TW200829325A - Apparatus and method for processing gas - Google Patents
Apparatus and method for processing gas Download PDFInfo
- Publication number
- TW200829325A TW200829325A TW096112509A TW96112509A TW200829325A TW 200829325 A TW200829325 A TW 200829325A TW 096112509 A TW096112509 A TW 096112509A TW 96112509 A TW96112509 A TW 96112509A TW 200829325 A TW200829325 A TW 200829325A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- temperature
- reactor
- target gas
- supplied
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/206—Organic halogen compounds
- B01D2257/2066—Fluorine
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
- B01D2259/818—Employing electrical discharges or the generation of a plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma Technology (AREA)
- Treating Waste Gases (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
200829325 (1) 九、發明說明 【發明所屬之技術領域】 本發明是關於將包含對人體有害的氣體、地球溫暖化 氣體、臭氧層破壊氣體之氣體、特別是由半導體或液晶等 的製造程序所排出的氣體進行分解處理之裝置及其方法。 【先前技術】 在半導體或液晶等的製造程序，使用各種的氟化合物 氣體作爲清淨氣體或鈾刻氣體等。這種的氟化合物被稱爲 「PFCs等」，代表性者可舉出，CF4、C2F6、C3F8、C4F8 、CsFg等的全氟化碳、CHF3等的氫氟烴及SF6或NF3等的 無機含氟化合物等。 又’半導體或液晶等的製造程序所使用的各種的 PFCs等是與作爲載體氣體或沖洗氣體等所使用之％或Ar 或作爲添加氣體所使用之〇2、H2或NH3、CH4等，一同作 爲排氣體被排出。 在此，前述排氣體之PFCs等所佔的比例，比起％或 Ar等的其他氣體，僅有稍許，但，此PFCs等之地球溫暖 化係數（GWP)，比起C〇2，有數千〜數萬倍之大，大氣壽 命比起C〇2，也有數千〜數萬年之長，因此即使在少量排 出至大氣中之情況，其影響甚大甚遠。且，以C F 4或C 2 F 6 爲代表之全氟化碳，由於C-F結合穩定（結合能量爲 13 0kcal/mol之大），故，並不容易分解之情事爲眾所皆 知。因此，由排氣體中除去使用完畢的PFCs等之各種的 (2) (2)200829325 技術開發被進行。 作爲藉由將包含這種難分解性的PFCs等之氣體（以下 ，僅稱爲「處理對象氣體」）。進行熱分解來除害之技術 ，被提案有如圖9所示，對電漿噴燈1的電極1 a、1 b間輸 送供給作動氣體G，並且在電極la、lb間施加放電電壓， 使大氣壓電漿P噴出至反應器2內，朝此大氣壓電漿P供 給處理對象氣體F，將處理對象氣體F進行熱分解之電漿 分解機3 (例如，參照專利文獻1 )。 在使用此大氣壓電漿P之電漿分解機3，藉由使用氮 氣作爲作動氣體G，大氣壓電漿P的溫度會成爲大約數千 〜數萬°C前後（在此情況，大氣壓電漿P的環境溫度也成 爲數千°C)之超高溫，可將處理對象氣體尤其是全氟化碳 等的難分解性的處理對象氣體F瞬間予以熱分解而加以除 害。 包含由電漿分解機3所排出的熱分解後的處理對象氣 體F與作動氣體G之高溫排氣體R是藉由在緊連接於電 漿分解機3之濕式洗滌器（未圖示）接受水的噴射’除去含 於排氣體R中之粉塵，並且，進行利用該水的蒸發潛熱等 之排氣體R的冷卻。 [專利文獻1]日本特開2000-334294號公報（第2圖） 【發明內容】 [發明所欲解決之課題] 但，在上述的這種以往之技術’因作爲作動氣體所使 (3) (3)200829325 用之氮與排氣體中的氧氣結合，會產生被稱爲熱NOx之 氮氧化物（NOx)。特別是當來自於電漿分解機3之排氣體R 在高溫狀態下直接通過濕式洗滌器時，噴射至排氣體&之 水會因排氣體R所具有的熱而分離成氫與氧，進而該氧氣 會與作動氣體G之氮產生反應，產生氮氧化物。當然， 高溫作動氣體G與被供給至大氣壓電漿P前就含於處理 對象氣體F中之氧氣（含於水之氧也相同）接觸的話’均會 產生氮氧化物，但，如上述般，會有因通過濕式洗滌器， 造成排氣體R中的氧氣濃度急速上升，氮氧化物之產生量 也變得極多之問題。 因此，在以往的技術，在後段製程，進一步必須將氮 氧化物由排氣體R中除去，效率非常差。 本發明是有鑑於這種以往技術的問題點而開發完成之 發明。因此，本發明之課題是在於提供，使用以氮氣作爲 作動氣體之電漿噴燈，不會產生氮氧化物之副產物，並且 比起以往例，可更有效率地將處理對象氣體進行熱分解之 氣體處理裝置。 [用以解決課題之手段] 請求項1所記載的發明是「一種氣體處理裝置10，其 特徵爲：具備：具有圍繞大氣壓電漿P及朝大氣壓電漿P 所供給的處理對象氣體F並在其內部進行處理對象氣體F 的熱分解之反應器22，將氮氣作爲作動氣體G來使用之 電漿分解機12;及在氧或水分未混入於包含由電漿分解機 (4) (4)200829325 1 2所排出的熱分解後的處理對象氣體F與作動氣體G之 排氣體R的狀態下’將排氣體汉冷卻至至少不會產生氮 氧化物之溫度爲止的冷卻部1 4」° 在此發明，包含有害氣體或可燃氣體、地球溫暖化氣 體、臭氧層破壊氣體等之處理對象氣體？是在電漿分解機 12，藉由作動氣體G(氮氣）的高溫電漿流所熱分解。又’ 由包含電漿分解機12所排出的熱分解後的處理對象氣體F 與作動氣體G之高溫排氣體R是在由電漿分解機12所排 出後，不會與氧或水分接觸，而藉由冷卻部14冷卻至不會 產生氮氧化物之溫度爲止。（再者’前述「氧或水分」不 包含，在處理對象氣體F被供給至電漿分解機12前’含於 處理對象氣體F中的氧或水分、或在處理對象氣體F賦予 至大氣壓電漿P爲止，加於處理對象氣體F之氧或水分） 。因此，可顯著地減低溫度高的氮與氧接觸之機會’可將 氮氧化物之副產物產生予以極小化。 請求項2所記載的發明是如請求項1所記載的氣體處理 裝置10，其中，「冷卻部14是具備熱交換器72」。 再者，在本說明書，「熱交換器」是指低溫側媒體與 高溫側媒體不會直接接觸的形式之熱交換器。 請求項3所記載的發明是如請求項1或2所記載的氣體 處理裝置10，其中，「反應器22是具有以外管4 6及內管48 所構成的雙重管構造，大氣壓電漿P是形成於內管48的內 側，在外管46，設有將處理對象氣體F導入至外管4 6與內 管48之間的空間S之處理對象氣體導入口 50，在內管48， 200829325 (5) 設有將流通過空間S後的處理對象氣體F朝大氣壓電漿P 吹入之處理對象氣體輸送供給口 52」。 在此發明，反應器22具有雙重管結構，並且處理對象 氣體F是在流通過外管46與內管48之間的空間S後’輸送 供給至大氣壓電漿P。因此，反應器2 2內部的熱經由內管 4 8賦予至流通空間S之處理對象氣體F，能將輸送供給至 大氣壓電漿P之處理對象氣體F預熱。且，高溫排氣體R ® 與較排氣體R低的溫度之處理對象氣體F之間進行熱交 換，可同時地執行，輸送供給至大氣壓電漿p之處理對象 氣體F的預熱與排氣體R的冷卻。 請求項4所記載的發明是如請求項3所記載的氣體處理 裝置10，其中，「進一步具備：朝空間S或處理對象氣體 輸送供給口 52，至少供給水分、氫或氨的其中任一種之噴 嘴60」。 在此發明，對外管46與內管48之間的空間S或處理對 ^ 象氣體輸送供給口 52，供給分解助劑A之水分、氫或氨 的其中任一種。因此，在供給水分之情況，因在處理對象 ^ 氣體F與高溫作動氣體G混合前，能將水分與處理對象 氣體F混合，所以，可在處理對象氣體F與作動氣體0 混合前，開始進行利用水分之處理對象氣體F的分解反應 ，既可抑制氮氧化物的副產物產生，亦可提高處理對象氣 體F的分解效率。 又，在對預熱有作爲分解助劑A之氫或氨的處理對 象氣體F進行供給之情況’不會形成將成爲產生氮氧化物 -9- (6) 200829325 的原因之氧氣導入至反應器，不必擔心會助長氮氧化物之 副產物產生，可提高處理對象氣體F的分解效率。 請求項5所記載的發明是如請求項1至4中任一個所記 載的氣體處理裝置10，其中，「在反應器22，設有用來檢 測反應器22內的溫度之溫度檢測手段5 8，在電漿分解機1 2 ，設有：因應溫度檢測手段58所檢測到的溫度檢測値，控 制輸送供給至大氣壓電漿P之作動氣體G的量之質量流 ®量控制手段3 8」。 大氣壓電漿P是藉由變更作動氣體G的輸送供給量 ，可調節其輸出（具體而言爲噴出量或溫度）。因此，在本 發明，因設有用來檢測反應器22內的溫度之溫度檢測手段 5 8，並且設有因應溫度檢測手段5 8之溫度檢測値，增減輸 送供給至大氣壓電漿P之作動氣體G的量之質量流量控 制手段3 8，所以，能夠控制大氣壓電漿P的輸出，使得反 0 應器2 2內的溫度成爲預定値。即，能夠當反應器2 2內的溫 度變得較預定値高時，則降低作動氣體G的輸送供給量 ，使大氣壓電漿P的輸出降低，相反地，當反應器22內的 - 溫度變得較預定値低時，則能增加作動氣體G的輸送供 . 給量，使大氣壓電漿P的輸出。200829325 (1) IX. Description of the Invention [Technical Fields of the Invention] The present invention relates to a process for producing a gas containing a gas harmful to the human body, a global warming gas, an ozone layer breaking gas, and particularly a semiconductor or liquid crystal manufacturing process. The apparatus for decomposing the gas and the method thereof. [Prior Art] Various fluorine compound gases are used as a clean gas or a uranium engraving gas in a manufacturing process such as a semiconductor or a liquid crystal. Such a fluorine compound is referred to as "PFCs or the like", and examples thereof include perfluorocarbons such as CF4, C2F6, C3F8, C4F8, and CsFg, hydrofluorocarbons such as CHF3, and inorganic salts such as SF6 or NF3. Fluorine compounds, etc. In addition, various PFCs and the like used in a manufacturing process such as a semiconductor or a liquid crystal are used together with % or Ar used as a carrier gas or a flushing gas, or 〇2, H2, NH3, CH4, etc., which are used as an additive gas. The exhaust gas is discharged. Here, the ratio of the PFCs and the like of the exhaust gas is slightly smaller than that of other gases such as % or Ar. However, the global warming coefficient (GWP) of the PFCs or the like is higher than that of C〇2. It is thousands to tens of thousands of times, and its atmospheric life is thousands to tens of thousands of years longer than C〇2. Therefore, even in a small amount discharged into the atmosphere, its impact is far-reaching. Further, since the perfluorocarbon represented by C F 4 or C 2 F 6 is stable in C-F bonding (the binding energy is as large as 130 kcal/mol), it is not known that it is not easily decomposed. Therefore, various types of PFCs and the like that have been used are removed from the exhaust gas. (2) (2) 200829325 Technical development is carried out. A gas containing such a poorly decomposable PFCs or the like (hereinafter, simply referred to as a "treatment target gas"). The technique of performing thermal decomposition to remove the damage is proposed as shown in Fig. 9. The supply of the driving gas G to the electrodes 1a and 1b of the plasma torch 1 is performed, and a discharge voltage is applied between the electrodes 1a and 1b to make the piezoelectric electrode The slurry P is discharged into the reactor 2, and the processing target gas F is supplied to the atmospheric piezoelectric slurry P to thermally decompose the processing target gas F (for example, see Patent Document 1). In the plasma decomposition machine 3 using the atmospheric piezoelectric slurry P, by using nitrogen as the operating gas G, the temperature of the atmospheric piezoelectric slurry P becomes about several thousands to several tens of thousands of degrees C (in this case, the atmospheric piezoelectric slurry P) The ambient temperature is also an ultra-high temperature of several thousand ° C), and the gas F to be treated which is difficult to be decomposed, such as a perfluorocarbon, can be thermally decomposed and detoxified instantaneously. The high-temperature exhaust body R including the heat-decomposed process target gas F and the actuating gas G discharged from the plasma-decomposer 3 is received by a wet scrubber (not shown) that is closely connected to the plasma-decomposer 3 The injection of water 'removes the dust contained in the exhaust body R, and performs cooling of the exhaust body R by the latent heat of vaporization of the water. [Patent Document 1] JP-A-2000-334294 (FIG. 2) [Disclosure] [Problems to be Solved by the Invention] However, the above-described conventional technique is used as an operating gas (3) (3) 200829325 The combination of nitrogen and oxygen in the exhaust gas produces nitrogen oxides (NOx) called thermal NOx. In particular, when the exhaust body R from the plasma decomposition machine 3 passes directly through the wet scrubber at a high temperature, the water sprayed to the exhaust body & is separated into hydrogen and oxygen by the heat of the exhaust gas R, Further, the oxygen reacts with the nitrogen of the operating gas G to generate nitrogen oxides. Of course, when the high-temperature operating gas G is in contact with the oxygen contained in the gas F to be treated (the oxygen contained in the water is also supplied) before being supplied to the atmospheric piezoelectric slurry P, nitrogen oxides are generated, but, as described above, There is a problem that the concentration of oxygen in the exhaust gas R rapidly rises due to passing through the wet scrubber, and the amount of nitrogen oxides is also extremely increased. Therefore, in the prior art, in the subsequent stage process, it is necessary to further remove the nitrogen oxides from the exhaust gas R, which is extremely inefficient. The present invention has been developed in view of the problems of the prior art. Accordingly, an object of the present invention is to provide a plasma torch which uses nitrogen gas as an actuating gas, which does not generate by-products of nitrogen oxides, and which can thermally decompose the gas to be treated more efficiently than in the prior art. Gas treatment unit. [Means for Solving the Problem] The invention according to the first aspect of the invention is the gas processing device 10, comprising: a treatment target gas F supplied to the atmospheric piezoelectric slurry P and the atmospheric piezoelectric slurry P; The reactor 22 for thermally decomposing the target gas F is internally used, and the plasma decomposer 12 is used as the operating gas G; and the oxygen or moisture is not mixed in by the plasma decomposition machine (4) (4) 200829325 1 2 in the state of the exhaust gas R after the thermal decomposition and the exhaust gas R of the actuating gas G, the cooling unit is cooled to at least the temperature at which the nitrogen oxides are not generated. The invention includes a gas to be treated such as a harmful gas, a combustible gas, a global warming gas, and an ozone depleting gas. It is in the plasma decomposition machine 12, which is thermally decomposed by the high temperature plasma flow of the operating gas G (nitrogen). Further, the high-temperature exhaust body R of the heat-decomposed process target gas F and the actuating gas G discharged from the plasma-decomposer 12 is not exposed to oxygen or moisture after being discharged by the plasma-decomposer 12. The cooling unit 14 is cooled until the temperature of the nitrogen oxides is not generated. (In addition, the above-mentioned "oxygen or water" does not include oxygen or moisture contained in the treatment target gas F before the treatment target gas F is supplied to the plasma decomposition machine 12, or is applied to the atmospheric piezoelectric element in the treatment target gas F. The slurry P is added to the oxygen or moisture of the treatment target gas F). Therefore, the opportunity for the contact of nitrogen with oxygen at a high temperature can be remarkably reduced, and the by-product generation of nitrogen oxides can be minimized. The invention of claim 2 is the gas processing apparatus 10 according to claim 1, wherein the "cooling unit 14 is provided with a heat exchanger 72". In the present specification, the "heat exchanger" means a heat exchanger in a form in which the low temperature side medium and the high temperature side medium are not in direct contact with each other. The invention of claim 3 is the gas processing apparatus 10 according to claim 1 or 2, wherein the reactor 22 has a double tube structure including an outer tube 46 and an inner tube 48, and the atmospheric piezoelectric slurry P is The inside of the inner tube 48 is provided, and the outer tube 46 is provided with a processing target gas introduction port 50 for introducing the processing target gas F into the space S between the outer tube 46 and the inner tube 48, and the inner tube 48, 200829325 (5) The processing target gas delivery supply port 52" that blows the processing target gas F that has flowed through the space S into the atmospheric piezoelectric slurry P is provided. In the invention, the reactor 22 has a double tube structure, and the treatment target gas F is supplied to the atmospheric piezoelectric slurry P after flowing through the space S between the outer tube 46 and the inner tube 48. Therefore, the heat inside the reactor 2 2 is supplied to the processing target gas F in the flow space S via the inner tube 48, and the processing target gas F supplied to the atmospheric piezoelectric slurry P can be preheated. Further, heat exchange between the high-temperature exhaust gas R ® and the processing target gas F at a temperature lower than that of the exhaust gas R can be simultaneously performed, and the preheating and exhaust gas R of the processing target gas F supplied to the atmospheric piezoelectric slurry p can be transported. Cooling. The invention according to claim 3, wherein the gas processing apparatus 10 according to the third aspect of the present invention further includes: supplying at least one of water, hydrogen, or ammonia to the space S or the processing target gas delivery supply port 52. Nozzle 60". In the invention, the space S between the outer tube 46 and the inner tube 48 or the treatment gas supply supply port 52 is supplied with any one of moisture, hydrogen or ammonia of the decomposition aid A. Therefore, when water is supplied, the water can be mixed with the processing target gas F before the processing target gas F is mixed with the high-temperature operating gas G. Therefore, the processing target gas F can be started before mixing with the operating gas 0. The decomposition reaction of the gas F to be treated by the moisture can suppress the generation of by-products of nitrogen oxides and improve the decomposition efficiency of the gas F to be treated. In addition, when the treatment target gas F having hydrogen or ammonia as the decomposition aid A is preheated, the oxygen which is the cause of the generation of the nitrogen oxide-9-(6) 200829325 is not formed and introduced into the reactor. There is no fear that the by-product of nitrogen oxides will be promoted, and the decomposition efficiency of the gas F to be treated can be improved. The gas processing apparatus 10 according to any one of claims 1 to 4, wherein "the reactor 22 is provided with a temperature detecting means 5 8 for detecting the temperature in the reactor 22. The plasma decomposition machine 1 2 is provided with a mass flow rate control means 38 for controlling the amount of the operating gas G supplied to the atmospheric piezoelectric slurry P in response to the temperature detection enthalpy detected by the temperature detecting means 58. The atmospheric piezoelectric slurry P can be adjusted in its output (specifically, the discharge amount or temperature) by changing the supply amount of the operating gas G. Therefore, in the present invention, the temperature detecting means 5 8 for detecting the temperature in the reactor 22 is provided, and the temperature detecting means for the temperature detecting means 58 is provided to increase or decrease the driving gas supplied to the atmospheric piezoelectric slurry P. The mass flow control means 3 of the amount of G can control the output of the atmospheric piezoelectric slurry P so that the temperature in the counter reactor 2 2 becomes a predetermined enthalpy. That is, when the temperature in the reactor 2 2 becomes higher than the predetermined enthalpy, the supply amount of the actuating gas G is lowered, and the output of the atmospheric piezoelectric slurry P is lowered. Conversely, when the temperature in the reactor 22 is changed When the temperature is lower than the predetermined value, the supply amount of the operating gas G can be increased to increase the output of the atmospheric piezoelectric slurry P.
因此，例如設定成，反應器22內的溫度成爲可容易將 難分解性的全氟化碳予以熱分解之預定溫度（大約1 3 00 °C 以上的溫度）時，則因應以溫度檢測手段58所檢測到的反 應器22內的溫度，質量流量控制手段38作動，增減輸送供 給至大氣壓電漿P之作動氣體G的量，調節大氣壓電漿P -10- (7) (7)200829325 的輸出。其結果’反應器2 2內的溫度經常被保持於設定溫 度，能在反應器22內確實地除去處理對象氣體F。又，由 於反應器22是不會固定地曝露於，大氣壓電漿p的輸出極 大化之際所產生的超高溫熱中，故，可極力地延遲因超高 溫熱造成這些構件之損傷。 [發明之効果] 若根據請求項1之發明的話，因包含作動氣體與熱分 解後的處理對象氣體之高溫排氣體是在由電漿分解機排出 後，在冷卻部，於不會與氧或水分接觸之狀態下，冷卻至 不會產生氮氧化物之溫度，所以，可顯著地降低溫度高的 氮與氧接觸之機會，可將將氮氧化物的副產物產生予以極 小化。 又，根據請求項3之發明的話，因反應器是以雙重管 構成，在排氣體R與處理對象氣體F之間進行熱交換， 所以，可將輸送供給至大氣壓電漿之處理對象氣體充分地 預熱，同時可將熱分解後的高溫排氣體加以冷卻。因此， 可減低大氣壓電漿的輸出，並且可將大流量的處理對象氣 體確實且有效率地予以熱分解並除去，進一步可減低熱分 解後的排氣體之冷卻部的冷卻負擔。 且，若根據請求項4之發明的話，既可抑制氮氧化物 產生，亦可促進處理對象氣體分解。 又，若根據請求項5之發明的話，能將處理對象氣體 確實地分解並除去，並且可長期間穩定地進行連續運轉。 -11 - (8) 200829325 如以上所述，若根據本發明的話，能夠提供即可極力 地抑制氮氧化物的副產物產生’又可進行處理對象氣體之 分解的氣體處理裝置。 【實施方式】 以下，依據圖示實施例’說明本發明。圖1是顯示本 實施例之氣體處理裝置10的槪要之構成圖。如此圖所示， 本實施例的氣體處理裝置1 0是大致以電漿分解機1 2與冷卻 部14所構成。 電漿分解機12爲使用高溫大氣壓電漿，來將處理對象 氣體F予以熱分解之裝置’以電漿噴燈16、電源單元18、 作動氣體輸送供給單元20、反應器22及分解助劑輸送供給 單元23等所構成。 電漿噴燈16是用來產生高溫大氣壓電漿P者，具有由 黄銅等的金屬材料所構成並上下兩面開口之短筒狀噴燈本 體16a。在此噴燈本體16a的前端連設有陽極16b，在其內 部，裝設有棒狀的陰極1 6 c。 陽極1 6b是以銅或鎢等的具有高導電性之高融點金屬 所構成，於內部凹設有電漿產生室16d之圓筒狀噴嘴。在 此陽極16b的下面中心部，貫設有將在電漿產生室16d內 所產生的大氣壓電漿P噴出之電漿噴出孔16e，在陽極16b 側面的上部，設有作動氣體輸送供給口 1 6f。 陰極16c爲以由銅等的具有高導電性之高融點金屬所 形成的本體部、與由混入有钍或鑭之鎢所形成並其外徑朝 -12- 200829325 (9) 前端呈紡錘體狀縮徑之前端部所構成的棒狀構件。此陰極 16c的前端部分是配設於，凹設在陽極16b內之電漿產生 室 1 6 d 〇 再者，在陽極16b與陰極16c之間，介裝有四氟乙烯 樹脂或陶瓷等的絶緣材料（未圖示），使得不會經由噴燈本 體16a，在這些陽極與陰極間產生通電（短路）。又，在陽 極1 6 b及陰極1 6 c的內部，設有冷卻水流通路（未圖示）， ® 以冷卻這些構件。 又，在如以上所構成之陽極16b及陰極16C，連接有 施加預定放電電壓並在陽極16b與陰極16c之間產生電弧 之電源單元1 8。 電源單元18是對上述的陽極16b及陰極16c施加預定 放電電壓，產生電漿電弧者，具體而言，如圖2所示，理 想爲所謂的切換方式直流電源裝置，即，以整流器26將交 流電源24進行全波整流，藉由以平滑反應器28a及平滑電 ® 容器28b所構成的直流過濾器28加以平滑並直流化後，將 直流藉由以IGBT、電晶體等的切換元件進行高頻切換之 - 變換器30變換成高頻交流，將此高頻交流以變壓器32變壓 . 成預定電壓後，再次以整流器34進行整流，藉由以平滑反 應器36a及平滑電容器36b所構成的直流過濾器36加以平 滑並供給直流。 作動氣體輸送供給單元20(參照圖丨）是對陽極16b的電 漿產生室1 6d內，輸送供給作爲作動氣體g所使用之氮氣 ，具有：儲藏作動氣體G之儲藏槽2〇a;及將此儲藏槽20a -13- (10) 200829325 與設置於陽極16b的作動氣體輸送供給口 16F予以連通之 作動氣體輸送供給配管20b。 在本實施例的電漿分解機12，於作動氣體輸送供給配 管2 Ob安裝有質量流量控制手段38。此質量流量控制手段 3 8是用來控制，經由作動氣體輸送供給配管20b對電漿產 生室16d內所輸送供給之作動氣體G的量之手段。具體而 言，如圖3所示，具備：測定流動於感測器管路（未圖示） ^ 內之作動氣體G的質量流量，將其測定値作爲流量訊號 加以輸出之流量感測器40 ;控制作動氣體輸送供給配管 2 0b內的作動氣體G的流通量並以電磁閥所構成之控制閥 42 ;及將流量感測器40的流量訊號與後述的溫度檢測手段 5 8所輸出之流量設定訊號L 1進行比較，使兩者成爲相等 地，對控制閥42輸出控制電流之比較控制電路44。 反應器22是具有以具備外管46及內管48之雙重管所構 成的本體22a(參照圖4)。構成此本體22a之外管46及內管 48爲 SUS3 0 4或赫史特合金（登錄商標）等的具有耐触性之 金屬材料所形成的直管型構件，藉由將這些管之長方向兩 • 端部相互地連結，使得在外管46與內管48之間形成預定空 . 間S。再者，構成本體2 2a之材料是在考量內管48的內面 與空間S之間的熱傳導性之情況，如上述般，金屬材料爲 佳，但在例如，處理對象氣體F的腐飩性極強，具耐蝕性 之金屬材料亦會被腐蝕之情況時，亦能以可鑄耐火材 (castable)或陶瓷等的材料來構成本體22a。即，構成本體 22a之材料不限於金屬材料。 -14- (11) 200829325 又，在外管46的下部（即，離電漿噴燈16最遠之端部） ，貫設有用來將由半導體製造裝置等所排出之處理對象氣 體F導入至空間S的處理對象氣體導入口 50，在內管4 8的 上部（即最接近電漿噴燈1 6之端部），將已導入至空間S內 之處理對象氣體F朝大氣壓電漿P呈螺旋狀吹入之複數個 處理對象氣體輸送供給口 52(參照圖5)。因此，處理對象 氣體F是由上朝下（即，由大氣壓電漿P的下游側朝上游 ^ 側）流通外管46與內管48之間的空間S後，輸送供給至大 氣壓電漿P。 又，在本體22a，於與朝內部噴出之大氣壓電漿P的 下游側前端對應的位置，設有階差部54，與較階差部54更 上側的大氣壓電漿P相對面之部分L的外管46及內管48之 徑被擴大，並且在該擴徑部分L之內管48的內面，由可鑄 耐火材所構成並具有與擴徑部分L之內管48的內徑大致相 同的外徑之圓筒狀耐火壁5 6可更換地被嵌插著。Therefore, for example, when the temperature in the reactor 22 is a predetermined temperature (a temperature of about 1 300 ° C or more) in which the hardly decomposable perfluorocarbon can be easily thermally decomposed, the temperature detecting means 58 is required. The detected temperature in the reactor 22 and the mass flow control means 38 act to increase or decrease the amount of the operating gas G supplied to the atmospheric piezoelectric slurry P, and adjust the atmospheric piezoelectric slurry P -10- (7) (7) 200829325 Output. As a result, the temperature in the reactor 2 2 is constantly maintained at the set temperature, and the treatment target gas F can be surely removed in the reactor 22. Further, since the reactor 22 is not fixedly exposed to the ultra-high temperature heat generated when the output of the atmospheric piezoelectric slurry p is extremely large, damage to these members due to ultra-high temperature heat can be extremely delayed. [Effects of the Invention] According to the invention of claim 1, the high-temperature exhaust gas including the operating gas and the target gas after the thermal decomposition is discharged from the plasma decomposition machine, and is not in the cooling portion. In the state of contact with moisture, it is cooled to a temperature at which no nitrogen oxides are generated. Therefore, the opportunity for contact of nitrogen having high temperature with oxygen can be remarkably reduced, and the generation of by-products of nitrogen oxides can be minimized. Further, according to the invention of claim 3, since the reactor is configured by a double pipe and exchanges heat between the exhaust body R and the processing target gas F, the processing target gas to be supplied and supplied to the atmospheric piezoelectric slurry can be sufficiently sufficiently Preheating, while cooling the high temperature exhaust gas after cooling. Therefore, the output of the atmospheric piezoelectric slurry can be reduced, and the gas to be processed of a large flow rate can be thermally decomposed and removed reliably and efficiently, and the cooling load of the cooling portion of the exhaust body after the thermal decomposition can be further reduced. Further, according to the invention of claim 4, the generation of nitrogen oxides can be suppressed, and the decomposition of the gas to be treated can be promoted. Further, according to the invention of claim 5, the gas to be treated can be reliably decomposed and removed, and the continuous operation can be stably performed for a long period of time. -11 - (8) 200829325 As described above, according to the present invention, it is possible to provide a gas processing apparatus which can suppress the generation of by-products of nitrogen oxides as much as possible and which can decompose the gas to be treated. [Embodiment] Hereinafter, the present invention will be described based on the illustrated embodiments. Fig. 1 is a view showing a schematic configuration of a gas treatment device 10 of the present embodiment. As shown in the figure, the gas treatment device 10 of the present embodiment is basically constituted by a plasma decomposition machine 12 and a cooling unit 14. The plasma decomposition machine 12 is a device for thermally decomposing the treatment target gas F using a high-temperature atmospheric piezoelectric slurry. The plasma torch 16, the power source unit 18, the actuating gas delivery and supply unit 20, the reactor 22, and the decomposition aid are supplied and supplied. The unit 23 and the like are constituted. The plasma torch 16 is a short cylindrical burner body 16a having a high-temperature atmospheric piezoelectric slurry P and having a metal material such as brass and having openings on both sides. An anode 16b is connected to the front end of the burner body 16a, and a rod-shaped cathode 16c is mounted inside. The anode 16b is a cylindrical nozzle having a high-melting point metal having high conductivity such as copper or tungsten, and having a plasma generating chamber 16d recessed therein. A plasma discharge hole 16e for ejecting the atmospheric piezoelectric slurry P generated in the plasma generation chamber 16d is disposed at a lower central portion of the anode 16b, and an operating gas delivery supply port 1 is provided at an upper portion of the side surface of the anode 16b. 6f. The cathode 16c is formed by a body portion formed of a high-melting point metal having high conductivity such as copper, and a tungsten body formed by mixing tungsten or tantalum and having an outer diameter of -12-200829325 (9). A rod-shaped member formed by the end portion of the reduced diameter. The front end portion of the cathode 16c is disposed in a plasma generating chamber recessed in the anode 16b. Further, between the anode 16b and the cathode 16c, insulation such as tetrafluoroethylene resin or ceramic is interposed. The material (not shown) is such that no energization (short circuit) occurs between the anode and the cathode via the burner body 16a. Further, inside the anode 16b and the cathode 16c, a cooling water flow path (not shown) is provided, and the components are cooled. Further, in the anode 16b and the cathode 16C configured as described above, a power supply unit 18 to which a predetermined discharge voltage is applied and an arc is generated between the anode 16b and the cathode 16c is connected. The power supply unit 18 applies a predetermined discharge voltage to the anode 16b and the cathode 16c described above to generate a plasma arc. Specifically, as shown in FIG. 2, a so-called switching mode DC power supply device is preferably used, that is, the rectifier 26 is used for the alternating current. The power supply 24 is full-wave rectified, smoothed and DC-converted by a DC filter 28 composed of a smoothing reactor 28a and a smoothing electric container 28b, and then the direct current is high-frequency by switching elements such as IGBTs and transistors. Switching - The converter 30 is converted into a high frequency alternating current, and the high frequency alternating current is transformed by the transformer 32. After a predetermined voltage, it is rectified by the rectifier 34 again, and the direct current is formed by the smoothing reactor 36a and the smoothing capacitor 36b. The filter 36 is smoothed and supplied with direct current. The actuating gas supply and supply unit 20 (see FIG. 丨) is a nitrogen gas used for the actuating gas g in the plasma generating chamber 16d of the anode 16b, and has a storage tank 2〇a for storing the operating gas G; The storage tank 20a - 13 - (10) 200829325 is an operating gas delivery supply pipe 20b that communicates with the operating gas delivery supply port 16F provided in the anode 16b. In the plasma decomposition machine 12 of the present embodiment, the mass flow control means 38 is attached to the operating gas delivery supply pipe 2 Ob. This mass flow rate control means 38 is a means for controlling the amount of the operating gas G supplied to the plasma generating chamber 16d via the operating gas delivery supply pipe 20b. Specifically, as shown in FIG. 3, a flow rate sensor 40 that measures the mass flow rate of the operating gas G flowing in the sensor line (not shown) ^ and measures the enthalpy as a flow signal is provided. a control valve 42 that controls the flow rate of the operating gas G in the operating gas delivery supply pipe 20b and is composed of a solenoid valve; and a flow rate signal of the flow rate sensor 40 and a flow rate outputted by a temperature detecting means 58 to be described later The setting signal L 1 is compared to make the two equal, and the control valve 44 outputs a control current comparison control circuit 44. The reactor 22 has a main body 22a (see Fig. 4) which is formed of a double tube including an outer tube 46 and an inner tube 48. The tube 46 and the inner tube 48 which constitute the main body 22a are straight tube type members formed of a metal material having a contact resistance such as SUS3 0 4 or Herstite (registered trademark), and the long direction of the tubes is obtained. The two ends are joined to each other such that a predetermined space S is formed between the outer tube 46 and the inner tube 48. Further, the material constituting the body 2 2a is a case in which the thermal conductivity between the inner surface of the inner tube 48 and the space S is considered. As described above, the metal material is preferable, but for example, the corrosion of the processing target gas F is good. When the extremely strong metal material having corrosion resistance is also corroded, the body 22a can be formed of a castable material such as castable or ceramic. That is, the material constituting the body 22a is not limited to the metal material. Further, in the lower portion of the outer tube 46 (that is, the end portion farthest from the plasma torch 16), the processing target gas F discharged from the semiconductor manufacturing apparatus or the like is introduced into the space S. The processing target gas introduction port 50, the upper portion of the inner tube 48 (i.e., the end closest to the plasma torch 16), spirally injects the processing target gas F introduced into the space S toward the atmospheric piezoelectric slurry P. The plurality of processing target gas delivery supply ports 52 (see FIG. 5). Therefore, the processing target gas F flows from the upper side (i.e., from the downstream side of the atmospheric piezoelectric slurry P toward the upstream side) to the space S between the outer tube 46 and the inner tube 48, and is then supplied and supplied to the atmospheric piezoelectric slurry P. Further, in the main body 22a, a step portion 54 is provided at a position corresponding to the downstream end of the atmospheric piezoelectric slurry P to be ejected inside, and a portion L of the opposite surface of the atmospheric piezoelectric slurry P from the upper step portion 54 is provided. The outer tube 46 and the inner tube 48 are enlarged in diameter, and the inner surface of the inner tube 48 of the enlarged diameter portion L is composed of a castable refractory material and has substantially the same inner diameter as the inner tube 48 of the enlarged diameter portion L. The cylindrical refractory wall 56 of the outer diameter is replaceably inserted.
^ 此反應器22是上端連結於電漿噴燈16的大氣壓電漿P 噴出側，設置於下端之開口 22b成爲，包含在反應器22內 . 進行了分解處理之處理對象氣體F與作動氣體G的排氣 . 體R的排出端。 又，在圍繞大氣壓電漿P及處理對象氣體F之該反應 器22，於其內部空間，形成有受到高溫大氣壓電漿P所昇 溫之高溫領域。在本實施例，於此反應器22，安裝有用 來檢測反應器22內的溫度之溫度檢測手段5 8。 溫度檢測手段5 8是如圖1所示，以：安裝成使反應器 -15- (12) 200829325 22的內表面側與外表面側連通，檢測反應器22的內面與大 氣壓電漿P之間隙（即上述的高溫領域）之溫度的1個或複 數個熱電偶5 8 a ;對熱電偶5 8 a及質量流量控制手段3 8電 性連接，且對質量流量控制手段38輸出預定訊號（本實施 例的情況爲「流量設定訊號L 1」），使由熱電偶5 8a所輸 入的溫度檢測訊號L2是與預先設定的設定溫度一致之控 制器58b所構成。 ^ 分解助劑輸送供給單元23，如圖4所示，爲用來將水 分、氫及氨等之處理對象氣體F的分解助劑A輸送供給 至反應器22的單元，以：安裝於外管46的內面，開口於空 間S，並以SUS3 04等的金屬所形成之噴嘴60 ;將分解助 劑 A導引至噴嘴60之配管62 ;安裝於配管62之流量計64 ;以及安裝於噴嘴60與流量計64之間的配管的流量調整閥 66及停止閥68所構成的。藉此，利用在將分解助劑A導 引至配管62並將停止閥68全開後，一邊觀看流量計64—邊 操作流量調整閥66，能夠將預定流量的分解助劑A輸送 供給至空間S。 、 冷卻部14，如圖1所示，爲接收由反應器22的開口 22b . 所排出的高溫排氣體R，奪去排氣體R所具有的熱，將排 氣體R冷卻至至少不會產生氮氧化物之溫度爲止者，在本 實施例，大致以排氣體導入導管70、熱交換器72、及排氣 體排出導管74所構成。 排氣體導入導管70是一端連接於反應器22的開口 22b ，另一端連接於熱交換器72之導管，內面是以耐火材76內 16- (13) 200829325 襯著。當然，耐火材76亦可爲耐火材與隔熱材之積層材。 又，耐火材等的材質，因應排氣體R的性質，選擇具優良 的耐熱性或耐磨損性之材質。 熱交換器72是如圖6所示，具有：大致呈長方體狀之 外殼77 ;將設置於外殻77所具有的1個面（圖6中的左側面） 的複數個開口 〇與設置於與該面相對向的其他面（圖6中的 右側面）之開口 0連通，安裝於外殻77的內部之複數個傳 ^ 熱管7 8 ;朝向與傳熱管7 8正交的方向，區隔外殼7 7的內側 之複數個區隔板80 ;連接於設置於外殻77(本實施例爲圖6 中的上面）並用來將冷卻水C導入至外殼77的內部的冷卻 水入口孔82之冷卻水導入管84 ;及連接於用來將冷卻水C 由外殼77的內部排出的冷卻水出口孔86之冷卻水排出管88 又，複數個區隔板80是如圖6所示，交互地配設著， 0 一端與外殼77內部的上面連接而另一端在由外殼77內部的 下面分離的狀態安裝之區隔板、與一端由外殼77內部的上 面分離而另一端在連接於殼77內部的下面之狀態下被安裝 - 之區隔板。 - 再者，在本實施例，考量耐腐蝕性，而對傳熱管78使 用赫史特合金（登錄商標），但若爲因應排氣體R的性質之 具有耐腐蝕性及耐熱性之材質的話，亦可使用其他材質。 又，熱交換器72的能力，若可將預定排氣體R冷卻至較氮 氧化物產生溫度下限之500 °C左右更低的溫度的話即可。 此時，理想爲儘可能以端時間將排氣體R的溫度冷卻（即 -17- (14) 200829325 ，急冷）。 排氣體排出導管74是如圖1所示，爲一端連接於熱交 換器72、另一端連接於未圖示的其他排氣體處理裝置等之 導管。再者，在本實施例，排氣體排出導管74的內面是以 耐火材90內襯著，但耐火材等的材質是因應由熱交換器72 所排出的排氣體R的溫度設定或因應排氣體R的性質’ 選擇具有優良的耐熱性或耐磨損性之材質。且’在排氣體 ^ R的溫度十分低的情況，亦可省略利用耐火材90之內襯。 如此，冷卻部14是氧或水分不會與由電漿分解機12所 排出的排氣體R接觸，能夠將排氣體R冷卻至不會產生 氮氧化物之溫度爲止。（再者，前述「氧或水分」不包含 ，在處理對象氣體F被供給至電漿分解機1 2前，含於處理 對象氣體F中的氧或水分、或在處理對象氣體F賦予至大 氣壓電漿P爲止，加於處理對象氣體F之氧或水分。例如 0 ，由噴嘴60添加至處理對象氣體F之水分則不含於前述「 氧或水分」中）。 其次，在使用本實施例之氣體處理裝置10除去處理對 - 象氣體F之際，首先’開啓未圖示的電漿分解機12的電源 ，使將控制器5 8b的設定溫度設定成處理對象氣體F容易 熱分解之預定溫度的溫度檢測手段58作動，並且使質量流 量控制手段38作動’對電漿產生室16d內，輸送供給作動 氣體G。又，對熱交換器72開始進行冷卻水C的供給。 接著，使電源單元18作動，並且開啓電漿分解機12的 大氣壓電漿點火開關（未圖示），對電漿噴燈1 6的電極1 6b -18- (15) 200829325 ' 16c間施加電壓，使大氣壓電漿P由電漿噴出孔I6e噴 出。 在此，在大氣壓電漿P剛噴出後，以熱電偶58&所測 量到的反應器22內的溫度較設定溫度低之情況時，由溫度 檢測手段5 8的控制器5 8b，對質量流量控制手段3 8的比較 控制電路44，賦予預定流量設定訊號L 1，以增加作動氣 體G的輸送供給量。於是，在比較控制電路44，此流量 設定訊號L 1與流量感測器40的流量訊號被比較，由此比 較控制電路4 4，對控制閥4 2，賦予預定控制電流，以使兩 者變得相等（具體而言，增加作動氣體G的輸送供給量）。 其結果，控制閥42進行打開操作，增加對電漿產生室I6d 內之作動氣體G的輸送供給量，使得大氣壓電漿P的輸 出上升，成爲反應器22內急速昇溫。 接著，當以溫度檢測手段5 8所檢測的反應器22內的溫 0 度到達預定設定溫度時，則以圍繞大氣壓電漿P的方式， 呈螺旋狀地供給處理對象氣體F。又，同時，將分解助劑 A由噴嘴60供給至空間S，開始進行處理對象氣體F的分 * 解。 - 包含在內管48的內側所分解的處理對象氣體F與作動 氣體G之排氣體R是由反應器22的開口 22b排出後，流通 過冷卻部14的排氣體導入導管70，由設置於熱交換器72的 側面之開口 〇導入至傳熱管7 8的內部。在排氣體R通過 傳熱管7 8的內部之際，排氣體R所具有的熱，經由傳熱管 78賦予至冷卻水C。此時，由冷卻水入口孔82所導入的冷 -19- (16) 200829325 卻水C是蛇行通過藉由區隔板80所區隔的外殻77的內部後 ，由冷卻水出口孔86排出。因此，若根據本實施例的熱交 換器72的話，因冷卻水C與傳熱管78接觸之機會増大’所 以，可有效率地將排氣體R冷卻。 如此，排氣體R是被冷卻至至少不會產生氮氧化物之 溫度爲止後，由熱交換器72排出，通過排氣體排出導管74 ，賦予至未圖示的其他排氣體處理裝置。The reactor 22 is connected to the discharge port side of the atmospheric piezoelectric slurry P of the plasma torch 16 at the upper end, and the opening 22b provided at the lower end is contained in the reactor 22. The treatment target gas F and the actuation gas G which have been subjected to the decomposition treatment are included. Exhaust. The discharge end of the body R. Further, in the reactor 22 surrounding the atmospheric piezoelectric slurry P and the treatment target gas F, a high temperature region in which the high temperature atmospheric piezoelectric slurry P is heated is formed in the internal space thereof. In the present embodiment, a temperature detecting means 58 for detecting the temperature in the reactor 22 is installed in the reactor 22. The temperature detecting means 58 is as shown in Fig. 1, and is installed such that the inner surface side of the reactor -15-(12) 200829325 22 communicates with the outer surface side, and the inner surface of the reactor 22 and the atmospheric piezoelectric slurry P are detected. One or a plurality of thermocouples 5 8 a of the temperature of the gap (ie, the high temperature region described above); the thermocouple 58 8 a and the mass flow control means 38 are electrically connected, and the mass flow control means 38 outputs a predetermined signal ( In the case of this embodiment, the "flow rate setting signal L 1") is such that the temperature detecting signal L2 input from the thermocouple 58a is constituted by the controller 58b which matches the preset set temperature. ^ The decomposition aid supply unit 23 is a unit for supplying the decomposition aid A for treating the target gas F such as moisture, hydrogen, and ammonia to the reactor 22, as shown in Fig. 4, and is attached to the outer tube. The inner surface of 46, the nozzle 60 which is opened in the space S and is made of a metal such as SUS3 04, the pipe 62 which guides the decomposition aid A to the nozzle 60, the flow meter 64 attached to the pipe 62, and the nozzle The flow rate adjustment valve 66 and the stop valve 68 of the piping between the 60 and the flow meter 64 are formed. Thereby, after the decomposition aid A is guided to the piping 62 and the stop valve 68 is fully opened, the flow rate adjustment valve 66 is operated while viewing the flow meter 64, and the decomposition aid A of a predetermined flow rate can be supplied and supplied to the space S. . As shown in FIG. 1, the cooling unit 14 receives the high-temperature exhaust body R discharged from the opening 22b of the reactor 22, takes away the heat of the exhaust body R, and cools the exhaust body R to at least no nitrogen. In the present embodiment, the temperature of the oxide is substantially the same as that of the exhaust gas introduction duct 70, the heat exchanger 72, and the exhaust body discharge duct 74. The exhaust gas introduction duct 70 is a duct having one end connected to the opening 22b of the reactor 22 and the other end connected to the heat exchanger 72, and the inner surface is lined with a refractory material 76 16-(13) 200829325. Of course, the refractory material 76 may also be a laminate of a refractory material and a heat insulating material. Further, the material of the refractory material or the like is selected from materials having excellent heat resistance and wear resistance in response to the properties of the exhaust body R. As shown in FIG. 6, the heat exchanger 72 has a casing 77 having a substantially rectangular parallelepiped shape, and a plurality of openings 设置 provided on one surface (the left side surface in FIG. 6) of the casing 77 are provided. The opening 0 of the other face (the right side in FIG. 6) of the face is communicated with each other, and a plurality of heat transfer tubes 7 8 are mounted inside the outer casing 77; the direction is orthogonal to the heat transfer tube 7 8 A plurality of partition plates 80 on the inner side of the outer casing 7 7 are connected to the cooling water inlet holes 82 provided in the outer casing 77 (the upper surface in FIG. 6 in this embodiment) and used to introduce the cooling water C into the inside of the outer casing 77. a cooling water introduction pipe 84; and a cooling water discharge pipe 88 connected to the cooling water outlet hole 86 for discharging the cooling water C from the inside of the casing 77. Further, the plurality of partition plates 80 are alternately shown in FIG. Provided is a partition plate in which one end is connected to the upper surface of the outer casing 77 and the other end is separated from the lower surface of the outer casing 77, and one end is separated from the upper surface of the outer casing 77 and the other end is connected to the inside of the casing 77. The lower state is installed - the zone partition. Further, in the present embodiment, the corrosion resistance is considered, and the heat transfer tube 78 is made of Herstite (registered trademark), but if it is a material having corrosion resistance and heat resistance in response to the property of the exhaust body R, Other materials can also be used. Further, the capacity of the heat exchanger 72 may be such that the predetermined exhaust body R can be cooled to a temperature lower than about 500 ° C which is the lower limit of the nitrogen oxide generation temperature. At this time, it is desirable to cool the temperature of the exhaust body R as much as possible at the end time (i.e., -17-(14) 200829325, quenching). As shown in Fig. 1, the exhaust gas discharge conduit 74 is a conduit that is connected to the heat exchanger 72 at one end and to another exhaust gas treatment device (not shown) or the like at the other end. Further, in the present embodiment, the inner surface of the exhaust gas discharge conduit 74 is lined with the refractory material 90, but the material of the refractory material or the like is set or responsive to the temperature of the exhaust body R discharged from the heat exchanger 72. The nature of the gas R' is selected from materials having excellent heat resistance or wear resistance. Further, when the temperature of the exhaust body ^ R is extremely low, the lining by the refractory material 90 may be omitted. As described above, in the cooling unit 14, oxygen or moisture does not come into contact with the exhaust body R discharged from the plasma decomposition machine 12, and the exhaust body R can be cooled to a temperature at which nitrogen oxides are not generated. Further, the above-mentioned "oxygen or water" is not included, and oxygen or moisture contained in the processing target gas F or the target gas F is supplied to the atmospheric pressure before the processing target gas F is supplied to the plasma decomposition machine 1 2 The plasma P is added to the oxygen or moisture of the treatment target gas F. For example, 0, the water added to the treatment target gas F by the nozzle 60 is not contained in the above "oxygen or moisture". Next, when the processing of the target gas F is performed by using the gas processing apparatus 10 of the present embodiment, first, the power of the plasma decomposition machine 12 (not shown) is turned on, and the set temperature of the controller 58b is set as the processing target. The temperature detecting means 58 of the predetermined temperature at which the gas F is easily thermally decomposed is actuated, and the mass flow rate controlling means 38 is actuated to supply the operating gas G to the inside of the plasma generating chamber 16d. Further, the heat exchanger 72 starts the supply of the cooling water C. Next, the power supply unit 18 is actuated, and the atmospheric piezoelectric slurry ignition switch (not shown) of the plasma decomposition machine 12 is turned on, and a voltage is applied between the electrodes 1 6b -18-(15) 200829325 ' 16c of the plasma torch 16 . The atmospheric piezoelectric slurry P is ejected from the plasma ejection hole I6e. Here, after the atmospheric piezoelectric slurry P is ejected, the temperature of the reactor 22 measured by the thermocouple 58 & The comparison control circuit 44 of the control means 38 gives a predetermined flow rate setting signal L1 to increase the supply amount of the operating gas G. Then, in the comparison control circuit 44, the flow rate setting signal L1 is compared with the flow signal of the flow sensor 40, thereby comparing the control circuit 44, and giving the control valve 42 a predetermined control current to change the two. It is equal (specifically, the supply amount of the operating gas G is increased). As a result, the control valve 42 performs an opening operation to increase the amount of supply and supply of the operating gas G in the plasma generating chamber I6d, so that the output of the atmospheric piezoelectric slurry P rises and the temperature in the reactor 22 rises rapidly. Then, when the temperature is 0° in the reactor 22 detected by the temperature detecting means 58 to reach the predetermined set temperature, the processing target gas F is supplied in a spiral shape so as to surround the atmospheric piezoelectric slurry P. At the same time, the decomposition aid A is supplied from the nozzle 60 to the space S, and the division of the treatment target gas F is started. The exhaust gas R including the processing target gas F and the operating gas G, which are decomposed inside the inner tube 48, is discharged from the opening 22b of the reactor 22, and then flows through the exhaust gas introduction duct 70 of the cooling unit 14, and is disposed in the heat. The opening 〇 of the side of the exchanger 72 is introduced into the interior of the heat transfer tube 78. When the exhaust body R passes through the inside of the heat transfer tube 78, the heat of the exhaust body R is supplied to the cooling water C via the heat transfer tube 78. At this time, the cold -19-(16) 200829325 water C introduced from the cooling water inlet hole 82 is serpentine discharged through the cooling water outlet hole 86 through the inside of the outer casing 77 partitioned by the partition plate 80. . Therefore, according to the heat exchanger 72 of the present embodiment, since the chance of contact between the cooling water C and the heat transfer tube 78 is large, the exhaust body R can be efficiently cooled. In this manner, the exhaust body R is cooled to at least a temperature at which no nitrogen oxides are generated, and is discharged from the heat exchanger 72, and is supplied to the other exhaust gas treatment device (not shown) through the exhaust gas discharge conduit 74.
^ 因此，包含由電漿分解機12所排出的處理對象氣體F 與作動氣體G之高溫排氣體R是由電漿分解機12所排出 後，不會與氧氣及水分接觸，在冷卻部1 4，冷卻至不會產 生氮氧化物之溫度爲止。因此，不會有溫度高的氮與氧氣 結合的機會，不會產生氮氧化物之副產物爸，可將處理對 象氣體F予以熱分解。 又，若根據本實施例的話，因反應器22是以雙重管所 0 構成，並且，在外管46的下部設有處理對象氣體導入口 50 ，在內管48的上部設有處理對象氣體輸送供給口 52，所以 ，處理對象氣體F是由下朝上，流通過外管46與內管48之 - 間的空間S後，輸送供給至大氣壓電漿P。此時，反應器 - 22內部的熱，經由內管48，賦予至流通於空間S之處理對 象氣體F，輸送供給至大氣壓電漿P之處理對象氣體F被 預熱。具體而言，在將反應器22內的設定溫度設爲〗100°C 〜1 3 00°C的範圍之預定溫度之情況時，能夠將通過空間S 並由處理對象氣體輸送供給口 52朝大氣壓電漿P輸送供給 之處理對象氣體F的溫度昇溫至大約800〜1 000 °C左右。 -20- (17) 200829325 再者，處理對象氣體導入口 5 〇與處理對象氣體輸送供給口 52之位置關係，若爲處理對象氣體F可流通空間S而被充 分地預熱的話，則不限於本實施例的形態，亦可爲其他形 能〇 又，因反應器22內面的與大氣壓電漿P相對面之位置 ，設有由可鑄耐火材所構成之耐火壁56，所以，可防止因 大氣壓電漿P所引起之反應器22的熱劣化而提昇反應器22 胃 的耐久性，並且，能夠在較反應器22的耐火壁56更下游側 ，在高溫排氣體R與低溫的處理對象氣體F之間充分地 進行熱交換。又，因藉由在反應器22設置階差部54，使得 流通於外管46與內管48之間的空間S之處理對象氣體F的 氣流產生亂流，而可增長在空間S之滯留時間，所以，可 更有效過地將輸送供給至大氣壓電漿P之處理對象氣體F 予以預熱。且，因耐火壁56可更換地被安裝著，所以，即 使耐火壁56因大氣壓電漿P的熱產生熱劣化，也只要更換 此部分即可，可縮短維修時的停止時間，可提升氣體處理 裝置10的運轉率。 - 又，因在高溫排氣體R與低溫的處理對象氣體F之 . 間進行熱交換，所以，可同時地執行，輸送供給至大氣壓 電漿P之處理對象氣體F的預熱與排氣體R的冷卻。因 此，可減低後段的冷卻部1 4所擔負之排氣體R的冷卻負擔 〇 又，在被這樣預熱之處理對象氣體F由處理對象氣體 輸送供給口 52導入至內管48的內側前，將由噴嘴60所供給 -21 - (18) 200829325 的分解助劑A添加至處理對象氣體F。即，當以水分作爲 分解助劑A加以添加時，則會產生如以下之反應。 [化學式1]Therefore, the high-temperature exhaust gas R including the processing target gas F and the operating gas G discharged from the plasma decomposition machine 12 is discharged by the plasma decomposition machine 12, and is not in contact with oxygen and moisture, and is cooled in the cooling unit 14 Cool until the temperature of the nitrogen oxides does not occur. Therefore, there is no opportunity for high temperature nitrogen to combine with oxygen, and no by-product of nitrogen oxides, dad, can thermally decompose the treated object F. Further, according to the present embodiment, the reactor 22 is constituted by a double tube 0, and the processing target gas introduction port 50 is provided in the lower portion of the outer tube 46, and the processing target gas delivery supply is provided in the upper portion of the inner tube 48. Since the processing target gas F flows from the bottom to the top through the space S between the outer tube 46 and the inner tube 48, it is supplied and supplied to the atmospheric piezoelectric slurry P. At this time, the heat inside the reactor - 22 is supplied to the treated object gas F flowing through the space S via the inner tube 48, and the processing target gas F supplied to the atmospheric piezoelectric slurry P is preheated. Specifically, when the set temperature in the reactor 22 is set to a predetermined temperature in the range of 100 ° C to 1 300 ° C, the passage space S can be supplied from the processing target gas supply port 52 to the atmospheric pressure. The temperature of the processing target gas F supplied by the plasma P is heated to about 800 to 1 000 °C. -20- (17) 200829325 The positional relationship between the process gas inlet port 5 and the process target gas supply and supply port 52 is not limited to the case where the process target gas F can be sufficiently warmed up by the space S. The form of the present embodiment may be another shape energy, and the refractory wall 56 made of a castable refractory material is provided at a position opposite to the atmospheric piezoelectric slurry P on the inner surface of the reactor 22, so that it can be prevented. The durability of the stomach of the reactor 22 is improved by the thermal deterioration of the reactor 22 caused by the atmospheric piezoelectric slurry P, and can be processed on the downstream side of the refractory wall 56 of the reactor 22 at the high temperature exhaust body R and the low temperature. The heat exchange between the gases F is sufficiently performed. Further, since the step portion 54 is provided in the reactor 22, the airflow of the processing target gas F flowing through the space S between the outer tube 46 and the inner tube 48 is turbulent, and the residence time in the space S can be increased. Therefore, the treatment target gas F supplied to the atmospheric piezoelectric slurry P can be preheated more efficiently. Further, since the refractory wall 56 is replaceably attached, even if the refractory wall 56 is thermally deteriorated by the heat of the atmospheric piezoelectric slurry P, it is only necessary to replace the portion, and the stop time during maintenance can be shortened, and the gas treatment can be improved. The operating rate of the device 10. In addition, since heat exchange is performed between the high-temperature exhaust body R and the low-temperature processing target gas F, the preheating of the processing target gas F supplied to the atmospheric piezoelectric slurry P and the exhaust body R can be simultaneously performed. cool down. Therefore, the cooling load of the exhaust body R by the cooling unit 14 in the subsequent stage can be reduced, and the process target gas F thus preheated is introduced into the inner side of the inner tube 48 from the processing target gas delivery supply port 52. The decomposition aid A supplied by the nozzle 60 to -21(2008) is added to the treatment target gas F. That is, when water is added as the decomposition aid A, a reaction such as the following occurs. [Chemical Formula 1]
CF4 + 2H20 —C02 + 4HFCF4 + 2H20 — C02 + 4HF
[化學式2][Chemical Formula 2]
SF6 + 3H20 —S03 + 6HFSF6 + 3H20 — S03 + 6HF
在此，因對外管4 6與內管48之間的空間S或處理對象 氣體輸送供給口 52供給作爲分解助劑A之水分，所以， 能在處理對象氣體F與高溫作動氣體G混合前，將水分 混合至處理對象氣體F。藉此，可在處理對象氣體F與作 動氣體G混合前，開始進行利用水分之處理對象氣體F 的分解反應，可一邊抑制氮氧化物的副產物產生，一邊提 高處理對象氣體F的分解效率。 即，處理對象氣體F是藉由流通於外管46與內管48之 間的空間S，來接受反應器22內部的熱，進行預熱。當對 此已被預熱之處理對象氣體F添加作爲分解助劑A之水 分時，則如[化學式1 ]或[化學式2 ]所示的分解反應是幾乎 與添加水分的同時產生。因此，在處理對象氣體F與作動 氣體G混合之際，含於水分之氧是已經與含於處理對象 氣體F之碳或硫磺反應，成爲化學性穩定的C〇2或S03 ’ 能夠抑制，含於作動氣體G之高溫氮與氧產生反應而產 生氮氧化物。 -22- (19) 200829325 另外，當以氫及氨作爲分解助劑A進行供給時，則 會產生如以下的反應。Here, since the water as the decomposition aid A is supplied to the space S between the outer tube 46 and the inner tube 48 or the processing target gas delivery supply port 52, before the processing target gas F and the high-temperature operating gas G are mixed, The moisture is mixed to the treatment target gas F. By this, the decomposition reaction of the treatment target gas F by the moisture is started before the treatment target gas F is mixed with the combustion gas G, and the decomposition efficiency of the treatment target gas F can be improved while suppressing the generation of by-products of nitrogen oxides. In other words, the processing target gas F is received by the space S between the outer tube 46 and the inner tube 48, and receives heat inside the reactor 22 to be preheated. When the water as the decomposition aid A is added to the treatment target gas F which has been preheated, the decomposition reaction as shown in [Chemical Formula 1] or [Chemical Formula 2] is generated almost simultaneously with the addition of moisture. Therefore, when the processing target gas F is mixed with the operating gas G, the oxygen contained in the water is reacted with carbon or sulfur contained in the gas F to be treated, and chemically stable C〇2 or S03' can be suppressed, including The high temperature nitrogen of the actuating gas G reacts with oxygen to produce nitrogen oxides. -22- (19) 200829325 In addition, when hydrogen and ammonia are supplied as the decomposition aid A, the following reaction occurs.
[化學式3] [化學式4] [化學式5] [化學式6][Chemical Formula 4] [Chemical Formula 5] [Chemical Formula 6]
CF4 + 4H2~>CH4 + 4HFCF4 + 4H2~>CH4 + 4HF
SF6 + 4H2 —H2S + 6HFSF6 + 4H2 — H2S + 6HF
3CF4 + 8NH3 —3CH4 + 4N2+12HF3CF4 + 8NH3 —3CH4 + 4N2+12HF
3SF6 + 8NH3 — 3H2S + 4N2 + 18HF 即，當對已被預熱之處理對象氣體F添加作爲分解助 劑A之氫或氨時，則比起處理對象氣體F未被預熱之情 況，容易產生如[化學式3]至[化學式6]所示的分解反應。 又，即使添加氫或氨，也會將成爲產生氮氧化物的原因之 氧導入至反應器，不必擔心會助長氮氧化物的副產物產生 ，可提高處理對象氣體F的分解效率。 又，在本實施例，噴嘴60是以 SUS304等的金屬所形 成的。藉此，在使用水分作爲分解助劑A之情況，被輸 送供給至噴嘴60之水，是在流通於噴嘴60的內部之際’接 收來自於流動於噴嘴6 0的外側且已被預熱之處理對象氣體 F的熱，由噴嘴60排出時，氣化而成爲水蒸氣。因此’不 需要設置用來將作爲分解助劑A之水予以氣化之特別裝 -23- (20) (20)200829325 置。又，例如，爲了處理〇_5L/miii的CF4之情況所應添加 的水之量是〇.8g/min(若爲水蒸氣的話，則爲IL/min)左右 ，進行水的氣化所需之熱量，比起已被預熱至800〜 1 0 00 °C左右爲止之處理對象氣體F所具有的熱量，爲微量 ，故，即使將處理對象氣體F所具有的熱用於進行水的氣 化，也不會有任何問題產生。 又，因僅將處理對象氣體F進行預熱，就能使低溫分 解性的處理對象氣體F分解，所以，對於全氟化碳這種難 分解性的處理對象氣體F，能有效率地賦予熱能量。因此 ，即使在減低大氣壓電漿P的輸出奁，將反應器22內的溫 度設定於ll〇〇°C〜1 3 00°C的範圍之情況，也能充分地分解 難分解性的處理對象氣體F，並且，亦可處理大流量的處 理對象氣體F。又，藉由如此減低大氣壓電漿p的輸出， 能夠延遲因電漿噴燈16或反應器22的熱劣化所造成之損傷 〇 且，在本實施例的電漿分解機1 2，檢測反應器22內的 溫度，並且因應此溫度檢測値，增減輸送供給至電漿噴燈 16之作動氣體G的量，使反應器22內的溫度成爲預定値 之方式，控制大氣壓電漿P的輸出。即，當反應器22內的 溫度變得較預定値高時，減少作動氣體G的輸送供給量 ，使大氣壓電漿P的輸出降低，相反地，當反應器22內的 溫度變成較β預定値低時，增加作動氣體G的輸送供給 量，使大氣壓電漿Ρ的輸出上昇。 因此，當反應器22內的溫度設定成如上述般可容易將 -24 - (21) 200829325 難分解性的全氟化碳進行熱分解之預定溫度（大約13〇〇°C 以上且不會對反應器22造成損傷之溫度）時，因應以溫度 檢測手段58所檢測到的反應器22內的溫度，質量流量控制 _ 手段38作動，增減作動氣體G的輸送供給量，調節大氣 壓電漿P的輸出。其結果，反應器22內的溫度經常被保持 於設定溫度，可在反應器22內，確實地除去包含難分解性 的全氟化碳之所有種類的PFCs等。又，由於電漿噴燈16 或反應器22，不會被恆定地曝露於，在大氣壓電漿P的輸 出極大化之際所產生的超高溫熱中，故，能夠極力地延遲 這些構件因超高溫熱造成損傷。 再者，在上述的實施例，記載著在冷卻部1 4，使用熱 交換器72之例子，但，冷卻部14若爲在氧或水分未混入至 排氣體R之狀態下，能夠將排氣體R冷卻至至少不會產 生氮氧化物之溫度爲止者的話，亦可爲例如，使排氣體R 0 流通於長導管的內側，將該導管的外側進行水冷之其他方 法者。又，在冷卻部1 4之低溫側媒體，亦可如上述的實施 例般使用水（水冷），亦可使用氣體（空冷）或油（油冷）。 - 又，在上述的實施例，顯示在反應器2 2的預定位置設 - 置階差部54，在較階差部54更上方的位置設置耐火壁之情 況，但，亦可不設置這種階差部54，而將反應器22的本體 22a作爲直管，在其內周面全面或僅上方側，設置耐火壁 56。其中，當在反應器22的內周面全面設置了耐火壁5 6之 情況，通過空間S之處理對象氣體F的預熱効果會降低。 又，在上述的實施例，顯示作爲反應器22，以雙重管 -25- (22) 2008293253SF6 + 8NH3 - 3H2S + 4N2 + 18HF, when hydrogen or ammonia as the decomposition aid A is added to the gas F to be treated which is preheated, it is easier to produce than when the treatment target gas F is not preheated. The decomposition reaction as shown in [Chemical Formula 3] to [Chemical Formula 6]. Further, even if hydrogen or ammonia is added, oxygen which is a cause of nitrogen oxides is introduced into the reactor, and there is no fear that the by-product of the nitrogen oxides is promoted, and the decomposition efficiency of the gas F to be treated can be improved. Further, in the present embodiment, the nozzle 60 is formed of a metal such as SUS304. Thereby, when water is used as the decomposition aid A, the water supplied to the nozzle 60 is received while flowing inside the nozzle 60 'received from the outside flowing to the nozzle 60 and has been preheated. When the heat of the target gas F is discharged from the nozzle 60, it is vaporized to become steam. Therefore, it is not necessary to provide a special device for vaporizing water as the decomposition aid A -23-(20) (20) 200829325. Further, for example, in order to process CF4 of 〇_5L/miii, the amount of water to be added is about 8 g/min (or IL/min if it is water vapor), and it is required to vaporize water. The amount of heat of the treatment target gas F that has been preheated to about 800 to 100 ° C is a small amount of heat, so that the heat of the treatment target gas F is used for the gas. There will be no problems. In addition, since the gas F to be treated which is low-temperature decomposable can be decomposed by preheating only the gas to be treated F, it is possible to efficiently impart heat to the gas F to be treated which is difficult to decompose, such as perfluorocarbon. energy. Therefore, even when the output enthalpy of the atmospheric piezoelectric slurry P is lowered and the temperature in the reactor 22 is set in the range of ll 〇〇 ° C to 1 300 ° C, the gas to be treated which is difficult to decompose can be sufficiently decomposed. F, and it is also possible to process the processing target gas F of a large flow rate. Further, by thus reducing the output of the atmospheric piezoelectric slurry p, it is possible to delay the damage caused by the thermal deterioration of the plasma torch 16 or the reactor 22, and in the plasma decomposition machine 12 of the present embodiment, the reactor 22 is detected. In response to this temperature detection, the amount of the operating gas G supplied to the plasma torch 16 is increased or decreased, and the temperature in the reactor 22 is set to a predetermined value to control the output of the atmospheric piezoelectric slurry P. That is, when the temperature in the reactor 22 becomes higher than the predetermined enthalpy, the supply amount of the actuating gas G is reduced, so that the output of the atmospheric piezoelectric slurry P is lowered, and conversely, when the temperature in the reactor 22 becomes lower than β. When it is low, the supply amount of the operating gas G is increased, and the output of the atmospheric piezoelectric pulp is increased. Therefore, when the temperature in the reactor 22 is set to be as described above, it is possible to easily thermally decompose the perfluorinated carbon of the insoluble hydrocarbon of -24 - (21) 200829325 at a predetermined temperature (about 13 〇〇 ° C or more and not When the temperature of the reactor 22 is caused by the temperature detecting means 58, the mass flow rate control means 38 actuates to increase or decrease the supply amount of the operating gas G, and adjust the atmospheric piezoelectric slurry P. Output. As a result, the temperature in the reactor 22 is constantly maintained at the set temperature, and all kinds of PFCs and the like containing the hardly decomposable perfluorocarbon can be surely removed in the reactor 22. Further, since the plasma torch 16 or the reactor 22 is not constantly exposed, in the ultra-high temperature heat generated when the output of the atmospheric piezoelectric slurry P is maximized, it is possible to delay the delay of these members due to the ultra-high temperature. Heat causes damage. Further, in the above-described embodiment, the example in which the heat exchanger 72 is used in the cooling unit 14 is described. However, the cooling unit 14 can discharge the exhaust body in a state where oxygen or moisture is not mixed into the exhaust body R. For example, if the R is cooled to at least the temperature of the nitrogen oxides, the exhaust gas R 0 may be circulated inside the long conduit, and the outside of the conduit may be water-cooled. Further, in the low temperature side medium of the cooling unit 14, water (water cooling) or gas (air cooling) or oil (oil cooling) may be used as in the above embodiment. Further, in the above-described embodiment, the step portion 54 is provided at a predetermined position of the reactor 2, and the refractory wall is provided at a position higher than the step portion 54, but the step may not be provided. The difference portion 54 has a main body 22a of the reactor 22 as a straight pipe, and a refractory wall 56 is provided on the entire inner circumferential surface or only on the upper side. Here, when the refractory wall 56 is entirely provided on the inner peripheral surface of the reactor 22, the preheating effect of the treatment target gas F passing through the space S is lowered. Further, in the above embodiment, it is shown as the reactor 22, with a double tube -25- (22) 200829325
構成者，但，亦可將反應器22做成三重管以上的多重管（ 未圖示），經由管壁，流通於在徑方向相互地隣接之密閉 空間之處理對象氣體F彼此逆流，且噴出至反應器22內之 大氣壓電漿P的噴出方向與流通於最接近反應器22內部的 密閉空間之處理對象氣體F的流通方向逆流。即，若在最 接近反應器22的內部之雙重管部分，大氣壓電漿P的噴出 方向與流通於該雙重管部分的密閉空間之處理對象氣體F ^ 的流通方向逆流的話，則流通於其外側之處理對象氣體F 的流路爲任何形態均可。再者，如上述般，若採用三重管 以上的多重管的話，則能夠將通過反應器22的管壁後釋放 至外部之熱更有效果地利用於處理對象氣體F的預熱。 又，在上述的實施例，如圖1所示，顯示將電漿噴燈 16與反應器22配設於上下而將大氣壓電漿P朝垂直方向噴 出之情況，但，亦可將電漿噴燈1 6與反應器22配設於水平 _ 方向，並且將大氣壓電漿P朝水平方向噴出。 又，在本實施例，作爲產生大氣壓電漿P之裝置，採 用利用直流電弧放電之裝置，但，若爲能夠產生大氣壓電 • 漿P者的話，則不限於此，亦能夠使用微波電漿等的熱電 - 漿。 又，因藉由在利用大氣壓電漿P之分解時，成爲還元 環境氣體地預先調整處理對象氣體F，可抑制氧與氮之反 應，所以可進一步抑制氮氧化物產生。 又，在處理對象氣體F未含有與水反應之氣體的情況 時，由噴嘴60所添加的水會直接與作動氣體G接觸，可 -26- (23) (23)200829325 能成爲氮氧化物產生之原因。因此，檢測在處理對象氣體 F是否含有與水反應之氣體，當未含有該氣體時，關閉停 止閥68停止水的添加，而當含有該氣體時，打開停止閥68 進行水的添加即可。 又，作爲賦予質量流量控制手段38的比較控制電路44 之流量設定訊號L 1，亦可賦予將作動氣體G的輸送供給 量做成一定之預定訊號，代替溫度檢測手段58所輸出之可 變訊號，並且如圖7所示，設置電源單元18所輸出之新的 電力之電力控制手段92，將溫度檢測手段5 8所輸出的訊號 作爲電流切換訊號，賦予至此電力控制手段92。 電力控制手段92是用來可將電源單元18所輸出的電力 變更者，具有電流檢測器94與電流設定手段96。 電流檢測器94是以比流器（CT)等所構成，檢測電源單 元1 8的輸出電流，輸出與該檢測電流値對應之預定電壓者 〇 電流設定手段96是如圖8所示，以可變式基準電壓輸 出手段98(本實施例的情況爲容量）及比較增大器100所構 成，以比較放大器100比較、放大電流檢測器94所輸出的 電壓與基準電壓輸出手段98所輸出的基準電壓，朝電源單 元18的變換器30輸出預定電流設定訊號，藉此，可變操作 變換器30。在此，基準電壓輸出手段98是藉由經由配線由 溫度檢測手段5 8所賦予的電流切換訊號，自動地切換。又 ，作爲基準電壓輸出手段98，使用容積之情況，利用電流 設定手段96之變換器30的可變操作成爲機械性控制，但作 -27- (24) 200829325 爲基準電壓輸出手段98，亦可採用根據由溫度檢測手段5 8 所賦予的電流切換訊號來輸出預定類比電壓之D/A模組（ 未圖示），將利用電流設定手段96之變換器30的可變操作 . 作成線性的連續控制。 又，亦可設置檢測反應器22內的溫度之溫度檢測手段 5 8，在作動氣體輸送供給單元20，設置根據溫度檢測手段 5 8所檢測到的溫度檢測値，控制輸送供給至電漿產生室 ® 1 6d內的作動氣體G的量之質量流量控制手段3 8，並且， 在電源單元1 8，安裝根據溫度檢測手段58所檢測到的溫度 檢測値來控制供給至電漿噴燈16的電極16b、16c之電力 量的電力控制手段92。 又，由於本裝置是用來分解氟化物等的氣體，將分解 後的排氣予以冷卻並加以排出之裝置，故需要除去排出氣 體。被排出的氣體，由於主要爲HF、C02、S03、N2等， ^ 故，主要之有害氣體的HF、S03是能以酸性氣體的吸著劑 或水洗滌器等吸收除去。即使在本發明之氣體處理裝置的 後段，採用濕式洗滌器，由本發明之氣體處理裝置1 〇所排 ^ 出的排氣體R的溫度也充分地降低，氮的活性也下降，因 - 此不會產生氮氧化物。因此，在本發明之氣體處理裝置的 後段，在用來進行吸收除害之裝置的種類上未有限制。再 者，作爲在前述濕式洗滌器所使用的水，使用由前述實施 例的熱交換器72所排出的溫度高的冷卻水C爲佳。這是由 於溫度高的水，其分子運動活潑，藉由將此水對排氣體R 進行噴灑（噴霧），可使排氣體R的洗淨效率提昇之故。 -28- 200829325 (25) 且，本裝置，除了氟化物以外，若爲可進行熱分解之 氣體的話，則可進行任何種類之氣體處理。 . [實施例] 使用本實施例之氣體處理裝置10，進行處理對象氣體 F的熱分解。作爲氣體處理裝置1 0的運轉條件，溫度檢測 手段58的控制器58b之溫度設定値設爲1200 °C。又，電漿 的直流電壓設爲100V左右，將直流電流設成在60A爲一 定。其結果，作爲作動氣體G之氮氣的流量大致成爲20L( 公升）/min左右。又，對熱交換器72之冷卻水C是20°C的 水以10L/min流通持續進行冷卻。又，由熱交換器72所排 出之排氣體R的溫度爲5 0 °C。 由於在這種條件下處理，於80L/min的氮包含 lOOcc/min的CF4之處理對象氣體F，故以4種方法，進行 ^ 分解處理。 首先，不添加分解助劑A，進行處理對象氣體F的處 理。此時，C F 4的分解率爲9 0 %，熱交換器7 2的出口之氮氧 - 化物的濃度，NO、N〇2均爲未滿檢測界限之lppm。 - 其次，由噴嘴60，將作爲分解助劑A之氫氣體3L/min 添加至處理對象氣體F。氫氣體的流量爲一邊以流量計64 加以確認，一邊操作流量調整閥66來進行。此時，CF4的 分解率爲99%，熱交換器72的出口之氮氧化物的濃度，NO 、Ν Ο 2均爲未滿檢測界限之1 p p m。 又，由噴嘴60，將作爲分解助劑 A之氨氣體2L/min -29- (26) 200829325 添加至處理對象氣體F。此時的CF4的分解率爲99%，熱 交換器72的出口之氮氧化物的濃度，NO、N02均爲未滿檢 測界限之Ippm。 且，由噴嘴60，以0.2g/min供給水。此時，CF4的分 解率爲99%，熱交換器72的出口之氮氧化物的濃度，NO 爲 20ppm、NO〗爲 lppm。 因此，由於在以往的技術（在將濕式洗滌器緊連接於 ^ 電漿分解機3後之情況），數千ppm的氮氧化物產生，可得 知，若根據本發明之氣體處理裝置1 0的話，可將氮氧化物 產生極力地抑制（做小）。 【圖式簡單說明】 圖1是顯示本發明之一實施例的氣體處理裝置的構成 圖。 圖2是顯示本發明之一實施例的電源單元之電路圖。 圖3是顯示本發明之一實施例的質量流量控制手段之 構成圖。 圖4是顯示本發明之一實施例的電漿分解機之構成圖 〇 圖5是圖4之V-V線斷面圖。 圖6是顯示本發明之一實施例的熱交換器本體之構成 圖（一部分斷面圖）。 圖7是顯示具備電力控制手段之實施例的圖。 圖8是顯示本發明之一實施例的電力控制手段之構成 -30- (27) (27)200829325 圖。 圖9是顯示以往的電漿分解機之圖。 【主要元件符號說明】 A :分解助劑 C :冷卻水 F :處理對象氣體 G :作動氣體 L 1 :流量設定訊號 L2 :溫度檢測訊號 P :大氣壓電漿 R :排氣體 S :空間 10 :氣體處理裝置 1 2 :電漿分解機 1 4 :冷卻部 1 6 :電漿噴燈 16a :噴燈本體 1 6 b :陽極（電極） 16c :陰極（電極） 1 6 d :電漿產生室 16e :電漿噴出孔 16f:作動氣體輸送供給口 1 8 :電源單元 -31 (28) (28)200829325 20 :作動氣體輸送供給單元 20a :儲藏槽 20b :作動氣體輸送供給配管 22 :反應器 23 :分解助劑輸送供給單元 24 :後流電源 26 :整流器 28 :直流過濾器 3 〇 :變換器 32 :變壓器 3 4 :整流器 3 6 :直流過濾器 3 8 :質量流量控制手段 40 :流量感測器 42 :控制閥 44 :比較控制電路 4 6 :外管 48 :內管 50:處理對象氣體導入口 52 :處理對象氣體輸送供給口 54 :階差部 5 6 :耐火壁 5 8 :溫度檢測手段 5 8 a :熱電偶 -32- (29) 200829325 5 8b :控制器 60 :噴嘴 62 :配管 6 4 :流量計 6 6 :流量調整閥 6 8 :停止閥 70 :排氣體導入導管 • 72 :熱交換器 74 :排氣體排出導管 76 :耐火材 77 :外殼 78 :傳熱管 80 :板 8 2 :冷卻水入口孔 84 :冷卻水導入管 8 6 :冷卻水出口孔 88 :冷卻水排出管 - 9 〇 :耐火材 . 92 :電力控制手段 94 :電流檢測器 96 :電流設定手段 98:基準電壓輸出手段 100 :比較放大器 - 33-In addition, the reactor 22 may be a plurality of tubes (not shown) having a triple pipe or more, and the processing target gas F flowing through the pipe wall in a sealed space adjacent to each other in the radial direction may flow back to each other and be ejected. The discharge direction of the atmospheric piezoelectric slurry P in the reactor 22 is opposite to the flow direction of the processing target gas F flowing through the sealed space closest to the inside of the reactor 22. In other words, when the discharge direction of the atmospheric piezoelectric slurry P is reversed to the flow direction of the processing target gas F^ flowing through the sealed space of the double pipe portion in the double pipe portion which is closest to the inside of the reactor 22, it flows to the outside. The flow path of the processing target gas F may be any form. Further, as described above, when a multiple pipe of a triple pipe or more is used, the heat released to the outside through the pipe wall of the reactor 22 can be more effectively utilized for preheating of the processing target gas F. Further, in the above-described embodiment, as shown in FIG. 1, the plasma torch 16 and the reactor 22 are disposed above and below, and the atmospheric piezoelectric slurry P is ejected in the vertical direction. However, the plasma torch 1 may be used. 6 is disposed in the horizontal direction with the reactor 22, and ejects the atmospheric piezoelectric slurry P in the horizontal direction. Further, in the present embodiment, a device using a DC arc discharge is used as the device for generating the atmospheric piezoelectric slurry P. However, the present invention is not limited thereto, and microwave plasma or the like can be used. Thermoelectric - pulp. In addition, when the decomposition of the atmospheric piezoelectric slurry P is utilized, the treatment target gas F is adjusted in advance as the ambient gas, and the reaction between oxygen and nitrogen can be suppressed, so that the generation of nitrogen oxides can be further suppressed. Further, when the processing target gas F does not contain a gas that reacts with water, the water added by the nozzle 60 is directly in contact with the operating gas G, and -26-(23) (23) 200829325 can be produced as nitrogen oxides. The reason. Therefore, it is detected whether or not the gas to be treated F contains a gas which reacts with water. When the gas is not contained, the shutdown valve 68 is closed to stop the addition of water, and when the gas is contained, the stop valve 68 is opened to add water. Further, as the flow rate setting signal L1 of the comparison control circuit 44 provided to the mass flow rate control means 38, a predetermined signal for giving a constant supply amount of the operating gas G may be given instead of the variable signal outputted by the temperature detecting means 58. As shown in FIG. 7, the power control means 92 for supplying new power output from the power supply unit 18 is provided to the power control means 92 as a current switching signal by the signal output from the temperature detecting means 58. The power control means 92 is for changing the power output from the power supply unit 18, and includes a current detector 94 and a current setting means 96. The current detector 94 is configured by a current transformer (CT) or the like, and detects an output current of the power supply unit 18, and outputs a predetermined voltage corresponding to the detection current 〇. The current setting means 96 is as shown in FIG. The variable reference voltage output means 98 (in the case of the present embodiment is a capacity) and the comparison increaser 100 are configured to compare and amplify the voltage output from the current detector 94 and the reference output from the reference voltage output means 98 by the comparison amplifier 100. The voltage is supplied to the inverter 30 of the power supply unit 18 to output a predetermined current setting signal, whereby the inverter 30 is operated variable. Here, the reference voltage output means 98 is automatically switched by the current switching signal given by the temperature detecting means 58 via the wiring. Further, as the reference voltage output means 98, when the volume is used, the variable operation of the inverter 30 by the current setting means 96 is mechanically controlled, but -27-(24) 200829325 is the reference voltage output means 98. A D/A module (not shown) that outputs a predetermined analog voltage based on the current switching signal given by the temperature detecting means 58 is used, and the variable operation of the inverter 30 using the current setting means 96 is made linearly continuous. control. Further, a temperature detecting means 5 for detecting the temperature in the reactor 22 may be provided. The operating gas delivery and supply unit 20 is provided with a temperature detecting unit detected by the temperature detecting means 58 to control the supply and supply to the plasma generating chamber. The mass flow control means 3 8 of the amount of the operating gas G in the ?6d, and the electrode 16b supplied to the plasma torch 16 is controlled by the temperature detecting means detected by the temperature detecting means 58 at the power supply unit 18. The electric power control means 92 of the electric power of 16c. Further, since the apparatus is a device for decomposing a gas such as fluoride and cooling the decomposed exhaust gas and discharging it, it is necessary to remove the exhaust gas. Since the discharged gas is mainly HF, CO 2 , S03, N 2 , etc., HF and S03, which are the main harmful gases, can be absorbed and removed by an acid gas sorbent or a water scrubber. Even in the latter stage of the gas treating apparatus of the present invention, the temperature of the exhaust gas R discharged from the gas treating apparatus 1 of the present invention is sufficiently lowered by the wet scrubber, and the activity of nitrogen is also lowered, because - Will produce nitrogen oxides. Therefore, in the latter stage of the gas treatment apparatus of the present invention, there is no limitation on the kind of means for performing absorption and detoxification. Further, as the water used in the wet scrubber, it is preferable to use the cooling water C having a high temperature discharged from the heat exchanger 72 of the above-described embodiment. This is because the water having a high temperature is active in molecular motion, and by spraying (spraying) the water to the exhaust body R, the cleaning efficiency of the exhaust body R can be improved. -28- 200829325 (25) Further, this device can be used for any type of gas treatment in addition to fluoride, if it is a gas that can be thermally decomposed. [Embodiment] Using the gas treatment device 10 of the present embodiment, thermal decomposition of the treatment target gas F is performed. As the operating condition of the gas processing apparatus 10, the temperature setting 控制器 of the controller 58b of the temperature detecting means 58 is set to 1200 °C. Further, the DC voltage of the plasma is set to about 100 V, and the DC current is set to be 60 A. As a result, the flow rate of the nitrogen gas as the operating gas G is approximately 20 L (liter) / min. Further, the cooling water C of the heat exchanger 72 was water at 20 ° C and was continuously cooled at 10 L/min. Further, the temperature of the exhaust body R discharged from the heat exchanger 72 was 50 °C. Since the treatment was carried out under such conditions, the nitrogen gas of 80 L/min contained 100 cc/min of the processing gas F of CF4, and therefore, the decomposition treatment was carried out in four ways. First, the treatment target gas F is treated without adding the decomposition aid A. At this time, the decomposition rate of C F 4 was 90%, and the concentration of nitrogen oxides at the outlet of the heat exchanger 72, NO and N〇2 were all 1 ppm below the detection limit. - Next, the hydrogen gas 3L/min as the decomposition aid A is added to the treatment target gas F by the nozzle 60. The flow rate adjustment valve 66 is operated while the flow rate of the hydrogen gas is confirmed by the flow meter 64. At this time, the decomposition rate of CF4 was 99%, and the concentration of nitrogen oxides at the outlet of the heat exchanger 72, NO and Ν 2 were 1 p p m which is less than the detection limit. Moreover, the ammonia gas 2L/min -29-(26) 200829325 as the decomposition aid A is added to the treatment target gas F by the nozzle 60. At this time, the decomposition rate of CF4 was 99%, and the concentration of nitrogen oxides at the outlet of the heat exchanger 72, NO and N02 were both Ippm of the detection limit. Further, water was supplied from the nozzle 60 at 0.2 g/min. At this time, the decomposition rate of CF4 was 99%, and the concentration of nitrogen oxides at the outlet of the heat exchanger 72 was 20 ppm for NO and 1 ppm for NO. Therefore, since the conventional technique (in the case where the wet scrubber is tightly connected to the plasma decomposition machine 3), thousands of ppm of nitrogen oxides are generated, it is understood that the gas treatment apparatus 1 according to the present invention If it is 0, the nitrogen oxides can be suppressed to a minimum (small). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a configuration diagram showing a gas processing apparatus according to an embodiment of the present invention. Fig. 2 is a circuit diagram showing a power supply unit of an embodiment of the present invention. Fig. 3 is a view showing the configuration of a mass flow control means according to an embodiment of the present invention. Fig. 4 is a view showing the configuration of a plasma decomposition machine according to an embodiment of the present invention. Fig. 5 is a cross-sectional view taken along line V-V of Fig. 4. Fig. 6 is a view (partial sectional view) showing a structure of a heat exchanger according to an embodiment of the present invention. Fig. 7 is a view showing an embodiment in which a power control means is provided. Fig. 8 is a view showing the configuration of a power control means according to an embodiment of the present invention -30-(27)(27)200829325. Fig. 9 is a view showing a conventional plasma decomposition machine. [Description of main component symbols] A: Decomposition aid C: Cooling water F: Process gas G: Actuating gas L 1 : Flow rate setting signal L2: Temperature detection signal P: Atmospheric piezoelectric slurry R: Exhaust body S: Space 10: Gas Processing apparatus 1 2 : Plasma decomposition machine 1 4 : Cooling section 1 6 : Plasma torch 16a : Lamp body 1 6 b : Anode (electrode) 16c : Cathode (electrode) 1 6 d : Plasma generating chamber 16e : Plasma Injection port 16f: Actuating gas delivery supply port 18: Power supply unit - 31 (28) (28) 200829325 20: Actuated gas delivery supply unit 20a: Storage tank 20b: Actuating gas delivery supply pipe 22: Reactor 23: Decomposition aid Conveying supply unit 24: After-current power supply 26: Rectifier 28: DC filter 3 〇: Inverter 32: Transformer 3 4: Rectifier 3 6 : DC filter 3 8 : Mass flow control means 40: Flow sensor 42: Control Valve 44: comparison control circuit 4 6 : outer tube 48 : inner tube 50 : treatment target gas introduction port 52 : treatment target gas delivery supply port 54 : step portion 5 6 : refractory wall 5 8 : temperature detecting means 5 8 a : Thermocouple-32- (29) 200829325 5 8b : Controller 60: Nozzle 62 : Piping 6 4 : Flowmeter 6 6 : Flow regulating valve 6 8 : Stop valve 70 : Exhaust gas introduction conduit • 72 : Heat exchanger 74 : Exhaust gas discharge conduit 76 : Refractory material 77 : Housing 78 : Heat transfer tube 80 : Plate 8 2 : Cooling water inlet hole 84 : Cooling water introduction pipe 8 6 : Cooling water outlet hole 88 : Cooling water discharge pipe - 9 〇: refractory material 92 : Power control means 94 : Current detector 96 : Current setting means 98 : Reference voltage output means 100: Comparison amplifier - 33-
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007006368 | 2007-01-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200829325A true TW200829325A (en) | 2008-07-16 |
Family
ID=39754118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096112509A TW200829325A (en) | 2007-01-15 | 2007-04-10 | Apparatus and method for processing gas |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5020749B2 (en) |
| KR (1) | KR20080067268A (en) |
| CN (1) | CN101224406A (en) |
| TW (1) | TW200829325A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI742424B (en) * | 2018-11-06 | 2021-10-11 | 日商康肯環保設備有限公司 | Exhaust gas introduction nozzle, water treatment device, and exhaust gas treatment device |
| TWI794201B (en) * | 2017-01-23 | 2023-03-01 | 韓商愛德華茲韓國有限公司 | Nitrogen oxide reduction apparatus and gas treating apparatus |
| TWI809590B (en) * | 2021-12-08 | 2023-07-21 | 漢科系統科技股份有限公司 | Programmable energy saving system |
| TWI811844B (en) * | 2021-11-15 | 2023-08-11 | 日揚科技股份有限公司 | Exhaust gas scrubber |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1391148B1 (en) * | 2008-08-06 | 2011-11-18 | Reco 2 S R L | METHOD AND APPARATUS FOR PURIFYING GAS |
| JP2011036772A (en) | 2009-08-10 | 2011-02-24 | Omega:Kk | Mechanism for deodorizing and cleaning voc gas |
| US8633648B2 (en) * | 2011-06-28 | 2014-01-21 | Recarbon, Inc. | Gas conversion system |
| GB2493751A (en) * | 2011-08-17 | 2013-02-20 | Edwards Ltd | Apparatus for cleaning a gas stream |
| KR101458677B1 (en) * | 2011-11-30 | 2014-11-05 | 롯데케미칼 주식회사 | Method for capturing and converting carbon dioxide from exhaust gas and apparatus for capturing and converting carbon dioxide from exhaust gas |
| WO2014124521A1 (en) * | 2013-02-15 | 2014-08-21 | Pyrogenesis Canada Inc. | High power dc non transferred steam plasma torch system |
| JP5623676B1 (en) * | 2014-02-12 | 2014-11-12 | カンケンテクノ株式会社 | Exhaust gas treatment burner and exhaust gas treatment apparatus using the burner |
| US9211500B2 (en) | 2014-04-29 | 2015-12-15 | Korea Institute Of Machinery & Materials | Plasma reactor for abating hazardous material |
| KR101642129B1 (en) * | 2014-04-29 | 2016-07-22 | 한국기계연구원 | Plasma reactor for eco_frindly processing |
| KR101633404B1 (en) * | 2014-09-04 | 2016-06-24 | 주식회사 지앤비에스엔지니어링 | Apparatus for processing waste gas |
| US9937467B2 (en) * | 2014-10-06 | 2018-04-10 | Kanken Techno Co., Ltd. | Exhaust gas processing device |
| KR101720987B1 (en) * | 2015-04-28 | 2017-04-10 | 주식회사 글로벌스탠다드테크놀로지 | Treating apparatus and method of non-degradable gas |
| CN104896488B (en) * | 2015-06-29 | 2016-08-24 | 青岛艳阳天环保有限公司 | A kind of system processing waste gas generated by burning garbage |
| KR102646623B1 (en) * | 2017-01-23 | 2024-03-11 | 에드워드 코리아 주식회사 | Plasma generating apparatus and gas treating apparatus |
| DE102017105094A1 (en) * | 2017-03-10 | 2018-09-13 | Eisenmann Se | Temperature control device for surface-treated objects such as vehicle parts |
| KR101937414B1 (en) * | 2017-06-09 | 2019-04-10 | 한국화학연구원 | Thermal decomposition process with high frequency induction heating for gas mixtures containing nitrous oxide |
| KR102031984B1 (en) * | 2018-07-13 | 2019-10-14 | (주)플라즈닉스 | Method and apparatus for treating object gas-containing effluent gas |
| EP3832697B1 (en) * | 2018-08-02 | 2023-06-07 | Fuji Corporation | Atmospheric-pressure plasma generator |
| CN112655280B (en) * | 2018-08-28 | 2023-10-20 | 株式会社富士 | Plasma generating device and plasma head cooling method |
| KR102248261B1 (en) * | 2019-07-04 | 2021-05-04 | 한국기계연구원 | SCRUBBER AND PFCs AND NOx REMOVING SYSTEM |
| CN110461082B (en) * | 2019-07-10 | 2021-11-30 | 江苏天楹环保能源成套设备有限公司 | Device and method for reducing NOx content in flame of air plasma torch |
| KR102619579B1 (en) * | 2021-08-11 | 2023-12-29 | 주식회사 피에스에스 | Plasma device for treating exhaust gas |
| CN113842755B (en) * | 2021-09-25 | 2023-11-24 | 常州诚鉺正环保技术有限公司 | Plasma washing purifying equipment |
| KR102455213B1 (en) * | 2022-03-29 | 2022-10-18 | 영진아이엔디(주) | Catalytic horizontal plasma scrubber having microwave and method for treating waste gas using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003236338A (en) * | 2002-02-15 | 2003-08-26 | Mitsubishi Electric Corp | Method and device for treating gas containing organic halide |
| JP2004313998A (en) * | 2003-04-18 | 2004-11-11 | Ebara Corp | Halide decomposing apparatus |
| JP4570506B2 (en) * | 2005-04-20 | 2010-10-27 | カンケンテクノ株式会社 | Plasma detoxifier and exhaust gas treatment system using the plasma detoxifier |
-
2007
- 2007-04-10 TW TW096112509A patent/TW200829325A/en unknown
- 2007-04-12 KR KR1020070036060A patent/KR20080067268A/en not_active Application Discontinuation
- 2007-04-18 CN CNA2007101008104A patent/CN101224406A/en active Pending
- 2007-09-06 JP JP2007231860A patent/JP5020749B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI794201B (en) * | 2017-01-23 | 2023-03-01 | 韓商愛德華茲韓國有限公司 | Nitrogen oxide reduction apparatus and gas treating apparatus |
| US11985754B2 (en) | 2017-01-23 | 2024-05-14 | Edwards Korea Ltd. | Nitrogen oxide reduction apparatus and gas treating apparatus |
| TWI742424B (en) * | 2018-11-06 | 2021-10-11 | 日商康肯環保設備有限公司 | Exhaust gas introduction nozzle, water treatment device, and exhaust gas treatment device |
| TWI811844B (en) * | 2021-11-15 | 2023-08-11 | 日揚科技股份有限公司 | Exhaust gas scrubber |
| TWI809590B (en) * | 2021-12-08 | 2023-07-21 | 漢科系統科技股份有限公司 | Programmable energy saving system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5020749B2 (en) | 2012-09-05 |
| JP2008194674A (en) | 2008-08-28 |
| CN101224406A (en) | 2008-07-23 |
| KR20080067268A (en) | 2008-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200829325A (en) | Apparatus and method for processing gas | |
| JP5952984B1 (en) | Exhaust gas treatment equipment | |
| JP6599392B2 (en) | Vapor plasma arc hydrolysis of ozone depleting substances. | |
| JP4724736B2 (en) | Plasma scrubber | |
| US7394041B2 (en) | Apparatus for treating a waste gas using plasma torch | |
| JP5307556B2 (en) | Gas processing equipment | |
| JP4570506B2 (en) | Plasma detoxifier and exhaust gas treatment system using the plasma detoxifier | |
| JP2011226775A (en) | Waste gas treatment apparatus | |
| TWI429477B (en) | A gas treatment device, a gas treatment system using the apparatus, and a gas treatment method | |
| KR20120021651A (en) | Apparatus and method for pfcs gas decomposition | |
| KR101226603B1 (en) | Apparatus for treating hazardous gas using counterflow of plasma and hazardous gas, method for treating hazardous gas using the same | |
| JP5848468B2 (en) | Reactor | |
| JP5547307B2 (en) | Scrubber burner | |
| JP2005205330A (en) | Plasma decomposition method of perfluoro compound exhaust gas, plasma decomposition apparatus using the method, and exhaust gas treating system mounted with the apparatus | |
| JP7021730B1 (en) | Semiconductor manufacturing exhaust gas treatment equipment | |
| KR101099140B1 (en) | Combustible gas scrubber | |
| WO2022101981A1 (en) | Gas processing furnace and exhaust gas processing device in which same is used | |
| KR101227717B1 (en) | Steam plasma torch | |
| WO2022208901A1 (en) | Treatment device for semiconductor manufacturing exhaust gas | |
| JP4570847B2 (en) | Method and apparatus for halogen-containing compound decomposition by plasma reaction method | |
| JP2006102630A (en) | Contaminant decomposition apparatus and contaminant treatment apparatus in soil |