JP7092456B2 - 連続ｃｖｄプロセスによる低フッ素タングステンの堆積 - Google Patents

連続ｃｖｄプロセスによる低フッ素タングステンの堆積 Download PDF

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JP7092456B2
JP7092456B2 JP2016104837A JP2016104837A JP7092456B2 JP 7092456 B2 JP7092456 B2 JP 7092456B2 JP 2016104837 A JP2016104837 A JP 2016104837A JP 2016104837 A JP2016104837 A JP 2016104837A JP 7092456 B2 JP7092456 B2 JP 7092456B2
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tungsten
substrate
containing precursor
layer
bulk
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JP2017008412A (ja
JP2017008412A5 (enExample
Inventor
アダム・ジャンドル
サンジャイ・ゴピナス
シャオラン・バ
ラシーナ・フマユン
ミハル・ダネク
ローレンス・シュロス
ティアンファ・ユ
シュルティ・ビベク・トンバレ
カイハン・アビディ・アシュティアニ
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Lam Research Corp
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Lam Research Corp
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Priority claimed from US14/723,270 external-priority patent/US9613818B2/en
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    • H10P14/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H10P14/24—
    • H10P14/6339—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2016104837A 2015-05-27 2016-05-26 連続ｃｖｄプロセスによる低フッ素タングステンの堆積 Active JP7092456B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/723,270 US9613818B2 (en) 2015-05-27 2015-05-27 Deposition of low fluorine tungsten by sequential CVD process
US14/723,270 2015-05-27
US201662328759P 2016-04-28 2016-04-28
US62/328,759 2016-04-28

Publications (3)

Publication Number Publication Date
JP2017008412A JP2017008412A (ja) 2017-01-12
JP2017008412A5 JP2017008412A5 (enExample) 2021-08-26
JP7092456B2 true JP7092456B2 (ja) 2022-06-28

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JP2016104837A Active JP7092456B2 (ja) 2015-05-27 2016-05-26 連続ｃｖｄプロセスによる低フッ素タングステンの堆積

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Country Link
JP (1) JP7092456B2 (enExample)
KR (1) KR102397797B1 (enExample)
TW (1) TWI747825B (enExample)

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TWI672737B (zh) * 2013-12-27 2019-09-21 Lam Research Corporation 允許低電阻率鎢特徵物填充之鎢成核程序
JP6788545B2 (ja) * 2017-04-26 2020-11-25 東京エレクトロン株式会社 タングステン膜を形成する方法
WO2018226696A1 (en) * 2017-06-05 2018-12-13 Applied Materials, Inc. Methods of lowering wordline resistance
CN111149190A (zh) * 2017-07-13 2020-05-12 应用材料公司 用于沉积钨成核层的方法及设备
KR102424993B1 (ko) 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
US10669160B2 (en) * 2018-04-30 2020-06-02 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide
WO2019213604A1 (en) * 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
KR102513403B1 (ko) * 2018-07-30 2023-03-24 주식회사 원익아이피에스 텅스텐 증착 방법
JP7273323B2 (ja) * 2018-08-17 2023-05-15 セントラル硝子株式会社 六フッ化タングステンの製造方法
JP7138518B2 (ja) 2018-08-31 2022-09-16 東京エレクトロン株式会社 成膜方法及び成膜システム
CN111162039A (zh) * 2018-11-08 2020-05-15 长鑫存储技术有限公司 金属导电结构及半导体器件的制备方法
WO2020123987A1 (en) * 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
KR20200099112A (ko) 2019-02-13 2020-08-21 세종대학교산학협력단 Ald 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법
KR102825476B1 (ko) * 2019-02-20 2025-06-30 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US11447864B2 (en) * 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR102895401B1 (ko) * 2019-04-19 2025-12-03 램 리써치 코포레이션 원자층 증착 동안 급속 플러시 퍼징
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
WO2021030836A1 (en) 2019-08-12 2021-02-18 Lam Research Corporation Tungsten deposition
JP2021038442A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW202206634A (zh) * 2020-06-30 2022-02-16 美商應用材料股份有限公司 在低溫下的選擇性鎢沉積
KR102847592B1 (ko) 2020-11-05 2025-08-18 세종대학교산학협력단 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 증착 장치
WO2022108908A1 (en) * 2020-11-20 2022-05-27 Lam Research Corporation Low resistance pulsed cvd tungsten
US11515200B2 (en) * 2020-12-03 2022-11-29 Applied Materials, Inc. Selective tungsten deposition within trench structures
CN117460859A (zh) * 2021-05-07 2024-01-26 恩特格里斯公司 钼或钨材料的沉积方法
CN114420533B (zh) * 2021-12-08 2024-10-18 武汉新芯集成电路股份有限公司 在半导体晶片上制备钨的方法
CN119230478A (zh) * 2023-06-30 2024-12-31 北京北方华创微电子装备有限公司 沉积钨塞的工艺方法及半导体器件

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2008303466A (ja) 2001-10-10 2008-12-18 Applied Materials Inc 一連の堆積技術を用いる耐火性金属層を堆積する方法
JP2009024252A (ja) 2007-05-15 2009-02-05 Applied Materials Inc タングステン材料の原子層堆積法
JP2015067869A (ja) 2013-09-30 2015-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
KR101356332B1 (ko) * 2010-03-19 2014-02-04 노벨러스 시스템즈, 인코포레이티드 낮은 저항 및 강한 미소-접착 특성을 가진 텅스텐 박막의 증착 방법
US8975142B2 (en) * 2013-04-25 2015-03-10 Globalfoundries Inc. FinFET channel stress using tungsten contacts in raised epitaxial source and drain

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008303466A (ja) 2001-10-10 2008-12-18 Applied Materials Inc 一連の堆積技術を用いる耐火性金属層を堆積する方法
JP2009024252A (ja) 2007-05-15 2009-02-05 Applied Materials Inc タングステン材料の原子層堆積法
JP2015067869A (ja) 2013-09-30 2015-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
JP2017008412A (ja) 2017-01-12
KR20160140448A (ko) 2016-12-07
TWI747825B (zh) 2021-12-01
KR102397797B1 (ko) 2022-05-12
TW201715067A (zh) 2017-05-01

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