TWI738445B - 半導體封裝結構 - Google Patents

半導體封裝結構 Download PDF

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TWI738445B
TWI738445B TW109126066A TW109126066A TWI738445B TW I738445 B TWI738445 B TW I738445B TW 109126066 A TW109126066 A TW 109126066A TW 109126066 A TW109126066 A TW 109126066A TW I738445 B TWI738445 B TW I738445B
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semiconductor
semiconductor package
electrical connector
insulating substrate
redistribution layer
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TW109126066A
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TW202107646A (zh
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齊彥堯
劉乃瑋
林子閎
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聯發科技股份有限公司
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Abstract

本發明公開一種半導體封裝結構，包括：天線裝置，包括：導電圖案層，包括第一天線元件，形成在絕緣基板中並且鄰近於該絕緣基板的第一表面；第二天線元件，形成在該絕緣基板的與該第一表面相對的第二表面上；以及半導體封裝，包括：重分佈層結構，接合並電連接到該導電圖案層；第一半導體晶粒，電連接到該重分佈層結構；密封層，形成在該重分佈層結構上並圍繞該第一半導體晶粒。

Description

半導體封裝結構
本發明涉及半導體技術領域，尤其涉及一種半導體封裝結構。
為了確保電子產品和通訊裝置的持續小型化和多功能性，半導體封裝必須尺寸小、支援多針（multi-pin）連接、高速操作（operate）並且具有高功能性。此外，在諸如射頻（radio frequency，RF）封裝系統（system-in-package，SiP）組件之類的高頻應用中，天線通常用於啟用無線通訊。
當構造具有天線的無線通訊封裝時，封裝設計需要提供良好的天線特性（例如高效率、寬頻寬（bandwidth）等），同時提供可靠且低成本的封裝解決方案。在常規的半導體封裝結構中，基於基板的天線與晶片接合。由於基於基板的天線較厚，因此難以減小封裝尺寸，並且由於較長的走線長度而導致晶片間天線損耗較高。而且，基於基板的天線由於接合在其上的晶片的散熱路徑較長而提供了較差的熱性能。
有鑑於此，本發明提供一種半導體封裝結構，以解決上述問題。
根據本發明的第一方面，公開一種半導體封裝結構，包括： 天線裝置，包括：導電圖案層，包括第一天線元件，形成在絕緣基板中並且鄰近於該絕緣基板的第一表面；第二天線元件，形成在該絕緣基板的與該第一表面相對的第二表面上；以及 半導體封裝，包括：重分佈層結構，接合並電連接到該導電圖案層；第一半導體晶粒，電連接到該重分佈層結構；密封層，形成在該重分佈層結構上並圍繞該第一半導體晶粒。
根據本發明的第二方面，公開一種半導體封裝結構，包括： 重分佈層結構，具有第一表面和與該第一表面相對的第二表面； 第一半導體晶粒，具有形成在該重分佈層結構的該第一表面上的有源表面； 第一電連接器，形成在該重分佈層結構的該第二表面上； 絕緣基板，具有第一表面，堆疊在重分佈層結構的第二表面上； 導電圖案層，包括第一天線元件，形成在該絕緣基板中並與絕緣基板的該第一表面相鄰； 第二天線元件，形成在該絕緣基板的與該絕緣基板的該第一表面相對的第二表面上；以及 第二電連接器，形成在該絕緣基板的該第一表面上並且電連接到該第一天線元件，其中，該第二電連接器的尺寸大於該第一電連接器的尺寸。
本發明的半導體封裝結構由於包括天線裝置，包括：導電圖案層，包括第一天線元件，形成在絕緣基板中並且鄰近於該絕緣基板的第一表面；第二天線元件，形成在該絕緣基板的與該第一表面相對的第二表面上；以及半導體封裝，包括：重分佈層結構，接合並電連接到該導電圖案層；第一半導體晶粒，電連接到該重分佈層結構；密封層，形成在該重分佈層結構上並圍繞該第一半導體晶粒。這樣將半導體封裝設置在絕緣基板外，從而可以減小帶有天線的絕緣基板的厚度，並且可以減小半導體封裝結構的尺寸以及晶粒到天線的損耗。
以下描述是實施本發明的最佳構想模式。進行該描述是為了說明本發明的一般原理，而不應被認為是限制性的。本發明的範圍由所附申請專利範圍書確定。
將針對特定實施例並參考某些附圖來描述本發明，但是本發明不限於此，而是僅由申請專利範圍書來限制。所描述的附圖僅是示意性的而非限制性的。在附圖中，為了說明的目的，一些元件的尺寸可能被放大並且未按比例繪製。在本發明的實施中，尺寸和相對尺寸不對應於實際尺寸。
圖1是根據一些實施例的示例性半導體封裝結構10的截面圖。在一些實施例中，半導體封裝結構10是晶圓級（wafer-level）半導體封裝結構，並且是倒裝晶片（flip-chip）半導體封裝結構。半導體封裝結構10可以安裝在基座（base）（未示出）上。例如，半導體封裝結構10可以是系統單晶片（system-on-chip，SOC）封裝結構。而且，基座可以包括印刷電路板（printed circuit board，PCB）並且可以由聚丙烯（polypropylene，PP）形成。
替代地，基座是封裝基板。半導體封裝結構10透過接合製程安裝到基座上。例如，半導體封裝結構10包括電連接器150，該電連接器150透過接合製程安裝在基座上並電耦接至基座。如圖1所示，在一些實施例中，每個電連接器150包括導電凸塊結構，例如銅凸塊或焊球。可替換地，每個電連接器150包括導電柱結構、導線結構、或導電膏（paste）結構。
在一些實施例中，如圖1所示，半導體封裝結構10還包括半導體封裝110a、電連接器140和經由電連接器140堆疊並安裝在下面的半導體封裝110a上的天線裝置130。在一些實施例中，每個電連接器140包括導電凸塊結構，例如銅凸塊或焊球。可選地，每個電連接器140包括導電柱結構、導線結構或導電膏結構。在一些實施例中，電連接器140和電連接器150是焊球，並且電連接器140的尺寸（例如高度或體積等）不同於（例如小於）電連接器150的尺寸。例如，電連接器140的高度H1低於電連接器150的高度H2，如圖1所示。
在一些實施例中，半導體封裝110a包括半導體晶粒100。例如，半導體晶粒100是系統單晶片（system-on-chip，SOC）晶粒，其可以包括微控制器（microcontroller，MCU）、微處理器（microprocessor，MPU）、電源管理積體電路（power management integrated circuit，PMIC）、全球定位系統（global positioning system，GPS）裝置或射頻（radio frequency，RF）裝置或這些任意組合。
半導體晶粒100具有兩個相對的側面。更具體地，半導體晶粒100具有有源表面（active surface）100a和與有源表面100a相對的非有源表面100b（non-active surface）。非有源表面100b也可以稱為後表面（rear surface），並且有源表面100a也可以稱為與後表面相對的前表面（front surface）。在一些實施例中，半導體晶粒100包括焊盤101，其佈置在有源表面100a上並且電連接到半導體晶粒100的一個或複數個功能電路（未示出）。在一些實施例中，半導體晶粒100的焊盤101屬於半導體晶粒100的互連結構（未示出）的最上層金屬層。
在一些實施例中，半導體封裝結構10的半導體封裝110a包括具有第一表面102a和與第一表面102a相對的第二表面102b的重分佈層（redistribution layer，RDL）結構102。 RDL結構102，也稱為扇出（fan-out）RDL結構。在一些實施例中，RDL結構102設置在半導體晶粒100的有源表面100a上，並透過半導體晶粒100的焊盤101電連接到半導體晶粒100。
在一些實施例中，RDL結構102包括設置在金屬間介電（inter-metal dielectric，IMD）層中的一個或複數個導電跡線。例如，第一導電跡線設置在與RDL結構102的第一表面102a相鄰的IMD層的第一層級。第一導電跡線中的至少一個電耦接至半導體晶粒100。導電跡線設置在高於IMD層的第一層級的第二層級處並且與RDL結構102的第二表面102b相鄰。此外，第二導電跡線中的至少一個接合並且電耦接至一個或複數個電連接器140，使得電連接器140透過RDL結構102電耦接到半導體晶粒100。
IMD層可以包括從半導體晶粒100的有源表面100a連續地堆疊的第一子介電層和第二子介電層，從而在第一子介電層中形成第一導電跡線，並且第二導電跡線形成在第二子介電層中。在一些實施例中，IMD層由有機材料（該有機材料包括聚合物基礎材料）、非有機材料（該非有機材料包括氮化矽（SiNX ）、氧化矽（SiOX ）、石墨烯等）形成。例如，第一子介電層和第二子介電層可以由聚合物基礎材料製成。在一些其他實施例中，IMD層由高k（k是介電層的介電常數）介電層製成。
應當注意，圖1所示的RDL結構102的導電跡線的數量和子介電層的數量僅是示例，並不限於實施例中公開的內容。
在一些實施例中，半導體封裝結構10的半導體封裝110a還包括形成在RDL結構102的第一表面102a上的封裝層104。封裝層104圍繞半導體晶粒100並覆蓋非有源表面。封裝層104具有與RDL結構102的側壁（或邊緣）基本對準（或與之對齊）的側壁（或邊緣）。
此外，封裝層104和半導體晶粒100透過RDL結構102與電連接器140分開。換句話說，電連接器140不與封裝層104和半導體晶粒100接觸。
封裝層104可以由模塑料材料製成，例如環氧樹脂、樹脂、可模制聚合物等。可以在基本上為液體的同時施加模塑料材料，然後可以透過化學反應例如在環氧樹脂或樹脂中使其固化。例如，模塑料材料可以是紫外線（ultraviolet，UV）或熱固化的聚合物，其被施加為能夠設置在半導體晶粒100周圍的凝膠或可延展的固體，然後透過UV或熱固化製程來固化。模塑料可以用模具（未示出）固化。
在一些實施例中，天線裝置130包括絕緣基板120。絕緣基板120具有第一表面120a和與第一表面120a相對的第二表面120b。在一些實施例中，絕緣基板120的第一表面120a經由電連接器140粘附至第二表面RDL結構102。
絕緣基板120可以是單層或多層結構，並且包括芯（core）絕緣材料中的任何一種，例如，玻璃環氧樹脂、雙馬來醯亞胺-三嗪（bismaleimide-triazine，BT）或ABF（Ajinomoto Build up Film，味之素複合薄膜）。在一些實施例中，絕緣基板120包括從絕緣基板120的第一表面120a連續堆疊的第一子介電層115a、第二子介電層115b和第三子介電層115c。
在一些實施例中，天線裝置130包括導電圖案層116，該導電圖案層116包括第一天線元件116a和一個或複數個導電跡線116b，該導電圖案層116形成在絕緣基板120的第一子介電層115a中。第一天線元件116a導電跡線116b接合並且電連接到一個或複數個電連接器150，並且導電跡線116b接合並且電連接到電連接器140和150。
在那些情況下，電連接器140接合在RDL結構102和導電圖案層116之間，使得導電圖案層116與RDL結構102透過間隙141分開。此外，電連接器150是電連接到導電圖案層116的第一天線元件116a並圍繞半導體封裝110a。
在一些實施例中，天線裝置130進一步包括形成在絕緣基板120的第二表面120b（即，第三子介電層115c的上表面）上的第二天線元件118和一個或複數個貫穿通孔結構119（或通孔結構119），貫穿通孔結構119在第一子介電層115a、第二子介電層115b和第三子介電層115c中形成的。貫穿通孔結構119可以稱為貫穿絕緣體通孔（through insulator via，TIV），並且電連接在第一天線元件116a和第二天線元件118之間，以便在天線裝置130中形成天線。導電圖案層116、第二天線元件118和通孔結構119由金屬材料製成，例如銅或其他合適的天線材料。
應當注意，圖1所示的絕緣基板的導電圖案層的數量和子介電層的數量僅是示例，並且不限於實施例中公開的內容。
圖2是根據本發明的一些實施例的示例性半導體封裝結構20的截面圖。為簡潔起見，以下實施例中與先前參考圖1描述的元件相同或相似的元件的描述可以省略。在該實施例中，半導體封裝結構20類似於圖1所示的半導體封裝結構10。如圖2所示，與半導體封裝結構10的半導體封裝110a不同，半導體封裝結構20的半導體封裝110b包括複數個半導體晶粒。在一些實施例中，半導體封裝110b包括電連接到RDL結構102並由封裝層104圍繞的半導體晶粒200和300。更具體地，類似於圖1所示的半導體晶粒100，半導體晶粒200具有有源表面200a和與有源表面200a相對的非有源表面200b。半導體晶粒300具有有源表面300a和與有源表面300a相對的非有源表面300b。此外，RDL結構102設置並接合到半導體晶粒200的有源表面200a和半導體晶粒300的有源表面300a上，從而半導體晶粒200與半導體晶粒300透過焊盤101和RDL結構102相互電連接。
在一些實施例中，半導體晶粒200的尺寸不同於半導體晶粒300的尺寸。例如，半導體晶粒200的尺寸(例如高度或體積等)小於半導體晶粒300的尺寸。
應當注意，圖2所示的半導體晶粒的數量僅是示例，並且不限於實施例中公開的數量。
在其他一些實施例中，半導體晶粒200的功能電路與半導體晶粒300的功能電路不同。例如，半導體晶粒200和/或半導體晶粒300是包括中央處理單元(central processing unit，CPU)、圖形處理單元(graphics processing unit，GPU)，動態隨機存取記憶體(dynamic random access memory，DRAM)控制器或這些任意組合。替代地，半導體晶粒200和/或半導體晶粒300是系統單晶粒(SOC)晶粒。在那些情況下，半導體晶粒200和300可以由不同的技術節點(例如10nm和14nm等等)形成。半導體晶粒200的尺寸和功能電路可以與半導體晶粒300的尺寸和功能電路均不同，或者至少其中任一一項不同。
圖3是根據本發明的一些實施例的示例性半導體封裝結構30的截面圖。為簡潔起見，以下實施例中與先前參考圖2描述的元件相同或相似的元件的描述可以省略。在該實施例中，半導體封裝結構30與圖2所示的半導體封裝結構20相似，除了半導體封裝結構30還包括形成在導電圖案層116和RDL結構102之間的間隙141中的無源器件170，並無源器件170電連接到RDL結構102。無源器件170可以設置在至少兩個電連接器140之間，如圖3所示。在一些實施例中，無源器件170包括電容器、電感器、電阻器或它們的組合。在一些實施例中，無源器件170是整合無源器件(integrated passive device，IPD)。在一些實施例中，無源器件170可以接觸絕緣基板120的第二表面120b。
圖4是根據本發明的一些實施例的示例性半導體封裝結構40的截面圖。為簡潔起見，以下實施例中與先前參考圖3描述的元件相同或相似的元件的描述可以省略。在該實施例中，半導體封裝結構40類似於圖3中所示的半導體封裝結構30，除了半導體封裝結構40還包括具有與無源器件170的尺寸不同的尺寸的無源器件172。在一些實施例中，無源器件172電連接到導電圖案層116並且在半導體封裝110b和電連接器150中的至少一個之間。在一些實施例中，無源器件172具有比無源器件170更大的尺寸。此外，無源器件172具有比電連接器140和無源器件170大的尺寸（例如，高度H3）。作為示例，無源器件172具有不小於100um的高度H3，無源器件170的高度不大於100um。此外，無源器件172的高度H3大於無源器件170的高度。本實施例中，無源器件170和無源器件172可以根據需求選擇其中一個進行設置於半導體封裝結構中，也可以均設置於半導體封裝結構中。
在先前技術中，通常是單獨的半導體晶粒或晶片安裝在基板上，並且透過焊球或電連接器等連接到基板的RDL結構，這種方式需要在基板中形成RDL結構以及天線結構，然而RDL結構和天線結構所要求的製程是不同的，並且各自要求也不同（例如RDL結構要求間距較小，以實現更密集的佈線；而天線結構的佈置更多的考慮減小所受到的幹擾），因此若是在同一個基板上形成RDL結構和天線結構，將會使基板的製程更加複雜，成本更高，並且良品率也難以保證。本發明實施例中，將RDL結構設置在晶粒所在的封裝結構中，而將RDL結構（用於將晶粒電連接到其他結構）設置在晶粒所在的封裝結構中，這樣就可以將不同要求的兩種佈線（RDL結構和天線結構）分開在兩個封裝中形成；這樣就將需要更加精密製程的RDL結構與晶粒在一個封裝中製造形成，將無需那樣精密製程的天線結構放在基板的製程中一起形成；以實現更高的製造效率，並且簡化製程步驟，降低成本，同時分開製造不僅可以提高製造時的良品率，並且還可以在兩個封裝組裝時，使用已知良好的封裝進行組裝，從而進一步提高良品率。另外，本實施例中將較大的電連接器150設置在天線結構所在的基板上(絕緣基板120)，以與天線結構的製程相適應(天線結構的佈線間距較寬，因此更加容易設置較大的焊球或電連接器)，方便製造。半導體封裝(半導體封裝110a或110b)上僅有較小的電連接器140，並且位於天線基板(絕緣基板120)與半導體封裝(半導體封裝110a或110b)之間以將兩者電連接，因此整個半導體封裝結構(半導體封裝結構10-40，或稱為天線封裝結構)的尺寸(例如高度或厚度)較小，適用範圍更廣，使用場景更靈活。本實施例中半導體封裝結構30或40可以僅通過電連接器140連接到外部，因此RDL結構等的佈線更加一致，方便佈線和製造。本實施例中，晶粒可以透過導電跡線116b連接到電連接器150，並且天線元件(例如第二天線元件118)也可以連接到電連接器150，這樣不僅均可以透過電連接器150連接到封裝結構(或天線封裝)外部，並且還可以將天線元件與半導體晶粒電連接，因此這種連接方式使用了更加簡便和短路徑進行電連接，簡化了佈線並且提高了傳輸效率，減小了傳輸損耗。根據前述實施例，半導體封裝結構被設計為將天線製造整合到半導體封裝結構中。在半導體封裝結構中，允許在絕緣基板中形成天線，該絕緣基板透過使用凸塊結構(例如，焊球)而接合到半導體封裝的RDL結構。與接合有半導體晶粒/晶片的基於基板的天線相比，由於下面的半導體封裝的細間距(fine pitch)的RDL結構，可以減小帶有天線的絕緣基板的厚度。因此，可以減小半導體封裝結構的尺寸以及晶粒到天線的損耗。由於天線是透過成熟的基板技術製造的，因此緊湊且扇出與天線整合的封裝，可以降低半導體封裝結構的製造成本，並且可以簡化半導體封裝結構的製造製程。
根據前述實施例，由於其中具有天線的絕緣基板的厚度減小，以提供半導體封裝中的半導體晶粒的短的散熱路徑，所以可以提高熱性能。
根據前述實施例，因為天線形成在與其中具有半導體晶粒的半導體封裝件分離的絕緣基板中，所以在半導體封裝結構的製造期間可以使用已知的良好的晶粒封裝和已知的良好的天線從而防止了良率損失並進一步降低了半導體封裝結構的製造成本。
根據前述實施例，由於在將那些半導體晶粒放置在半導體封裝中之前，可以透過不同的技術節點來形成半導體晶粒，所以可以啟用晶粒分隔，並且可以簡化半導體封裝的製造製程，從而降低了半導體封裝的製造成本。
根據前述實施例，由於無源器件整合在半導體封裝結構中，所以可以改善電性能。
根據前述實施例，由於可以將具有不同尺寸的無源器件整合在半導體封裝結構中，因此可以進一步提高電性能。此外，可以增加將大型無源器件整合到半導體封裝結構中的靈活性。
儘管已經對本發明實施例及其優點進行了詳細說明，但應當理解的是，在不脫離本發明的精神以及申請專利範圍所定義的範圍內，可以對本發明進行各種改變、替換和變更。所描述的實施例在所有方面僅用於說明的目的而並非用於限制本發明。本發明的保護範圍當視所附的申請專利範圍所界定者為准。本領域技術人員皆在不脫離本發明之精神以及範圍內做些許更動與潤飾。
10,20,30,40:半導體封裝結構 100,200,300:半導體晶粒 100a,200a,300a:有源表面 100b,200b,300b:非有源表面 101:焊盤 102:RDL結構 102a,120a:第一表面 102b,120b:第二表面 104:封裝層 110a,110b:半導體封裝 115a:第一子介電層 115b:第二子介電層 115c:第三子介電層 116:導電圖案層 116a:第一天線元件 116b:導電跡線 118:第二天線元件 119:通孔結構 120:絕緣基板 130:天線裝置 141:間隙 140,150:電連接器 170,172:無源器件
透過閱讀後續的詳細描述和實施例可以更全面地理解本發明，本實施例參照附圖給出，其中： 圖1是根據一些實施例的示例性半導體封裝結構的截面圖。 圖2是根據一些實施例的示例性半導體封裝結構的截面圖。 圖3是根據一些實施例的示例性半導體封裝結構的截面圖。 圖4是根據一些實施例的示例性半導體封裝結構的截面圖。
10:半導體封裝結構
100:半導體晶粒
100a:有源表面
100b:非有源表面
101:焊盤
102:RDL結構
102a,120a:第一表面
102b,120b:第二表面
104:封裝層
110a:半導體封裝
115a:第一子介電層
115b:第二子介電層
115c:第三子介電層
116:導電圖案層
116a:第一天線元件
116b:導電跡線
118:第二天線元件
119:通孔結構
120:絕緣基板
130:天線裝置
141:間隙
140,150:電連接器

Claims (8)

  1. 一種半導體封裝結構，包括：天線裝置，包括：導電圖案層，包括第一天線元件，形成在絕緣基板中並且鄰近於該絕緣基板的第一表面；第二天線元件，形成在該絕緣基板的與該第一表面相對的第二表面上；以及半導體封裝，包括：重分佈層結構，接合並電連接到該導電圖案層；第一半導體晶粒，電連接到該重分佈層結構；密封層，形成在該重分佈層結構上並圍繞該第一半導體晶粒；第一電連接器，將該重分佈層結構接合到該導電圖案層，使得該導電圖案層與該重分佈層結構由間隙隔開；以及第二電連接器，電連接到該導電圖案層並圍繞該半導體封裝；無源器件，形成在該導電圖案層和該重分佈層結構之間的該間隙中並電連接到該重分佈層結構，或/和，電連接到該導電圖案層並且在該半導體封裝和該第二電連接器中的至少一個之間。
  2. 如請求項1之半導體封裝結構，其中，該第一電連接器和該第二電連接器是焊球，並且該第二電連接器的焊球尺寸不同於該第一電連接器的焊球尺寸。
  3. 如請求項1之半導體封裝結構，其中，該第一電連接器的高度低於該無源器件的高度。
  4. 如請求項1之半導體封裝結構，其中，所述半導體封裝還包括：第二半導體晶粒，電連接至該重分佈層結構並由封裝層圍繞，其中，該第二半導體晶粒的尺寸不同於該第一半導體晶粒的尺寸，或/和，該第二半導體晶粒的功能電路與該第一半導體晶粒的功能電路不同。
  5. 如請求項1之半導體封裝結構，其中，該天線裝置還包括：至少一個通孔結構，形成在該絕緣基板中並該電連接在該第一天線元件和該第二天線元件之間。
  6. 一種半導體封裝結構，包括：重分佈層結構，具有第一表面和與該第一表面相對的第二表面；第一半導體晶粒，具有形成在該重分佈層結構的該第一表面上的有源表面；第一電連接器，形成在該重分佈層結構的該第二表面上；絕緣基板，具有第一表面，堆疊在重分佈層結構的第二表面上；導電圖案層，包括第一天線元件，形成在該絕緣基板中並與絕緣基板的該第一表面相鄰；第二天線元件，形成在該絕緣基板的與該絕緣基板的該第一表面相對的第二表面上；以及第二電連接器，形成在該絕緣基板的該第一表面上並且電連接到該第一天線元件，其中，該第二電連接器的尺寸大於該第一電連接器的尺寸；無源器件，形成在該導電圖案層和該重分佈層結構之間的該間隙中並電連接到該重分佈層結構，或/和，電連接到該導電圖案層並且在該半導體封裝和該第二電連接器中的至少一個之間。
  7. 如請求項6之半導體封裝結構，還包括：封裝層，形成在該重分佈層結構的該第一表面上並圍繞該第一半導體晶粒。
  8. 如請求項6之半導體封裝結構，還包括：第二半導體晶粒，具有在該重分佈層結構的該第一表面上形成的該有源表面；以及 密封層，形成在該重分佈層結構的該第一表面上並且在該第一半導體晶粒和該第二半導體晶粒之間並圍繞該第一半導體晶粒和該第二半導體晶粒。
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