KR102427994B1 - 유량 제어기를 검사하는 방법 및 피처리체를 처리하는 방법 - Google Patents

유량 제어기를 검사하는 방법 및 피처리체를 처리하는 방법 Download PDF

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KR102427994B1
KR102427994B1 KR1020180036058A KR20180036058A KR102427994B1 KR 102427994 B1 KR102427994 B1 KR 102427994B1 KR 1020180036058 A KR1020180036058 A KR 1020180036058A KR 20180036058 A KR20180036058 A KR 20180036058A KR 102427994 B1 KR102427994 B1 KR 102427994B1
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gas
time
pressure
flow rate
chamber
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KR20180111631A (ko
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구미코 오노
히로시 츠지모토
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도쿄엘렉트론가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • G01F1/86—Indirect mass flowmeters, e.g. measuring volume flow and density, temperature or pressure
    • H01L21/02—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H01L21/67017—
    • H01L21/67242—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Fluid Mechanics (AREA)
  • Drying Of Semiconductors (AREA)
  • Flow Control (AREA)
  • General Engineering & Computer Science (AREA)
KR1020180036058A 2017-03-30 2018-03-28 유량 제어기를 검사하는 방법 및 피처리체를 처리하는 방법 Active KR102427994B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017068162A JP6670791B2 (ja) 2017-03-30 2017-03-30 流量制御器を検査する方法及び被処理体を処理する方法
JPJP-P-2017-068162 2017-03-30

Publications (2)

Publication Number Publication Date
KR20180111631A KR20180111631A (ko) 2018-10-11
KR102427994B1 true KR102427994B1 (ko) 2022-08-03

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KR1020180036058A Active KR102427994B1 (ko) 2017-03-30 2018-03-28 유량 제어기를 검사하는 방법 및 피처리체를 처리하는 방법

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Country Link
US (1) US10480978B2 (cg-RX-API-DMAC7.html)
JP (1) JP6670791B2 (cg-RX-API-DMAC7.html)
KR (1) KR102427994B1 (cg-RX-API-DMAC7.html)
TW (1) TWI758449B (cg-RX-API-DMAC7.html)

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Publication number Priority date Publication date Assignee Title
CN117043705B (zh) * 2021-03-24 2026-07-31 桑名金属工业株式会社 决定参数的初始值的方法及系统、以及调整质量流量控制装置的方法及系统
KR102868615B1 (ko) * 2021-04-02 2025-10-10 주식회사 원익아이피에스 기판처리방법
JPWO2024024594A1 (cg-RX-API-DMAC7.html) * 2022-07-28 2024-02-01

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010004903A1 (en) 1999-04-16 2001-06-28 Tadahiro Ohmi Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus
JP2006052424A (ja) 2004-08-10 2006-02-23 Tokyo Electron Ltd 薄膜形成装置及び薄膜形成方法
US20060076060A1 (en) 2003-01-17 2006-04-13 Fujikin Incorporated Method for flow rate control of clustering fluid and device for flow rate control of clustering fluid employed in the method
WO2012086242A1 (ja) 2010-12-24 2012-06-28 三菱電機株式会社 微結晶半導体薄膜製造方法
US20140013838A1 (en) 2011-01-06 2014-01-16 Fujikin Incorporated Flow rate measurement device and flow rate measurement method for flow rate controller for gas supply device
JP2016046503A (ja) 2014-08-20 2016-04-04 東京エレクトロン株式会社 ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383122A (en) * 1992-06-30 1995-01-17 Union Oil Company Of California Method for analyzing pressure buildup in low pumping rate wells
TW538327B (en) * 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
US8316879B2 (en) * 2007-12-05 2012-11-27 Hitachi Zosen Corporation Method and device for controlling pressure of vacuum container
CN102077320B (zh) * 2008-07-04 2013-01-23 东京毅力科创株式会社 等离子体处理装置、等离子体处理方法和介电体窗的温度调节机构
JP5538119B2 (ja) * 2010-07-30 2014-07-02 株式会社フジキン ガス供給装置用流量制御器の校正方法及び流量計測方法
JP5286430B2 (ja) 2012-03-13 2013-09-11 株式会社フジキン 圧力制御式流量基準器を構成する基準圧力式流量制御器用の耐食性圧力式流量制御器。
KR102371907B1 (ko) * 2015-07-10 2022-03-08 피포탈 시스템즈 코포레이션 가스 흐름 제어 방법 및 장치
JP6615544B2 (ja) * 2015-09-14 2019-12-04 株式会社東芝 流量調整装置及び処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010004903A1 (en) 1999-04-16 2001-06-28 Tadahiro Ohmi Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus
US20060076060A1 (en) 2003-01-17 2006-04-13 Fujikin Incorporated Method for flow rate control of clustering fluid and device for flow rate control of clustering fluid employed in the method
JP2006052424A (ja) 2004-08-10 2006-02-23 Tokyo Electron Ltd 薄膜形成装置及び薄膜形成方法
WO2012086242A1 (ja) 2010-12-24 2012-06-28 三菱電機株式会社 微結晶半導体薄膜製造方法
US20140013838A1 (en) 2011-01-06 2014-01-16 Fujikin Incorporated Flow rate measurement device and flow rate measurement method for flow rate controller for gas supply device
JP2016046503A (ja) 2014-08-20 2016-04-04 東京エレクトロン株式会社 ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法

Also Published As

Publication number Publication date
TW201841089A (zh) 2018-11-16
KR20180111631A (ko) 2018-10-11
JP6670791B2 (ja) 2020-03-25
US20180286721A1 (en) 2018-10-04
TWI758449B (zh) 2022-03-21
US10480978B2 (en) 2019-11-19
JP2018169910A (ja) 2018-11-01

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