KR100623158B1 - Metal mask produced using laser beam - Google Patents

Metal mask produced using laser beam Download PDF

Info

Publication number
KR100623158B1
KR100623158B1 KR1020040091719A KR20040091719A KR100623158B1 KR 100623158 B1 KR100623158 B1 KR 100623158B1 KR 1020040091719 A KR1020040091719 A KR 1020040091719A KR 20040091719 A KR20040091719 A KR 20040091719A KR 100623158 B1 KR100623158 B1 KR 100623158B1
Authority
KR
South Korea
Prior art keywords
photoresist
metal mask
laser beam
pattern
mask
Prior art date
Application number
KR1020040091719A
Other languages
Korean (ko)
Other versions
KR20060043962A (en
Inventor
박상준
Original Assignee
엘지마이크론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지마이크론 주식회사 filed Critical 엘지마이크론 주식회사
Priority to KR1020040091719A priority Critical patent/KR100623158B1/en
Publication of KR20060043962A publication Critical patent/KR20060043962A/en
Application granted granted Critical
Publication of KR100623158B1 publication Critical patent/KR100623158B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Abstract

메탈시트의 양면을 세정하고 각각 고감도 포토레지스트를 도포하고, 각각의 포토레지스트에 설계된 패턴에 따라 레이저 빔을 조사하여 노광하며, 노광된 포토레지스트를 현상하고, 현상된 포토레지스트에 에칭액을 분사하여 관통공을 형성한 후, 포토레지스트를 박리하여 제조되는 메탈 마스크가 개시된다.Cleaning both sides of the metal sheet and applying high-sensitivity photoresist, respectively, exposing by irradiating a laser beam according to the designed pattern on each photoresist, developing the exposed photoresist, and spraying etching solution onto the developed photoresist. After forming the balls, a metal mask produced by peeling the photoresist is disclosed.

메탈마스크, 레이저빔, 포토마스크, 제조원가, 유연성Metal mask, laser beam, photomask, manufacturing cost, flexibility

Description

레이저 빔을 이용하여 제조된 메탈 마스크{Metal mask produced using laser beam}Metal mask produced using laser beam

도 1은 본 발명에 따른 메탈 마스크를 제조하는 방법을 보여주는 공정도이다.1 is a process chart showing a method of manufacturing a metal mask according to the present invention.

본 발명은 메탈 마스크에 관한 것으로, 특히 레이저 빔을 이용하여 포토레지스트를 노광함으로써 포토마스크를 적용하지 않아 제조원가를 줄일 수 있고 패턴설계나 제조조건의 변화에 신속하게 대응할 수 있는 메탈 마스크에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal mask, and more particularly, to a metal mask that can reduce manufacturing costs by not applying a photomask by exposing a photoresist using a laser beam and can quickly respond to changes in pattern design or manufacturing conditions.

일반적으로, 메탈 마스크(metal mask)는 OLED(Organic Light Emitting Diode) 증착 마스크, CNT(Carbon Nano Tube) 면광원, FED(Field Emission Display) 그리드 마스크 등 다양한 용도로 개발 및 상용화 되고 있다.In general, metal masks have been developed and commercialized for various purposes such as organic light emitting diode (OLED) deposition masks, carbon nano tube (CNT) surface light sources, and field emission display (FED) grid masks.

이러한 메탈 마스크를 제조하기 위하여 종래에는 주로 포토 에칭방법이 적용되어 왔다.In order to manufacture such a metal mask, a photo-etching method has been mainly applied.

종래의 메탈 마스크의 제조방법을 구체적으로 살펴보면, 메탈 시트의 양면에 포토레지스트를 도포하고, 소정의 패턴으로 사전에 제작된 포토 마스크를 이용하여 사진 식각공정에 의해 포토레지스트를 노광한다.Looking at the manufacturing method of a conventional metal mask in detail, the photoresist is applied to both sides of the metal sheet, and the photoresist is exposed by a photolithography process using a photomask prepared in advance in a predetermined pattern.

이어 포토레지스트를 현상하여 노광되지 않은 부분을 제거한다.The photoresist is then developed to remove the unexposed portions.

이후 에칭액을 분사하여 관통공을 형성하고 포토레지스트를 박리하여 메탈 마스크를 제작한다.Thereafter, the etching solution is sprayed to form through holes, and the photoresist is peeled off to prepare a metal mask.

그러나, 이와 같은 종래의 메탈 마스크 제조방법에 따르면, 사진식각공정을 적용하기 때문에 포토 마스크를 별도로 제작해야 한다. However, according to the conventional method of manufacturing a metal mask, a photo mask must be manufactured separately because the photolithography process is applied.

따라서, 제조원가가 증가하고 별도의 일정 및 수율관리가 필요하다는 문제점이 있다.Therefore, there is a problem that the manufacturing cost increases and separate schedule and yield management is required.

또한, 마스크 패턴이 변경되거나 수정되는 경우, 추가 일정이 소요되므로 짧은 기간에 고객의 납기요청을 만족시킬 수 없으며, 특히 마스크 패턴에 여러 번의 수정이나 변경이 가해지는 개발제품에 있어서는 유연성을 확보하지 못한다는 문제점이 있다.In addition, when the mask pattern is changed or modified, additional schedule is required, so it is impossible to satisfy the delivery request of the customer in a short period of time, and in particular, the development product in which several modifications or changes are made to the mask pattern is not secured. Has a problem.

따라서, 본 발명의 목적은 제조공정의 단계가 감소하여 제조원가가 절감되고 마스크 패턴의 수정에 관계없이 추가 일정이 소요되지 않는 제조방법으로 제작되는 메탈 마스크를 제공하는 것이다.Accordingly, it is an object of the present invention to provide a metal mask fabricated by a manufacturing method which reduces manufacturing steps and reduces manufacturing costs and does not require an additional schedule regardless of modification of the mask pattern.

본 발명의 다른 목적은 마스크 패턴에 여러 번의 수정이나 변경이 가해지는 개발제품에 대해서도 유연성을 확보할 수 있는 메탈 마스크 제조방법을 제공하는 것이다. Another object of the present invention is to provide a method of manufacturing a metal mask that can ensure flexibility even for a developed product to which a number of modifications or changes are applied to a mask pattern.                         

본 발명의 또 다른 목적은 상기한 방법으로 제조되는 메탈 마스크를 제공하는 것이다.Another object of the present invention is to provide a metal mask produced by the above method.

본 발명의 다른 목적과 특징들은 이하에 서술되는 바람직한 실시예를 통하여 명확하게 이해될 것이다.Other objects and features of the present invention will be clearly understood through the preferred embodiments described below.

본 발명에 따르면, 메탈시트의 양면을 세정하고 각각 고감도 포토레지스트를 도포하고, 각각의 포토레지스트에 설계된 패턴에 따라 레이저 빔을 조사하여 노광하며, 노광된 포토레지스트를 현상하고, 현상된 포토레지스트에 에칭액을 분사하여 관통공을 형성한 후, 포토레지스트를 박리하여 제조되는 메탈 마스크가 개시된다. According to the present invention, both surfaces of the metal sheet are cleaned, each of which is coated with a high sensitivity photoresist, and irradiated with a laser beam according to a pattern designed on each photoresist, the exposed photoresist is developed, and the developed photoresist is applied. Disclosed is a metal mask produced by spraying an etching solution to form through holes, and then peeling the photoresist.

바람직하게, 레이저 빔의 파장은 350㎚ 내지 450nm일 수 있다. 또한, 액상의 포토레지스트를 스핀코팅 방식으로 도포하거나, 포토레지스트 드라이 필름을 라미네이팅 방식으로 열 압착하여 고감도 포토레지스트를 도포할 수 있다.Preferably, the wavelength of the laser beam may be 350 nm to 450 nm. In addition, the liquid photoresist may be applied by spin coating, or the photoresist dry film may be thermocompressed by a laminating method to apply a high sensitivity photoresist.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 구체적으로 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 따른 메탈 마스크를 제조하는 방법을 보여주는 공정도이다.1 is a process chart showing a method of manufacturing a metal mask according to the present invention.

도 1(a)에 도시된 바와 같이, 메탈시트(10)의 양면을 세정하고 각각 고감도 포토레지스트(20)를 도포한다.As shown in FIG. 1 (a), both surfaces of the metal sheet 10 are cleaned and a high sensitivity photoresist 20 is applied to each.

여기서, 고감도 포토레지스트라는 의미는 노광을 위해 조사되는 광원의 세기 가 작더라도 충분히 노광이 이루어질 수 있을 만큼 감도가 예민한 포토레지스트를 의미한다.Here, the term "high sensitivity photoresist" means a photoresist whose sensitivity is sensitive enough to allow exposure even if the intensity of the light source irradiated for exposure is small.

포토레지스트(20)는 일 예로 대략 8㎛ 이하로 도포된다.The photoresist 20 is applied to, for example, approximately 8 μm or less.

포토레지스트(20)를 도포하는 경우, 액상의 포토레지스트는 스핀코팅 방식으로 도포하고, 포토레지스트 드라이 필름은 라미네이팅 방식으로 열 압착하여 도포할 수 있다.When the photoresist 20 is applied, the liquid photoresist may be applied by spin coating, and the photoresist dry film may be applied by thermal compression using a laminating method.

이어, 도 1(b)과 같이, 양면에 도포된 포토레지스트(20)에 설계된 패턴에 따라 레이저 빔(100)을 조사하여 노광한다. 바람직하게, 조사되는 레이저 빔의 파장은 350㎚ 내지 450nm일 수 있다.Subsequently, as shown in FIG. 1B, the laser beam 100 is irradiated and exposed according to a pattern designed on the photoresist 20 coated on both surfaces. Preferably, the wavelength of the laser beam to be irradiated may be 350nm to 450nm.

패턴 설계는, 예를 들어, 캐드 프로그램을 이용하여 작성되어 파일형태로 레이저 빔을 조사하는 레이저 장치에 전송되며, 레이저 장치에 내장된 마이크로프로세서에 의해 해석되어 작성된 패턴대로 레이저 빔을 조사한다.The pattern design is, for example, created using a CAD program and transmitted to a laser device that irradiates the laser beam in the form of a file, and irradiates the laser beam according to the generated pattern by a microprocessor embedded in the laser device.

이때, 포토레지스트(20)가 네거티브 타입(negative type)이면, 설계된 패턴은 후술하는 관통공이 형성되는 부분을 제외한 부분에 대한 패턴이며, 포토레지스트(20)가 포지티브 타입(positive type)이면, 설계된 패턴은 관통공이 형성되는 부분에 대한 패턴이다. 이 실시예에서는 포토레지스트(20)가 네거티브 타입인 경우를 보여주고 있다.In this case, if the photoresist 20 is a negative type, the designed pattern is a pattern for a portion except for a portion where a through hole to be described later is formed, and if the photoresist 20 is a positive type, the designed pattern Is a pattern for the portion where the through hole is formed. In this embodiment, the photoresist 20 is of a negative type.

결과적으로, 도 1(b)과 같이, 레이저 빔(100)에 의해 노광된 부분(20a)과 노광되지 않은 부분(20b)으로 구별된다.As a result, as shown in Fig. 1B, the portions 20a exposed by the laser beam 100 and the unexposed portions 20b are distinguished.

도 1(c)을 참조하면, 현상에 의해 노광되지 않은 부분(20b)은 제거되고 노광 된 부분(20a)만 남게 된다.Referring to FIG. 1C, the portion 20b that is not exposed by development is removed and only the exposed portion 20a remains.

이와 같이 현상된 포토레지스트(20a)에 에칭액을 분사하여 에칭을 진행함으로써, 도 1(d)과 같이 관통공(30)을 형성한 후, 잔류하는 포토레지스트(20a)를 박리하여 메탈 마스크를 제작한다.The etching solution is sprayed onto the developed photoresist 20a to perform etching, thereby forming the through holes 30 as shown in FIG. 1 (d), and then peeling off the remaining photoresist 20a to produce a metal mask. do.

이와 같은 메탈 마스크 제조방법에 따르면, 포토 마스크를 필요로 하지 않기 때문에 포토 마스크를 제조하기 위한 별도의 공정이 필요하지 않으며, 제조원가가 절감된다. 더욱이, 포토 마스크에 있어서 마스크 패턴의 불량체크나 일정관리 등이 필요하지 않게 된다.According to such a metal mask manufacturing method, since a photo mask is not required, a separate process for manufacturing a photo mask is not required, and manufacturing cost is reduced. In addition, in the photo mask, no defective check of the mask pattern, schedule management, or the like is required.

또한, 마스크 패턴이 수정되거나 변경되어도 이에 따른 포토 마스크를 제작할 필요 없이 레이저 장치에 제공되는 설계패턴만 수정하거나 변경하면 되기 때문에 추가 일정이 소요되지 않으며, 고객의 긴급한 납기요청에도 충분히 대응할 수 있다.In addition, even if the mask pattern is modified or changed, no additional schedule is required because only the design pattern provided to the laser device is modified or changed without the need to manufacture a photo mask according to the mask pattern.

더욱이, 마스크 패턴에 여러 번의 수정이나 변경이 가해지는 개발제품에 대해서도 유연성을 확보할 수 있으며, 개발품과 양산품이 혼재되는 경우에도 적용할 수 있다.In addition, flexibility can be secured even for a developed product in which multiple modifications or changes are made to the mask pattern, and the present invention can be applied even when a developed product and a mass product are mixed.

이상에서는 본 발명의 바람직한 실시예를 중심으로 설명하였지만, 본 발명의 정신을 벗어나지 않는 범위 내에서 다양한 변경이나 변형을 가할 수 있다. 따라서, 본 발명의 범위는 상기한 실시예에 국한되어서는 안되며, 이하에 서술되는 특허청구범위에 의해 결정되어야 한다.Although the above has been described with reference to the preferred embodiments of the present invention, various changes and modifications can be made without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be limited to the above embodiments, but should be determined by the claims described below.

이상에서 설명한 바와 같이, 본 발명에 따르면 포토 마스크를 필요로 하지 않기 때문에 포토 마스크를 제조하기 위한 별도의 공정이 필요하지 않으며, 제조원가가 절감되는 이점이 있고, 포토 마스크에 있어서 마스크 패턴의 불량체크나 일정관리 등이 필요하지 않게 된다는 이점이 있다.As described above, according to the present invention, there is no need for a separate process for manufacturing the photo mask, since there is no need for a photo mask, and there is an advantage in that manufacturing cost is reduced. There is an advantage that no schedule management is required.

또한, 마스크 패턴이 수정되거나 변경되어도 이에 따른 포토 마스크를 제작할 필요 없이 레이저 장치에 제공되는 설계패턴만 수정하거나 변경하면 되기 때문에 추가 일정이 소요되지 않으며, 고객의 긴급한 납기요청에도 충분히 대응할 수 있다는 이점이 있다.In addition, even if the mask pattern is modified or changed, no additional schedule is required because only the design pattern provided to the laser device is modified or changed without the need to manufacture a photo mask accordingly, and it is possible to fully respond to urgent delivery requests from customers. have.

더욱이, 마스크 패턴에 여러 번의 수정이나 변경이 가해지는 개발제품에 대해서도 유연성을 확보할 수 있으며, 개발품과 양산품이 혼재되는 경우에도 적용할 수 있다는 이점이 있다.In addition, it is possible to secure flexibility even for a developed product in which multiple modifications or changes are made to the mask pattern, and there is an advantage that the present invention can be applied even when the developed product and the mass product are mixed.

Claims (3)

세정된 메탈시트의 양면에 각각 고감도 포토레지스트를 도포하고, 여기에 설계된 패턴에 따라 레이저 빔을 조사하여 노광 및 현상하고, 상기 현상된 포토레지스트에 에칭액을 분사하여 관통공을 형성한 후, 상기 포토레지스트를 박리하여 제조되는 것을 특징으로 하는 메탈 마스크. High sensitivity photoresist is applied to both surfaces of the cleaned metal sheet, the laser beam is exposed and developed according to a pattern designed therein, and an etching solution is sprayed onto the developed photoresist to form through holes. A metal mask produced by peeling a resist. 제 1 항에 있어서, 상기 레이저 빔의 파장은 350㎚ 내지 450nm인 것을 특징으로 하는 메탈 마스크.The metal mask of claim 1, wherein a wavelength of the laser beam is 350 nm to 450 nm. 제 1 항에 있어서, 액상의 포토레지스트를 스핀코팅 방식으로 도포하거나, 포토레지스트 드라이 필름을 라미네이팅 방식으로 열 압착하여 상기 고감도 포토레지스트를 도포하는 것을 특징으로 하는 메탈 마스크. The metal mask of claim 1, wherein a liquid photoresist is applied by spin coating, or the photoresist dry film is thermally compressed by a laminating method to apply the high sensitivity photoresist.
KR1020040091719A 2004-11-11 2004-11-11 Metal mask produced using laser beam KR100623158B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020040091719A KR100623158B1 (en) 2004-11-11 2004-11-11 Metal mask produced using laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040091719A KR100623158B1 (en) 2004-11-11 2004-11-11 Metal mask produced using laser beam

Publications (2)

Publication Number Publication Date
KR20060043962A KR20060043962A (en) 2006-05-16
KR100623158B1 true KR100623158B1 (en) 2006-09-19

Family

ID=37148832

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040091719A KR100623158B1 (en) 2004-11-11 2004-11-11 Metal mask produced using laser beam

Country Status (1)

Country Link
KR (1) KR100623158B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100794675B1 (en) 2007-06-05 2008-01-17 (주)미래화학 Manufacturing method of forming pattern plate and method for manufacturing forming pattern using the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100778540B1 (en) * 2006-06-12 2007-11-22 주식회사 이코니 Method for manufacturing a metal mask and method for assembling the metal mask and a frame
KR100901327B1 (en) * 2007-06-18 2009-06-09 주식회사 티이피 Method for manufacturing of metal mask
CN107849681A (en) 2015-07-17 2018-03-27 凸版印刷株式会社 The manufacture method of metal mask base material, metal mask and metal mask
KR102509663B1 (en) 2015-07-17 2023-03-14 도판 인사츠 가부시키가이샤 Method for producing base for metal masks, method for producing metal mask for vapor deposition, base for metal masks, and metal mask for vapor deposition
JP6805830B2 (en) 2015-07-17 2020-12-23 凸版印刷株式会社 Metal mask base material for vapor deposition, metal mask for vapor deposition, metal mask base material for vapor deposition, and metal mask for vapor deposition
KR102552275B1 (en) 2015-07-31 2023-07-07 삼성디스플레이 주식회사 Manufacturing method for the mask
CN105951040A (en) * 2016-05-03 2016-09-21 上海天马有机发光显示技术有限公司 Mask film block, mask film board and manufacturing method of mask film board

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303248A (en) * 1997-04-28 1998-11-13 Ngk Spark Plug Co Ltd Wiring board having solder bump, manufacture of the wiring board and metal mask for forming solder bump

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303248A (en) * 1997-04-28 1998-11-13 Ngk Spark Plug Co Ltd Wiring board having solder bump, manufacture of the wiring board and metal mask for forming solder bump

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
10303248

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100794675B1 (en) 2007-06-05 2008-01-17 (주)미래화학 Manufacturing method of forming pattern plate and method for manufacturing forming pattern using the same

Also Published As

Publication number Publication date
KR20060043962A (en) 2006-05-16

Similar Documents

Publication Publication Date Title
CA1079566A (en) Method for manufacturing a mask with an aspect ratio>1
EP1630612A3 (en) Method for manufacturing a microstructure, exposure device, and electronic apparatus
TW200419823A (en) Producing self-aligned and self-exposed photoresist patterns on light emitting devices
JP2006523953A5 (en)
KR100623158B1 (en) Metal mask produced using laser beam
JP2005328037A5 (en)
EP1372005A3 (en) Optical integrated circuit and method of fabrication
JP2006133785A5 (en)
JP6714995B2 (en) Method of manufacturing deposition mask
JP4674105B2 (en) Circuit pattern transfer apparatus and method
TW201044115A (en) Method and system for forming a pattern in a semiconductor device, and semiconductor device
US20060134559A1 (en) Method for forming patterns on a semiconductor device
US20050181313A1 (en) Method for forming openings in a substrate using a packing and unpacking process
JP2004235574A (en) Method of forming resist pattern and method of fabricating device
JPS63170917A (en) Formation of fine pattern
US20160204040A1 (en) Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device
JP4830596B2 (en) Resist pattern forming substrate, resist pattern forming method, and panel
TW202138923A (en) Lithography apparatus, patterning system, and method of patterning a layered structure
JP4838646B2 (en) Photomask, exposure apparatus and method
KR20130142739A (en) Method for manufacturing of thin metal substrate and thin metal substrate using the same method
JPH02238457A (en) Formation of thick-film resist pattern
KR920005636B1 (en) Photoresist pattern forming method
US20050084805A1 (en) Method for forming patterned ITO structure by using photosensitive ITO solution
JP2010258291A (en) Light emitting device, image forming device, and method of manufacturing light emitting device
KR100608449B1 (en) Exposing system for semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20101213

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee