JP2000271421A - Waste gas washing device - Google Patents

Waste gas washing device

Info

Publication number
JP2000271421A
JP2000271421A JP11079689A JP7968999A JP2000271421A JP 2000271421 A JP2000271421 A JP 2000271421A JP 11079689 A JP11079689 A JP 11079689A JP 7968999 A JP7968999 A JP 7968999A JP 2000271421 A JP2000271421 A JP 2000271421A
Authority
JP
Japan
Prior art keywords
pipe
exhaust gas
gas
water
washing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11079689A
Other languages
Japanese (ja)
Other versions
JP3476126B2 (en
Inventor
Kazuto Yamazaki
和人 山崎
Hitoshi Kobayashi
仁 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seikow Chemical Engr and Machinery Ltd
Original Assignee
Seikow Chemical Engr and Machinery Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seikow Chemical Engr and Machinery Ltd filed Critical Seikow Chemical Engr and Machinery Ltd
Priority to JP07968999A priority Critical patent/JP3476126B2/en
Publication of JP2000271421A publication Critical patent/JP2000271421A/en
Application granted granted Critical
Publication of JP3476126B2 publication Critical patent/JP3476126B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To reduce the removing frequency of the adhered matter on a gas inlet pipe and also to improve the washing efficiency of waste gas with respect to a waste gas washing device that a turning water chamber is arranged at the upper end of an introducing pipe whose lower end is communicated to a water spray washing part and a waste gas introducing part forming water film on the inner surface of the introducing pipe by the turning flow of the washing water flowed down from a circular gap between the gas inlet pipe at its center is arranged at the proceeding stage of the water spray washing part. SOLUTION: A gas inlet pipe 30 of a waste gas introducing part 11 has a double pipe structure of an outside pipe and a inside pipe, and dry gas is supplied to a gap between the outside pipe and the inside pipe, and the lower end of the outside pipe coming into contact with washing water is interrupted from the waste gas to prevent an adhesive material from being adhered to the gas inlet pipe 30. Also, a waste gas washing device 10 which is compact and high in washing effect is formed by forming integrally a packed material treating part 16 at the post stage of the water spray washing part 14 and arranging a Venturi part 15 for transferring treated gas at the water spray washing part 14 to the packed material treating part 16, at the inside of the device.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、付着性物質を含む
排ガス、特に半導体製造工程から排出されるシラン系ガ
スを含む排ガスの洗浄装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for cleaning exhaust gas containing an adhering substance, particularly exhaust gas containing a silane-based gas discharged from a semiconductor manufacturing process.

【0002】[0002]

【従来の技術】半導体製造工程から排出される排ガスに
は、SiO2等の固体微粒子、HCl、Cl2 等の塩素
化合物、及びモノシラン(SiH4)、ジクロロシラン
(SiH2Cl2)、クロロシラン(SiHCl3)等の
シラン系ガスが含まれている。シラン系ガスは水と反応
してSiO2 と塩素化合物とに分解するため、上記の排
ガスは、散水洗浄装置によって洗浄処理される。しか
し、散水洗浄装置のガス入口管に洗浄水飛沫の飛来等に
よって水分が来ると、排ガス中のシラン系ガスが水分と
が反応してガス入口管内に粘着性のあるゲル状の反応生
成物が析出し、これに排ガス中のSiO2 等の固体微粒
子が付着して付着物が成長するため、ガス入口管が短時
間で閉塞する。そのため半導体製造工程の運転を頻繁に
停止してガス入口管内の付着物を除去する必要がある。
2. Description of the Related Art Exhaust gas discharged from a semiconductor manufacturing process includes solid fine particles such as SiO 2 , chlorine compounds such as HCl and Cl 2 , monosilane (SiH 4 ), dichlorosilane (SiH 2 Cl 2 ), chlorosilane ( Silane-based gas such as SiHCl 3 ). Since the silane-based gas reacts with water and decomposes into SiO 2 and a chlorine compound, the exhaust gas is cleaned by a water spray cleaning device. However, when water comes into the gas inlet pipe of the water spray cleaning device due to splashing of washing water or the like, the silane-based gas in the exhaust gas reacts with the water, and a sticky gel-like reaction product is formed in the gas inlet pipe. Precipitates, and solid fine particles such as SiO 2 in the exhaust gas adhere to the deposits to grow deposits, so that the gas inlet pipe is closed in a short time. Therefore, it is necessary to frequently stop the operation of the semiconductor manufacturing process to remove the deposits in the gas inlet pipe.

【0003】ガス入口管への固体微粒子の付着を防止す
る排ガス導入部を散水洗浄部の前段に設けた排ガス洗浄
装置が米国特許第4,986,838号明細書に開示され
ている。その洗浄装置を図3、排ガス導入部の拡大図を
図4に示す。
[0003] US Patent No. 4,986,838 discloses an exhaust gas cleaning apparatus in which an exhaust gas introduction section for preventing the attachment of solid fine particles to a gas inlet pipe is provided in front of a water spray cleaning section. FIG. 3 shows the cleaning device, and FIG. 4 is an enlarged view of the exhaust gas introduction section.

【0004】図3に示すように、排ガス処理装置100
は、下部洗浄室102と上部洗浄室103とからなる散
水洗浄部104と、散水洗浄部104に排ガスを導入す
る排ガス導入部105とで構成されている。ガス導入部
105は、下端が下部洗浄室102に連通する導入管1
06の上端に、縮径底部107を有する周壁108を設
けてその中心にガス入口管109を挿入し、縮径底部1
07との間に環状間隙110を有する円筒状の旋回水室
111を形成したものである。洗浄水入口112から洗
浄水を旋回水室111の円筒内面に対して接線方向に供
給して旋回水室111内で洗浄水を旋回させると、環状
間隙110から流下する旋回水流113により導入管1
06の内面全体に水膜114が形成される。
[0004] As shown in FIG.
Is composed of a sprinkling washing section 104 composed of a lower washing chamber 102 and an upper washing chamber 103, and an exhaust gas introducing section 105 for introducing exhaust gas into the sprinkling washing section 104. The gas introduction unit 105 has an introduction pipe 1 whose lower end communicates with the lower cleaning chamber 102.
06, a peripheral wall 108 having a reduced diameter bottom 107 is provided, and a gas inlet pipe 109 is inserted into the center of the peripheral wall 108.
07 and a cylindrical swirling water chamber 111 having an annular gap 110 therebetween. When the washing water is supplied from the washing water inlet 112 in a tangential direction to the inner surface of the cylinder of the swirling water chamber 111 and the washing water is swirled in the swirling water chamber 111, the swirling water flow 113 flowing down from the annular gap 110 causes the introduction pipe 1 to flow.
A water film 114 is formed on the entire inner surface of the substrate 06.

【0005】散水洗浄部104では、下部洗浄室102
内の散水ノズル115、及び上部洗浄室103内の複数
の散水ノズル116から洗浄水を噴射して、下部洗浄室
102と上部洗浄室103の内部が洗浄水飛沫で充満し
ている。
[0005] In the sprinkling cleaning section 104, the lower cleaning chamber 102
Cleaning water is sprayed from the water spray nozzle 115 in the inside and the plurality of water spray nozzles 116 in the upper cleaning chamber 103, and the inside of the lower cleaning chamber 102 and the upper cleaning chamber 103 is filled with the cleaning water splash.

【0006】排ガスは、矢印117で示すようにガス導
入部105を通って散水洗浄部104に流入し、洗浄水
飛沫で充満した下部散水室102及び上部洗浄室103
を通過する間に、排ガス中のSiO2 等の固定微粒子と
塩素化合物とが洗浄水に捕捉され、シラン系ガスがSi
2 と塩素化合物とに分解されて洗浄水に捕捉される。
固体微粒子と塩素化合物とが除去された処理ガスは排気
口118から大気中に放出され、固体微粒子と塩素化合
物とで汚染された洗浄水は排出管119から排出され
る。
The exhaust gas flows through the gas inlet 105 into the sprinkler / washer 104 as shown by the arrow 117, and the lower sprinkler chamber 102 and the upper wash chamber 103 filled with the washing water splash.
While passing through, fixed particles such as SiO 2 and the chlorine compound in the exhaust gas are trapped in the washing water, and the silane-based gas is
It is decomposed into O 2 and chlorine compounds and is captured in the washing water.
The processing gas from which the solid fine particles and the chlorine compound have been removed is discharged into the atmosphere from the exhaust port 118, and the washing water contaminated with the solid fine particles and the chlorine compound is discharged from the discharge pipe 119.

【0007】散水洗浄部104の前段に上記のような排
ガス導入部105を設けたことにより、水膜114に覆
われた導入管106の内面への固体微粒子の付着が防止
され、下部洗浄室102の洗浄水飛沫がガス入口管10
9まで飛来せず、ガス入口管109の近傍で洗浄水飛沫
が発生しないために、ガス入口管109への固体微粒子
の付着が防止される。
By providing the exhaust gas introduction section 105 as described above in front of the water washing section 104, solid particulates are prevented from adhering to the inner surface of the introduction pipe 106 covered by the water film 114, and the lower cleaning chamber 102 Of the washing water in the gas inlet pipe 10
Since the washing water does not come to 9 and splashing of the washing water does not occur near the gas inlet pipe 109, adhesion of the solid fine particles to the gas inlet pipe 109 is prevented.

【0008】[0008]

【発明が解決しようとする課題】しかし上記の排ガス導
入部分105では、図4に示すように、外周面が洗浄水
と接するガス入口管109の下端では、排ガス中のシラ
ン系ガスと水とのゲル状の反応生成物が析出し、これに
排ガス中のSiO2 等の固体微粒子が付着して次第に付
着物が成長する。この付着物は粘着性があるため旋回水
流113によっては容易に剥離せず、付着物内の毛細管
現象によって水分が常に補給されるために、水分が存在
しないガス入口管109の内部にも付着物が拡がってい
く。これを放置すると、付着物が、ガス入口管109内
での排ガスの流通を阻害したり、導入管109内での均
一な水膜114の形成を妨げるようになるため、やはり
ガス入口管109の付着物除去が必要である。
However, in the exhaust gas introduction portion 105, as shown in FIG. 4, at the lower end of the gas inlet pipe 109 whose outer peripheral surface is in contact with the washing water, the silane-based gas in the exhaust gas and water are mixed. A gel-like reaction product precipitates, and solid fine particles such as SiO 2 in the exhaust gas adhere to the reaction product, and the deposit gradually grows. Since the deposit is sticky, it is not easily peeled off by the swirling water stream 113, and water is constantly replenished by a capillary phenomenon in the deposit. Therefore, the deposit also exists inside the gas inlet pipe 109 where there is no moisture. Is expanding. If left unattended, the deposits will hinder the flow of exhaust gas in the gas inlet pipe 109 or hinder the formation of a uniform water film 114 in the inlet pipe 109. Debris removal is required.

【0009】また、上記の排ガス洗浄装置100では、
洗浄処理が散水洗浄のみであるため排ガスと洗浄水との
気液接触効果が充分でなく、ジクロロシランなどのシラ
ン系ガスの一部が分解されないまま残る。処理ガス中に
未反応のシラン系ガスが残ると、排気ファン等のガス移
送装置にも付着物除去の必要が生じる。
In the exhaust gas cleaning apparatus 100 described above,
Since the cleaning process is only water spray cleaning, the gas-liquid contact effect between the exhaust gas and the cleaning water is not sufficient, and a part of the silane-based gas such as dichlorosilane remains without being decomposed. If unreacted silane-based gas remains in the processing gas, it is necessary to remove deposits in a gas transfer device such as an exhaust fan.

【0010】本発明の課題は、上記のような排ガス導入
部を有する排ガス洗浄装置において、ガス入口管の付着
物除去頻度をさらに低減すると共に、洗浄効果をさらに
高めた排ガス洗浄装置を提供することである。
An object of the present invention is to provide an exhaust gas cleaning apparatus having an exhaust gas introduction section as described above, in which the frequency of removing deposits on the gas inlet pipe is further reduced and the cleaning effect is further enhanced. It is.

【0011】[0011]

【課題を解決するための手段】上記の課題は、本発明の
排ガス洗浄装置によって解決することができる。即ち、
本発明の排ガス処理装置は、請求項1に記載のとおり、
上記排ガス導入部のガス入口管を、相互に間隔を隔てて
互いに分離可能な外側管と内側管とで形成したことを特
徴としている。
The above objects can be achieved by the exhaust gas cleaning apparatus of the present invention. That is,
The exhaust gas treatment device of the present invention is as described in claim 1,
The gas inlet pipe of the exhaust gas introduction section is characterized by being formed of an outer pipe and an inner pipe which can be separated from each other at a distance from each other.

【0012】ガス入口管を外側管と内側管とからなる2
重管構造として、内側管を外周面が洗浄水と接する外側
管から分離することにより、内側管の内面で上記のよう
な付着物の成長がなくなるため、上記従来装置に比べて
ガス入口管の付着物除去頻度をさらに低減することがで
きる。外側管と内側管が分離可能であるためガス入口管
の付着物除去は容易である。
The gas inlet pipe is composed of an outer pipe and an inner pipe.
As a heavy pipe structure, by separating the inner pipe from the outer pipe whose outer peripheral surface is in contact with the washing water, the growth of the above-mentioned deposits on the inner surface of the inner pipe is eliminated. The frequency of deposit removal can be further reduced. Since the outer tube and the inner tube are separable, it is easy to remove deposits on the gas inlet tube.

【0013】また、請求項2に記載のとおり、上記外側
管と内側管の間隙に乾燥ガスを供給して、排ガスと旋回
水流を乾燥ガスで遮断することにより、粘着性の強いゲ
ル状反応生成物の析出の原因となる排ガスと水分の接触
がなくなるため、ガス入口管の外側管、内側管とも下端
での付着物が生じなくなる。乾燥ガスとしては、除湿空
気、窒素ガスなど水分を含まないガスは何でも使用で
き、水膜に接する外側管の下端のみを遮断すればよいた
め乾燥ガスは少量でよい。
According to a second aspect of the present invention, a dry gas is supplied to the gap between the outer pipe and the inner pipe, and the exhaust gas and the swirling water flow are shut off by the dry gas, thereby producing a highly sticky gel-like reaction. Since there is no contact between the exhaust gas and moisture which causes the deposition of the substance, the outer pipe and the inner pipe of the gas inlet pipe do not produce any deposit at the lower end. Any gas that does not contain moisture, such as dehumidified air and nitrogen gas, can be used as the drying gas, and only a small amount of the drying gas is required since only the lower end of the outer tube in contact with the water film needs to be cut off.

【0014】また、請求項3に記載のとおり、外側管の
外周に、縮径底部の内周縁に沿って湾曲するガイド面を
形成したことにより、環状間隙から流下する旋回水流が
縮径底部の下面に沿って導入管の内面に円滑に案内され
るため、導入管の内面に水膜を形成するための洗浄水量
が少なくてすむ。
According to a third aspect of the present invention, a guide surface curved along the inner peripheral edge of the reduced diameter bottom is formed on the outer periphery of the outer pipe, so that the swirling water flow flowing down from the annular gap is reduced. Since it is smoothly guided along the lower surface to the inner surface of the introduction pipe, the amount of washing water for forming a water film on the inner surface of the introduction pipe can be reduced.

【0015】さらに本発明の排ガス洗浄装置は、請求項
4に記載のとおり、散水洗浄部の後段に充填材処理部を
一体に形成し、散水洗浄部の処理ガスを吸引して充填材
処理部に移送するベンチュリー部を充填材処理室の上部
に設けている。
Further, in the exhaust gas cleaning apparatus according to the present invention, the filler processing section is formed integrally with the water spray cleaning section after the water spray cleaning section, and the processing gas of the water spray cleaning section is sucked to fill the filler processing section. A venturi section is provided at the upper part of the filler processing chamber.

【0016】この構成により、散水洗浄部の処理ガス中
に残った未反応のシラン系ガスを気液接触効率の高い充
填処理部で完全に分解除去することができる。また排ガ
ス洗浄装置の内部に、散水洗浄部の処理ガスを充填材処
理部に移送するベンチュリー部を設けたことにより、コ
ンパクトで洗浄効果の高い排ガス洗浄装置が得られ、付
着物除去が必要なブロワ、ファン等の排ガス移送装置が
不要となる。
According to this configuration, the unreacted silane-based gas remaining in the processing gas in the water spray cleaning section can be completely decomposed and removed in the filling processing section having high gas-liquid contact efficiency. In addition, by providing a venturi section inside the exhaust gas cleaning device that transfers the processing gas from the water spray cleaning section to the filler processing section, a compact exhaust gas cleaning apparatus with a high cleaning effect can be obtained, and a blower that requires removal of deposits is required. Therefore, an exhaust gas transfer device such as a fan is not required.

【0017】[0017]

【発明の実施の形態】以下、図1及び図2に基づいて本
発明の排ガス洗浄装置の実施形態を説明する。図1は本
発明の排ガス洗浄装置の全体図であり、図2はガス入口
部分の断面図を示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an exhaust gas cleaning apparatus according to the present invention will be described below with reference to FIGS. FIG. 1 is an overall view of an exhaust gas cleaning apparatus of the present invention, and FIG. 2 is a sectional view of a gas inlet portion.

【0018】本発明の排ガス洗浄装置10は、図1に示
すように、排ガスを導入する排ガス導入部11、下部洗
浄室12と洗浄室13とからなる散水洗浄部14、及び
散水洗浄部14の処理ガスを吸引するベンチュリー部1
5を上部に設けた充填材処理部16が一体に形成され、
装置の下部が洗浄水槽17となっている。洗浄水槽17
の洗浄水はポンプ18でヘッダー19に送られ、ヘッダ
ー19から排ガス導入部11の旋回水室20、下部洗浄
室12内の散水ノズル21、上部洗浄室13内の複数の
散水ノズル22、及びベンチュリー部15のベンチュリ
ーノズル23に供給される。排ガスと接触して汚染され
た洗浄水は洗浄水槽17に流下する。洗浄水槽17には
供給配管24を通じて新鮮な洗浄水が充填材処理部16
の下部に供給され、充填材処理部16から流下する汚染
の少ない洗浄水と共に洗浄ポンプ18で洗浄装置10の
各部に送られ、汚染された洗浄水は流出口25からオー
バーフローして別途処理される。
As shown in FIG. 1, the exhaust gas cleaning apparatus 10 of the present invention includes an exhaust gas introduction unit 11 for introducing exhaust gas, a water spray cleaning unit 14 including a lower cleaning chamber 12 and a cleaning chamber 13, and a water spray cleaning unit 14. Venturi unit 1 for sucking processing gas
5 is formed integrally with the filler processing section 16 provided at the top,
The lower part of the device is a washing water tank 17. Cleaning water tank 17
Of cleaning water is sent to the header 19 by the pump 18, and from the header 19, the swirling water chamber 20 of the exhaust gas introduction unit 11, the water spray nozzle 21 in the lower cleaning chamber 12, the plurality of water nozzles 22 in the upper cleaning chamber 13, and the venturi It is supplied to the venturi nozzle 23 of the section 15. The cleaning water contaminated by contact with the exhaust gas flows down to the cleaning water tank 17. Fresh washing water is supplied into the washing water tank 17 through the supply pipe 24 to the filler processing section 16.
Is supplied to the lower part of the cleaning device 10 by the cleaning pump 18 together with the less-contaminated cleaning water flowing down from the filler processing section 16, and the contaminated cleaning water overflows from the outlet 25 and is separately processed. .

【0019】上記の排ガス導入部11は、下端が下部洗
浄室12内に開口する導入管26の上端に旋回水室20
を設け、環状間隙27から流下する旋回水流28により
導入管26の内面に水膜29を形成する点では、図3及
び図4で述べた従来の排ガス洗浄装置100のガス導入
部105とほぼ同一構成であるが、ガス入口管30を外
側管31と内側管32との2重管構造として、外側管3
1に乾燥ガス供給路33が接続されている。
The exhaust gas introduction section 11 is provided with a swirling water chamber 20 at the upper end of an introduction pipe 26 whose lower end opens into the lower washing chamber 12.
In that a water film 29 is formed on the inner surface of the introduction pipe 26 by the swirling water flow 28 flowing down from the annular gap 27, which is almost the same as the gas introduction section 105 of the conventional exhaust gas cleaning apparatus 100 described with reference to FIGS. Although the gas inlet pipe 30 has a double pipe structure of an outer pipe 31 and an inner pipe 32,
1 is connected to a dry gas supply path 33.

【0020】本発明の排ガス洗浄装置10の排ガス導入
部11では、図2に示すように、導入管26の上部に固
定された縮径底部34を有する周壁35と、旋回水室2
0の上蓋36に上端部が固定された外側管31とで円筒
状の旋回水室20が構成され、外側管31と縮径底部3
4との間で環状間隙27を形成している。洗浄水は周壁
35内部の供給路37を通じて旋回水室20内の内面に
対して接線方向に供給される。内側管32は保持部材3
8を介して外側管31の上端で保持されており、内側管
32の上端部が接続部材39を介して排ガス配管40に
接続され、内側管32の下端部と外側管31との間に間
隙41が形成されている。この間隙41には上蓋36内
部の供給路33を通じて乾燥ガスが供給される。また環
状間隙27における外側管31の外周には、旋回水室の
縮径底部34の内周縁に沿って湾曲したガイド面42が
形成されている。
In the exhaust gas introduction section 11 of the exhaust gas cleaning apparatus 10 of the present invention, as shown in FIG. 2, a peripheral wall 35 having a reduced diameter bottom portion 34 fixed to an upper portion of an introduction pipe 26, and a swirling water chamber 2
The upper tube 36 and the outer tube 31 whose upper end is fixed form the cylindrical swirling water chamber 20, and the outer tube 31 and the reduced diameter bottom 3
4, an annular gap 27 is formed. The washing water is supplied tangentially to the inner surface of the swirling water chamber 20 through the supply path 37 inside the peripheral wall 35. Inner tube 32 is holding member 3
8, the upper end of the inner pipe 32 is connected to the exhaust pipe 40 via the connecting member 39, and a gap is provided between the lower end of the inner pipe 32 and the outer pipe 31. 41 are formed. Dry gas is supplied to the gap 41 through the supply path 33 inside the upper lid 36. A guide surface 42 curved along the inner peripheral edge of the reduced diameter bottom portion 34 of the swirling water chamber is formed on the outer periphery of the outer tube 31 in the annular gap 27.

【0021】このように、ガス入口管30を2重管構造
として、内側管32を、洗浄水に接する外側管31から
分離することにより、内側管32の内面に固体微粒子が
付着しても水分の補給がないために付着物が成長しな
い。従って、前記従来装置100の排ガス導入部105
に比べてガス入口管30の付着物の除去頻度が低減され
る。外側管31と内側管32とが分離可能であるため、
付着物の除去が容易である。さらに、間隙41に乾燥ガ
スを供給して、外側管31の下端を排ガスから遮断する
ことにより、外側管31の下端への反応生成物の析出と
固体微粒子の付着が阻止され、ガス入口管30の付着物
除去が殆ど不要となる。間隙41に供給する乾燥ガス
は、窒素ガス、除湿空気など水分を含まないガスであれ
ば何でもよく、洗浄水と接する外側管31の下端のみを
遮蔽すればよいため、乾燥ガスは少量ですむ。また外側
管32の外面に形成したガイド面42により、環状間隙
27から流下する旋回水流28が、縮径底部34の下面
に沿って導入管26の内面に円滑に案内されるため、前
記従来装置の排ガス導入部105に比べて、導入管26
の内面に水膜29を形成するための洗浄水量が少なくて
すむ。
As described above, the gas inlet pipe 30 has a double pipe structure, and the inner pipe 32 is separated from the outer pipe 31 which is in contact with the washing water. Deposits do not grow due to lack of replenishment. Therefore, the exhaust gas introduction unit 105 of the conventional apparatus 100
The frequency of removing the deposits on the gas inlet tube 30 is reduced as compared with the case of FIG. Since the outer tube 31 and the inner tube 32 can be separated,
It is easy to remove deposits. Further, by supplying a dry gas to the gap 41 and blocking the lower end of the outer tube 31 from the exhaust gas, the deposition of the reaction product and the attachment of solid fine particles to the lower end of the outer tube 31 are prevented, and the gas inlet tube 30 Almost no need to remove extraneous matter. The dry gas supplied to the gap 41 may be any gas that does not contain moisture, such as nitrogen gas and dehumidified air, and only the lower end of the outer tube 31 that is in contact with the washing water needs to be shielded. The guide surface 42 formed on the outer surface of the outer tube 32 guides the swirling water flow 28 flowing down from the annular gap 27 smoothly to the inner surface of the inlet tube 26 along the lower surface of the reduced diameter bottom portion 34. Of the introduction pipe 26
The amount of washing water for forming the water film 29 on the inner surface of the substrate is small.

【0022】さらに、本発明の排ガス洗浄装置10で
は、散水洗浄部14の処理ガスが、ベンチュリーノズル
23からベンチュリー部15に噴射される洗浄水飛沫の
流れに吸引されて充填材洗浄部16に送り込まれる。充
填材洗浄部16内での良好な気液接触により、未反応の
シラン系ガスが全てSiO2 と塩素化合物とに分解され
て洗浄水中に取り込まれる。充填材処理部16で洗浄さ
れた処理ガスは排気管43を通じて外部に放出される。
Further, in the exhaust gas cleaning apparatus 10 of the present invention, the processing gas of the water spray cleaning section 14 is sucked by the flow of the cleaning water sprayed from the venturi nozzle 23 to the venturi section 15 and sent to the filler cleaning section 16. It is. Due to good gas-liquid contact in the filler cleaning section 16, all unreacted silane-based gases are decomposed into SiO 2 and chlorine compounds and taken into the cleaning water. The processing gas washed in the filler processing unit 16 is discharged outside through the exhaust pipe 43.

【0023】以上では、付着性物質を含む排ガスとし
て、シラン系ガスを含む半導体製造工程の排ガスについ
て述べたが、本発明の排ガス洗浄装置は、ハロゲン化リ
ン、ヒ素、ホウ素、シボランその他の付着性物質を含む
排ガス洗浄処理にも適用できる。
In the above, the exhaust gas of the semiconductor manufacturing process containing a silane-based gas has been described as the exhaust gas containing the adhering substance. However, the exhaust gas cleaning apparatus of the present invention uses the phosphorus halide, arsenic, boron, siborane and other adsorbents. It can also be applied to exhaust gas cleaning processing containing substances.

【0024】[0024]

【発明の効果】排ガス導入部のガス入口管を間隔を隔て
た2重管構造として、内側管を、洗浄水に接する外側管
から分離することにより、ガス入口管の付着物除去頻度
が減少し、外側間と内側間の間隙に乾燥ガスを供給し
て、外側管の下端を排ガスから遮断することにより、ガ
ス入口管の付着物除去が殆ど不要となる。
According to the present invention, the gas inlet pipe of the exhaust gas introduction section has a double-pipe structure with a space therebetween, and the inner pipe is separated from the outer pipe in contact with the washing water. By supplying the drying gas to the gap between the outside and the inside to block the lower end of the outer tube from the exhaust gas, it is almost unnecessary to remove the deposit on the gas inlet tube.

【0025】前段に排ガス導入部を有する散水洗浄部の
後段に気液接触効果の高い充填材処理部を一体に形成
し、洗浄装置の内部に、散水洗浄部の処理ガスを吸引し
て充填材処理部に移送するベンチュリー部を設けたこと
により、コンパクトで洗浄効果の高い排ガス洗浄装置が
得られ、付着物除去の必要のあるガス移送装置が設置不
要となる。
A filler treatment section having a high gas-liquid contact effect is integrally formed in a stage subsequent to the sprinkling washing section having an exhaust gas introduction section in the preceding stage, and the processing gas in the sprinkling washing section is sucked into the inside of the washing device to fill the filler. By providing the venturi section for transferring to the processing section, a compact exhaust gas cleaning apparatus having a high cleaning effect can be obtained, and the installation of a gas transfer apparatus which needs to remove deposits becomes unnecessary.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の排ガス洗浄装置の全体図である。FIG. 1 is an overall view of an exhaust gas cleaning apparatus of the present invention.

【図2】 本発明の排ガス洗浄装置の排ガス導入部の断
面図である。
FIG. 2 is a sectional view of an exhaust gas introduction section of the exhaust gas cleaning device of the present invention.

【図3】 従来の排ガス洗浄装置の全体図である。FIG. 3 is an overall view of a conventional exhaust gas cleaning device.

【図4】 従来の排ガス洗浄装置の排ガス導入部の断面
図である。
FIG. 4 is a cross-sectional view of an exhaust gas introduction section of a conventional exhaust gas cleaning device.

【符号の説明】[Explanation of symbols]

10・・・排ガス洗浄装置 11・・・排ガス導入部 14・・・散水洗浄部 15・・・ベンチュリー部 16・・・充填材処理部 20・・・旋回水室 26・・・導入管 28・・・旋回水流 29・・・水膜 30・・・ガス入口管 33・・・乾燥ガス供給路 DESCRIPTION OF SYMBOLS 10 ... Exhaust gas cleaning apparatus 11 ... Exhaust gas introduction part 14 ... Sprinkle cleaning part 15 ... Venturi part 16 ... Filler processing part 20 ... Swirling water chamber 26 ... Introductory pipe 28. ..Swirl water flow 29 ・ ・ ・ Water film 30 ・ ・ ・ Gas inlet pipe 33 ・ ・ ・ Dry gas supply path

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) B01D 50/00 501 B01D 50/00 501L Fターム(参考) 4D031 AB10 AB29 AC02 BA01 BA04 BA06 BA10 DA04 EA01 4D032 AB06 AB09 AB10 AC05 AC07 AC08 AC21 AC39 AD01 AD04 AD06 AD09 BA03 BB07 BB17Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat II (reference) B01D 50/00 501 B01D 50/00 501L F-term (reference) 4D031 AB10 AB29 AC02 BA01 BA04 BA06 BA10 DA04 EA01 4D032 AB06 AB09 AB10 AC05 AC07 AC08 AC21 AC39 AD01 AD04 AD06 AD09 BA03 BB07 BB17

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 付着性物質を含む排ガスの散水洗浄装置
であって、下端が散水洗浄部に連通する導入管の上端に
旋回水室を形成し、その中心のガス入口管と旋回水室の
縮径底部との間の環状間隙から流下する旋回水流により
導入管の内面に水膜を形成する排ガス導入部を、散水洗
浄部の前段に設けた排ガス洗浄装置において、上記排ガ
ス導入部のガス入口管を、相互に間隔を隔てて互いに分
離可能な外側管と内側管とで形成したことを特徴とする
排ガス洗浄装置。
1. A water sprinkling and washing apparatus for exhaust gas containing an adhering substance, wherein a lower end forms a swirling water chamber at an upper end of an introduction pipe communicating with a sprinkling cleaning section, and a central gas inlet pipe and a center of the swirling water chamber are formed. An exhaust gas introduction unit that forms a water film on the inner surface of the introduction pipe by a swirling water flow flowing down from the annular gap between the reduced diameter bottom portion and the exhaust gas cleaning device provided at the preceding stage of the water spray cleaning unit. An exhaust gas cleaning apparatus characterized in that the pipe is formed of an outer pipe and an inner pipe which can be separated from each other at a distance from each other.
【請求項2】 上記外側管と内側管の間隙に乾燥ガスを
供給する請求項1記載の排ガス洗浄装置。
2. The exhaust gas cleaning apparatus according to claim 1, wherein a dry gas is supplied to a gap between the outer pipe and the inner pipe.
【請求項3】 上記外側管の外周に、縮径底部の内周縁
に沿って湾曲するガイド面を形成した請求項1記載の排
ガス洗浄装置。
3. The exhaust gas cleaning apparatus according to claim 1, wherein a guide surface curved along an inner peripheral edge of the reduced diameter bottom portion is formed on an outer periphery of the outer pipe.
【請求項4】 上記散水洗浄部の後段に充填材処理部を
一体に形成し、散水洗浄部の処理ガスを吸引して充填材
処理部に移送するベンチュリー部を充填材処理部の上部
に設けた請求項1記載の排ガス洗浄装置。
4. A filler processing section is integrally formed at a stage subsequent to the sprinkling washing section, and a venturi section for sucking a processing gas of the sprinkling cleaning section and transferring the processing gas to the filler processing section is provided above the filler processing section. The exhaust gas cleaning device according to claim 1.
JP07968999A 1999-03-24 1999-03-24 Exhaust gas cleaning equipment Expired - Lifetime JP3476126B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP07968999A JP3476126B2 (en) 1999-03-24 1999-03-24 Exhaust gas cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07968999A JP3476126B2 (en) 1999-03-24 1999-03-24 Exhaust gas cleaning equipment

Publications (2)

Publication Number Publication Date
JP2000271421A true JP2000271421A (en) 2000-10-03
JP3476126B2 JP3476126B2 (en) 2003-12-10

Family

ID=13697183

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Application Number Title Priority Date Filing Date
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Country Link
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