TWI750080B - 具散熱裝置的晶片模組及其製作方法 - Google Patents
具散熱裝置的晶片模組及其製作方法 Download PDFInfo
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- TWI750080B TWI750080B TW110113491A TW110113491A TWI750080B TW I750080 B TWI750080 B TW I750080B TW 110113491 A TW110113491 A TW 110113491A TW 110113491 A TW110113491 A TW 110113491A TW I750080 B TWI750080 B TW I750080B
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Abstract
本發明於提供一種具散熱裝置的晶片模組,其包含晶片模組、散熱體及複數個金屬連接件。散熱體設置於晶片模組上。該些金屬連接件設置於晶片模組與散熱體之間,並且利用超音波接合程序,使晶片模組與散熱體相互連接。
Description
本發明係關於一種具散熱裝置的晶片模組。本發明還涉及此晶片模組的製作方法。
導熱膏(Thermal grease)在中文語系地區也稱為散熱膏,是一種導熱性良好(但多半不導電)的膏狀物質,一般會用在散熱器和熱源(例如因發熱導致運作不佳或壽命減少的電子零件)的介面上。導熱膏的主要作用是取代介面部位的空氣或是間隙(空氣導熱性不佳),以讓熱傳導量可以增到最大。導熱膏是一種熱介面材料。
導熱膏和導熱膠不同,導熱膏本身雖然具有些許黏性,但仍無法將散熱器和熱源一同固定不位移,因此需要有其他機械式的固定機構(例如螺絲)以固定散熱片和熱源,並且在介面部份施加壓力,讓導熱膏充分分布在熱源無法直接接觸散熱器的部位。 為便於個人電腦(PC)使用者塗抹使用,導熱膏常以填充在注射器的形式販售。
導熱膏會包括聚合物的液態基質,以及大量不導電但是導熱的填料(filler)。典型的基質材料有矽氧樹脂、聚氨酯、丙烯酸酯聚合物、熱熔膠及壓感類的粘著劑。填料多半會是氧化鋁、氮化硼及氧化鋅,氮化鋁也越來越多用在填料上。填料的比例可能會多到導熱膏重量的70–80 wt %,可以提昇熱導率。含銀的導熱膏其熱導率可以到3 to 8 W/(m·K)或是更高。不過含金屬的導熱膏會導電,而且有電容性,若流到電路上,可能會導致電路誤動作甚至短路損毀。
熱阻(thermal resistance)是一個和熱有關的性質,是指在有溫度差的情形下,物體抵抗傳熱的能力。熱導率越好的物體,熱阻通常會比較低。許多電子元件在工作時都會產生熱量,若溫度過高,元件可能會失效,因此需要加以冷卻,因此需考慮散熱裝置的絕對熱阻,讓元件有適當的散熱,避免溫度過高而失效的情形出現。
本發明於一實施例中提供了一種散熱裝置,包含有晶片模組、散熱體及複數個金屬連接件。散熱體設置於晶片模組上。該些金屬連接件設置於晶片模組與散熱體之間,使晶片模組與散熱體相互連接。
本發明之另一實施例中提供了一種具散熱裝置的晶片模組之製作方法,其包含下列步驟:提供具有複數個第一子金屬連接件之晶片模組;形成複數個第二子金屬連接件於散熱體上;以及透過接合程序分別連接該些第一子金屬連接件及該些第二子金屬連接件以形成複數個金屬連接件。
熱壓超音波黏晶(Thermosonic die bonding),是一種低溫、潔淨及乾燥的封裝黏晶技術,是利用超音波震動提供能量使二種金屬結合,常使用的金屬以金對金接合最多。傳統熱壓黏晶需要使用大於270℃以上的溫度,如此的高溫容易造成基板或一些敏感晶片損壞,熱壓超音波大幅降低黏囗溫度至小於150℃,且不需要使用助銲劑及焊接後清洗程序。
若晶粒銲墊(Pad)的表面材質為金,一般金對鎳金結合會使用熱壓超音波(Thermosonic)製程,目的為降低作業溫度,避免作業高溫使金屬表面生成氧化物造成共金不良。
本發明利用金屬墊、金屬突塊並配合熱壓超音波黏晶,改善了傳統以散熱膏或其它黏著劑來連接晶片模組及散熱片,如此可以避免散熱膏高熱阻問題,進而增進電子元件之電性連接良率,並且延長電子元件之壽命。
以下將參照相關圖式,說明依本發明之具散熱裝置的晶片模組及其製作方法之實施例,為了清楚與方便圖式說明之故,圖式中的各部件在尺寸與比例上可能會被誇大或縮小地呈現。在以下描述及/或申請專利範圍中,當提及元件「連接」或「耦合」至另一元件時,其可直接連接或耦合至該另一元件或可存在介入元件;而當提及元件「直接連接」或「直接耦合」至另一元件時,不存在介入元件,用於描述元件或層之間之關係之其他字詞應以相同方式解釋。為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。
請參閱圖1,其係為本發明之一實施例之具散熱裝置的晶片模組之剖面圖。如圖所示,本實施例之具散熱裝置的晶片模組1包含有晶片模組10、散熱體13及複數個金屬連接件14。
晶片模組10,例如可以是晶片封裝體12設置於基板11上,並透過複數個錫球T與基板11連接。在一實施例中,基板11可為PCB板或其它類似的元件。晶片封裝體12可以是現有晶片封裝型式中任一種,將晶片封裝體12設置於基板上而成為一晶片模組10,設置方式可以是以黏著、銲接或者插入之方式將晶片封裝體固定於基板,但不以此為限。
散熱體13設置於晶片模組10上。在一實施例中,散熱體13可以是散熱片、散熱鰭片、散熱塊,並不限定其型式。
該些金屬連接件14係預先設置於晶片模組10與散熱體13之間,使晶片模組10與散熱體13相互連接。各個金屬連接件14包含第一金屬墊P1、第一金屬突塊M1、第二金屬墊P2及第二金屬突塊M2。該些第一金屬墊P1及該些金屬突塊M2設置於晶片模組10上,該些第二金屬墊P2及該些第二金屬突塊M2設置於散熱體13上。第一金屬突塊M1與第二金屬突塊M2相互連接,並設置在第一金屬墊P1及第二金屬墊P2之間。在本實施例中,該些第一金屬突塊M1及該些第二金屬突塊M2之材質可為但不限於為金(Au),而該些第一金屬墊P1及該些第二金屬墊P2之材質可為但不限於鎳(Ni)。在另一實施例中,該些第一金屬墊P1、該些第二金屬墊P2、該些第一金屬突塊M1及該些第二金屬突塊M2之材質可依實際需求變化,本發明不以此為限。
該些第一金屬突塊M1與該些第二金屬突塊M2透過接合程序相互連接以形成複數個金屬連接件14,使晶片模組10與散熱體13可透過該些金屬連接件14相互連接。在本實施例中,接合程序可為熱壓超音波黏晶程序技術。
本實施例中,該些第一金屬墊P1及該些第一金屬突塊M1會預先配置於晶片模組10,而該些第二金屬墊P2及該些第二金屬突塊M2會預先配置於散熱體13上,該些第一金屬突塊M1與該些第二金屬突塊M2可透過熱壓超音波接合程序相互連接以形成多個金屬連接件E,故不需要加溶劑、黏接劑或其它輔助化學品。
詳而言之,本實施例係利用不使用散熱膏或黏著劑之方式來連接該晶片模組10以及散熱片13,如此可以降低原本散熱膏之高熱阻所帶來的困擾。
此外,這種方式除了可以避免散熱膏高熱阻問題,更可以增進電子元件之電性連接良率,並且延長電子元件之壽命。
在另一實施例中,該些金屬連接件14也可使用複數個焊球,並以回流焊接程序(Reflow)做為接合程序形成。
本發明之一實施例之具散熱裝置的晶片模組之製作方法包含下列步驟:提供具有複數個第一子金屬連接件之一晶片模組;形成複數個第二子金屬連接件於一散熱體上;以及透過一接合程序分別連接該些第一子金屬連接件及該些第二子金屬連接件以形成複數個金屬連接件。
請參閱圖2~4,其係為本發明之一實施例之具散熱裝置的晶片模組之製作方法之第一示意圖~第三示意圖。如圖2所示,將該些第一金屬墊P1形成於晶片模組10上,並分別形成該些第一金屬突塊M1於該些第一金屬墊P1上,以形成該些第一子金屬連接件S1。同樣的,將該些第二金屬墊P2形成於熱散體13上,並分別形成該些第二金屬突塊M2於該些第二金屬墊P2上,以形成該些第二子金屬連接件S2。該些金屬連接件14會預先地設置於該晶片模組10或/及該散熱體13上。
如圖3所示,然後,使該些第一子金屬連接件S1與該些第二子金屬連接件S2接觸,並執行熱壓超音波接合程序。
如圖4所示,最後,該些第一子金屬連接件S1與該些第二子金屬連接件S2相互連接形成該些金屬連接件14。
於本發明另一實施例中,該些金屬連接件14不包含第二金屬突塊M2,於超音波接合程序中,利用第一金屬突塊之熔融而連接晶片模組10與散熱體13。詳而言之,並不限定該些金屬連接件之組合方式,或不限定設於晶片模組10或散熱體13,重點在於該些金屬連接件係預先設置於晶片模組10或/及散熱體13上,以便快速地進行後續之熱壓超音波接合程序。
當然,上述僅為舉例,本實施例之具散熱裝置的晶片模組1的各元件及其協同關係可依實際需求變化,本發明並不以此為限。
請參閱圖5,其係為本發明之另一實施例之具散熱裝置的晶片模組之剖面圖。如圖所示,本實施例之具散熱裝置的晶片模組2包含有晶片模組20、散熱體23及複數個金屬連接件24。
上述各元件與前一個實施例相似,故不在此多加贅述。與前一個實施例不同的是,該散熱體23更包含有至少一溝槽G,並且溝槽G位於該些第二金屬墊P2之間。如此,利用該至少一溝槽G,可以減少因為晶片模組20與散熱體23因膨脹係數不同所造成的位移。更詳細地說明,當使用者使用包含有本發明之電子產品時會因為操作過程中受到高溫環境的影響,因為晶片模組20和散熱體23之材質不同,其熱膨脹係數也不同。藉由溝槽G的設置,可以於接合程序中使得晶片模組20和散熱體23所受到的應力得以緩和並減少形變,以避免該些金屬連接件24斷裂,如此可以降低電子元件電性不良率並且可以延長電子元件之壽命。
晶片模組20之第二金屬墊P2係呈矩陣排列,而形成有X行與Y列之該些第二金屬墊P2,其中X為偶數,溝槽G呈一字型,並且位於第X/2行該些第二金屬墊P2及第X/2+1行該些第二金屬墊P2之間。例如,該些第二金屬墊P2具有6行及8列,溝槽G設置於第3行和第4行之間,或者設置於第4列和第5列之間。換言之,第二金屬墊P2係複數行及複數列之排列方式設置於晶片模組20之第二表面上,而溝槽G將第二金屬墊P2分成二個部份,並且是鏡相對分的,如此可以平均地分散並改善上述提及的因熱膨脹係不同所造成的不良影響,以避免該些金屬連接件24斷裂。
而於另一實施例中,其中該些第二金屬墊P2係呈矩陣排列,而形成有X行與Y列之該些第二金屬墊P2,其中X及Y為偶數,該溝槽G呈口字型,並將該些第二金屬墊P2區隔開來而定義為第一導熱區及第二導熱區。例如,金屬墊具有6行及8列,溝槽G設置於第2行和第3行之間、第4行和第5行之間以及第2列和第3列之間、第6列及第7列之間並互相連接而形成一口字型,此種方式是以晶片模組20中心處及外圍作為區隔之方式,將溝槽G形成於中心的第二金屬墊P2及邊緣處的第二金屬墊P2之間,而將該些第二金屬墊P2分為第一導熱區及第二導熱區,可平均分散地緩和接合程序時的應力,改善上述提及的因熱膨脹係不同所造成的不良影響。
綜上所述,根據本發明之實施例,具散熱裝置的晶片模組可透過接合程序形成複數個金屬連接件,使晶片模組與散熱體可透過該些金屬連接件相互連接,故不需要使用散熱膏,故可以大幅地提升散熱效果。
另外,根據本發明之實施例,具散熱裝置的晶片模組可透過接合程序形成複數個金屬連接件,使晶片模組與散熱體可透過該些金屬連接件相互連接,故不需要使用散熱膏,故可以增進電子元件之電性連接良率,並且延長電子元件之壽命。
再者,根據本發明之實施例,具散熱裝置的晶片模組之散熱體2包含有至少一溝槽,並且溝槽位於該些第二金屬墊之間,如此可避免因晶片模組及散熱體之熱膨脹係數不同而導致該些金屬連接件斷裂的情況產生。
以上所述僅為舉例性,而非為限制性者。其它任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應該包含於後附之申請專利範圍中。
1:具散熱裝置的晶片模組
10:晶片模組
11:基板
12:晶片封裝體
13:散熱體
14:金屬連接件
2:具散熱裝置的晶片模組
21:基板
22:晶片封裝體
23:散熱體
24:金屬連接件
T:錫球
P1:第一金屬墊
P2:第二金屬墊
M1:第一金屬突塊
M2:第二金屬突塊
S1:第一子金屬連接件
S2:第二子金屬連接件
G:溝槽
圖1係本發明之一實施例之具散熱裝置的晶片模組之剖面圖。
圖2係本發明之一實施例之具散熱裝置的晶片模組之製作方法之第一示意圖。
圖3係本發明之一實施例之具散熱裝置的晶片模組之製作方法之第二示意圖。
圖4係本發明之一實施例之具散熱裝置的晶片模組之製作方法之第三示意圖。
圖5 係本發明另一實施例之具散熱裝置的晶片模組之剖面圖。
1:具散熱裝置的晶片模組
10:晶片模組
11:基板
12:晶片封裝體
13:散熱體
14:金屬連接件
T:錫球
Claims (13)
- 一種具散熱裝置的晶片模組,包含:一晶片模組;一散熱體,係設置於該晶片模組上;以及複數個金屬連接件,係設置於該晶片模組與該散熱體之間,使該晶片模組與該散熱體相互連接,各個該金屬連接件包含一第一金屬墊、一第一金屬突塊、一第二金屬墊及一第二金屬突塊,該第一金屬突塊與該第二金屬突塊相互連接,並設置在該第一金屬墊及該第二金屬墊之間;其中,該散熱體更包含有至少一溝槽形成於該散熱體上,並且該溝槽位於該些第二金屬墊之間。
- 如請求項1之具散熱裝置的晶片模組,其中該些第一金屬墊及該些金屬突塊設置於該晶片模組上,該些第二金屬墊及該些第二金屬突塊設置於該散熱體上。
- 如請求項1之具散熱裝置的晶片模組,其中該些金屬連接件透過一熱壓超音波接合程序相互連接。
- 如請求項1之具散熱裝置的晶片模組,其中該些第二金屬墊係呈矩陣排列,而形成有X行與Y列之該些第二金屬墊,其中X為偶數,該溝槽呈一字型,並且位於第X/2行該些第二金屬墊及第X/2+1行該些第二金屬墊之間。
- 如請求項1之具散熱裝置的晶片模組,其中該些第二金屬墊係呈矩陣排列,而形成有X行與Y列之該些第二金屬墊,其中X及Y為偶數,該溝槽呈口字型,並將該些第二金屬墊區隔開來而定義為第一導熱區及第二導熱區。
- 如請求項1之具散熱裝置的晶片模組,其中該些金屬連接件由複數個焊球形成。
- 如請求項1之具散熱裝置的晶片模組,其中該些金屬連接件透過回流焊接程序形成。
- 一種具散熱裝置的晶片模組之製作方法,包含:提供具有複數個第一子金屬連接件之一晶片模組,各個該第一子金屬連接件包含形成於該晶片模組上的一第一金屬墊及形成於該第一金屬墊的一第一金屬突塊;形成複數個第二子金屬連接件於一散熱體上,各個該第二子金屬連接件包含形成於該散熱體上的一第二金屬墊及形成於該第二金屬墊的一第二金屬突塊;形成一溝槽於該散熱體上,其中該溝槽位於該些第二金屬墊之間;以及透過一接合程序分別連接該些第一子金屬連接件及該些第二子金屬連接件以形成複數個金屬連接件。
- 如請求項8之具散熱裝置的晶片模組之製作方法,其中該些第二金屬墊係呈矩陣排列,而形成有X行與Y列之該些第二金屬墊,其中X為偶數,該溝槽呈一字型,並且位於第X/2行該些第二金屬墊及第X/2+1行該些第二金屬墊之間。
- 如請求項8之具散熱裝置的晶片模組之製作方法,其中該些第二金屬墊係呈矩陣排列,而形成有X行與Y列之該些第二金屬墊,其中X及Y為偶數,該溝槽呈口字型,並將該些第二金屬墊區隔開來而定義為第一導熱區及第二導熱區。
- 如請求項8之具散熱裝置的晶片模組之製作方法,其中該接合程序為一熱壓超音波接合程序。
- 如請求項8之具散熱裝置的晶片模組之製作方法,其中該些金屬連接件由複數個焊球形成。
- 如請求項8之具散熱裝置的晶片模組之製作方法,其中該接合程序為一回流焊接程序。
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US10630296B2 (en) * | 2017-09-12 | 2020-04-21 | iCometrue Company Ltd. | Logic drive with brain-like elasticity and integrality based on standard commodity FPGA IC chips using non-volatile memory cells |
FR3096831B1 (fr) * | 2019-06-03 | 2021-06-18 | St Microelectronics Grenoble 2 | Dispositif électronique comprenant une puce électronique montée au-dessus d’un substrat de support |
CN113451224A (zh) * | 2020-03-27 | 2021-09-28 | 伟创力有限公司 | 电子系统、半导体封装以及形成该半导体封装的方法 |
TWM609258U (zh) * | 2020-12-15 | 2021-03-11 | 雙鴻科技股份有限公司 | 用於半導體元件的散熱器 |
-
2021
- 2021-04-15 TW TW110113491A patent/TWI750080B/zh active
- 2021-07-12 US US17/372,573 patent/US20220336314A1/en not_active Abandoned
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TW520559B (en) * | 2002-03-20 | 2003-02-11 | Advanced Semiconductor Eng | Flip chip assembly and method for producing the same |
US20140061642A1 (en) * | 2012-08-31 | 2014-03-06 | Qualcomm Incorporated | Method and apparatus for routing die signals using external interconnects |
TW201836066A (zh) * | 2017-03-15 | 2018-10-01 | 台灣積體電路製造股份有限公司 | 半導體封裝體及其形成方法 |
TWM610399U (zh) * | 2020-12-02 | 2021-04-11 | 雙鴻科技股份有限公司 | 散熱器結構 |
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US20220336314A1 (en) | 2022-10-20 |
TW202243153A (zh) | 2022-11-01 |
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