TWI760394B - 用於半導體元件製造的晶圓邊緣升降銷設計 - Google Patents
用於半導體元件製造的晶圓邊緣升降銷設計 Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Abstract
本說明書係描述用於製造半導體元件之設備的晶圓邊緣升降銷。該晶圓邊緣升降銷包含一頂部,該頂部包含一凹槽部分,該凹槽部分具有用以支撐晶圓的一水平朝上表面以及用以橫向限制該晶圓之一垂直傾斜表面,其中該凹槽部分沿著一半徑被水平地掃掠而遠離該晶圓;一基部,位於該頂部下方,該基部的直徑大於橫跨該凹槽部分之該頂部的直徑; 以及一底部,其直徑小於該基部的直徑。 該設備包含於其中處理該晶圓之一處理室,於其上裝載該晶圓之一卡盤組件,以及複數個至少三個晶圓邊緣升降銷,用以將該晶圓上下移動。
Description
相關申請案的交互參照
本申請案係基於2016年12月7日所提申之美國臨時專利申請案第62 / 431,175號,並主張其優先權,其所有內容乃併入以供參照。
本發明係關於一種用以製造半導體元件之設備,尤其是關於在處理室中將晶圓上下移動的晶圓邊緣升降銷。
晶圓邊緣升降銷係用於半導體業中舉升/降低晶圓而往返卡盤組件,以獲得用於末端作用器(例如機器手臂)拿取/放置晶圓的間隙。 邊緣升降銷設計的一個問題是需要確保晶圓升降機構不會將晶圓掉落,並且邊緣升降銷相對於晶圓邊緣的橫向位置是非常重要的。 為了確保晶圓不會掉落,邊緣升降銷乃定位在距離卡盤組件邊緣千分之一英寸內。 所涉及的處理系統元件(即升降板、升降銷和卡盤組件)的容差分析揭示出干擾的可能性。
本說明書係描述用於製造半導體元件之設備的晶圓邊緣升降銷。該晶圓邊緣升降銷包含一頂部,該頂部包含一凹槽部分,該凹槽部分具有用以支撐晶圓的一水平朝上表面以及用以橫向限制該晶圓之一垂直傾斜表面,其中該凹槽部分沿著一半徑被水平地掃掠而遠離該晶圓。該晶圓邊緣升降銷更包含一基部,其位於該頂部下方,該基部的直徑大於橫跨該凹槽部分之該頂部的直徑; 以及一底部,其直徑小於該基部的直徑。
本說明書係描述一種使用晶圓來製造半導體元件之設備。該設備包含一處理室,於其中處理該晶圓;一卡盤組件,於其上裝載該晶圓;以及複數個至少三個晶圓邊緣升降銷,用以將該晶圓上下移動。該複數個至少三個晶圓邊緣升降銷中的每一個包含一頂部,該頂部包含一凹槽部分,該凹槽部分具有用以支撐晶圓的一水平朝上表面以及用以橫向限制該晶圓之一垂直傾斜表面,其中該凹槽部分沿著一半徑被水平地掃掠而遠離該晶圓;一基部,位於該頂部下方,該基部之直徑乃大於橫跨該凹槽部分之該頂部的直徑; 以及一底部,其直徑小於該基部的該直徑。
本發明之一實施例描述一三個晶圓邊緣升降銷,其用以支撐位於處理系統之處理室中的晶圓。每一晶圓邊緣升降銷的橫向位置均可相對於該晶圓以及卡盤組件而輕易調整,且該位置調整可以在所有其他組件工作完成之後在處理室中進行。不論該晶圓邊緣升降銷相對於晶圓邊緣之晶圓對準槽口的位置為何,該晶圓邊緣升降銷系統均可維持該晶圓。該可調整邊緣升降銷系統利用一般加工製程即可輕易製造。
圖1A顯示一升高側視圖,說明根據本發明之一實施例的晶圓邊緣升降銷10。在一例中,晶圓邊緣升降銷10可以由聚二醚酮(PEEKTM
)塑膠所製造。晶圓邊緣升降銷10具有一頂部17、一圓形基部16以及一圓形底部15。頂部17包含一凹槽部分12,該凹槽部分12具有用以支撐晶圓(未顯示)的一水平朝上表面11以及用以橫向限制該晶圓之一垂直傾斜表面14。垂直傾斜表面14與水平朝上表面11的交點具有大於90度的角度。該凹槽部分12係沿著一大半徑被水平地掃掠而遠離該晶圓。當晶圓邊緣升降銷10繞其基部16而水平旋轉時,凹槽部分12的掃掠輪廓便容許晶圓邊緣升降銷10加大或減小晶圓限制窗。且凹槽部分12的掃掠輪廓具有足夠大的半徑,以防止晶圓邊緣處的晶圓對準槽口落在該凹槽斜面附近。
圖1B顯示另一升高側視圖,說明根據本發明之一實施例的晶圓邊緣升降銷10。位於頂部17下方的基部16具有之直徑32係比橫跨凹槽部分12之頂部17的直徑34大。且,底部15之直徑36係比基部16之直徑32小。在一實施例中,頂部17及基部16之垂直中心線17a並未與底部15之垂直中心線15a對齊,而是被一偏移量19分開。在一實施例中,該偏移量19可介於約0.020英寸至約0.025英寸之間。然而,在其他例子中,偏移量19可以大於約0.025英寸或小於約0.020英寸。根據一實施例,頂部17及基部16之垂直中心線17a可以與底部15之垂直中心線15a對齊,該偏移量19因此為0。
基部16的直徑32係大於橫跨凹槽部分12之頂部17的直徑34,以便增加晶圓邊緣升降銷10的剛度,並在安裝到圖2所示的升降板20時有助於確保晶圓邊緣升降銷10為方正/垂直。晶圓邊緣升降銷10乃利用位於基部16下方之緊密適配的底部15(例如一凸座特徵部)而安裝於升降板20上之一圓形凹陷特徵部(未顯示)。可以使用螺絲(未顯示)來將晶圓邊緣升降銷10之底部15固定至升降板20。回去參照圖1A,於底部15、基部16以及頂部17中之螺孔(未顯示)的末端處,穿過晶圓邊緣升降銷10之側壁21鑽出小孔13,以防止處理室中真空環境的實際洩漏。基部16亦具有扳手板18而可讓晶圓邊緣升降銷10容易在升降板20上被旋轉。當安裝於想要的設備中(例如處理室中)的期間,扳手板18乃提供橫向晶圓容納窗的調整。該調整的完成可以用於補償操作溫度、晶圓直徑、以及製造及組件容差等的變化。當晶圓邊緣升降銷10於升降板20上旋轉時,偏移量19的存在可容許橫向晶圓容納窗的調整量增加。升降板20的定心部分22可用來使升降板20的中心對齊於卡盤組件40的中心,如下面圖4所述。
圖3顯示根據本發明之一實施例之升降板20以及由三個晶圓邊緣升降銷10所支撐之晶圓30。晶圓30可以是例如結晶矽之一半導體材料薄片,用於製造積體電路的電子元件以及用於習知之以晶圓為基礎之太陽能電池中的光伏。晶圓30可以用來當作晶圓30內及晶圓30上方建置之微電子元件之基板,且晶圓30歷經許多微製造製程步驟,例如摻雜或離子植入、蝕刻、各種材料的沉積以及光刻圖案化。在某些例子中,晶圓30可以具有100mm、200mm、300mm或450mm的直徑。
根據本發明的一個實施例,提供了一種使用晶圓製造半導體元件的設備。該設備包括處理晶圓的處理室,其上裝載晶圓的卡盤組件以及用於上下移動晶圓之複數個至少三個晶圓邊緣升降銷。
圖4顯示根據本發明之一實施例中之卡盤組件40、升降板20、以及由三晶圓邊緣升降銷10所舉升至卡盤組件40上方之晶圓30。在組裝期間,晶圓邊緣升降銷10可以在處理室外部期間連接到升降板20。可使每一晶圓邊緣升降銷10的旋轉位置近似,並且僅足夠好到確保它們穿過卡盤組件40之外緣上的間隙槽42。一旦升降板20及卡盤組件40安裝好,晶圓邊緣升降銷10便可以被舉升至升高/傳送位置。此時,可以旋轉晶圓邊緣升降銷10以達到晶圓邊緣升降銷10和卡盤組件40之間的期望間隙。可以使用測隙規來測量間隙。
仍參考圖4,可使用包含三個晶圓邊緣升降銷10的升降板20而將晶圓30從卡盤組件40上升/下降,該三個晶圓邊緣升降銷10乃接觸晶圓30邊緣的底側並橫向限制晶圓30。接觸晶圓30之底側的晶圓末端作用器或機器手臂(未顯示)可用來攜帶晶圓30進入處理室,並將該晶圓30就定位於該三晶圓邊緣升降銷10之上。之後,當晶圓30由該三個晶圓邊緣升降銷10所支撐時,該晶圓末端作用器便可以下降並自處理室退出。接著,三個晶圓邊緣升降銷10可用來將晶圓30降低到卡盤組件40上。且在晶圓30處理完之後,一旦該三個晶圓邊緣升降銷10將晶圓30自卡盤組件40舉升起,該晶圓末端作用器便用來移除晶圓30。
圖5A和5B顯示一頂視圖,說明由晶圓邊緣升降銷10所支撐之晶圓30。晶圓邊緣升降銷10的設計能夠實現垂直晶圓支撐,同時保持一致的橫向容納間隙。如圖5A中所見之晶圓邊緣升降銷10以及圖5B中之旋轉的晶圓邊緣升降銷10,本設計不使用能夠干擾晶圓邊緣污染的主動握把。此可調節之設計係維持一致的橫向容納窗而不損害垂直支撐區域(也就是說,如果向一個方向調整,晶圓30不會從晶圓邊緣升降銷10掉下)。由於凹槽部分12的掃掠輪廓大於晶圓對準槽口38,因此無論晶圓30的晶圓對準槽口38如何對準,該可調整設計亦可發揮作用。凹槽部分12的掃掠輪廓具有足夠大的半徑以防止晶圓對準槽口38座落在凹槽部分12的斜面附近。為了比較,一些其他晶圓邊緣支撐銷設計係使用三對升降銷來適應晶圓對準槽口的位置。
本文已在各種實施例中揭露為了支撐用於製造微電子元件之晶圓的晶圓邊緣升降銷設計。本發明之實施例的前述說明係出於說明及描述的目的而呈現。該說明並非徹底或將本發明限制於所揭露之確切形式。本說明以及下列申請專利範圍所包含之用語僅用於描述性目的,而不應被解釋為限制。鑑於上述教導,熟習相關領域者可理解許多修改和變化是可能的。熟習該領域技術者將識別出圖中所示之各種元件的各種等同組合和替代品。因此,本發明的範圍並非意圖受此詳細描述的限制,而是受到所附申請專利範圍的限制。
10‧‧‧晶圓邊緣升降銷11‧‧‧水平朝上表面12‧‧‧凹槽部分13‧‧‧小孔14‧‧‧垂直傾斜表面15‧‧‧底部15a, 17a‧‧‧垂直中心線16‧‧‧基部17‧‧‧頂部18‧‧‧扳手板19‧‧‧偏移量20‧‧‧升降板21‧‧‧側壁22‧‧‧定心部分30‧‧‧晶圓32, 34, 36‧‧‧直徑38‧‧‧晶圓對準槽口40‧‧‧卡盤組件42‧‧‧間隙槽
透過結合附圖考慮下面的詳細描述,將更容易地獲得對本發明及其伴隨的許多優點的更完整的理解,其中:
圖1A顯示一升高側視圖,說明根據本發明之一實施例的晶圓邊緣升降銷;
圖1B顯示另一升高側視圖,說明根據本發明之一實施例的晶圓邊緣升降銷;
圖2顯示根據本發明之一實施例之升降板及晶圓邊緣升降銷;
圖3顯示根據本發明之一實施例之升降板以及由晶圓邊緣升降銷所支撐之晶圓;
圖4顯示根據本發明之一實施例之卡盤組件、 升降板以及由晶圓邊緣升降銷所舉升至卡盤組件上方之晶圓; 和
圖5A和5B顯示出由晶圓邊緣升降銷所支撐之晶圓的俯視圖。
10‧‧‧晶圓邊緣升降銷
11‧‧‧水平朝上表面
12‧‧‧凹槽部分
13‧‧‧小孔
14‧‧‧垂直傾斜表面
15‧‧‧底部
16‧‧‧基部
17‧‧‧頂部
18‧‧‧扳手板
21‧‧‧側壁
Claims (16)
- 一種用於製造半導體元件之設備的晶圓邊緣升降銷,該晶圓邊緣升降銷包含:一頂部,該頂部包含一凹槽部分,該凹槽部分具有用以支撐晶圓的一水平朝上表面以及用以橫向限制該晶圓之一垂直傾斜表面,其中該凹槽部分沿著一半徑被水平地掃掠而遠離該晶圓,且其中該頂部具有一垂直中心線;一基部,位於該頂部下方,該基部的直徑大於橫跨該凹槽部分之該頂部的直徑,其中該基部具有一垂直中心線;且一底部,其直徑小於該基部的直徑,其中該底部具有一垂直中心線,且其中該頂部及該基部之該等垂直中心線係自該底部之該垂直中心線水平偏移,使得該升降銷之旋轉容許當該升降銷旋轉時由該垂直傾斜表面對該晶圓所提供的橫向限制之調整。
- 根據申請專利範圍第1項之晶圓邊緣升降銷,其中該基部之該垂直中心線以及該底部的該垂直中心線在約0.020英寸至約0.025英寸之間水平偏移。
- 根據申請專利範圍第1項之晶圓邊緣升降銷,其中在該升降銷之該頂部之上的該凹槽部分的掃掠輪廓乃防止該晶圓上的晶圓對準槽口落在該凹槽部分附近。
- 根據申請專利範圍第1項之晶圓邊緣升降銷,其中該垂直傾斜表面及該水平朝上表面的交點具有一大於90度的角度。
- 根據申請專利範圍第1項之晶圓邊緣升降銷,其中該半徑係大到足以防止該晶圓上的晶圓對準槽口落在該凹槽部分之該傾斜面附近。
- 一種用於製造半導體元件之設備的晶圓邊緣升降銷,該晶圓邊緣升降銷包含: 一頂部,該頂部包含一凹槽部分,該凹槽部分具有用以支撐晶圓的一水平朝上表面以及用以橫向限制該晶圓之一垂直傾斜表面,其中該凹槽部分係沿著一半徑被水平地掃掠而遠離該晶圓,其中該垂直傾斜表面及該水平朝上表面的交點具有一大於90度的角度,其中該凹槽部分的掃掠輪廓乃防止該晶圓上的晶圓對準槽口落在該凹槽部分附近,且其中該頂部具有一垂直中心線;一基部,位於該頂部下方,該基部之直徑乃大於橫跨該凹槽部分之該頂部的直徑,其中該基部具有一垂直中心線;且一底部,其直徑小於該基部的該直徑,該基部及該頂部之該等垂直中心線係自該底部之垂直中心線水平偏移,使得該升降銷之旋轉容許當該升降銷旋轉時由該垂直傾斜表面對該晶圓所提供的橫向限制之調整。
- 根據申請專利範圍第6項之晶圓邊緣升降銷,其中該基部之該垂直中心線以及該底部之該垂直中心線在約0.020英寸至約0.025英寸之間水平偏移。
- 根據申請專利範圍第6項之晶圓邊緣升降銷,其中該半徑係大到足以防止該晶圓上的晶圓對準槽口落在該凹槽部分之該傾斜面附近。
- 一種使用晶圓製造半導體元件之設備,該設備包含:一處理室,於其中處理該晶圓;一卡盤組件,在該處理室之中,於其上裝載該晶圓;以及複數個至少三個晶圓邊緣升降銷,用以將該晶圓上下移動,該複數個至少三個晶圓邊緣升降銷中的每一個包含:一頂部,該頂部包含一凹槽部分,該凹槽部分具有用以支撐晶圓的一水平朝上表面以及用以橫向限制該晶圓之一垂直傾斜表面,其中該凹槽部分係沿著一半徑被水平地掃掠而遠離該晶圓,並且其中該頂部具有一垂直中心線; 一基部,位於該頂部下方,該基部之直徑乃大於橫跨該凹槽部分之該頂部的直徑,其中該基部具有一垂直中心線;且一底部,其直徑小於該基部的該直徑,其中該底部具有一垂直中心線,並且其中該頂部及該基部之該等垂直中心線係自該底部之該垂直中心線水平偏移,使得該升降銷之旋轉容許當該升降銷旋轉時由該垂直傾斜表面對該晶圓所提供的橫向限制之調整。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中更包含一升降板,用以支撐該複數個至少三個晶圓邊緣升降銷。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中該升降板包含一定心部分,用以將該升降板的中心與該卡盤組件的中心對齊。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中該卡盤組件之一外緣包含間隙槽,當將該晶圓上下移動時,該複數個至少三個晶圓邊緣升降銷係穿過該間隙槽。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中該基部之該垂直中心線以及該底部之該垂直中心線在約0.020英寸至約0.025英寸之間水平偏移。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中在該頂部之上的該凹槽部分的掃掠輪廓乃防止一晶圓對準槽口落在該凹槽部分附近。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中該垂直傾斜表面及該水平朝上表面的交點具有一大於90度的角度。
- 根據申請專利範圍第9項之使用晶圓製造半導體元件之設備,其中該半徑係大到足以防止該晶圓上的晶圓對準槽口落在該凹槽部分之該傾斜面附近。
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US20130152971A1 (en) * | 2011-12-19 | 2013-06-20 | Hiroshi Kato | Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate treatment method |
US20150279708A1 (en) * | 2014-03-25 | 2015-10-01 | SCREEN Holdings Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
Also Published As
Publication number | Publication date |
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US20180158717A1 (en) | 2018-06-07 |
WO2018106952A1 (en) | 2018-06-14 |
US10418270B2 (en) | 2019-09-17 |
KR20190085148A (ko) | 2019-07-17 |
CN110050336A (zh) | 2019-07-23 |
TW201834140A (zh) | 2018-09-16 |
JP7110195B2 (ja) | 2022-08-01 |
JP2019537273A (ja) | 2019-12-19 |
CN110050336B (zh) | 2023-05-23 |
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