TWI747825B - 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積 - Google Patents

藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積 Download PDF

Info

Publication number
TWI747825B
TWI747825B TW105116371A TW105116371A TWI747825B TW I747825 B TWI747825 B TW I747825B TW 105116371 A TW105116371 A TW 105116371A TW 105116371 A TW105116371 A TW 105116371A TW I747825 B TWI747825 B TW I747825B
Authority
TW
Taiwan
Prior art keywords
tungsten
substrate
containing precursor
layer
chamber
Prior art date
Application number
TW105116371A
Other languages
English (en)
Chinese (zh)
Other versions
TW201715067A (zh
Inventor
亞當 揚德爾
珊傑 戈皮納思
巴曉蘭
拉許納 胡瑪雲
米歇爾 丹納克
勞倫斯 施洛斯
于天驊
思魯提 維克 湯貝爾
凱翰 阿畢迪 艾許地安尼
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/723,270 external-priority patent/US9613818B2/en
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201715067A publication Critical patent/TW201715067A/zh
Application granted granted Critical
Publication of TWI747825B publication Critical patent/TWI747825B/zh

Links

Images

Classifications

    • H10P14/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H10P14/24—
    • H10P14/6339—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW105116371A 2015-05-27 2016-05-26 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積 TWI747825B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/723,270 US9613818B2 (en) 2015-05-27 2015-05-27 Deposition of low fluorine tungsten by sequential CVD process
US14/723,270 2015-05-27
US201662328759P 2016-04-28 2016-04-28
US62/328,759 2016-04-28

Publications (2)

Publication Number Publication Date
TW201715067A TW201715067A (zh) 2017-05-01
TWI747825B true TWI747825B (zh) 2021-12-01

Family

ID=57573895

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105116371A TWI747825B (zh) 2015-05-27 2016-05-26 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積

Country Status (3)

Country Link
JP (1) JP7092456B2 (enExample)
KR (1) KR102397797B1 (enExample)
TW (1) TWI747825B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672737B (zh) * 2013-12-27 2019-09-21 Lam Research Corporation 允許低電阻率鎢特徵物填充之鎢成核程序
JP6788545B2 (ja) * 2017-04-26 2020-11-25 東京エレクトロン株式会社 タングステン膜を形成する方法
WO2018226696A1 (en) * 2017-06-05 2018-12-13 Applied Materials, Inc. Methods of lowering wordline resistance
CN111149190A (zh) * 2017-07-13 2020-05-12 应用材料公司 用于沉积钨成核层的方法及设备
KR102424993B1 (ko) 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
US10669160B2 (en) * 2018-04-30 2020-06-02 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide
WO2019213604A1 (en) * 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
KR102513403B1 (ko) * 2018-07-30 2023-03-24 주식회사 원익아이피에스 텅스텐 증착 방법
JP7273323B2 (ja) * 2018-08-17 2023-05-15 セントラル硝子株式会社 六フッ化タングステンの製造方法
JP7138518B2 (ja) 2018-08-31 2022-09-16 東京エレクトロン株式会社 成膜方法及び成膜システム
CN111162039A (zh) * 2018-11-08 2020-05-15 长鑫存储技术有限公司 金属导电结构及半导体器件的制备方法
WO2020123987A1 (en) * 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
KR20200099112A (ko) 2019-02-13 2020-08-21 세종대학교산학협력단 Ald 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법
KR102825476B1 (ko) * 2019-02-20 2025-06-30 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US11447864B2 (en) * 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR102895401B1 (ko) * 2019-04-19 2025-12-03 램 리써치 코포레이션 원자층 증착 동안 급속 플러시 퍼징
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
WO2021030836A1 (en) 2019-08-12 2021-02-18 Lam Research Corporation Tungsten deposition
JP2021038442A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW202206634A (zh) * 2020-06-30 2022-02-16 美商應用材料股份有限公司 在低溫下的選擇性鎢沉積
KR102847592B1 (ko) 2020-11-05 2025-08-18 세종대학교산학협력단 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 증착 장치
WO2022108908A1 (en) * 2020-11-20 2022-05-27 Lam Research Corporation Low resistance pulsed cvd tungsten
US11515200B2 (en) * 2020-12-03 2022-11-29 Applied Materials, Inc. Selective tungsten deposition within trench structures
CN117460859A (zh) * 2021-05-07 2024-01-26 恩特格里斯公司 钼或钨材料的沉积方法
CN114420533B (zh) * 2021-12-08 2024-10-18 武汉新芯集成电路股份有限公司 在半导体晶片上制备钨的方法
CN119230478A (zh) * 2023-06-30 2024-12-31 北京北方华创微电子装备有限公司 沉积钨塞的工艺方法及半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030013300A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US20140319614A1 (en) * 2013-04-25 2014-10-30 GlobalFoundries, Inc. Finfet channel stress using tungsten contacts in raised epitaxial source and drain

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
KR20080101745A (ko) 2007-05-15 2008-11-21 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 재료들의 원자층 증착
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
KR101356332B1 (ko) * 2010-03-19 2014-02-04 노벨러스 시스템즈, 인코포레이티드 낮은 저항 및 강한 미소-접착 특성을 가진 텅스텐 박막의 증착 방법
JP5864503B2 (ja) 2013-09-30 2016-02-17 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030013300A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US20140319614A1 (en) * 2013-04-25 2014-10-30 GlobalFoundries, Inc. Finfet channel stress using tungsten contacts in raised epitaxial source and drain

Also Published As

Publication number Publication date
JP2017008412A (ja) 2017-01-12
KR20160140448A (ko) 2016-12-07
KR102397797B1 (ko) 2022-05-12
TW201715067A (zh) 2017-05-01
JP7092456B2 (ja) 2022-06-28

Similar Documents

Publication Publication Date Title
TWI747825B (zh) 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積
US12362188B2 (en) Method for preventing line bending during metal fill process
TWI709656B (zh) 具有低氟含量之鎢膜
US10546751B2 (en) Forming low resistivity fluorine free tungsten film without nucleation
US9613818B2 (en) Deposition of low fluorine tungsten by sequential CVD process
TWI831756B (zh) 形成金屬薄膜的方法及儀器
TWI704251B (zh) 字元線應用所使用的鎢
TWI730942B (zh) 利用氯化鎢前驅物製備鎢及氮化鎢薄膜的方法
KR102857307B1 (ko) 3d nand 구조체 상의 원자 층 증착
JP2017008412A5 (enExample)
KR20210027507A (ko) 순수 금속 막의 증착
TW201610201A (zh) 以無氟鎢填充高深寬比特徵物的方法
TW202039911A (zh) 金屬膜的沉積
TW202237880A (zh) 低電阻脈衝cvd鎢
TW201920748A (zh) 氮化鎢阻障層沉積