TWI742424B - Exhaust gas introduction nozzle, water treatment device, and exhaust gas treatment device - Google Patents
Exhaust gas introduction nozzle, water treatment device, and exhaust gas treatment device Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
- B05B15/50—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
- B01D47/02—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
- B01D47/02—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath
- B01D47/022—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath by using a liquid curtain
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
- B01D53/18—Absorbing units; Liquid distributors therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
- B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
- B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Abstract
提供一種排氣導入噴嘴,可以在排氣處理裝置的水處理裝置中,確實地消除固態反應物的堵塞。 排氣導入噴嘴(1),係包含:內管(2),其是將已導入的排氣(H)從第一噴出口(2f)噴出至水處理槽(20)內的高濕度環境內;以及外管(5),其是以包圍內管(2)的第一噴出口(2f)之外周的方式所配設,且具有第二噴出口(5f),該第二噴出口(5f)係以包圍從第一噴出口(2f)所噴出的排氣(H)之周圍的方式噴出非活性氣體(F),且在排氣(H)之周圍形成非活性氣體簾幕(F1)。An exhaust gas introduction nozzle is provided, which can reliably eliminate the clogging of solid reactants in a water treatment device of an exhaust gas treatment device. The exhaust gas introduction nozzle (1) includes: an inner pipe (2), which sprays the introduced exhaust gas (H) from the first outlet (2f) into the high humidity environment in the water treatment tank (20) And the outer pipe (5), which is arranged to surround the outer circumference of the first ejection port (2f) of the inner pipe (2), and has a second ejection port (5f), the second ejection port (5f) ) Is to spray inert gas (F) around the exhaust gas (H) ejected from the first nozzle (2f), and form an inert gas curtain (F1) around the exhaust gas (H) .
Description
本發明係關於一種在排氣之作為熱分解製程之前階段的水處理製程中所使用的排氣導入噴嘴之改良、以及使用該噴嘴的水處理裝置及排氣處理裝置之改良,該排氣係從半導體製造過程(manufacturing process)所排出且包含加水分解性的成分氣體或粉塵。The present invention relates to an improvement of an exhaust gas introduction nozzle used in a water treatment process at the stage prior to the thermal decomposition process of exhaust gas, and an improvement of a water treatment device and an exhaust gas treatment device using the nozzle. The exhaust system A component gas or dust that is discharged from the semiconductor manufacturing process and contains water-decomposable components.
此種的排氣,是在半導體、液晶等的電子電路元件之製造程序中所產生的排氣,特別是在潔淨(cleaning)製程、蝕刻(etching)製程中所產生的排氣,其成分的大半(大概90%以上)係由氮所構成,在其餘部分中則包含如NF3 、CF4 、或是C2 F6 等地球暖化係數遠大於二氧化碳的PFC氣體(perfluorocarbon gas;全氟化碳氣體)。為了將如此的排氣釋放至大氣中就必須在事前將此等有害成分氣體進行熱分解來使之無害化。 可是,即便在水分極少的環境下已將上述有害成分進行熱分解仍非常容易進行再結合,最終只能獲得較低的分解率。故而,為了要阻止再結合就不可缺少水分的存在。This kind of exhaust is the exhaust generated in the manufacturing process of electronic circuit components such as semiconductors and liquid crystals, especially the exhaust generated in the cleaning process and etching process. Its composition Most of it (about 90% or more) is composed of nitrogen, and the rest contains PFC gas (perfluorocarbon gas; perfluorocarbon gas, which has a global warming coefficient much greater than carbon dioxide) such as NF 3 , CF 4 , or C 2 F 6 Carbon gas). In order to release such exhaust gas into the atmosphere, it is necessary to thermally decompose the harmful component gas in advance to make it harmless. However, even if the above-mentioned harmful components have been thermally decomposed in an environment with very little moisture, it is still very easy to recombine, and ultimately only a lower decomposition rate can be obtained. Therefore, in order to prevent recombination, the presence of water is indispensable.
在此排氣之中,例如有時會包含氟化鎢(fluorinated tungsten)、二氯矽烷(dichlorosilane)、三氯矽烷(trichlorosilane)、氟化矽等加水分解性之成分氣體。此外有時也包含有多量的粉塵。該加水分解性之成分氣體係與水反應而形成固態之加水分解生成物(三氧化鎢或氧化矽)。當該加水分解性之成分氣體伴隨排氣而流入至不可缺少水之存在的熱分解區時,就會產生前述固態之加水分解生成物並堆積而閉塞熱分解區。 又,當多量的粉塵進入熱分解區時就會堆積而同樣地閉塞熱分解區。In this exhaust gas, for example, water-decomposable component gases such as fluorinated tungsten, dichlorosilane, trichlorosilane, and silicon fluoride may be included. In addition, a large amount of dust is sometimes included. The water-decomposable component gas system reacts with water to form a solid water-decomposable product (tungsten trioxide or silicon oxide). When the water-decomposable component gas flows into the thermal decomposition zone where the presence of water is indispensable along with the exhaust gas, the above-mentioned solid hydrolysis product is generated and accumulated to block the thermal decomposition zone. In addition, when a large amount of dust enters the thermal decomposition zone, it will accumulate and similarly block the thermal decomposition zone.
於是,為了使加水分解性之成分氣體或粉塵不進入熱分解區,而有提出一種如專利文獻1(圖6)所示的排氣處理裝置Y來作為將此等加水分解性之成分氣體或粉塵予以事前除去的裝置。Therefore, in order to prevent the water-decomposable component gas or dust from entering the thermal decomposition zone, an exhaust gas treatment device Y as shown in Patent Document 1 (FIG. 6) has been proposed as the water-decomposable component gas or A device that removes dust beforehand.
該排氣處理裝置Y,係包含:水槽150;及入口洗滌器(scrubber)110與出口洗滌器140,其是豎設於該水槽150之上;以及熱分解塔125,其是在入口洗滌器110與出口洗滌器140之間豎設於該水槽150之上,且於內部具有熱分解區126。The exhaust gas treatment device Y includes: a
水槽150,係於底部裝滿有循環用之水M,該水M與頂板部之間是成為水洗排氣H1之第一流通路、熱分解排氣H2之第二流通路,且在第一流通路與第二流通路之間設置有隔壁151。The
入口洗滌器110,係在其頂部設置有用以將排氣H導入至內部的普通噴嘴100,在其正下方設置有具有向下的噴霧噴嘴(spray nozzle)112的噴淋(shower)配管111,更在其下方設置有氣液接觸(gas‐liquid contact)促進用的充填材料層115。入口洗滌器110之底部係開口於水槽150之第一流通路。The
熱分解塔125係包含有:排氣導入管127,其是開口於第一流通路;塔本體128,其是以包圍該排氣導入管127之周圍的方式所設置,且將熱分解區126形成於其內部;以及加熱器129,其是設置於熱分解區126。塔本體128之底部係開口於第二流通路。The
然後,從如CVD(Chemical Vapor Deposition
:化學氣相沉積)成膜裝置之半導體製造裝置S所排出來的排氣H,係通過排氣導入配管120,從噴嘴100吹入至入口洗滌器110內。在入口洗滌器110內係以被噴出之微細水滴不淋在噴嘴100之噴出口101的方式從噴霧噴嘴112向下散布有循環用之水M。
排氣H內所包含的加水分解性之成分氣體的一部分,係接觸於所散布的水M並進行加水分解,且生成固態反應生成物並在作為下一個製程的熱分解之前被除去。粉塵之大半也同時被捕集除去。然後,在其下方之充填材料層115通過中其餘的加水分解性之成分氣體或粉塵會與流出至充填材料之表面的水進行氣體-液體接觸而其大部分會被除去,且作為水洗排氣H1而與多量的水分一起被送至熱分解區126。Then, from such as CVD (Chemical Vapor Deposition
(Chemical Vapor Deposition) The exhaust gas H discharged from the semiconductor manufacturing apparatus S of the film forming apparatus is blown into the
雖然在熱分解區126係在存在水分的環境下包含PFC,但是會將加水分解性之成分氣體或粉塵已被除去相當程度之狀態的水洗排氣H1進行熱分解。再者,該熱分解排氣H2係在以與熱分解區126之出口側連通的方式所設置的出口洗滌器140,進行前述熱分解排氣H2之洗淨與達到能夠釋放至大氣中之溫度為止的冷卻且作為大氣釋放排氣H3來釋放至大氣中。
[先前技術文獻]
[專利文獻]Although the
專利文獻1:日本特開平7-323211號公報Patent Document 1: Japanese Patent Application Publication No. 7-323211
可是,在如上述的習知排氣熱分解裝置Y之入口洗滌器110中,無論是否已下工夫在以微細水滴不淋在排氣導入用的噴嘴100之噴出口101的方式向下散布噴霧噴嘴112等,都會發生該噴嘴100、或排氣導入配管120內(特別是與噴嘴100的連接部分21)堵塞的問題。可明白此是因入口洗滌器110內的水分會逆擴散至流動於該噴嘴100或排氣導入配管120的排氣H內(以圖6之二點鏈線所示的排氣H之流動的逆向),且與流動於該噴嘴100或排氣導入配管120的排氣H之加水分解性的成分氣體反應,使反應生成物堆積於噴嘴100之排氣H所噴出的噴出口101或排氣導入配管120內所致。However, in the
於是,雖然已嘗試將流動於噴嘴100的排氣H之流速提高至能夠熱分解的範圍之上限,但是無法消除上述的閉塞問題。此是因朝向上游側的「水之逆擴散」比排氣H之流動更快預想以上所致。
結果,不得已要在習知裝置Y中進行已堵塞的噴嘴100、或排氣導入配管120之頻繁的交換。
再者,在入口洗滌器110中,雖然較佳是以較高的頻率來產生排氣H與所散布的水M之氣體-液體接觸,但是如上述在向上之散布中微細水滴會附著於噴嘴100而促進上述閉塞,故而僅能進行向下之散布。在該向下之散布中係不會發生噴嘴100近旁的氣液接觸,要達到該程度就不得不加厚充填材料層115。Therefore, although attempts have been made to increase the flow rate of the exhaust gas H flowing through the
本發明係有鑑於如此的問題點而開發完成,其第一個解決課題在於提供一種排氣導入噴嘴,其是在排氣處理裝置之水處理裝置中所使用,且可以確實地防止水分之逆擴散並可以確實地消除固態反應物之堵塞;其第二個解決課題在於提供一種水處理裝置,其是使用該排氣導入噴嘴,且加水分解性之成分氣體或粉塵的除去效率較高,進而提供一種具有該種功能的排氣處理裝置。The present invention has been developed in view of such problems. Its first problem to be solved is to provide an exhaust gas introduction nozzle which is used in the water treatment device of the exhaust gas treatment device and can reliably prevent the reverse of moisture. Diffusion and can reliably eliminate the blockage of the solid reactant; its second problem is to provide a water treatment device, which uses the exhaust gas introduction nozzle, and the removal efficiency of the water-decomposable component gas or dust is high, and then An exhaust gas treatment device with this function is provided.
本發明之第1態樣的發明(實施形態1的排氣導入噴嘴1:圖1)為雙重管。
一種排氣導入噴嘴,係設置於水處理裝置A的水處理槽20之排氣導入部22的排氣導入噴嘴1,該水處理裝置A係以內部之高濕度環境,對包含加水分解性之成分氣體的排氣H進行加水分解處理,其特徵為,包含:
內管2,其是將已導入的排氣H從其第一噴出口2f噴出至前述水處理槽20內的高濕度環境內;以及
外管5,其是以包圍前述內管2的前述第一噴出口2f之外周的方式所配設,且具有第二噴出口5f,該第二噴出口5f係以包圍從前述第一噴出口2f所噴出的排氣H之周圍的方式噴出非活性氣體F,且在前述排氣H之周圍形成非活性氣體簾幕(gas curtain)F1;
前述外管5的第二噴出口5f之第二開口端5k,係以比前述內管2的第一噴出口2f之第一開口端2k還朝向排氣H之噴出方向突出的方式所構成。The invention of the first aspect of the present invention (exhaust
藉此,從內管2之第一噴出口2f噴出至高濕度環境的排氣H,係在其全周直至從前述第一噴出口2f僅遠離某距離的範圍為止由非活性氣體簾幕F1所包圍並從周圍之高濕度環境(水分)隔離。然後,排氣H與非活性氣體簾幕F1,係在比僅遠離某距離的地點更前面,隨著其流速之降低而相互地混合,進而擴散至前述高濕度環境內並與該水分接觸而加水分解。
此時,由於即便在與非活性液體F混合的地點已存在水分,排氣H仍會在該區域由非活性氣體F所稀釋,所以不會發生傳至從前述第一噴出口2f所噴射的排氣H並朝向前述第一噴出口2f的「水之逆擴散」。
Thereby, the exhaust gas H ejected from the
此外,在內管2的第一噴出口2f之近旁,排氣H因非活性氣體簾幕F1之動作而完全被隔離而不會與周圍之高濕度環境接觸,加水分解生成物也不會從該部分附著於內管2之第一噴出口2f。
In addition, near the
在此所謂「高濕度環境」,係指水處理槽20內之水分與排氣進行氣液接觸的空間K。
The so-called "high humidity environment" herein refers to the space K where the moisture in the
第2態樣的發明(實施形態2的導入噴嘴1:圖4),為第1態樣的排氣導入噴嘴1,其中,在外管5的第二噴出口5f之周圍更設置有水分噴出噴嘴10,該水分噴出噴嘴10係具有沿前述非活性氣體簾幕F1噴出微細水滴或水蒸氣M的第三噴出口10f(10f’)。
The invention of the second aspect (
水分噴出噴嘴10之第三噴出口10f,係以呈同心圓狀包圍外管5之周圍的方式所設置並形成三重管(圖5中之(a))。作為變化例,也可單純地將一個或複數個水分噴出噴嘴孔10f’配置於外管5之周圍(圖5中之(b))。
The
雖然從第三噴出口10f(10f’)出來的微細水滴或水蒸氣M(以下,有時將微細水滴、水蒸氣或是循環用之水等加水分解用的水總稱為「水等」),係沿非活性氣體簾幕F1之外側噴出,但是會在遠離第一噴出口2f的某位置與非活性氣體簾幕F1或排氣H混合,且在該區域與排氣H接觸而將之進行加水分解。該區域係十分遠離第一噴出口2f且由非活性氣體簾幕F1所遮蔽,由於排氣H是由非活性氣體F所稀釋,所以不會發生與上述同樣的「水之逆擴散」。
Although the fine water droplets or water vapor M coming out from the
第3態樣或第4態樣的發明(圖3中之(b)、圖4中之(b)),係顯示第1態樣及第2態樣的內管2之第一噴出口2f與外管5之第二噴出口5f之位置關係的另一例,且為第1態樣或第2態樣的排氣導入噴嘴1,其中,前述外管5的第二噴出口5f之第二開口端5k、與內管2的第一噴出口2f之第一開口端2k,係構成相同的突出高度(同一平面)。
The invention of the third aspect or the fourth aspect ((b) in FIG. 3 and (b) in FIG. 4) shows the
藉此從外管5之第二噴出口5f所噴出的非活性氣體簾幕F1,係以某距離遍及於排氣H之全周地從周圍之高濕度環境遮斷排氣H。結果,與上述同樣,加水分解生成物不會附著於內管2之第一噴出口2f。
In this way, the inert gas curtain F1 sprayed from the
第5態樣的發明,為第2態樣的排氣導入噴嘴1(圖4中之(a)),其中,前述外管5的第二噴出口5f之第二開口端5k,係以比前述水分噴出噴嘴10的第三噴出口10f之第三開口端10k還朝向排氣H之噴出方向突出的方式所構成。
The fifth aspect of the invention is the second aspect of the exhaust gas introduction nozzle 1 (FIG. 4(a)), in which the
第6態樣的發明,係第5態樣之另一例,且為第2態樣的排氣導入噴嘴1(圖4中之(b)),其中,前述外管5的第二噴出口5f之第二開口端5k、與前述水分噴出噴嘴10的第三噴出口10f之第三開口端10k係構成相同的突出高度(同一平面)。
The invention of the sixth aspect is another example of the fifth aspect, and is the exhaust
藉此從水分噴出噴嘴10所噴出的水等M,係沿外管5之外周面而流出,並且由內側之非活性氣體簾幕F1所遮蔽而不會進入其內側,且在某噴出距離內,只要不與從內管2之第一噴出口2f所噴出的排氣H靠近也不會接觸。故而,即便微細水滴或加熱水蒸氣從已設置於最外周的水分噴出噴嘴10噴出,加水分解生成物仍不會附著於內管2之第一噴出口2f。The water etc. M sprayed from the
第7態樣的發明,為第1態樣至第6態樣中任一態樣的發明,其中,非活性氣體簾幕F1的噴出速度是與排氣H的噴出速度相同,或是非活性氣體簾幕F1的噴出速度設定得較快。The invention of the seventh aspect is an invention of any one of the first aspect to the sixth aspect, wherein the ejection speed of the inert gas curtain F1 is the same as the ejection speed of the exhaust gas H, or an inert gas The spraying speed of curtain F1 is set faster.
非活性氣體簾幕F1之噴出速度變得越快,非活性氣體簾幕F1之排氣H的遮蔽距離就變得越長,且遮蔽效果變得越強。結果,能更佳地阻擋反應生成物附著於內管2之第一噴出口2f。又,也能減少非活性氣你F之使用量。The faster the ejection speed of the inert gas curtain F1 becomes, the longer the shielding distance of the exhaust H of the inert gas curtain F1 becomes, and the stronger the shielding effect becomes. As a result, it is possible to better prevent the reaction product from adhering to the
第8態樣係關於一種裝備有第1態樣至第7態樣中任一態樣之發明的獨立式之水處理裝置A(圖1)。亦即,一種水處理裝置,係將從半導體製造裝置S所送來的排氣H進行加水分解並除去加水分解性之氣體成分,且將水處理過的水洗排氣H1送出至下一個製程的水處理裝置A,其特徵為,包含:
第1態樣至第7態樣中任一態樣所記載的排氣導入噴嘴1;及
水處理槽20,其是在其排氣導入部22安裝有前述排氣導入噴嘴1;及
蒸氣配管21,其是設置於前述水處理槽20內,且具有朝向前述內管2的第一噴出口2f所設置,用以噴出水蒸氣M的噴嘴口21a;以及
排氣管26,其是從水處理槽20連接於下一個製程,且將水處理過的水洗排氣H1送出至下一個製程。The eighth aspect relates to an independent water treatment device A equipped with the invention of any one of the first aspect to the seventh aspect (FIG. 1 ). That is, a water treatment device that hydrolyzes the exhaust gas H sent from the semiconductor manufacturing device S and removes the water-decomposable gas components, and sends the water-washed exhaust gas H1 to the next process. The water treatment device A is characterized in that it contains:
The exhaust
在該獨立式之水處理裝置A中,由於從第一噴出口2f所噴出的排氣H,係由非活性氣體簾幕F1所包圍,且如上述在僅遠離第一噴出口2f既定距離的噴出前端由非活性氣體F所稀釋,所以即便朝向第一噴出口2f方向設置蒸氣配管21之噴嘴口21a,且使水蒸氣M從噴嘴口21a噴出,該水蒸氣M仍不會到達噴嘴口21a,也沒有「水之逆擴散」。結果,在第一噴出口2f之正下方,可以將加水分解性之成分氣體進行加水分解處理,且可以將水處理槽20縮短該程度。又,由於水處理裝置A是獨立式,所以也能夠個別地設置於既存的排氣處理裝置。In this independent water treatment device A, since the exhaust gas H ejected from the
第9態樣係關於一種一體地具有裝備有第1態樣至第7態樣中任一態樣的發明(排氣導入噴嘴1)之水處理裝置A的排氣處理裝置X(圖2)。其特徵為,包含:
水槽40,其是將循環用之水M裝滿於底部;及
水處理槽20,其是豎設於水槽40的頂板部41,且內部保持在高濕度環境;及
第1態樣至第7態樣中任一態樣所記載的排氣導入噴嘴1,其是安裝於前述水處理槽20之排氣導入部22,且將從半導體製造裝置S所送來的排氣H吹入至前述水處理槽20內;及
熱分解塔50,其是豎設於水槽40的頂板部41,用以導入在水處理槽20所水洗過的水洗排氣H1,且在內部的熱分解區56進行熱分解;以及
出口洗滌器60,其是豎設於水槽40的頂板部41,用以將熱分解後的熱分解排氣H2進行洗淨並除去有害物質來作為大氣釋放排氣H3,且將該大氣釋放排氣H3釋放至大氣中。The ninth aspect relates to an exhaust gas treatment device X (FIG. 2) integrally provided with a water treatment device A equipped with any one of the first aspect to the seventh aspect of the invention (exhaust gas introduction nozzle 1) . It is characterized by:
根據以上,由於在本裝置X或水處理裝置A所使用的本發明噴嘴1,係在從內管2之第一噴出口2f所噴出的排氣H之周圍設置非活性氣體簾幕F1,所以會如上述地阻礙「水之逆擴散」。結果,第一噴出口2f當然不會在排氣導入配管8內附著加水分解生成物,且即便長時間使用仍不會在該部分發生堵塞。Based on the above, the
以下,按照圖示實施例來說明本發明。圖1係裝備有本發明之獨立式水處理裝置A的排氣處理裝置X(第一實施例),圖2係裝備有本發明之非獨立式水處理裝置A的排氣處理裝置X(第二實施例)。此等為在半導體製造過程中所使用的裝置,例如是以真空泵(vacuum pump)V來抽吸從CVD成膜裝置S所排出的排氣H並送至排氣處理裝置X,且進行熱分解使之無害化而釋放至大氣中的設備。Hereinafter, the present invention will be explained based on the illustrated embodiment. Fig. 1 is an exhaust treatment device X (first embodiment) equipped with the independent water treatment device A of the present invention, and Fig. 2 is an exhaust treatment device X (first embodiment) equipped with the non-independent water treatment device A of the present invention Second embodiment). These are devices used in the semiconductor manufacturing process. For example, a vacuum pump V is used to suck the exhaust gas H discharged from the CVD film forming device S and send it to the exhaust treatment device X, where it undergoes thermal decomposition. A device that makes it harmless and releases it into the atmosphere.
第一實施例的排氣處理裝置X,係由獨立的水處理裝置A、及設置有出口洗滌器60的熱分解裝置B所構成。內建於水處理裝置A的排氣導入噴嘴1,係有圖3的雙重管、以及圖4、圖5中之(a)的三重管(或是其變化例:圖5中之(b))。首先,作為本發明的排氣處理裝置X,係針對圖1來說明,排氣導入噴嘴1則針對雙重管來說明。其後,針對三重管(及其變化例)來說明。最後說明圖2之水處理裝置A已被一體化的排氣處理裝置X。The exhaust gas treatment device X of the first embodiment is composed of an independent water treatment device A and a thermal decomposition device B provided with an
在下述實施例之說明中為了避開繁雜度而在第二實施例中,係以與第一實施例不同的部分為中心來說明,顯示相同作用的部分係附記相同符號並且將該說明援用作為第二實施形態之說明。In the description of the following embodiments, in order to avoid complexity, in the second embodiment, the description is centered on the parts that are different from the first embodiment, and the parts showing the same function are given the same symbols and the description is used as Description of the second embodiment.
圖1的排氣處理裝置X之概略,例如是以真空泵V來抽吸來自CVD成膜裝置S的排氣H,且以連接該真空泵V與水處理裝置A的排氣導入配管8將排氣H送入至水處理裝置A。在水處理裝置A中,係將排氣H中所包含的加水分解性之成分氣體進行加水分解來作為固態的加水分解生成物,並與所供應的水等(加水分解用之噴霧水或加熱水蒸氣)M一起除去。同時伴隨排氣H而被送入的粉塵也同樣進行水洗除去。又,在包含有氯等水溶性氣體的情況下,此也同時以水等M來除去。The outline of the exhaust treatment device X in FIG. 1 is, for example, a vacuum pump V sucks exhaust gas H from the CVD film forming device S, and the exhaust gas is exhausted by an exhaust
加水分解性之成分氣體或粉塵等已被除去後的水洗排氣H1,係藉由排氣管26送入至熱分解塔50,在此已被熱分解之後,送至鄰接的出口側之洗滌器60且在將熱分解後的熱分解排氣H2予以洗淨之後,作為無害之大氣釋放排氣H3來釋放至大氣中。The washing exhaust gas H1 from which the water-decomposable component gas or dust has been removed is sent to the
本發明的水處理裝置A是將如上述半導體製造過程之例如從CVD成膜裝置S所排出的各種排氣H之中包含加水分解性之成分氣體(進而為水溶性之成分氣體)的排氣H,在加熱分解處置之前先行除去,藉此不會發生藉由加水分解生成物所致的內部堵塞,而可以效率佳地處理排氣H的裝置。The water treatment device A of the present invention is an exhaust gas that contains a water-decomposable component gas (and further a water-soluble component gas) among various exhaust gases H discharged from the CVD film forming device S during the semiconductor manufacturing process described above. H, is removed before thermal decomposition treatment, so that internal clogging caused by hydrolysis products will not occur, and the exhaust H can be treated efficiently.
水處理裝置A,係概略由排氣導入噴嘴1、於內部設置有入口側之充填材料層25的水處理槽20、水分供應部30、蒸氣配管21及排氣管26所構成。
水處理槽20,係在位於頂部且作為中空容器的排氣導入部22設置有排氣導入噴嘴1,且在底部儲存有循環用之水M。
比循環用之水M還上方的空間部分,更正確言之為包含充填材料層25且比充填材料層25還上方的空間部分是氣液接觸空間K,且在排氣導入噴嘴1之下方設置有蒸氣配管21。在蒸氣配管21係連接有工廠的蒸氣供應配管(未圖示),且對蒸氣配管21供應著加熱水蒸氣。
蒸氣配管21之下方或旁邊並排設置有入口側之噴霧配管23。
在蒸氣配管21係以包夾排氣導入噴嘴1的方式在其兩側配置有向上的噴嘴口21a,且在排氣導入噴嘴1之兩側使加熱水蒸氣從噴嘴口21a向上噴出。
在入口側之噴霧配管23係設置有向下的噴嘴口23b。該向下的噴嘴口23b係配置於排氣導入噴嘴1之正下方,且從該向下的噴嘴口23b呈放射狀地朝向下方傾注微細之噴霧水滴M。The water treatment device A is roughly composed of an exhaust
在入口側之噴霧配管23的下方係設置有充填物層25,該充填物層25係充填有塑膠(plastic)或陶瓷(ceramic)或是玻璃(glass)製的充填物(例如,特勒填料(Tellerette)(註冊商標)或拉西環(Raschig ring))。A
在充填物層25之下方的空間係設置有排氣管26,該排氣管26係從該空間拉出,且到達後述的熱分解塔50之水洗排氣導入部53。該排氣管26係開口於充填物層25之下方的空間。然後,在圖1的情況下,該排氣管26,係通過循環用之水M而從水處理槽20之側面朝外拉出,且連接於熱分解塔50之水洗排氣導入部53。(當然,亦可不通過循環用之水M而直接從水處理槽20之側面朝外拉出。)。
該實施例的排氣管26之入口開口27,係從循環用之水M的水面朝向上方延伸,且在充填物層25之正下方面向充填物層25之下表面而開口。An
在入口側之噴霧配管23係連接有入口側之抽水配管(pumping pipe)31,該入口側之抽水配管31係從水處理槽20之底部豎起,且構成水分供應部30。在該入口側之抽水配管31係設置有入口側之揚升泵(lift pump )34,將積留於水處理槽20之底部的循環用之水M供應至入口側之噴霧配管23。更且,在水處理槽20之底部係設置有用以維持循環用之水M的水位的溢流(overflow)配管37。The
排氣導入噴嘴1之實施形態1,為如圖3所示的雙重管噴嘴,實施形態2係有圖4、圖5中之(a)所示的三重管噴嘴、或圖5中之(b)所示的其變化例等。首先,針對實施形態1加以說明,其次針對實施形態2加以說明。為了避免說明的重複,在實施形態2中係以與實施形態1不同的部分為中心來說明,已省略的部分則援用實施形態1的說明。在實施形態1與實施形態2中,相同的構件係附記同一符號。The first embodiment of the exhaust
排氣導入噴嘴1的實施形態1,為由內管2、外管5所構成的雙重管。在圖之實施形態中,內管2,係包含:排氣導入用之內管本體2h;以及被覆於其上部外表面的鞘管(sheath pipe)4。內管本體2h及外管5係由如高價之耐腐蝕性優異的Ni(鎳)基之超合金(例如,英高鎳(Inconel)或赫史特合金(Hastelloy)(皆為註冊商標)、或如SUS316L的高耐蝕性不鏽鋼、或是耐熱耐蝕性樹脂(例如,聚醚醚酮(polyetheretherketone)樹脂)所形成,鞘管4係由具有普通之耐蝕性的金屬材料(例如,如SUS304的不鏽鋼)所形成。當然,可以將鞘管4與排氣導入用之內管本體2h一體化。The first embodiment of the exhaust
排氣導入用之內管本體2h的入口部分2b,係連接於排氣導入配管8的出口。內管本體2h之剖面形狀,其入口部分2b是直至中間部分2e為止形成較粗的圓形直管狀。中間部分2e,係以其內徑朝向出口部分2g漸減的方式來縮小。出口部分2g之內表面形狀,係形成比入口部分2b還細之內徑不變的直管形。該出口部分2g之前端開口為第一噴出口2f,其端面為第一開口端2k。(再者,雖然並未圖示,但是出口部分2g也可為與中間部分2e相同的錐形且至前端之第一開口端為止呈頭尖狀。)。
然後,內管本體2h之外表面係從入口側端面至中段部分為止形成直管形,從中段部分至前端之第一開口端2k為止形成相同的錐形且呈頭尖狀。從而,在圖式的情況下,在內管本體2h之出口部分2g中,其厚度是朝向第一開口端2k逐漸地變薄。為了不在該部分(第一開口端2k與其近旁)附著堆積反應生成物或粉塵,較佳是事先形成刀緣(knife edge)狀。再者,內管本體2h之外徑朝向第一開口端2k漸減的部分是第一噴嘴部2a。The
外管5,係形成有開口於上表面中央的緣筒狀之收納凹部5b,從該收納凹部5b之中央朝向下方穿設有頭尖狀(漏斗狀)的噴嘴孔。穿設有該噴嘴孔的部分為第二噴嘴部5a,而到達其下表面開口的其外表面,係由與噴嘴孔相同的錐形所形成。將前述下表面開口作為第二開口端5k。The
內管2是從上方插入於上述收納凹部5b內,內管本體2h之第一噴嘴部2a是插入於外管5之第二噴嘴部5a內。然後,鞘管4之凸緣部是以氣密狀態安裝於外管5之上表面。
在內管本體2h的第一噴嘴部2a之外周面2r與外管5的第二噴嘴部5a之內周面之間遍及於全周地形成有均等的間隙T1。間隙T1之環狀的前端開口為第二噴出口5f。
再者,在此,雖然該間隙T1係從入口至出口(第二噴出口5f)為止成為相同的寬度,但是為了提高非活性氣體F之噴出速度,亦可越來到前端就越逐漸變窄。
然後,在外管5之上部側面係連接有非活性氣體供應配管6,且與已形成於收納凹部5b之內表面與內管本體2h之外表面之間的貯氣槽7連通。貯氣槽7係與到達第二噴出口5f的間隙T1連通。The
雖然是處於第一開口端2k與第二開口端5k之位置關係,但是如由圖3中之(a)的圓所包圍的部分,能以第二開口端5k比第一開口端2k還朝向排氣噴出方向突出的方式來配置。以W1來表示突出量。
圖3中之(b)為圖3中之(a)的另一例,且為如以從前述圓拉出之拉出線所示的圓內之圖般地將前述第一開口端2k與第二開口端5k形成相同的高度(同一平面)之例。為了預防「水之逆擴散」,突出量W1是以較長者為佳。但是,如圖3中之(b)般,即便突出量W1為零的情況下,只要後述的非活性氣體簾幕F1之遮蔽力充分,就可以預防「水之逆擴散」。Although it is in the positional relationship between the first
熱分解裝置B,係由水槽40、熱分解塔50及出口側之洗滌器60所構成。
熱分解塔50與出口側之洗滌器60,係並排設置地豎設於水槽40之上。在熱分解塔50係導入有與從前述水處理裝置A延伸的排氣管26連結並經水洗過的水洗排氣H1。在水槽40之底部係儲存有循環水M,藉由溢流配管42來保持於一定的水位,且藉由供水管45來供應有與溢流所流出的水M相同之新的水M。The thermal decomposition device B is composed of a
熱分解塔50與出口側之洗滌器60的底部係開口於水槽40,熱分解塔50的底部與出口側之洗滌器60的底部係在水槽40的頂板部41與循環用之水M之間的空間連通。The bottom of the
熱分解塔50是利用了大氣壓電漿(plasma)的水洗排氣H1之熱分解處理裝置,且包含:塔本體52;及非遷移式之電漿噴流炬(plasma jet torch)51,其是設置於前述塔本體52之頂部,且朝向前述塔本體52之內部生成高溫的電漿噴流P;以及水洗排氣導入部53,其是以包圍前述塔本體52之上端外周的方式所設置的環狀之空間,且水處理裝置A的排氣管26之出口,是連接於其側面。The
電漿噴流炬51,係於內部具有電漿產生室(未圖示),在電漿噴流炬51之下表面中心部係設置有使之在電漿產生室內生成的電漿噴流P噴出的電漿噴流噴出孔(未圖示)。在電漿噴流炬51之側面上部係依需要而設置有如氮氣之作動氣體輸送供應配管(未圖示)。The
水洗排氣導入部53內部空間係遍及於周方向全周地形成有水洗排氣流路53a,且從排氣管26之出口所供應來的水洗排氣H1會回流至內部的排氣流路53a。在排氣流路53a,係具有相對於上述電漿噴流P之噴出部分而開口於切線方向的開口部(未圖示)。The internal space of the washing
在水洗排氣導入部53之下端開口部係安裝有直管式之塔本體52,該塔本體52係由陶瓷等的耐熱性材料所構成,且底部開口於水槽40。該塔本體52,係圍繞電漿噴流P與所吹入的水洗排氣H1,且在其內部(熱分解區56)進行水洗排氣H1之熱分解,外表面係由絕熱材料(未圖示)所覆蓋。然後,在塔本體52之上端外周部分係設置有貯水部55,水從塔本體52之上端溢流並在塔本體52之內周面全面形成水壁57。在貯水部55係從外部供應有溢流部分的水。A straight-
水槽40是如中空長方體的構件,且在其頂板部41並排設置有前述熱分解塔50與後述的出口洗滌器60。水槽40,係在底部裝滿有循環用之水M,且該水M與頂板部41之間成為熱分解排氣H2之流通路。然後,設置有將內部之水位保持於固定的溢流配管42。The
出口側之洗滌器60,為所謂的濕式之洗滌器,當說明其概略結構時,是由以下所構成:直管式之洗滌器本體60a,其是豎設於水槽40之頂板部41;及出口側之抽水配管61;及出口側之揚升泵64,其是設置於出口側之抽水配管61的中途;及出口側之噴霧配管63,其是連接於前述抽水配管61,且設置於洗滌器60a之內部的頂部近旁;及出口側之噴嘴口63a,其是設置於該噴霧配管63,且將鹼性液體、酸性液體或是水或蒸氣等的藥液M形成加熱蒸氣狀態並向下散布;及出口側之充填材料層65,其是設置於出口側之噴嘴口63a的下方且用以進行氣液接觸;及排氣鼓風機(exhaust blower)67,其是設置於洗滌器本體60a之頂部;以及大氣釋放用排氣管68,其是設置於該排氣鼓風機67。散布後的上述藥液M是被收納在水槽40。The
其次,針對圖1之排氣處理裝置X中的排氣導入噴嘴1之作用加以說明。將非活性氣體F(例如,氮氣或氬氣(argon gas))供應至排氣導入噴嘴1之非活性氣體供應配管6。所供應來的非活性氣體F係通過貯氣槽7並通過內管本體2h的第一噴嘴部2a之外周面2r與外管5的第二噴嘴部5a之內周面之間的間隙T1而從前端的第二噴出口2f呈圓筒狀地噴出非活性氣體F。將該噴出部分作為非活性氣體簾幕F1。該非活性氣體F係從排氣H之導入前所供應。Next, the function of the exhaust
在此,將間隙T2之形狀形成頭細的圓錐形,係為了提高從外管5之第二噴出口5f所噴出的非活性氣體F之流速,且形成以較少的非活性氣體F之使用量具有充分之遮蔽功能的非活性氣體簾幕F1。從此觀點來說,也可相對於排氣導入用之內管本體2h的第一噴嘴部2a之外周面2r的錐形角度而加大外管5的第二噴嘴部5a之內周面的錐形角度,並將形成於兩者之間的間隙T1越來到前端側就形成越窄。
又,也可將非活性氣體簾幕F1之流速形成與後述的排氣H之流速相同,或加快非活性氣體簾幕F1之流速。越加快非活性氣體簾幕F1之流速,非活性氣體簾幕F1就越伸長,且越提升相對於排氣H的屏蔽效果。此點在圖4的情況也是同樣。Here, the shape of the gap T2 is formed into a tapered conical shape, in order to increase the flow rate of the inert gas F sprayed from the
又,此時,入口側之抽水配管31的提升泵34也會作動,且抽取循環用之水M,而供應至入口側之噴霧配管23。藉此,水M會從向下的噴嘴口23b成為較細的水滴並朝向下方如傘般地散布。
從蒸氣配管21之向上的噴嘴口21a在排氣導入噴嘴1之兩側往上噴出加熱水蒸氣M。In addition, at this time, the
然後,當使電漿噴流炬51的控制部(未圖示)之電源呈接通時,就會在大氣壓下生成有超高溫(約10000℃前後)的氣體流,亦即生成非遷移式的電漿噴流P,且該電漿噴流P從電漿噴流噴出孔噴出至塔本體52內。接著,在生成電漿噴流P之後,透過真空泵V將從如CVD成膜裝置的半導體製造裝置S所排出的排氣H導入至水處理裝置A內。Then, when the power supply of the control unit (not shown) of the
排氣H之導入係通過排氣導入噴嘴1所進行。所導入的排氣H係通過排氣導入用之內管本體2h,在中間部分2e被縮小,且增加流速以從出口部分2g成為較細的圓柱狀之氣流噴出至呈圓筒狀流動的非活性氣體簾幕F1內(圖3中之(a))。The introduction of the exhaust gas H is carried out through the exhaust
該非活性氣體簾幕F1,係沿第一噴嘴部2a之外周面2r成為頭尖之較細的圓錐狀之氣流而噴出。該頭尖的非活性氣體簾幕F1,係一邊遮蔽排氣H之全周一邊僅以某程度之距離縮小排氣H的方式朝向下方流動。然後,非活性氣體簾幕F1之流速會逐漸下降,且與排氣H接觸並與排氣H混合而稀釋排氣H。將該區域作為混合區域R。
在該混合區域R係供從向上的噴嘴口21a往上噴出的加熱水蒸氣M進入,且與加水分解性之成分氣體接觸並將之進行加水分解,而生成微細的固態反應生成物。在排氣H中包含有粉塵的情況下,可同時由加熱水蒸氣所捕集。The inert gas curtain F1 is jetted by a stream of a narrow cone-shaped tip along the outer
在該混合區域R中,由於排氣H係如上述地被稀釋,所以「水之逆擴散」會變弱,「水分」不會從該混合區域R到達內管2的第一噴嘴部2a之第一噴出口2f。由於從前述第一噴出口2f至該混合區域R係如上述地藉由非活性氣體簾幕F1所遮蔽,所以其周圍的「水分」依然不會到達前述第一噴出口2f。結果,不會在第一噴出口2f發生加水分解生成物之附著。In the mixing region R, since the exhaust gas H is diluted as described above, the "reverse diffusion of water" will be weakened, and the "moisture" will not reach the
如圖3中之(a)所示,當外管5之第二開口端5k僅以突出量W1從第一開口端2k突出時,突出量W1就會加上非活性氣體簾幕F1之噴出長度,僅該部分就能在排氣H中增加屏蔽效果。
另一方面,在該時間點,設置於出口洗滌器60的排氣鼓風機67會運轉。藉此,排氣會從水處理裝置A通過熱分解塔50,且朝向出口洗滌器60而流動。在水處理槽20內,如上述由微細水滴與加熱水蒸氣所捕集到的微細之固態反應生成物或粉塵,係乘著該氣流來與上述微細水滴或加熱水蒸氣一起掉落。As shown in Fig. 3(a), when the second
然後,排氣H係一邊與水處理槽20內之水等M重複進行氣液接觸且一邊到達入口側之充填材料層25。在入口側之充填材料層25中,水等M是流動至多孔質(porous)的充填材料之內部表面或空隙內,且一邊與排氣H重複進行氣液接觸一邊通過充填材料層25。
藉此,可在水處理槽20內大致進行加水分解性之成分氣體的除去或粉塵的捕集,水等M係從充填材料層25滴下至已積留於水處理槽20之底部的循環用之水M,氣體部分則成為正常的水洗排氣H1,並被送至作為下一個製程的熱分解塔50。
在熱分解塔50中,由於加水分解性之成分氣體已被除去,所以不會發生堵塞,而能在水分之存在下在熱分解塔50內進行排氣之高效率的熱分解。Then, the exhaust gas H reaches the filling
在此已被熱分解的熱分解排氣H2係被送至出口洗滌器60,且被充分洗淨並且降低至能夠釋放至大氣中的溫度為止,且利用排氣鼓風機67來釋放至大氣中。The thermally decomposed exhaust gas H2 that has been thermally decomposed here is sent to the
其次,針對圖4所示的實施形態2之排氣導入噴嘴1加以說明。該排氣導入噴嘴1為三重管,且以水分噴出噴嘴10包圍外管2之第二噴嘴部5a的方式所設置。
在水分噴出噴嘴10,係以包圍第二噴嘴部5a之周圍全周的方式設置有第三噴嘴部10a。第三噴嘴部10a,係形成由與外管5之第二噴嘴部5a相同之錐形所形成的頭圓錐形,且在外管5的第二噴嘴部5a之外周面5r與第三噴嘴部10a之內周面之間遍及於第二噴嘴部5a之外周面全周地形成有水分噴出用之間隙T2。
在該間隙T2,係經由貯水槽17而連接於水分供應配管16。在圖4中,雖然水分供應配管16係連接於外管5之側面,且通過已設置於外管5的通水路而連接於貯水槽17,但是亦可連接於如圖5中之(b)所示之個別的水分噴出噴嘴10。Next, the exhaust
該三重管的排氣導入噴嘴1之第一開口端2k、第二開口端5k、第三開口端10k,係有如圖4中之(b)般地形成於一致之位置的情況、與圖4中之(a)般地不一致的情況。在不一致的情況下,第一開口端2k、第二開口端5k係與實施形態1同樣,且第二開口端5k比第一開口端2k還突出。第三開口端10k,係比第二開口端5k還後退,之後以W2來表示該後退距離。The
針對該三重管的排氣導入噴嘴1之作用加以說明。在此情況下,從第一噴出口2f、第二噴出口5f噴出的排氣H與非活性氣體簾幕F1係如同上述。然後,從上述間隙T2之前端的第三噴出口10f,以包圍其內側的非活性氣體簾幕F1之周圍的方式,與該非活性氣體簾幕F1平行地噴出加水分解用之水分(加熱蒸氣或微細水滴)M。由於該間隙T2與非活性氣體簾幕F1之形成用的間隙T1為平行,所以從間隙T2噴出至僅以某距離遠離第一噴出口2f之位置為止的加水分解用之水等M係與非活性氣體簾幕F1平行地噴出,在該範圍內不會突破非活性氣體簾幕F1而與內側之排氣H接觸。The function of the exhaust
在此,在第三開口端10k比第二開口端5k還朝向上方後退的情況下(圖4中之(a)),非活性氣體簾幕F1係至少僅以該後退距離W2由外側噴嘴5a所屏蔽(shield)。
如圖4中之(b)般,即便是在第三開口端10k與第二開口端5k存在於相同位置的情況下,若非活性氣體簾幕F1之流速較快而屏蔽效果充分的話,就不會因加水分解用之水等M而使屏蔽被破壞。
若加水分解用之水等M,為加熱水蒸氣,則突破非活性氣體簾幕F1之力係比微細水滴更弱,非活性氣體簾幕F1之屏蔽效果變得更高。Here, in the case where the
圖5中之(b)為設置複數個噴嘴孔10f’來取代用以使圖5中之(a)的加水分解用之水等M噴出的環狀之間隙T2之例。加水分解用之水等M是能從該複數個噴嘴孔10f’如上述地噴出。Fig. 5(b) is an example in which a plurality of
然後,當加水分解用之水等M是如上述般地從間隙T2之第三噴出口10f(或是噴嘴孔10f’)朝向非活性氣體簾幕F1平行地噴出時,非活性氣體簾幕F1與排氣H就會隨著流速之降低在某固定之距離處混合,排氣H中的加水分解性之氣體成分會在該混合區域如上述所述般地被加水分解並產生反應生成物,且與加水分解用之水等M一起落下。
如以上的獨立式之水處理裝置A,係有可以單獨設置於既有設備的優點(merit)。Then, when the water for hydrolysis and the like M are ejected in parallel from the
相對於此,圖2為在排氣處理裝置X內建有水處理裝置A的非獨立式。排氣導入噴嘴1,係設置於已一體地內建在排氣處理裝置X的水處理裝置A,且在加熱分解處理之前階段進行加水分解性之成分氣體或粉塵的除去。作為裝置X的作用係如同已述般。In contrast, FIG. 2 shows a non-independent type in which the water treatment device A is built in the exhaust gas treatment device X. As shown in FIG. The exhaust
1:排氣導入噴嘴 2:內管 2a:第一噴嘴部 2b:入口部分 2e:中間部分 2f:第一噴出口 2g:出口部分 2h:內管本體 2k:第一開口端 2r:第一噴嘴部之外周面 4:鞘管 5:外管 5a:第二噴嘴部 5b:收納凹部 5f:第二噴出口 5k:第二開口端 5r:第二噴嘴部之外周面 6:非活性氣體供應配管 7:貯氣槽 8,120:排氣導入配管 10:水分噴出噴嘴 10a:第三噴嘴部 10f:第三噴出口 10f’:水分噴出噴嘴孔 10k:第三開口端 16:水分供應配管 17:貯水槽 20:水處理槽 21:蒸氣配管 21a:向上的噴嘴口 22:排氣導入部 23:入口側之噴霧配管 23b:向下的噴嘴口 25:入口側之充填材料層(充填物層) 26:排氣管 27:入口開口 30:水分供應部 31:入口側之抽水配管 34:入口側之揚升泵 37,42:溢流配管 40:水槽 41:頂板部 45:供水管 50,125:熱分解塔 51:電漿噴流炬 52,128:塔本體 53:水洗排氣導入部 53a:排氣流路 55:貯水部 56,126:熱分解區 57:水壁 60,140:出口洗滌器 60a:洗滌器本體 61:出口側之抽水配管 63:出口側之噴霧配管 63a:噴嘴口 64:出口側之揚升泵 65:出口側之充填材料層 67:排氣鼓風機 68:大氣釋放用排氣管 100:習知的噴嘴 101:噴出口 110:入口洗滌器 111:噴淋配管 112:噴霧噴嘴 115:充填材料層 121:排氣導入噴嘴連接部分 127:排氣導入管 129:加熱器 150:水槽 151:隔壁 A:水處理裝置 B:熱分解裝置 F:非活性氣體 F1:非活性氣體簾幕 H:排氣 H1:水洗排氣 H2:熱分解排氣 H3:大氣釋放排氣 K:氣液接觸空間 M:水等(噴霧水滴、微細水滴、加熱水蒸氣、循環用之水、藥液) P:電漿噴流 R:混合區域 S:半導體製造裝置(半導體成膜裝置) T1:活性氣體簾幕之形成用的間隙 T2:水等(噴霧脆液、加熱水蒸氣)噴出用的間隙 V:真空泵 W1:第一與第二開口端間的突出量 W2:第二與第三開口端間的後退距離 X:本發明的排氣處理裝置 Y:習知的排氣處理裝置1: Exhaust gas inlet nozzle 2: inner tube 2a: The first nozzle part 2b: entrance section 2e: middle part 2f: The first outlet 2g: export part 2h: Inner tube body 2k: first open end 2r: Outer peripheral surface of the first nozzle part 4: sheath 5: Outer tube 5a: The second nozzle part 5b: Storage recess 5f: The second outlet 5k: second open end 5r: Outer peripheral surface of the second nozzle part 6: Inert gas supply piping 7: Air storage tank 8,120: Exhaust gas introduction piping 10: Moisture spray nozzle 10a: The third nozzle part 10f: The third outlet 10f’: Moisture spray nozzle hole 10k: third open end 16: Water supply piping 17: Water storage tank 20: Water treatment tank 21: Steam piping 21a: Upward nozzle opening 22: Exhaust introduction part 23: Spray piping on the inlet side 23b: downward nozzle opening 25: Filling material layer on the entrance side (filling layer) 26: Exhaust pipe 27: entrance opening 30: Moisture Supply Department 31: Pumping piping on the inlet side 34: Ascending pump on the inlet side 37, 42: Overflow piping 40: sink 41: Top plate 45: water supply pipe 50,125: Thermal decomposition tower 51: Plasma jet torch 52, 128: Tower body 53: Washing exhaust introduction part 53a: Exhaust flow path 55: Water Storage Department 56,126: Thermal decomposition zone 57: Water Wall 60,140: Outlet scrubber 60a: Scrubber body 61: Pumping piping on the outlet side 63: Spray piping on the outlet side 63a: nozzle port 64: Ascending pump on the outlet side 65: Filling material layer on the outlet side 67: Exhaust blower 68: Exhaust pipe for atmospheric release 100: The conventional nozzle 101: spout 110: Inlet scrubber 111: Spray piping 112: spray nozzle 115: Filling material layer 121: Exhaust gas inlet nozzle connection part 127: Exhaust inlet pipe 129: heater 150: sink 151: Next Door A: Water treatment device B: Thermal decomposition device F: Inert gas F1: Inactive gas curtain H: Exhaust H1: Washing exhaust H2: Thermal decomposition exhaust H3: Atmospheric release exhaust K: Gas-liquid contact space M: Water, etc. (spray water droplets, fine water droplets, heated steam, circulating water, chemical liquid) P: Plasma jet R: Mixed area S: Semiconductor manufacturing equipment (semiconductor film forming equipment) T1: The gap for the formation of the active gas curtain T2: The gap for spraying water, etc. (spraying brittle liquid, heating steam) V: Vacuum pump W1: The amount of protrusion between the first and second open ends W2: The retreat distance between the second and third open ends X: Exhaust gas treatment device of the present invention Y: Conventional exhaust treatment device
[圖1] 係包含本發明之獨立式水處理裝置的排氣處理設備之流程圖。
[圖2] 係包含本發明之非獨立式水處理裝置的排氣處理設備之流程圖。
[圖3] 中之(a)係圖1的排氣導入噴嘴之實施形態1的剖視圖,圖3中之(b)係該噴嘴的噴出口之另一例的剖視圖。
[圖4] 中之(a)係圖1的排氣導入噴嘴之實施形態2的剖視圖,圖4中之(b)係該噴嘴的噴出口之另一例的剖視圖。
[圖5] 中之(a)係從下方觀察圖4之排氣導入噴嘴的示意圖,圖5中之(b)係其變化例。
[圖6] 係習知例之排氣處理設備的流程圖。[Fig. 1] It is a flowchart of an exhaust gas treatment equipment including the stand-alone water treatment device of the present invention.
[Figure 2] is a flow chart of the exhaust gas treatment equipment including the non-independent water treatment device of the present invention.
[FIG. 3] (a) is a cross-sectional view of
1:排氣導入噴嘴 1: Exhaust gas inlet nozzle
8:排氣導入配管 8: Exhaust introduction piping
20:水處理槽 20: Water treatment tank
21:蒸氣配管 21: Steam piping
21a:向上的噴嘴口 21a: Upward nozzle opening
22:排氣導入部 22: Exhaust introduction part
23:入口側之噴霧配管 23: Spray piping on the inlet side
23b:向下的噴嘴口 23b: downward nozzle opening
25:入口側之充填材料層(充填物層) 25: Filling material layer on the entrance side (filling layer)
26:排氣管 26: Exhaust pipe
27:入口開口 27: entrance opening
30:水分供應部 30: Moisture Supply Department
31:入口側之抽水配管 31: Pumping piping on the inlet side
34:入口側之揚升泵 34: Ascending pump on the inlet side
37,42:溢流配管 37, 42: Overflow piping
40:水槽 40: sink
41:頂板部 41: Top plate
45:供水管 45: water supply pipe
50:熱分解塔 50: Thermal decomposition tower
51:電漿噴流炬 51: Plasma jet torch
52:塔本體 52: Tower body
53:水洗排氣導入部 53: Washing exhaust introduction part
53a:排氣流路 53a: Exhaust flow path
55:貯水部 55: Water Storage Department
56:熱分解區 56: Thermal decomposition zone
57:水壁 57: Water Wall
60:出口洗滌器 60: Outlet scrubber
60a:洗滌器本體 60a: Scrubber body
61:出口側之抽水配管 61: Pumping piping on the outlet side
63:出口側之噴霧配管 63: Spray piping on the outlet side
63a:噴嘴口 63a: nozzle port
64:出口側之揚升泵 64: Ascending pump on the outlet side
65:出口側之充填材料層 65: Filling material layer on the outlet side
67:排氣鼓風機 67: Exhaust blower
68:大氣釋放用排氣管 68: Exhaust pipe for atmospheric release
A:水處理裝置 A: Water treatment device
B:熱分解裝置 B: Thermal decomposition device
F:非活性氣體 F: Inert gas
H:排氣 H: Exhaust
H1:水洗排氣 H1: Washing exhaust
H2:熱分解排氣 H2: Thermal decomposition exhaust
H3:大氣釋放排氣 H3: Atmospheric release exhaust
K:氣液接觸空間 K: Gas-liquid contact space
M:水等(噴霧水滴、微細水滴、加熱水蒸氣、循環用之水、藥液) M: Water, etc. (spray water droplets, fine water droplets, heated steam, circulating water, chemical liquid)
P:電漿噴流 P: Plasma jet
S:半導體製造裝置(半導體成膜裝置) S: Semiconductor manufacturing equipment (semiconductor film forming equipment)
V:真空泵 V: Vacuum pump
X:本發明的排氣處理裝置 X: Exhaust gas treatment device of the present invention
Claims (7)
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WOPCT/JP2018/041140 | 2018-11-06 | ||
PCT/JP2018/041140 WO2020095358A1 (en) | 2018-11-06 | 2018-11-06 | Exhaust gas introduction nozzle, water treatment device, and exhaust gas treatment device |
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TW202023675A TW202023675A (en) | 2020-07-01 |
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JP (1) | JP6950881B2 (en) |
KR (1) | KR20210057154A (en) |
CN (1) | CN113015573A (en) |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000271421A (en) * | 1999-03-24 | 2000-10-03 | Seikow Chemical Engineering & Machinery Ltd | Waste gas washing device |
TW200829325A (en) * | 2007-01-15 | 2008-07-16 | Kanken Techno Co Ltd | Apparatus and method for processing gas |
JP2008183563A (en) * | 2008-05-07 | 2008-08-14 | Anemosu:Kk | Removing apparatus for dissimilar substance in gas |
CN103316561A (en) * | 2012-03-22 | 2013-09-25 | 康肯科技股份有限公司 | Gas treating apparatus |
CN107073392A (en) * | 2014-10-06 | 2017-08-18 | 康肯科技股份有限公司 | Emission-control equipment |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2767856B2 (en) * | 1989-02-07 | 1998-06-18 | 三井化学株式会社 | Exhaust gas treatment device and exhaust gas treatment method |
AT397214B (en) * | 1992-03-30 | 1994-02-25 | Chemie Linz Gmbh | DEVICE FOR DEPOSITING MELAMINE |
JP3016690B2 (en) | 1994-05-30 | 2000-03-06 | カンケンテクノ株式会社 | Semiconductor manufacturing exhaust gas abatement method and apparatus |
JP3375341B2 (en) * | 1995-09-08 | 2003-02-10 | 日立造船株式会社 | Exhaust gas treatment method |
JP4067067B2 (en) * | 1998-06-24 | 2008-03-26 | 株式会社トクヤマ | Silane-containing liquid processing equipment |
JP4174396B2 (en) * | 2003-09-19 | 2008-10-29 | カンケンテクノ株式会社 | Exhaust gas introduction structure and exhaust gas treatment apparatus using the structure |
US7771514B1 (en) * | 2004-02-03 | 2010-08-10 | Airgard, Inc. | Apparatus and method for providing heated effluent gases to a scrubber |
CN101592167A (en) * | 2008-05-26 | 2009-12-02 | 刘伟杰 | A kind of multifunctional steam jet draught fan |
JP2010144632A (en) * | 2008-12-19 | 2010-07-01 | Ud Trucks Corp | Exhaust emission control device |
CN104722170A (en) * | 2015-02-27 | 2015-06-24 | 广东电网有限责任公司电力科学研究院 | Method and dedicated device for promoting growth of PM2.5 by combining sound and mist |
DE102015107015A1 (en) * | 2015-05-05 | 2016-11-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Exhaust gas treatment device for exhaust gas of a small combustion plant and method for the treatment of exhaust gas of a small combustion plant |
CN108619876A (en) * | 2018-07-09 | 2018-10-09 | 安徽京仪自动化装备技术有限公司 | The purifier of fluoride in a kind of manufacture of semiconductor exhaust gas |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000271421A (en) * | 1999-03-24 | 2000-10-03 | Seikow Chemical Engineering & Machinery Ltd | Waste gas washing device |
TW200829325A (en) * | 2007-01-15 | 2008-07-16 | Kanken Techno Co Ltd | Apparatus and method for processing gas |
JP2008183563A (en) * | 2008-05-07 | 2008-08-14 | Anemosu:Kk | Removing apparatus for dissimilar substance in gas |
CN103316561A (en) * | 2012-03-22 | 2013-09-25 | 康肯科技股份有限公司 | Gas treating apparatus |
CN107073392A (en) * | 2014-10-06 | 2017-08-18 | 康肯科技股份有限公司 | Emission-control equipment |
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TW202023675A (en) | 2020-07-01 |
CN113015573A (en) | 2021-06-22 |
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