TWI734684B - 用於化學相沉積之有機金屬化合物 - Google Patents

用於化學相沉積之有機金屬化合物 Download PDF

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Publication number
TWI734684B
TWI734684B TW105113264A TW105113264A TWI734684B TW I734684 B TWI734684 B TW I734684B TW 105113264 A TW105113264 A TW 105113264A TW 105113264 A TW105113264 A TW 105113264A TW I734684 B TWI734684 B TW I734684B
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Taiwan
Prior art keywords
metal
group
compound
deposition
sico
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TW105113264A
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English (en)
Chinese (zh)
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TW201704511A (zh
Inventor
拉賈 歐德拉
存海 董
紹恩 森貝拉
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加拿大商海星化工無限責任公司
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/02—Iron compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW105113264A 2015-04-30 2016-04-28 用於化學相沉積之有機金屬化合物 TWI734684B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562154896P 2015-04-30 2015-04-30
US62/154,896 2015-04-30

Publications (2)

Publication Number Publication Date
TW201704511A TW201704511A (zh) 2017-02-01
TWI734684B true TWI734684B (zh) 2021-08-01

Family

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Family Applications (1)

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TW105113264A TWI734684B (zh) 2015-04-30 2016-04-28 用於化學相沉積之有機金屬化合物

Country Status (7)

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US (2) US20180155383A1 (enExample)
EP (1) EP3288954A4 (enExample)
JP (1) JP6853814B2 (enExample)
KR (1) KR102641862B1 (enExample)
CN (1) CN107614508B (enExample)
TW (1) TWI734684B (enExample)
WO (1) WO2016172792A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790943B (zh) * 2022-03-11 2023-01-21 漢民科技股份有限公司 化學氣相沉積系統與方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11035048B2 (en) 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
CA2975104A1 (en) * 2017-08-02 2019-02-02 Seastar Chemicals Inc. Organometallic compounds and methods for the deposition of high purity tin oxide
US11205573B2 (en) 2017-08-09 2021-12-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof
JP7143124B2 (ja) * 2017-08-09 2022-09-28 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｇｅ含有Ｃｏ膜形成材料、Ｇｅ含有Ｃｏ膜およびその成膜方法
TW202028504A (zh) * 2018-12-03 2020-08-01 德商馬克專利公司 高度選擇性沉積金屬膜之方法
TWI794671B (zh) * 2019-11-20 2023-03-01 德商馬克專利公司 用於選擇性形成含金屬膜之化合物及方法
US11319449B2 (en) * 2019-12-20 2022-05-03 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Area selective deposition of metal containing films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468847B1 (ko) * 2002-04-02 2005-01-29 삼성전자주식회사 알콜을 이용한 금속산화물 박막의 화학기상증착법
US20090208637A1 (en) * 2006-06-15 2009-08-20 Advanced Technology Materials, Inc. Cobalt precursors useful for forming cobalt-containing films on substrates
US20090269507A1 (en) * 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
WO2014118748A1 (en) * 2013-01-31 2014-08-07 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition
JP2016513087A (ja) * 2013-01-31 2016-05-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード マンガン含有化合物、その合成及びマンガン含有膜の堆積へのその使用
US20160064275A1 (en) * 2014-08-27 2016-03-03 Applied Materials, Inc. Selective Deposition With Alcohol Selective Reduction And Protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790943B (zh) * 2022-03-11 2023-01-21 漢民科技股份有限公司 化學氣相沉積系統與方法

Also Published As

Publication number Publication date
WO2016172792A1 (en) 2016-11-03
EP3288954A4 (en) 2018-12-12
KR102641862B1 (ko) 2024-02-27
CN107614508A (zh) 2018-01-19
JP6853814B2 (ja) 2021-03-31
EP3288954A1 (en) 2018-03-07
CN107614508B (zh) 2021-04-27
TW201704511A (zh) 2017-02-01
US20180155383A1 (en) 2018-06-07
US11498938B2 (en) 2022-11-15
US20200399300A1 (en) 2020-12-24
JP2018515694A (ja) 2018-06-14
KR20180004131A (ko) 2018-01-10

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