TW201039908A - Vortex exhaust gas processor and method of the same - Google Patents

Vortex exhaust gas processor and method of the same Download PDF

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TW201039908A
TW201039908A TW98115863A TW98115863A TW201039908A TW 201039908 A TW201039908 A TW 201039908A TW 98115863 A TW98115863 A TW 98115863A TW 98115863 A TW98115863 A TW 98115863A TW 201039908 A TW201039908 A TW 201039908A
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Taiwan
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exhaust gas
vortex
liquid water
peripheral
gas processor
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TW98115863A
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Chinese (zh)
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TWI361100B (en
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Ji-Ren Tzou
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Ji-Ren Tzou
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Abstract

The present invention provides a processing method for a vortex exhaust gas processor. The method comprises a step of applying an inlet water to an upper opening of an outer tube element to form a first vortex water flow such that the first vortex water flow overflows the top of an inner tube element due to the top of the outer tube element higher than that of the inner tube element, and thereby forming a second vortex water flow onto inner side of the inner tube element. The next step is applying an inlet water to a lower opening of the outer tube element such that the spray nozzles located on the sidewall of the inner tube element may spray the uniform water spray to enhance reaction with exhaust gas to reach the purpose of reducing temperature, and to avoid sidewall erosion of the tube element and prevent reactant forming on the sidewall of the tube element from block.

Description

201039908 六、發明說明: 【發明所屬之技術領域】 種應用於半 方法。 本發明係與廢氣處理方法有關,特別是一 導體製程中之旋渦式廢氣處理器及其廢氣處理 【先前技術】 〇 〇 隨著台灣高科技產業的蓬勃發展,使 長更加快速,其中半導體產業包含積體電路產 業。半導體元件製程中衍生廢液、廢水、廢氣等 此相關業者設計開發了各種型式之廢氣處理系统,提供哈 各半導體廠或液晶顯示器製造廠使用。—般而言,半導^ 製程中或液晶顯示器製程中常使用的化學物質及其副產 物’可分為四類1燃性驗(例如SiH4#)、毒性氣體⑽ 如ASH#、PH3等)、腐蝕性氣體(例如HF、HC1等)及、、w室 效應氣體(例如CF4、NF3等)。另外,依據廢氣的特性二 分為四種處理方式:水洗式(處理水溶性氣體)、燃燒式(處 理易燃性及需高溫分解氣體)、吸附式(依吸附材種類處理 相對應之廢氣)及加熱水洗式(多數廢氣皆可處理)。各類型 之廢氣處理方式皆有其優缺點及其適用範圍。其中加熱水 洗式廢乳處理器是應用範圍最廣泛的處理方式。 由於上述四類氣體對環境或人體皆具有一定的危害, 必須防止其直接排放至大氣中。所以,一般半導體廠或液 晶顯示器製造廠都以加裝大型洗滌式中央廢氣處理系統 (Central Scrubber)處理廢氣。並且依各製程所衍生的氣體 特性及種類,選擇搭配相對應之廢氣處理設備,以有效解 201039908 決廢氣問題。 而由於製造設備安裝的工作區域多半離中央廢氣處理 系統有一段距離’部分製程中衍生之廢氣在輸送至中央廢 氣處理系統之前,常因氣體特性導致在管路中結晶或粉塵 堆積’造成管路堵塞並因此導致氣體外洩,嚴重者甚至引 發爆炸。因此在工作區域需配置適合製程氣體特性如前述 四種的小型廢氣處理設備(Local Scmbber),以減少在工作 區域滯留的廢氣,確保工作人員安全。 〇 習知技術中,加熱水洗廢氣處理設備(Thermal_Wet201039908 VI. Description of the invention: [Technical field to which the invention pertains] The invention is applied to a semi-method. The invention relates to an exhaust gas treatment method, in particular to a vortex exhaust gas processor in a conductor process and an exhaust gas treatment thereof [previous technology] 〇〇 With the vigorous development of the high-tech industry in Taiwan, the semiconductor industry is made more rapid, wherein the semiconductor industry includes Integrated circuit industry. Derived waste liquid, waste water, waste gas, etc. in the process of semiconductor components. The related companies have designed and developed various types of exhaust gas treatment systems for use in Harbin semiconductor factories or liquid crystal display manufacturers. In general, the chemical substances and their by-products commonly used in semi-conducting processes or in liquid crystal display processes can be classified into four types: one-burning test (such as SiH4#), toxic gas (10) such as ASH#, PH3, etc. Corrosive gases (such as HF, HC1, etc.) and, w room effect gases (such as CF4, NF3, etc.). In addition, according to the characteristics of the exhaust gas, it is divided into four treatment modes: water-washing (treatment of water-soluble gas), combustion type (treatment of flammability and pyrolysis-removing gas), adsorption type (exhaust gas corresponding to the treatment of adsorbent materials) and Heated water wash (most waste gases can be treated). Each type of exhaust gas treatment has its advantages and disadvantages and its scope of application. Among them, the heated water-washed waste milk processor is the most widely used treatment method. Since the above four types of gases are harmful to the environment or the human body, they must be prevented from being directly discharged into the atmosphere. Therefore, general semiconductor factories or liquid crystal display manufacturers use a large scrubber central exhaust gas treatment system (Central Scrubber) to treat exhaust gas. According to the characteristics and types of gases derived from each process, the corresponding exhaust gas treatment equipment is selected to effectively solve the problem of exhaust gas in 201039908. And because the working area installed in the manufacturing equipment is mostly away from the central exhaust gas treatment system, the exhaust gas derived from the partial process is often caused by crystallization or dust accumulation in the pipeline due to gas characteristics before being sent to the central exhaust gas treatment system. Blockage and thus lead to gas leakage, and even severely caused an explosion. Therefore, in the work area, it is necessary to configure a small-sized exhaust gas treatment device (Local Scmbber) suitable for process gas characteristics such as the aforementioned four types to reduce the exhaust gas remaining in the work area and ensure the safety of workers.加热 In the conventional technology, heated water exhaust gas treatment equipment (Thermal_Wet

Scrubber)之注水孔(管件)分別配置於内管配件及外管配件 上,配置於内管配件上的注水孔管件容易與半導體製程廢 氣接觸甚至起反應,因此增加了管件的腐钮或損壞機率。 其中製程廢氣出口以及水溶液出口分別位於不同出口,增 加了處理的複雜性,並且水溶液出口位於内管配件的』 部’-旦因氣體特性導致在水溶液出口處產生結晶或粉塵 〇堆積而堵塞管路,將影響整個製程廢氣的後續處理程序。 製程廢氣處理的停擺將嚴重影響(甚至會癱瘓)整個前段生 產線之進行,而造成產品的生產量(thr〇ughp,降低。 有鑑於上述,本發明提出一種新穎的廢氣處理方法, 以避免由於氣體特性所導致在管路中的結晶或粉塵堆積而 造成管路堵塞,更利用欢蓋古< # ^ 用尺幕有效阻隔腐蝕氣體與管壁接 觸,達到順利處理廢氣延長管件壽命之。 【發明内容】 本發明之一目的係在於提供一 风贤種漩渦式廢氣處理器及 201039908 : = ’能夠透過璇渦式水流之嘴麗,可以有效地將 製程廢氣中所生成之懸浮粉末抓取下來。 ::月之#目的係在於提供一種旋渦式廢氣處理器 =其方法’能夠避免懸浮粉末堵塞水溶液或氣體出口之情 形。 依據本發明之一觀點,本發明提供了一種旋渦式廢氣 π之廢氣處理方法,該方法包含:加壓注入液態水於 〇图答Γ件之上開孔以形成第—旋渦式液態水流,利用外 部件之頂部高於㈣f部件之頂部,使得第一旋渴式 2水流溢出内圍管部件之頂部往其管壁流下,結果於内 4件之内管壁上形成第二旋渦式液態水流;以及,加 壓注入液態水於外圍管部件之下開孔,使得内圍管部件側 壁上之數個噴麗頭得以嘴讓出均勻之水霧,加速與廢氣之 反應’並達降溫之目的。 :第一、第二璇渦式液態水流係基於内圍管部件與 〇外圍&部件之間的空間為圓環狀空間而自然產生旋渦式的 水流。其中數個喷灌頭與下開孔之中心約略同高。旋渴式 ^氣處理器包含内圍管部件、外圍管部件、固定座、橫隔 β件以及保護塾。其中加壓注人液態水於外圍管部件之下 開孔,注入液態水於橫隔部件以下固定座以上之圓環狀空 間。,隔部件係關該上開孔及下開孔。保護墊係配置於 卜圍管。卩件之頂端,並從頂端延伸至低於内圍管部件之頂 邛。外圍管部件配置於該固定座之上。 【實施方式】 6 201039908 本發明將配合其較佳實施例與隨附之圖式詳述於下。 應可理解者為本發明中所有之較佳實施例僅為例示之用, 並非用已限制本發明。因此除文中之較佳實施例外,本發 明亦可廣泛地應用在其它實施例中。且本發明並不受限於 任何實施例,應以隨附之申請專利範圍及其同等領域而定。 一般半導體元件或液晶顯示器之製程期間均會衍生出 廢氣,而在廢氣輸送至中央廢氣處理系統之前,通常會經 過廢氣管路加熱裝置(inlet line heater)將廢氣加熱,其可採 ®前段熱電耦高溫加熱,使半導體製程廢氣氧化,例如將氣 體加熱至500〜850°C以破壞(分解)石夕甲烧(silane),其中溫 室效應氣體屬於全氟化合物(PFC),需要溫度至少達 1100°C以上才能破壞其堅固的鍵結,而CF4更需溫度至少 達1400°C才能破壞其堅固的鍵結。然後’經過加熱水洗轉 變階段(thermal/wet transition),再進入洗務式廢氣處理器 (Water Scrubber)以移除氣體流中的粒子(particles)。在本發 ❹明進一步改良了中洗滌式廢氣處理器以及其處理方法。本 發明係利用漩渦式廢氣處理器以造成旋渦式的強壓水流’ 以有效地處理製程廢氣,並且避免了習知技術中因為結晶 或粉塵堆積而堵塞管路的情況。因此’本發明之旋滿式廢 氣處理器以及其處理方法確實比習知技術更進一步’為習 知技術所無法比擬者,並且有效地提升處理效率。。 參照第一圖,其係本發明之漩渦式廢氣處理器 (Vortex Exhaust Gas Processor)之刻面示意圖。旋滿式廢 氣處理器之俯視圖請參考第二圖。如圖所示,本發明之旋 7 201039908 渦式廢氣處理器100包含一内圍管部件101、一外圍管部 件102、固定座103、橫隔部件1〇4及保護墊1〇5,其中内 圍e部件101係圓環狀空腔(ring cavity)主體,為旋渦式 廢氣處理器100之中心主體,其内直徑1〇la及外直徑i〇ib 分別為102及114(公釐)。固定座103為圓盤狀,其厚度 l〇3b可為20(公爱),&含複數個開孔(洞),包含複數個開 孔(洞),透過這些開孔使得廢氣處理器1〇〇得以固定於後 ❹續處理裝置之上,例如水平式廢氣處理器(h〇H繼⑷贿打 scrubber),其中水溶解氣體及懸浮粒子得以從後續處理器 内之氣體流中被帶走。外圍管料1G2係為圓環狀空腔 體固定於固定座103之上,並且外圍管部件1〇2環繞内 圍管部件101使得二者之間留有一作用空間。換言之,内 圍管部件1G1與㈣管部件1G2為空腔待不同之圓環狀 空腔體,外圍管部件之直徑大於内圍管部件之直徑,並且 其間之空間為圓環狀空間。外圍管部件1〇2之長度Μ。 ❹為129(公餐)’外圍管部件1〇2之頂部至内圍管部^牛ι〇ι 底部之長度102c為237(公髮),固定座1〇3底部至内圍管 4件101底部之長度1〇2b為88(公釐)。外圍管部件102 具有一環狀凹槽108(位於上方)以方便攜帶、拿取或安裝 等。橫隔部件104配置、連接並固定於内圍管部件ι〇ι ^ 外圍管部件102之間,以將外圍管部件1〇2與内圍管部件 1〇1之間的空間分隔為上下二個區域 括數個開孔(洞),其中開請位於上述二個::= 域,而開孔1〇7位於上述二個區域之下區域。橫隔部件1〇4 201039908 隔開了開孔106及開孔l〇7。開孔1〇6中心與開孔1〇7中 心之間的距離l〇6a為68(公釐)。内圍管部件1〇1包括數個 喷灑頭(spray nozzles)109配置於管壁上,喷灑頭1〇9可以 配置於上述二個區域之下區域與開孔1〇7之中心約略同高 之處。外圍管部件1 〇2之頂部高於内圍管部件 101之頂部。 在一較佳實施例中,保護墊1〇5之材質例如為鐵氟龍 (Teflon)墊圈,配置於外圍管部件1〇2之頂端,並從頂端延 〇伸至低於内圍管部件(内管)1〇1之頂部,利用流動的水來保 護旋渦式廢氣處理器之材質以避免直接觸高腐蝕性的製 程廢氣與其參與反應,進而可使其管件壽命延長。漩渦 式廢氣處理器可以利用上述各部件之構造而以一體成形 之方式構成,或者是透過各個部件分別連接、固定而形成, 其中每個部件之尺寸可視實際應用作改變或調整。 參照第三圖,其係本發明之另一實施例之漩渦式廢 氣處理器之剖面示意圖。漩渦式廢氣處理器之俯視圖請 ❹參考第四圖。如圖所示,本發明之旋渦式廢氣處理器2〇〇 包含一内圍管部件201、一外圍管部件2〇2、固定座2〇3、 杈隔部件204及保護墊205,其中内圍管部件2〇1係圓環 狀空腔主體,為漩渦式廢氣處理器2〇〇之中心主體,其 内直徑20U及外直徑201b分別為1〇2及114(公釐)。固定 座203為圓盤狀,其厚度2〇3b可為2〇(公釐),包含複數個 開孔(洞),透過這些開孔使得旋渦式廢氣處理器2〇〇得以 固定於後續處理裝置之上。外圍管部件2〇2係為圓環狀空 腔體固疋於固疋座203之上,並且外圍管部件202環繞 201039908 内圍管部件201使得二者之間留有一作用空間。外圍管部 件202之長度202&為192(公釐),外圍管部件2〇2之頂部 至内圍管部件201底部之長度2〇2c為237(公釐),固定座 2〇3底部至内圍管部件2〇1底部之長度2〇几為25(公釐)。 本實施例之固定座203較接近内圍管部件2〇1之底部。外 圍管部件202具有-環狀凹# 2〇8(位於上方)以方便攜 帶、拿取或安裝等。橫隔部件204配置、連接並固定於内 圍管部件201及外圍管部件2〇2之間,以將外圍管部件2〇2 與内圍管部件201之間的空間分隔為上下二個區域。外圍 管口P件202包括至少數個開孔(洞),其中開孔位於上 述二個區域之上區域,而開孔2〇7位於上述二個區域之下 區域。橫隔部件204隔開了開孔2〇6及開孔2〇7。開孔2〇6 中心與開孔207中心之間的距離2〇6a為7〇(公爱)。内圍管 部件201包括數個喷灑頭(洞)2〇9配置於管壁上,喷灑頭 209可以配置於上述二個區域之下區域與開孔2〇7之中心 ❹約略同高之處。保護墊205配置為從頂端延伸至低於内圍 管部件201之頂部。 本發明之璇渦式廢氣處理器之廢氣處理方法包括,注 入液態水於旋渦式廢氣處理器之外圍管部件1〇2(2〇2)之上 開孔106(206) ’利用注入上開孔1〇6(2〇6)之水壓使得注入 的水在上流,基於外圍管部件1〇2(2〇2)之頂部高於内圍管 部件1〇1(2〇1)之頂部,由於強大的水壓將使得注入的水溢 出内圍管部件1〇1(2〇1)之頂部而往其管壁流下。由於内圍 管部件與外圍管部件之間的空間為圓環狀空間,強大的水 201039908 麼於上區域之圓環狀空間會使水流形成渦流,而溢出内圍 管部件之水流亦隨之而自然產生旋渦式的水流,使得旋渴 式的水流於製程廢氣管路的管壁(即内圍管部件)生成,如 此可避免廢氣管路直接接觸尚腐触性或其他種類的製程廢 氣’阻斷廢氣與其參與反應進而造成腐蝕管壁,可使管路 (漩渦式廢氣處理器)延長預防保養(prevent Maintenanee : PM)時間以及使用壽命。避免氣體物質形成的粉末 於管壁沈積,保持氣流順暢,增加機台使用率。 Ο 接下來,注入液態水於璇渦式廢氣處理器之外圍管部 件102(202)之下開孔1〇7(207),利用注入下開孔1〇7(2〇7) 之水壓使得注入的水環繞於橫隔部件1〇4(2〇4)以下固定座 103(203)以上之圓環狀空間,由於強大的水壓將使得注入 的水快速地流進開孔1〇7(2〇7)之内。由於内圍管部件與外 圍管部件之間的空間為圓環狀空間,在一實施例中,強大 的水壓於下區域之圓環狀空間會使水流形成渦流,使得内 〇圍管部件101(201)側壁上之數個喷灑頭1〇9(2〇9)以漩渦式 的方式喷灑出,喷灑頭109(209)配置於管壁上,噴灑頭2〇9 配置於下區域與開孔207之中心約略同高之處。在另一實 施例中,數個喷灑頭109(2〇9)直接噴灑出均勻之水霧,加 速與廢氣之反應,如此有助於整體降溫功能,例如可以從 350°C降到60°C〜8(TC於40公分的管路中,並使後方連結 之零件(例如水平式廢氣處理器)所需之耐溫級數降低,並 進步達到安全及節省成本(cost down)之目的。此外,喷 麗頭109(209)以旋渦式的方式喷)麗出的水可以衝擊粉末狀 11 201039908 粒子,進一步可以有效地將製程廢氣中所生成之懸浮粉末 抓取下來,以利後續處理。再者,喷灑頭1〇9(2〇9)以漩渦 式的方式喷灑出的水可以與製程廢氣預先反應 (Pre-reaction with waste gas)而增加廢棄處理之效率 (DRE)。 從上述可知本發明之漩渦式廢氣處理器中,廢氣處理 設備(Scmbber)之喷灑頭係透過漩渦式水流之喷灑,可以有 〇效地將製程廢氣中所生成之懸浮粉末抓取下來,習知技術 喷灑頭之直線喷灑方式容易讓懸浮粉末留在其上;内圍管 部件係為圓環狀空腔體,其沒有底部,因此不會有如習知 技術之懸浮粉末堵塞水溶液出口之情形;再者,增加了一 個固定座,使得整體廢氣處理器更穩固,並且容易與後方 之零件連結 ' 上述敘述係本發明之較佳實施例。此領域之技藝者應 得以領會其係用以說明本發明而非用以限定本發明所主張 ❹之專利權利範圍。其專利保護範圍當視後附之申請專利範 圍及其同等領域而定。凡熟悉此領域之技藝者,在不脫離 本專利精神範圍内,所作之更動或潤飾,均屬於本發明所 揭示精神下所完成之等效改變或設計,且應包含在下述之 申請專利範圍内。 【圖式簡單說明】 本發明可藉由說明書中若干較佳實施例及詳細敘述以 及後附圖式得以瞭解。然而,此領域之技藝者應得以領會 所有本發明之較佳實施例係用以說明而非用以限制本發明 12 201039908 之申請專利範圍,其中: 器之 器之 器之 第一圖係本發明之第-實施例之旋渦式廢氣處理 剖面示意圖。 、第-圖係本發明之第一實施例之旋渦式廢氣處理 俯視不意圖。 第二圖係本發明之第二實_之義式廢氣處理 剖面示意圖。 第四圖係本發明之第二實施例之旋渦式廢氣處理器之 俯視不意圖。 【主要元、件符號說明】 叔渴式廢氣處理器1〇〇、200 内圍管部件101、2〇1 外圍管部件102、2〇2 固定座103、203 橫隔部件104、204 保護墊105、205 内直徑l〇la、201a 外直徑l〇lb、201b 外圍管部件之長度102a、202a 外圍管部件之頂部至内圍管部件底部之長度1〇2c、 202c 固定座底部至内圍管部件底部之長度1〇2b、2〇2b 固定座厚度l〇3b、203b 開孔 106、206 13 201039908 開孔106中心與開孔107中心之間的距離106a 開孔206中心與開孔207中心之間的距離206a 開孔 107、207 環狀凹槽108、208 喷灑頭(spray nozzles)109、209The water injection hole (pipe fitting) of Scrubber) is respectively disposed on the inner pipe fitting and the outer pipe fitting, and the water injection hole pipe fitting disposed on the inner pipe fitting is easy to contact or even react with the semiconductor process exhaust gas, thereby increasing the corrosion resistance of the pipe fitting or the damage probability. . Wherein the process exhaust gas outlet and the aqueous solution outlet are respectively located at different outlets, which increases the complexity of the treatment, and the aqueous solution outlet is located at the "portion" of the inner pipe fitting - the gas is generated at the outlet of the aqueous solution due to gas characteristics, and the pipeline is blocked. Will affect the subsequent processing of the entire process exhaust. The shutdown of the process exhaust gas treatment will seriously affect (or even smash) the entire front-end production line, resulting in the production of the product (thr〇ughp, lower. In view of the above, the present invention proposes a novel exhaust gas treatment method to avoid gas The characteristics cause the crystallization or dust accumulation in the pipeline to cause blockage of the pipeline, and the use of the cherished ancient <# ^ with the ruler effectively blocks the contact of the corrosive gas with the pipe wall to achieve smooth treatment of the exhaust gas to extend the life of the pipe. Contents One of the objects of the present invention is to provide a wind vortex exhaust gas processor and 201039908: = 'capable of pulsating water flowing through the mouth, can effectively capture the suspended powder generated in the process exhaust gas. The purpose of the present invention is to provide a vortex exhaust gas processor=the method thereof>to prevent the suspended powder from clogging the aqueous solution or the gas outlet. According to one aspect of the present invention, the present invention provides a vortex exhaust gas π exhaust gas treatment. The method comprises: injecting liquid water under pressure to open a hole above the drawing member to form a first-vortex type The flow of water, using the top of the outer member above the top of the (four)f component, causes the first thirst 2 water to overflow the top of the inner tubular member to flow down its wall, resulting in a second vortex on the inner wall of the inner four a liquid water flow; and a pressurized injection of liquid water to open a hole under the peripheral pipe member, so that a plurality of spray heads on the side wall of the inner pipe member allow the nozzle to give a uniform water mist, accelerating the reaction with the exhaust gas The purpose of cooling: The first and second vortex liquid water flow systems naturally generate a vortex-like water flow based on the space between the inner circumferential pipe member and the outer periphery and the outer part of the crucible. Several sprinkler heads and The center of the lower opening is approximately the same height. The rotary thirst gas processor comprises an inner tubular component, a peripheral tubular component, a fixed seat, a diaphragm β and a protective cymbal. The pressurized liquid water is injected under the peripheral tubular component. Opening the hole, injecting liquid water into the annular space above the spacer below the spacer member. The partition member closes the upper opening and the lower opening. The protective pad is disposed on the top of the tube. The top end extends below the inner tube The top of the device is disposed on the fixed seat. [Embodiment] 6 201039908 The present invention will be described in detail with reference to the preferred embodiments and the accompanying drawings. The preferred embodiments are merely illustrative and are not intended to limit the invention. Therefore, the invention may be applied to other embodiments in addition to the preferred embodiments, and the invention is not limited to any The embodiments should be based on the scope of the accompanying patent application and its equivalent fields. Generally, exhaust gas is derived during the process of semiconductor components or liquid crystal displays, and usually passes through the exhaust gas before the exhaust gas is sent to the central exhaust gas treatment system. The inlet line heater heats the exhaust gas, and the high temperature heating of the front stage thermocouple can be used to oxidize the semiconductor process exhaust gas, for example, heating the gas to 500 to 850 ° C to destroy (decompose) the silane. The greenhouse gas is a perfluorinated compound (PFC), which requires a temperature of at least 1100 ° C to destroy its strong bond, while CF 4 requires a temperature of at least 1400 °. C can destroy its strong bond. Then, the thermal/wet transition is followed by a Water Scrubber to remove particles from the gas stream. The intermediate scrubbing exhaust gas processor and its processing method are further improved in the present invention. The present invention utilizes a vortex exhaust gas processor to create a vortex-type intense pressurized water stream to effectively treat process exhaust gases and avoids the clogging of pipelines by crystallization or dust accumulation in the prior art. Therefore, the rotary full-type exhaust gas processor of the present invention and the processing method thereof are indeed further than those of the prior art, and are unmatched by the conventional technology, and the processing efficiency is effectively improved. . Referring to the first figure, it is a schematic illustration of the facet of the Vortex Exhaust Gas Processor of the present invention. Please refer to the second figure for the top view of the full-scale exhaust gas processor. As shown, the vortex exhaust gas processor 100 of the present invention includes an inner tubular member 101, a peripheral tubular member 102, a fixed seat 103, a cross member 1〇4, and a protective mat 1〇5, wherein The en-e-member 101 is a ring cavity main body which is a central body of the vortex exhaust gas processor 100, and has an inner diameter 1 〇 la and an outer diameter i 〇 ib of 102 and 114 (m), respectively. The fixing base 103 has a disc shape, and the thickness l〇3b can be 20 (public), and the plurality of openings (holes) include a plurality of openings (holes) through which the exhaust gas processor 1 is caused. The crucible can be fixed on the subsequent processing device, such as a horizontal exhaust gas processor (h〇H (4) bribe scrubber), in which the water dissolved gas and suspended particles are taken away from the gas stream in the subsequent processor. . The peripheral tube 1G2 is an annular cavity fixed to the holder 103, and the peripheral tube member 1〇2 surrounds the inner tube member 101 so that a space is left between the two. In other words, the inner tube member 1G1 and the (iv) tube member 1G2 are annular cavities to be different from each other, and the diameter of the peripheral tube member is larger than the diameter of the inner tube member, and the space therebetween is an annular space. The length of the peripheral tube member 1〇2 is Μ. ❹ is 129 (public meal) 'the top of the outer tube part 1〇2 to the inner circumference tube part ^牛ι〇ι The length of the bottom 102c is 237 (male), the bottom of the fixed seat 1〇3 to the inner tube 4 pieces 101 The length of the bottom is 1 〇 2b is 88 (millimeters). The peripheral tube member 102 has an annular groove 108 (located above) for easy carrying, handling or mounting. The diaphragm member 104 is disposed, connected, and fixed between the inner peripheral pipe members ι 〇 ^ 外围 , , , , , , , , , , , , , , , , , , ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The area includes a plurality of openings (holes), wherein the openings are located in the above two::= domains, and the openings 1〇7 are located in the area below the two regions. The diaphragm member 1〇4 201039908 separates the opening 106 and the opening l〇7. The distance l〇6a between the center of the opening 1〇6 and the center of the opening 1〇7 is 68 (mm). The inner tubular member 1〇1 includes a plurality of spray nozzles 109 disposed on the pipe wall, and the sprinkler heads 1〇9 may be disposed under the two regions below and approximately the same as the center of the openings 1〇7 High place. The top of the peripheral tube member 1 〇 2 is higher than the top of the inner peripheral tube member 101. In a preferred embodiment, the material of the protective pad 1〇5 is, for example, a Teflon washer disposed at the top end of the peripheral tube member 1〇2 and extending from the top end to the lower inner tube member ( The inner tube) is at the top of the 1〇1, and the flowing water is used to protect the material of the vortex exhaust gas processor to avoid direct contact with the highly corrosive process waste gas and its participation reaction, thereby prolonging the life of the pipe. The vortex type exhaust gas processor may be integrally formed by the configuration of each of the above components, or may be formed by being connected and fixed by respective members, wherein the size of each member may be changed or adjusted depending on the actual application. Referring to the third drawing, it is a schematic cross-sectional view of a vortex exhaust gas processor according to another embodiment of the present invention. For a top view of the vortex exhaust gas processor, please refer to the fourth figure. As shown, the vortex exhaust gas treatment unit 2 of the present invention comprises an inner tubular member 201, a peripheral tubular member 2〇2, a fixed seat 2〇3, a spacer member 204 and a protective pad 205, wherein the inner circumference The pipe member 2〇1 is an annular cavity main body, which is a central body of the vortex exhaust gas processor 2, and has an inner diameter 20U and an outer diameter 201b of 1〇2 and 114 (millimeter), respectively. The fixing base 203 has a disk shape and has a thickness of 2〇3b of 2〇 (mm), and includes a plurality of openings (holes) through which the vortex exhaust gas processor 2〇〇 is fixed to the subsequent processing device. Above. The peripheral tube member 2〇2 is an annular cavity that is fixed to the holder 203, and the peripheral tube member 202 surrounds the inner tube member 201 of 201039908 so as to leave a space between them. The length 202& of the peripheral tube member 202 is 192 (millimeter), and the length from the top of the peripheral tube member 2〇2 to the bottom of the inner peripheral tube member 201 is 237 (mm), and the bottom of the holder 2〇3 is inside. The length of the bottom of the trunk member 2〇1 is 2 (25 mm). The fixing seat 203 of this embodiment is closer to the bottom of the inner circumferential pipe member 2〇1. The outer tubular member 202 has a ring-shaped recess #2〇8 (located above) for carrying, taking or mounting. The diaphragm member 204 is disposed, connected, and fixed between the inner tube member 201 and the peripheral tube member 2〇2 to partition the space between the peripheral tube member 2〇2 and the inner peripheral tube member 201 into upper and lower regions. The peripheral nozzle P member 202 includes at least a plurality of openings (holes) in which the openings are located in the upper region of the two regions, and the openings 2〇7 are located in the region below the two regions. The diaphragm member 204 separates the opening 2〇6 and the opening 2〇7. The distance between the center of the opening 2〇6 and the center of the opening 207 is 2〇6a is 7〇 (public interest). The inner tubular member 201 includes a plurality of sprinklers (holes) 2〇9 disposed on the pipe wall, and the sprinkler head 209 can be disposed under the two regions below the center of the opening 2〇7 At the office. The protective pad 205 is configured to extend from the top end to be lower than the top of the inner shroud component 201. The exhaust gas treatment method of the vortex exhaust gas processor of the present invention comprises: injecting liquid water into the opening pipe 106 (206) of the peripheral pipe member 1〇2 (2〇2) of the vortex exhaust gas processor. The water pressure of 1〇6 (2〇6) causes the injected water to flow upward, based on the top of the peripheral pipe member 1〇2 (2〇2) being higher than the top of the inner pipe member 1〇1 (2〇1) due to The strong water pressure will cause the injected water to overflow the top of the inner pipe member 1〇1 (2〇1) and flow down to the pipe wall. Since the space between the inner tube member and the peripheral tube member is an annular space, the powerful water 201039908 in the upper annular space causes the water flow to form a vortex, and the water overflowing the inner tube member is also followed. Naturally, a vortex-type water flow is generated, so that the thirst-type water is generated in the pipe wall of the process exhaust pipe (ie, the inner pipe component), so that the exhaust pipe can be prevented from directly contacting the corrosion resistance or other kinds of process exhaust gas. The exhaust gas reacts with it to cause corrosion of the pipe wall, which allows the pipeline (vortex exhaust gas processor) to extend preventive maintenance (preventive time) and service life. The powder formed by avoiding gas substances is deposited on the pipe wall to keep the airflow smooth and increase the use rate of the machine. Ο Next, liquid water is injected into the opening 1〇7 (207) under the peripheral tube member 102 (202) of the vortex exhaust gas processor, and the water pressure is injected by the lower opening 1〇7 (2〇7). The injected water surrounds the annular space above the spacer 103 (2) below the spacer member 1〇4 (2〇4), and the injected water rapidly flows into the opening 1〇7 due to the strong water pressure ( Within 2〇7). Since the space between the inner tubular member and the peripheral tubular member is an annular space, in an embodiment, a strong water pressure in the annular space of the lower region causes the water flow to form a vortex, so that the inner tubular member 101 (201) Several sprinkler heads 1〇9 (2〇9) on the side wall are sprayed in a swirling manner, the sprinkler head 109 (209) is disposed on the pipe wall, and the sprinkler head 2〇9 is disposed in the lower region. It is approximately the same height as the center of the opening 207. In another embodiment, a plurality of sprinkler heads 109 (2〇9) directly spray a uniform water mist to accelerate the reaction with the exhaust gas, thus contributing to the overall cooling function, for example, from 350 ° C to 60 ° C ~ 8 (TC in the 40 cm pipeline, and the number of temperature resistance required for the components connected to the rear (such as the horizontal exhaust gas processor) is reduced, and the safety and cost reduction is improved. In addition, the spray head 109 (209) is sprayed in a vortex manner, and the water can be impacted on the powder 11 201039908 particles, and the suspended powder generated in the process exhaust gas can be effectively grabbed for subsequent processing. Furthermore, the water sprayed by the sprinkler head 1〇9 (2〇9) in a vortex manner can be pre-reaction with waste gas to increase the efficiency of disposal (DRE). It can be seen from the above that in the vortex type exhaust gas processor of the present invention, the sprinkler head of the exhaust gas treating device (Scmbber) can effectively remove the suspended powder generated in the process exhaust gas by spraying the vortex water flow. The linear spraying method of the prior art sprinkler head easily leaves the suspended powder on it; the inner peripheral pipe member is an annular cavity body which has no bottom portion, so that there is no suspended powder clogging aqueous solution outlet as in the prior art. In addition, a fixed seat is added to make the overall exhaust gas processor more stable and easy to connect with the rear parts. The above description is a preferred embodiment of the present invention. Those skilled in the art will appreciate that the invention is not intended to limit the scope of the invention as claimed. The scope of patent protection depends on the scope of the patent application and its equivalent fields. Any changes or modifications made by those skilled in the art without departing from the spirit of the invention are within the scope of the invention disclosed herein. . BRIEF DESCRIPTION OF THE DRAWINGS The invention can be understood by the following description of the preferred embodiments and the detailed description and the accompanying drawings. However, those skilled in the art should understand that the preferred embodiments of the present invention are intended to be illustrative and not to limit the scope of the patent application of the present invention. A cross-sectional view of the vortex exhaust gas treatment of the first embodiment. The first embodiment is a vortex type exhaust gas treatment of the first embodiment of the present invention. The second drawing is a schematic cross-sectional view of the second embodiment of the present invention. The fourth drawing is a plan view of the vortex type exhaust gas exhaustor of the second embodiment of the present invention. [Main element and part symbol description] Uncle thirst exhaust gas processor 1〇〇, 200 inner pipe member 101, 2〇1 peripheral pipe member 102, 2〇2 fixing seat 103, 203 diaphragm member 104, 204 protection pad 105 205 inner diameter l〇la, 201a outer diameter l〇lb, 201b length of the peripheral pipe member 102a, 202a the length of the peripheral pipe member to the bottom of the inner pipe member 1〇2c, 202c the bottom of the fixed seat to the inner pipe member The length of the bottom is 1〇2b, 2〇2b, the thickness of the fixed seat l〇3b, 203b, the opening 106, 206 13 201039908 The distance 106 between the center of the opening 106 and the center of the opening 107a between the center of the opening 206 and the center of the opening 207 Distance 206a opening 107, 207 annular groove 108, 208 sprinkler heads 109, 209

1414

Claims (1)

201039908 七、申請專利範圍·· 1. -種㈣式廢氣處理H之廢氣處理方法,該方法包含: 加壓注入液態水於外圍管部件之上開孔以形成第一旋 渦式液態水流,利㈣外圍管部件之頂部高於該内圍管 部件之頂部,使得該第式液態水流溢出該内圍管 部件之頂部’於該内圍管部件之内管壁上形成第二旋渦 式液態水流;以及 加壓〉主入液態水於該外圍管部件之下開孔,使得該内圍 。管部件側壁上之數個噴灑頭得以噴·出均句之水霧,加 速與廢氣之反應,並達降溫之目的。 2·如請求項1所述之旋渦式廢氣處理器之廢氣處理方 法,其中該第一漩渦式液態水流係基於該内圍管部件與 該外圍管部件之間的空間為圓環狀空間而自然產生漩 渦式的水流。 3. 如清求項1所述之漩渦式廢氣處理器之廢氣處理方 法,其中該第二漩渦式液態水流係基於該内圍管部件與 該外圍管部件之間的空間為圓環狀空間而自然產生漩 渦式的水流。 4. 如睛求項丨所述之旋渦式廢氣處理器之廢氣處理方 法’其中該數個喷灑頭與該下開孔之中心約略同高。 15 201039908 5. 如請求項1所述之旋渴式廢氣處理器之廢氣處理方 法,其中該漩渦式廢氣處理器包含該内圍管部件、該外 圍管部件、一固定座以及一橫隔部件。 6. 如請求項5所述之漩渦式廢氣處理器之廢氣處理方 法’其中該加壓 >主入液態水於該外圍管部件之上開孔係 注入該液態水於該橫隔部件以上之圓環狀空間。 ® 7.如請求項5所述之漩渦式廢氣處理器之廢氣處理方 法,其中該加壓注入液態水於該外圍管部件之下開孔係 注入該液態水於該橫隔部件以下該固定座以上之圓環 狀空間。 8·如請求項5所述之旋渦式廢氣處理器之廢氣處理方 法’其中該橫隔部件係隔開該上開孔及下開孔。 〇 9.如請求項5所述之旋渦式廢氣處理器之廢氣處理方 法,其中該漩渦式廢氣處理器更包含保護墊配置於該外 圍g、。卩件之頂端,並從該頂端延伸至低於該内圍管部 之頂部。 10:請求項9所述之漩渦式廢氣處理器之廢氣處理方 '’其中該保護墊之材質為鐵氟龍。 201039908 ιι·如請求項5所述之旋渦式廢氣處理器之廢氣處理方 法’其中該外圍管部件配置於該固定座之上。 12.如請求項}所述之旋渦式廢氣處理器之廢氣處理方 法其中該内圍管部件與該外圍管部件為空腔半徑不同 之圓環狀空腔體。 13.—種漩渦式廢氣處理器之廢氣處理方法,該方法包含: 加壓注入液態水於外圍管部件之上開孔以形成第一漩 滿式液態水流,顧該外圍管部件之頂部高於該内圍管 I5件之頂部,使得該第一旋渦式液態水流溢出該内圍管 部件之頂部;以及 加壓注入液態水於該外圍管部件之下開孔以形成第二 漩,式液態水流,使得該内圍管部件側壁上之數個喷灑 頭得以噴灑出該第二漩渦式液態水流。201039908 VII. Scope of application for patents·· 1. - (4) Exhaust gas treatment method for exhaust gas treatment H, the method comprises: pressurizing and injecting liquid water to open a hole in a peripheral pipe member to form a first vortex liquid water flow, (4) The top of the peripheral tubular member is higher than the top of the inner tubular member such that the first liquid water overflows the top of the inner tubular member to form a second vortex liquid water flow on the inner tubular wall of the inner tubular member; Pressurization > primary liquid water is opened under the peripheral tube member to make the inner circumference. A plurality of sprinkler heads on the side wall of the pipe member are sprayed with the water mist of the uniform sentence, and the reaction speed is accelerated with the exhaust gas, and the purpose of cooling is achieved. 2. The method of treating an exhaust gas of a vortex exhaust gas processor according to claim 1, wherein the first vortex liquid water flow is based on a space between the inner circumferential pipe member and the peripheral pipe member, and is naturally Produces a swirling water flow. 3. The method of treating an exhaust gas of a vortex exhaust gas processor according to claim 1, wherein the second vortex liquid water flow is based on a space between the inner tubular member and the peripheral tubular member being an annular space. Naturally, a swirling water flow is produced. 4. The exhaust gas treatment method of the vortex exhaust gas processor of the present invention, wherein the plurality of shower heads are approximately the same height as the center of the lower opening. The method of treating a waste gas of a thirst exhaust gas processor according to claim 1, wherein the vortex exhaust gas exhaustor comprises the inner tubular member, the outer tubular member, a fixed seat, and a cross member. 6. The exhaust gas treatment method of the vortex exhaust gas processor of claim 5, wherein the pressurization > main liquid water is perforated over the peripheral pipe member to inject the liquid water above the cross member Ring space. The method of treating an exhaust gas of a vortex exhaust gas processor according to claim 5, wherein the pressurized injection liquid water is opened under the peripheral pipe member to inject the liquid water below the traverse member. The above ring-shaped space. 8. The exhaust gas treatment method of a vortex exhaust gas processor according to claim 5, wherein the diaphragm member separates the upper opening and the lower opening. The exhaust gas treatment method of the vortex exhaust gas processor of claim 5, wherein the vortex exhaust gas processor further comprises a protective mat disposed on the outer periphery g. The top end of the jaw extends from the top to a lower portion than the inner tubular portion. 10: The exhaust gas treatment unit of the vortex exhaust gas processor of claim 9 wherein the protective pad is made of Teflon. 201039908 ιι. The exhaust gas treatment method of the vortex exhaust gas processor of claim 5, wherein the peripheral pipe member is disposed above the fixed seat. 12. The exhaust gas treatment method of a vortex exhaust gas processor according to claim 1, wherein the inner tubular member and the peripheral tubular member are annular cavities having different cavity radii. 13. An exhaust gas treatment method for a vortex exhaust gas processor, the method comprising: injecting liquid water into a hole above a peripheral tube member to form a first swirling liquid water flow, wherein a top portion of the peripheral tube member is higher than The top of the inner tube I5 is such that the first vortex liquid water overflows the top of the inner tubular member; and the pressurized liquid water is injected under the peripheral tube member to form a second swirling liquid water flow The plurality of sprinkler heads on the side wall of the inner tubular member are sprayed out of the second swirling liquid water stream. 如明求項13所述之旋渦式廢氣處理器之廢氣處理 法’其中該第-旋涡式液態水流係基於該内圍管部件 該外園管部件之間的空間為圓環狀空間而自然產生: 渦式的水流。 明求項13所述之旋渴式廢氣處理器之廢氣處理方 社’其中該第二璇渦式液態水流係基於該内圍管部件與 i卜圍管部件之間的空間為圓環狀空間而自然產生漩 201039908 渦式的水流。 16.如請求項13所述之漩渦式廢氣處理器之廢氣處理方 法’其中該數個喷灑頭與該下開孔之中心約略同高。 Π.如請求項13所述之旋渦式廢氣處理器之廢氣處理方 法,其中該旋渦式廢氣處理器包含該内圍管部件、該外 圍管部件、一固定座以及一橫隔部件。 0 18, 如請求項17所述之旋渦式廢氣處理器之廢氣處理方 法,其中該加壓注入液態水於該外圍管部件之上開孔係 注入該液態水於該松隔部件以上之圓環狀空間。 19. 如凊求項17所述之旋渦式廢氣處理器之廢氣處理方 法,其中該加壓注入液態水於該外圍管部件之下開孔係 ❹ 注入該液態水於該橫隔部件以下該固定座以上之圓環 狀空間。 2〇.如請求項17所述之_式廢氣處理器之廢氣處理方 法’其中該橫隔部件係隔開該上開孔及下開孔。 21.如請求項17所述之旋渦式廢氣處理器之廢氣處理方 法其中該旋渦式廢氣處理器更包含保護墊配置於該外 圍s。卩件之頂端,並從該頂端延伸至低於該内圍管部件 201039908 之頂部。 22. 如請求項21所述之旋渦式廢氣處理器之廢氣處理方 法’其中該保護墊之材質為鐵氟龍。 23. 如請求項I?所述之漩渦式廢氣處理器之廢氣處理方 法’其中該外圍管部件配置於該固定座之上。 〇 24.如請求項13所述之璇渦式廢氣處理器之廢氣處理方 法,其中該内圍管部件與該外圍管部件為空腔半徑不同 之圓環狀空腔體。 ❹ 19The exhaust gas treatment method of the vortex exhaust gas processor according to Item 13, wherein the first vortex liquid water flow is naturally generated based on a space between the outer tubular member of the inner tubular member and an annular space; Vortex water flow. The exhaust gas treatment system of the thirst-type exhaust gas processor of the present invention, wherein the second vortex liquid water flow system is based on a space between the inner circumferential pipe member and the i-circumferential pipe member is an annular space Naturally, the swirling current of the 201039908 vortex is generated. 16. The exhaust gas treatment method of the vortex exhaust gas processor of claim 13, wherein the plurality of showerheads are approximately the same height as the center of the lower opening. The exhaust gas treatment method of the vortex exhaust gas processor of claim 13, wherein the vortex exhaust gas exhaustor comprises the inner peripheral pipe member, the outer tubular member, a fixed seat, and a cross member. The method of treating an exhaust gas of a vortex exhaust gas processor according to claim 17, wherein the pressurized injection liquid water is perforated in the peripheral pipe member to inject the liquid water into the ring above the loose component Space. 19. The method of treating an exhaust gas of a vortex exhaust gas processor according to claim 17, wherein the pressurized injection liquid water is opened under the peripheral pipe member, and the liquid water is injected under the traverse member. A ring-shaped space above the seat. An exhaust gas treatment method of the exhaust gas processor of the invention of claim 17, wherein the diaphragm member separates the upper opening and the lower opening. 21. The exhaust gas treatment method of a vortex exhaust gas processor according to claim 17, wherein the vortex exhaust gas processor further comprises a protective mat disposed on the outer periphery s. The top end of the jaw member extends from the top end to a lower portion than the inner circumferential tube member 201039908. 22. The exhaust gas treatment method of the vortex exhaust gas processor according to claim 21, wherein the protective pad is made of Teflon. 23. The exhaust gas treatment method of the vortex exhaust gas processor of claim 1 wherein the peripheral tube member is disposed above the mount. The method of treating an exhaust gas of a vortex exhaust gas processor according to claim 13, wherein the inner tubular member and the peripheral tubular member are annular cavities having different cavity radii. ❹ 19
TW98115863A 2009-05-13 2009-05-13 Vortex exhaust gas processor and method of the same TWI361100B (en)

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