JP6913498B2 - 流量制御器の出力流量を求める方法及び被処理体を処理する方法 - Google Patents
流量制御器の出力流量を求める方法及び被処理体を処理する方法 Download PDFInfo
- Publication number
- JP6913498B2 JP6913498B2 JP2017082022A JP2017082022A JP6913498B2 JP 6913498 B2 JP6913498 B2 JP 6913498B2 JP 2017082022 A JP2017082022 A JP 2017082022A JP 2017082022 A JP2017082022 A JP 2017082022A JP 6913498 B2 JP6913498 B2 JP 6913498B2
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- gas
- pressure
- controller
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0658—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a single flow from a plurality of converging flows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/17—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters using calibrated reservoirs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/15—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters specially adapted for gas meters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/01—Control of flow without auxiliary power
- G05D7/0106—Control of flow without auxiliary power the sensing element being a flexible member, e.g. bellows, diaphragm, capsule
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Description
Claims (5)
- ガス供給部の流量制御器の出力流量を求める方法であって、
前記ガス供給部は、
ガスソースに接続される第1の配管と、
前記第1の配管の下流に設けられた流量制御器と、
前記流量制御器の下流に設けられた第2の配管と、
を備え、
前記第2の配管の下流には前記第2の配管内の圧力を調整可能な絞り機構が設けられ、
前記絞り機構の下流にはタンクが設けられ、
前記方法は、
前記絞り機構が開放された状態で、指定された設定流量に応じてその流量が調整されたガスを前記流量制御器から出力する第1の工程と、
前記第1の工程において前記流量制御器からのガスの出力が継続されている状態で、前記第2の配管内の圧力が目標圧力値になるように前記絞り機構を調整する第2の工程と、
前記第2の工程において前記第2の配管内の圧力が前記目標圧力値に設定された後に、前記タンク内の圧力値及び温度値を用いて前記流量制御器の出力流量を求める第3の工程と、
を含む、方法。 - 前記タンクの下流にはバルブが設けられ、
前記第1の工程では、前記絞り機構及び前記バルブが開放された状態で、指定された設定流量に応じてその流量が調整されたガスを前記流量制御器から出力し、
前記第3の工程では、前記第2の配管内の圧力が前記目標圧力値に設定された後に前記バルブを閉鎖し、該バルブが閉鎖された後に、前記流量制御器を介して供給されるガスが溜められる前記タンクを含む流路の既知の容積、前記タンク内の温度値、及び、単位時間あたりの前記タンク内の圧力値の上昇量から、前記流量制御器の出力流量を求める、請求項1に記載の方法。 - 前記タンクの内部空間は、第1の空間と該第1の空間よりも下流に設けられた第2の空間を含み、前記第1の空間及び前記第2の空間は、前記第1の空間内の圧力が前記第2の空間内の圧力の2倍以上になるようにオリフィスを介して接続されており、
前記第3の工程では、前記第1の空間内の圧力値及び温度値から、前記流量制御器の出力流量を求める、請求項1に記載の方法。 - 前記目標圧力値を互いに異なる複数の圧力値に変更しながら、前記第1の工程、前記第2の工程及び前記第3の工程を含むシーケンスを繰り返し実行し、前記複数の圧力値と前記流量制御器の出力流量との関係を定める較正用データを得る、請求項1〜3の何れか一項に記載の方法。
- 基板処理装置を用いて被処理体を処理する方法であって、
前記基板処理装置は、
チャンバを提供するチャンバ本体と、
前記チャンバ内において被処理体を支持するステージと、
前記チャンバ内にガスを供給するためのガス供給部であり、ガスソースに接続される第1の配管と、前記第1の配管の下流に設けられた流量制御器と、前記流量制御器の下流に設けられており、前記チャンバに接続された第2の配管とを含む、該ガス供給部と、
前記チャンバに接続された排気装置と、
前記チャンバと前記排気装置との間に設けられた圧力調整弁と、
を備え、
前記方法は、
前記圧力調整弁によって前記チャンバ内の圧力を、指定された設定圧力に設定する第1の工程と、
複数の圧力値と前記流量制御器の出力流量との関係を定める較正用データに基づいて、前記第2の配管内の圧力値に応じた前記流量制御器の出力流量を求める第2の工程と、
指定された設定流量に対する前記第2の工程において求められた出力流量の誤差が減少するように前記流量制御器のコントロールバルブを制御する第3の工程と、
前記第3の工程によって前記流量制御器から出力されたガスを用いて、前記チャンバ内において前記被処理体を処理する第4の工程と、
を含み、
前記較正用データは請求項4に記載の方法によって得られる、方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017082022A JP6913498B2 (ja) | 2017-04-18 | 2017-04-18 | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 |
KR1020180044040A KR102491983B1 (ko) | 2017-04-18 | 2018-04-16 | 유량 제어기의 출력 유량을 구하는 방법 및 피처리체를 처리하는 방법 |
US15/954,973 US11231313B2 (en) | 2017-04-18 | 2018-04-17 | Method of obtaining output flow rate of flow rate controller and method of processing workpiece |
TW107113152A TWI758463B (zh) | 2017-04-18 | 2018-04-18 | 求出流量控制器之輸出流量之計算方法及處理被處理體之處理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017082022A JP6913498B2 (ja) | 2017-04-18 | 2017-04-18 | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018181102A JP2018181102A (ja) | 2018-11-15 |
JP6913498B2 true JP6913498B2 (ja) | 2021-08-04 |
Family
ID=63790011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017082022A Active JP6913498B2 (ja) | 2017-04-18 | 2017-04-18 | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11231313B2 (ja) |
JP (1) | JP6913498B2 (ja) |
KR (1) | KR102491983B1 (ja) |
TW (1) | TWI758463B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7122102B2 (ja) * | 2017-11-08 | 2022-08-19 | 東京エレクトロン株式会社 | ガス供給システム及びガス供給方法 |
JP6956014B2 (ja) * | 2018-01-09 | 2021-10-27 | 東京エレクトロン株式会社 | ガスの流量を求める方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3701280A (en) * | 1970-03-18 | 1972-10-31 | Daniel Ind Inc | Method and apparatus for determining the supercompressibility factor of natural gas |
JPS51136653A (en) | 1975-05-22 | 1976-11-26 | Ihara Chem Ind Co Ltd | Process for preparing novel organophosphorous compounds |
US5868159A (en) * | 1996-07-12 | 1999-02-09 | Mks Instruments, Inc. | Pressure-based mass flow controller |
US6074691A (en) * | 1997-06-24 | 2000-06-13 | Balzers Aktiengesellschaft | Method for monitoring the flow of a gas into a vacuum reactor |
US6631334B2 (en) * | 2000-12-26 | 2003-10-07 | Mks Instruments, Inc. | Pressure-based mass flow controller system |
US6830061B2 (en) * | 2001-04-27 | 2004-12-14 | Fisher Controls International Llc | Intelligent regulator with input/output capabilities |
US6955072B2 (en) * | 2003-06-25 | 2005-10-18 | Mks Instruments, Inc. | System and method for in-situ flow verification and calibration |
JP4204400B2 (ja) * | 2003-07-03 | 2009-01-07 | 忠弘 大見 | 差圧式流量計及び差圧式流量制御装置 |
US7137400B2 (en) * | 2003-09-30 | 2006-11-21 | Agere Systems Inc. | Bypass loop gas flow calibration |
US6973375B2 (en) * | 2004-02-12 | 2005-12-06 | Mykrolis Corporation | System and method for flow monitoring and control |
US7412986B2 (en) * | 2004-07-09 | 2008-08-19 | Celerity, Inc. | Method and system for flow measurement and validation of a mass flow controller |
US7376520B2 (en) * | 2005-03-16 | 2008-05-20 | Lam Research Corporation | System and method for gas flow verification |
US7461549B1 (en) * | 2007-06-27 | 2008-12-09 | Mks Instruments, Inc. | Mass flow verifiers capable of providing different volumes, and related methods |
US7474968B2 (en) * | 2005-03-25 | 2009-01-06 | Mks Instruments, Inc. | Critical flow based mass flow verifier |
US7757554B2 (en) * | 2005-03-25 | 2010-07-20 | Mks Instruments, Inc. | High accuracy mass flow verifier with multiple inlets |
US7174263B2 (en) * | 2005-03-25 | 2007-02-06 | Mks Instruments, Inc. | External volume insensitive flow verification |
JP2007058352A (ja) * | 2005-08-22 | 2007-03-08 | Asahi Organic Chem Ind Co Ltd | 流体制御装置 |
JP4801726B2 (ja) * | 2006-03-07 | 2011-10-26 | シーケーディ株式会社 | ガス流量検定ユニット付ガス供給ユニット |
KR101501426B1 (ko) * | 2006-06-02 | 2015-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 차압 측정들에 의한 가스 유동 제어 |
US7822570B2 (en) | 2006-11-17 | 2010-10-26 | Lam Research Corporation | Methods for performing actual flow verification |
JP5054500B2 (ja) * | 2007-12-11 | 2012-10-24 | 株式会社フジキン | 圧力制御式流量基準器 |
JP5879074B2 (ja) * | 2011-09-08 | 2016-03-08 | 株式会社アマダホールディングス | シールドガス流量制御装置 |
US9471066B2 (en) * | 2012-01-20 | 2016-10-18 | Mks Instruments, Inc. | System for and method of providing pressure insensitive self verifying mass flow controller |
CN103592961B (zh) * | 2013-09-24 | 2016-05-25 | 中国科学院力学研究所 | 超声速燃烧试验的煤油流量控制装置 |
JP5797246B2 (ja) * | 2013-10-28 | 2015-10-21 | 株式会社フジキン | 流量計及びそれを備えた流量制御装置 |
JP6600568B2 (ja) * | 2015-09-16 | 2019-10-30 | 東京エレクトロン株式会社 | 流量制御器の出力流量を求める方法 |
US10663337B2 (en) * | 2016-12-30 | 2020-05-26 | Ichor Systems, Inc. | Apparatus for controlling flow and method of calibrating same |
-
2017
- 2017-04-18 JP JP2017082022A patent/JP6913498B2/ja active Active
-
2018
- 2018-04-16 KR KR1020180044040A patent/KR102491983B1/ko active IP Right Grant
- 2018-04-17 US US15/954,973 patent/US11231313B2/en active Active
- 2018-04-18 TW TW107113152A patent/TWI758463B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201843551A (zh) | 2018-12-16 |
JP2018181102A (ja) | 2018-11-15 |
US20180299908A1 (en) | 2018-10-18 |
TWI758463B (zh) | 2022-03-21 |
KR20180117055A (ko) | 2018-10-26 |
KR102491983B1 (ko) | 2023-01-27 |
US11231313B2 (en) | 2022-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106952799B (zh) | 使用基于等离子体的工艺消除氟残余物的系统和方法 | |
US9859126B2 (en) | Method for processing target object | |
US11049730B2 (en) | Workpiece processing method | |
JP6759004B2 (ja) | 被処理体を処理する方法 | |
JP2020065079A (ja) | プラズマ処理装置および大気開放方法 | |
JP6913498B2 (ja) | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 | |
US10676823B2 (en) | Processing method and processing apparatus | |
US10832891B2 (en) | Plasma processing apparatus and plasma processing method | |
US20220254635A1 (en) | Workpiece processing method | |
WO2018212045A1 (ja) | 多孔質膜をエッチングする方法 | |
US9257271B2 (en) | Semiconductor device manufacturing method, substrate processing apparatus, and non-transitory recording medium | |
TW201743662A (zh) | 基板處理方法 | |
KR102364188B1 (ko) | 에칭 방법 | |
US10480978B2 (en) | Method for inspecting flow rate controller and method for processing workpiece | |
JP2021141285A (ja) | 半導体製造装置および半導体装置の製造方法 | |
JP6318027B2 (ja) | プラズマ処理装置 | |
JP2019024139A (ja) | 多孔質膜をエッチングする方法 | |
WO2022264829A1 (ja) | クリーニング方法及びプラズマ処理装置 | |
TW202336806A (zh) | 使用自由基感測的電漿處理中的回授控制之方法及系統 | |
JP2022039910A (ja) | 基板処理方法及びプラズマ処理装置 | |
JP2023062858A (ja) | Ecrプラズマcvd装置及びecrプラズマcvd装置の成膜方法 | |
JP2022055923A (ja) | エッチング方法及びプラズマ処理装置 | |
CN114388327A (zh) | 基板处理系统、控制方法以及计算机可读取的存储介质 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191226 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210305 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210615 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210712 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6913498 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |