TWI775907B - Manufacturing method of base material for metal mask, manufacturing method of metal mask for vapor deposition, base material for metal mask, and metal mask for vapor deposition - Google Patents

Manufacturing method of base material for metal mask, manufacturing method of metal mask for vapor deposition, base material for metal mask, and metal mask for vapor deposition Download PDF

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TWI775907B
TWI775907B TW107126029A TW107126029A TWI775907B TW I775907 B TWI775907 B TW I775907B TW 107126029 A TW107126029 A TW 107126029A TW 107126029 A TW107126029 A TW 107126029A TW I775907 B TWI775907 B TW I775907B
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metal mask
sheet
resist
metal
base material
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TW201840881A (en
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三上菜穗子
田村純香
寺田玲爾
倉田真嗣
藤戶大生
西辻清明
西剛廣
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日商凸版印刷股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/013Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
    • B32B15/015Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/22Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling plates, strips, bands or sheets of indefinite length
    • B21B1/227Surface roughening or texturing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B3/00Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • B21B3/02Rolling special iron alloys, e.g. stainless steel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • C23F1/04Chemical milling
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/40Alkaline compositions for etching other metallic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B2261/00Product parameters
    • B21B2261/02Transverse dimensions
    • B21B2261/04Thickness, gauge

Abstract

具備表面及與表面相反側之面、即背面的金屬壓延薄片當中之表面及背面至少一者為處理對象。金屬遮罩用基材的製造方法係藉由將處理對象以酸性蝕刻液蝕刻3μm以上,使金屬壓延薄片所具有的厚度薄到10μm以下並以成為具有0.2μm以上的表面粗糙度Rz的阻劑用處理面之方式將處理對象粗化,獲得金屬製的金屬遮罩用薄片。 At least one of the surface and the back surface of the metal rolled sheet having the surface and the surface opposite to the surface, that is, the back surface, is the object to be processed. The method for producing a base material for a metal mask is to etch the object to be processed with an acid etching solution of 3 μm or more, so that the thickness of the rolled metal sheet is reduced to 10 μm or less and becomes a resist having a surface roughness Rz of 0.2 μm or more The processing object is roughened by processing the surface to obtain a metal sheet for a metal mask.

Description

金屬遮罩用基材的製造方法、蒸鍍用金屬遮罩的製造方法、金屬遮罩用基材及蒸鍍用金屬遮罩 Manufacturing method of base material for metal mask, manufacturing method of metal mask for vapor deposition, base material for metal mask, and metal mask for vapor deposition

本發明係有關一種金屬遮罩用基材的製造方法、使用金屬遮罩用基材之蒸鍍用金屬遮罩的製造方法、金屬遮罩用基材及蒸鍍用金屬遮罩。 The present invention relates to a method for producing a metal mask substrate, a method for producing a metal mask for vapor deposition using the substrate for metal mask, the substrate for metal mask, and a metal mask for vapor deposition.

已知使用蒸鍍法所製造的顯示裝置之一為有機EL顯示器。有機EL顯示器所具備的有機層係在蒸鍍步驟中已昇華的有機分子之堆積物。於蒸鍍步驟所用的金屬遮罩之開口,係供已昇華的有機分子通過的通路,且具有與有機EL顯示器中之畫素的形狀對應之形狀(例如,參照專利文獻1)。 One of the display devices manufactured using the vapor deposition method is known as an organic EL display. The organic layer included in the organic EL display is a stack of organic molecules sublimated in the vapor deposition step. The opening of the metal mask used in the vapor deposition step is a passage through which sublimated organic molecules pass, and has a shape corresponding to the shape of a pixel in an organic EL display (for example, refer to Patent Document 1).

先前技術文獻prior art literature 專利文獻Patent Literature

專利文獻1 日本特開2015-055007號公報 Patent Document 1 Japanese Patent Application Laid-Open No. 2015-055007

然而,伴隨著顯示裝置的顯示品質提高、顯示裝置的高精細化進展,關於上述的有機EL顯示器甚至是決定畫素尺寸的金屬遮罩,被期望在使用金屬遮罩 的成膜上高精細化。近年被期望在有機EL顯示器上具有700ppi以上的高精細化,因此,被期望有可以形成如此被高精細化之有機EL顯示器中的有機層之金屬遮罩。 However, with the improvement in display quality of display devices and the progress of high-definition display devices, the above-mentioned organic EL displays, even the metal masks that determine the pixel size, are expected to be high-definition in film formation using the metal masks. . In recent years, an organic EL display has been expected to have a high definition of 700 ppi or more, and therefore, a metal mask that can form an organic layer in such a high-definition organic EL display is expected.

此外,對於使用金屬遮罩的成膜之高精細化係不受限於含有有機EL顯示器的顯示裝置之製造,在各種裝置所具備的配線之形成或各種裝置所具備的機能層等之使用金屬遮罩的蒸鍍亦被期待。 In addition, the high definition of film formation using metal masks is not limited to the manufacture of display devices including organic EL displays, and the use of metals in the formation of wirings provided in various devices, and the use of functional layers in various devices. Evaporation of masks is also expected.

本發明之目的在於提供一種能將使用蒸鍍用金屬遮罩之成膜高精細化的金屬遮罩用基材的製造方法、蒸鍍用金屬遮罩的製造方法、金屬遮罩用基材及蒸鍍用金屬遮罩。 An object of the present invention is to provide a method for producing a metal mask substrate, a method for producing a metal mask for vapor deposition, a substrate for a metal mask, and the Metal mask for vapor deposition.

用以解決上述課題的金屬遮罩用基材的製造方法,包含:準備金屬壓延薄片,該金屬壓延薄片具備表面和為與前述表面相反側的面、即背面,該金屬壓延薄片的前述表面及前述背面至少一方是處理對象;及將前述處理對象藉由酸性蝕刻液蝕刻3μm以上,使前述金屬壓延薄片所具有的厚度薄到10μm以下,並以可成為具有0.2μm以上的表面粗糙度Rz之阻劑用處理面的方式將前述處理對象粗化,藉以獲得金屬製的金屬遮罩用薄片。 A method for producing a base material for a metal mask for solving the above-mentioned problems, comprising preparing a rolled metal sheet having a surface and a surface opposite to the surface, that is, a back surface, the surface of the rolled metal sheet and the back surface. At least one of the back surfaces is the object to be processed; and the object to be processed is etched by an acid etching solution of 3 μm or more, so that the thickness of the rolled metal sheet is reduced to 10 μm or less, and the surface roughness Rz of 0.2 μm or more can be obtained. The resist is roughened by the method of treating the surface to obtain a metal sheet for a metal mask.

用以解決上述課題的蒸鍍用金屬遮罩的製造方法,包含:形成具備至少1個阻劑用處理面的金屬遮罩用基材;在1個前述阻劑用處理面形成阻劑層;藉由將前述阻劑層圖案化而形成阻劑遮罩;及使用前述阻 劑遮罩對前述金屬遮罩用基材進行蝕刻。使用上述金屬遮罩用基材的製造方法形成前述金屬遮罩用基材。 A method for producing a metal mask for vapor deposition for solving the above-mentioned problems, comprising: forming a base material for a metal mask having at least one treated surface for a resist; and forming a resist layer on one of the treated surfaces for a resist; A resist mask is formed by patterning the resist layer; and the metal mask substrate is etched using the resist mask. The said base material for metal masks is formed using the manufacturing method of the said base material for metal masks.

用以解決上述課題的金屬遮罩基材,包含具備表面和與前述表面相反側的面、即背面的金屬薄片,前述表面及前述背面至少一方是阻劑用處理面,前述金屬薄片所具有的厚度是10μm以下,前述阻劑用處理面的表面粗糙度Rz是0.2μm以上。 A metal mask base material for solving the above-mentioned problems includes a metal flake having a surface and a surface opposite to the surface, that is, a back surface, at least one of the surface and the back surface is a resist-treated surface, and the metal flake has a The thickness is 10 μm or less, and the surface roughness Rz of the resist-treated surface is 0.2 μm or more.

用以解決上述課題的蒸鍍用金屬遮罩含有金屬遮罩用基材,前述金屬遮罩用基材是上述金屬遮罩用基材,前述金屬遮罩用基材所含有的前述金屬薄片是具有貫通前述表面和前述背面之間的複數個貫通孔。 A metal mask for vapor deposition to solve the above-mentioned problems includes a base material for a metal mask, the base material for a metal mask is the above-mentioned base material for a metal mask, and the metal flakes contained in the base material for a metal mask are It has a plurality of through holes penetrating between the front surface and the back surface.

依據上述構成,由於金屬遮罩用薄片所具有的厚度是10μm以下,故可將形成於金屬遮罩用薄片的遮罩開口之深度設為10μm以下。因此,可減少從蒸鍍粒子觀看成膜對象時成為蒸鍍用金屬遮罩的陰影的部分,亦即,可抑制陰影效應,故而能在成膜對象獲得追隨遮罩開口形狀的形狀,進而可謀求使用蒸鍍用金屬遮罩之成膜的高精細化。而且,在金屬遮罩用薄片形成遮罩開口之際,首先,於阻劑用處理面形成阻劑層時,其阻劑層和金屬遮罩用基材之密接性可比粗化前還要提高。而且,由於阻劑層從金屬遮罩用薄片被剝下等所致形狀精度之降低可於形成遮罩開口時進行抑制,所以關於這點可謀求使用蒸鍍用金屬遮罩的成膜之高精細化。 According to the above configuration, since the thickness of the metal mask sheet is 10 μm or less, the depth of the mask opening formed in the metal mask sheet can be 10 μm or less. Therefore, the shadow portion of the metal mask for vapor deposition can be reduced when the film-forming object is viewed from the vapor-deposited particles, that is, the shadow effect can be suppressed, so that the film-forming object can have a shape that follows the shape of the mask opening, and further High-definition film formation using a metal mask for vapor deposition is sought. Furthermore, when forming the mask opening in the sheet for metal mask, first, when forming the resist layer on the treated surface for resist, the adhesion between the resist layer and the base material for metal mask can be improved more than before roughening . In addition, since the reduction in shape accuracy due to peeling of the resist layer from the metal mask sheet, etc. can be suppressed when forming the mask opening, it is possible to achieve high film formation using the metal mask for vapor deposition in this regard. streamline.

在上述金屬遮罩用基材的製造方法中,前述處理對象亦可為前述表面及前述背面雙方。 In the manufacturing method of the said base material for metal masks, the said processing object may be both the said front surface and the said back surface.

依據上述構成,不論是由表面形成的阻劑用處理面還是由背面形成的阻劑用處理面,對於任一阻劑用處理面都可形成阻劑層。因此,可抑制因搞錯形成阻劑層的對象之面而導致難以獲得阻劑層和金屬遮罩用基材之密接性,甚至是抑制在製造蒸鍍用金屬遮罩時良率降低。 According to the above-mentioned configuration, a resist layer can be formed on any of the treated surfaces for resists regardless of whether it is the treated surface for resists formed from the front surface or the treated surface for resists formed from the back surface. Therefore, it is possible to suppress that it is difficult to obtain the adhesion between the resist layer and the base material for a metal mask due to the wrong surface on which the resist layer is formed, and even to suppress a decrease in yield when manufacturing the metal mask for vapor deposition.

上述金屬遮罩用基材的製造方法中,亦可前述處理對象係前述表面及前述背面任一方,前述製造方法更包含在與前述處理對象相反側之面上積層樹脂製的支持層,在前述金屬壓延薄片與前述支持層層積的狀態下蝕刻前述處理對象,藉此,獲得前述金屬遮罩用薄片與前述支持層積層之金屬遮罩用基材。 In the above-mentioned manufacturing method of the base material for a metal mask, the object to be treated may be any one of the front surface and the back surface, and the manufacturing method may further comprise laminating a resin-made support layer on the surface opposite to the object to be treated, and the aforementioned The above-mentioned processing object is etched in the state in which the metal rolled sheet and the said support layer are laminated|stacked, and the base material for metal masks in which the said sheet for metal masks and the said support layer are laminated|stacked is obtained by this.

上述金屬遮罩用基材的製造方法中,亦可前述蝕刻包含蝕刻前述表面及前述背面其中一方的第1處理對象,之後,蝕刻前述表面及前述背面其中另一方的第2處理對象,前述製造方法更包含在蝕刻前述第1處理對象之後,於藉前述第1處理對象之蝕刻而獲得之前述阻劑用處理面上積層樹脂製的支持層,在前述金屬壓延薄片與前述支持層層積的狀態蝕刻前述第2處理對象,藉此,獲得前述金屬遮罩用薄片與前述支持層積層之金屬遮罩用基材。 In the above-mentioned method for producing a base material for a metal mask, the etching may include etching the first treatment object of one of the front surface and the back surface, and then etching the second treatment object of the other one of the front surface and the back surface. The method further includes after etching the first treatment object, laminating a resin-made support layer on the treated surface of the resist obtained by etching the first treatment object, and laminating the metal rolling sheet and the support layer on the surface. The said 2nd process object is state-etched, and by this, the base material for metal masks in which the said sheet for metal masks and the said support layer are laminated|stacked is obtained.

依據上述構成,在對金屬遮罩用薄片搬送或對金屬遮罩用薄片進行後處理中,可減少起因於金屬遮罩用薄片的厚度是10μm以下所致金屬遮罩用薄片的脆弱性而造成金屬遮罩用薄片的處理麻煩。 According to the above configuration, the fragility of the metal mask sheet due to the thickness of the metal mask sheet being 10 μm or less can be reduced during the conveyance of the metal mask sheet or the post-processing of the metal mask sheet. The handling of the sheet metal mask is troublesome.

上述金屬遮罩用基材的製造方法中,以前述金屬壓延薄片是恆範鋼(invar)壓延薄片,前述金屬遮罩用薄片是恆範鋼製者更佳。 In the above-mentioned manufacturing method of the base material for a metal mask, it is preferable that the metal rolled sheet is an invar rolled sheet, and the metal mask sheet is an invar steel.

依據上述構成,由於成膜對象是玻璃基板時,玻璃基板的線膨脹係數和恆範鋼的線膨脹係數是相同程度,故可將由金屬遮罩基材形成的金屬遮罩適用於對玻璃基板進行成膜,亦即,可將已提高形狀精度的金屬遮罩適用於對玻璃基板進行成膜。 According to the above configuration, when the film formation object is a glass substrate, the linear expansion coefficient of the glass substrate and the linear expansion coefficient of Hengfan steel are approximately the same, so the metal mask formed of the metal mask base material can be applied to the glass substrate. Film formation, that is, a metal mask whose shape accuracy has been improved can be applied to film formation on a glass substrate.

上述蒸鍍用金屬遮罩的製造方法中,前述金屬遮罩用基材含有前述金屬遮罩用薄片和樹脂製的支持層之積層體,將形成有前述阻劑遮罩後的前述金屬遮罩用基材暴露於鹼溶液,藉以從前述金屬遮罩用基材將前述支持層以化學方式除去者更佳。 In the above-mentioned method for producing a metal mask for vapor deposition, the base material for metal mask includes a laminate of the sheet for metal mask and a resin-made support layer, and the metal mask on which the resist mask is formed is formed. More preferably, the support layer is chemically removed from the metal mask substrate by exposing the substrate to an alkaline solution.

依據上述構成,相較於從金屬遮罩用薄片將支持層以物理方式剝下的情況,由於外力未作用於金屬遮罩用薄片,故可抑制在金屬遮罩用薄片產生皺紋或變形。 According to the above configuration, since the external force does not act on the metal mask sheet, compared with the case where the support layer is physically peeled off from the metal mask sheet, the occurrence of wrinkles and deformation in the metal mask sheet can be suppressed.

上述金屬遮罩基材中,亦可為前述阻劑用處理面具有橢圓錘狀的複數個凹陷、即粒子痕,前述各粒子痕的長徑方向對齊。 In the above-mentioned metal mask base material, the treated surface for the resist may have a plurality of depressions in the shape of an elliptical hammer, that is, particle traces, and the longitudinal directions of the particle traces may be aligned.

金屬薄片通常是透過壓延來製造,所以沒有在金屬薄片的製造過程所添加的脫氧劑的氧化物等之粒子混入金屬薄片的情形。混入金屬薄片的表面之粒子係具有在金屬材的壓延方向延伸且於壓延方向具有長徑的橢圓錘狀。當在阻劑用處理面之中供形成遮罩開口的 部位殘存這種粒子時,會有用以形成遮罩開口的蝕刻被粒子妨礙之虞。 Metal flakes are usually produced by rolling, so that particles such as oxides of deoxidizers added during the production process of the metal flakes are not mixed into the metal flakes. The particles mixed into the surface of the metal flakes have an elliptical hammer shape extending in the rolling direction of the metal material and having a long axis in the rolling direction. If such particles remain on the resist-treated surface where the mask openings are to be formed, the etching for forming the mask openings may be hindered by the particles.

關於這點,依據上述構成,阻劑用處理面具有長徑方向是對齊之橢圓錘狀的複數個粒子痕,亦即,由於上述的粒子既由阻劑用處理面除去,故在形成遮罩開口時,亦可提高遮罩開口的形狀、尺寸的精度。 In this regard, according to the above configuration, the treated surface for the resist has a plurality of particle traces in the shape of an elliptical hammer whose major axis is aligned. That is, since the above-mentioned particles are removed from the treated surface for the resist, the mask is formed when the When opening, the accuracy of the shape and size of the opening of the mask can also be improved.

依據本發明,能讓採用蒸鍍用金屬遮罩的成膜高精細化。 According to the present invention, high-definition film formation using a metal mask for vapor deposition can be achieved.

10‧‧‧金屬遮罩用基材 10‧‧‧Substrate for metal mask

11、31、71‧‧‧恆範鋼薄片 11, 31, 71‧‧‧Hengfan steel sheet

11a、21a、31a、41a、51a‧‧‧表面 11a, 21a, 31a, 41a, 51a‧‧‧surface

11b、21b、31b、41b、51b‧‧‧背面 11b, 21b, 31b, 41b, 51b‧‧‧Back

11c、23a、31e、41c、51c‧‧‧貫通孔 11c, 23a, 31e, 41c, 51c‧‧‧Through hole

12‧‧‧支持層 12‧‧‧Support Layer

12a‧‧‧聚醯亞胺框 12a‧‧‧Polyimide frame

21‧‧‧恆範鋼壓延薄片 21‧‧‧Hengfan Steel Rolled Sheet

21c、71a‧‧‧阻劑用處理面 21c, 71a‧‧‧ treated surface for resist

22‧‧‧阻劑層 22‧‧‧Resistant layer

23‧‧‧阻劑遮罩 23‧‧‧Resistant Mask

31c‧‧‧第1孔 31c‧‧‧1st hole

31d‧‧‧第2孔 31d‧‧‧2nd hole

41‧‧‧蒸鍍用金屬遮罩薄片 41‧‧‧Metal mask sheet for vapor deposition

51、61、62‧‧‧蒸鍍用金屬遮罩 51, 61, 62‧‧‧Metal mask for vapor deposition

52‧‧‧框架 52‧‧‧Framework

53‧‧‧接著層 53‧‧‧Second layer

72‧‧‧第1粒子痕 72‧‧‧First particle scar

73‧‧‧第2粒子痕 73‧‧‧Second particle scar

C‧‧‧中央部分 C‧‧‧Central part

S1‧‧‧第1表層部分 S1‧‧‧First surface part

S2‧‧‧第2表層部分 S2‧‧‧Second surface layer

圖1係表示將本發明的金屬遮罩用基材具體化後的1個實施形態中之金屬遮罩用基材的立體構造之立體圖。 1 : is a perspective view which shows the three-dimensional structure of the base material for metal masks in one Embodiment which actualized the base material for metal masks of this invention.

圖2係表示在蒸鍍用金屬遮罩的製造方法中準備恆範鋼壓延薄片的步驟之步驟圖。 FIG. 2 is a step diagram showing a step of preparing a rolled sheet of Hengfan steel in a method of manufacturing a metal mask for vapor deposition.

圖3係表示在蒸鍍用金屬遮罩的製造方法中蝕刻恆範鋼壓延薄片的背面的步驟之步驟圖。 FIG. 3 is a step diagram showing a step of etching the back surface of a rolled sheet of Hengfan steel in a method for producing a metal mask for vapor deposition.

圖4係表示在蒸鍍用金屬遮罩的製造方法中於恆範鋼壓延薄片的阻劑用處理面形成支持層的步驟之步驟圖。 4 is a process diagram showing a step of forming a support layer on the treated surface for resists of a rolled sheet of Hengfan Steel in a method for producing a metal mask for vapor deposition.

圖5係表示在蒸鍍用金屬遮罩的製造方法中蝕刻恆範鋼壓延薄片的表面的步驟之步驟圖。 FIG. 5 is a step diagram showing a step of etching the surface of a rolled sheet of Hengfan steel in a method for producing a metal mask for vapor deposition.

圖6係示意顯示恆範鋼壓延薄片中的金屬氧化物的分布之模式圖。 Figure 6 is a schematic diagram showing the distribution of metal oxides in a rolled sheet of Hengfan Steel.

圖7係表示在蒸鍍用金屬遮罩的製造方法中形成阻劑層的步驟之步驟圖。 FIG. 7 is a step diagram showing a step of forming a resist layer in a method of manufacturing a metal mask for vapor deposition.

圖8係表示在蒸鍍用金屬遮罩的製造方法中形成阻劑遮罩的步驟之步驟圖。 FIG. 8 is a process diagram showing a step of forming a resist mask in a method of manufacturing a metal mask for vapor deposition.

圖9係表示在蒸鍍用金屬遮罩的製造方法中蝕刻恆範鋼薄片的步驟之步驟圖。 FIG. 9 is a step diagram showing a step of etching a constant-grade steel sheet in a method of manufacturing a metal mask for vapor deposition.

圖10係表示藉由蝕刻恆範鋼薄片的表面與背面雙方所形成的貫通孔的剖面形狀之剖面圖。 10 is a cross-sectional view showing a cross-sectional shape of a through hole formed by etching both the surface and the back surface of a steel sheet.

圖11係表示在蒸鍍用金屬遮罩的製造方法中除去阻劑遮罩的步驟之步驟圖。 FIG. 11 is a process diagram showing a step of removing the resist mask in the manufacturing method of the metal mask for vapor deposition.

圖12係表示在蒸鍍用金屬遮罩的製造方法中將支持層以化學方式除去的步驟之步驟圖。 FIG. 12 is a step diagram showing a step of chemically removing the support layer in the method for producing a metal mask for vapor deposition.

圖13係表示貼附於框架的蒸鍍用金屬遮罩的剖面構造之剖面圖。 13 is a cross-sectional view showing a cross-sectional structure of the metal mask for vapor deposition attached to the frame.

圖14係表示貼附於框架的蒸鍍用金屬遮罩的平面構造之平面圖。 FIG. 14 is a plan view showing the planar structure of the metal mask for vapor deposition attached to the frame.

圖15係拍攝試驗例1的恆範鋼壓延薄片中的表面之SEM畫像。 FIG. 15 is an SEM image of the surface in the rolled sheet of Hengfan Steel in Test Example 1. FIG.

圖16係拍攝試驗例2的恆範鋼薄片中的阻劑用處理面之SEM畫像。 FIG. 16 is an SEM image of the treated surface for resists in the Hengfan steel sheet of Test Example 2. FIG.

圖17係拍攝試驗例3的恆範鋼薄片中的阻劑用處理面之SEM畫像。 FIG. 17 is an SEM image of the treated surface for resist in the Hengfan steel sheet of Test Example 3. FIG.

圖18係拍攝試驗例4的恆範鋼薄片中的阻劑用處理面之SEM畫像。 FIG. 18 is an SEM image of the treated surface for resist in the Hengfan steel sheet of Test Example 4. FIG.

圖19係拍攝第1粒子痕的SEM畫像。 FIG. 19 is an SEM image of the first particle scar taken.

圖20係拍攝第2粒子痕的SEM畫像。 FIG. 20 is an SEM image of the second particle scar taken.

圖21係表示在變形例中的金屬遮罩和框架之剖面構造的剖面圖。 FIG. 21 is a cross-sectional view showing a cross-sectional structure of a metal mask and a frame in a modification.

圖22係表示在變形例中的金屬遮罩和框架之剖面構造的剖面圖。 FIG. 22 is a cross-sectional view showing a cross-sectional structure of a metal mask and a frame in a modification.

圖23係表示在變形例中的恆範鋼薄片之平面構造的平面圖。 FIG. 23 is a plan view showing the planar structure of a constant-band steel sheet in a modification.

參照圖1至圖20說明將金屬遮罩用基材的製造方法、蒸鍍用金屬遮罩的製造方法、金屬遮罩用基材及蒸鍍用金屬遮罩具體化的1個實施形態。本實施形態中,作為蒸鍍用金屬遮罩的一例,說明用於形成有機EL裝置所具備的有機層之蒸鍍用金屬遮罩。以下依序說明金屬遮罩用基材的構成、包含金屬遮罩用基材的製造方法之蒸鍍用金屬遮罩的製造方法、及試驗例。 1 to 20 , an embodiment in which a method for manufacturing a metal mask substrate, a method for manufacturing a metal mask for vapor deposition, a substrate for metal mask, and a metal mask for vapor deposition is embodied will be described. In the present embodiment, as an example of the metal mask for vapor deposition, a metal mask for vapor deposition for forming an organic layer included in an organic EL device will be described. Hereinafter, the structure of the base material for a metal mask, the manufacturing method of the metal mask for vapor deposition including the manufacturing method of the base material for a metal mask, and a test example are demonstrated.

[金屬遮罩用基材的構成] [Constitution of base material for metal mask]

參照圖1說明金屬遮罩用基材的構成。 The structure of the base material for a metal mask will be described with reference to FIG. 1 .

如圖1所示,金屬遮罩用基材10係金屬遮罩用薄片的一例,含有恆範鋼製的金屬遮罩薄片、即恆範鋼薄片11,恆範鋼薄片11具備表面11a及表面11a相反側的面、即背面11b。恆範鋼薄片11中,表面11a及背面11b是阻劑用處理面且為在蝕刻恆範鋼薄片11時可形成阻劑層的面。 As shown in FIG. 1 , the base material 10 for a metal mask is an example of a sheet for a metal mask, and includes a metal mask sheet made of Hengfan Steel, that is, a Hengfan steel sheet 11, and the Hengfan steel sheet 11 has a surface 11a and a surface The surface opposite to 11a, that is, the back surface 11b. In the Hengfan steel sheet 11 , the front surface 11 a and the back surface 11 b are treated surfaces for a resist, and are surfaces on which a resist layer can be formed when the Hengfan steel sheet 11 is etched.

恆範鋼薄片11的厚度T1係10μm以下,在表面11a中之表面粗糙度Rz及背面11b中之表面粗糙度Rz是0.2μm以下。 The thickness T1 of the steel sheet 11 is 10 μm or less, and the surface roughness Rz in the front surface 11 a and the surface roughness Rz in the back surface 11 b are 0.2 μm or less.

由於恆範鋼薄片11所具有的厚度是10μm以下,故可將形成於恆範鋼薄片11的遮罩開口之深度設為10μm以下。因此,減少在從蒸鍍粒子觀看成膜對象時成為蒸鍍用金屬遮罩陰影的部分,亦即,可抑制陰影效應,因而在成膜對象獲得追隨遮罩開口的形狀之形狀,甚至是,可謀求使用蒸鍍用金屬遮罩之成膜的高精細化。 Since the thickness of the Hengfan steel sheet 11 is 10 μm or less, the depth of the mask opening formed in the Hengfan steel sheet 11 can be set to 10 μm or less. Therefore, the portion that becomes shadow of the metal mask for vapor deposition when the film-forming object is viewed from the vapor-deposited particles is reduced, that is, the shadow effect can be suppressed, so that the film-forming object obtains a shape that follows the shape of the mask opening, even, High-definition film formation using the metal mask for vapor deposition can be achieved.

而且,在恆範鋼薄片11形成遮罩開口時,首先,在表面11a形成阻劑層時,阻劑層和恆範鋼薄片11之密接性可比粗化前還要提高。而且,由於阻劑層從恆範鋼薄片11剝離等所引起的形狀精度降低可在遮罩開口形成中來抑制,關於這點,可謀求使用蒸鍍用金屬遮罩的成膜之高精細化。 Furthermore, when forming the mask opening in the constant-grade steel sheet 11, first, when the resist layer is formed on the surface 11a, the adhesion between the resist layer and the constant-grade steel sheet 11 can be improved more than before roughening. In addition, the reduction in shape accuracy due to peeling of the resist layer from the steel sheet 11 or the like can be suppressed during the formation of the mask opening, and in this regard, it is possible to achieve high definition of the film formation using the metal mask for vapor deposition. .

恆範鋼薄片11的形成材料係含有36質量%的鎳和鐵之鎳鐵合金,即恆範鋼,恆範鋼,亦即恆範鋼薄片11的熱膨脹係數係1.2×10-6/℃左右。 The forming material of the Hengfan steel sheet 11 is a nickel-iron alloy containing 36% by mass of nickel and iron, that is, Hengfan Steel, and the thermal expansion coefficient of the Hengfan steel sheet 11 is about 1.2×10 −6 /°C.

恆範鋼薄片11的熱膨脹係數和作為成膜對象的一例之玻璃基板的熱膨脹係數是相同程度。因此,使用金屬遮罩用基材10製造的蒸鍍用金屬遮罩適用於針對玻璃基板進行成膜,亦即,可將已提高形狀精度的蒸鍍用金屬遮罩適用於對玻璃基板進行成膜。 The thermal expansion coefficient of the steel sheet 11 is approximately the same as the thermal expansion coefficient of a glass substrate which is an example of a film-forming object. Therefore, the metal mask for vapor deposition manufactured using the base material 10 for metal mask is suitable for forming a film on a glass substrate, that is, the metal mask for vapor deposition with improved shape accuracy can be used for forming a glass substrate. membrane.

恆範鋼薄片11的表面中之表面粗糙度Rz係遵循依JIS B 0601-2001的方法所測定的值。表面粗糙度Rz係在具有基準長度的輪廓曲線中之最大高度。 The surface roughness Rz in the surface of the Hengfan steel sheet 11 is a value measured according to the method of JIS B 0601-2001. The surface roughness Rz is the maximum height in the profile curve with the reference length.

金屬遮罩用基材10更具備樹脂製的支持層12,金屬遮罩用基材10係恆範鋼薄片11和支持層12之積層體。恆範鋼薄片11中的背面11b是和支持層12密接。支持層12的形成材料,例如係聚醯亞胺及負型阻劑當中至少一方。支持層12可為聚醯亞胺製的1個層,亦可為負型阻劑製的1個層。或者,支持層12亦可為聚醯亞胺製的層與負型阻劑製的層之積層體。 The base material 10 for a metal mask further includes a resin-made support layer 12 , and the base material 10 for a metal mask is a laminate of the Hengfan steel sheet 11 and the support layer 12 . The back surface 11b of the Hengfan steel sheet 11 is in close contact with the support layer 12 . The material for forming the support layer 12 is, for example, at least one of polyimide and negative resist. The support layer 12 may be one layer made of polyimide or one layer made of negative resist. Alternatively, the support layer 12 may be a laminate of a layer made of polyimide and a layer made of a negative resist.

其中,聚醯亞胺的熱膨脹係數在溫度依存性方面呈現和恆範鋼的熱膨脹係數相同傾向,且熱膨脹係數的值是相同程度。因此,若支持層12的形成材料是聚醯亞胺,則與支持層12是聚醯亞胺以外的樹脂製之構成相比,藉由金屬遮罩用基材10中之溫度的變化,不僅抑制金屬遮罩用基材10產生翹曲進而抑制在恆範鋼薄片11產生翹曲。 Among them, the thermal expansion coefficient of polyimide exhibits the same tendency as the thermal expansion coefficient of Hengfan steel in terms of temperature dependence, and the value of the thermal expansion coefficient is the same degree. Therefore, if the material for forming the support layer 12 is polyimide, compared with the configuration in which the support layer 12 is made of a resin other than polyimide, the change in temperature in the base material 10 for metal mask not only reduces the The occurrence of warpage in the metal mask base material 10 is suppressed, and the occurrence of warpage in the steel sheet 11 is also suppressed.

[蒸鍍用金屬遮罩的製造方法] [Manufacturing method of metal mask for vapor deposition]

參照圖2至圖12說明蒸鍍用金屬遮罩的製造方法。 A method of manufacturing the metal mask for vapor deposition will be described with reference to FIGS. 2 to 12 .

如圖2所示,蒸鍍用金屬遮罩的製造方法包含金屬遮罩用基材10的製造方法,就金屬遮罩用基材10的製造方法而言,首先,準備屬於金屬壓延薄片的一例之恆範鋼壓延薄片21。恆範鋼壓延薄片21具備表面21a及表面21a的相反側的面、即背面21b,恆範鋼壓延薄片21中的表面21a及背面21b是金屬遮罩用基材10的製造方法中的處理對象。 As shown in FIG. 2 , the method of manufacturing a metal mask for vapor deposition includes a method of manufacturing a base material 10 for a metal mask. As for the method of manufacturing the base material 10 for a metal mask, first, an example of a rolled metal sheet is prepared. The Hengfan Steel Rolled Sheet 21. The rolled sheet 21 of Hengfan Steel has a surface 21a and a surface opposite to the surface 21a, that is, a back surface 21b, and the surface 21a and the back surface 21b of the rolled sheet 21 of Hengfan Steel are the objects to be processed in the manufacturing method of the base material 10 for a metal mask. .

恆範鋼壓延薄片21係藉由將恆範鋼製的母材壓延並將壓延後的母材退火而獲得。光是藉由恆範鋼壓延薄片21被壓延使母材的表面及背面中之階差小的份量,在恆範鋼壓延薄片21的表面21a及背面21b各自中的表面粗糙度Rz係比母材的表面及背面中之表面粗糙度Rz還小。 The rolled sheet 21 of Hengfan Steel is obtained by rolling a base material made of Hengfan Steel and annealing the rolled base material. The surface roughness Rz in each of the surface 21a and the back surface 21b of the rolled sheet 21 of Hengfan steel is higher than that of the base material only by the amount of the step difference between the surface and the back surface of the base material being small by rolling the rolled sheet 21 of Hengfan steel. The surface roughness Rz of the front and back surfaces of the material is also small.

恆範鋼壓延薄片21的厚度T2,例如係10μm以上且100μm以下,更佳為10μm以上且50μm以下。 The thickness T2 of the Hengfan Steel rolled sheet 21 is, for example, 10 μm or more and 100 μm or less, and more preferably 10 μm or more and 50 μm or less.

如圖3所示,利用酸性蝕刻液將是處理對象之一且是兩個處理對象中先被蝕刻的第1處理對象例、即背面21b蝕刻3μm以上。蝕刻前的恆範鋼壓延薄片21的背面21b和蝕刻後的恆範鋼壓延薄片21的背面,亦即阻劑用處理面21c之間的差是蝕刻厚度T3,蝕刻厚度T3係3μm以上。 As shown in FIG. 3 , the back surface 21b, which is one of the processing targets and is the first example of the processing target to be etched first among the two processing targets, is etched by 3 μm or more with an acidic etching solution. The difference between the back surface 21b of the rolled Hengfan steel sheet 21 before etching and the back surface of the rolled Hengfan steel sheet 21 after etching, that is, the resist treated surface 21c is the etching thickness T3, which is 3 μm or more.

藉由背面21b的蝕刻,使恆範鋼壓延薄片21的厚度小於蝕刻前的厚度,並以阻劑用處理面21c具有0.2μm以上的表面粗糙度Rz的方式將背面21b粗化。 By etching the back surface 21b, the thickness of the Hengfan steel rolled sheet 21 is made smaller than the thickness before etching, and the back surface 21b is roughened so that the resist treated surface 21c has a surface roughness Rz of 0.2 μm or more.

酸性蝕刻液只要是可蝕刻恆範鋼的蝕刻液且為具有比恆範鋼壓延薄片21的背面21b蝕刻前還粗的組成之溶液即可。酸性蝕刻液,例如係對過氯酸鐵液及過氯酸鐵液和氯化鐵液之混合液混合了過氯酸、鹽酸、硫酸、蟻酸、及醋酸任一者的溶液。背面21b的蝕刻可以是將恆範鋼壓延薄片21浸泡於酸性蝕刻液的浸液式,可以是對恆範鋼壓延薄片21的背面21b噴吹酸性蝕刻液的噴霧式,亦可為對藉由旋轉器而旋轉的恆範鋼壓延薄片21滴下酸性蝕刻液之旋轉式。 The acidic etching solution may be an etching solution capable of etching Hengfan steel and a solution having a rougher composition than before etching of the back surface 21b of the Hengfan steel rolled sheet 21 . The acidic etching solution is, for example, a solution in which any one of perchloric acid, hydrochloric acid, sulfuric acid, formic acid, and acetic acid is mixed with ferric perchlorate solution and a mixed solution of ferric perchlorate solution and ferric chloride solution. The etching of the back side 21b can be a liquid immersion method in which the rolled sheet 21 of Hengfan Steel is immersed in an acid etching solution, a spray type in which an acid etching liquid is sprayed on the back side 21b of the rolled sheet 21 of Hengfan Steel, or a spray method of spraying acid etching solution on the back side 21b of the rolled sheet 21 of Hengfan Steel. A rotary type in which the acid etching solution is dropped on the rolled sheet 21 of Hengfan steel which is rotated by the rotary device.

蝕刻厚度T3係至少為3μm即可,10μm以上者較佳,15μm以上者更佳。 The etching thickness T3 may be at least 3 μm, preferably 10 μm or more, and more preferably 15 μm or more.

如圖4所示,在將恆範鋼壓延薄片21的背面21b蝕刻後,於藉由背面21b的蝕刻所獲得之阻劑用處理面21c積層上述的樹脂製的支持層12。支持層12的厚度T4係例如10μm以上且50μm以下。 As shown in FIG. 4, after the back surface 21b of the Hengfan steel rolled sheet 21 is etched, the above-mentioned resin-made support layer 12 is laminated on the resist treated surface 21c obtained by etching the back surface 21b. The thickness T4 of the support layer 12 is, for example, 10 μm or more and 50 μm or less.

即使恆範鋼壓延薄片21的厚度是10μm以下,於金屬遮罩用基材10的製造過程中,將支持層12與恆範鋼壓延薄片21的積層體之強度以減少起因於積層體的脆弱性之處理麻煩的程度上作提高這點上,支持層12的厚度以10μm以上者更佳。 Even if the thickness of the Hengfan steel rolled sheet 21 is 10 μm or less, in the manufacturing process of the metal mask substrate 10 , the strength of the laminate of the support layer 12 and the Hengfan steel rolled sheet 21 is reduced to reduce the fragility caused by the laminate. The thickness of the support layer 12 is more preferably 10 μm or more in order to increase the degree of troublesome handling.

又,在抑制將支持層12利用鹼溶液從金屬遮罩用基材10除去時所需時間過長這點上,支持層12的厚度以50μm以下者更佳。 Moreover, in order to prevent the time required for removing the support layer 12 from the base material 10 for metal masks with an alkaline solution from being too long, the thickness of the support layer 12 is more preferably 50 μm or less.

支持層12可藉由在形成薄片狀後貼附於阻劑用處理面21c而被積層於阻劑用處理面21c。或者,支持層12亦可藉由將用以形成支持層12的塗液塗布於阻劑用處理面21c而被積層於阻劑用處理面21c。 The support layer 12 can be laminated on the processed surface 21c for resists by sticking to the processed surface 21c for resists after being formed into a sheet shape. Alternatively, the support layer 12 may be laminated on the resist-treated surface 21c by applying the coating liquid for forming the support layer 12 onto the resist-treated surface 21c.

此外,在支持層12含有上述的負型阻劑製的層之情況,將負型阻劑的薄膜貼附於阻劑用處理面21c後,或者,將負型阻劑塗布於阻劑用處理面21c後,對負型阻劑的整體照射紫外線以形成支持層12。 In addition, when the support layer 12 contains the layer made of the above-mentioned negative resist, after the film of the negative resist is attached to the resist treatment surface 21c, or the negative resist is applied to the resist treatment After the surface 21c, ultraviolet rays are irradiated to the whole of the negative resist to form the support layer 12.

如圖5所示,在恆範鋼壓延薄片21與支持層12層積的狀態下,利用酸性蝕刻液對比第1處理對象還後面蝕刻的第2處理對象的一例、即恆範鋼壓延薄片 21的表面21a蝕刻3μm以上。蝕刻前的恆範鋼壓延薄片21的表面21a與蝕刻後的恆範鋼壓延薄片21,亦即,與恆範鋼薄片11中的表面11a之間的差是蝕刻厚度T5,蝕刻厚度T5係3μm以上。 As shown in FIG. 5 , in the state where the Hengfan steel rolled sheet 21 and the support layer 12 are stacked, an example of the second processing object etched after the first processing object is compared with the acid etching solution, namely the Hengfan steel rolled sheet 21. The surface 21a of the etched 3 μm or more. The difference between the surface 21a of the Hengfan steel rolled sheet 21 before etching and the Hengfan steel rolled sheet 21 after etching, that is, the difference between the surface 11a of the Hengfan steel sheet 11 is the etching thickness T5, and the etching thickness T5 is 3 μm above.

如此,恆範鋼壓延薄片21的蝕刻係包含:蝕刻第1處理對象的一例、即恆範鋼壓延薄片21的背面21b,及在之後蝕刻第2處理對象的一例、即表面21a。 In this way, the etching of the Hengfan steel rolled sheet 21 includes etching the back surface 21b of the Hengfan steel rolled sheet 21, which is an example of the first processing object, and then etching the surface 21a, an example of the second processing object.

藉由表面21a的蝕刻,將使用圖2先做了說明的恆範鋼壓延薄片21所具有的厚度T2成為10μm以下,並以表面21a可具有0.2μm以上的表面粗糙度Rz的方式將表面21a粗化。藉此,獲得是金屬製的金屬遮罩用薄片及金屬薄片的一例、即恆範鋼薄片11且在表面11a及背面11b各自的表面粗糙度Rz是0.2μm以上的恆範鋼薄片11,及積層有恆範鋼薄片11和支持層12之金屬遮罩用基材10。 By the etching of the surface 21a, the thickness T2 of the rolled sheet 21 of Hengfan steel previously described using FIG. 2 is 10 μm or less, and the surface 21a is etched so that the surface 21a can have a surface roughness Rz of 0.2 μm or more. coarsening. Thereby, the constant-grade steel sheet 11 which is an example of the metal sheet for metal mask and the metal sheet, that is, the constant-grade steel sheet 11, and the surface roughness Rz of each of the front surface 11 a and the back surface 11 b is obtained is 0.2 μm or more, and the constant-grade steel sheet 11 is obtained, and The base material 10 for a metal mask is laminated with a constant steel sheet 11 and a support layer 12 .

由於恆範鋼壓延薄片21的表面21a及背面21b雙方會被蝕刻,故不論從表面21a形成的阻劑用處理面或從背面21b形成的阻劑用處理面21c,都可對任一阻劑用處理面形成阻劑層。因此,不僅可抑制因搞錯形成阻劑層的對象之面而導致難以獲得阻劑層和金屬遮罩用基材10之密接性,進而亦可抑制在製造蒸鍍用金屬遮罩51時良率降低。 Since both the front surface 21a and the back surface 21b of the rolled sheet 21 of Hengfan Steel are etched, no matter whether the resist-treated surface formed from the surface 21a or the resist-treated surface 21c formed from the back surface 21b, any resist can be treated A resist layer is formed with the treated surface. Therefore, it is possible to suppress not only the difficulty in obtaining the adhesion between the resist layer and the metal mask substrate 10 due to the wrong surface on which the resist layer is to be formed, but also to prevent the production of the metal mask 51 for vapor deposition from being satisfactory. rate decreased.

又,金屬遮罩用基材10係恆範鋼薄片11和支持層12之積層體。因此,在恆範鋼薄片11的搬送或對恆範鋼薄片11進行後處理中,可減少起因於恆範鋼 薄片11的厚度是10μm以下所致恆範鋼薄片11的脆弱性而造成恆範鋼薄片11的處理麻煩。 In addition, the base material 10 for a metal mask is a laminated body of the constant steel sheet 11 and the support layer 12 . Therefore, in the conveying of the steel sheet 11 or the post-processing of the steel sheet 11, it is possible to reduce the fragility of the steel sheet 11 caused by the thickness of the steel sheet 11 being 10 μm or less, resulting in the reduction of the permanent steel sheet. Handling of the steel sheet 11 is troublesome.

酸性蝕刻液只要是用於背面21b之蝕刻的酸性蝕刻液任一者即可,與背面21b之蝕刻所用的酸性蝕刻液相同者更佳。又,表面21a之蝕刻亦只要是浸液式、噴霧式及旋轉式任一者即可,但與背面21b之蝕刻相同方式者更佳。 The acidic etching liquid may be any of the acidic etching liquids used for the etching of the back surface 21b, and it is more preferably the same as the acidic etching liquid used for the etching of the back surface 21b. In addition, the etching of the surface 21a may be any of a liquid immersion type, a spray type, and a rotary type, but the same method as the etching of the back surface 21b is more preferable.

蝕刻厚度T5係至少3μm即可,10μm以上者較佳,15μm以上者更佳。蝕刻厚度T5和上述的蝕刻厚度T3可為相同大小,亦可為彼此相異的大小。 The etching thickness T5 may be at least 3 μm, preferably 10 μm or more, and more preferably 15 μm or more. The etching thickness T5 and the above-mentioned etching thickness T3 may be the same size, or may be different sizes from each other.

此外,在形成恆範鋼壓延薄片21的母材時,通常為了除去混入母材的形成材料中的氧,對母材的形成材料混合例如作為脫氧劑的粒狀的鋁或鎂等。鋁及鎂係被氧化而在氧化鋁及氧化鎂等之金屬氧化物的狀態下包含於母材的形成材料中。在形成母材時,金屬氧化物的大部分雖從母材被去除,但一部份的金屬氧化物會殘留於母材的內部。 In addition, when forming the base material of the Hengfan steel rolled sheet 21, usually, in order to remove oxygen mixed in the base material forming material, granular aluminum, magnesium, etc., as a deoxidizer, for example, are mixed with the base material forming material. Aluminum and magnesium are oxidized and contained in the material for forming the base material in the state of metal oxides such as alumina and magnesia. When the base metal is formed, most of the metal oxide is removed from the base metal, but a part of the metal oxide remains inside the base metal.

如圖6所示,恆範鋼壓延薄片21中,含有恆範鋼壓延薄片21的厚度方向之中央的部分是中央部分C,含有表面21a的部分是第1表層部分S1,含有背面21b的部分是第2表層部分S2。相較於中央部分C,在第1表層部分S1及第2表層部分S2所分布的金屬氧化物多。 As shown in FIG. 6 , in the rolled sheet 21 of Hengfan steel, the part including the center of the rolled steel sheet 21 in the thickness direction is the central part C, the part including the surface 21a is the first surface layer part S1, and the part including the back surface 21b is the second surface layer portion S2. More metal oxides are distributed in the first surface layer part S1 and the second surface layer part S2 than in the center part C.

金屬氧化物在藉由恆範鋼薄片11之蝕刻而形成蒸鍍用金屬遮罩時,係成為阻劑從恆範鋼薄片11剝離或恆範鋼薄片11被過量蝕刻的一個因素。 When a metal mask for vapor deposition is formed by etching the Hengfan steel sheet 11, the metal oxide becomes a factor that the resist is peeled off from the Hengfan steel sheet 11 or the Hengfan steel sheet 11 is etched excessively.

如上述,就金屬遮罩用基材10的製造方法而言,由於恆範鋼壓延薄片21的表面21a及背面21b會被蝕刻,故含有較多金屬氧化物的第1表層部分S1及第2表層部分S2的至少一部份會被除去。因此,相較於恆範鋼壓延薄片21的表面21a及背面21b未被蝕刻的情況,可抑制因金屬氧化物所致阻劑剝離或恆範鋼薄片11過量蝕刻,亦可抑制對金屬遮罩用基材10蝕刻的精度變低的情形。 As described above, in the manufacturing method of the base material 10 for a metal mask, since the surface 21 a and the back surface 21 b of the rolled sheet 21 of Hengfan steel are etched, the first surface layer portion S1 and the second surface layer portion S1 and the second surface layer containing many metal oxides are etched. At least a part of the surface layer portion S2 is removed. Therefore, compared with the case where the surface 21a and the back surface 21b of the rolled sheet 21 of Hengfan steel are not etched, the resist peeling due to metal oxides or excessive etching of the Hengfan steel sheet 11 can be suppressed, and the metal masking can also be suppressed. The case where the precision of etching with the base material 10 is lowered.

如圖7所示,在恆範鋼薄片11的表面11a形成阻劑層22。阻劑層22可藉由在形成薄片狀後再貼附於表面11a而形成於表面11a。或者,阻劑層22亦可藉由用以形成阻劑層22的塗液被塗布於表面11a而形成於表面11a。 As shown in FIG. 7 , a resist layer 22 is formed on the surface 11 a of the Hengfan steel sheet 11 . The resist layer 22 can be formed on the surface 11a by attaching to the surface 11a after being formed into a sheet shape. Alternatively, the resist layer 22 may be formed on the surface 11a by applying a coating liquid for forming the resist layer 22 to the surface 11a.

阻劑層22的形成材料係可為負型阻劑,亦可為正型阻劑。此外,在支持層12的形成材料是負型阻劑時,阻劑層22亦用和支持層12相同材料形成者更佳。 The formation material of the resist layer 22 may be a negative type resist or a positive type resist. In addition, when the material for forming the support layer 12 is a negative type resist, it is more preferable that the resist layer 22 is also formed of the same material as the support layer 12 .

如圖8所示,藉由將阻劑層22圖案化而形成阻劑遮罩23。阻劑遮罩23係具有用以蝕刻恆範鋼薄片11的複數個貫通孔23a。 As shown in FIG. 8 , the resist mask 23 is formed by patterning the resist layer 22 . The resist mask 23 has a plurality of through holes 23 a for etching the constant-scale steel sheet 11 .

在阻劑層22的形成材料是負型阻劑時,對阻劑層22當中之與阻劑遮罩23的各貫通孔23a對應的部分以外之部分照射紫外線,將阻劑層22曝光。然後,將阻劑層22利用顯影液顯影而獲得具有複數個貫通孔23a的阻劑遮罩23。 When the forming material of the resist layer 22 is a negative type resist, the resist layer 22 is exposed to light by irradiating ultraviolet rays to the portion of the resist layer 22 other than the portion corresponding to each through hole 23 a of the resist mask 23 . Then, the resist layer 22 is developed with a developer to obtain a resist mask 23 having a plurality of through holes 23a.

在阻劑層22的形成材料是正型阻劑時,對阻劑層22當中之與阻劑遮罩23的各貫通孔23a對應的部分照射紫外線,將阻劑層22曝光。然後,將阻劑層22利用顯影液顯影而獲得具有複數個貫通孔23a的阻劑遮罩23。 When the forming material of the resist layer 22 is a positive type resist, the portion of the resist layer 22 corresponding to each through hole 23 a of the resist mask 23 is irradiated with ultraviolet rays to expose the resist layer 22 . Then, the resist layer 22 is developed with a developer to obtain a resist mask 23 having a plurality of through holes 23a.

如圖9所示,使用阻劑遮罩23對恆範鋼薄片11進行蝕刻。恆範鋼薄片11的蝕刻,例如,使用氯化鐵溶液。藉此,對恆範鋼薄片11形成貫通表面11a和背面11b之間的複數個貫通孔11c、亦即遮罩開口。於恆範鋼薄片11的沿著厚度方向的剖面,各貫通孔11c的內周面具有大致弧狀,於各貫通孔11c,在表面11a的開口面積大於在背面11b的開口面積。 As shown in FIG. 9 , the Hengfan steel sheet 11 is etched using the resist mask 23 . The etching of the Hengfan steel sheet 11, for example, uses a ferric chloride solution. Thereby, a plurality of through-holes 11c , that is, mask openings, are formed in the constant-grade steel sheet 11 penetrating between the front surface 11a and the back surface 11b. In the cross section along the thickness direction of the steel sheet 11, the inner peripheral surface of each through hole 11c has a substantially arc shape, and the opening area on the front surface 11a of each through hole 11c is larger than the opening area on the back surface 11b.

由於恆範鋼薄片11的厚度是10μm以下,故即便是將恆範鋼薄片11僅從表面11a蝕刻,亦能將恆範鋼薄片11所具有的遮罩開口,換言之,可在未將貫通孔11c形成過大地形成貫通表面11a和背面11b之間的貫通孔11c。 Since the thickness of the Hengfan steel sheet 11 is 10 μm or less, even if the Hengfan steel sheet 11 is etched only from the surface 11a, the mask of the Hengfan steel sheet 11 can be opened. 11c forms a through-hole 11c which is formed too large to penetrate between the front surface 11a and the back surface 11b.

如圖所10示,恆範鋼薄片31的厚度T6比恆範鋼薄片11的厚度T1還大,亦即,恆範鋼薄片31的厚度T6大於10μm。於此情況,在要將恆範鋼薄片31的表面31a中的開口之面積作成與恆範鋼薄片11的表面11a中的開口之面積同程度並形成貫通表面31a與背面31b的貫通孔方面,有必要從表面31a與背面31b來蝕刻恆範鋼薄片31。 As shown in FIG. 10 , the thickness T6 of the constant steel sheet 31 is larger than the thickness T1 of the constant steel sheet 11 , that is, the thickness T6 of the constant steel sheet 31 is greater than 10 μm. In this case, in order to make the area of the opening in the surface 31a of the constant steel sheet 31 the same as the area of the opening in the surface 11a of the constant steel sheet 11, and to form a through hole penetrating the surface 31a and the back surface 31b, It is necessary to etch the constant steel sheet 31 from the surface 31a and the back surface 31b.

藉此,形成由開口於表面31a的第1孔31c和開口於背面31b的第2孔31d所構成之貫通孔31e。在和恆範鋼薄片31的厚度正交的方向,在第1孔31c和第2孔31d之連接部的開口面積小於在背面31b的第2孔31d的開口面積。 Thereby, the through-hole 31e which consists of the 1st hole 31c opened in the front surface 31a, and the 2nd hole 31d opened in the back surface 31b is formed. In the direction perpendicular to the thickness of the steel sheet 31, the opening area of the connecting portion of the first hole 31c and the second hole 31d is smaller than the opening area of the second hole 31d on the back surface 31b.

在具有這樣的貫通孔31e之恆範鋼薄片31被用作為蒸鍍用金屬遮罩之情況,在恆範鋼薄片31的背面31b是和成膜對象對向之狀態下,恆範鋼薄片31配置於蒸鍍源和成膜對象之間。因為恆範鋼薄片31中連接部形成從蒸鍍粒子觀看成膜對象時成為蒸鍍用金屬遮罩陰影的部分,所以光是該份量,難以在成膜對象中獲得追隨於第2孔31d中的遮罩開口的形狀之形狀。因此,第2孔31d的深度,換言之背面31b和連接部之間的距離小者更佳。 In the case where the constant-grade steel sheet 31 having such through holes 31e is used as a metal mask for vapor deposition, the constant-grade steel sheet 31 is in a state where the back surface 31b of the constant-grade steel sheet 31 faces the film-forming object. It is arranged between the vapor deposition source and the film formation target. Since the connection part of the constant-fan steel sheet 31 forms a part that is shadowed by the metal mask for vapor deposition when the film-forming object is viewed from the vapor-deposited particles, it is difficult to obtain the second hole 31d in the film-forming object with this amount alone. The shape of the mask opening. Therefore, the depth of the second hole 31d, in other words, the distance between the back surface 31b and the connecting portion is preferably smaller.

對此,依據恆範鋼薄片11的貫通孔11c,光是未具有連接部的份量,相較於上述的恆範鋼薄片31,可減少在從蒸鍍粒子觀看成膜對象時成為蒸鍍用金屬遮罩的陰影之部分。結果,可在成膜對象獲得更追隨於遮罩開口的形狀之形狀。 In this regard, according to the through-holes 11c of the Hengfan steel sheet 11, only the amount without a connecting portion can be reduced compared with the above-mentioned Hengfan steel sheet 31 when the film formation object is viewed from the vapor deposition particles. The shadow part of the metal mask. As a result, a shape that more closely follows the shape of the mask opening can be obtained in the film-forming object.

如圖11所示,將使用圖9先做了說明的阻劑遮罩23且是位在金屬遮罩用基材10上的阻劑遮罩23除去。此外,在將阻劑遮罩23從金屬遮罩用基材10與阻劑遮罩23的積層體除去時,亦可在支持層12當中之和恆範鋼薄片11相接的面的相反側之面上形成保護支持層12的保護層。依據保護層,可抑制因為用以除去阻劑遮罩23的溶液而溶解支持層12。 As shown in FIG. 11 , the resist mask 23 previously described using FIG. 9 and located on the metal mask substrate 10 is removed. In addition, when removing the resist mask 23 from the laminate of the metal mask base material 10 and the resist mask 23, it may be on the opposite side of the surface of the support layer 12 that is in contact with the constant steel sheet 11. A protective layer for protecting the support layer 12 is formed on the upper surface. According to the protective layer, dissolution of the support layer 12 due to the solution for removing the resist mask 23 can be suppressed.

如圖12所示,除去阻劑遮罩23後,將金屬遮罩用基材10暴露於鹼溶液,藉以從金屬遮罩用基材10將支持層12以化學方式除去。藉此,獲得蒸鍍用金屬遮罩薄片41。蒸鍍用金屬遮罩薄片41係具有和恆範鋼薄片11的表面11a相當之表面41a、和恆範鋼薄片11的背面11b相當之背面41b、及和恆範鋼薄片11的貫通孔11c相當之貫通孔41c。 As shown in FIG. 12 , after removing the resist mask 23 , the metal mask substrate 10 is exposed to an alkaline solution, thereby chemically removing the support layer 12 from the metal mask substrate 10 . Thereby, the metal mask sheet 41 for vapor deposition is obtained. The metal mask sheet 41 for vapor deposition has a surface 41 a corresponding to the surface 11 a of the constant steel sheet 11 , a back surface 41 b corresponding to the back surface 11 b of the constant steel sheet 11 , and a through hole 11 c of the constant steel sheet 11 . The through hole 41c.

此時,由於支持層12從金屬遮罩用基材10被以化學方式除去,所以相較於從恆範鋼薄片11將支持層12以物理方式剝下的情況,外力未作用於恆範鋼薄片11,在恆範鋼薄片11產生皺紋或變形之情況受到抑制。 At this time, since the support layer 12 is chemically removed from the metal mask base material 10 , external force does not act on the Hengfan steel sheet 11 compared to the case where the support layer 12 is physically peeled off from the Hengfan steel sheet 11 . As for the sheet 11, the occurrence of wrinkles or deformation of the Hengfan steel sheet 11 is suppressed.

鹼溶液只要是藉由溶解支持層12可將支持層12從恆範鋼薄片11剝離的溶液即可,例如為氫氧化鈉水溶液。在將金屬遮罩用基材10暴露於鹼溶液時,可將金屬遮罩用基材10浸泡於鹼溶液,亦可對金屬遮罩用基材10的支持層12噴吹鹼溶液,亦可對藉由旋轉器而旋轉的金屬遮罩用基材10的支持層12滴下鹼溶液。 The alkaline solution may be any solution as long as the support layer 12 can be peeled off from the Hengfan steel sheet 11 by dissolving the support layer 12 , for example, an aqueous sodium hydroxide solution. When exposing the metal mask substrate 10 to the alkaline solution, the metal mask substrate 10 may be immersed in the alkaline solution, or the support layer 12 of the metal mask substrate 10 may be sprayed with the alkaline solution, or An alkaline solution is dropped on the support layer 12 of the base material 10 for a metal mask which is rotated by a spinner.

如圖13所示,從蒸鍍用金屬遮罩薄片41切出具有既定長度的蒸鍍用金屬遮罩51。蒸鍍用金屬遮罩51係具有與蒸鍍用金屬遮罩薄片41的表面41a相當的表面51a、與蒸鍍用金屬遮罩薄片41的背面41b相當的背面51b、及與蒸鍍用金屬遮罩薄片41貫通孔41c相當的貫通孔51c。 As shown in FIG. 13 , a metal mask 51 for vapor deposition having a predetermined length is cut out from the metal mask sheet 41 for vapor deposition. The metal mask 51 for vapor deposition has a surface 51a corresponding to the surface 41a of the metal mask sheet 41 for vapor deposition, a back surface 51b corresponding to the back surface 41b of the metal mask sheet 41 for vapor deposition, and a metal mask for vapor deposition The cover sheet 41 is a through hole 51c corresponding to the through hole 41c.

而且,在進行有機層之蒸鍍時,將蒸鍍用金屬遮罩51貼附於框架。亦即,蒸鍍用金屬遮罩51係在藉由接著層53被貼附於於金屬製的框架52之狀態下被用在有機層的蒸鍍。蒸鍍用金屬遮罩51中,蒸鍍用金屬遮罩51的背面51b的一部份和框架52的一部份對向,接著層53位在蒸鍍用金屬遮罩51和框架52之間。此外,蒸鍍用金屬遮罩51亦可蒸鍍用金屬遮罩51的表面51a的一部份和框架52的一部份對向,且以接著層53位在蒸鍍用金屬遮罩51的表面51a和框架52之間的狀態下藉由接著層53貼附於框架52。 Furthermore, when vapor deposition of the organic layer is performed, the metal mask 51 for vapor deposition is attached to the frame. That is, the metal mask 51 for vapor deposition is used for vapor deposition of the organic layer in a state of being attached to the metal frame 52 via the adhesive layer 53 . In the metal mask 51 for vapor deposition, a part of the back surface 51b of the metal mask 51 for vapor deposition faces a part of the frame 52, and the next layer 53 is located between the metal mask 51 for vapor deposition and the frame 52 . In addition, a part of the surface 51a of the metal mask 51 for vapor deposition and a part of the frame 52 may be opposed to the metal mask 51 for vapor deposition, and the adhesive layer 53 may be located on the metal mask 51 for vapor deposition. The surface 51 a and the frame 52 are attached to the frame 52 through the adhesive layer 53 .

如圖14所示,在與蒸鍍用金屬遮罩51的表面51a對向之平面視圖中,蒸鍍用金屬遮罩51具有矩形狀,框架52具有矩形框狀。在與表面51a對向的平面視圖中,各貫通孔51c具有矩形狀。亦即,貫通孔51c中之表面51a的開口係具有矩形狀。此外,貫通孔51c中之在背面51b中的開口也具有矩形狀。複數個貫通孔51c係沿著1個方向以等間隔排列且沿著和1個方向正交之其他的方向以等間隔排列。蒸鍍用金屬遮罩51在蒸鍍用金屬遮罩51的背面51b是與成膜對象對向的狀態下配置在蒸鍍源和成膜對象之間。 As shown in FIG. 14 , in a plan view facing the surface 51 a of the metal mask for vapor deposition 51 , the metal mask for vapor deposition 51 has a rectangular shape, and the frame 52 has a rectangular frame shape. Each through hole 51c has a rectangular shape in a plan view facing the surface 51a. That is, the opening of the surface 51a in the through hole 51c has a rectangular shape. In addition, the opening in the back surface 51b among the through-holes 51c also has a rectangular shape. The plurality of through holes 51c are arranged at equal intervals along one direction and at equal intervals along the other direction orthogonal to one direction. The metal mask 51 for vapor deposition is arranged between the vapor deposition source and the object to be film-formed in a state where the back surface 51b of the metal mask for vapor-deposition 51 faces the object to be film-formed.

此外,圖14中,紙面的左右方向是成膜對象中畫素的排列方向。圖14中,在左右方向彼此相鄰的貫通孔51c間的距離小於在左右方向之貫通孔51c的寬度,但以在左右方向彼此相鄰的貫通孔51c間的距離係在左右方向之貫通孔51c的寬度的2倍以上者更佳。 In addition, in FIG. 14, the left-right direction of a paper surface is the arrangement|sequence direction of the pixel in a film formation object. In FIG. 14, the distance between the through-holes 51c adjacent to each other in the left-right direction is smaller than the width of the through-hole 51c in the left-right direction, but the distance between the through-holes 51c adjacent to each other in the left-right direction is the through-hole in the left-right direction More preferably, the width of 51c is more than 2 times.

[試驗例] [Test example]

參照圖15至圖20說明試驗例。 A test example will be described with reference to FIGS. 15 to 20 .

[試驗例1] [Test Example 1]

準備具有30μm的厚度之恆範鋼壓延薄片,設為試驗例1的恆範鋼壓延薄片。 A rolled sheet of Hengfan steel having a thickness of 30 μm was prepared and used as the rolled sheet of Hengfan steel of Test Example 1.

[試驗例2] [Test Example 2]

準備具有30μm的厚度之恆範鋼壓延薄片,對恆範鋼壓延薄片的表面噴吹酸性蝕刻液將恆範鋼壓延薄片的表面蝕刻3μm,獲得具有阻劑用處理面之試驗例2的恆範鋼薄片。此外,在酸性蝕刻液方面,使用對過氯酸鐵液和氯化鐵液之混合液混合了過氯酸的溶液。 Prepare a rolled sheet of Hengfan Steel with a thickness of 30 μm, spray an acid etchant on the surface of the rolled sheet of Hengfan Steel to etch the surface of the rolled sheet of Hengfan Steel by 3 μm, and obtain the Hengfan of Test Example 2 with a surface treated with a resist. Steel sheet. In addition, as the acidic etching solution, a solution in which perchloric acid was mixed with a mixed solution of a ferric perchlorate solution and a ferric chloride solution was used.

[試驗例3] [Test Example 3]

準備具有30μm的厚度之恆範鋼壓延薄片,以和試驗例2相同條件將恆範鋼壓延薄片的表面蝕刻4.5μm,獲得具有阻劑用處理面之試驗例3的恆範鋼薄片。 A Hengfan steel rolled sheet with a thickness of 30 μm was prepared, and the surface of the Hengfan steel rolled sheet was etched by 4.5 μm under the same conditions as in Test Example 2 to obtain a Hengfan steel sheet of Test Example 3 having a treated surface for resist.

[試驗例4] [Test Example 4]

準備具有30μm的厚度之恆範鋼壓延薄片,以和試驗例2相同條件將恆範鋼壓延薄片的表面蝕刻10μm,獲得具有阻劑用處理面之試驗例4的恆範鋼薄片。 A Hengfan steel rolled sheet with a thickness of 30 μm was prepared, and the surface of the Hengfan steel rolled sheet was etched by 10 μm under the same conditions as in Test Example 2 to obtain a Hengfan steel sheet of Test Example 4 having a treated surface for resist.

[利用掃描式電子顯微鏡之表面拍攝] [Surface shot with scanning electron microscope]

將試驗例1的表面及從試驗例2到試驗例4每一者中的阻劑用處理面利用掃描式電子顯微鏡拍攝而生成SEM畫像。將掃描式電子顯微鏡(JSM-7001F,日本電子(株式會社)製)中的倍率設成10000倍,加速電壓設成10.0kV,作動距離設成9.7mm。 The surface of Test Example 1 and the resist-treated surface in each of Test Examples 2 to 4 were photographed with a scanning electron microscope to generate SEM images. In a scanning electron microscope (JSM-7001F, manufactured by JEOL Ltd.), the magnification was 10,000 times, the acceleration voltage was 10.0 kV, and the operating distance was 9.7 mm.

如圖15所示,確認了在試驗例1的恆範鋼壓延薄片中之表面的平坦性最高,又,在試驗例1的恆範鋼壓延薄片的表面中,確認了在紙面上下方向延伸之條紋的壓延痕。如圖16及圖17所示,確認了在試驗例2的恆範鋼薄片中之阻劑用處理面和在試驗例3的恆範鋼薄片中之阻劑用處理面上形成階差。如圖18所示,確認了在試驗例4的恆範鋼薄片中之阻劑用處理面上,形成比在試驗例2的恆範鋼薄片中之阻劑用處理面及在試驗例3的恆範鋼薄片中之阻劑用處理面還大的階差。又,確認了在圖16至圖18的各恆範鋼薄片中之阻劑用處理面,壓延痕因為蝕刻而大致消失。 As shown in FIG. 15 , it was confirmed that the flatness of the surface of the rolled sheet of Hengfan steel of Test Example 1 was the highest, and it was confirmed that the surface of the rolled sheet of Hengfan steel of Test Example 1 extended in the vertical direction on the paper. Calender marks of stripes. As shown in FIG. 16 and FIG. 17 , it was confirmed that a level difference was formed between the resist-treated surface of the Hengfan steel sheet of Test Example 2 and the resist-treated surface of the Hengfan steel sheet of Test Example 3. As shown in FIG. 18 , it was confirmed that the resist-treated surface in the Hengfan steel sheet of Test Example 4 was more formed than the resist-treated surface of the Hengfan steel sheet of Test Example 2 and the surface of Test Example 3. The treated surface of the resist in the Hengfan steel sheet has a large level difference. In addition, it was confirmed that on the treated surface for the resist in each of the constant standard steel sheets shown in FIGS. 16 to 18 , the rolling marks were almost eliminated by etching.

[利用原子力顯微鏡測定表面粗糙度] [Measurement of Surface Roughness Using Atomic Force Microscope]

作成含有試驗例1的恆範鋼壓延薄片的表面之表面的試驗片,且作成含有試驗例2至試驗例4每一者之恆範鋼薄片的阻劑用處理面之表面的試驗片。然後,於各試驗片的表面,測定在具有一邊長5μm的正方形狀之區域、即掃描區域中的表面粗糙度。 A test piece containing the surface of the surface of the rolled sheet of Hengfan steel of Test Example 1 was prepared, and a test piece containing the surface of the resist treated surface of the Hengfan steel sheet of each of Test Examples 2 to 4 was prepared. Then, on the surface of each test piece, the surface roughness in the area having a square shape having a side length of 5 μm, that is, in the scanning area was measured.

使用原子力顯微鏡(AFM5400L,(株式會社)hitachi high-tech Science製)且以遵循JIS B 0601-2001的方法測定在各試驗例的表面中之表面粗糙度。表面粗糙度的測定結果係如以下的表1所示。又,依據測定結果將各試驗片中的表面積率以掃描區域的表面積對掃描區域的面積之比算出。換言之,表面積率係掃描區域的面積除以掃描區域的表面積之值。 The surface roughness on the surface of each test example was measured using an atomic force microscope (AFM5400L, manufactured by Hitachi High-tech Science Co., Ltd.) by a method in accordance with JIS B 0601-2001. The measurement results of the surface roughness are shown in Table 1 below. In addition, the surface area ratio in each test piece was calculated as the ratio of the surface area of the scanning area to the area of the scanning area based on the measurement results. In other words, the surface area ratio is the value of the area of the scan area divided by the surface area of the scan area.

此外,表1記載的表面粗糙度的參數中,Rz係屬於在具有基準長度的輪廓曲線中之最大的山之高度與最深的谷之深度的和的最大高度,Ra係具有基準長度的輪廓曲線之算術平均粗糙度。Rp係在具有基準長度的輪廓曲線之中最高的山之高度,Rv係在具有基準長度的輪廓曲線之中最深的谷之深度。又,以下,Rz、Ra、Rp及Rv各自的單位為μm。 In addition, among the parameters of the surface roughness described in Table 1, Rz is the maximum height of the sum of the height of the largest mountain and the depth of the deepest valley among the profile curves with the reference length, and Ra is the profile curve with the reference length. The arithmetic mean roughness. Rp is the height of the highest mountain among the profiles with the reference length, and Rv is the depth of the deepest valley among the profiles with the reference length. In addition, below, the unit of each of Rz, Ra, Rp, and Rv is micrometer.

Figure 107126029-A0101-12-0022-1
Figure 107126029-A0101-12-0022-1

如表1所示,就試驗例1的恆範鋼壓延薄片中的表面而言,確認了表面粗糙度Rz是0.17,表面粗糙度Ra是0.02,表面粗糙度Rp是0.08,表面粗糙度Rv是0.09。又,就試驗例1的恆範鋼壓延薄片中的表面而言,確認了表面積率是1.02。 As shown in Table 1, with regard to the surface of the rolled sheet of Hengfan Steel of Test Example 1, it was confirmed that the surface roughness Rz was 0.17, the surface roughness Ra was 0.02, the surface roughness Rp was 0.08, and the surface roughness Rv was 0.09. In addition, it was confirmed that the surface area ratio was 1.02 for the surface in the rolled sheet of Hengfan Steel of Test Example 1.

就試驗例2的恆範鋼薄片中的阻劑用處理面而言,確認了表面粗糙度Rz是0.24,表面粗糙度Ra是0.02,表面粗糙度Rp是0.12,表面粗糙度Rv是0.12。又,就試驗例2的恆範鋼薄片中的阻劑用處理面而言,確認了表面積率是1.23。 The surface roughness Rz was 0.24, the surface roughness Ra was 0.02, the surface roughness Rp was 0.12, and the surface roughness Rv was 0.12. In addition, it was confirmed that the surface area ratio of the treated surface for the resist in the Hengfan steel sheet of Test Example 2 was 1.23.

就試驗例3的恆範鋼薄片中的阻劑用處理面而言,確認了表面粗糙度Rz是0.28,表面粗糙度Ra是0.03,表面粗糙度Rp是0.15,表面粗糙度Rv是0.13。 又,就試驗例3的恆範鋼薄片中的阻劑用處理面而言,確認了表面積率是1.13。 The surface roughness Rz was 0.28, the surface roughness Ra was 0.03, the surface roughness Rp was 0.15, and the surface roughness Rv was 0.13. In addition, it was confirmed that the surface area ratio of the treated surface for the resist in the Hengfan steel sheet of Test Example 3 was 1.13.

就試驗例4的恆範鋼薄片中的阻劑用處理面而言,確認了表面粗糙度Rz是0.30,表面粗糙度Ra是0.03,表面粗糙度Rp是0.17,表面粗糙度Rv是0.13。又,就試驗例4的恆範鋼薄片中的阻劑用處理面而言,確認了表面積率是1.22。 The surface roughness Rz was 0.30, the surface roughness Ra was 0.03, the surface roughness Rp was 0.17, and the surface roughness Rv was 0.13. In addition, it was confirmed that the surface area ratio of the treated surface for the resist in the Hengfan steel sheet of Test Example 4 was 1.22.

如此,針對將恆範鋼壓延薄片的表面蝕刻3μm以上所獲得之恆範鋼薄片而言,確認了阻劑用處理面中的表面粗糙度Rz是0.2μm以上。又,確認了蝕刻的厚度越大,阻劑用處理面中的表面粗糙度Rz變越大,故而在恆範鋼壓延薄片的表面之蝕刻的厚度係4.5μm較佳,10μm更佳。 In this way, it was confirmed that the surface roughness Rz of the treated surface for the resist was 0.2 μm or more for the Hengfan steel sheet obtained by etching the surface of the Hengfan steel rolled sheet by 3 μm or more. Furthermore, it was confirmed that the larger the etching thickness, the larger the surface roughness Rz in the resist-treated surface. Therefore, the etching thickness on the surface of the rolled sheet of Hengfan steel is preferably 4.5 μm, more preferably 10 μm.

此外,準備具有30μm的厚度之恆範鋼壓延薄片,將恆範鋼壓延薄片的表面及背面各自以上述的條件各蝕刻10μm,藉以獲得具有10μm的厚度之恆範鋼薄片。此時,在從恆範鋼壓延薄片的背面所獲得之阻劑用處理面,貼附具有20μm的厚度之聚醯亞胺製的薄片作為支持層。 Furthermore, a rolled sheet of Hengfan steel having a thickness of 30 μm was prepared, and the surface and the back of the rolled sheet of Hengfan steel were each etched by 10 μm under the above-mentioned conditions, thereby obtaining a rolled sheet of Hengfan steel with a thickness of 10 μm. At this time, a sheet made of polyimide having a thickness of 20 μm was attached as a support layer to the treated surface for resists obtained from the back surface of the rolled sheet of Hengfan Steel.

依據這樣的恆範鋼薄片,本案發明者確認了從恆範鋼薄片的表面僅蝕刻恆範鋼薄片,可形成將恆範鋼薄片的表面和背面之間貫通的貫通孔,關於這樣的貫通孔,在恆範鋼薄片的表面之開口面積及在恆範鋼薄片的背面之開口面積分別具有所期望的大小亦為本案發明者們所確認。 Based on such a Hengfan steel sheet, the inventors of the present application confirmed that only the Hengfan steel sheet is etched from the surface of the Hengfan steel sheet, and a through hole penetrating between the surface and the back of the Hengfan steel sheet can be formed. It was also confirmed by the inventors of the present invention that the opening area on the surface of the constant-fan steel sheet and the opening area on the backside of the constant-fan steel sheet have desired sizes, respectively.

又,在試驗例1的恆範鋼壓延薄片的表面貼附乾膜阻劑,將乾膜阻劑圖案化後,蝕刻試驗例1的恆範鋼壓延薄片,於表面形成複數個凹部。 Moreover, after sticking a dry film resist on the surface of the rolled sheet of Hengfan Steel of Test Example 1, and patterning the dry film resist, the rolled sheet of Hengfan Steel of Test Example 1 was etched to form a plurality of recesses on the surface.

然後,在試驗例2至4的每一者的恆範鋼薄片之阻劑用處理面貼附乾膜阻劑,在將乾膜阻劑圖案化後,將試驗例2至4的每一者的恆範鋼薄片蝕刻,於阻劑用處理面形成複數個凹部。此外,試驗例2至4中,在乾膜阻劑的圖案化方法方面使用和試驗例1相同方法,又,將恆範鋼薄片的蝕刻條件設定成和試驗例1相同條件。 Then, a dry film resist was attached to the resist-treated surface of the Hengfan steel sheet of each of Test Examples 2 to 4, and after patterning the dry film resist, each of Test Examples 2 to 4 was The Hengfan steel sheet is etched to form a plurality of concave parts on the treated surface for resist. In addition, in Test Examples 2 to 4, the same method as that of Test Example 1 was used for the patterning method of the dry film resist, and the etching conditions of the Hengfan steel sheet were set to the same conditions as those of Test Example 1.

在試驗例2至4的每一者中,確認了在阻劑用處理面之開口的大小的不均比起在試驗例1的開口的大小的不均還小。亦即,如試驗例2至4的每一者,確認了若表面粗糙度Rz是0.2μm以上,則透過阻劑層和恆範鋼薄片之密接性提高使遮罩開口5中之形狀精度的降低受到抑制。 In each of Test Examples 2 to 4, it was confirmed that the variation in the size of the openings in the resist-treated surface was smaller than the variation in the size of the openings in Test Example 1. That is, as in each of Test Examples 2 to 4, it was confirmed that if the surface roughness Rz is 0.2 μm or more, the adhesion between the transmission resist layer and the constant-grade steel sheet is improved, and the shape accuracy in the mask opening 5 is improved. Decrease is suppressed.

[試驗例5] [Test Example 5]

準備具有30μm的厚度之恆範鋼壓延薄片,設為試驗例5的恆範鋼壓延薄片。 A rolled sheet of Hengfan steel having a thickness of 30 μm was prepared and used as the rolled sheet of Hengfan steel of Test Example 5.

[試驗例6] [Test Example 6]

準備具有30μm的厚度之恆範鋼壓延薄片,以和試驗例2相同條件將恆範鋼壓延薄片的表面蝕刻3μm,獲得具有阻劑用處理面之試驗例6的恆範鋼薄片。 A Hengfan steel rolled sheet with a thickness of 30 μm was prepared, and the surface of the Hengfan steel rolled sheet was etched by 3 μm under the same conditions as in Test Example 2 to obtain a Hengfan steel sheet of Test Example 6 having a treated surface for resist.

[試驗例7] [Test Example 7]

準備具有30μm的厚度之恆範鋼壓延薄片,以和試驗例2相同條件將恆範鋼壓延薄片的表面蝕刻10μm,獲得具有阻劑用處理面之試驗例7的恆範鋼薄片。 A Hengfan steel rolled sheet with a thickness of 30 μm was prepared, and the surface of the Hengfan steel rolled sheet was etched by 10 μm under the same conditions as in Test Example 2 to obtain a Hengfan steel sheet of Test Example 7 having a treated surface for resist.

[試驗例8] [Test Example 8]

準備具有30μm的厚度之恆範鋼壓延薄片,以和試驗例2相同條件將恆範鋼壓延薄片的表面蝕刻15μm,獲得具有阻劑用處理面之試驗例8的恆範鋼薄片。 A rolled Hengfan steel sheet with a thickness of 30 μm was prepared, and the surface of the rolled Hengfan steel sheet was etched by 15 μm under the same conditions as in Test Example 2 to obtain a Hengfan steel sheet of Test Example 8 having a treated surface for resist.

[試驗例9] [Test Example 9]

準備具有30μm的厚度之恆範鋼壓延薄片,以和試驗例2相同條件將恆範鋼壓延薄片的表面蝕刻16μm,獲得具有阻劑用處理面之試驗例9的恆範鋼薄片。 A Hengfan steel rolled sheet with a thickness of 30 μm was prepared, and the surface of the Hengfan steel rolled sheet was etched by 16 μm under the same conditions as in Test Example 2 to obtain a Hengfan steel sheet of Test Example 9 having a treated surface for resist.

[粒子痕之計數] [Count of particle marks]

作成含有試驗例5的恆範鋼壓延薄片的表面的一部份之表面的3個試驗片且具有一邊長為2mm的正方形狀之試驗片。又,作成含有試驗例6至試驗例9每一者的恆範鋼薄片的阻劑用處理面的一部份之表面的3個試驗片且具有一邊長度為2mm的正方形狀之試驗片。 Three test pieces including the surface of a part of the surface of the rolled sheet of Hengfan Steel of Test Example 5 and having a square shape with a side length of 2 mm were prepared. In addition, three test pieces including the surface of a part of the resist-treated surface of the Hengfan steel sheet of each of Test Examples 6 to 9 and having a square shape of 2 mm in length were prepared.

使用掃描式電子顯微鏡(同上)觀察各試驗片的表面,計數各試驗片所具有的粒子痕。此外,粒子痕係金屬氧化物的粒子從恆範鋼壓延薄片或者恆範鋼薄片脫離的痕跡,在各試驗片中,確認有第1粒子痕及第2粒子痕至少一方。計數粒子痕的結果係如以下的表2所示。 The surface of each test piece was observed using a scanning electron microscope (same as above), and the particle traces of each test piece were counted. In addition, the particle traces are traces of metal oxide particles detached from the Hengfan steel rolled sheet or the Hengfan steel sheet, and at least one of the first particle trace and the second particle trace was confirmed in each test piece. The results of counting particle traces are shown in Table 2 below.

如圖19所示,第1粒子痕係在與試驗片的表面對向的平面視圖中區劃略圓狀的區域且具有半球狀的凹陷。確認了第1粒子痕的徑係3μm以上且5μm以下。 As shown in FIG. 19 , the first particle traces are defined as a substantially circular region and have hemispherical depressions in a plan view facing the surface of the test piece. It was confirmed that the diameter of the first particle traces was 3 μm or more and 5 μm or less.

對此,如圖20所示,第2粒子痕係在與試驗片的表面對向的平面視圖中區劃略橢圓狀的區域且具有橢圓錘狀的凹陷。確認了第2粒子痕的長徑係3μm以上且5μm以下。 On the other hand, as shown in FIG. 20 , the second particle traces have a substantially elliptical region and have elliptical hammer-shaped depressions in a plan view facing the surface of the test piece. It was confirmed that the major axis of the second particle traces was 3 μm or more and 5 μm or less.

在拍攝第1粒子痕和第2粒子痕時,於掃描式電子顯微鏡中,將倍率設成5000倍,加速電壓設成10.0kV,作動距離設成9.7mm。 When imaging the 1st particle trace and the 2nd particle trace, in a scanning electron microscope, the magnification was set to 5000 times, the acceleration voltage was set to 10.0 kV, and the operating distance was set to 9.7 mm.

Figure 107126029-A0101-12-0026-2
Figure 107126029-A0101-12-0026-2

如表2所示,確認了在試驗例5,試驗片1具有1個第1粒子痕,確認了試驗片2及試驗片3都沒有粒子痕。亦即,確認了在試驗例5,第1粒子痕的合計是1個,第2粒子痕的合計是0個。 As shown in Table 2, in Test Example 5, it was confirmed that the test piece 1 had one first particle trace, and it was confirmed that neither the test piece 2 nor the test piece 3 had particle traces. That is, in Test Example 5, it was confirmed that the total of the first particle traces was one, and the total of the second particle traces was zero.

試驗例6中,確認了試驗片1有4個第1粒子痕和1個第2粒子痕,試驗片2有9個第1粒子痕,試驗例3有8個第1粒子痕和2個第2粒子痕。亦即,試驗例6中,確認了第1粒子痕的合計是21個,第2粒子痕的合計是3個。 In Test Example 6, it was confirmed that Test Piece 1 had four first particle traces and one second particle trace, Test Piece 2 had nine first particle traces, and Test Example 3 had eight first particle traces and two first particle traces. 2 particle marks. That is, in Test Example 6, it was confirmed that the total of the first particle traces was 21, and the total of the second particle traces was three.

試驗例7中,確認了試驗片1有5個第1粒子痕和1個第2粒子痕,試驗片2有6個第1粒子痕和1個第2粒子痕,試驗片3有5個第1粒子痕和2個第2粒子痕。亦即,確認了在試驗例7,第1粒子痕的合計是16個,第2粒子痕的合計是4個。 In Test Example 7, it was confirmed that the test piece 1 had five first particle traces and one second particle trace, the test piece 2 had six first particle traces and one second particle trace, and the test piece 3 had five first particle traces. 1 particle scar and 2 2nd particle scars. That is, in Test Example 7, it was confirmed that the total of the first particle traces was 16, and the total of the second particle traces was four.

試驗例8中,確認了試驗片1有5個第1粒子痕,試驗片2有2個第1粒子痕,試驗片3有6個第1粒子痕和1個第2粒子痕。亦即,確認了在試驗例8,第1粒子痕的合計是13個,第2粒子痕的合計是1個。 In Test Example 8, it was confirmed that the test piece 1 had five first particle traces, the test piece 2 had two first particle traces, and the test piece 3 had six first particle traces and one second particle trace. That is, in Test Example 8, it was confirmed that the total of the first particle traces was 13, and the total of the second particle traces was one.

試驗例9中,確認了試驗片1有4個第1粒子痕,試驗片2有5個第1粒子痕,試驗片3有5個第1粒子痕,另一方面,試驗片1到試驗片3全都沒有第2粒子痕。亦即,確認了在試驗例9,第1粒子痕的合計是14個。 In Test Example 9, it was confirmed that the test piece 1 had four first particle marks, the test piece 2 had five first particle marks, and the test piece 3 had five first particle marks. 3 There are no second particle marks at all. That is, in Test Example 9, it was confirmed that the total number of the first particle traces was 14.

又,確認了在具有複數個第2粒子痕之試驗例6及試驗例7中,各第2粒子痕的長徑方向對齊且長徑方向係和用以形成恆範鋼薄片的恆範鋼壓延薄片的壓延方向平行。 In addition, in Test Example 6 and Test Example 7 having a plurality of second particle traces, it was confirmed that the longitudinal direction of each second particle trace was aligned, and the longitudinal direction was the same as that of the constant-grade steel rolling used to form the constant-grade steel sheet. The calendering directions of the sheets are parallel.

如此,若將恆範鋼壓延薄片的表面蝕刻16μm以上,則可從恆範鋼薄片的阻劑用處理面去除第2粒子痕。又,確認了藉由將恆範鋼壓延薄片的表面蝕刻10μm以上,可減少第1粒子痕的數量,確認了藉由將恆範鋼壓延薄片的表面蝕刻15μm以上,可減少第1粒子痕的數量。 In this way, when the surface of the Hengfan steel rolled sheet is etched by 16 μm or more, the second particle traces can be removed from the resist treatment surface of the Hengfan steel sheet. In addition, it was confirmed that the number of the first particle marks could be reduced by etching the surface of the rolled sheet of Hengfan steel by 10 μm or more, and it was confirmed that the number of the first grain marks could be reduced by etching the surface of the rolled sheet of Hengfan steel by 15 μm or more. quantity.

從這樣的結果,可以說藉由將恆範鋼壓延薄片的表面蝕刻10μm以上,更佳為蝕刻15μm以上,可減少恆範鋼壓延薄片內的金屬氧化物之粒子。因此,對於依金屬遮罩用基材之蝕刻所形成的貫通孔之形狀的精度,在抑制金屬氧化物的脫離所產生的影響上,可說應將恆範鋼壓延薄片的表面蝕刻10μm以上,更佳為蝕刻15μm以上是有效的。 From these results, it can be said that by etching the surface of the Hengfan steel rolled sheet by 10 μm or more, more preferably 15 μm or more, the metal oxide particles in the Hengfan steel rolled sheet can be reduced. Therefore, it can be said that the surface of the rolled sheet of Hengfan steel should be etched by 10 μm or more for the accuracy of the shape of the through hole formed by the etching of the metal mask base material, in order to suppress the influence of the separation of the metal oxide. More preferably, it is effective to etch 15 μm or more.

如以上所說明,依據金屬遮罩用基材的製造方法、蒸鍍用金屬遮罩的製造方法、金屬遮罩用基材及蒸鍍用金屬遮罩的1個實施形態,可獲得以下列舉的效果。 As described above, according to one embodiment of the manufacturing method of the base material for metal mask, the manufacturing method of the metal mask for vapor deposition, the base material for metal mask, and the metal mask for vapor deposition, the following examples can be obtained. Effect.

(1)由於恆範鋼薄片11所具有的厚度是10μm以下,故可將形成於恆範鋼薄片11的遮罩開口之深度設為10μm以下。因此,從蒸鍍粒子看成膜對象時減少成為蒸鍍用金屬遮罩51的陰影的部分,亦即,因為 可抑制陰影效應,故而不僅在成膜對象可獲得追隨遮罩開口形狀的形狀,進而可謀求使用蒸鍍用金屬遮罩51之成膜的高精細化。 (1) Since the thickness of the constant steel sheet 11 is 10 μm or less, the depth of the mask opening formed in the constant steel sheet 11 can be set to 10 μm or less. Therefore, the shadow part of the metal mask 51 for vapor deposition can be reduced when viewed from the deposition particles, that is, the shadow effect can be suppressed, so that not only the shape of the deposition object can follow the shape of the mask opening, but also the shadow effect can be suppressed. Furthermore, the high definition of the film formation using the metal mask 51 for vapor deposition can be achieved.

而且,在恆範鋼薄片11形成遮罩開口時,阻劑層22和恆範鋼薄片11之密接性可比粗化前還要提高。而且,起因於阻劑層22從恆範鋼薄片11被剝下等所致形狀精度的降低,可於遮罩開口形成中抑制,所以關於這點可謀求使用蒸鍍用金屬遮罩51的成膜之高精細化。 In addition, when the mask opening is formed in the constant-grade steel sheet 11, the adhesion between the resist layer 22 and the constant-grade steel sheet 11 can be improved even more than before roughening. In addition, the reduction in shape accuracy caused by peeling off of the resist layer 22 from the steel sheet 11 can be suppressed during the formation of the mask opening. Therefore, in this regard, a formation using the metal mask 51 for vapor deposition can be achieved. High-definition film.

(2)不論是由恆範鋼壓延薄片21的表面21a形成的阻劑用處理面還是由恆範鋼壓延薄片21的背面21b形成的阻劑用處理面21c,對任一阻劑用處理面都可形成阻劑層22。因此,不僅可抑制因搞錯形成阻劑層22的對象的面而導致難以獲得阻劑層22和金屬遮罩用基材10之密接性,進而亦可抑制在製造蒸鍍用金屬遮罩51時良率降低。 (2) Regardless of whether it is the treated surface for resist formed by the surface 21a of the rolled sheet 21 of Hengfan Steel or the treated surface 21c for resist formed from the back 21b of the rolled sheet 21 of Hengfan Steel, for any treated surface for resist Both resist layers 22 may be formed. Therefore, it is possible not only to suppress the difficulty in obtaining the adhesion between the resist layer 22 and the metal mask base material 10 due to the wrong surface of the object for forming the resist layer 22 , but also to suppress the production of the metal mask 51 for vapor deposition. yield decreased.

(3)在恆範鋼薄片11的搬送或對恆範鋼薄片11進行後處理中,可減少起因於恆範鋼薄片11的厚度是10μm以下所致恆範鋼薄片11的脆弱性而而造成恆範鋼薄片11的處理麻煩。 (3) In the transport of the steel sheet 11 or the post-processing of the steel sheet 11, it is possible to reduce the fragility of the steel sheet 11 caused by the thickness of the steel sheet 11 being 10 μm or less. The handling of the Hengfan steel sheet 11 is troublesome.

(4)相較於從恆範鋼薄片11將支持層12以物理方式剝下的情況,由於外力未作用於恆範鋼薄片11,故在恆範鋼薄片11產生皺紋或變形之情況受到抑制。 (4) Compared with the case where the support layer 12 is physically peeled off from the Hengfan steel sheet 11, since the external force does not act on the Hengfan steel sheet 11, the occurrence of wrinkles or deformation in the Hengfan steel sheet 11 is suppressed. .

此外,上述的實施形態係可如以下那樣適宜地變更實施。 In addition, the above-mentioned embodiment can be suitably changed and implemented as follows.

支持層12亦可從恆範鋼薄片11以物理方式剝離。亦即,亦可在支持層12與恆範鋼薄片11的界面產生剝離的方式對支持層12和恆範鋼薄片11至少一方施加外力。即便是這樣的構成,若以阻劑用處理面的表面粗糙度Rz可成為0.2μm以上的方式進行粗化,且以蝕刻後的恆範鋼壓延薄片21中之厚度可成為10μm以下的方式蝕刻恆範鋼壓延薄片21,則可獲得和上述的(1)同等效果。 The support layer 12 can also be physically peeled off from the Hengfan steel sheet 11 . That is, external force may be applied to at least one of the support layer 12 and the constant steel sheet 11 so that peeling occurs at the interface between the support layer 12 and the constant steel sheet 11 . Even with such a configuration, roughening is performed so that the surface roughness Rz of the treated surface for resist becomes 0.2 μm or more, and etching is performed so that the thickness of the rolled steel sheet 21 after etching becomes 10 μm or less. The rolled sheet 21 of Hengfan Steel can obtain the same effect as the above-mentioned (1).

但是,如上述,在抑制恆範鋼薄片11的起皺或變形方面,支持層12係藉由鹼溶液從金屬遮罩用基材10以化學方式除去者更佳。 However, as described above, it is more preferable that the support layer 12 is chemically removed from the base material 10 for metal mask by an alkaline solution in terms of suppressing the wrinkle or deformation of the constant steel sheet 11 .

關於恆範鋼壓延薄片21的表面21a與背面21b之蝕刻,背面21b可比表面21a還先被蝕刻,亦可表面21a與背面21b同時被蝕刻。無關乎表面21a和背面21b被蝕刻的順序,若以阻劑用處理面的表面粗糙度Rz可成為0.2μm以上的方式進行粗化,且以蝕刻後的恆範鋼壓延薄片21中之厚度可成為10μm以下的方式蝕刻恆範鋼壓延薄片21,則可獲得和上述的(1)同等效果。 Regarding the etching of the surface 21a and the back surface 21b of the rolled sheet 21 of Hengfan Steel, the back surface 21b may be etched before the surface 21a, or the surface 21a and the back surface 21b may be etched simultaneously. Regardless of the order in which the front surface 21a and the back surface 21b are etched, roughening is performed so that the surface roughness Rz of the resist-treated surface can be 0.2 μm or more, and the thickness in the etched Hengfan steel rolled sheet 21 can be adjusted. When the rolled sheet 21 of Hengfan steel is etched so as to be 10 μm or less, the same effect as the above-mentioned (1) can be obtained.

恆範鋼壓延薄片21中的處理對象可以是僅恆範鋼壓延薄片21的表面21a,亦可為僅背面21b。即便是這樣的構成,若以阻劑用處理面的表面粗糙度Rz可成為0.2μm以上的方式進行粗化,且以蝕刻後的恆範鋼壓延薄片21中之厚度可成為10μm以下的方式蝕刻恆範鋼壓延薄片21,則可獲得和上述的(1)同等效果。 The processing object in the Hengfan Steel rolled sheet 21 may be only the surface 21a of the Hengfan Steel rolled sheet 21, or only the back surface 21b. Even with such a configuration, roughening is performed so that the surface roughness Rz of the treated surface for resist becomes 0.2 μm or more, and etching is performed so that the thickness of the rolled steel sheet 21 after etching becomes 10 μm or less. The rolled sheet 21 of Hengfan Steel can obtain the same effect as the above-mentioned (1).

在恆範鋼壓延薄片21中的處理對象僅為表面21a時,於表面21a蝕刻前,在背面21b積層支持層12,以恆範鋼壓延薄片21與支持層12層積的狀態下蝕刻表面21a者更佳。又,在處理對象僅為背面21b時,於背面21b蝕刻前,在表面21a形成支持層12,以恆範鋼壓延薄片21與支持層12層積的狀態下蝕刻背面21b者更佳。藉由這樣的構成,亦可獲得和上述的(3)同等效果。 When the processing object in the rolled sheet 21 of Hengfan Steel is only the surface 21a, before etching the surface 21a, a support layer 12 is laminated on the back surface 21b, and the surface 21a is etched in the state where the rolled sheet 21 of Hengfan Steel and the support layer 12 are laminated better. When the object to be processed is only the back surface 21b, the support layer 12 is formed on the front surface 21a before the back surface 21b is etched, and the back surface 21b is etched in a state where the rolled sheet 21 and the support layer 12 are stacked. Even with such a configuration, the same effect as the above-mentioned (3) can be obtained.

恆範鋼壓延薄片21中的處理對象之蝕刻為,不論處理對象是表面21a及背面21b中任一或是表面21a及背面21b雙方,亦可在對恆範鋼壓延薄片21未形成有支持層12的狀態下進行。即便是這樣的構成,若以阻劑用處理面的表面粗糙度Rz可成為0.2μm以上的方式進行粗化,且以蝕刻後的恆範鋼壓延薄片21中之厚度可成為10μm以下的方式蝕刻恆範鋼壓延薄片21,則可獲得和上述的(1)同等效果。 The etching of the processing object in the Hengfan steel rolled sheet 21 is that no matter whether the processing object is any one of the surface 21a and the back 21b or both the surface 21a and the back 21b, the Hengfan steel rolled sheet 21 may not be formed with a support layer. 12 in the state. Even with such a configuration, roughening is performed so that the surface roughness Rz of the treated surface for resist becomes 0.2 μm or more, and etching is performed so that the thickness of the rolled steel sheet 21 after etching becomes 10 μm or less. The rolled sheet 21 of Hengfan Steel can obtain the same effect as the above-mentioned (1).

於此情況,金屬遮罩用基材係未具有支持層12的構成,亦即,亦可僅具備恆範鋼薄片11的構成。或者,亦可在從恆範鋼壓延薄片21獲得恆範鋼薄片11後,對恆範鋼薄片11的1個面積層支持層12,藉以獲得恆範鋼薄片11與支持層12的積層體、即金屬遮罩用基材。 In this case, the base material for a metal mask does not have the structure of the support layer 12 , that is, it may only have the structure of the constant steel sheet 11 . Alternatively, after obtaining the Hengfan steel sheet 11 from the Hengfan steel rolling sheet 21, one area of the Hengfan steel sheet 11 can be layered with the support layer 12 to obtain a laminate of the Hengfan steel sheet 11 and the supporting layer 12, That is, the base material for metal mask.

如圖21所示,若支持層12的形成材料是聚醯亞胺,則從金屬遮罩用基材10除去支持層12時,亦可將支持層12當中之在金屬遮罩用基材10的厚度方 向的僅與恆範鋼薄片11所具有的貫通孔11c重合的部分從恆範鋼薄片11除去。換言之,亦可從金屬遮罩用基材10除去支持層12時,僅將與恆範鋼薄片11的背面11b對向之平面視圖中支持層12當中之支持層12的緣部且位在比所有貫通孔11c還外側的部分以外的部分除去。 As shown in FIG. 21 , if the forming material of the support layer 12 is polyimide, when the support layer 12 is removed from the base material 10 for a metal mask, one of the support layers 12 can also be placed in the base material 10 for a metal mask. Only the portion in the thickness direction that overlaps with the through hole 11 c of the constant steel sheet 11 is removed from the constant steel sheet 11 . In other words, when removing the support layer 12 from the base material 10 for metal mask, only the edge of the support layer 12 among the support layers 12 in the plan view opposite to the back surface 11b of the Hengfan steel sheet 11 may be All the through-holes 11c are removed except for the part outside.

在這樣的構成中,蒸鍍用金屬遮罩61係由恆範鋼薄片11和具有矩形框狀的聚醯亞胺框12a所構成。恆範鋼薄片11具有複數個貫通孔11c,聚醯亞胺框12a在與恆範鋼薄片11的背面11b對向的平面視圖中,係具有矩形框狀將所有的貫通孔11c包圍。 In such a configuration, the metal mask 61 for vapor deposition is composed of the steel sheet 11 and the polyimide frame 12a having a rectangular frame shape. The Hengfan steel sheet 11 has a plurality of through holes 11c, and the polyimide frame 12a has a rectangular frame shape enclosing all the through holes 11c in a plan view facing the back surface 11b of the Hengfan steel sheet 11.

蒸鍍用金屬遮罩61所具備的聚醯亞胺框12a係在蒸鍍用金屬遮罩61被安裝於框架52時可作為接著層發揮機能。因此,以蒸鍍用金屬遮罩61中的聚醯亞胺框12a接於框架52的狀態下使蒸鍍用金屬遮罩61被安裝於框架52。 The polyimide frame 12 a included in the metal mask 61 for vapor deposition can function as an adhesive layer when the metal mask 61 for vapor deposition is attached to the frame 52 . Therefore, the metal mask 61 for vapor deposition is attached to the frame 52 in a state where the polyimide frame 12a in the metal mask 61 for vapor deposition is in contact with the frame 52 .

如圖22所示,若支持層12的形成材料是聚醯亞胺,則支持層12亦可不被從金屬遮罩用基材10除去。在這樣的構成中,蒸鍍用金屬遮罩62在已貼附於框架52的時點係由具有複數個貫通孔11c的恆範鋼薄片11及和恆範鋼薄片11的背面11b整體重疊的支持層12所構成。 As shown in FIG. 22 , if the forming material of the support layer 12 is polyimide, the support layer 12 may not be removed from the base material 10 for metal masks. In such a configuration, the metal mask 62 for vapor deposition is supported by the constant steel sheet 11 having a plurality of through holes 11c and the back surface 11b of the constant steel sheet 11 when it is attached to the frame 52 as a whole. layer 12.

蒸鍍用金屬遮罩62所具備的支持層12係與上述的聚醯亞胺框12a同樣,在蒸鍍用金屬遮罩62被安裝於框架52時,可作為接著層發揮機能。因此,以蒸鍍用金屬遮罩62中的支持層12接於框架52的狀態使蒸鍍用金屬遮罩62被安裝於框架52。 The support layer 12 included in the metal mask 62 for vapor deposition is similar to the polyimide frame 12a described above, and functions as an adhesive layer when the metal mask 62 for vapor deposition is attached to the frame 52 . Therefore, the metal mask 62 for vapor deposition is attached to the frame 52 in a state where the support layer 12 in the metal mask 62 for vapor deposition is in contact with the frame 52 .

此外,就這樣的蒸鍍用金屬遮罩62而言,在蒸鍍用金屬遮罩62被安裝於框架52後,僅將支持層12當中之在金屬遮罩用基材10的厚度方向和恆範鋼薄片11所具有的貫通孔11c重疊的部分從恆範鋼薄片11除去即可。換言之,在與恆範鋼薄片11的背面11b對向的平面視圖中,亦可僅將支持層12當中是支持層12的緣部且位在比所有貫通孔11c外側的部分以外的部分除去。 In addition, in such a metal mask 62 for vapor deposition, after the metal mask 62 for vapor deposition is attached to the frame 52, only one of the support layers 12 in the thickness direction and constant direction of the base material 10 for metal mask is applied. What is necessary is just to remove the part where the through-hole 11c which the steel sheet 11 has the overlapped part is removed from the steel sheet 11 of the constant steel. In other words, in the plan view facing the back surface 11b of the steel sheet 11, only the portion of the support layer 12 that is the edge portion of the support layer 12 and is located outside of all the through holes 11c may be removed.

圖23係恆範鋼薄片的平面構造,表示藉由蝕刻恆範鋼壓延薄片21中之處理對象所獲得之與阻劑用處理面對向的平面視圖中之平面構造。此外,圖23中為使第1粒子痕及第2粒子痕與阻劑用處理面中其以外的部分之區別明確,在第1粒子痕及第2粒子痕附上圓點。 FIG. 23 is a plan view of the Hengfan steel sheet, showing the plane structure in a plan view facing the treatment surface for the resist obtained by etching the processing object in the Hengfan steel rolled sheet 21 . In addition, in FIG. 23, in order to clarify the distinction between the 1st particle traces and the 2nd particle traces and the parts other than those in the treated surface for resists, the circle|dots are attached to the 1st particle traces and the 2nd particle traces.

如圖23所示,若恆範鋼壓延薄片21的處理對象被蝕刻的厚度是3μm以上且10μm以下,則恆範鋼薄片71的阻劑用處理面71a具有複數個第1粒子痕72和複數個第2粒子痕73。各第1粒子痕72係為具有半球狀的凹陷,第1粒子痕72的直徑、即第1徑D1係3μm以上且5μm以下。 As shown in FIG. 23 , when the thickness of the processed object of the Hengfan steel rolled sheet 21 is 3 μm or more and 10 μm or less, the resist treatment surface 71 a of the Hengfan steel sheet 71 has a plurality of first particle traces 72 and a plurality of The second particle scar 73. Each of the first particle traces 72 has a hemispherical depression, and the diameter of the first particle traces 72 , that is, the first diameter D1 is 3 μm or more and 5 μm or less.

各第2粒子痕73係為具有橢圓錘狀的凹陷,第2粒子痕73的長徑、即第2徑D2係3μm以上且5μm以下,各第2粒子痕73的長徑方向是對齊。各第2粒子痕73的長徑方向係和恆範鋼薄片71的壓延方向平行的方向。 Each of the second particle traces 73 has an ellipsoid-shaped depression, the major axis of the second particle traces 73 , that is, the second diameter D2 is 3 μm or more and 5 μm or less, and the major axis directions of the second particle traces 73 are aligned. The longitudinal direction of each of the second particle traces 73 is a direction parallel to the rolling direction of the Hengfan steel sheet 71 .

恆範鋼薄片71係藉由一般壓延所製造,所以在恆範鋼薄片71的製造過程被添加之由脫氧劑等的氧化物構成的粒子混入於恆範鋼薄片71的情況不少。混入於恆範鋼薄片71的表面之粒子的一部份係在恆範鋼薄片71的壓延方向被延伸,具有在壓延方向具有長徑的橢圓錘狀。在阻劑用處理面71a中當這樣的粒子殘存於供形成遮罩開口的部位時,會有用以形成遮罩開口的蝕刻被粒子妨礙之虞。 Since the Hengfan steel sheet 71 is produced by general rolling, the Hengfan steel sheet 71 is often mixed with particles made of oxides such as a deoxidizer added during the manufacturing process of the Hengfan steel sheet 71 . Part of the particles mixed in the surface of the constant steel sheet 71 is extended in the rolling direction of the constant steel sheet 71, and has an elliptical hammer shape having a long diameter in the rolling direction. When such particles remain in the portion where the mask opening is to be formed on the resist-treated surface 71a, the etching for forming the mask opening may be hindered by the particles.

關於這點,依據上述的構成,可獲得以下的效果。 In this regard, according to the above-mentioned configuration, the following effects can be obtained.

(5)由於上述的粒子既從阻劑用處理面71a除去,故阻劑用處理面71a具有長徑方向對齊的橢圓錘狀之複數個第2粒子痕73。因此,在形成遮罩開口時,與恆範鋼薄片71中殘存粒子的情況相比,亦可提高遮罩開口的形狀或尺寸的精度。 (5) Since the above-mentioned particles are removed from the resist-treated surface 71a, the resist-treated surface 71a has a plurality of second particle scars 73 in the shape of an elliptical hammer aligned in the longitudinal direction. Therefore, when forming the mask opening, the accuracy of the shape or size of the mask opening can also be improved as compared with the case where particles remain in the constant steel sheet 71 .

金屬壓延薄片的形成材料,甚至金屬遮罩薄片及金屬薄片的形成材料若為純粹的金屬或合金,則亦可為恆範鋼以外的材料。 If the forming material of the metal rolled sheet, even the forming material of the metal mask sheet and the metal sheet is a pure metal or alloy, it can also be a material other than Hengfan steel.

蒸鍍用金屬遮罩51的製造方法中的各步驟係亦可對預先切斷成與1個蒸鍍用金屬遮罩51對應的大小之恆範鋼壓延薄片進行。於這樣的情況,藉由從與恆範鋼壓延薄片相當的恆範鋼薄片除去阻劑遮罩與支持層可獲得蒸鍍用遮罩。 Each step in the method of manufacturing the metal mask 51 for vapor deposition may be performed on a rolled sheet of constant steel that has been cut in advance into a size corresponding to one metal mask 51 for vapor deposition. In such a case, a mask for vapor deposition can be obtained by removing the resist mask and the support layer from the Hengfan steel sheet equivalent to the Hengfan steel rolled sheet.

或者,金屬遮罩用基材10的製造方法中的各步驟,亦可為對具有與複數個蒸鍍用金屬遮罩51對應 的大小之恆範鋼壓延薄片21進行,一方面,將所獲得之金屬遮罩用基材10切斷成具有與1個蒸鍍用金屬遮罩51對應的大小之金屬遮罩用基材片。而且,亦可對金屬遮罩用基材片進行形成阻劑層、形成阻劑遮罩、蝕刻恆範鋼薄片及除去支持層。 Alternatively, each step in the method for producing the base material 10 for metal mask may be performed on a rolled sheet 21 of constant standard steel having a size corresponding to a plurality of metal masks 51 for vapor deposition. On the one hand, the obtained The metal mask base material 10 is cut into a metal mask base material sheet having a size corresponding to one metal mask 51 for vapor deposition. Furthermore, the formation of the resist layer, the formation of the resist mask, the etching of the constant steel sheet, and the removal of the support layer may be performed on the base sheet for metal mask.

蒸鍍用金屬遮罩51在與表面51a對向的平面視圖中,可具有矩形狀以外的形狀,例如正方形狀,亦可具有四角形狀以外的多角形狀等之形狀。 The metal mask 51 for vapor deposition may have a shape other than a rectangular shape, for example, a square shape, or a polygonal shape other than a square shape in a plan view facing the surface 51a.

蒸鍍用金屬遮罩51的各貫通孔51c當中之在表面51a的開口及在背面51b的開口每一者,例如亦可具有正方形狀及圓形狀等的矩形狀以外之形狀。 Each of the openings on the front surface 51a and the openings on the back surface 51b among the through holes 51c of the metal mask 51 for vapor deposition may each have a shape other than a rectangular shape such as a square shape and a circular shape, for example.

在與表面51a對向的平面視圖中,在上述的1個方向是第1方向、且與第1方向正交的方向是第2方向時,複數個貫通孔51c亦可按照以下那樣排列。亦即,沿著第1方向的複數個貫通孔51c構成1行,於第1方向中,複數個貫通孔51c係以既定間距形成。而且,於構成各行的複數個貫通孔51c中,在第1方向中的位置是每隔1行相互重合。另一方面,在第2方向中彼此相鄰的行中,相對於構成一行的複數個貫通孔51c在第1方向的位置,構成另一行的複數個貫通孔51c在第1方向的位置是偏離1/2間距程度。換言之,複數個貫通孔51c亦可呈棋盤狀排列。 When the above-mentioned one direction is the first direction and the direction orthogonal to the first direction is the second direction in the plan view facing the surface 51a, the plurality of through holes 51c may be arranged as follows. That is, the plurality of through holes 51c along the first direction constitute one row, and in the first direction, the plurality of through holes 51c are formed at a predetermined pitch. Furthermore, among the plurality of through holes 51c constituting each row, the positions in the first direction overlap each other every other row. On the other hand, in the rows adjacent to each other in the second direction, the positions in the first direction of the plurality of through holes 51c constituting the other row are deviated from the positions in the first direction of the plurality of through holes 51c constituting one row. 1/2 pitch degree. In other words, the plurality of through holes 51c may also be arranged in a checkerboard shape.

總之,在蒸鍍用金屬遮罩51中,複數個貫通孔51c只要是以與使用蒸鍍用金屬遮罩51所形成之有機層的配置相對應的方式排列即可。此外,在實施形態 中,複數個貫通孔51c係以對應有機EL裝置中的格柵配列之方式排列,一方面,上述的變形例中的複數個貫通孔51c係以對應有機EL裝置中的三角形配列之方式排列。 In short, in the metal mask 51 for vapor deposition, the plurality of through holes 51c may be arranged so as to correspond to the arrangement of the organic layer formed using the metal mask 51 for vapor deposition. In addition, in the embodiment, the plurality of through holes 51c are arranged so as to correspond to the grid arrangement in the organic EL device. On the one hand, the plurality of through holes 51c in the above-mentioned modification example are arranged to correspond to the triangular shape in the organic EL device. Arranged by way of arrangement.

在與表面51a對向的平面視圖中,在上述的1個方向是第1方向、且與第1方向正交的方向是第2方向時,上述的實施形態中,各貫通孔51c係與在第1方向相鄰的其他的貫通孔51c及在第2方向相鄰的其他的貫通孔51c偏離。惟不限於此,各貫通孔51c的表面51a中的開口可在第1方向和在彼此相鄰的其他的貫通孔51c的表面51a中的開口相連,亦可在第2方向和在彼此相鄰的貫通孔51c的表面51a中開口相連。或者,各貫通孔51c的表面51a中的開口可在第1方向與第2方向雙方和在彼此相鄰的其他的貫通孔51c的表面51a中的開口相連。在這樣的蒸鍍用金屬遮罩中,2個貫通孔51c相連的部分之厚度亦可以比蒸鍍用金屬遮罩的外緣且不是貫通孔51c的位置的部分,即於形成貫通孔51c的步驟中未被蝕刻之部分的厚度還薄。 In the plan view facing the surface 51a, when the above-mentioned one direction is the first direction and the direction orthogonal to the first direction is the second direction, in the above-mentioned embodiment, each through hole 51c is connected to the The other through-holes 51c adjacent to each other in the first direction and the other through-holes 51c adjacent to the second direction are deviated from each other. But not limited to this, the opening in the surface 51a of each through-hole 51c may be connected to the opening in the surface 51a of the other through-holes 51c adjacent to each other in the first direction, or may be adjacent to each other in the second direction. The openings in the surface 51a of the through holes 51c are connected. Alternatively, the opening in the surface 51a of each through hole 51c may be connected to both the first direction and the second direction and the opening in the surface 51a of another through hole 51c adjacent to each other. In such a metal mask for vapor deposition, the thickness of the portion where the two through holes 51c are connected may be thicker than the portion of the outer edge of the metal mask for vapor deposition that is not the position of the through hole 51c, that is, the portion where the through hole 51c is formed. The thickness of the portion not etched in the step is still thin.

蒸鍍用金屬遮罩係不受限於在形成有機EL裝置的有機層時所用的蒸鍍用金屬遮罩,亦可以是在形成有機EL裝置以外的顯示裝置等之各種裝置所具備的配線之形成、或在形成各種裝置所具備的機能層等時所用的蒸鍍用金屬遮罩。 The metal mask for vapor deposition is not limited to the metal mask for vapor deposition used when forming the organic layer of the organic EL device, and may be one of wirings provided in various devices such as display devices other than the organic EL device. A metal mask for vapor deposition used for forming or forming functional layers included in various devices.

Claims (8)

一種金屬遮罩用基材的製造方法,包含:準備金屬壓延薄片,該金屬壓延薄片具備表面和背面,前述背面係與前述表面相反側的面,該金屬壓延薄片的前述表面及前述背面之至少一者是處理對象;及藉由將前述處理對象利用酸性蝕刻液蝕刻3μm以上,以成為具有0.2μm以上的表面粗糙度Rz之阻劑用處理面的方式將前述處理對象粗化,藉以獲得金屬製的金屬遮罩用薄片。 A method of manufacturing a base material for a metal mask, comprising: preparing a rolled metal sheet, the rolled metal sheet having a front surface and a back surface, the back surface being a surface opposite to the surface, and at least one of the surface and the back surface of the rolled metal sheet One is the treatment object; and by etching the treatment object with an acid etching solution of 3 μm or more, the treatment object is roughened so as to become a resist treatment surface having a surface roughness Rz of 0.2 μm or more, so as to obtain a metal Sheets made of metal masks. 如請求項1之金屬遮罩用基材的製造方法,其中前述處理對象係前述表面及前述背面雙方。 The method for producing a base material for a metal mask according to claim 1, wherein the object to be treated is both the front surface and the back surface. 如請求項1之金屬遮罩用基材的製造方法,其中前述處理對象係前述表面及前述背面之任一者,前述製造方法更包含在前述處理對象相反側的面積層樹脂製的支持層,在前述金屬壓延薄片和前述支持層層積的狀態下蝕刻前述處理對象,藉以獲得前述金屬遮罩用薄片和前述支持層積層而成之金屬遮罩用基材。 The method for manufacturing a base material for a metal mask according to claim 1, wherein the object to be treated is any one of the front surface and the back surface, and the manufacturing method further comprises layering a support layer made of resin on the area opposite to the object to be treated, The object to be processed is etched in a state where the rolled metal sheet and the support layer are laminated to obtain a base material for a metal mask in which the sheet for metal mask and the support layer are laminated. 如請求項2之金屬遮罩用基材的製造方法,其中前述蝕刻係包含蝕刻第1處理對象,和在之後,蝕刻第2處理對象,該第1處理對象為前述表面及前述背面的其中一者,該第2處理對象為前述表面及前述背面的另一者,前述製造方法係更包含在蝕刻前述第1處理對象後,在藉由前述第1處理對象之蝕刻所獲得之前述阻劑用 處理面積層樹脂製的支持層,在前述金屬壓延薄片和前述支持層層積的狀態下蝕刻前述第2處理對象,藉以獲得前述金屬遮罩用薄片和前述支持層積層而成之金屬遮罩用基材。 The method for manufacturing a base material for a metal mask according to claim 2, wherein the etching comprises etching a first object to be processed, and then, etching a second object to be processed, the first object being one of the front surface and the back surface Alternatively, the second treatment object is the other of the front surface and the back surface, and the manufacturing method further includes, after etching the first treatment object, using the resist obtained by etching the first treatment object Treat the support layer made of resin for the surface layer, and etch the second treatment object in the state where the metal rolled sheet and the support layer are stacked, so as to obtain the metal mask that the metal mask sheet and the support layer are laminated. substrate. 如請求項1之金屬遮罩用基材的製造方法,其中前述金屬壓延薄片是恆範鋼壓延薄片,前述金屬遮罩用薄片是恆範鋼製。 The method for producing a base material for a metal mask according to claim 1, wherein the rolled metal sheet is a rolled sheet of Hengfan steel, and the sheet for a metal mask is made of Hengfan steel. 如請求項1至5中任一項之金屬遮罩用基材的製造方法,其中前述阻劑用處理面具有粒子痕,前述粒子痕為具有橢圓錘狀的複數個凹陷,前述各粒子痕的長徑方向對齊。 The method for producing a base material for a metal mask according to any one of claims 1 to 5, wherein the treated surface for the resist has particle traces, the particle traces are a plurality of depressions having an elliptical hammer shape, and the Aligned in the longitudinal direction. 一種蒸鍍用金屬遮罩的製造方法,包含:形成具備至少1個阻劑用處理面的金屬遮罩用基材;在1個前述阻劑用處理面形成阻劑層;藉由將前述阻劑層圖案化而形成阻劑遮罩;及使用前述阻劑遮罩對前述金屬遮罩用基材進行蝕刻,使用如請求項1至6中任一項之金屬遮罩用基材的製造方法,形成前述金屬遮罩用基材。 A method for manufacturing a metal mask for vapor deposition, comprising: forming a base material for a metal mask having at least one treated surface for resist; forming a resist layer on one of the treated surfaces for resist; The resist layer is patterned to form a resist mask; and the above-mentioned resist mask is used to etch the aforementioned metal mask substrate, and the manufacturing method of the metal mask substrate according to any one of claims 1 to 6 is used. , forming the aforementioned base material for the metal mask. 如請求項7之蒸鍍用金屬遮罩的製造方法,其中前述金屬遮罩用基材係包含前述金屬遮罩用薄片和樹脂製的支持層之積層體,更包含藉由將已形成前述阻劑遮罩之後的前述金屬遮罩用基材暴露於鹼溶液而從前述金屬遮罩用基材將前述支持層以化學方式除去。 The method for producing a metal mask for vapor deposition as claimed in claim 7, wherein the base material for the metal mask is a laminate comprising the sheet for the metal mask and a resin-made support layer, and further comprises the above-mentioned resist The said support layer is chemically removed from the said base material for metal masks by exposing the said base material for metal masks after agent masking to an alkaline solution.
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