TWI784196B - Vapor deposition mask intermediate, vapor deposition mask, and manufacturing method of vapor deposition mask - Google Patents
Vapor deposition mask intermediate, vapor deposition mask, and manufacturing method of vapor deposition mask Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
Abstract
具備:帶狀部,具有跟隨蒸鍍遮罩的邊緣之形狀;框狀部,具備具有跟隨帶狀部的邊緣的形狀的內側緣並包圍帶狀部;以及複數個架橋部,將帶狀部的邊緣連接於框狀部的內側緣。帶狀部藉由切斷各架橋部而形成蒸鍍遮罩。在帶狀部的邊緣設有具有跟隨切口的底部之形狀的彎曲部,各架橋部係在帶狀部的邊緣中連接於彎曲部以外的部位。Possess: a belt-shaped part having a shape following the edge of the vapor deposition mask; a frame-shaped part having an inner edge having a shape following the edge of the belt-shaped part and surrounding the belt-shaped part; and a plurality of bridging parts connecting the belt-shaped part The edge is connected to the inner edge of the frame-shaped part. The strip-shaped part forms a vapor deposition mask by cutting off each bridging part. A curved portion having a shape following the bottom of the notch is provided on the edge of the strip-shaped portion, and each bridging portion is connected to a portion other than the curved portion in the edge of the strip-shaped portion.
Description
本發明係有關蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法。The present invention relates to a vapor deposition mask intermediate, a vapor deposition mask, and a method for manufacturing the vapor deposition mask.
蒸鍍遮罩具有具備表面及背面的矩形板狀。蒸鍍遮罩具有從表面貫通到背面的複數個貫通孔。各貫通孔具有在表面開口的第1開口及在背面開口的第2開口。各貫通孔係蒸鍍材料的通路。在使用蒸鍍遮罩朝對象物進行蒸鍍之際,蒸鍍材料係透過從第1開口進入貫通孔而在對象物上形成和第2開口的形狀及位置對應的圖案。為了抑制劃分貫通孔的壁面妨礙蒸鍍材料的通過,提案了具有50μm以下的厚度之蒸鍍遮罩(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻]The vapor deposition mask has a rectangular plate shape having a front surface and a back surface. The vapor deposition mask has a plurality of through holes penetrating from the front to the back. Each through-hole has a first opening opened on the front surface and a second opening opened on the back surface. Each through-hole is a passage of the vapor deposition material. When vapor deposition is performed on an object using the vapor deposition mask, the vapor deposition material enters the through hole from the first opening to form a pattern corresponding to the shape and position of the second opening on the object. A vapor deposition mask having a thickness of 50 μm or less has been proposed in order to prevent the wall surfaces defining the through holes from obstructing the passage of the vapor deposition material (see, for example, Patent Document 1). [Prior Art Literature] [Patent Document]
[專利文獻1]日本特許第6319505號[Patent Document 1] Japanese Patent No. 6319505
在使用蒸鍍遮罩時,蒸鍍遮罩被固定於支持框架。此時,蒸鍍遮罩係於被施加沿著蒸鍍遮罩的長邊方向之張力的狀態下被固定於框架。因為蒸鍍遮罩非常薄,所以在蒸鍍遮罩被固定於框架之際,有時會在蒸鍍遮罩發生因施加張力所致之皺褶或扭轉等之變形。故而要求在使用蒸鍍遮罩時可抑制蒸鍍遮罩之變形。When using a vapor deposition mask, the vapor deposition mask is fixed to the support frame. At this time, the vapor deposition mask is fixed to the frame in a state where tension is applied along the longitudinal direction of the vapor deposition mask. Since the vapor deposition mask is very thin, when the vapor deposition mask is fixed to the frame, deformation such as wrinkles or torsion due to tension may occur on the vapor deposition mask. Therefore, it is required that the deformation of the vapor deposition mask can be suppressed when the vapor deposition mask is used.
本發明之目的在於提供一種可抑制在使用蒸鍍遮罩時蒸鍍遮罩變形的蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法。An object of the present invention is to provide a vapor deposition mask intermediate, a vapor deposition mask, and a method for producing a vapor deposition mask capable of suppressing deformation of the vapor deposition mask when the vapor deposition mask is used.
用以解決上述課題之蒸鍍遮罩中間體為含有用以製造蒸鍍遮罩之金屬製的薄片。前述蒸鍍遮罩係具有被一對第1緣部與一對第2緣部包圍的帶狀,各第2緣部係比前述第1緣部短且具備切口,前述切口係具有往前述第1緣部延伸的方向、也就是長邊方向凹下的U字狀部分,前述U字狀部分的底部為曲線狀。前述蒸鍍遮罩中間體係具備:具有跟隨前述蒸鍍遮罩的邊緣之形狀的帶狀部;具備具有跟隨前述帶狀部的邊緣之形狀的內側緣並包圍前述帶狀部之框狀部;及將前述帶狀部的前述邊緣連接於前述框狀部的內側緣之複數個架橋部。前述帶狀部係藉由切斷各架橋部而形成前述蒸鍍遮罩,在前述帶狀部的前述邊緣設有具有跟隨前述切口的前述底部之形狀的彎曲部。各架橋部係在前述帶狀部的前述邊緣中連接於前述彎曲部以外的部位。The vapor deposition mask intermediate used to solve the above-mentioned problems is a thin sheet made of metal that is used to manufacture the vapor deposition mask. The vapor deposition mask has a belt shape surrounded by a pair of first edge portions and a pair of second edge portions, each second edge portion is shorter than the first edge portion and has a slit, and the above-mentioned slit has a direction toward the first edge portion. 1. A U-shaped part that is concave in the direction in which the edge extends, that is, the longitudinal direction, and the bottom of the U-shaped part is curved. The aforementioned vapor deposition mask intermediate system includes: a belt-shaped portion having a shape following the edge of the aforementioned evaporation mask; a frame-shaped portion having an inner edge having a shape following the edge of the aforementioned belt-shaped portion and surrounding the aforementioned belt-shaped portion; And a plurality of bridging portions connecting the aforementioned edge of the aforementioned strip-shaped portion to the inner edge of the aforementioned frame-shaped portion. The belt-shaped part is formed by cutting each bridging part to form the vapor deposition mask, and a curved part having a shape of the bottom following the cutout is provided on the edge of the belt-shaped part. Each bridging portion is connected to a portion other than the bending portion in the edge of the belt-shaped portion.
用以解決上述課題之蒸鍍遮罩係為含有金屬製的薄片之蒸鍍遮罩中間體的帶狀部之蒸鍍遮罩,前述蒸鍍遮罩中間體係具備被一對第1緣部與一對第2緣部包圍的帶狀部、包圍該帶狀部的框狀部、及連接於前述帶狀部和前述框狀部之複數個架橋部,且前述帶狀部係構成為從前述蒸鍍遮罩中間體藉由切斷前述架橋部而被卸下。各第2緣部係比前述第1緣部短且具備切口,前述切口係具有往前述第1緣部延伸的方向、也就是長邊方向凹下的U字狀部分,前述U字狀部分的底部為曲線狀。在前述蒸鍍遮罩的邊緣上設有屬於前述切口的前述底部的彎曲部。透過切斷前述架橋部而在前述蒸鍍遮罩的前述邊緣中的前述彎曲部以外的部位形成架橋痕跡。The vapor deposition mask used to solve the above-mentioned problems is a vapor deposition mask comprising a band-shaped portion of a metal sheet vapor deposition mask intermediate, and the vapor deposition mask intermediate system is provided with a pair of first edge portions and A strip-shaped portion surrounded by a pair of second edge portions, a frame-shaped portion surrounding the strip-shaped portion, and a plurality of bridging portions connected to the aforementioned strip-shaped portion and the aforementioned frame-shaped portion, and the aforementioned strip-shaped portion is configured from the aforementioned The vapor deposition mask intermediate is removed by cutting off the aforementioned bridging portion. Each second edge is shorter than the first edge and has a slit, and the notch has a U-shaped portion that is concave in the direction extending toward the first edge, that is, the longitudinal direction, and the U-shaped portion The bottom is curved. A curved portion belonging to the bottom of the cutout is provided on the edge of the vapor deposition mask. By cutting the bridging portion, bridging traces are formed on the edge of the vapor deposition mask other than the bent portion.
用以解決上述課題之蒸鍍遮罩的製造方法為製造蒸鍍遮罩,該蒸鍍遮罩具有被一對第1緣部與一對第2緣部包圍的帶狀,各第2緣部比前述第1緣部短且具備切口,前述切口係具有往前述第1緣部延伸的方向也就是長邊方向凹下的U字狀部分,前述U字狀部分的底部為曲線狀。該製造方法包含形成蒸鍍遮罩中間體、以及藉由切斷各架橋部而從前述帶狀部形成蒸鍍遮罩,該蒸鍍遮罩中間體係含有金屬製的薄片且具備:具有跟隨前述蒸鍍遮罩的邊緣之形狀的帶狀部;具有跟隨前述帶狀部的邊緣之內側緣並包圍前述帶狀部之框狀部;將前述帶狀部的前述邊緣連接於前述框狀部的前述內側緣之複數個架橋部;及藉由切斷各架橋部而從前述帶狀部形成蒸鍍遮罩。從前述帶狀部形成蒸鍍遮罩為,在前述帶狀部的前述邊緣設有具有跟隨前述切口的前述底部之形狀的彎曲部,且各架橋部係在前述帶狀部的前述邊緣中連接於前述彎曲部以外的部位。A method of manufacturing a vapor deposition mask for solving the above-mentioned problems is to manufacture a vapor deposition mask having a belt shape surrounded by a pair of first edge portions and a pair of second edge portions, each second edge portion It is shorter than the first edge and has a notch. The notch has a U-shaped portion that is concave in the direction extending toward the first edge, that is, the longitudinal direction. The bottom of the U-shaped portion is curved. The manufacturing method includes forming a vapor deposition mask intermediate body, and forming a vapor deposition mask from the strip-shaped portion by cutting each bridging portion, the vapor deposition mask intermediate system comprising a metal sheet and having: A belt-shaped portion in the shape of the edge of the vapor deposition mask; a frame-shaped portion having an inner edge following the edge of the belt-shaped portion and surrounding the belt-shaped portion; connecting the aforementioned edge of the belt-shaped portion to the frame-shaped portion a plurality of bridging portions of the inner edge; and forming a vapor deposition mask from the strip-shaped portion by cutting off each bridging portion. Forming the vapor deposition mask from the strip-shaped portion is that a curved portion having a shape of the bottom following the cutout is provided on the aforementioned edge of the strip-shaped portion, and each bridging portion is connected in the aforementioned edge of the aforementioned strip-shaped portion. in parts other than the above-mentioned curved part.
依據上述構成,從帶狀部形成的蒸鍍遮罩具備含有U字狀部分且U字狀部分的底部為曲線狀之切口。因此,在透過將各第2緣部中的切口的兩側以一對第2緣部往彼此分離的方向拉伸而將張力賦予蒸鍍遮罩的情況,作用於切口的力因切口所具有的形狀而被分散。藉此,於使用蒸鍍遮罩時,可抑制在蒸鍍遮罩發生皺摺或扭轉等之變形。According to the above configuration, the vapor deposition mask formed from the belt-shaped portion includes a U-shaped portion and has a cutout having a curved bottom. Therefore, when tension is applied to the vapor deposition mask by stretching both sides of the slit in each second edge in a direction away from each other with a pair of second edges, the force acting on the slit is due to the force of the slit. shape is dispersed. Thereby, when using a vapor deposition mask, deformation|transformation, such as a wrinkle and a twist, can be suppressed in a vapor deposition mask.
又,使帶狀部連接於框狀部的架橋部是在帶狀部的邊緣中被連接於彎曲部以外的部位。因此,於藉由架橋部之切斷所形成的蒸鍍遮罩中,在切口的彎曲部殘餘架橋部的一部份、欠缺彎曲部的一部份之情況會受到抑制。藉此,彎曲部的形狀被維持成可分散賦予蒸鍍遮罩的張力之形狀。因此,在使用蒸鍍遮罩時,可抑制在蒸鍍遮罩發生變形。Also, the bridging portion connecting the strip-shaped portion to the frame-shaped portion is a portion connected to the edge of the strip-shaped portion other than the bent portion. Therefore, in the vapor deposition mask formed by cutting the bridge part, it is suppressed that a part of the bridge part remains and a part of the bend part is missing in the bent part of the cutout. Thereby, the shape of the bent portion is maintained in a shape capable of distributing tension applied to the vapor deposition mask. Therefore, when the vapor deposition mask is used, deformation of the vapor deposition mask can be suppressed.
在上述蒸鍍遮罩中間體中,亦可為前述帶狀部的前述邊緣係包含前述一對第1緣部與前述一對第2緣部,前述帶狀部的各第2緣部係具有藉前述複數個架橋部連接於前述框狀部之連接部位。In the above-mentioned evaporation mask intermediate body, the aforementioned edge of the strip-shaped portion may include the pair of first edge portions and the pair of second edge portions, and each second edge portion of the aforementioned strip-shaped portion has a Connect to the connecting portion of the aforementioned frame-shaped portion by means of the plurality of bridging portions.
於製作蒸鍍遮罩中間體之際,在對蒸鍍遮罩中間體賦予沿著長邊方向的張力之狀態下搬送蒸鍍遮罩中間體。依據上述構成,因帶狀部的第2緣部是藉架橋部連接於框狀部,所以在製作蒸鍍遮罩中間體之際搬送蒸鍍遮罩中間體時,在帶狀部的長邊方向的兩端部被框狀部持續支持。藉此,即便沿著長邊方向的張力之大小在長邊方向的一端部與另一端部有參差不均的情況,亦可抑制帶狀部的變形。When producing the vapor deposition mask intermediate body, the vapor deposition mask intermediate body is conveyed in a state where tension along the longitudinal direction is applied to the vapor deposition mask intermediate body. According to the above-mentioned configuration, because the second edge of the strip-shaped portion is connected to the frame-shaped portion by the bridging portion, when the vapor-deposition mask intermediate is transported when the vapor-deposition mask intermediate is produced, the long side of the strip-shaped portion Both ends of the direction are continuously supported by the frame-shaped part. Thereby, even if the magnitude of the tension along the longitudinal direction varies between one end and the other end in the longitudinal direction, deformation of the belt-shaped portion can be suppressed.
在上述蒸鍍遮罩中間體中,亦可為前述帶狀部的各第2緣部係具備具有跟隨前述蒸鍍遮罩的前述切口之形狀的切口,前述帶狀部的各切口係被前述連接部位包夾。In the above-mentioned evaporation mask intermediate body, each second edge portion of the strip-shaped portion may be provided with a cutout having a shape following the aforementioned cutout of the aforementioned vapor-deposition mask, and each cutout of the aforementioned strip-shaped portion is covered by the aforementioned The connection part is double-teamed.
依據上述構成,切口的兩側藉架橋部連接於框狀部。因此,與僅切口的兩側中的一側是藉架橋部連接於框狀部的情況相比,於蒸鍍遮罩中間體之製作中蒸鍍遮罩中間體被沿著長邊方向搬送時,帶狀部被框狀部持續支持。又,與僅切口的兩側中的一側是藉架橋部連接於框狀部的情況相比,帶狀部難以相對於框狀部進行變位。因此,於蒸鍍遮罩中間體的製作中蒸鍍遮罩中間體被沿著長邊方向搬送時,藉由帶狀部例如接觸搬送機構等,可抑制帶狀部的一部份被折彎。According to the above configuration, both sides of the notch are connected to the frame-shaped portion by the bridge portion. Therefore, compared with the case where only one of the two sides of the slit is connected to the frame-shaped part through the bridging part, when the vapor deposition mask intermediate is conveyed along the longitudinal direction during the manufacture of the vapor deposition mask intermediate , the band is continuously supported by the frame. In addition, compared with the case where only one of the two sides of the notch is connected to the frame-shaped portion via the bridging portion, the belt-shaped portion is less likely to be displaced relative to the frame-shaped portion. Therefore, when the vapor deposition mask intermediate body is conveyed along the longitudinal direction during the production of the vapor deposition mask intermediate body, a part of the strip-shaped portion can be suppressed from being bent by using the strip-shaped portion, for example, by a contact conveyance mechanism. .
在上述蒸鍍遮罩中間體中,前述帶狀部的第2緣部係具備具有跟隨前述蒸鍍遮罩的前述切口之形狀的切口,前述框狀部的內側緣係具備具有跟隨前述帶狀部的前述切口之形狀的突狀緣,前述帶狀部的各切口包含前述彎曲部及從前述彎曲部往前述長邊方向延伸的一對直線部,各直線部亦可藉前述架橋部連接於前述突狀緣。In the above vapor deposition mask intermediate body, the second edge of the belt-shaped portion is provided with a notch having a shape following the aforementioned notch of the vapor deposition mask, and the inner edge of the aforementioned frame-shaped portion is provided with a shape following the aforementioned strip. The protruding edge in the shape of the aforementioned incision of the strip-shaped portion, each of the incisions of the aforementioned strip-shaped portion includes the aforementioned curved portion and a pair of straight lines extending from the aforementioned curved portion to the aforementioned longitudinal direction, and each straight line portion can also be connected to the The aforementioned protruding edge.
與帶狀部中的其他部分相比,帶狀部中包夾切口的部分係在和長邊方向正交的方向之寬度較小。依據上述構成,透過各直線部連接於突狀緣使得各直線部與突狀緣之剛性被提高。藉此,使帶狀部的變形受到抑制。而且,使突狀緣相對於帶狀部被折彎的情形受到抑制。結果,於搬送蒸鍍遮罩中間體時,可抑制帶狀部的一部份、突狀緣勾住搬送機構等的情形。The portion of the strip-shaped portion surrounding the cutout has a smaller width in the direction perpendicular to the longitudinal direction than other portions of the strip-shaped portion. According to the above structure, the rigidity between each straight portion and the protruding edge is improved by connecting each straight portion to the protruding edge. Thereby, deformation of the belt-shaped portion is suppressed. Furthermore, it is suppressed that the protruding edge is bent with respect to the strip-shaped part. As a result, when conveying the vapor deposition mask intermediate body, it is possible to suppress a part of the belt-shaped portion or the protruding edge from catching on the conveying mechanism or the like.
在上述蒸鍍遮罩中間體中,前述帶狀部的前述邊緣含有前述一對第1緣部及前述一對第2緣部,前述帶狀部的各第1緣部亦可藉前述複數個架橋部連接於前述框狀部。依據上述構成,於搬送蒸鍍遮罩中間體時,帶狀部的第1緣部被框狀部持續支持。因此,抑制各第1緣部被折彎,使帶狀部的變形受到抑制。In the above vapor deposition mask intermediate body, the aforementioned edge of the strip-shaped portion includes the aforementioned pair of first edge portions and the aforementioned pair of second edge portions, and each first edge portion of the aforementioned strip-shaped portion can also be formed by the aforementioned plurality of The bridging portion is connected to the aforementioned frame portion. According to the above configuration, when the vapor deposition mask intermediate is conveyed, the first edge of the strip-shaped portion is continuously supported by the frame-shaped portion. Therefore, each first edge portion is suppressed from being bent, and deformation of the belt-shaped portion is suppressed.
在上述蒸鍍遮罩中間體中,亦可前述帶狀部的各第2緣部係具有跟隨前述蒸鍍遮罩的前述切口之形狀,且具備含有前述彎曲部的切口,前述帶狀部的各第1緣部係於第1連接部位連接於前述框狀部,前述帶狀部的各第2緣部係於第2連接部位藉前述複數個架橋部連接於前述框狀部,與前述彎曲部相比,前述第1連接部位係於前述長邊方向位在靠近前述第2連接部位的位置。 In the above-mentioned vapor deposition mask intermediate body, each second edge portion of the strip-shaped portion may have a shape following the aforementioned incision of the vapor deposition mask, and may be provided with a notch including the aforementioned bent portion, and the strip-shaped portion may have a Each first edge portion is connected to the aforementioned frame-shaped portion at the first connecting position, and each second edge portion of the aforementioned belt-shaped portion is connected to the aforementioned frame-shaped portion at the second connecting position through the plurality of bridging portions. The first connection part is located closer to the second connection part in the longitudinal direction than the second connection part.
帶狀部中藉第1緣部及第2緣部所形成的角部與第2緣部的中央、第1緣部的中央相比,係容易從框狀部浮起。又,帶狀部中包夾切口的部分為,僅存在有切口的部分比其他部分的剛性低。依據上述構成,因為第1連接部位位在比彎曲部靠近第2連接部位的位置,所以帶狀部的角部相對於框狀部浮起的情形會受到抑制。因此,於蒸鍍遮罩中間體的製作中蒸鍍遮罩中間體被沿著長邊方向搬送時,可抑制角部勾住搬送機構等之情形。 The corner portion formed by the first edge portion and the second edge portion in the band-shaped portion is easier to float from the frame-shaped portion than the center of the second edge portion and the center of the first edge portion. In addition, the portion of the belt-shaped portion that sandwiches the notch has lower rigidity than the other portions. According to the above configuration, since the first connecting portion is located closer to the second connecting portion than the bent portion, the corner portion of the band-shaped portion is suppressed from floating with respect to the frame-shaped portion. Therefore, when the vapor deposition mask intermediate body is transported along the longitudinal direction during production of the vapor deposition mask intermediate body, it is possible to suppress the corners from being caught by the transport mechanism or the like.
在上述蒸鍍遮罩中間體中,前述帶狀部係包含含有複數個貫通孔的遮罩部,前述帶狀部的各第1緣部亦可於前述長邊方向上在不與前述遮罩部重疊的部位藉前述架橋部連接於前述框狀部。 In the above-mentioned evaporation mask intermediate body, the strip-shaped portion includes a mask portion including a plurality of through holes, and each first edge of the strip-shaped portion can also be positioned in the longitudinal direction without being connected to the mask. The portion where the parts overlap is connected to the aforementioned frame-shaped portion by the aforementioned bridging portion.
依據上述構成,與在長邊方向中架橋部與遮罩部排列的情況相比,於蒸鍍遮罩中間體之製作中蒸鍍遮罩中間體被沿著長邊方向搬送時,通過架橋部作用於遮罩部的力可被緩和。故可抑制遮罩部所具有的貫通孔之變形。 According to the above configuration, compared with the case where the bridging portion and the mask portion are aligned in the longitudinal direction, when the vapor deposition mask intermediate is transported along the longitudinal direction in the production of the vapor deposition mask intermediate, the bridging portion The force acting on the mask portion can be relaxed. Therefore, deformation of the through hole included in the mask portion can be suppressed.
在上述蒸鍍遮罩中間體中,亦可為前述框狀部具備脆弱部,該脆弱部具有沿著從前述框狀部的前述內側緣朝向前述框狀部的外側緣的方向延伸的線狀,前述脆弱部的機械強度係比前述框狀部中的前述脆弱部以外的部分之機械強度低。 In the above-mentioned vapor deposition mask intermediate body, the frame-shaped portion may be provided with a weakened portion having a linear shape extending in a direction from the inner edge of the frame-shaped portion toward the outer edge of the frame-shaped portion. The mechanical strength of the fragile portion is lower than the mechanical strength of the frame-shaped portion other than the fragile portion.
依據上述構成,因為脆弱部的機械強度比框狀部中的脆弱部以外的部分之機械強度還低,所以框狀部容易沿著脆弱部被切斷。而且,因為脆弱部中的一端部是位在框狀部的內側緣,所以在從框狀部卸下帶狀部之際可切斷內側緣所形的環。藉此,變得容易進行架橋部之切斷。According to the above configuration, since the mechanical strength of the fragile portion is lower than that of the frame-shaped portion other than the fragile portion, the frame-shaped portion is easily cut along the fragile portion. Moreover, since one end of the fragile portion is located on the inner edge of the frame, the ring formed by the inner edge can be cut when the strip is removed from the frame. Thereby, it becomes easy to cut|disconnect a bridge|bridging part.
依據本發明,可抑制在蒸鍍遮罩之使用時的蒸鍍遮罩變形。According to the present invention, deformation of the vapor deposition mask during use of the vapor deposition mask can be suppressed.
參照圖1至圖16來說明蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩之製造方法的一實施形態。以下,依序說明蒸鍍遮罩中間體的構成、遮罩裝置的構成、及蒸鍍遮罩的製造方法。An embodiment of a vapor deposition mask intermediate, a vapor deposition mask, and a method of manufacturing a vapor deposition mask will be described with reference to FIGS. 1 to 16 . Hereinafter, the configuration of the vapor deposition mask intermediate, the configuration of the mask device, and the manufacturing method of the vapor deposition mask will be sequentially described.
[蒸鍍遮罩中間體之構成]
參照圖1至圖13來說明蒸鍍遮罩中間體之構成。
圖1所示的蒸鍍遮罩中間體10係用以製造蒸鍍遮罩的金屬板、亦即金屬薄片。如圖1所示,蒸鍍遮罩中間體10具有往長邊方向延伸的帶狀。於製造蒸鍍遮罩時,蒸鍍遮罩中間體10係沿著長邊方向被搬送輥等之搬送機構所搬送。蒸鍍遮罩具有被一對第1緣部與一對第2緣部所包圍的帶狀。各第2緣部比第1緣部短且具備切口。該切口具有往第1緣部延伸的方向、也就是往長邊方向凹下的U字狀部分,U字狀部分的底部為曲線。第1緣部延伸的長邊方向係與蒸鍍遮罩中間體10的長邊方向、也就是與搬送方向平行。[Composition of Evaporation Mask Intermediate]
The configuration of the vapor deposition mask intermediate will be described with reference to FIGS. 1 to 13 .
The vapor deposition mask
如圖1所示,蒸鍍遮罩中間體10具備帶狀部11、框狀部12、及複數個架橋部13。帶狀部11具有跟隨蒸鍍遮罩的邊緣之形狀。帶狀部11的邊緣11E由一對第1緣部11L與一對第2緣部11W所構成。框狀部12具有跟隨帶狀部11的邊緣11E之內側緣12E包圍著帶狀部11。架橋部13將帶狀部11的邊緣11E連接於框狀部12的內側緣12E。帶狀部11係藉由切斷各架橋部13而形成蒸鍍遮罩。帶狀部11的各第2緣部11W具備切口11N。切口11N具有跟隨蒸鍍遮罩的切口之U字狀部分,U字狀部分的底部為曲線。切口11N的邊緣係具有跟隨蒸鍍遮罩的切口之形狀的凹狀緣。內側緣12E具備具有跟隨切口11N之形狀的突狀緣12E1。切口11N包含跟隨蒸鍍遮罩所具有的切口的底部之彎曲部11N1。各架橋部13係在帶狀部11的邊緣11E中連接於彎曲部11N1以外的部位。As shown in FIG. 1 , the vapor deposition mask
依據此蒸鍍遮罩中間體10,從帶狀部11形成的蒸鍍遮罩具備具有U字狀部分且U字狀部分的底部為曲線的切口。因此,在透過將各第2緣部中的切口的兩側往一對第2緣部從彼此分離的方向拉伸而將張力賦予蒸鍍遮罩之情況,作用於切口的力因切口所具有的形狀而被分散。藉此,於蒸鍍遮罩的使用時,可抑制在蒸鍍遮罩發生起皺或扭轉等之變形。According to this vapor deposition mask
又,將帶狀部11連接於框狀部12的架橋部13是在帶狀部11的邊緣11E中連接於彎曲部11N1以外的部位。因此,於藉由架橋部13之切斷所形成的蒸鍍遮罩中,在切口的彎曲部殘留有架橋部13的一部份、欠缺彎曲部的一部份之情況會受到抑制。藉此,彎曲部的形狀被維持成可分散賦予蒸鍍遮罩的張力之形狀。因此,於蒸鍍遮罩的使用時,可抑制在蒸鍍遮罩發生變形。In addition, the bridging
帶狀部11含有複數個遮罩部11M。在各遮罩部11M形成複數個貫通帶狀部11的貫通孔。複數個遮罩部11M係沿著長邊方向DL隔著間隔地排列著。此外,圖1所示的帶狀部11雖含有3個遮罩部11M,但各帶狀部11所含有的遮罩部11M之個數可任意變更成1以上的個數。The belt-shaped
帶狀部11的邊緣11E係由含有藉架橋部13連接於框狀部12的連接部位的架橋區域R13及不含有有該連接部位的非架橋區域RN所構成。在圖1所示的帶狀部11,為了明確區別架橋區域R13與非架橋區域RN,沿著架橋區域R13附帶有點。The
架橋區域R13係由一對第1緣部11L、各第2緣部11W中的切口11N以外的區域、及各切口11N中的彎曲部11N1以外的區域所構成。架橋區域R13所包含的各區域具有沿著長邊方向DL延伸的形狀,或者具有沿著寬度方向DW延伸的形狀。寬度方向DW係與長邊方向DL正交的方向。非架橋區域RN由各彎曲部11N1所構成。各彎曲部11N1係都沒有沿著長邊方向DL延伸的形狀與沿著寬度方向DW延伸的形狀任一者的區域。The bridging region R13 is constituted by a pair of
複數個架橋部13可沿著架橋區域R13存在。各架橋部13將架橋區域R13的一部份連接於框狀部12。此外,圖1中,為了方便列舉可供架橋部13配置的位置,以虛線表示架橋部13。A plurality of bridging
圖2顯示第2緣部11W所具有的切口11N的形狀中的2個例。圖2(a)顯示切口11N的第1例,圖2(b)顯示切口11N的第2例。FIG. 2 shows two examples of the shape of the
如圖2(a)所示,在切口11N的第1例中,切口11N是由彎曲部11N1及從彎曲部11N1往長邊方向DL延伸的一對直線部11N2所構成。各直線部11N2往長邊方向DL延伸,且一對直線部11N2係於寬度方向DW隔著間隔地排列。彎曲部11N1具有在從含有該彎曲部11N1的切口11N朝著其他切口11N的方向變凹的圓弧狀。在切口11N的第1例中,一對直線部11N2被架橋區域R13所包含。相對地,彎曲部11N1被非架橋區域RN所包含。As shown in FIG. 2( a ), in the first example of the
如圖2(b)所示,切口11N的第2例係具有大致拋物線狀。切口11N的第2例係由一對曲線部11N3所構成。一對曲線部11N3係具有通過切口11N的底部且相對於往長邊方向DL延伸的直線彼此對稱的形狀。各曲線部11N3係沿著和長邊方向DL交叉的方向延伸著。在切口11N的第2例中,切口11N的整體為彎曲部。因此,切口11N的整體被非架橋區域RN所包含。As shown in FIG. 2( b ), the second example of the
圖3中,蒸鍍遮罩中間體10中的1個架橋部13與藉該架橋部13所連接的帶狀部11的一部份及框狀部12的一部份被放大顯示。此外,圖3顯示將帶狀部11的邊緣11E中沿著寬度方向DW延伸的區域的一部份連接於框狀部12的架橋部13。In FIG. 3 , one bridging
如圖3(a)所示,架橋部13具有從框狀部12橫亙到帶狀部11延伸的形狀。本實施形態中,架橋部13具有矩形狀。此外,架橋部13的形狀只要為從框狀部12橫亙到帶狀部11延伸的形狀,則可變更為矩形狀以外的任意形狀。帶狀部11的邊緣11E具有架橋用凹口11ED。在1個架橋用凹口11ED連接有1個架橋部13。在架橋用凹口11ED內,於寬度方向DW的架橋部13的兩側,在架橋部13與帶狀部11之間形成有間隙。架橋用凹口11ED係矩形狀的凹口。架橋用凹口11ED的形狀不受限於矩形狀,例如亦可為圓弧狀。As shown in FIG. 3( a ), the bridging
架橋部13中,連接於帶狀部11的端部為基端部,連接於框狀部12的端部為前端部。基端部具有機械強度是比前端部還低的脆弱部13A。脆弱部13A係例如為在寬度方向DW之基端部的一部份被施以半蝕刻加工的部位。脆弱部13A被半蝕刻加工的複數個部位亦可為沿著基端部隔著間隔排列的部位。此外,架橋部13亦可未具有脆弱部13A。In the bridging
在寬度方向DW中之架橋用凹口11ED的寬度例如為1mm以上3mm以下。在長邊方向DL中之架橋用凹口11ED的寬度例如為0.1mm以上0.3mm以下。架橋部13的厚度係與加工前的金屬薄片且為用以形成蒸鍍遮罩中間體的金屬薄片的厚度相等。在寬度方向DW中之架橋部13的寬度例如設定成相對於寬度方向DW的架橋用凹口11ED的寬度為70%以上80%以下。The width of the bridging notch 11ED in the width direction DW is, for example, not less than 1 mm and not more than 3 mm. The width of the bridging notch 11ED in the longitudinal direction DL is, for example, 0.1 mm or more and 0.3 mm or less. The thickness of the bridging
在圖3(a)所示的例子中,架橋部13的脆弱部13A是由1個半蝕刻部所構成。半蝕刻部係在架橋部13中被半蝕刻加工的部位。在此情況,寬度方向DW的脆弱部13A的寬度例如設定成相對於寬度方向DW的架橋部13的寬度為50%以上80%以下。長邊方向DL的脆弱部13A的寬度例如設定成相對於長邊方向DL的架橋用凹口11ED的寬度為25%以上50%以下。In the example shown in FIG. 3( a ), the
在因為架橋部13具有脆弱部13A而透過架橋部13之折彎將架橋部13切斷的情況,與架橋部13未具有脆弱部13A的情況相比,切斷架橋部13是容易的。又,因為容易切斷架橋部13,故難以在經切斷架橋部13的痕跡、也就是在切斷痕跡的形狀發生參差不均。又,因架橋部13在基端部具有脆弱部13A,使得架橋部13的一部份變得難以殘留於蒸鍍遮罩。因此,於沿著蒸鍍遮罩的長邊方向對蒸鍍遮罩施加張力的情況,變得難以以蒸鍍遮罩中的架橋部13的殘留部份為基點而在蒸鍍遮罩上產生皺褶或扭轉等之變形。When the bridging
又,在因為脆弱部13A位在架橋用凹口11ED內且藉架橋部13之折彎而切斷架橋部13之情況,架橋部13的殘留部份比起蒸鍍遮罩的邊緣中的殘留部份以外的其他部分還突出於外側的情況會受到抑制。又,藉由脆弱部13A位在架橋用凹口11ED內,於搬送蒸鍍遮罩中間體10時,脆弱部13A在邊緣11E中被劃分架橋用凹口11ED的區域從外部保護。藉此,於搬送蒸鍍遮罩中間體10時,可抑制架橋部13從帶狀部11被切斷。Also, in the case where the bridging
此外,如圖3(b)所示,帶狀部11的邊緣11E亦可不具有架橋用凹口11ED。在此情況,架橋部13係連接於是帶狀部11的邊緣11E且具有沿著寬度方向DW延伸的形狀的部分。又,脆弱部13B亦可具有沿著寬度方向DW排列的複數個貫通孔。Moreover, as shown in FIG.3(b), the
再者,如圖3(c)所示,脆弱部13C亦可具有複數個貫通孔13C1及複數個半蝕刻部13C2。在此情況,於脆弱部13C中,貫通孔13C1和半蝕刻部13C2是在寬度方向DW交互地排列。Furthermore, as shown in FIG. 3( c ), the
此外,即便是帶狀部11的邊緣11E具有架橋用凹口11ED的情況,脆弱部亦可具有複數個貫通孔,於脆弱部中,貫通孔和半蝕刻部交互排列亦可。又,即便是帶狀部11的邊緣11E未具有架橋用凹口11ED的情況,脆弱部亦可由1個半蝕刻部所構成。又,脆弱部具備複數個半蝕刻部,亦可複數個半蝕刻部是沿著脆弱部延伸的方向隔著間隔排列。In addition, even in the case where the
圖4顯示蒸鍍遮罩中間體10的沿著和表面正交的平面且是沿著長邊方向DL延伸的平面之遮罩部11M的剖面構造。圖4(a)顯示遮罩部11M的第1例中的剖面構造。圖4(b)顯示遮罩部11M的第2例中的剖面構造。FIG. 4 shows a cross-sectional structure of a
如圖4(a)所示,蒸鍍遮罩中間體10具備表面10F及和表面10F相反側的面、也就是背面10R。表面10F係在蒸鍍遮罩被安裝於蒸鍍裝置的狀態下面對蒸鍍裝置的蒸鍍源。背面10R係在蒸鍍遮罩被安裝於蒸鍍裝置的狀態下面對玻璃基板等之蒸鍍對象。遮罩部11M具有貫通蒸鍍遮罩中間體10的複數個貫通孔11H。貫通孔11H的壁面係相對於蒸鍍遮罩中間體10的厚度方向在剖面視圖中具有傾斜。貫通孔11H的壁面的形狀係於剖面視圖中朝貫通孔11H的外側突出的半圓弧狀。此外,貫通孔11H的壁面的形狀係亦可為在剖面視圖中具有複數個彎曲點之複雜的曲線狀。As shown in FIG. 4( a ), the vapor deposition mask
遮罩部11M的厚度例如為15μm以下。因為遮罩部11M的厚度為15μm以下,所以可將形成於遮罩部11M的貫通孔11H深度設為15μm以下。如此一來,若是薄的蒸鍍遮罩中間體10,則可將貫通孔11H所具有的壁面的面積本身縮小,又,由於蒸鍍遮罩中間體10的厚度薄,故蒸鍍物質在貫通孔11H內飛行的距離短。藉此,可減少附著於貫通孔11H的壁面之蒸鍍物質的量。此外,蒸鍍遮罩中間體10中,在遮罩部11M以外的部分之厚度例如為25μm以下。蒸鍍遮罩中間體10中,在遮罩部11M以外的部分之厚度係和加工前的金屬薄片、亦即形成有帶狀部11、框狀部12、及架橋部13之前的金屬薄片的厚度相等。The thickness of the
表面10F包含是貫通孔11H的開口之第1開口H1。背面10R包含是貫通孔11H的開口之第2開口H2。第1開口H1係於面對表面10F的俯視圖中比第2開口H2還大。各貫通孔11H係供從蒸鍍源昇華的蒸鍍物質通過的通路。從蒸鍍源昇華的蒸鍍物質係從第1開口H1朝第2開口H2前進。貫通孔11H中,因為第1開口H1比第2開口H2還大,所以可增加從第1開口H1進入貫通孔11H的蒸鍍物質的量。此外,在沿著表面10F的剖面之貫通孔11H的面積係亦可從第2開口H2朝向第1開口H1,從第2開口H2到第1開口H1單調地增大,亦可具備在從第2開口H2到第1開口H1為止的途中大致成為一定的部位。The
如圖4(b)所示,第1開口H1係於面對表面10F的俯視圖中比第2開口H2還大。貫通孔11H係由具有第1開口H1的大孔11LH及具有第2開口H2的小孔11SH所構成。大孔11LH的剖面積係從第1開口H1朝向背面10R單調地減少。小孔11SH的剖面積係從第2開口H2朝向表面10F單調地減少。貫通孔11H的壁面係於剖面視圖中供大孔11LH與小孔11SH連接的部位,亦即,在蒸鍍遮罩中間體10的厚度方向的中間具有朝貫通孔11H的內側突出的形狀。在貫通孔11H的壁面突出的部位與背面10R之間的距離係階高(step hight)SH。As shown in FIG. 4( b ), the first opening H1 is larger than the second opening H2 in plan view of the facing
此外,在遮罩部11M的第1例中,階高SH是零。就確保會到達第2開口H2的蒸鍍物質之量的觀點而言,較佳為階高SH是零。在帶狀部11具備遮罩部11M的第1例之情況,加工前的金屬薄片之厚度係薄到藉由將金屬薄片從單面進行濕蝕刻而形成貫通孔11H的程度。加工前的金屬薄片之厚度,如上述般,例如為25μm以下。此外,在帶狀部11具備遮罩部11M的第2例之情況,遮罩部11M的厚度例如為25μm以下。又,在此情況,加工前的金屬薄片的厚度例如為50μm以下。In addition, in the first example of the
[蒸鍍遮罩中間體的例子]
以下,參照圖5至圖13來說明有關蒸鍍遮罩中間體10的9個例子。在蒸鍍遮罩中間體10的9個例中,在帶狀部11的邊緣11E中,藉架橋部13連接於框狀部12的區域是互異。此外,於各例的蒸鍍遮罩中間體10中,帶狀部11具備切口11N的第1例。然而,在以下說明之蒸鍍遮罩中間體10的第1例(參照圖5)、第2例(參照圖6)及第4例至第6例(參照圖8至圖10)、及第9例(參照圖13)中,帶狀部11亦可具備第2例的切口11N。[Example of vapor deposition mask intermediate]
Next, nine examples of the vapor deposition mask
[第1例]
如圖5所示,帶狀部11的各第2緣部11W藉複數個架橋部13連接於框狀部12。於製作蒸鍍遮罩中間體10之際,在對蒸鍍遮罩中間體10賦予沿著長邊方向DL的張力的狀態下搬送蒸鍍遮罩中間體10。本例中,帶狀部11的第2緣部11W藉架橋部13連接於框狀部12。因此,於製作蒸鍍遮罩中間體10之際搬送蒸鍍遮罩中間體10時,帶狀部11中之長邊方向DL的兩端部是被框狀部12持續支持。藉此,即便沿著長邊方向DL的張力之大小在長邊方向DL的一端部和另一端部有參差不均的情況,亦可抑制帶狀部11的變形。[Example 1]
As shown in FIG. 5 , each
特別是,若為帶狀部11的第2緣部11W是被框狀部12持續支持的構成,則於搬送蒸鍍遮罩中間體10時會抑制第2緣部11W被折彎或捲曲的情形,使得帶狀部11的變形受到抑制。In particular, if the
帶狀部11的各切口11N係在第2緣部11W延伸的方向被架橋部13所連接的連接部位包夾。藉此,寬度方向DW中的切口11N的兩側是藉由架橋部13連接於框狀部12。因此,與僅寬度方向DW中的切口11N的兩側中的一側是藉由架橋部13連接於框狀部12的情況相比,於搬送蒸鍍遮罩中間體10時,帶狀部11被框狀部12持續支持。又,與僅在寬度方向DW的切口11N的兩側中的一側是藉由架橋部13連接於框狀部12的情況相比,帶狀部11難以相對於框狀部12進行變位。因此,於搬送蒸鍍遮罩中間體10時,帶狀部11藉由例如接觸搬送機構等,而抑制帶狀部11的一部份被折彎。Each
於寬度方向DW,切口11N係被一對第2緣要素包夾。各第2緣要素沿著寬度方向DW延伸。於各第2緣部11W中,連接部位係位在各第2緣要素而沒有位在切口11N的直線部11N2。In the width direction DW, the
較佳為,在寬度方向DW中的切口11N的兩側分別存在有複數個連接部位。與連接部位為1個的情況相比,抑制緣部11W折彎的效果變得容易以第2緣部11W的整體來獲得。再者,以在寬度方向DW中的切口11N的兩側分別存在有複數個且相同數目的連接部位較佳。藉此,與在寬度方向DW中的切口11N的兩側之帶狀部11被框狀部12所支持的部位之數目互異的情況相比,可抑制在1個連接部位中所支持的荷重之偏差。因此,荷重之偏差在寬度方向DW中的切口11N的兩側產生互異的變形之情況會受到抑制。Preferably, there are a plurality of connection locations on both sides of the
於寬度方向DW中的切口11N的兩側,複數個連接部位較佳為隔著相等間隔地存在。藉此,在連接部位的密度比其他部分還低的部分,第2緣部11W撓曲的情況會受到抑制。On both sides of the
連接於一對第2緣部11W當中的一第2緣部11W之複數個架橋部13構成第1架橋部群,連接於另一第2緣部11W之複數個架橋部13構成第2架橋部群。於寬度方向DW,屬於第1架橋部群的各架橋部13的位置較佳為和屬於第2架橋部群的1個架橋部13的位置相等。藉此,與寬度方向DW中之連接部位的數目、位置在一對第2緣部11W中互異的情況相比,可抑制在1個連接部位所支持的荷重之偏差。因此,荷重之偏差在一對第2緣部11W中產生互異的變形之情況會受到抑制。A plurality of bridging
[第2例]
如圖6所示,在蒸鍍遮罩中間體10的第2例中,各第1緣部11L不僅藉由各第2緣部11W,亦藉由複數個架橋部13連接於框狀部12。因此,抑制於搬送蒸鍍遮罩中間體10時各第1緣部11L被折彎,使帶狀部11的變形受到抑制。被連接於各第1緣部11L的複數個架橋部13較佳為含有在長邊方向DL隔著相等間隔地存在的架橋部13。藉此,在第1緣部11L中撓曲的程度是依彼此相鄰的架橋部13間之區域而異的情況會受到抑制。結果,於搬送蒸鍍遮罩中間體10時,在沿著長邊方向DL對蒸鍍遮罩中間體10施加一定的張力之情況,蒸鍍遮罩中間體10的形狀在長邊方向DL有不均一的情況會受到抑制。[Example 2]
As shown in FIG. 6, in the second example of the vapor deposition mask
一對第1緣部11L較佳為相互藉同數目的架橋部13連接於框狀部12。連接於一對第1緣部11L當中的一第1緣部11L的複數個架橋部13構成第1架橋部群,連接於另一第1緣部11L的複數個架橋部13構成第2架橋部群。長邊方向DL中,屬於第1架橋部群的各架橋部13的位置較佳為和屬於第2架橋部群的1個架橋部13的位置相等。藉此,與長邊方向DL中之連接部位的數目、位置在一對第1緣部11L中互異的情況相比,可抑制在1個連接部位中所支持的荷重之偏差。因此,荷重之偏差在一對第1緣部11L中產生互異的變形之情況會受到抑制。The pair of
第1架橋部群及第2架橋部群分別較佳為包含在長邊方向DL中位在比各切口11N的底部還靠近連接著含有該切口11N的第2緣部11W的端部之架橋部13。亦即,帶狀部11的各第1緣部11L係於第1連接部位被連接於框狀部12,帶狀部11的各第2緣部11W係於第2連接部位被連接於框狀部。較佳為,第1連接部位係於長邊方向DL位在比彎曲部11N1還靠近第2連接部位的位置。換言之,第1連接部位較佳為在長邊方向DL中位在比彎曲部11N1還外側。The first bridging portion group and the second bridging portion group are preferably respectively included in the bridging portion located closer to the end of the
帶狀部11中藉第2緣部11W及第1緣部11L所形成的角部與第2緣部11W的中央、第1緣部11L的中央相比,容易從框狀部12浮起。又,帶狀部11中包夾切口11N的部分為,僅存在有切口11N的部分比其他部分的剛性低。若是第1緣部11L在比切口11N的底部還靠近端部的位置被連接於框狀部12的構成,則可抑制藉第2緣部11W及第1緣部11L所形成的角部相對於框狀部12折彎的情形。因此,於搬送蒸鍍遮罩中間體10時,可抑制發生角部勾住搬送機構等之情形。The corner portion formed by the
換言之,因為第1連接部位是位在比彎曲部11N1還靠第2連接部位的位置,所以帶狀部11的角部相對於框狀部12浮起的情形會受到抑制。因此,於蒸鍍遮罩中間體10的製作中蒸鍍遮罩中間體10被沿著長邊方向DL搬送時,可抑制角部勾住搬送機構等的情形。In other words, since the first connection point is located closer to the second connection point than the bent portion 11N1 , the corners of the strip-shaped
各第1緣部11L係於長邊方向DL中不與遮罩部11M重疊的部位藉架橋部13連接於框狀部12。長邊方向DL中彼此相鄰的遮罩部11M間之區域為非蒸鍍區域。第1緣部11L所含有的連接部位係被包含於沿著寬度方向DW延長非蒸鍍區域的區域。因此,與架橋部13和遮罩部11M在長邊方向DL排列的情況相比,於搬送蒸鍍遮罩中間體10時,通過架橋部13作用於遮罩部11M的作用力被緩和。因此,使遮罩部11M所具有的貫通孔11H的變形受到抑制。Each
[第3例]
如圖7所示,在蒸鍍遮罩中間體10的第3例中,各切口11N不僅藉由一對第2緣部11W及一對第1緣部11L,亦藉由架橋部13連接於框狀部12。各切口11N中,各直線部11N2藉架橋部13連接於進到切口11N的框狀部12的突狀緣12E1。與帶狀部11中的其他部分相比,帶狀部11中包夾切口11N的部分在和長邊方向DL正交的方向的寬度較小。藉由各直線部11N2連接於框狀部12,各直線部11N2與突狀緣12E1之剛性被提高,以抑制各直線部11N2相對於框狀部12被折彎。藉此,使帶狀部11的變形受到抑制。而且,框狀部12的內側緣12E的突狀緣12E1相對於帶狀部11折彎的情形會受到抑制。藉此,於搬送蒸鍍遮罩中間體10時,可抑制框狀部12的一部份勾住搬送機構等的情形。[Example 3]
As shown in FIG. 7 , in the third example of the vapor deposition mask
各直線部11N2較佳為含有複數個連接部位。與連接部位為1個的情況相比,能獲得抑制各直線部11N2折彎的效果之區域在直線部11N2被擴張。各直線部11N2中之複數個連接部位較佳為在長邊方向DL隔著相等間隔地排列。藉此,在直線部11N2中撓曲的程度依彼此相鄰的連接部位間之區域而異的情況會受到抑制。Each linear portion 11N2 preferably includes a plurality of connection locations. Compared with the case where there is only one connecting portion, the area capable of obtaining the effect of suppressing bending of each straight portion 11N2 is expanded in the straight portion 11N2. It is preferable that a plurality of connection sites in each linear portion 11N2 are arranged at equal intervals in the longitudinal direction DL. Thereby, the degree of bending in the linear portion 11N2 is suppressed from being different depending on the area between the adjacent connection portions.
一對直線部11N2較佳為相互藉由同數目的架橋部13連接於框狀部12。連接於一對直線部11N2當中的一直線部11N2的複數個架橋部13構成第1架橋部群,連接於另一直線部11N2的複數個架橋部13構成第2架橋部群。寬度方向DW中,屬於第1架橋部群的各架橋部13的位置較佳為和屬於第2架橋部群的1個架橋部13的位置相等。藉此,與長邊方向DL中直線部11N2被框狀部12所支持的部位之數目或位置在一對直線部11N2中互異的情況相比,可抑制在1個連接部位中所支持的荷重之偏差。因此,荷重之偏差在一對直線部11N2中產生互異的變形之情況會受到抑制。The pair of linear portions 11N2 are preferably connected to the
各第1緣部11L在長邊方向DL比各切口11N的底部還靠近連接著含有該切口11N的第2緣部11W的端部未有連接部位。就本例而言,各切口11N中,因為一對直線部11N2連接於框狀部12,所以可省略各第1緣部11L中位在比各切口11N的底部還靠近連接著含有含有該切口11N的第2緣部11W的端部之連接部位。如此,依據直線部11N2所含有的連接部位,1個連接部位在框狀部12的內側緣12E中可進行抑制跟隨切口11N的區域折彎及支持在帶狀部11中的端部。Each
第2緣部11W含有於寬度方向DW包夾切口11N的一對第2緣要素。各直線部11N2中的連接部位之每單位長度的個數、也就是密度係以比各第2緣要素中之連接部位的密度還高者較佳。The
[第4例]
如圖8所示,在蒸鍍遮罩中間體10的第4例中,一對第1緣部11L不僅藉由一對第2緣部11W,亦藉由架橋部13連接於框狀部12。各第1緣部11L係在長邊方向DL中比彎曲部11N1還靠近連接著含有該彎曲部11N1的第2緣部11W的端部藉由架橋部13連接於框狀部12。[Case 4]
As shown in FIG. 8 , in the fourth example of the vapor deposition mask
較佳為,各第1緣部11L藉由複數個架橋部13連接於框狀部12,且複數個架橋部13係位在長邊方向DL中比彎曲部11N1還靠近連接著含有該彎曲部11N1的第2緣部11W的端部。藉此,在長邊方向DL的帶狀部11的荷重可藉由偏向各第1緣部11L的端存在的複數個架橋部13來支持。因此,可省略長邊方向DL中位在被一對切口11N包夾的區域之架橋部13。因此,於搬送蒸鍍遮罩中間體10時,外力通過架橋部13作用於遮罩部11M的情形會受到抑制。結果,可抑制遮罩部11M所具有的貫通孔11H之變形。Preferably, each
此外,透過各第1緣部11L是在長邊方向DL中比彎曲部11N1還靠近連接著含有該彎曲部11N1的第2緣部11W的端部被連接於框狀部12,與蒸鍍遮罩中間體10的第2例同樣,藉第2緣部11W及第1緣部11L所形成的角部相對於框狀部12浮起的情形會受到抑制。In addition, since each
各第1緣部11L較佳為藉由同數目的架橋部13連接於框狀部12。連接於一對第1緣部11L中的一第1緣部11L的複數個架橋部13構成第1架橋部群,連接於另一第1緣部11L的複數個架橋部13構成第2架橋部群。長邊方向DL中,屬於第1架橋部群的各架橋部13的位置較佳為和屬於第2架橋部群的1個架橋部13的位置相等。藉此,與在長邊方向DL中被框狀部12所支持的部位之數目、位置在一對第1緣部11L中互異的情況相比,可抑制在1個連接部位中所支持的荷重之偏差。因此,荷重之偏差在一對第1緣部11L中產生互異的變形之情況會受到抑制。Each
[第5例]
如圖9所示,在蒸鍍遮罩中間體10的第5例中,帶狀部11僅在一對第1緣部11L中藉由架橋部13連接於框狀部12。各第1緣部11L係在長邊方向DL中比彎曲部11N1還靠近連接有含有該彎曲部11N1的第2緣部11W之端處具有連接部位。各第1緣部11L進一步於長邊方向DL中和彎曲部11N1重疊位置亦含有連接部位。[Example 5]
As shown in FIG. 9 , in the fifth example of the vapor deposition mask
如此,各第1緣部11L係於從切口11N的底部到連接著含有該切口11N的第2緣部11W的端部為止之間,藉由複數個架橋部13連接於框狀部12。藉此,在長邊方向DL及寬度方向DW的帶狀部11之荷重可藉由偏向各第1緣部11L的端部存在的複數個架橋部13來支持。因此,就本例而言,可省略長邊方向DL中位在被一對切口11N包夾的區域之架橋部13。因此,於搬送蒸鍍遮罩中間體10時,外力通過架橋部13作用於遮罩部11M的情形會受到抑制。結果,可抑制遮罩部11M所具有的貫通孔11H之變形。Thus, each
此外,透過各第1緣部11L是在長邊方向DL中比彎曲部11N1還靠近連接著含有該彎曲部11N1的第2緣部11W的端部被連接於框狀部12,與蒸鍍遮罩中間體10的第2例同樣,藉第2緣部11W及第1緣部11L所形成的角部相對於框狀部12浮起的情形會受到抑制。In addition, since each
連接於一對第1緣部11L當中的一第1緣部11L的複數個架橋部13構成第1架橋部群,連接於另一第1緣部11L的複數個架橋部13構成第2架橋部群。在長邊方向DL上,屬於第1架橋部群的各架橋部13的位置較佳為和屬於第2架橋部群的1個架橋部13的位置相等。藉此,與長邊方向DL中被框狀部12所支持的部位之數目、位置在一對第1緣部11L中互異的情況相比,可抑制在1個連接部位中所支持的荷重之偏差。因此,荷重之偏差在一對第1緣部11L中產生互異的變形之情況會受到抑制。A plurality of bridging
[第6例]
如圖10所示,在蒸鍍遮罩中間體10的第6例中,帶狀部11除了藉由一對第1緣部11L以外,亦在一對第2緣部11W中藉由架橋部13連接於框狀部12。各第2緣部11W係在藉第2緣要素及直線部11N2所形成的角部含有1個連接部位。[Example 6]
As shown in FIG. 10 , in the sixth example of the vapor deposition mask
藉此,帶狀部11中藉第2緣要素及直線部11N2所形成的角部被框狀部12所支持。因此,藉第2緣要素及直線部11N2所形成的角部相對於框狀部12浮起的情形會受到抑制。因此,於搬送蒸鍍遮罩中間體10時,蒸鍍遮罩中間體10變形的情況會進一步受到抑制。Thereby, the corner portion formed by the second edge element and the straight line portion 11N2 in the belt-shaped
[第7例]
如圖11所示,在蒸鍍遮罩中間體10的第7例中,帶狀部11除了藉由一對第1緣部11L以外,亦在一對直線部11N2中藉由架橋部13連接於框狀部12。各直線部11N2係含有1個連接部位,該1個連接部位係位在比長邊方向DL中之直線部11N2的中央部還靠近含有具備該直線部11N2的切口11N之第2緣部11W的第2緣要素。[Case 7]
As shown in FIG. 11, in the seventh example of the vapor deposition mask
藉此,帶狀部11中藉第2緣要素及直線部11N2所形成的角部的附近被框狀部12所支持。因此,藉第2緣要素及直線部11N2所形成的角部相對於框狀部12浮起的情形會受到抑制。因此,於搬送蒸鍍遮罩中間體10時,更進一步抑制蒸鍍遮罩中間體10變形。Thereby, the vicinity of the corner portion formed by the second edge element and the straight line portion 11N2 in the belt-shaped
[第8例]
如圖12所示,在蒸鍍遮罩中間體10的第8例中,帶狀部11除了藉由一對第1緣部11L以外,亦在一對直線部11N2中藉由架橋部13連接於框狀部12。各直線部11N2含有複數個連接部位。複數個連接部位係含有一連接部位,該一連接部位係位在比長邊方向DL中之直線部11N2的中央部還靠近含有具備該直線部11N2的切口11N之第2緣部11W的第2緣要素之位置。[Eighth case]
As shown in FIG. 12, in the eighth example of the vapor deposition mask
藉此,帶狀部11中藉第2緣要素及直線部11N2所形成的角部的附近被框狀部12所支持。因此,藉第2緣要素與直線部11N2所形成的角部相對於框狀部12浮起的情形會受到抑制。Thereby, the vicinity of the corner portion formed by the second edge element and the straight line portion 11N2 in the belt-shaped
而且,本例中,與第7例相比,在直線部11N2中靠近彎曲部11N1處亦存在有連接部位。藉此,框狀部12的突狀緣12E1被帶狀部11所支持。因此,突狀緣12E1相對於帶狀部11浮起的情形會受到抑制。In addition, in this example, compared with the seventh example, there is also a connecting portion near the curved portion 11N1 in the linear portion 11N2. Thereby, the protruding edge 12E1 of the frame-shaped
[第9例]
如圖13所示,在蒸鍍遮罩中間體10的第9例中,各第2緣部11W含有複數個切口11N。各第2緣部11W中,複數個切口11N係以等間隔地排列。因此,與複數個切口11N不規則地排列的情況相比,透過將從帶狀部11形成的蒸鍍遮罩以一對第2緣部11W從彼此分離的方式拉伸,在作用有沿著長邊方向的張力之情況,在蒸鍍遮罩的寬度方向作用於蒸鍍遮罩的張力有不均一的情況會受到抑制。因此,於蒸鍍遮罩發生皺褶或扭轉等之變形會受到抑制。[Case 9]
As shown in FIG. 13 , in the ninth example of the vapor deposition mask
在第2緣部11W中,沿著寬度方向DW延伸的區域為第2緣要素。帶狀部11係於第2緣要素藉架橋部13連接於框狀部12。第2緣部11W中,較佳為各第2緣要素具有1個以上的連接部位。各第2緣要素較佳為具有複數個且同數目的連接部位。藉此,在寬度方向DW中的第2緣部11W發生撓曲的情況會受到抑制。In the
連接於一對第2緣部11W中的一第2緣部11W的複數個架橋部13構成第1架橋部群,連接於另一第2緣部11W的複數個架橋部13構成第2架橋部群。在寬度方向DW中,屬於第1架橋部群的各架橋部13的位置較佳為和屬於第2架橋部群的1個架橋部13的位置相等。藉此,與寬度方向DW中被框狀部12所支持的部位之數目在一對第2緣部11W中互異的情況相比,可抑制在1個連接部位所支持的荷重之偏差。因此,荷重之偏差在一對第2緣部11W中產生互異的變形之情況會受到抑制。A plurality of bridging
與蒸鍍遮罩中間體10的第3例同樣,各第1緣部11L係於長邊方向DL在不與遮罩部11M重疊的部位藉架橋部13連接於框狀部12。Like the third example of the vapor deposition mask
[遮罩裝置之構成]
參照圖14及圖15來說明遮罩裝置之構成。
如圖14所示,遮罩裝置20具備主框架21及複數個蒸鍍遮罩31。主框架21具有支持複數個蒸鍍遮罩31的矩形框狀且被安裝在用以進行蒸鍍的蒸鍍裝置。主框架21係在涵蓋各蒸鍍遮罩31所存在的範圍的大致整體具有貫通主框架21的主框架孔21H。[Composition of masking device]
The configuration of the mask device will be described with reference to FIGS. 14 and 15 .
As shown in FIG. 14 , the
各蒸鍍遮罩31係從蒸鍍遮罩中間體10藉由切斷架橋部13而被卸下的帶狀部11,該蒸鍍遮罩中間體10具備被一對第1緣部11L與一對第2緣部11W包圍的帶狀部11、包圍該帶狀部11的框狀部12、及連接於帶狀部11及框狀部12的複數個架橋部13。蒸鍍遮罩31具有被一對第1緣部31L與一對第2緣部31W包圍的帶狀。各第2緣部31W係比第1緣部31L短且具備往第1緣部31L的長邊方向凹下的U字狀且U字的底部為曲線之切口31N。蒸鍍遮罩31的邊緣31E具備切口31N的底部、也就是彎曲部31N1。經切斷架橋部13的痕跡、也就是架橋痕跡於蒸鍍遮罩31的邊緣31E中所位在的部位係彎曲部31N1以外的部位。蒸鍍遮罩31具備沿著蒸鍍遮罩31的長邊方向排列的複數個遮罩部31M。各蒸鍍遮罩31的第2緣部31W係在被施加有一對第2緣部31W會從彼此分離的方向的張力之狀態下被安裝於主框架21。此外,於面對蒸鍍遮罩31的俯視圖中,蒸鍍遮罩31的切口31N亦可位在比主框架21還外側。Each
此外,蒸鍍遮罩31中的一對第1緣部31L是對應於帶狀部11中的一對第1緣部11L。蒸鍍遮罩31中的一對第2緣部31W是對應於帶狀部11中的一對第2緣部11W。蒸鍍遮罩31的邊緣31E是對應於帶狀部11的邊緣11E。蒸鍍遮罩31中的切口31N是對應於帶狀部11中的切口11N。蒸鍍遮罩31中的彎曲部31N1是對應於帶狀部11中的彎曲部11N1。蒸鍍遮罩31的遮罩部31M是對應於帶狀部11的遮罩部11M。In addition, the pair of
圖15係將蒸鍍遮罩31所具有的複數個架橋痕跡中的1個放大顯示。此外,圖15(a)顯示具備先前使用圖3(a)說明過的架橋部13的情況之架橋痕跡。相對地,圖15(b)顯示先前使用圖3(b)說明過的架橋部13的情況之架橋痕跡。圖15(c)顯示先前使用圖3(c)說明過的架橋部13的情況之架橋痕跡。又,以下,針對蒸鍍遮罩31是從蒸鍍遮罩中間體10的第1例所獲得之蒸鍍遮罩的情況作說明。此外,即便蒸鍍遮罩31是可從蒸鍍遮罩中間體10的第2例至第9例中任一者獲得的情況,蒸鍍遮罩31仍可具備以下說明的架橋痕跡。FIG. 15 is an enlarged display of one of the plurality of bridging marks included in the
如圖15(a)所示,第2緣部31W具備往和切口31N凹下的方向相同方向凹下的凹口31ED。凹口31ED係矩形狀的凹口。凹口31ED係對應於帶狀部11的第2緣部11W所具有的1個架橋用凹口11ED。在凹口31ED內存在有1個架橋痕跡31A。架橋痕跡31A係對應於上述的脆弱部13A。架橋痕跡31A係脆弱部13A的一部份朝蒸鍍遮罩31的表面彎曲的彎曲部。彎曲部係在從帶狀部11切斷架橋部13時因帶狀部11的連接部位朝帶狀部11的表面捲起而形成。As shown in FIG. 15( a ), the
如圖15(b)所示,蒸鍍遮罩31的第2緣部31W所具有的各架橋痕跡31B係由具有複數個圓弧狀的凹口及複數個彎曲部所構成。各架橋痕跡31B中,凹口與彎曲部交互排列。彎曲部為,蒸鍍遮罩31的邊緣31E中之一部份是朝蒸鍍遮罩31的表面彎曲的部位。彎曲部係在從帶狀部11切斷架橋部13時因帶狀部11的連接部位朝帶狀部11的表面捲起而形成。架橋痕跡31B的凹口對應於脆弱部13B所具有的貫通孔。相對地,架橋痕跡31B的彎曲部是對應於架橋部13的基端部中之貫通孔以外的部位。As shown in FIG. 15( b ), each bridging
如圖15(c)所示,蒸鍍遮罩31的第2緣部31W所具有的各架橋痕跡31C,係和架橋痕跡31B同樣由具有複數個圓弧狀的凹口及複數個彎曲部所構成。其中,架橋痕跡31C的在彎曲部的彎曲量係比架橋痕跡31B的在彎曲部的彎曲量還小。As shown in FIG. 15(c), the bridging traces 31C of the
此外,如同架橋痕跡31A、31B、31C般,在架橋痕跡31A、31B、31C具有彎曲部的情況,彎曲部係以在蒸鍍遮罩31中朝含有第1開口H1的面彎曲較佳。藉此,即便架橋痕跡31A、31B、31C具有彎曲部,亦可抑制蒸鍍遮罩31根據彎曲部的程度從主框架21浮上的情況。In addition, when the bridging traces 31A, 31B, and 31C have curved portions like the bridging traces 31A, 31B, and 31C, it is preferable that the curved portions be curved toward the surface including the first opening H1 in the
此外,蒸鍍遮罩31係亦可具有朝邊緣31E的外側突出且沿著蒸鍍遮罩31擴展的平面延伸的架橋痕跡。或者,蒸鍍遮罩31亦可具有朝邊緣31E的內側凹下的架橋痕跡。In addition, the
[蒸鍍遮罩的製造方法]
蒸鍍遮罩31的製造方法係具備:準備金屬薄片;將帶狀部11、框狀部12、及架橋部13形成於蒸鍍遮罩中間體10;及形成蒸鍍遮罩31。準備金屬薄片為,例如準備藉鐵‐鎳系合金所形成的金屬薄片。金屬薄片較佳為利用鐵‐鎳系合金中的恆範鋼形成的金屬薄片。[Manufacturing method of vapor deposition mask]
The manufacturing method of the
將帶狀部11、框狀部12、及架橋部13形成於蒸鍍遮罩中間體10,係形成具有跟隨蒸鍍遮罩31的邊緣31E之形狀的帶狀部11、具有跟隨蒸鍍遮罩31的邊緣31E之內側緣12E且包圍著帶狀部11的框狀部12、及連接帶狀部11的邊緣11E與框狀部12的內側緣12E之複數個架橋部13。形成蒸鍍遮罩31,係藉由切斷各架橋部13而從帶狀部11形成蒸鍍遮罩31。The belt-shaped
在蒸鍍遮罩中間體10形成帶狀部11,係形成具有邊緣11E的帶狀部11,該邊緣11E具備跟隨切口31N的底部之彎曲部11N1。在蒸鍍遮罩中間體10形成架橋部13,係在帶狀部11的邊緣11E中將各架橋部13連接於彎曲部11N1以外的部位。參照圖16以更詳細說明蒸鍍遮罩31的製造方法。此外,以下,說明在帶狀部11具備遮罩部11M的第1例之情況中之蒸鍍遮罩31的製造方法。The strip-shaped
如圖16所示,就蒸鍍遮罩31的製造方法而言,首先,準備金屬薄片(步驟S11)。在準備金屬薄片的工程中,亦可利用電解來準備金屬薄片,亦可利用軋延及研磨等來準備金屬薄片。於金屬薄片準備工程中所準備的金屬薄片係具有捲取呈帶狀的金屬薄片而成的卷狀。接著,於金屬薄片所具有的對象面之一者上形成阻劑層(步驟S12),之後,藉由對阻劑層進行曝光及顯影而在對象面形成阻劑遮罩(步驟S13)。As shown in FIG. 16 , in the method of manufacturing the
其次,藉由對使用了阻劑遮罩的對象面進行濕蝕刻而在金屬薄片形成複數個貫通孔11H(步驟S14)。此時,在形成複數個貫通孔11H的同時,形成帶狀部11、框狀部12及複數個架橋部13。又,在複數個架橋部13具有脆弱部13A的情況,脆弱部13A亦與貫通孔11H同時形成。藉此,獲得蒸鍍遮罩中間體10。亦即,可在蒸鍍遮罩中間體10形成帶狀部11、框狀部12、及複數個架橋部13。於蒸鍍遮罩中間體10,複數個帶狀部11是以隔著間隔排列的方式形成。Next, a plurality of through-
接著,藉由將阻劑遮罩從對象面除去而形成上述的遮罩部11M(步驟S15)。其次,將卷狀的蒸鍍遮罩中間體10沿著寬度方向切斷。藉此,獲得具有複數個帶狀部11的中間體薄片(步驟S16)。然後,藉由將連接於帶狀部11的複數個架橋部13切斷,可得到上述的蒸鍍遮罩31(步驟S17)。在將架橋部13切斷之際,藉由將框狀部12相對於帶狀部11折彎,可切斷脆弱部13A。Next, the above-mentioned
此外,在帶狀部11具備遮罩部11M的第2例之情況,從上述的步驟S12到步驟S15的工程是對背面10R實施,藉此形成小孔11SH。接著,在小孔11SH充填用以保護小孔11SH的保護層。接著,從上述的步驟S12到步驟S15的工程是對表面10F實施,藉此形成大孔11LH。藉此,可得到遮罩部11M的第2例。形成大孔11LH所用的阻劑遮罩亦可和形成小孔11SH所用的阻劑遮罩同時除去。In addition, in the case of the second example in which the belt-shaped
此外,在帶狀部11具備遮罩部11M的第2例且藉半蝕刻加工形成脆弱部13A之情況,脆弱部13A係亦可在步驟S12至步驟S15的工程對背面10R實施時形成。或者,脆弱部13A係亦可在步驟S12至步驟S15的工程對表面10F實施時形成。In addition, in the case where the belt-shaped
如同以上所說明,依據蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法的一實施形態,可得到以下所記載之效果。
(1)從帶狀部11形成的蒸鍍遮罩31是具備含有U字狀部分且U字狀部分的底部為曲線狀的切口31N。因此,在透過將各第2緣部31W中的切口31N的兩側往一對第2緣部31W從彼此分離的方向拉伸而施加張力於蒸鍍遮罩31之情況,作用於切口31N的力因切口31N所具有的形狀而被分散。藉此,於使用蒸鍍遮罩31時,可抑制在蒸鍍遮罩31發生皺褶或扭轉等之變形。As described above, according to one embodiment of the vapor deposition mask intermediate, the vapor deposition mask, and the manufacturing method of the vapor deposition mask, the effects described below can be obtained.
(1) The
(2)使帶狀部11連接於框狀部12的架橋部13是在帶狀部11的邊緣11E中連接於彎曲部11N1以外的部位。因此,在藉架橋部13之切斷所形成的蒸鍍遮罩31中於切口31N的彎曲部31N1殘留有架橋部13的一部份、有欠缺彎曲部31N1的一部份之情況會受到抑制。藉此,彎曲部31N1的形狀被維持成可分散施加在蒸鍍遮罩31的張力之形狀。因此,於使用蒸鍍遮罩31時,可抑制在蒸鍍遮罩31發生變形。(2) The bridging
(3)於搬送蒸鍍遮罩中間體10時,帶狀部11的第2緣部11W被框狀部12持續支持。因此,可抑制各第2緣部11W從框狀部12浮起,使帶狀部11的變形受到抑制。(3) When conveying the vapor deposition mask
(4)切口11N的兩側藉由架橋部13連接於框狀部12。因此,與僅切口11N兩側中的一側是藉由架橋部13連接於框狀部12的情況相比,於搬送蒸鍍遮罩中間體10時,帶狀部11被框狀部12持續支持。又,與僅切口11N兩側中的一側是藉由架橋部13連接於框狀部12的情況相比,帶狀部11難以相對於框狀部12進行變位。因此,於搬送蒸鍍遮罩中間體10時,帶狀部11藉由例如接觸搬送機構等,可抑制帶狀部11的一部份被折彎。(4) Both sides of the
(5)藉由各直線部11N2連接於突狀緣12E1,各直線部11N2與突狀緣12E1之剛性被提高。藉此,使帶狀部11的變形受到抑制。而且,突狀緣12E1相對於帶狀部11被折彎的情形會受到抑制。結果,於搬送蒸鍍遮罩中間體10時,可抑制帶狀部11的一部份或突狀緣12E1發生勾住搬送機構等的情形。(5) By connecting each straight portion 11N2 to the protruding edge 12E1, the rigidity between each straight portion 11N2 and the protruding edge 12E1 is improved. Thereby, deformation of the belt-shaped
(6)於搬送蒸鍍遮罩中間體10時,帶狀部11的第1緣部11L被框狀部12持續支持。因此,可抑制各第1緣部11L被折彎,使帶狀部11的變形受到抑制。(6) When conveying the vapor deposition mask
(7)因為第1緣部11L在比彎曲部11N1還靠端部處連接於框狀部12,所以帶狀部11的角部相對於框狀部12浮起的情形會受到抑制。因此,可抑制於搬送蒸鍍遮罩中間體10時發生角部勾住搬送機構等之情形。(7) Since the
(8)與架橋部13和遮罩部11M在長邊方向DL排列的情況相比,於搬送蒸鍍遮罩中間體10時,通過架橋部13作用於遮罩部11M的力被緩和。因此,使遮罩部11M所具有的貫通孔11H的變形受到抑制。(8) Compared with the case where the bridging
此外,上述的實施形態係可如以下般適宜地變更實施。
[連接部位的位置]
・與一對第1緣部11L或一對第2緣部11W逐一對應的2個架橋部群係亦可按以下那樣作變更。亦即,屬於第1架橋部群的各架橋部的位置係亦可在屬於第1架橋部群的複數個架橋部排列的方向中不與屬於第2架橋部群的複數個架橋部的位置相等。In addition, the above-mentioned embodiment can be suitably modified and implemented as follows.
[Position of connection part]
・The two bridging portion groups corresponding to the pair of
・若為可藉由框狀部12支持帶狀部11,則連接部位亦可僅存在於一對第1緣部11L中的一第1緣部11L,亦可僅存在於一對第2緣部11W中的一第2緣部11W。・If the belt-shaped
[架橋痕跡]
・蒸鍍遮罩31所具備的複數個架橋痕跡亦可包含具有第1形狀之架橋痕跡及具有和第1形狀不同的第2形狀之架橋痕跡。[Traces of bridging]
・The plurality of bridging traces included in the
[架橋部]
・帶狀部11和框狀部12亦可透過上述的脆弱部位在帶狀部11與框狀部12之間而藉由脆弱部彼此連接。在此情況,脆弱部所含有的金屬薄片的一部份為架橋部。換言之,脆弱部中的貫通孔以外的部分為架橋部。[Bridging Department]
・The belt-shaped
例如,如同參照圖3(a)所說明,在脆弱部13A是藉1個半蝕刻部所構成之情況,脆弱部13A的整體為架橋部。又,如同參照圖3(b)所說明,在脆弱部13B是具有複數個貫通孔之情況,脆弱部13B中位在貫通孔間的部分為架橋部。又,如同參照圖3(c)所說明,在脆弱部13C含有複數個貫通孔13C1及複數個半蝕刻部13C2,貫通孔13C1與半蝕刻部13C2交互排列的情況,半蝕刻部13C2為架橋部。又,在脆弱部中,複數個半蝕刻部隔著間隔地排列的情況,脆弱部的整體為架橋部。For example, as described with reference to FIG. 3( a ), when the
[線狀脆弱部]
如圖17所示,框狀部12可具備沿著從框狀部12的內側緣12E朝向框狀部12的外側緣12F的方向延伸的線狀脆弱部12A。在圖17所示的例子中,線狀脆弱部12A沿著和長邊方向DL交叉的方向延伸。又,線狀脆弱部12A的一端部係於內側緣12E中位在沿著長邊方向DL延伸的部分,線狀脆弱部12A的另一端部係位在框狀部12的內部。[Linear fragile part]
As shown in FIG. 17 , the frame-shaped
蒸鍍遮罩中間體10具備複數個線狀脆弱部12A。複數個線狀脆弱部12A係包含:在蒸鍍遮罩中間體10的搬送方向中位在比遮罩部11M還上游的上游側脆弱部12AU;及位在比遮罩部11M還下游的下游側脆弱部12AD。於上游側脆弱部12AU中,上游側脆弱部12AU的一端部係在內側緣12E中沿著長邊方向DL延伸,且繫接於位在比遮罩部11M還上游的部分。一方面,在下游側脆弱部12AD中,下游側脆弱部12AD的一端部係在內側緣12E中沿著長邊方向DL延伸,且繫接於位在比遮罩部11M還下游的部分。The vapor deposition mask
蒸鍍遮罩中間體10係在寬度方向DW的2個帶狀部11之間具有2個上游側脆弱部12AU及2個下游側脆弱部12AD。2個上游側脆弱部12AU係在寬度方向DW排列,在內側緣12E中朝包圍互異的帶狀部11的部分延伸。2個下游側脆弱部12AD係在寬度方向DW排列,在內側緣12E中朝包圍互異的帶狀部11的部分延伸。The vapor deposition mask
又,蒸鍍遮罩中間體10具有在寬度方向DW包夾2個帶狀部11的一對上游側脆弱部12AU,及在寬度方向DW包夾2個帶狀部11的一對下游側脆弱部12AD。此外,蒸鍍遮罩中間體10係只要具備此等線狀脆弱部12A中至少1個即可。In addition, the vapor deposition mask
線狀脆弱部12A的機械強度係比框狀部12中的線狀脆弱部12A以外的部分的機械強度還低。因此,框狀部12容易沿著線狀脆弱部12A被切斷。而且,因為線狀脆弱部12A中的一端部是位在框狀部12的內側緣12E,所以在從框狀部12卸下帶狀部11之際可切斷內側緣12E所形成的環。藉此,變得容易進行架橋部13的切斷。The mechanical strength of the linear
在從帶狀部11形成蒸鍍遮罩之際,首先,於長邊方向DL之既定的位置,將蒸鍍遮罩中間體10沿著寬度方向DW切斷。藉此,獲得僅具有沿著寬度方向DW排列的2個帶狀部11之蒸鍍遮罩中間體10。接著,透過沿著線狀脆弱部12A切斷框狀部12而切斷圍繞帶狀部11的內側緣12E的環。然後,透過將架橋部13折彎而從帶狀部11切斷架橋部13。藉此,可從帶狀部11形成蒸鍍遮罩。When forming the vapor deposition mask from the belt-shaped
圖18係將圖17所示的區域A放大顯示,又,圖19係將圖17所示的區域B放大顯示。圖20係將圖17所示的區域C放大顯示。此外,區域A係包含2個上游側脆弱部12AU中的上游端部,又,區域B係包含2個下游側脆弱部12AD中的下游端部。區域C係包含下游側脆弱部12AD的上游端部及在內側緣12E中供上游端部連接的部分。FIG. 18 shows an enlarged area A shown in FIG. 17 , and FIG. 19 shows an enlarged area B shown in FIG. 17 . FIG. 20 is an enlarged display of the area C shown in FIG. 17 . In addition, the region A includes the upstream end of the two upstream weakened portions 12AU, and the region B includes the downstream end of the two downstream weakened portions 12AD. The region C includes the upstream end of the downstream fragile portion 12AD and a portion connected to the upstream end in the
如圖18所示,各上游側脆弱部12AU的上游端部被連接於貫通框狀部12的上游側貫通部12BU。2個上游側貫通部12BU係於寬度方向DW隔著既定間隔地排列。在從帶狀部11形成蒸鍍遮罩31之際,例如,藉由可切斷框狀部12的器具,將框狀部12中於寬度方向DW藉2個上游側貫通部12BU包夾的部分切斷,藉此形成切斷片。接著,透過朝和蒸鍍遮罩中間體10擴展的平面交叉的方向將切斷片拉起,可使將2個上游側脆弱部12AU切斷的力對2個上游側脆弱部12AU同時作用。As shown in FIG. 18 , the upstream end portion of each upstream fragile portion 12AU is connected to an upstream penetrating portion 12BU penetrating through the frame-shaped
此外,於寬度方向DW包夾2個帶狀部11的一對上游側脆弱部12AU的每一者,其上游端部亦被連接於上游側貫通部12BU。Moreover, each of a pair of upstream side weak part 12AU which sandwiches two belt-shaped
如圖19所示,框狀部12具備和下游側脆弱部12AD的下游端部相連的被把持片12C、及包圍被把持片12C的下游側貫通部12BD。藉此,因為下游側脆弱部12AD的下游端部能以器具把持或以人的手指把持,所以容易使切斷下游側脆弱部12AD的力作用於下游側脆弱部12AD。透過朝和蒸鍍遮罩中間體10擴展的平面交叉的方向將被把持片12C拉起,可使將2個下游側脆弱部12AD切斷的力對2個下游側脆弱部12AD同時作用。As shown in FIG. 19 , the frame-shaped
此外,於寬度方向DW包夾2個帶狀部11的一對下游側脆弱部12AD的每一者,其下游端部亦被連接於把持片12C,且被把持片12C被下游側貫通部12BD所包圍。In addition, the downstream end of each of the pair of downstream fragile parts 12AD sandwiching the two belt-shaped
又,如圖20所示,框狀部12的內側緣12E亦可具有往離開該內側緣12E所圍繞的框狀部12的第1緣部11L的方向凹下的凹口12EA。從面對蒸鍍遮罩中間體10的表面10F的方向觀看,凹口12EA係具有矩形狀。下游側脆弱部12AD的上游端部被連接於內側緣12E中的凹口12EA。此外,下游側脆弱部12AD的上游端部可連接於從凹口12EA中位在最下游側的邊的一端朝向另一端的途中。Also, as shown in FIG. 20 , the
透過內側緣12E具有凹口12EA且下游側脆弱部12AD連接於凹口12EA,在沿著下游側脆弱部12AD切斷框狀部12之際,可抑制用以切斷框狀部12的外力作用於帶狀部11。藉此,可抑制外力作用於帶狀部11所具有的遮罩部11M。又,透過上游端部是在凹口12EA中存在於位在最下游側的邊中的一端和另一端以外的部分,使得下游側脆弱部12AD變得容易被切斷。Since the
此外,內側緣12E係不限於供各下游側脆弱部12AD連接的處所,在供各上游側脆弱部12AU連接的處所亦可具有凹口12EA,藉此,可獲得基於上述的凹口12EA的效果所達成的功效。In addition, the
在圖18到圖20所示的例子中,線狀脆弱部12A具有隔著間隔排列的複數個貫通部12A1。線狀脆弱部12A亦可藉1個半蝕刻部所形成,亦可具有隔著間隔地排列的複數個半蝕刻部。或者,線狀脆弱部12A係亦可具有複數個半蝕刻部及複數個貫通孔,且於線狀脆弱部12A中,半蝕刻部與貫通部交互地排列。In the examples shown in FIGS. 18 to 20 , the linear
又,連接有上游側脆弱部12AU的上游端部之上游側貫通部12BU係亦可變更成供下游側脆弱部12AD連接的被把持片12C及包圍被把持片12C的下游側貫通部12BD。或者,連接有下游側脆弱部12AD的下游端部之被把持片12C及包圍被把持片12C的下游側貫通部12BD係亦可變更成供上游側脆弱部12AU的上游端部連接之上游側貫通部12BU。In addition, the upstream through portion 12BU connected to the upstream end of the upstream weak portion 12AU may be changed to the grasped
[蒸鍍遮罩中間體] ・蒸鍍遮罩中間體除了具備金屬薄片以外,亦可具備積層於金屬薄片的樹脂層。在此情況,從蒸鍍遮罩中間體形成的蒸鍍遮罩也是由金屬薄片和樹脂層所形成。或者,蒸鍍遮罩中間體亦可具備2片金屬薄片、及於蒸鍍遮罩中間體的厚度方向被2片金屬薄片包夾的樹脂層。在此情況,從蒸鍍遮罩中間體形成的蒸鍍遮罩也是由2片金屬薄片及被2片金屬薄片包夾的樹脂層所形成。在此等任一情況,形成樹脂層的合成樹脂,例如亦可為聚醯亞胺樹脂。此外,藉由對樹脂層照射雷射光線,可形成此等蒸鍍遮罩中間體所具備的貫通孔。[Vapor deposition mask intermediate] ・Vapor deposition mask intermediates may include not only metal foils, but also resin layers laminated on metal foils. In this case, the vapor deposition mask formed from the vapor deposition mask intermediate is also formed of a metal foil and a resin layer. Alternatively, the vapor deposition mask intermediate body may include two metal sheets and a resin layer sandwiched by the two metal sheets in the thickness direction of the vapor deposition mask intermediate body. In this case, the vapor deposition mask formed from the vapor deposition mask intermediate is also formed of two metal sheets and a resin layer sandwiched between the two metal sheets. In any of these cases, the synthetic resin forming the resin layer may be, for example, polyimide resin. In addition, the through-holes included in these evaporation mask intermediates can be formed by irradiating the resin layer with laser light.
[蒸鍍遮罩的製造方法]
・帶狀部11、框狀部12、及複數個架橋部13也能以和形成遮罩部11M的貫通孔11H之工程不同的工程形成。在此情況,各架橋部13所具有的脆弱部13A也能以形成遮罩部11M的貫通孔11H之工程形成,也能以形成帶狀部11、框狀部12、及複數個架橋部13之工程形成。[Manufacturing method of vapor deposition mask]
・The strip-shaped
於此等情況,帶狀部11、框狀部12、架橋部13、及脆弱部13A係和遮罩部11M的貫通孔11H同樣,也能透過濕蝕刻來形成。又,在形成帶狀部11、框狀部12、及複數個架橋部13的工程與形成脆弱部13A的工程不同的情況,帶狀部11、框狀部12、及複數個架橋部13是藉雷射加工所形成,另一方面,脆弱部13A亦可藉濕蝕刻形成。或者,帶狀部11、框狀部12、架橋部13、及脆弱部13A亦可藉雷射加工形成。或者,帶狀部11、框狀部12、及複數個架橋部13是藉加壓加工所形成,另一方面,脆弱部13A亦可藉濕蝕刻或者雷射加工所形成。In these cases, the strip-shaped
此外,在帶狀部11、框狀部12、架橋部13、及脆弱部13A是藉相同的工程所形成的情況,此等亦可藉雷射加工所形成。In addition, in the case where the belt-shaped
10:蒸鍍遮罩中間體
10F:表面
10R:背面
11:帶狀部
11E、31E:邊緣
11ED:橋用凹口
11H、13C1:貫通孔
11L、31L:第1緣部
11LH:大孔
11M、31M:遮罩部
11N、31N:切口
11N1、31N1:彎曲部
11N2:直線部
11N3:曲線部
11SH:小孔
11W、31W :第2緣部
12:框狀部
12A:線狀脆弱部
12A1:貫通部
12AD:下游側脆弱部
12AU:上游側脆弱部
12BD:下游側貫通部
12BU:上游側貫通部
12C:被把持部
12E:內側緣
12E1:突狀緣
12EA、31ED:凹口
12F:外側緣
13:架橋部
13A、13B、13C:脆弱部
13C2:半蝕刻部
20:遮罩裝置
21:主框架
21H:主框架孔
31:蒸鍍遮罩
31A、31B、31C:架橋痕跡
H1:第1開口
H2:第2開口
R13:架橋區域
RN:非架橋區域
SH:階高
10: Evaporation mask intermediate
10F: surface
10R: Back
11:
圖1係顯示蒸鍍遮罩中間體的構造之平面圖。 圖2(a)係顯示帶狀部所具備的切口的第1例之平面圖,圖2(b)係顯示帶狀部所具備的切口的第2例之平面圖。 圖3(a)~圖3(c)係將架橋部、帶狀部中連接有架橋部的部位、及框狀部中連接有架橋部的部位放大顯示之平面圖。 圖4(a)係顯示遮罩部所具備的貫通孔的第1例之剖面圖,圖4(b)係顯示遮罩部所具備的貫通孔的第2例之剖面圖。 圖5係顯示蒸鍍遮罩中間體的第1例中的構造之平面圖。 圖6係顯示蒸鍍遮罩中間體的第2例中的構造之平面圖。 圖7係顯示蒸鍍遮罩中間體的第3例中的構造之平面圖。 圖8係顯示蒸鍍遮罩中間體的第4例中的構造之平面圖。 圖9係顯示蒸鍍遮罩中間體的第5例中的構造之平面圖。 圖10係顯示蒸鍍遮罩中間體的第6例中的構造之平面圖。 圖11係顯示蒸鍍遮罩中間體的第7例中的構造之平面圖。 圖12係顯示蒸鍍遮罩中間體的第8例中的構造之平面圖。 圖13係顯示蒸鍍遮罩中間體的第9例中的構造之平面圖。 圖14係顯示具備蒸鍍遮罩的遮罩裝置的構造之平面圖。 圖15(a)~圖15(c)係放大顯示蒸鍍遮罩所具備的架橋痕跡之平面圖。 圖16係用以說明蒸鍍遮罩的製造方法之流程圖。 圖17係顯示蒸鍍遮罩中間體的變更例中的構造之平面圖。 圖18係放大顯示圖17中的區域A之部分放大平面圖。 圖19係放大顯示圖17中的區域B之部分放大平面圖。 圖20係放大顯示圖17中的區域C之部分放大平面圖。FIG. 1 is a plan view showing the structure of an evaporation mask intermediate. FIG. 2( a ) is a plan view showing a first example of the notch provided in the strip-shaped portion, and FIG. 2( b ) is a plan view showing a second example of the notch provided in the strip-shaped portion. 3( a ) to FIG. 3( c ) are plan views showing enlarged bridging parts, parts connected to the bridging parts in the band-shaped part, and parts connected to the bridging parts in the frame-shaped part. FIG. 4( a ) is a cross-sectional view showing a first example of a through-hole included in a mask portion, and FIG. 4( b ) is a cross-sectional view showing a second example of a through-hole included in a mask portion. Fig. 5 is a plan view showing the structure of the first example of the vapor deposition mask intermediate. Fig. 6 is a plan view showing the structure of the second example of the vapor deposition mask intermediate. Fig. 7 is a plan view showing the structure of the third example of the vapor deposition mask intermediate. Fig. 8 is a plan view showing the structure of the fourth example of the vapor deposition mask intermediate. Fig. 9 is a plan view showing the structure of a fifth example of the vapor deposition mask intermediate. Fig. 10 is a plan view showing the structure of the sixth example of the vapor deposition mask intermediate. Fig. 11 is a plan view showing the structure of the seventh example of the vapor deposition mask intermediate. Fig. 12 is a plan view showing the structure of the eighth example of the vapor deposition mask intermediate. Fig. 13 is a plan view showing the structure of the ninth example of the vapor deposition mask intermediate. Fig. 14 is a plan view showing the structure of a mask device provided with a vapor deposition mask. 15( a ) to 15 ( c ) are enlarged plan views showing bridging traces included in the vapor deposition mask. FIG. 16 is a flowchart illustrating a method of manufacturing a vapor deposition mask. Fig. 17 is a plan view showing the structure of a modified example of the vapor deposition mask intermediate. FIG. 18 is an enlarged plan view showing part of the area A in FIG. 17 . FIG. 19 is an enlarged plan view showing part of the region B in FIG. 17 . FIG. 20 is an enlarged plan view showing part of the region C in FIG. 17 .
10:蒸鍍遮罩中間體 10: Evaporation mask intermediate
11:帶狀部 11: Ribbon
11E:邊緣 11E: Edge
11L:第1緣部 11L: the first edge
11M:遮罩部 11M: mask part
11N:切口 11N: Notch
11N1:彎曲部 11N1: bending part
11W:第2緣部 11W: the second edge
12:框狀部 12: frame part
12E:內側緣 12E: medial edge
12E1:突狀緣 12E1: Protruding border
13:架橋部 13: Bridging Department
R13:架橋區域 R13: Bridging area
RN:非架橋區域 RN: Non-bridging area
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TW201527560A (en) * | 2013-11-14 | 2015-07-16 | Dainippon Printing Co Ltd | Vapor deposition mask, vapor deposition mask with frame, and method for manufacturing organic semiconductor element |
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