pretreatment, for example, a bubble-introducing structure (not shown) may be used to perform a foaming treatment on the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2.

In the pretreatment, for example, the second liquid supply part SL2 supplies the pre-use phosphoric acid aqueous solution to the chemical solution treatment tank CB2. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in accordance with the supply of the phosphoric acid aqueous solution before use from the second liquid supply part SL2. Here, for example, if the supply amount of the phosphoric acid aqueous solution before use by the second liquid supply part SL2 to the chemical solution treatment tank CB2 is equal to the discharge amount of the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1, the phosphoric acid The aqueous solution will not overflow from the liquid chemical treatment tank CB2. Here, for example, by opening the flow paths of the fifth piping part Tb5 and the seventh piping part Tb7 by the fifth valve V5 and the eighth valve V8, the used phosphoric acid aqueous solution can be passed from the chemical solution treatment tank CB2 through the second The 5 piping portion Tb5 and the seventh piping portion Tb7 are discharged toward the cooling tank Ct1, and the used phosphoric acid aqueous solution may be discharged from the chemical solution treatment tank CB2 via the eighth piping portion Tb8 toward the cooling tank Ct1. Also, at this time, for example, liquid The body replenishing part AL1 replenishes the phosphoric acid aqueous solution before use to the liquid discharge part EL1, and in the liquid discharge part EL1, the phosphoric acid aqueous solution before use is mixed with the used phosphoric acid aqueous solution, thereby generating a mixed phosphoric acid aqueous solution. Here, for example, a mixed phosphoric acid aqueous solution is generated in the cooling box Ct1. This mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the processing liquid output part Ex0 via the ninth pipe part Tb9 by opening the flow path of the ninth pipe part Tb9 by the ninth valve V9, for example.

In other words, in the pretreatment, the liquid supply step, the liquid discharge step, and the liquid replenishment step are performed. The liquid supply step includes, for example, a step of supplying the phosphoric acid aqueous solution to the chemical solution treatment tank CB2 via the fourth piping portion Tb4 as the liquid supply portion. The liquid discharge step includes, for example, the step of discharging the used phosphoric acid aqueous solution used in the etching step from the chemical solution processing tank CB2 through the liquid discharge pipe portion Tg1 to the outside of the substrate processing apparatus 100. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 according to the supply of the phosphoric acid aqueous solution before use via the fourth piping part Tb4. The liquid replenishment step includes, for example, the pre-use phosphoric acid aqueous solution whose dissolved concentration of the substrate component is lower than that of the used phosphoric acid aqueous solution, through the eleventh piping portion Tb11 as the liquid replenishing pipe portion, to the liquid discharge portion EL1, thereby replenishing the used phosphoric acid A process of mixing the aqueous solution with the phosphoric acid aqueous solution before use to produce a mixed phosphoric acid aqueous solution as a mixed solution. Thereby, for example, even in the pre-processing, the eluted component from the substrate W in the used phosphoric acid aqueous solution can be crystallized in the path through which the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100 (Such as the crystallization of silicone) is difficult to occur.

In the pre-treatment (step S1) before the main treatment (step S2), for example, in the liquid supply step, the primary phosphoric acid aqueous solution may be supplied to the liquid chemical treatment tank CB2 via the fourth piping portion Tb4, The phosphoric acid aqueous solution may be divided into plural times and supplied. In other words, in the liquid supply step, for example, the second liquid supply part SL2 may supply the phosphoric acid aqueous solution via the fourth piping part Tb4 to the chemical solution processing tank CB2 at least once. In addition, for example, in the liquid discharge step, the used phosphoric acid aqueous solution may be discharged from the chemical solution processing tank CB2 through the liquid discharge pipe part Tg1 to the outside of the substrate processing apparatus 100 once, or the used phosphoric acid aqueous solution may be divided into multiple times and discharged . In other words, in the liquid discharge step, for example, the used phosphoric acid aqueous solution may be discharged from the chemical solution processing tank CB2 through the liquid discharge pipe portion Tg1 to the outside of the substrate processing apparatus 100 at least once by the liquid discharge portion EL1. In addition, for example, in the liquid replenishing step, the phosphoric acid aqueous solution before use may be replenished once to the liquid discharge part EL1 via the 11th piping portion Tb11, or the phosphoric acid aqueous solution before use may be replenished in plural times. In other words, in the liquid replenishing step, for example, the liquid replenishing portion AL1 may replenish the phosphoric acid aqueous solution before use to the liquid discharge portion EL1 at least once through the 11th piping portion Tb11.

Fig. 5 is a sequence diagram of an example of the operation of the preprocessing. 5(a) shows the supply amount (also referred to as the liquid supply amount) of the phosphoric acid aqueous solution (new liquid) from the second liquid supply part SL2 to the liquid chemical treatment tank CB2 during the period P0 during which the pretreatment is performed. A time chart of the opening and closing conditions of the fourth valve V4 of the second liquid supply part SL2 and the discharge amount (also referred to as liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 with time. 5(b) shows the replenishment amount of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 (also referred to as the liquid replenishment amount) during the pretreatment period P0 before use, and the 10th valve of the liquid replenishment part AL1 The timing chart of the time change of the opening and closing status of V10.

Here, for example, when the liquid supply amount is equal to the liquid discharge amount, in the recipe For example, the length of the pretreatment period P0, the amount of liquid supply, and the amount of liquid replenishment will be specified. The liquid replenishment amount may be designated as 1/N (N is an integer of 1-10) of the ratio of the liquid supply amount, for example. For example, when the period P0 is 180 seconds, the liquid supply amount is 2 liters, and N is 2 conditions, the formula can be specified. In this case, the liquid discharge volume is 2 liters, and the liquid replenishment volume is 1 liter (=2 liters/N=2 liters/2).

In the example of FIG. 5, for example, in the period P0 between time t0a and time t0d, during the period P0s between time t0a and time t0c, the phosphoric acid aqueous solution (new liquid) before use is opened by the opening of the fourth valve V4. It is supplied to the chemical solution processing tank CB2 at a flow rate of about Fr0 [ml/min], and the used phosphoric acid aqueous solution is supplied from the chemical solution processing tank CB2 to the liquid discharge part EL1 at a flow rate of about Fr0 [ml/min]. At this time, in the period P0s/N in which the period P0s from time t0a to time t0b is divided by N, the phosphoric acid aqueous solution (new solution) before use is reduced by about Fr0 [ml/min] by opening the 10th valve V10 The flow rate is replenished to the liquid discharge part EL1. Fr0 is set to, for example, 2000 ml/min.

However, in the pretreatment, the liquid supply step and the liquid discharge step may not be performed. In this case, even in the liquid replenishing step, for example, the liquid replenishing portion AL1 may replenish the phosphoric acid solution before use to the liquid discharge portion EL1 at least once via the 11th pipe portion Tb11. In this way, for example, before the etching process of the substrate W in the main process, the aqueous phosphoric acid solution before use can be supplied to the liquid discharge portion EL1 at least once in advance, so that during the etching process in the main process, the solution processing tank CB2 The used phosphoric acid aqueous solution discharged toward the liquid discharge part EL1 and the pre-use phosphoric acid aqueous solution replenished from the liquid replenishing part AL1 toward the liquid discharge part EL1 are easily mixed. In this way, for example, in the path where the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100, The crystallization of the eluted components from the substrate W in the phosphoric acid aqueous solution after use hardly occurs.

<1-3-1-2. Main processing actions>

In the main processing (step S2), the chemical solution processing unit 52 performs etching processing on the plurality of substrates W. Here, for example, the plurality of substrates W held in the elevator LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2. Thereby, the step of etching a plurality of substrates W by the phosphoric acid aqueous solution in the chemical solution processing unit 52 (also referred to as an etching step) is performed. At this time, the above-mentioned first liquid supply process by the first liquid supply part SL1, the first liquid circulation process by the first liquid circulation part CL1, and the above-mentioned first liquid supply process by the second liquid supply part SL2 are appropriately paralleled. The second liquid supply process, the second liquid circulation process by the second liquid circulation part CL2, the liquid discharge process by the liquid discharge part EL1, and the liquid replenishment process by the liquid replenishment part AL1.

Specifically, in the main treatment, similar to the pretreatment, for example, the second liquid supply part SL2 supplies the phosphoric acid aqueous solution before use to the chemical solution treatment tank CB2. At this time, for example, the chemical solution processing tank CB2 discharges the used phosphoric acid aqueous solution to the liquid discharge part EL1 in accordance with the supply of the phosphoric acid aqueous solution before use from the second liquid supply part SL2. In addition, at this time, for example, the liquid replenishing part AL1 replenishes the phosphoric acid aqueous solution before use to the liquid discharge part EL1, and in the liquid discharge part EL1, the phosphoric acid aqueous solution before use is mixed with the used phosphoric acid aqueous solution, thereby generating a mixed phosphoric acid aqueous solution. This mixed phosphoric acid aqueous solution is conveyed from the liquid discharge part EL1 toward the processing liquid output part Ex0. Therefore, in the main process, the liquid supply step, the liquid discharge step, and the liquid replenishment step are performed in the same manner as the preprocessing. Then, for example, when the etching process is performed by the chemical liquid treatment tank CB2 in the etching step, the first liquid supply part SL1 passes the phosphoric acid solution before use through the fourth piping part Tb4 in the liquid supply step. It is supplied to the chemical solution processing tank CB2, and in the liquid replenishing step, the pre-use phosphoric acid aqueous solution is replenished to the liquid discharge portion EL1 via the 11th pipe portion Tb11 by the liquid replenishing portion AL1.

In this way, even in the main process, for example, when the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 to the outside of the substrate processing apparatus 100, it is only necessary to mix the pre-use phosphoric acid aqueous solution with a relatively low silicon dissolution concentration in the use After the phosphoric acid aqueous solution is completed and discharged, the used phosphoric acid aqueous solution is discharged from the chemical solution treatment tank CB2 toward the outside of the substrate processing apparatus 100, so that the crystallized silicon as the eluted component from the substrate W in the used phosphoric acid aqueous solution The crystallization of oxane hardly occurs.

Here, for example, in the liquid replenishing step, as long as the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution does not reach the solubility by mixing the used phosphoric acid aqueous solution with the used phosphoric acid aqueous solution, the used phosphoric acid aqueous solution is transferred from the chemical solution treatment tank In the path where CB2 is discharged to the outside of the substrate processing apparatus 100, the crystallization of siloxane, which is the eluted component from the substrate W in the used phosphoric acid aqueous solution, is difficult to occur.

Furthermore, in this embodiment, for example, in the liquid supply step, if a configuration is adopted that the phosphoric acid solution before use is supplied to the chemical solution treatment tank CB2 via the fourth piping portion Tb4 as the liquid supply pipe portion, it can be used The pre-use phosphoric acid aqueous solution supplied to the chemical solution treatment tank CB2 is also used for the purpose of mixing the phosphoric acid aqueous solution in the liquid discharge part EL1 until the used phosphoric acid aqueous solution. Thereby, for example, the first liquid supply part SL1 and the second liquid supply part SL2 for supplying the phosphoric acid aqueous solution to the chemical solution treatment tank CB2 before use can be used for mixing in the liquid discharge part EL1 until the used phosphoric acid aqueous solution Before use, the liquid replenishment parts AL1 of the phosphoric acid aqueous solution should share at least a part of the components. For example, can seek treatment liquid The supply source En0 and its surrounding piping are shared. As a result, for example, the structure of the substrate processing apparatus 100 can be simplified.

In addition, in this embodiment, the liquid discharge step includes a first liquid discharge step, a liquid cooling step, and a second liquid discharge step. The first liquid discharge step includes, for example, a step of discharging the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to at least one of the seventh piping portion Tb7 and the eighth piping portion Tb8 as the first portion included in the liquid discharge pipe portion Tg1 . The liquid cooling step includes, for example, a step of cooling the used phosphoric acid aqueous solution or the mixed phosphoric acid aqueous solution in the cooling tank Ct1 included in the liquid discharge portion EL1 and connected to the seventh pipe portion Tb7. The second liquid discharge step includes, for example, discharging the mixed phosphoric acid aqueous solution from the cooling tank Ct1 to the outside of the substrate processing apparatus 100 through the ninth piping part Tb9 that is included in the liquid discharge pipe part Tg1 and is connected to the second part of the cooling tank Ct1. step. If such a structure is adopted, for example, even if the used phosphoric acid aqueous solution is cooled by the cooling tank Ct1, the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100 as the used phosphoric acid aqueous solution The crystallization of the siloxane, which is the crystallization of the eluted component of the substrate W, still hardly occurs.

Then, in the main process (step S2), for example, if the plurality of substrates W held in the elevator LF2 are immersed in the phosphoric acid aqueous solution stored in the chemical treatment tank CB2 for a predetermined time, the plurality of substrates W held in the elevator LF2 The substrate W is lifted from the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2 by the lifting of the elevator LF2. In the main process (step S2), for example, an etching process may be sequentially performed on a plurality of groups of substrates W each composed of a plurality of substrates W. In this case, by lifting and lowering of the elevator LF2, etc., the substrates W in the plural groups formed by the plural substrates W are repeatedly executed. A plurality of substrates W are sequentially immersed in the phosphoric acid aqueous solution stored in the chemical solution processing tank CB2, and the plurality of substrates W are drawn up from the phosphoric acid aqueous solution. Furthermore, the plurality of substrates W pulled up from the phosphoric acid aqueous solution stored in the chemical liquid processing tank CB2 are cleaned with pure water, for example, in the cleaning processing section 51 adjacent to the chemical liquid processing section 52 .

However, when the main treatment is performed, for example, there are cases where the phosphoric acid aqueous solution of about 5-10% of the capacity of the chemical solution treatment tank CB2 is replaced. In this case, in the main processing, for example, when the substrate W is etched by the chemical liquid processing bath CB2 in the etching step, the processing performed by the second liquid supply portion SL2 in the liquid supply step Two or more supplies of the phosphoric acid aqueous solution before use through the fourth piping part Tb4 to the chemical solution treatment tank CB2, and the orientation of the phosphoric acid aqueous solution before use through the eleventh piping part Tb11 by the liquid replenishment part AL1 in the liquid replenishment step Two or more replenishments of the liquid discharge part EL1 are performed simultaneously. Here, in the main process, during the etching process, the pre-use phosphoric acid aqueous solution is supplied from the second liquid supply part SL2 toward the chemical solution processing tank CB2, and the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the liquid. The discharge of the part EL1 and the supply of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 before use are divided into M times specified by the division number M, and these are executed in synchronization with each other.

If such an operation is adopted, for example, in the main treatment, the state of the phosphoric acid aqueous solution stored in the chemical solution treatment tank CB2 with respect to the passage of time is likely to become substantially uniform. Furthermore, for example, the dissolved concentration of the substrate component in the mixed phosphoric acid aqueous solution generated in the liquid discharge portion EL1 can be easily uniformized. As a result, for example, in the route through which the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100, the crystallization of the eluted components from the substrate W in the used phosphoric acid aqueous solution (silicone crystallization) Hard to happen.

Fig. 6 is a sequence diagram of an example of the operation of the main processing. Fig. 6(a) shows the supply amount (liquid supply amount) of the phosphoric acid aqueous solution (new liquid) from the second liquid supply part SL2 to the liquid chemical treatment tank CB2 and the second liquid during the period P1 during which the main processing is performed The timing chart of the opening and closing conditions of the fourth valve V4 of the supply part SL2 and the discharge amount (liquid discharge amount) of the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 with time. 6(b) shows the replenishment amount (liquid replenishment amount) of the phosphoric acid aqueous solution from the liquid replenishing part AL1 to the liquid discharge part EL1 before use in the main treatment period P1, and the opening and closing of the 10th valve V10 of the liquid replenishing part AL1 Time chart of changes in conditions, etc. over time.

Here, for example, when the liquid supply amount and the liquid discharge amount are equal, the length of the main processing period P1, the liquid supply amount, the liquid replenishment amount, and the number of divisions M are specified in the recipe. The liquid replenishment amount may be specified by, for example, 1/N (N is an integer from 1 to 10) of the ratio to the liquid supply amount. For example, there may be cases where conditions such as a period P1 of 7200 seconds, a liquid supply amount of 50 liters, N of 10, and M of 10 are prescribed by a recipe. In this case, the liquid supply volume per time is 5 liters (=50 liters/M=50 liters/10), the liquid discharge volume is 50 liters, and the liquid discharge volume per time is 5 liters (=50 liters/10= 50 liters/M), the liquid replenishment volume is 5 liters (=50 liters/10=50 liters/N), and each time the liquid refill volume is 0.5 liters (=5 liters/10=5 liters/M).

In the example of FIG. 6, for example, in each period (for example, 720 seconds) that divides the period P1 from time t1a to time t1b into ten, the phosphoric acid aqueous solution (new liquid) before use is opened by the fourth valve V4. It is supplied to the chemical solution treatment tank CB2 at a flow rate of about Fr1 [ml/min], and the used phosphoric acid solution is supplied from the chemical solution treatment tank CB2 at a flow rate of about Fr1 [ml/min] Give to the liquid discharge part EL1. At this time, in each period (for example, 720 seconds) that divides the period P1 from time t1a to time t1b into ten, the phosphoric acid aqueous solution (new liquid) before use is opened by the opening of the 10th valve V10, and the value is approximately Fr1[ml /min] is replenished to the liquid discharge part EL1. Fr1 is set to, for example, 800 ml/min.

Fig. 7 is a flowchart showing an example of the operation flow of the main process. This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100. In step S21 in FIG. 7, the control unit 10 recognizes the recipe designated by the operator for the plurality of substrates W to be processed. In step S22, it is determined by the control unit 10 that the pre-use phosphoric acid aqueous solution is transferred from the second liquid supply portion SL2 toward the chemical solution processing tank CB2 when performing the etching processing in the main processing in the recipe identified in step S21 The supply, the discharge of the used phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1, and the replenishment of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 before use are divided into M times and performed (also (Referred to as the split function) is enabled. Here, if the dividing function is valid, in step S23, when the etching process in the main process is executed, the phosphoric acid solution before use is supplied from the second liquid supply part SL2 toward the chemical solution treatment tank CB2, and the used phosphoric acid is supplied. The discharge of the aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 and the replenishment of the phosphoric acid aqueous solution from the liquid replenishment part AL1 to the liquid discharge part EL1 before use are divided and performed. On the other hand, if the division function is not effective, in step S24, when the etching process in the main process is performed, the phosphoric acid aqueous solution is not separately supplied and used from the second liquid supply part SL2 to the chemical solution treatment tank CB2 before use. The discharge of the phosphoric acid aqueous solution from the chemical solution treatment tank CB2 to the liquid discharge part EL1 is completed, and the before-use phosphoric acid aqueous solution is divided and performed from the liquid replenishing part AL1 to the liquid discharge part EL1.

<1-3-1-3. Post-processing actions>

In the post-processing (step S3), for example, after the main processing (step S2) is completed, preparations for execution of the next cycle processing are performed by supplying a phosphoric acid aqueous solution to the chemical solution processing tank CB2.

<1-3-2. Action during the interval of etching treatment>

In the substrate processing apparatus 100, there is a case in which a processing plan or a maintenance plan for the substrate W is required, and after the etching processing of the substrate W is performed, it is necessary to wait a long time before performing the subsequent etching processing of the substrate W. In this case, there is a period in which the etching process of the substrate W in the chemical solution processing unit 52 is not executed (both referred to as a non-execution period or an interval period). During this interval, if the used phosphoric acid aqueous solution remains in the liquid discharge part EL1 of the substrate processing apparatus 100 for a long period of time, the crystallization of the eluted components from the substrate W (silicone The possibility of crystallization).

<1-3-2-1. Liquid replenishment during the interval>

In the substrate processing apparatus 100 of the present embodiment, for example, the control unit 10 may perform the etching process on the substrate W by the chemical solution processing tank CB2 during the etching step, and then use the chemical agent to perform the next etching step. During the interval between the etching process of the substrate W in the liquid treatment tank CB2, the pre-use phosphoric acid aqueous solution performed by the liquid replenishing part AL1 in the liquid replenishing step is executed at a predetermined time point and is discharged into the liquid through the 11th piping part Tb11 The supplement of EL1. Hereinafter, the pre-use phosphoric acid aqueous solution performed by the liquid replenishing part AL1 in the liquid replenishing step during the interval will pass through the 11th piping part The process of replenishing Tb11 toward the liquid discharge part EL1 is called "interval liquid replenishing process". In addition, the predetermined time point may be, for example, a time point every time the first predetermined time P2 is counted by a timer 10d, which is one of the functions of the control unit 10. As the time point at which the counting by the timer 10d is started, for example, the substrate processing apparatus 100 may be the time point when the etching process of the chemical solution processing section 52 ends and the etching process is not performed in the chemical solution processing section 52. The time when the medical solution processing unit 52 is set to the standby state, and the time when the liquid replenishment process ends during the interval. The first predetermined time P2 can be set to any time between about 1 to 48 hours, for example, based on an input by an operator via the input unit 8. Also, as the amount of replenishment of the phosphoric acid aqueous solution to the liquid discharge portion EL1 before use by the liquid replenishment part AL1 at a predetermined time point, for example, the capacity of the cooling tank Ct1 (for example, about 5-50 liters) can be multiplied by 1/ n (n is an integer ranging from 1 to 10).

Fig. 8 is a diagram for explaining the action of the liquid replenishing process during the interval. Fig. 8(a) shows an example of a timing chart of the liquid replenishing process during the interval, and Fig. 8(b) shows a flowchart of an example of the operation flow of the liquid replenishing process during the interval. This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100.

As shown in Fig. 8(a), for example, the liquid replenishment process during the interval may be executed every time the first predetermined time P2 elapses during the interval.

Here, for example, by performing the processing of steps S41 to S47 in FIG. 8(b), the liquid replenishment process during the interval can be performed.

In step S41, the control unit 10 determines whether or not the chemical solution processing unit 52 is in a standby state. Here, the determination of step S41 is repeated until the chemical solution processing unit 52 becomes the standby state, and when the chemical solution processing unit 52 becomes the standby state, the process proceeds to step S42.

In step S42, the control unit 10 starts the process of counting the passage of the first predetermined time P2 (also referred to as the first counting process).

In step S43, the control unit 10 determines whether the loop processing including the pre-processing, main processing, and post-processing performed by the chemical solution processing unit 52 has started. Here, if the loop processing has started, return to step S41. On the other hand, if the loop processing has not yet started, it proceeds to step S44.

In step S44, the control unit 10 determines whether the first predetermined time P2 has passed since the start of the first counting process. Here, if the first predetermined time P2 has not elapsed since the start of the first counting process, the process returns to step S43. On the other hand, if the first predetermined time P2 has passed since the start of the first counting process, the process proceeds to step S45.

In step S45, the control unit 10 starts the interval liquid replenishment process performed by the liquid replenishment unit AL1. At this time, for example, the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, and the mixed phosphoric acid aqueous solution can be sent from the cooling tank Ct1 to the processing liquid output portion Ex0 by this.

In step S46, the control unit 10 determines whether the replenishment amount of the phosphoric acid aqueous solution from the liquid replenishing part AL1 to the liquid discharge part EL1 in the liquid replenishing process during the interval has reached Both quantitative. Here, the control unit 10 repeats the determination in step S46 until the replenishment amount reaches the predetermined amount. If the replenishment amount reaches the predetermined amount, the interval liquid replenishment process is ended in step S47 and returns to step S42.

If such a configuration is adopted, for example, even when there is a gap, in the path through which the used phosphoric acid aqueous solution is discharged from the chemical solution processing tank CB2 toward the outside of the substrate processing apparatus 100, the used phosphoric acid aqueous solution is eluted from the substrate W The crystallization of the components (the crystallization of siloxanes) is also difficult to occur.

<1-3-3. Actions corresponding to the storage volume in the cooling box>

As described above, for example, when the chemical solution processing unit 52 performs a circulation process including an etching process, the used phosphoric acid aqueous solution is transported from the chemical solution processing tank CB2 to the cooling tank Ct1 of the liquid discharge portion EL1. Therefore, for example, it may be a state in which a certain amount of accommodating capacity is ensured in advance in the cooling tank Ct1 in such a way that the circulation processing can be performed even during an interval or the like. Therefore, in the substrate processing apparatus 100, for example, it is also possible to monitor the storage amount of the phosphoric acid aqueous solution in the cooling tank Ct1, and perform actions based on the storage amount.

FIG. 9 is a diagram for explaining the amount of storage in the cooling tank Ct1 that becomes the monitoring target. Here, for example, it can be preset that the storage capacity of the cooling box Ct1 can be preset, and the detection unit M4 can monitor the storage capacity of 4 levels (the 1st to 4th storage capacity Lv1~Lv4). In this case, in the substrate processing apparatus 100, for example, a process of detecting the amount of liquid stored in the cooling tank Ct1 (also referred to as a detection step) is performed. Here, for example, it can be preset that the first storage volume Lv1 is the upper limit level, the second storage volume Lv2 is the quantitative level, the third storage volume Lv3 is the first threshold limit and the unavailable level, and the fourth storage Lv4 series as the second pro Circumstances where the limit cannot be supplemented. The third storage amount Lv3 and the fourth storage amount Lv4 may be different or the same, for example.

<1-3-3-1. Monitoring of liquid replenishment during the interval>

For example, if the control unit 10 detects that the storage amount of the liquid stored in the cooling tank Ct1 has reached the fourth storage amount Lv4 as the second threshold value in the detection step, it is detected by the detection portion M4. The execution of liquid replenishment during the interval is prohibited. For such processing, the control unit 10 may perform each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 respectively. If such a configuration is adopted, for example, if the liquid of the fourth storage amount Lv4 or more, which is the second threshold, is stored in the cooling tank Ct1, during the interval during which the etching process by the chemical liquid processing tank CB2 is not performed, The replenishment of the phosphoric acid aqueous solution to the liquid discharge portion EL1 at a predetermined time point before use is not performed.

FIG. 10 is a diagram for explaining the action of the liquid replenishment process during the interval based on the monitoring result of the storage amount of the cooling tank Ct1. Fig. 10(a) shows an example of a timing chart of the liquid replenishment process during the interval based on the monitoring result of the storage capacity of the cooling tank Ct1, and Fig. 10(b) shows the monitoring result of the storage capacity of the cooling tank Ct1. A flowchart of an example of the operation flow of the liquid replenishment process during the interval. This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100.

As shown in FIG. 10(a), for example, it may be the following state: the interval liquid replenishment process is usually executed every time the first predetermined time P2 elapses during the interval, but at time t3b, it is stored in cooling The liquid storage volume of the tank Ct1 has reached the fourth storage volume Lv4, which is the second threshold. Therefore, the liquid replenishment process during the interval is not performed, but the process starts from the beginning The first counting process for measuring the passage of the first predetermined time P2.

The operation flow of FIG. 10(b) inserts the processor of step S44b between the processing of step S44 and the processing of step S45 in the operation flow of FIG. 8(b) described above. In step S44b of FIG. 10(b), the control unit 10 uses the detection unit M4 to determine whether the storage amount of the liquid stored in the cooling tank Ct1 has reached the fourth storage amount Lv4, which is the second threshold. Here, if the storage amount of the liquid has reached the fourth storage amount Lv4, the process returns to step S42. On the other hand, if the storage amount of the liquid has not reached the fourth storage amount Lv4, the process proceeds to step S45.

With such a structure, for example, when the substrate W is etched after the interval is released, it is possible to suppress the inability to discharge the used phosphoric acid aqueous solution from the chemical solution processing tank CB2 to the liquid discharge portion EL1 and the occurrence of defects in the etching process What happened.

However, for example, the following situation can be preset: during the interval, the storage amount detected by the detection unit M4 reaches the fourth storage amount Lv4 because the liquid discharge portion EL1 including the detection portion M4 and the cooling tank Ct1 is A certain kind of undesirable situation occurs, and it lasts for too long, so that the liquid replenishment treatment during the interval cannot be performed. Therefore, for example, during the interval, the control unit 10 may respond to the case that the time during which the liquid replenishment process is not executed during the interval has reached the second predetermined time P3, and send the first alarm through the output unit 9. The second predetermined time P3 is set to, for example, about a predetermined plural multiple (for example, 2 to 5 times) of the first predetermined time P2. For the first alarm, for example, a predetermined warning screen display and warning sound output can be applied. For such processing, the control unit 10 may perform each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 respectively.

FIG. 11 is a diagram for explaining the operation of monitoring during the interval during which the liquid replenishment process is not executed (also referred to as the non-execution period). Fig. 11(a) shows an example of a timing chart of the monitoring action during the non-execution period of the liquid replenishment process during the interval, and Fig. 11(b) shows an example of the operation flow of the monitoring action during the non-execution period of the liquid replenishment process during the interval flow chart. This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100.

As shown in FIG. 11(a), for example, it is possible to respond to a situation in which the non-execution period of the liquid replenishment process during the interval has reached the second predetermined time P3, and the output unit 9 sends the first alarm.

Here, for example, by performing the processing of steps S51 to S57 in FIG. 11(b), the monitoring operation during the non-execution period of the interval liquid replenishment processing can be performed in the interval period.

In step S51, the control unit 10 determines whether the chemical solution processing unit 52 is in a standby state. Here, the control unit 10 repeats the determination in step S51 until the chemical solution processing unit 52 becomes the standby state, and when the chemical solution processing unit 52 becomes the standby state, it proceeds to step S52.

In step S52, the control unit 10 starts the process of counting the elapse of the second predetermined time P3 (also referred to as the second counting process).

In step S53, the control unit 10 determines whether or not a process including the replenishment of the phosphoric acid aqueous solution before use to the liquid discharge part EL1 performed by the liquid replenishment part AL1 (also referred to as liquid replenishment processing) has been executed. In the liquid replenishment processing, for example, the package contains Including pre-treatment, main treatment and post-treatment cycle treatment, and liquid replenishment treatment during the interval. Here, if the liquid replenishment processing has been executed, the process proceeds to step S57, and if the liquid replenishment processing is completed, the process returns to step S51. On the other hand, if the liquid replenishment processing has not been executed, the process proceeds to step S54.

In step S54, the control unit 10 determines whether or not the second predetermined time P3 has passed since the start of the second counting process. Here, if the second predetermined time P3 has not elapsed since the start of the second counting process, the process returns to step S53. On the other hand, if the second predetermined time P3 has passed since the start of the second counting process, the process proceeds to step S55.

In step S55, the control unit 10 transmits the first alarm via the output unit 9.

In step S56, the control unit 10 is set to a state in which the execution of the liquid replenishment process and the circulation process is prohibited during the interval (also referred to as the process prohibition state). At this time, for example, it may be a situation in which the control unit 10 does not put the plurality of substrates W into the liquid chemical processing tank CB2 of the liquid chemical processing unit 52, but leaves them in the plurality of substrates W of the cleaning processing unit 51, etc. Areas that are difficult to change.

If such a configuration is adopted, for example, a certain kind of failure that occurs in the liquid discharge portion EL1 including the detection portion M4 and the cooling tank Ct1 can be handled. Moreover, for example, when a certain defect occurs in the liquid discharge part EL1 including the detection part M4 and the cooling box Ct1, the execution of the circulation process is prohibited, so that the occurrence of the defect in the etching process of the substrate W can be avoided.

Also, for example, the following situation can be preset: during the interval period of liquid replenishment, the interval The inter-period liquid replenishment process is executed due to a certain failure caused by the liquid replenishment part AL1 including the third flow meter M3 and the liquid discharge part EL1 including the cooling tank Ct1, and continues for an excessively long time. Therefore, for example, during the interval, the control unit 10 may respond to the situation when the time (also referred to as the execution time) during which the liquid replenishment process is executed during the interval reaches the third predetermined time P4, and send the first time through the output unit 9. 2 alarms. The third predetermined time P4 is, for example, set to be about 110 to 150% of the normally preset time (also referred to as the required time) required for the liquid replenishment process during the interval. For the second alarm, for example, the display of a predetermined warning screen and the output of a warning sound can be applied. For such processing, the control unit 10 may perform each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 respectively.

FIG. 12 is a diagram for explaining the operation of monitoring the execution time of the liquid replenishing process during the interval. Fig. 12(a) shows an example of a timing chart of the monitoring action of the execution time of the liquid replenishing process during the interval, and Fig. 12(b) shows a flow chart of an example of the operation flow of the monitoring action regarding the execution time of the liquid replenishing process during the interval . This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100.

As shown in FIG. 12(a), for example, it is possible to respond to a situation in which the execution time of the liquid replenishing process reaches the third predetermined time P4 during the interval, and the output unit 9 sends a second alarm.

Here, for example, by performing the processing of steps S61 to S66 in FIG. 12(b), the monitoring action of the execution time of the liquid replenishment processing during the interval can be executed.

In step S61, the control unit 10 determines whether the liquid replenishment process has been The body supplement department AL1 started. Here, the determination of step S61 is repeated until the liquid replenishment process starts during the interval, and if the liquid replenishment process starts during the interval, the process proceeds to step S62.

In step S62, the control unit 10 starts the process of counting the elapse of the third predetermined time P4 (also referred to as the third counting process).

In step S63, the control unit 10 determines whether the liquid replenishment process has ended during the interval. Here, if the liquid replenishment process has not ended during the interval, the process proceeds to step S64. On the other hand, if the liquid replenishment process has ended during the interval, the process returns to step S61.

In step S64, the control unit 10 determines whether or not a third predetermined time P4 has passed since the start of the third counting process. Here, if the third predetermined time P4 has not elapsed since the start of the third counting process, the process returns to step S63. On the other hand, if the third predetermined time P4 has passed since the start of the third counting process, the process proceeds to step S65.

In step S65, the control unit 10 uses the output unit 9 to perform the transmission of the second alarm.

In step S66, the control unit 10 sets a state in which the execution of the liquid replenishment process and the circulation process is prohibited during the interval (process prohibition state). At this time, for example, the control unit 10 may not put a plurality of substrates W into the chemical liquid processing tank CB2 of the chemical liquid processing unit 52, but leave them in an area where the plurality of substrates W, such as the cleaning processing unit 51, is unlikely to change. .

If such a structure is adopted, it can deal with the liquid replenishment part AL1 and the cooling A certain problem caused by the liquid discharge part EL1 of the tank Ct1. In addition, for example, when a certain failure occurs due to the liquid replenishment part AL1 and the liquid discharge part EL1 including the cooling tank Ct1, the execution of the circulation process is prohibited, so that the occurrence of the failure during the etching process of the substrate W can be avoided.

<1-3-3-2. Monitoring of cyclic processing>

For example, if the control unit 10 detects that the storage amount of the liquid stored in the cooling tank Ct1 has reached the third storage amount Lv3 as the first threshold value in the detection step, it is detected by the detection unit M4. The execution of the etching process on the substrate W by the chemical liquid processing tank CB2 is prohibited. For such processing, the control unit 10 may perform each processing unit of the first liquid processing unit 5 and the second liquid processing unit 6 respectively. With such a configuration, for example, when etching the substrate W, the used phosphoric acid aqueous solution cannot be discharged from the chemical solution processing tank CB2 to the liquid discharge portion EL1 and the occurrence of defects during the etching process can be suppressed.

Fig. 13 is a diagram for explaining the prohibition of the circulation processing based on the monitoring result of the storage amount of the cooling tank Ct1. Figure 13(a) shows an example of a timing chart of prohibition of cyclic processing based on the monitoring result of the storage capacity of the cooling tank Ct1, and Figure 13(b) shows the prohibition of recycling processing based on the monitoring result of the storage capacity of the cooling box Ct1 The flow chart of an example of the action flow. This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100.

As shown in Figure 13(a), it can be as follows: At time t6d, when the circulation process is started, if the storage amount of the liquid stored in the cooling tank Ct1 has reached the first temporary The output unit 9 sends a third alarm to the limit of the third storage amount Lv3, and is set to a state where the execution of the loop processing is prohibited (processing prohibition state). Then, by the processing performed by the operator or the like, after the transmission of the third alarm by the output unit 9 and the processing prohibition state are released, the execution of the loop processing is started.

Here, for example, by performing the processing of steps S71 to S75 of FIG. 13(b), an action of prohibiting the circulation processing based on the monitoring result of the storage amount of the cooling tank Ct1 can be performed.

In step S71, the control unit 10 determines whether it is the time to start the loop processing based on the schedule created by the scheduling unit. Here, the control unit 10 repeats the determination in step S71 until the time when the loop processing is started, and if it is the time when the loop processing starts, it proceeds to step S72.

In step S72, the control unit 10 uses the detection unit M4 to determine whether the storage amount of the liquid stored in the cooling tank Ct1 has reached the third storage amount Lv3, which is the first threshold. Here, if the storage amount of the liquid has not reached the third storage amount Lv3, the loop processing is executed in step S75, and the process returns to step S71. On the other hand, if the storage amount of the liquid has reached the third storage amount Lv3, the process proceeds to step S73.

In step S73, the control unit 10 uses the output unit 9 to perform transmission of the third alarm.

In step S74, the control unit 10 sets the processing execution prohibition state in which the execution of the loop processing is prohibited. At this time, for example, the following aspect may be adopted: the control unit 10 does not put a plurality of substrates W into the chemical solution processing tank CB2 of the chemical solution processing portion 52, but leaves them in the cleaning processing portion Areas where changes are difficult to occur in the plurality of substrates W such as 51.

If such a structure is adopted, it is possible to deal with a certain problem caused by, for example, the liquid discharge portion EL1 including the cooling tank Ct1. In addition, for example, when a certain failure occurs due to the liquid discharge portion EL1 including the detection portion M4 and the cooling box Ct1, the execution of the circulation process is prohibited, so that the occurrence of the failure during the etching process of the substrate W can be avoided.

<2. Summary of the first embodiment>

As described above, according to the substrate processing apparatus 100 of the first embodiment, for example, when the used phosphoric acid aqueous solution as the first processing liquid is discharged from the chemical liquid processing tank CB2 as the processing section to the outside of the substrate processing apparatus 100, the substrate The pre-use phosphoric acid aqueous solution as the second treatment liquid with a relatively low dissolved concentration of the component (for example, silicon) is mixed with the used phosphoric acid aqueous solution. With this, for example, in the path through which the phosphoric acid aqueous solution as the processing liquid is discharged from the chemical solution processing tank CB2 as the processing unit toward the outside of the substrate processing apparatus 100, the eluted components from the substrate W in the phosphoric acid aqueous solution as the processing liquid are crystallized ( For example, the crystallization of siloxanes) will be difficult to occur.

<3. Modifications>

The present invention is not limited to the above-mentioned first embodiment, and various changes, improvements, etc. can be made without departing from the spirit of the present invention.

For example, in the first embodiment described above, the execution time point of the circulation process and the liquid replenishment part AL1 can also perform the treatment (liquid replenishment treatment) that replenishes the phosphoric acid aqueous solution before use as the second treatment liquid to the liquid discharge part EL1. Various changes were made at the execution time point.

Fig. 14 is a timing chart showing changes in the execution time of the circulation process and the liquid replenishment process. Fig. 14(a) is a timing chart concerning the execution of the loop process and the execution of the liquid replenishing process in the first embodiment. Liquid replenishment treatment includes liquid replenishment treatment during interval and circulation treatment. 14(b) and FIG. 14(c) are timing charts concerning the execution of the loop process and the execution of the liquid replenishing process of the first modification.

In the example of FIG. 14(a), the control unit 10 does not perform the interval liquid replenishment process while the circulation process is being performed, and during the interval period when the chemical solution treatment part 52 does not perform the circulation process, every time the first The interval liquid replenishment process is performed at the predetermined time P2.

In the example of FIG. 14(b) and FIG. 14(c), the control unit 10 does not perform the liquid replenishment process when the loop process is executed, and regardless of whether the loop process is executed or not, it is executed every time the first predetermined time P2 passes Liquid replenishment during the interval. However, in this case, as shown in FIG. 14(c), if the loop process is being executed, the interval liquid replenishment process will not be performed even if the first predetermined time P2 has passed, and during the response loop process End, and then perform the interval liquid replenishment process.

FIG. 15 is a flowchart showing an example of the operation flow of the first modification at the execution time of the circulation process and the liquid replenishing process. This operation flow is realized by, for example, the control unit 10 controlling the operation of each part of the substrate processing apparatus 100.

Here, the liquid replenishing process of the first modification example is executed by performing the processes of steps S81 to S86 in FIG. 15, for example.

In step S81, the control unit 10 starts to perform the first counting process that performs the counting for measuring the elapse of the first predetermined time P2.

In step S82, the control unit 10 determines whether the first predetermined time P2 has passed since the start of the first counting process. Here, the control unit 10 repeats the determination in step S82 until the first predetermined time P2 has elapsed since the start of the first counting process, and if the first predetermined time P2 has elapsed, it proceeds to step S83.

In step S83, the control unit 10 determines whether or not the circulation process in the chemical solution treatment tank CB2 is being executed. Here, if the loop process is being executed, the control unit 10 repeats the determination of step S83, and if the loop process is not being executed, it proceeds to step S84.

In step S84, the control unit 10 starts the liquid replenishing process during the interval performed by the liquid replenishing unit AL1. At this time, for example, the flow path of the ninth piping portion Tb9 is appropriately opened by the ninth valve V9, whereby the mixed phosphoric acid aqueous solution is sent from the cooling tank Ct1 to the processing liquid output portion Ex0.

In step S85, the control unit 10 determines whether or not the replenishment amount of the phosphoric acid aqueous solution before the treatment in the interval liquid replenishment process from the liquid replenishment part AL1 to the liquid discharge part EL1 has reached a predetermined amount. Here, the control unit 10 repeats the processing of step S85 until the replenishment amount reaches the predetermined amount. If the replenishment amount reaches the predetermined amount, the interval liquid replenishment process is ended in step S86, and the process returns to step S81.

In addition, for example, in the first embodiment and the first modification described above, for example, as shown in FIG. 16, the liquid discharge portion EL1 in the chemical solution treatment portion 52 may be replaced by the liquid discharge portion EL1. The liquid discharge part EL1A of the cooling tank Ct1. In this case, for example, in the liquid discharge pipe part Tg1, the pre-use phosphoric acid aqueous solution replenished from the liquid replenishing part AL1 as the second treatment liquid is mixed with the first treatment liquid discharged from the chemical liquid treatment tank CB2. The phosphoric acid aqueous solution is completed, thereby generating a mixed solution (mixed phosphoric acid aqueous solution). In the example of FIG. 16, it connects so that the 7th piping part Tb7, the 8th piping part Tb8, and the 9th piping part Tb9 may be directly connected.

In addition, for example, the present invention is not limited to a batch-type substrate processing apparatus like the substrate processing apparatus 100 of the first embodiment described above, and can also be applied to each substrate W by discharging the processing liquid from the nozzle to the substrate W. The substrate W is a so-called single-chip substrate processing apparatus that performs etching processing using a processing liquid. FIG. 17 is a diagram showing an example of the configuration of the chemical solution processing unit 52B in the single-piece substrate processing apparatus. As shown in FIG. 17, the liquid medicine processing part 52B is equipped with the liquid supply part SL2B, the liquid medicine processing unit CP2, the liquid discharge part EL1B, and the liquid supplement part AL1B.

The liquid supply part SL2B can perform, for example, a process (liquid supply process) of supplying a pre-use phosphoric acid aqueous solution functioning as an etching liquid as a processing liquid to the chemical solution processing unit CP2 as the processing part. The liquid supply part SL2B has, for example, a fourth pipe part Tb4 as a liquid supply pipe part, and can supply the phosphoric acid aqueous solution sent from the treatment liquid supply source En0 to the chemical solution treatment unit CP2 via the fourth pipe part Tb4. A second flow control unit Cf2 is provided in the fourth piping portion Tb4. The second flow control unit Cf2 has, for example, a fourth valve V4 that opens and closes the flow path of the phosphoric acid aqueous solution, and a second flow meter that measures the flow rate of the phosphoric acid aqueous solution. M2. In the liquid supply section SL2B, for example, the phosphoric acid aqueous solution supplied from the processing liquid supply source En0 passes through the fourth piping section Tb4 and is supplied to the nozzle 50 of the chemical liquid processing unit CP2 at the flow rate set by the second flow control section Cf2 .

The chemical solution processing unit CP2 is, for example, a portion (processing section) that performs etching processing on the substrate W with a phosphoric acid aqueous solution as a processing solution that functions as an etching solution. The chemical solution processing unit CP2 has, for example, a holding portion 30, a rotating mechanism 40, and a nozzle 50. The holding part 30 holds and rotates the substrate W in a substantially horizontal posture, for example. For example, the holding portion 30 may be a vacuum chuck having another main surface (also referred to as a lower surface) Bs1 opposite to the upper surface Us1 of the substrate W, or a vacuum chuck capable of holding the substrate W. Clamping chuck with multiple chuck pins on the periphery The rotating mechanism 40 rotates the holding portion 30. The rotating mechanism 40 can be configured to have, for example, a rotating shaft 40s that is connected to the upper end of the holding portion 30 and extends in the vertical direction, and has a virtual rotating shaft Ax1 that allows the rotating shaft 40s to follow the vertical direction. 40m of rotation drive unit such as a center-rotating motor. Here, for example, the rotation support shaft 40s is rotated around the rotation axis Ax1 by the rotation drive portion 40m, thereby rotating the holding portion 30 in a substantially horizontal plane. Thereby, for example, the substrate W held on the holding portion 30 is rotated about the rotation axis Ax1. The nozzle 50 can eject, for example, an aqueous phosphoric acid solution as a processing liquid toward the substrate W held by the holding portion 30.

The liquid discharge portion EL1B is, for example, a portion that performs the following processing (liquid discharge processing): the chemical solution processing unit CP2 as the processing portion is used as a processing liquid (first processing liquid) after etching processing on the substrate W The phosphoric acid aqueous solution (the used phosphoric acid aqueous solution) is discharged from the chemical solution processing unit CP2 to the outside of the substrate processing apparatus. The liquid discharge part EL1 has, for example, The liquid discharge pipe part Tg1 of the eighth pipe part Tb8. The eighth piping part Tb8 has, for example, a first end connected to communicate with the lower part of the chemical solution processing unit CP2, and a second end connected for the purpose of communicating with the processing liquid output portion Ex0.

The liquid replenishing part AL1B can perform, for example, a process (liquid replenishing process) of replenishing the pre-use phosphoric acid aqueous solution as the second process liquid from the process liquid supply source En0 to the liquid discharge part EL1B. This produces an aqueous phosphoric acid solution (also referred to as a mixed phosphoric acid aqueous solution) as a mixed solution in which the used phosphoric acid aqueous solution as the first treatment liquid and the pre-use phosphoric acid aqueous solution as the second treatment liquid are mixed. Here, for example, since the dissolved concentration of the substrate component (such as silicon) of the phosphoric acid aqueous solution before use is lower than that of the used phosphoric acid aqueous solution, the mixed phosphoric acid aqueous solution becomes the substrate component (such as silicon) with a higher dissolved concentration than the used phosphoric acid aqueous solution. Low state. Here, the liquid replenishing part AL1B has, for example, the eleventh piping part Tb11 as a liquid replenishing pipe part connected to the liquid discharge part EL1B. The eleventh piping part Tb11 has, for example, a first end connected to the processing liquid supply source En0, and a second end connected for the purpose of communicating in a form that merges with the eighth piping part Tb8. A third flow control unit Cf3 is provided in the eleventh piping portion Tb11. The third flow control unit Cf3 has, for example, a 10th valve V10 that opens and closes the flow path of the 11th piping portion Tb11, and a third flow meter M3 that measures the flow rate of the phosphoric acid aqueous solution.

In addition, for example, in the first embodiment and each modification described above, the processing liquid supply source En0 for supplying the processing liquid to the second liquid supply section SL2 and the liquid supply section SL2B, and the processing liquid supply source En0 for supplying the liquid replenishing section AL1 The processing liquid supply source En0 of the second processing liquid is set as a processing liquid supply source of a different system. In this case, the processing liquid supplied to the second liquid supply part SL2 and the liquid supply part SL2B may be adjusted to contain a certain degree of substrate components, for example By. Moreover, for example, in the adjustment tank SB1, the processing liquid supplied to the 2nd liquid supply part SL2 may contain a substrate component to some extent. In addition, from a different point of view, for example, the dissolved concentration of the substrate component of the second processing liquid supplied to the liquid replenishment part AL1 may be higher than the substrate component of the processing liquid supplied to the second liquid supply part SL2 and the liquid supply part SL2B. The dissolved concentration is lower.

Of course, it is also possible to combine all or a part of the above-mentioned one embodiment and various modifications as appropriate and within a range that does not contradict each other.

10: Control Department

52: Liquid Treatment Department

AL1: Liquid Replenishment Department

B1a: 1st inner tank

B1b: The first outer tank

B2a: 2nd inner tank

B2b: 2nd outer tank

CB1: adjustment slot

CB2: Chemical liquid treatment tank

Cf1: The first flow control unit

Cf2: The second flow control unit

Cf3: The third flow control section

CL1: The first liquid circulation part

CL2: The second liquid circulation part

Ct1: cooling box

EL1: Liquid discharge part

En0: Treatment liquid supply source

Ex0: Treatment liquid output part

Fl1: filter

Ht1: No. 1 heater

Ht2: 2nd heater

LF2: Lift

M1: The first flow meter

M2: 2nd flow meter

M3: 3rd flow meter

M4: Inspection Department

Pm1: Pump 1

Pm2: 2nd pump

SL1: The first liquid supply part

SL2: Second liquid supply part

Tb1~Tb11: 1st~11th piping part

Tg1: Liquid discharge pipe

V1~V10: 1st~10th valve

W: substrate

Claims (20)

A substrate processing device is provided with: The processing part, which performs etching processing on the substrate by the processing liquid; A liquid supply part, which has a liquid supply pipe part for supplying the treatment liquid to the treatment part; A liquid discharge part having a liquid discharge pipe part for discharging the first processing liquid used after the etching process on the substrate in the processing part from the processing part to the outside of the substrate processing apparatus; A liquid replenishing section for mixing the first processing liquid and the second processing liquid by replenishing a second processing liquid having a lower dissolved concentration of the components constituting the substrate than the first processing liquid to the liquid discharge section The mixed solution is generated and has a liquid replenishing tube connected to the liquid discharge part; and A control unit that controls the supply of the processing liquid to the processing unit by the liquid supply unit and the supply of the second processing liquid to the liquid discharge unit by the liquid replenishing unit. Such as the substrate processing apparatus of claim 1, wherein: The liquid replenishing unit mixes the second processing liquid with the first processing liquid, so that the dissolved concentration of the components constituting the substrate in the mixed solution does not reach the solubility. Such as the substrate processing apparatus of claim 1 or 2, wherein, The above treatment liquid contains an aqueous phosphoric acid solution, The above-mentioned substrate has a silicon nitride film, The etching process includes a process of dissolving the silicon nitride film by the phosphoric acid aqueous solution. Such as the substrate processing apparatus of claim 1 or 2, wherein, The liquid supply unit supplies the second processing liquid to the processing unit. Such as the substrate processing apparatus of claim 1 or 2, wherein, The processing section discharges the first processing liquid to the liquid discharge section in response to the supply of the processing liquid from the liquid supply section, When the control section performs the etching process on the substrate by the processing section, the processing liquid performed by the liquid supply section is supplied to the processing section twice or more, and the liquid replenishing section performs the process Two or more replenishments of the second processing liquid toward the liquid discharge portion are performed simultaneously. Such as the substrate processing apparatus of claim 1 or 2, wherein, The processing section discharges the first processing liquid to the liquid discharge section in response to the supply of the processing liquid from the liquid supply section, The control section executes the replenishment of the second processing liquid by the liquid replenishing section toward the liquid discharge section at least once before performing the etching processing on the substrate by the processing section, and then performs the replenishment by the processing section When performing the etching process on the substrate, the processing liquid supplied by the liquid supply unit is supplied to the processing unit, and the second processing liquid performed by the liquid replenishing unit is supplied to the liquid discharge unit. carried out. Such as the substrate processing apparatus of claim 1 or 2, wherein, The control section borrows at a predetermined time after the etching process on the substrate by the processing section is performed and until the etching process on the substrate by the processing section is performed next. The replenishment of the second processing liquid toward the liquid discharge section by the liquid replenishing section is performed. Such as the substrate processing apparatus of claim 1 or 2, wherein, The liquid discharge portion further includes cooling for cooling the first processing liquid box, The liquid discharge pipe portion includes a first portion connecting the processing portion and the cooling tank, and a second portion connected to the cooling tank for discharging liquid to the outside of the substrate processing apparatus. Such as the substrate processing apparatus of claim 8, wherein The liquid discharge unit further includes a detection unit that detects the storage amount of the liquid stored in the cooling tank, The processing unit discharges the first processing liquid to the liquid discharge unit in accordance with the supply of the processing liquid from the liquid supply unit, and The control unit prohibits the execution of the etching process on the substrate by the processing unit when the detection unit detects that the storage amount reaches the first threshold value. Such as the substrate processing apparatus of claim 7, wherein: The liquid discharge section further includes a cooling tank for cooling the first processing liquid, The liquid discharge pipe portion includes a first portion connecting the processing portion and the cooling tank, and a second portion connected to the cooling tank for discharging liquid to the outside of the substrate processing apparatus, The liquid discharge unit further includes a detection unit that detects the storage amount of the liquid stored in the cooling tank, If the control unit detects that the storage amount reaches the second threshold value by the detection unit, it prohibits the second treatment liquid performed by the liquid replenishing unit at the predetermined time point toward the liquid discharge unit The supplementary implementation. A substrate processing method, a substrate processing method of a substrate processing device Law; it has: An etching step, in which the substrate is etched with a processing liquid in the processing part; A liquid supply step, which supplies the processing liquid to the processing section via a liquid supply pipe section; A liquid discharge step of discharging the first processing liquid used in the etching step from the processing section to the outside of the substrate processing apparatus via a liquid discharge section including a liquid discharge pipe section; and A liquid replenishing step of replenishing a second processing liquid whose dissolved concentration of the components constituting the substrate is lower than the first processing liquid to the liquid discharge portion through a liquid replenishing pipe portion, thereby mixing the first processing liquid and the second processing liquid Treat the liquid to generate a mixed solution. Such as the substrate processing method of claim 11, wherein: In the liquid replenishing step, by mixing the second processing liquid with the first processing liquid, the dissolved concentration of the components constituting the substrate in the mixed solution does not reach the solubility. Such as the substrate processing method of claim 11 or 12, wherein: The above treatment liquid contains an aqueous phosphoric acid solution, The above-mentioned substrate has a silicon nitride film, In the etching step, the silicon nitride film is dissolved by the phosphoric acid aqueous solution. Such as the substrate processing method of claim 11 or 12, wherein: In the liquid supply step, the second processing liquid is supplied to the processing section via the liquid supply pipe section. Such as the substrate processing method of claim 11 or 12, wherein: In the liquid discharge step, the processing unit discharges the first processing liquid to the liquid discharge unit in accordance with the supply of the processing liquid in the liquid supply step, and When the etching process is performed in the etching step, two or more supplies of the processing liquid through the liquid supply pipe section in the liquid supply step toward the processing section and the liquid replenishment step through the liquid replenishment pipe Two or more replenishments of the second processing liquid toward the liquid discharge section of the section are performed simultaneously. Such as the substrate processing method of claim 11 or 12, wherein: In the liquid discharging step, in response to the supply of the processing liquid through the liquid supply pipe section to the processing section in the liquid supply step, the first processing liquid is discharged from the processing section to the liquid discharge section, Performing the replenishment of the second processing liquid through the liquid replenishing pipe portion toward the liquid discharge portion in the liquid replenishing step at least once before the etching processing in the etching step, When the etching process is performed in the etching step, the supply of the processing liquid via the liquid supply pipe portion in the liquid supply step to the processing portion is performed, and the supply of the processing liquid via the liquid supply pipe portion in the liquid replenishment step is performed. The second treatment liquid is replenished toward the liquid discharge section. Such as the substrate processing method of claim 11 or 12, wherein: After the etching process is performed in the etching step and until the etching process of the next etching step is performed, the second liquid replenishing step through the liquid replenishing pipe portion is performed at a predetermined time point. The treatment liquid is replenished toward the above-mentioned liquid discharge part. Such as the substrate processing method of claim 11 or 12, wherein: The liquid discharging step includes: a first liquid discharging step of discharging the first treatment liquid from the treatment part to the first part included in the liquid discharge pipe part; and the liquid discharging part is included in the liquid discharging part and connected to the Part 1 of the cooling box will be the first The liquid cooling step of cooling the processing liquid or the mixed solution, and discharging the mixed solution from the cooling tank to the substrate processing apparatus through the second part included in the liquid discharge pipe portion and connected to the cooling tank Outside the second liquid discharge step. Such as the substrate processing method of claim 18, wherein: It further has a detection step of detecting the storage amount of the liquid stored in the cooling tank, In the liquid discharging step, in response to the supply of the treatment liquid via the liquid supply pipe section to the treatment section in the liquid supply step, the first treatment liquid is discharged from the treatment section to the liquid discharge section, If it is detected that the storage amount reaches the first threshold value in the detection step, the execution of the etching process in the etching step is prohibited. Such as the substrate processing method of claim 17, wherein: The liquid discharging step includes: a first liquid discharging step of discharging the first treatment liquid from the treatment part to a first part included in the liquid discharge pipe part; In the cooling tank of the first part, the liquid cooling step of cooling the first processing liquid or the mixed solution, and from the cooling tank through the second part which is included in the liquid discharge pipe and connected to the cooling tank Discharging the mixed solution to a second liquid discharging step outside of the substrate processing apparatus, The above substrate processing method further has a detection step of detecting the storage amount of the liquid stored in the cooling tank, If it is detected in the above detection step that the storage amount reaches the second threshold value, prohibit the second treatment liquid passing through the liquid replenishing pipe portion toward the above at the predetermined time in the liquid replenishing step. Replenishment of the liquid drain.

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