TWI758449B - 檢查流量控制器之方法及處理被處理體之方法 - Google Patents

檢查流量控制器之方法及處理被處理體之方法 Download PDF

Info

Publication number
TWI758449B
TWI758449B TW107110651A TW107110651A TWI758449B TW I758449 B TWI758449 B TW I758449B TW 107110651 A TW107110651 A TW 107110651A TW 107110651 A TW107110651 A TW 107110651A TW I758449 B TWI758449 B TW I758449B
Authority
TW
Taiwan
Prior art keywords
mentioned
time
gas
flow controller
chamber
Prior art date
Application number
TW107110651A
Other languages
English (en)
Chinese (zh)
Other versions
TW201841089A (zh
Inventor
大野久美子
辻本宏
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201841089A publication Critical patent/TW201841089A/zh
Application granted granted Critical
Publication of TWI758449B publication Critical patent/TWI758449B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • G01F1/86—Indirect mass flowmeters, e.g. measuring volume flow and density, temperature or pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Fluid Mechanics (AREA)
  • Drying Of Semiconductors (AREA)
  • Flow Control (AREA)
  • General Engineering & Computer Science (AREA)
TW107110651A 2017-03-30 2018-03-28 檢查流量控制器之方法及處理被處理體之方法 TWI758449B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017068162A JP6670791B2 (ja) 2017-03-30 2017-03-30 流量制御器を検査する方法及び被処理体を処理する方法
JP2017-068162 2017-03-30

Publications (2)

Publication Number Publication Date
TW201841089A TW201841089A (zh) 2018-11-16
TWI758449B true TWI758449B (zh) 2022-03-21

Family

ID=63669833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107110651A TWI758449B (zh) 2017-03-30 2018-03-28 檢查流量控制器之方法及處理被處理體之方法

Country Status (4)

Country Link
US (1) US10480978B2 (cg-RX-API-DMAC7.html)
JP (1) JP6670791B2 (cg-RX-API-DMAC7.html)
KR (1) KR102427994B1 (cg-RX-API-DMAC7.html)
TW (1) TWI758449B (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117043705B (zh) * 2021-03-24 2026-07-31 桑名金属工业株式会社 决定参数的初始值的方法及系统、以及调整质量流量控制装置的方法及系统
KR102868615B1 (ko) * 2021-04-02 2025-10-10 주식회사 원익아이피에스 기판처리방법
JPWO2024024594A1 (cg-RX-API-DMAC7.html) * 2022-07-28 2024-02-01

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW538327B (en) * 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
US20060076060A1 (en) * 2003-01-17 2006-04-13 Fujikin Incorporated Method for flow rate control of clustering fluid and device for flow rate control of clustering fluid employed in the method
TW200938980A (en) * 2007-12-05 2009-09-16 Hitachi Shipbuilding Eng Co Method and device for controlling pressure of vacuum container
TW201010527A (en) * 2008-07-04 2010-03-01 Tokyo Electron Ltd Plasma processing device, plasma processing method, and mechanism for regulating temperature of dielectric window
US20130186471A1 (en) * 2010-07-30 2013-07-25 Fujikin Incorporated Calibration method and flow rate measurement method for flow rate controller for gas supply device
US20140013838A1 (en) * 2011-01-06 2014-01-16 Fujikin Incorporated Flow rate measurement device and flow rate measurement method for flow rate controller for gas supply device
TW201702781A (zh) * 2015-07-10 2017-01-16 派伏塔系統公司 氣流控制方法及裝置
TW201710816A (zh) * 2015-09-14 2017-03-16 東芝股份有限公司 流量調整裝置及處理裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383122A (en) * 1992-06-30 1995-01-17 Union Oil Company Of California Method for analyzing pressure buildup in low pumping rate wells
EP1096351A4 (en) * 1999-04-16 2004-12-15 Fujikin Kk FLUID SUPPLY DEVICE OF THE PARALLEL BYPASS TYPE, AND METHOD AND DEVICE FOR CONTROLLING THE FLOW OF A VARIABLE FLUID TYPE PRESSURE SYSTEM USED IN SAID DEVICE
JP5264039B2 (ja) * 2004-08-10 2013-08-14 東京エレクトロン株式会社 薄膜形成装置及び薄膜形成方法
CN103250233B (zh) * 2010-12-24 2016-01-20 三菱电机株式会社 微晶半导体薄膜制造方法
JP5286430B2 (ja) 2012-03-13 2013-09-11 株式会社フジキン 圧力制御式流量基準器を構成する基準圧力式流量制御器用の耐食性圧力式流量制御器。
JP6346849B2 (ja) * 2014-08-20 2018-06-20 東京エレクトロン株式会社 ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW538327B (en) * 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
US20060076060A1 (en) * 2003-01-17 2006-04-13 Fujikin Incorporated Method for flow rate control of clustering fluid and device for flow rate control of clustering fluid employed in the method
TW200938980A (en) * 2007-12-05 2009-09-16 Hitachi Shipbuilding Eng Co Method and device for controlling pressure of vacuum container
TW201010527A (en) * 2008-07-04 2010-03-01 Tokyo Electron Ltd Plasma processing device, plasma processing method, and mechanism for regulating temperature of dielectric window
US20130186471A1 (en) * 2010-07-30 2013-07-25 Fujikin Incorporated Calibration method and flow rate measurement method for flow rate controller for gas supply device
US20140013838A1 (en) * 2011-01-06 2014-01-16 Fujikin Incorporated Flow rate measurement device and flow rate measurement method for flow rate controller for gas supply device
TW201702781A (zh) * 2015-07-10 2017-01-16 派伏塔系統公司 氣流控制方法及裝置
TW201710816A (zh) * 2015-09-14 2017-03-16 東芝股份有限公司 流量調整裝置及處理裝置

Also Published As

Publication number Publication date
TW201841089A (zh) 2018-11-16
KR20180111631A (ko) 2018-10-11
JP6670791B2 (ja) 2020-03-25
KR102427994B1 (ko) 2022-08-03
US20180286721A1 (en) 2018-10-04
US10480978B2 (en) 2019-11-19
JP2018169910A (ja) 2018-11-01

Similar Documents

Publication Publication Date Title
TWI496514B (zh) A plasma processing apparatus and a plasma processing method, and a computer-readable memory medium
US10229844B2 (en) Gas supply system, gas supply control method and gas replacement method
US7771608B2 (en) Plasma processing method and apparatus
JP5898882B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP6499001B2 (ja) 多孔質膜をエッチングする方法
US10692743B2 (en) Method of inspecting gas supply system
US20040129217A1 (en) Method and apparatus for determining consumable lifetime
JP5377993B2 (ja) プラズマ処理方法
US11231313B2 (en) Method of obtaining output flow rate of flow rate controller and method of processing workpiece
JP5689283B2 (ja) 基板処理方法及びその方法を実行するプログラムを記憶する記憶媒体
EP3726567B1 (en) Plasma etching method and plasma etching apparatus
JP6670791B2 (ja) 流量制御器を検査する方法及び被処理体を処理する方法
KR20200051505A (ko) 배치대 및 기판 처리 장치
KR102841591B1 (ko) 처리 방법 및 플라즈마 처리 장치
WO2014024733A1 (ja) 多層膜をエッチングする方法、及びプラズマ処理装置
JP2016072264A (ja) プラズマ処理方法およびプラズマ処理装置
US20090283502A1 (en) Plasma processing apparatus and control method for plasma processing apparatus
JP2020113652A (ja) 処理方法及びプラズマ処理装置
JP5753866B2 (ja) プラズマ処理方法
JP2013187226A (ja) チャンバーのクリーニング方法、チャンバーのクリーニングの終点検出方法及びチャンバークリーニング装置
JP5189859B2 (ja) プラズマ処理方法
KR101063739B1 (ko) 유도결합 플라즈마 식각 장치
JP6318027B2 (ja) プラズマ処理装置
JP6541406B2 (ja) プラズマ処理装置
KR101066972B1 (ko) 플라즈마처리장치 및 플라즈마처리방법