TWI826810B - Method for manufacturing metal mask and electroforming plate - Google Patents
Method for manufacturing metal mask and electroforming plate Download PDFInfo
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- TWI826810B TWI826810B TW110128063A TW110128063A TWI826810B TW I826810 B TWI826810 B TW I826810B TW 110128063 A TW110128063 A TW 110128063A TW 110128063 A TW110128063 A TW 110128063A TW I826810 B TWI826810 B TW I826810B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 50
- 238000005323 electroforming Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 21
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 7
- 238000003698 laser cutting Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 229920001621 AMOLED Polymers 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001802 infusion Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
Description
本發明是有關一種金屬遮罩的製作技術,尤其是一種以電鑄製程進行遮罩製作的金屬遮罩的製作方法及電鑄母板。The present invention relates to a metal mask manufacturing technology, in particular to a metal mask manufacturing method using an electroforming process and an electroforming motherboard.
有源矩陣有機發光二極體(Active Matrix Organic Light Emitting Diode,AMOLED)顯示器採用有機發光二極體(OLED)作為發光源,具有顯示反應速度快、超寬視角、超高對比度和飽和度、色域寬廣的優點。AMOLED面板在製程上需要採用有機發光材料作為發光源的有機成膜技術,其中真空蒸鍍法是目前最為成熟,也是現有絕大部分量產的小尺寸AMOLED產品採用的有機成膜技術。在蒸鍍過程中,需要使用精密金屬遮罩 (Fine pitch Metal Mask,FMM)用於鍍膜遮擋,產生像素圖形,然後在真空環境下將有機材料加熱使之蒸發並通過精密金屬遮罩在基板上選擇沉積成膜。精密金屬遮罩屬於AMOLED製程中的核心模具和耗材。Active Matrix Organic Light Emitting Diode (AMOLED) displays use organic light emitting diodes (OLED) as the light source, and have the characteristics of fast display response, ultra-wide viewing angle, ultra-high contrast and saturation, color Advantages of broad domain. The manufacturing process of AMOLED panels requires the use of organic film-forming technology using organic light-emitting materials as the light source. Among them, the vacuum evaporation method is currently the most mature and is also the organic film-forming technology used by most of the currently mass-produced small-size AMOLED products. In the evaporation process, a fine pitch metal mask (FMM) needs to be used for coating shielding to produce pixel graphics. The organic material is then heated in a vacuum environment to evaporate it and is masked on the substrate through the fine pitch metal mask. Select deposition film. Precision metal masks are the core molds and consumables in the AMOLED manufacturing process.
隨著顯示器解析度需求提高,對高精密度的OLED金屬遮罩之尺寸公差要求更趨嚴峻,若蒸鍍用金屬遮罩的尺寸及定位精度不佳,將造成OLED顯示器不同顏色(發光薄膜)錯亂現象,嚴重影響各有機發光層發光效率不均,而使得顯示面無法呈現高解析度的文字、畫面或圖案。As the demand for display resolution increases, the dimensional tolerance requirements for high-precision OLED metal masks become more stringent. If the size and positioning accuracy of the metal mask used for evaporation is poor, it will cause different colors of the OLED display (luminous film) The disorder phenomenon seriously affects the uneven luminous efficiency of each organic light-emitting layer, making it impossible to display high-resolution text, pictures or patterns on the display surface.
目前在以電鑄製程製作金屬遮罩時,受限於導電圖案兩側普遍常設之邊界開槽(outline)的設計,電流僅能由導電圖案的另外兩側進入到導電圖案中心,導致所形成之金屬遮罩的開口有膜厚及尺寸不均的情形。Currently, when making metal masks using the electroforming process, they are limited by the design of the generally permanent boundary grooves (outlines) on both sides of the conductive pattern. Current can only enter the center of the conductive pattern from the other two sides of the conductive pattern, resulting in the formation of The openings of the metal mask have uneven film thickness and size.
本發明提供一種金屬遮罩的製作方法及電鑄母板,於進行電鑄製程時,電流可均勻導入各個導電圖案部,以改善金屬遮罩的開口有膜厚及尺寸不均的情形,而提高開口的可利用率。The present invention provides a method for making a metal mask and an electroforming motherboard. During the electroforming process, current can be uniformly introduced into each conductive pattern portion to improve the uneven film thickness and size of the openings of the metal mask. Improve opening availability.
本發明所提供的金屬遮罩的製作方法,包含:提供電鑄母板,包含基材及導電圖案層,導電圖案層形成於基材上,導電圖案層上形成有導電圖案部、導電框架部,多條外邊界開槽、以及多個電流匯入點,導電圖案部形成有多個圖案開口,以顯露基材,導電框架部圍設導電圖案部,外邊界開槽分別形成於每一導電圖案部的相對兩側,電流匯入點形成於每一導電圖案部的至少一側的外邊界開槽,以電性連接導電圖案部及導電框架部;進行一電鑄製程,於電鑄母板的表面形成電鑄膜;以及對應於外邊界開槽對電鑄膜進行切割,且分離電鑄膜及電鑄母板,分離的電鑄膜構成金屬遮罩,且金屬遮罩上具有多個遮罩開口。The method for making a metal mask provided by the present invention includes: providing an electroformed motherboard, including a base material and a conductive pattern layer. The conductive pattern layer is formed on the base material, and a conductive pattern part and a conductive frame part are formed on the conductive pattern layer. , multiple outer boundary slots and multiple current inflow points, the conductive pattern part is formed with multiple pattern openings to expose the base material, the conductive frame part surrounds the conductive pattern part, and the outer boundary slots are respectively formed on each conductive On opposite sides of the pattern portion, current inflow points are formed in grooves on the outer boundary of at least one side of each conductive pattern portion to electrically connect the conductive pattern portion and the conductive frame portion; an electroforming process is performed to form the electroforming mother An electroformed film is formed on the surface of the plate; and the electroformed film is cut corresponding to the outer boundary slot, and the electroformed film and the electroformed motherboard are separated, and the separated electroformed film constitutes a metal mask, and the metal mask has multiple mask opening.
在本發明的一實施例中,上述之電流匯入點的圖形選自矩形、三角形及梯形其中之一或其組合。In an embodiment of the present invention, the shape of the current inlet point is selected from one of rectangle, triangle and trapezoid or a combination thereof.
在本發明的一實施例中,於進行上述之電鑄製程時,電鑄母板置於電鑄槽中作為陰極體,且電流經由導電框架部及電流匯入點均勻導入導電圖案部。In one embodiment of the present invention, during the above-mentioned electroforming process, the electroformed motherboard is placed in the electroforming tank as the cathode body, and the current is evenly introduced into the conductive pattern part through the conductive frame part and the current infusion point.
在本發明的一實施例中,上述之導電圖案部的個數為多個,導電框架部包含導電外框部及多個導電肋部,導電肋部間隔排列且與導電外框部連接,經由導電肋部使導電圖案部兩兩隔開。In an embodiment of the present invention, the number of the above-mentioned conductive pattern parts is multiple, and the conductive frame part includes a conductive outer frame part and a plurality of conductive rib parts. The conductive rib parts are spaced apart and connected to the conductive outer frame part via The conductive ribs separate the conductive pattern parts two by two.
在本發明的一實施例中,上述之外邊界開槽設置於導電肋部及外框部,以位於每一導電圖案部的相對兩側。In one embodiment of the present invention, the outer boundary slots are provided in the conductive rib portion and the outer frame portion so as to be located on opposite sides of each conductive pattern portion.
在本發明的一實施例中,上述之遮罩開口的分佈對應於圖案開口的分佈,且遮罩開口的孔徑小於圖案開口的孔徑。In an embodiment of the present invention, the distribution of the mask openings corresponds to the distribution of the pattern openings, and the aperture of the mask opening is smaller than the aperture of the pattern opening.
在本發明的一實施例中,上述之每一導電圖案部包含相對兩第一側及相對兩第二側,外邊界開槽分別形成於兩第一側,導電框架部上形成有開孔,分別位於每一導電圖案部的兩第二側。In an embodiment of the present invention, each of the above-mentioned conductive pattern parts includes two opposite first sides and two opposite second sides, outer boundary slots are respectively formed on the two first sides, and openings are formed on the conductive frame part. respectively located on two second sides of each conductive pattern portion.
在本發明的一實施例中,上述之金屬遮罩上形成有定位缺口,對應於開孔的分佈。In one embodiment of the present invention, positioning notches are formed on the above-mentioned metal mask, corresponding to the distribution of the openings.
在本發明的一實施例中,對上述之電鑄膜進行切割的方法選自機械切割及雷射切割其中之一。In an embodiment of the present invention, the method for cutting the electroformed film is selected from one of mechanical cutting and laser cutting.
本發明所提供的金屬遮罩的製作方法,包含:提供電鑄母板,包含基材及導電圖案層,導電圖案層形成於基材上,導電圖案層上形成有多個導電圖案部及導電框架部,每一導電圖案部形成有多個圖案開口,以顯露基材,導電框架部形成有導電外框部及多個導電肋部,導電肋部間隔排列且與導電外框部連接,導電外框部圍設導電圖案部,且導電肋部使導電圖案部兩兩隔開;進行電鑄製程,於電鑄母板的表面形成電鑄膜;以及對應於導電肋部對電鑄膜進行切割,且分離電鑄膜及電鑄母板,分離的電鑄膜構成金屬遮罩,且金屬遮罩上具有多個遮罩開口。The method for making a metal mask provided by the present invention includes: providing an electroformed motherboard, including a base material and a conductive pattern layer. The conductive pattern layer is formed on the base material. A plurality of conductive pattern portions and conductive pattern portions are formed on the conductive pattern layer. In the frame part, each conductive pattern part is formed with a plurality of pattern openings to expose the substrate. The conductive frame part is formed with a conductive outer frame part and a plurality of conductive rib parts. The conductive rib parts are arranged at intervals and connected to the conductive outer frame part. The conductive frame part is The outer frame is surrounded by conductive pattern parts, and the conductive ribs separate the conductive pattern parts two by two; an electroforming process is performed to form an electroformed film on the surface of the electroformed motherboard; and the electroformed film is processed corresponding to the conductive ribs Cutting and separating the electroformed film and the electroformed motherboard, the separated electroformed film forms a metal mask, and the metal mask has multiple mask openings.
在本發明的一實施例中,於進行上述之電鑄製程時,電鑄母板置於電鑄槽中作為陰極體,且電流經由導電外框部及導電肋部均勻導入導電圖案部。In one embodiment of the present invention, during the above-mentioned electroforming process, the electroformed motherboard is placed in the electroforming tank as the cathode body, and the current is uniformly introduced into the conductive pattern portion through the conductive outer frame portion and the conductive rib portion.
在本發明的一實施例中,上述之每一導電圖案部包含相對兩第一側及相對兩第二側,導電肋部沿著兩第一側的至少其中之一設置,導電外框部上形成有開孔,分別位於每一導電圖案部的兩第二側。In an embodiment of the present invention, each of the above-mentioned conductive pattern parts includes two opposite first sides and two opposite second sides, the conductive ribs are arranged along at least one of the two first sides, and the conductive outer frame part Opening holes are formed respectively on two second sides of each conductive pattern part.
本發明所提供的電鑄母板,包含基材及導電圖案層。導電圖案層形成於基材上,導電圖案層包含導電圖案部、導電框架部、多條外邊界開槽、以及多個電流匯入點,導電圖案部包含多個圖案開口,以顯露基材,導電框架部圍設導電圖案部,外邊界開槽分別形成於每一導電圖案部的相對兩側,電流匯入點形成於每一導電圖案部的至少一側的外邊界開槽,以電性連接導電圖案部及導電框架部。The electroformed motherboard provided by the invention includes a base material and a conductive pattern layer. The conductive pattern layer is formed on the substrate. The conductive pattern layer includes a conductive pattern portion, a conductive frame portion, a plurality of outer boundary slots, and a plurality of current inflow points. The conductive pattern portion includes a plurality of pattern openings to expose the substrate. The conductive frame part surrounds the conductive pattern part, the outer boundary slots are formed on opposite sides of each conductive pattern part, and the current infusion point is formed on the outer boundary slot of at least one side of each conductive pattern part to electrically Connect the conductive pattern part and the conductive frame part.
本發明所提供的電鑄母板包含基材及導電圖案層,導電圖案層形成於基材上,導電圖案層包含多個導電圖案部及導電框架部,每一導電圖案部包含多個圖案開口,以顯露基材,導電框架部包含導電外框部及導電肋部,導電肋部間隔排列且與導電外框部連接,導電外框部圍設導電圖案部,且導電肋部使導電圖案部兩兩隔開。The electroformed motherboard provided by the present invention includes a base material and a conductive pattern layer. The conductive pattern layer is formed on the base material. The conductive pattern layer includes a plurality of conductive pattern parts and a conductive frame part. Each conductive pattern part includes a plurality of pattern openings. , to expose the substrate, the conductive frame part includes a conductive outer frame part and a conductive rib part, the conductive rib parts are arranged at intervals and connected to the conductive outer frame part, the conductive outer frame part surrounds the conductive pattern part, and the conductive rib part makes the conductive pattern part Separate each other.
本發明藉由在外邊界開槽形成電流匯入點,或者不預留外邊界開槽的設計,使得電流可均勻導入各個導電圖案部,以而改善金屬遮罩的開口有膜厚及尺寸不均的情形,而提高開口的可利用率。The present invention forms a current inflow point by notching slots on the outer boundary, or by designing without leaving slots on the outer boundary, so that current can be evenly introduced into each conductive pattern part, thereby improving the uneven film thickness and size of the opening of the metal mask. situation to improve the availability of the opening.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other objects, features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.
圖1A至圖1C所示是本發明一實施例金屬遮罩的製作方法的部分剖面示意圖,圖2A至圖2C所示是本發明一第一實施例金屬遮罩的製作方法的俯視示意圖。首先,提供電鑄母板10,如圖1A及圖2A所示,電鑄母板10包含基材12及導電圖案層14,基材12的材質可選自玻璃、聚醯亞胺(PI)或聚酯(PET)其中之一,導電圖案層14形成於基材12上,導電圖案層14的材料例如是銅、鎳、鉬等金屬導電材料或其它非金屬導電材料。如圖2A所示,導電圖案層14上形成有導電圖案部16、導電框架部18,多條外邊界開槽20、以及多個電流匯入點22。每一導電圖案部16形成有多個圖案開口161,以經由圖案開口161顯露基材12;導電框架部18圍設導電圖案部16;外邊界開槽20分別形成於導電圖案部16的相對兩側;電流匯入點22形成於每一導電圖案部16的至少一側的外邊界開槽20,以電性連接導電圖案部16及導電框架部18。1A to 1C are partial cross-sectional schematic diagrams of a method for manufacturing a metal mask according to an embodiment of the present invention, and FIGS. 2A to 2C are schematic top views of a method for manufacturing a metal mask according to a first embodiment of the present invention. First, an
接續上述說明,於一實施例中,導電圖案部16的個數例如為多個,圖2A中以例如三個導電圖案部16為例,導電圖案部16間隔排列,每一導電圖案部16略呈長條形,具有相對的兩第一側162及相對的兩第二側163;請同時參閱圖1A及圖2A所示,導電圖案部16包含導電子圖形164,導電子圖形164之間構成圖案開口161。導電框架部18包含導電外框部181及多個導電肋部182,導電外框部181例如可包含相對的兩第一邊框181a及相對的兩第二邊框181b,導電肋部182間隔排列且與兩第二邊框181b連接,其中,經由導電肋部182使導電圖案部16兩兩隔開;又外邊界開槽18設置於導電肋部182及導電外框部181,以位於每一導電圖案部16的相對兩側(例如相對兩第一側162),具體而言,如圖2A所示,導電外框部181的兩第一邊框181a上各自形成有一條外邊界開槽20,每一導電肋部182上各自形成有兩條外邊界開槽20,因此在具有三個導電圖案部16的實施前提下,導電圖案層14上形成有六條外邊界開槽20。又電流匯入點22可設置於每一導電圖案部16之兩第一側162旁的外邊界開槽20,使得第一邊框181a/導電肋部182與導電圖案部16之間雖然以外邊界開槽20分隔開,仍然可藉由電流匯入點22電性連接第一邊框181a/導電肋部182及每一導電圖案部16。Continuing with the above description, in one embodiment, the number of
接著,進行電鑄製程,於一實施例中,將電鑄母板10置於電鑄槽中作為陰極體,且電流經由導電框架部18及電流匯入點22均勻導入導電圖案部16。如圖1B及圖2B所示,藉由電鑄製程,於電鑄母板10的表面形成一具有預定均勻厚度的電鑄膜24,電鑄膜24可以用鎳鐵(Ni-Fe)合金的銦鋼(Invar)製成,除了鎳鐵合金之外,電鑄膜24還可以由選自鎳鎢(Ni-W)合金和鎳鈷(Ni-Co)合金的材料製成,然而,電鑄膜24的材料並不限於此。電鑄膜24例如覆蓋導電框架部18(標示於圖2A)及部分的導電圖案部16(標示於圖1A及圖2A),其中在導電圖案部16上,電鑄膜24覆蓋了每一導電子圖形164(標示於圖1A及圖2A)以及每一圖案開口161(標示於圖1A及圖2A)的側壁,而未覆蓋圖案開口161的中間部分,使得電鑄膜24上具有多個遮罩開口241,遮罩開口241的分佈對應於圖案開口161的分佈,且遮罩開口241的孔徑小於圖案開口161的孔徑。其中藉由導電子圖形164的排列設計,遮罩開口241可選自圓形、橢圓形、矩形其中之一或其組合。Next, an electroforming process is performed. In one embodiment, the
最後,對應且沿著外邊界開槽20對電鑄膜24進行切割,且將電鑄膜24自電鑄母板10分離,如圖1C及圖2C所示,於一實施例中,在形成有六條外邊界開槽20的實施前提下,分離的電鑄膜24可包含三條金屬遮罩24a,且每一金屬遮罩24a具有多個遮罩開口241。於一實施例中,對電鑄膜24進行切割的方法選自機械切割及雷射切割其中之一,其中,由於外邊界開槽20的形成,以機械切割方式沿著外邊界開槽20對電鑄膜24進行切割,具有快速且成本較低的優勢。Finally, the
其中,電流匯入點22的圖形可選自矩形、三角形及梯形其中之一或其組合,圖3A至圖3C所示分別是不同形狀的電流匯入點形成於外邊界開槽示意圖,如圖3A所示之電流匯入點22呈矩形且形成於外邊界開槽20,如3B所示之電流匯入點22A呈三角形,如圖3C所示之電流匯入點22B呈梯形。The shape of the
在上述圖1A及圖2A所示之電鑄母板10中,電鑄母板10的導電圖案層14形成有外邊界開槽20及電流匯入點22,惟不限於此,導電圖案層14上可不形成有外邊界開槽20及電流匯入點22。圖4A至圖4C所示是本發明一第二實施例金屬遮罩的製作方法的俯視示意圖,在第二實施例中,仍可參照圖1A至圖1C所示的部分剖面示意圖,第一實施例及第二實施例的主要差異在於電鑄母板10/10A上之導電圖案層14/14A的設計。在第二實施例中,如圖4A所示,提供的電鑄母板10A包含基材12(標示於圖1A)及導電圖案層14A,導電圖案層14A上並無形成有第一實施例中所示之外邊界開槽20及電流匯入點22。具體而言,導電圖案層14A上形成有多個導電圖案部16及導電框架部18,每一導電圖案部16形成有多個圖案開口161,以經由圖案開口161顯露基材12,導電框架部18具有導電外框部181及多個導電肋部182,導電肋部182間隔排列且與導電外框部181的相對兩第二邊框181b連接,導電外框部181圍設導電圖案部16,且導電肋部182使導電圖案部16兩兩隔開。In the above-mentioned
接著,進行電鑄製程,於一實施例中,將電鑄母板10A置於電鑄槽中作為陰極體,電流可經由導電外框部181及導電肋部182均勻導入導電圖案部16,如圖4B所示,藉由電鑄製程,於電鑄母板10A的表面形成一具有預定均勻厚度的電鑄膜24,電鑄膜24上具有多個遮罩開口241。電鑄膜24的材料及遮罩開口241的形狀已揭示如上,於此不再贅述。Next, an electroforming process is performed. In one embodiment, the
最後,對應且沿著導電肋部182對電鑄膜24進行切割,如圖4C所示,且將電鑄膜24自電鑄母板10A分離,其中,以雷射切割方式對電鑄膜24進行切割,在導電圖案層14A形成有三導電圖案部16的前提下,切割且分離的電鑄膜24構成三條金屬遮罩24a,且每一金屬遮罩24a具有多個遮罩開口241。Finally, the
在上述圖2A及圖4A所示的實施例中,每一導電框架部18上形成有多個開孔26,分別位於每一導電圖案部16的兩第二側163;如此,在進行電鑄製程時,電鑄膜24在對應開孔26的位置處將形成缺口28,作為金屬遮罩24a於後續製程中供治具夾持定位之用。In the above embodiments shown in FIGS. 2A and 4A , a plurality of
在本發明實施例金屬遮罩的製作方法中,藉由在外邊界開槽形成電流匯入點,使得導電框架部與導電圖案部之間雖然以外邊界開槽分隔開,仍然可藉由電流匯入點電性連接導電框架部及每一導電圖案部,使得電流可均勻導入各個導電圖案部,以改善金屬遮罩的開口有膜厚及尺寸不均的情形,而提高開口的可利用率(utilization rate)。又或在本發明實施例金屬遮罩的製作方法中,可不預留外邊界開槽的設計,使得電流可均勻導入各個導電圖案部,並於電鑄製程後,以雷射切割方式定義金屬遮罩的外邊界,如此,藉由電流的全面均勻導入,亦可改善金屬遮罩的開口有膜厚及尺寸不均的情形,而提高開口的可利用率。In the manufacturing method of the metal mask according to the embodiment of the present invention, the current sinking point is formed by slotting on the outer boundary, so that although the conductive frame part and the conductive pattern part are separated by the slotting on the outer boundary, they can still be connected by the current sinking point. The entry point is electrically connected to the conductive frame part and each conductive pattern part, so that the current can be evenly introduced into each conductive pattern part, so as to improve the uneven film thickness and size of the opening of the metal mask, and improve the availability of the opening ( utilization rate). Or in the manufacturing method of the metal mask according to the embodiment of the present invention, the design of the outer boundary slot may not be reserved so that the current can be evenly introduced into each conductive pattern part, and after the electroforming process, the metal mask is defined by laser cutting. The outer boundary of the mask, in this way, can also improve the uneven film thickness and size of the openings of the metal mask through the uniform introduction of current, thereby improving the availability of the openings.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended patent application scope.
10、10A:電鑄母板
12:基材
14、14A:導電圖案層
16:導電圖案部
161:圖案開口
162:第一側
163:第二側
164:導電子圖形
18:導電框架部
181:導電外框部
181a:第一邊框
181b:第二邊框
182:導電肋部
20:外邊界開槽
22、22A、22B:電流匯入點
24:電鑄膜
24a:金屬遮罩
241:遮罩開口
26:開孔
28:定位缺口
10, 10A: electroformed motherboard
12:
圖1A至圖1C所示是本發明一實施例金屬遮罩的製作方法的部分剖面示意圖。 圖2A至圖2C所示是本發明一第一實施例金屬遮罩的製作方法的俯視示意圖。 圖3A至圖3C所示分別是不同形狀的電流匯入點形成於外邊界開槽示意圖。 圖4A至圖4C所示是本發明一第二實施例金屬遮罩的製作方法的俯視示意圖。 1A to 1C are partial cross-sectional schematic diagrams of a manufacturing method of a metal mask according to an embodiment of the present invention. 2A to 2C are schematic top views of a manufacturing method of a metal mask according to a first embodiment of the present invention. Figures 3A to 3C show schematic diagrams of current inflow points of different shapes formed on the outer boundary of the slot. 4A to 4C are schematic top views of a manufacturing method of a metal mask according to a second embodiment of the present invention.
10:電鑄母板 10:Electroforming motherboard
12:基材 12:Substrate
14:導電圖案層 14: Conductive pattern layer
16:導電圖案部 16: Conductive pattern department
161:圖案開口 161: Pattern opening
162:第一側 162: First side
163:第二側 163: Second side
164:導電子圖形 164: Conductive electron pattern
18:導電框架部 18:Conductive frame part
181:導電外框部 181: Conductive outer frame
181a:第一邊框 181a: first border
181b:第二邊框 181b: Second border
182:導電肋部 182:Conductive rib
20:外邊界開槽 20: Slotting on the outer boundary
22:電流匯入點 22:Current inflow point
26:開孔 26:Opening
Claims (10)
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