KR102397797B1 - 순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착 - Google Patents

순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착 Download PDF

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KR102397797B1
KR102397797B1 KR1020160064157A KR20160064157A KR102397797B1 KR 102397797 B1 KR102397797 B1 KR 102397797B1 KR 1020160064157 A KR1020160064157 A KR 1020160064157A KR 20160064157 A KR20160064157 A KR 20160064157A KR 102397797 B1 KR102397797 B1 KR 102397797B1
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tungsten
substrate
containing precursor
cvd
exposing
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KR20160140448A (ko
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아담 잔들
산제이 고피나스
샤오란 바
라아시나 후마윤
미첼 다넥
로렌스 슐로스
텐화 유
슈르티 비벡 톰바레
카이한 아비디 아쉬티아니
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램 리써치 코포레이션
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Priority claimed from US14/723,270 external-priority patent/US9613818B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H01L21/28556—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H01L21/0228—
    • H01L21/0262—
    • H01L21/205—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H01L2924/01074—

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020160064157A 2015-05-27 2016-05-25 순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착 Active KR102397797B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/723,270 2015-05-27
US14/723,270 US9613818B2 (en) 2015-05-27 2015-05-27 Deposition of low fluorine tungsten by sequential CVD process
US201662328759P 2016-04-28 2016-04-28
US62/328,759 2016-04-28

Publications (2)

Publication Number Publication Date
KR20160140448A KR20160140448A (ko) 2016-12-07
KR102397797B1 true KR102397797B1 (ko) 2022-05-12

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JP (1) JP7092456B2 (enExample)
KR (1) KR102397797B1 (enExample)
TW (1) TWI747825B (enExample)

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TWI672737B (zh) * 2013-12-27 2019-09-21 Lam Research Corporation 允許低電阻率鎢特徵物填充之鎢成核程序
JP6788545B2 (ja) * 2017-04-26 2020-11-25 東京エレクトロン株式会社 タングステン膜を形成する方法
KR102270458B1 (ko) * 2017-06-05 2021-06-29 어플라이드 머티어리얼스, 인코포레이티드 워드라인 저항을 낮추는 방법들
CN111149190A (zh) * 2017-07-13 2020-05-12 应用材料公司 用于沉积钨成核层的方法及设备
KR102424993B1 (ko) 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
US10669160B2 (en) * 2018-04-30 2020-06-02 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide
WO2019213604A1 (en) * 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
KR102513403B1 (ko) * 2018-07-30 2023-03-24 주식회사 원익아이피에스 텅스텐 증착 방법
US12145857B2 (en) * 2018-08-17 2024-11-19 Central Glass Company, Limited Method for producing tungsten hexafluoride
JP7138518B2 (ja) 2018-08-31 2022-09-16 東京エレクトロン株式会社 成膜方法及び成膜システム
CN111162039A (zh) * 2018-11-08 2020-05-15 长鑫存储技术有限公司 金属导电结构及半导体器件的制备方法
JP7649741B2 (ja) * 2018-12-14 2025-03-21 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
KR20200099112A (ko) 2019-02-13 2020-08-21 세종대학교산학협력단 Ald 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법
CN113302723B (zh) * 2019-02-20 2024-04-12 东京毅力科创株式会社 半导体装置的制造方法
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
WO2020214732A1 (en) * 2019-04-19 2020-10-22 Lam Research Corporation Rapid flush purging during atomic layer deposition
KR102897355B1 (ko) * 2019-04-19 2025-12-08 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
JP2021038442A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI920099B (zh) * 2020-06-30 2026-04-01 美商應用材料股份有限公司 在低溫下的選擇性鎢沉積
KR102847592B1 (ko) 2020-11-05 2025-08-18 세종대학교산학협력단 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 증착 장치
CN115836380A (zh) * 2020-11-20 2023-03-21 朗姆研究公司 低电阻脉冲式cvd钨
US11515200B2 (en) * 2020-12-03 2022-11-29 Applied Materials, Inc. Selective tungsten deposition within trench structures
JP7686761B2 (ja) * 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
CN117460859A (zh) * 2021-05-07 2024-01-26 恩特格里斯公司 钼或钨材料的沉积方法
CN114420533B (zh) * 2021-12-08 2024-10-18 武汉新芯集成电路股份有限公司 在半导体晶片上制备钨的方法
US20240266215A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Low stress tungsten layer deposition
CN119230478A (zh) * 2023-06-30 2024-12-31 北京北方华创微电子装备有限公司 沉积钨塞的工艺方法及半导体器件

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CN101308794B (zh) 2007-05-15 2010-09-15 应用材料股份有限公司 钨材料的原子层沉积
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
KR101356332B1 (ko) * 2010-03-19 2014-02-04 노벨러스 시스템즈, 인코포레이티드 낮은 저항 및 강한 미소-접착 특성을 가진 텅스텐 박막의 증착 방법
US8975142B2 (en) * 2013-04-25 2015-03-10 Globalfoundries Inc. FinFET channel stress using tungsten contacts in raised epitaxial source and drain
JP5864503B2 (ja) 2013-09-30 2016-02-17 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体

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JP7092456B2 (ja) 2022-06-28
JP2017008412A (ja) 2017-01-12
KR20160140448A (ko) 2016-12-07
TWI747825B (zh) 2021-12-01
TW201715067A (zh) 2017-05-01

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