TWI761703B - 晶圓載置裝置 - Google Patents

晶圓載置裝置 Download PDF

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TWI761703B
TWI761703B TW108132737A TW108132737A TWI761703B TW I761703 B TWI761703 B TW I761703B TW 108132737 A TW108132737 A TW 108132737A TW 108132737 A TW108132737 A TW 108132737A TW I761703 B TWI761703 B TW I761703B
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focus ring
wafer
cooling plate
plate
mounting
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TW108132737A
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TW202025370A (zh
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竹林央史
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日商日本碍子股份有限公司
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Abstract

本發明的晶圓載置裝置10，其係具備：晶圓載置台12，其具備：晶圓用靜電吸盤14、及晶圓用冷卻板16；聚焦環載置台20，其具備聚焦環用靜電吸盤22、及聚焦環用冷卻板24；及夾鉗構件30，其係配置在聚焦環載置台20的外周。晶圓載置台12、聚焦環載置台20與夾鉗構件30，分別為別的個體。聚焦環用冷卻板24的按壓部24b，係將晶圓用冷卻板凸緣部16a向設置板82按壓。夾鉗構件30，係藉由將凸緣部24a向設置板82，以軸環部32按壓的狀態，以螺栓86連接設置板82，晶圓載置台12及聚焦環載置台20不直接與設置板連接82，而固定在設置板82。

Description

晶圓載置裝置
本發明係關於晶圓載置裝置。
先前為利用電漿對晶圓進行CVD或蝕刻等使用晶圓載置裝置。例如在專利文獻1，揭示一種晶圓載置裝置，其具備：將圓盤狀的中心側金屬基底與圓環狀外周側金屬基底聯接的金屬基底；設在中心側金屬基底頂面的圓盤狀中心側靜電吸盤加熱器；及設在外周側金屬基底的頂面的圓環狀外周側靜電吸盤加熱器。在此晶圓載置裝置，在中心側靜電吸盤加熱器的頂面靜電吸附圓盤狀的晶圓，同時在外周側靜電吸盤加熱器的頂面靜電吸附圓環狀的聚焦環。此外，晶圓的溫度與聚焦環的溫度，係分別個別控制。
另一方面，亦已知如圖6所示晶圓載置裝置510。該晶圓載置裝置510，具備：晶圓載置台512；及聚焦環載置台520，固定在腔體80內的設置板82。晶圓載置台512，具備：晶圓用靜電吸盤514；及晶圓用冷卻板516，其係接著在晶圓用靜電吸盤514之中與載置晶圓W的表面514a相反側的面。對內建在晶圓用靜電吸盤514的靜電電極施加直流電壓，則晶圓W會被靜電吸附在表面514a。聚焦環載置台520，係別於晶圓載置台512，配置在晶圓載置台512外周的環狀構件。聚焦環載置台520，具備：聚焦環用靜電吸盤522；及聚焦環用冷卻板524，其係接著在載置聚焦環用靜電吸盤522之中與聚焦環FR的表面522a的相反側的面。聚焦環FR，係厚度較晶圓W厚的構件，對內建在聚焦環用靜電吸盤522的靜電電極施加直流電壓，則會被靜電吸附在表面522a。晶圓用冷卻板516，具備從接近設置晶圓載置裝置510的設置板82側的端部向半徑外凸出的晶圓用冷卻板凸緣部516a。在晶圓用冷卻板凸緣部516a，設有沿著周方向的複數貫通孔516b。晶圓載置台512，係以將設在聚焦環用冷卻板524背面的凸部524a嵌入貫通孔516b的狀態，藉由從設置板82的背面使螺栓84與凸部524a的螺絲孔連接，經由聚焦環載置台520固定在設置板82。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］日本特開2016-207979號公報
但是，在晶圓載置裝置510，如圖7所示，聚焦環載置台520的表面522a之中螺栓84的正上方附近與其以外的部分會產生高度差，有時表面522a會在周方向起波紋。在圖7，表面522a之中，螺栓84正上方附近(高度較低的部分)以網線表示，其以外的部分(高度較高的部分)以白色表示。當表面522a在周方向起波紋，則即使欲藉由聚焦環用靜電吸盤522，將聚焦環FR吸附在表面522a，由於聚焦環FR有厚度，故只有部分吸附，而有難以調整聚焦環FR的溫度的問題。
本發明係為解決如此課題而完成，以防止聚焦環載置面在周方向起波紋為主要目標。
本發明的晶圓載置裝置，其係具備： 晶圓載置台，其具備：晶圓用靜電吸盤、及安裝在與該晶圓用靜電吸盤的晶圓載置面的相反側的面的晶圓用冷卻板； 聚焦環載置台，其係別於上述晶圓載置台，配置在上述晶圓載置台的外周，具備聚焦環用靜電吸盤、及安裝在與該聚焦環用靜電吸盤的聚焦環載置面的相反側的面的聚焦環用冷卻板；及夾鉗構件，其係別於上述聚焦環載置台，配置在上述聚焦環載置台的外周，上述晶圓用冷卻板，具備從接近設置上述晶圓載置裝置的設置板側端部的外周面向半徑外凸出的晶圓用冷卻板凸緣部，上述聚焦環用冷卻板，具備將上述晶圓用冷卻板凸緣部向設置板按壓的按壓部，及接近上述設置板側端部的外周面向半徑外凸出的聚焦環用冷卻板凸緣部，上述夾鉗構件，藉由將聚焦環用冷卻板凸緣部向上述設置板按壓的狀態，以連接具連接在上述設置板，以不直接將上述晶圓載置台及上述聚焦環載置台與上述設置板連接，而固定在上述設置板。
以該晶圓載置裝置，夾鉗構件，係藉由將聚焦環用冷卻板凸緣部向設置板按壓的狀態，以連接具連接在設置板，以不直接將晶圓載置台及聚焦環載置台與設置板連接，而固定在設置板。因此，夾鉗構件可能有時在連接具附近與其以外的部分高度不同而在周方向起波紋。但是，由於聚焦環載置台並不是直接以連接具連接，而是利用夾鉗構件的按壓力固定在設置板，故聚焦環載置面會變得大致平坦。如此，根據本發明的晶圓載置裝置，能夠防止聚焦環載置面在周方向起波紋。結果，可藉由聚焦環用靜電吸盤，將有厚度的聚焦環確實吸附在聚焦環載置面。
在本發明的晶圓載置裝置，上述夾鉗構件，可為一個環形構件，亦可為複數圓弧狀構件，以環形狀排列所構成。總之，均可得到上述效果。惟，前者與後者相比，由於施加在聚焦環用冷卻板上的按壓力更容易分散，故以前者較佳。
在本發明的晶圓載置裝置，亦可在上述晶圓用冷卻板的上述晶圓 用冷卻板凸緣部與上述聚焦環用冷卻板的上述按壓部之間夾著隔熱間隔器。如此，可抑制聚焦環用冷卻板對晶圓溫度控制的影響，或晶圓用冷卻板對聚焦環的溫度控制的影響。結果，能夠分別獨立進行晶圓的溫度控制與聚焦環的溫度控制。
在本發明的晶圓載置裝置，上述聚焦環載置面，可作成能抵銷藉由上述夾鉗構件使上述聚焦環用冷卻板凸緣部向上述設置板按壓時所生成與上述聚焦環載置面的內周部與外周部的高度梯度的傾斜面。如此，能夠使晶圓載置裝置固定在設置板上的狀態的聚焦環載置面更平坦。
在本發明的晶圓載置裝置，上述晶圓用冷卻板的上述晶圓用冷卻板凸緣部與上述聚焦環用冷卻板的上述按壓部之間夾著隔熱間隔器，上述隔熱間隔器，可具有可以抵銷藉由上述夾鉗構件使上述聚焦環用冷卻板凸緣部向上述設置板按壓時所生成與上述聚焦環載置面的內周部與外周部的高度梯度的傾斜厚度。如此，能夠得到藉由隔熱間隔器，分別獨立進行晶圓的溫度控制與聚焦環的溫度控制的效果，及能夠使晶圓載置裝置固定在設置板上的狀態的聚焦環載置面更平坦的效果。
在本發明的晶圓載置裝置，配置在在上述聚焦環用冷卻板與上述設置板之間的上述聚焦環用冷卻板的內周側的密封環，可與配置在上述晶圓用冷卻板與上述設置板之間的上述晶圓用冷卻板的外周側的密封環共同化。此類晶圓載置裝置，有時會使晶圓用冷卻板與設置板之間的氣氛，與聚焦環用冷卻板與設置板之間的氣氛互相獨立。此時，一般在晶圓用冷卻板與設置板之間的晶圓用冷卻板的外周側配置密封環，同時在聚焦環用冷卻板與設置板之間的聚焦環用冷卻板的內周側配置其他的密封環。但是，如上述所述將該等2個密封環共同化，則與個別設置2個密封環的情形相比，能夠減低密封環的空間及成本，且能夠減少用於得到密封性所需對密封環的按壓力(藉由夾鉗構件的按壓力)。
將本發明的較佳的實施形態，邊參照圖面說明如下。圖1係固定在設置板82的晶圓載置裝置10的縱剖面圖，圖2係晶圓載置裝置10的俯視圖。
晶圓載置裝置10，係使用於利用電漿對晶圓W進行CVD或蝕刻等，固定在設於半導體製程用腔體80(參照圖3)的設置板82。該晶圓載置裝置10，具備：晶圓載置台12；聚焦環載置台20；及夾鉗構件30。
晶圓載置台12，具備：晶圓用靜電吸盤14；及晶圓用冷卻板16。晶圓用冷卻板16，係經由接合板片15接著在晶圓用靜電吸盤14的與晶圓載置面的表面14a的相反側的背面14b。
晶圓用靜電吸盤14，係在陶瓷基體14c，埋設靜電電極14d及電阻發熱體14e。
陶瓷基體14c，係由氮化鋁及碳化矽、氮化矽、氧化鋁等所代表的陶瓷材料所組成的圓盤狀的板。在陶瓷基體14c的表面14a，有藉由壓紋加工形成未示於圖的複數凹凸。設在表面14a的凹部與載置在表面14a的晶圓W(參照圖3)之間，可從未示於圖的氣體供給路供給熱傳導用的氣體(例如He氣)。氣體供給路，係設置成貫通設置板82、晶圓用冷卻板16、接合板片15及晶圓用靜電吸盤14。
靜電電極14d，係以具有導電性的網或板製作，與表面14a平行(包含大體上平行的情形，以下相同)設置。靜電電極14d的背面，連接貫通設置板82、晶圓用冷卻板16及接合板片15，而插入陶瓷基體14c的未示於圖的供電棒。在靜電電極14d，經由該供電棒施加直流電壓。
電阻發熱體14e，係以具有導電性的線圈或印刷圖形製作，在表面14a的全面以一筆畫的要領從一端配線到另一端。電阻發熱體14e的一端與另一端，連接貫通設置板82、晶圓用冷卻板16、及接合板片15，而插入陶瓷基體14c的未示於圖的一對供電棒。在電阻發熱體14e，經由該供電棒施加電壓。
晶圓用冷卻板16，係由鋁或鋁合金等所代表的金屬所組成的圓盤狀的板，在內部具備冷媒可循環的未示於圖的冷媒通道。該冷媒通道，連接貫通設置板82的冷媒供給路及冷媒排放路，從冷媒排放路排放的冷媒，在調整溫度之後再送回冷媒供給路。晶圓用冷卻板16，具備從晶圓用冷卻板16下端部(接近設置板82側的端部)的外周面向半徑外凸出的晶圓用冷卻板凸緣部16a。
聚焦環載置台20，係別於晶圓載置台12，配置在晶圓載置台12的外周。聚焦環載置台20，具備：聚焦環用靜電吸盤22；及聚焦環用冷卻板24。聚焦環用冷卻板24，係經由接合板片25接著在聚焦環用靜電吸盤22的與聚焦環載置面的表面22a的相反側的面的背面22b。
聚焦環用靜電吸盤22，係在陶瓷基體22c，埋設靜電電極22d及電阻發熱體22e。陶瓷基體22c係以與陶瓷基體14c同樣的材料組成的環狀的板。陶瓷基體22c的表面22a，有藉由壓紋加工形成複數凹凸。設在表面22a的凹部與載置在表面22a的聚焦環FR(參照圖3)之間，可從未示於圖的氣體供給路供給熱傳導用的氣體(例如He氣)。氣體供給路，係設置成貫通設置板82、聚焦環用冷卻板24、接合板片25及聚焦環用靜電吸盤22。
靜電電極22d，係以具有導電性的網或板製作，與表面22a平行設置。靜電電極22d的背面，連接貫通設置板82、聚焦環用冷卻板24及接合板片25，而插入陶瓷基體22c的未示於圖的供電棒。在靜電電極22d，經由該供電棒施加直流電壓。
電阻發熱體22e，係以具有導電性的線圈或印刷圖形製作，在表面22a的全面以一筆畫的要領從一端配線到另一端。電阻發熱體22e的一端與另一端，連接貫通設置板82、聚焦環用冷卻板24、及接合板片25，而插入陶瓷基體22c的未示於圖的一對供電棒。在電阻發熱體22e，經由該供電棒施加電壓。
聚焦環用冷卻板24，係由鋁或鋁合金等所代表的金屬所組成的圓盤狀的板，在內部具備冷媒可循環的未示於圖的冷媒通道。這該冷媒通道，連接貫通設置板82的冷媒供給路及冷媒排放路，從冷媒排放路排放的冷媒，在調整溫度之後再送回冷媒供給路。聚焦環用冷卻板24，具備從聚焦環用冷卻板24的下端部(接近設置板82側的端部)的外周面向半徑外凸出的聚焦環用冷卻板凸緣部24a。聚焦環用冷卻板24，具備從聚焦環用冷卻板24的上端部(離設置板82較遠側的端部) 的外周面向半徑外凸出的環狀按壓部24b。按壓部24b，經由隔熱間隔器40，係可將晶圓用冷卻板凸緣部16a向設置板82按壓的構件。隔熱間隔器40，係例如以氧化鋯或樹脂等的熱阻大的材料所製作的環形構件。
夾鉗構件30，係別於聚焦環載置台20，配置在聚焦環載置台20的外周的環狀構件。夾鉗構件30，係以Al、Ti、SUS、SiSiCTi(Si、SiC及Ti的金屬母材複合材料)、其他的非磁性金屬或合金製作。夾鉗構件30，具備從夾鉗構件30的上端部(離設置板82較遠側的端部)的內周面向半徑內凸出的環狀軸環部32。軸環部32，係可將聚焦環用冷卻板凸緣部24a向設置板82按壓的構件。夾鉗構件30，係如圖2所示沿著周方向以等間隔具有複數(在此為12個)貫通孔34。夾鉗構件30，擔任將晶圓載置台12及聚焦環載置台20以不直接與設置板82連接而固定在設置板82的角色。以下說明固定步驟的一例。首先，將在晶圓載置台12配置在設置板82的既定位置，將環狀的隔熱間隔器40放在該晶圓載置台12的晶圓用冷卻板凸緣部16a的表面。接著，將聚焦環載置台20，以聚焦環載置台20的按壓部24b覆蓋隔熱間隔器40表面設置在設置板82。接著，將夾鉗構件30，以夾鉗構件30的軸環32覆蓋聚焦環載置台20的聚焦環用冷卻板凸緣部24a的表面設置在設置板82。以此狀態，將螺栓86插通夾鉗構件30的各貫通孔34，將各螺栓86扭進設置板82的螺絲孔而連接。於是，夾鉗構件30，以軸環部32使聚焦環用冷卻板凸緣部24a向設置板82按壓的狀態，以螺栓86與設置板82連接。藉此，晶圓載置台12及聚焦環載置台20，以不與設置板82直接連接而固定在設置板82。
在晶圓用冷卻板16的背面與設置板82的表面之間，適宜配置O型環。例如，在圖1為使晶圓用冷卻板16的背面與設置板82的表面之間的氣氛與其周圍氣氛呈獨立的狀態，沿著晶圓用冷卻板16的背面的外周配置O型環18。另外，在晶圓用冷卻板16的背面與設置板82的表面之間之中，亦可在插通用於對靜電電極14d或電阻發熱體14e施加電壓的各供電棒的插通路周圍配置O型環，亦可在對晶圓用冷卻板16的未示於圖的冷媒通道供給冷媒的冷媒供給路或從冷媒通道排放冷媒的冷媒排放路周圍配置O型環。
在聚焦環用冷卻板24的背面與設置板82的表面之間，亦可適宜配置O型環。例如，在圖1為使聚焦環用冷卻板24的背面與設置板82的表面之間的氣氛與其周圍氣氛呈獨立的狀態，分別沿著聚焦環用冷卻板24的背面的內周及外周配置O型環26、28。另外，在聚焦環用冷卻板24的背面與設置板82的表面之間之中，亦可插通用於對靜電電極22d或電阻發熱體22e施加電壓的各供電棒的插通路周圍配置O型環，亦可在對聚焦環用冷卻板24的未示於圖的冷媒通道供給冷媒的冷媒供給路或從冷媒通道排放冷媒的冷媒排放路周圍配置O型環。
接著，使用圖3說明關於晶圓載置裝置10的使用例。腔體80，具備：用於在內部載置晶圓設置裝置10的設置板82。在設置板82，設置如上所述的晶圓載置裝置10。在腔體80的頂板面，配置有將製程氣體從多數噴射孔對腔體80內釋出的噴灑頭90。
在晶圓載置裝置10的晶圓載置面14a，載置圓盤狀的晶圓W。晶圓W，係藉由對晶圓用靜電吸盤14的靜電電極14d施加電壓，靜電吸附在晶圓載置面14a。晶圓W的溫度，可藉由調節對晶圓用靜電吸盤14的電阻發熱體14e供給的電力或對晶圓用冷卻板16的未示於圖的冷媒通道供給的冷媒溫度來控制。此時，在晶圓W與晶圓載置面14a的未示於圖的凹部之間，供給用於使熱傳導良好的He氣。晶圓W的溫度控制，係以未示於圖的溫度檢測傳感器檢測晶圓W的溫度，藉由反饋使其溫度成為目標溫度而執行。
在晶圓載置裝置10的聚焦環載置面22a，載置有聚焦環FR。聚焦環FR，以避免干涉晶圓W地沿著上端部的內周具有段差。聚焦環FR，藉由對聚焦環用靜電吸盤22的靜電電極22d施加電壓，靜電吸附在聚焦環載置面22a。聚焦環FR的溫度，可藉由調節對聚焦環用靜電吸盤22的電阻發熱體22e提供的電力或對聚焦環用冷卻板24的未示於圖的冷媒通道供給的冷媒溫度來控制。此時，在聚焦環FR與聚焦環載置面22a的未示於圖的凹部之間，供給用於使熱傳導良好的He氣。聚焦環FR的溫度控制，係以未示於圖的溫度檢測傳感器檢測聚焦環FR的溫度，藉由反饋使其溫度成為目標溫度而執行。
以此狀態，將腔體80的內部設定成既定的真空氣氛(或減壓氣氛)，邊從噴灑頭90提供製程氣體，邊在晶圓載置台12的晶圓用冷卻板16與噴灑頭90之間供給高頻電力產生電漿。然後，利用該電漿對晶圓施以CVD成膜或進行蝕刻。再者，設置板82的下方空間為大氣氣氛。
隨著晶圓W被電漿處理，聚焦環FR亦會消耗，惟由於聚焦環FR的厚度較厚，故聚焦環FR的交換處理，可在處理多片晶圓W之後進行。
以如上所說明的晶圓載置裝置10，夾鉗構件30，以將聚焦環用冷卻板凸緣部24a向設置板82按壓的狀態，藉由螺栓86連接設置板82，將晶圓載置台12及聚焦環載置台20不以直接連接設置板82而固定在設置板82。因此，夾鉗構件30，可能會在螺栓86附近及其以外的部分高度不同而在周方向起波紋。但是，聚焦環載置台20並沒有直接以螺栓連接，而利用夾鉗構件30按壓力固定在設置板82，故聚焦環載置面22a呈大致平坦。如此，根據本實施形態的晶圓載置裝置10，能夠防止聚焦環載置面22a在周方向起波紋。結果，可藉由聚焦環用靜電吸盤22，將具有厚度的聚焦環FR確實吸附在聚焦環載置面22a。藉此，變得容易調整聚焦環FR的溫度，亦能夠防止供給聚焦環FR背面的He氣洩漏。
此外，由於夾鉗構件30，係一個環形構件，故施加於聚焦環用冷卻板24上的按壓力容易分散。因此，更容易防止聚焦環載置面22a在周方向起波紋。
再者，在晶圓用冷卻板16的晶圓用冷卻板凸緣部16a與聚焦環用冷卻板24的按壓部24b之間，夾著隔熱間隔器40。因此，可抑制聚焦環用冷卻板24對晶圓W的溫度控制的影響或晶圓用冷卻板16對聚焦環FR的溫度控制的的影響。結果，能夠分別獨立進行晶圓W的溫度控制及聚焦環FR的溫度控制。
再者，本發明並非限定於上述實施形態，只要屬於本發明的技術性範圍，可以各種的態樣實施是不言而喻的。
例如，在上述實施形態，係如圖1所示，沿著晶圓用冷卻板16的背面的外周配置O型環18，分別沿著聚焦環用冷卻板24的背面的內周及外周配置O型環26、28，惟亦可如圖4所示晶圓載置裝置110，將O型環18與O型環26共通化成1個O型環42。在圖4，對與上述的實施形態相同的構成要素賦予相同符號。在圖4，聚焦環用冷卻板24之中，面向設置板82的面24c，及面相晶圓用冷卻板16的面24d的交界所構成的第1角部24e有做倒棱。此外，晶圓用冷卻板16之中，面向設置板82的面16c，及面向聚焦環用冷卻板24的面16d的交界所構成的第2角部16e亦有做倒棱。然後，以接於第1角部24e、第2角部16e、及設置板82的表面3者，配置共同化的O型環42。如此，與如圖1個別設置2個O型環18、26的情形相比，可減去O型環的的空間或成本，且可減少為得密封性所需對O型環的按壓力(以夾鉗構件30的按壓力)。
在上述實施形態，雖然夾鉗構件30係作成一個環狀構件，惟並非特別限定於此，亦可以複數圓弧狀構件環狀排列所構成。例如，亦可圖5所示晶圓載置裝置210，採用4個圓弧狀構件132以環狀排列構成的夾鉗構件130。在圖5，對與上述的實施形態相同的構成要素賦予相同符號。如此，亦可得到與上述實施形態所得同樣的效果。惟，由於夾鉗構件30與夾鉗構件130相比較容易分散施加在聚焦環用冷卻板24的按壓力，故以夾鉗構件30較佳。
在上述實施形態，聚焦環載置面22a係呈大致平坦，但根據情形，聚焦環載置面22a的外周部(圖2的聚焦環載置面22a之網線的部分)產生較內周部(圖2的聚焦環載置面22a之中沒有網線的部分)有時會產生稍微較低的高度梯度。此係，因為夾鉗構件30，將設在聚焦環用冷卻板24的外周側的凸緣部24a向設置板82按壓。因此，亦可預先將聚焦環載置面22a，作成取消該高度梯度的傾斜面。如此，能夠將晶圓載置裝置10固定在設置板82上的狀態的聚焦環載置面22a作成更平坦。或者，取代預先將聚焦環載置面22a做成傾斜面，將隔熱間隔器40的厚度，作成可取消該高度梯度的傾斜面。如此，可得可藉由隔熱間隔器40，分別獨立進行晶圓W的溫度控制與聚焦環FR的溫度控制的效果，及將晶圓載置裝置10固定在設置板82的狀態，使聚焦環載置面22a更平坦的效果。
在上述實施形態，使用埋設靜電電極14d及電阻發熱體14e作為晶圓用靜電吸盤14，惟亦可省略電阻發熱體14e。此點，在聚焦環用靜電吸盤22亦相同。
在上述實施形態，從夾鉗構件30的上面插入螺栓86將設置板82螺合，惟亦可從設置板82的背面插入對夾鉗構件30螺合。
在上述實施形態，在晶圓用冷卻板凸緣部16a的外周面與聚焦環用冷卻板24的內周面之間，亦可配置隔熱間隔器。如此，可更加抑制聚焦環用冷卻板24對晶圓W的溫度控制的影響或晶圓用冷卻板16對聚焦環FR的溫度控制的影響。
在上述實施形態，在晶圓用靜電吸盤14的背面14b，將晶圓用冷卻板16以接合板片15接著，但例如，晶圓用冷卻板16係以Si-SiC-Ti等的陶瓷複合材料製作時，亦可在晶圓用靜電吸盤14的背面14b，藉由TCB(Thermal compression bonding：熱壓接合)接合晶圓用冷卻板16。TCB，係在兩個接合對象構件之間夾入金屬接合材，以金屬接合材的固相線溫度以下的溫度加熱的狀態，將兩個構件加壓接合的習知方法。此點，在聚焦環用冷卻板24亦相同。
在上述實施形態，亦可設置升降晶圓W的升降針。此時，插通升降針的插通孔，設置成可貫通設置板82、晶圓用冷卻板16、接合板片15及晶圓用靜電吸盤14即可。
本申請案係基於西元2018年9月13日申請的日本專利申請2018-171405號案主張優先權，且其全部內容以參考資料包含於本說明書中。 [產業上的可利性]
本發明，可利用在例如對晶圓進行CVD或蝕刻等的晶圓載置裝置。
10、110、210:晶圓載置裝置 12:晶圓載置台 130:夾鉗構件 132:圓弧狀構件 14:晶圓用靜電吸盤 14a:晶圓載置面 14b:背面 14c:陶瓷基體 14d:靜電電極 14e:電阻發熱體 15:接合板片 16:晶圓用冷卻板 16a:晶圓用冷卻板凸緣部 16c、16d:面 16e:第2角部 18:O型環 20:聚焦環載置台 22:聚焦環靜電吸盤 22a:聚焦環載置面 22b:背面 22c:陶瓷基體 22d:靜電電極 22e:電阻發熱體 24:聚焦環用冷卻板 24a:聚焦環用冷卻板凸緣部 24b:按壓部 24c、24d:面 24e:第1角部 25:接合板片 26、28:O型環 30:夾鉗構件 32:軸環 34:貫通孔 40:隔熱間隔器 42:O型環 82:設置板 84:螺栓 86:螺栓 90:噴灑頭 510:晶圓載置裝置 512:晶圓載置台 514:晶圓用靜電吸盤 514a:表面 516:晶圓用冷卻板 516a:晶圓用冷卻板凸緣部 516b:貫通孔 520:聚焦環載置台 522:聚焦環用靜電吸盤 522a:表面 524:聚焦環用冷卻板 524a:凸部 FR:聚焦環 W:晶圓
［圖1］係固定在設置板82上的晶圓載置裝置10的縱剖面圖。 ［圖2］係晶圓載置裝置10的俯視圖。 ［圖3］係使用晶圓載置裝置10處理晶圓W時的使用說明圖。 ［圖4］係晶圓載置裝置110的縱剖面圖。 ［圖5］係晶圓載置裝置210的俯視圖。 ［圖6］係使用晶圓載置裝置510處理晶圓W時的使用說明圖。 ［圖7］係晶圓載置裝置510的俯視圖。
10:晶圓載置裝置
12:晶圓載置台
14:晶圓用靜電吸盤
14a:晶圓載置面
14b:背面
14c:陶瓷基體
14d:靜電電極
14e:電阻發熱體
15:接合板片
16:晶圓用冷卻板
16a:晶圓用冷卻板凸緣部
18:O型環
20:聚焦環載置台
22:聚焦環靜電吸盤
22a:聚焦環載置面
22b:背面
22c:陶瓷基體
22d:靜電電極
22e:電阻發熱體
24:聚焦環用冷卻板
24a:聚焦環用冷卻板凸緣部
24b:按壓部
25:接合板片
26、28:O型環
30:夾鉗構件
32:軸環
34:貫通孔
40:隔熱間隔器
82:設置板
86:螺栓

Claims (7)

  1. 一種晶圓載置裝置，其係具備：晶圓載置台，其具備：晶圓用靜電吸盤、及安裝在與該晶圓用靜電吸盤的晶圓載置面的相反側的面的晶圓用冷卻板；聚焦環載置台，其係別於上述晶圓載置台，配置在上述晶圓載置台的外周，具備聚焦環用靜電吸盤、及安裝在與該聚焦環用靜電吸盤的聚焦環載置面的相反側的面的聚焦環用冷卻板；及夾鉗構件，其係別於上述聚焦環載置台，配置在上述聚焦環載置台的外周，上述晶圓用冷卻板，具備從接近設置上述晶圓載置裝置的設置板側端部的外周面向半徑外凸出的晶圓用冷卻板凸緣部，上述聚焦環用冷卻板，具備將上述晶圓用冷卻板凸緣部向設置板按壓的按壓部，及接近上述設置板側端部的外周面向半徑外凸出的聚焦環用冷卻板凸緣部，上述夾鉗構件，藉由將聚焦環用冷卻板凸緣部向上述設置板按壓的狀態，以連接具連接在上述設置板，以不直接將上述晶圓載置台及上述聚焦環載置台直接與上述設置板連接，而固定在上述設置板。
  2. 如申請專利範圍第1項所述之晶圓載置裝置，其中上述夾鉗構件係一個環形構件。
  3. 如申請專利範圍第1項所述之晶圓載置裝置，其中上述夾鉗構件係複數圓弧狀構件以環形狀排列所構成。
  4. 如申請專利範圍第1至3項之任何一項所述之晶圓載置裝置，其中上述晶圓用冷卻板的上述晶圓用冷卻板凸緣部與上述聚焦環用冷卻板的上述按壓部之間夾著隔熱間隔器。
  5. 如申請專利範圍第1至3項之任何一項所述之晶圓載置裝置，其中 上述聚焦環載置面，係作成可以抵銷藉由上述夾鉗構件使上述聚焦環用冷卻板凸緣部向上述設置板按壓時所生成與上述聚焦環載置面的內周部與外周部的高度梯度的傾斜面。
  6. 如申請專利範圍第1至3項之任何一項所述之晶圓載置裝置，其中上述晶圓用冷卻板的上述晶圓用冷卻板凸緣部與上述聚焦環用冷卻板的上述按壓部之間夾著隔熱間隔器，上述隔熱間隔器，具有可以抵銷藉由上述夾鉗構件使上述聚焦環用冷卻板凸緣部向上述設置板按壓時所生成與上述聚焦環載置面的內周部與外周部的高度梯度的傾斜厚度。
  7. 如申請專利範圍第1至3項之任何一項所述之晶圓載置裝置，其中配置在在上述聚焦環用冷卻板與上述設置板之間的上述聚焦環用冷卻板的內周側的密封環，與配置在上述晶圓用冷卻板與上述設置板之間的上述晶圓用冷卻板的外周側的密封環共同化。
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