TWI730133B - 在邏輯和熱點檢測中使用z層脈絡以用於改善靈敏度及抑制滋擾的系統及方法 - Google Patents

在邏輯和熱點檢測中使用z層脈絡以用於改善靈敏度及抑制滋擾的系統及方法 Download PDF

Info

Publication number
TWI730133B
TWI730133B TW106121738A TW106121738A TWI730133B TW I730133 B TWI730133 B TW I730133B TW 106121738 A TW106121738 A TW 106121738A TW 106121738 A TW106121738 A TW 106121738A TW I730133 B TWI730133 B TW I730133B
Authority
TW
Taiwan
Prior art keywords
wafer
design file
critical regions
processor
potential defect
Prior art date
Application number
TW106121738A
Other languages
English (en)
Chinese (zh)
Other versions
TW201810482A (zh
Inventor
帕凡 庫瑪 佩拉利
虎成 李
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201810482A publication Critical patent/TW201810482A/zh
Application granted granted Critical
Publication of TWI730133B publication Critical patent/TWI730133B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Manufacturing & Machinery (AREA)
TW106121738A 2016-06-29 2017-06-29 在邏輯和熱點檢測中使用z層脈絡以用於改善靈敏度及抑制滋擾的系統及方法 TWI730133B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662356499P 2016-06-29 2016-06-29
US62/356,499 2016-06-29
US15/600,784 US10304177B2 (en) 2016-06-29 2017-05-21 Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression
US15/600,784 2017-05-21

Publications (2)

Publication Number Publication Date
TW201810482A TW201810482A (zh) 2018-03-16
TWI730133B true TWI730133B (zh) 2021-06-11

Family

ID=60786349

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106121738A TWI730133B (zh) 2016-06-29 2017-06-29 在邏輯和熱點檢測中使用z層脈絡以用於改善靈敏度及抑制滋擾的系統及方法

Country Status (7)

Country Link
US (1) US10304177B2 (https=)
JP (1) JP6906044B2 (https=)
KR (1) KR102201122B1 (https=)
CN (1) CN109314067B (https=)
IL (1) IL263315B (https=)
TW (1) TWI730133B (https=)
WO (1) WO2018005132A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11320742B2 (en) * 2018-10-31 2022-05-03 Taiwan Semiconductor Manufacturing Company Ltd. Method and system for generating photomask patterns
US11557031B2 (en) * 2019-11-21 2023-01-17 Kla Corporation Integrated multi-tool reticle inspection
US11887296B2 (en) * 2021-07-05 2024-01-30 KLA Corp. Setting up care areas for inspection of a specimen
KR102657751B1 (ko) * 2021-08-19 2024-04-16 주식회사 크레셈 학습모델을 이용한 기판 검사 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050004774A1 (en) * 2003-07-03 2005-01-06 William Volk Methods and systems for inspection of wafers and reticles using designer intent data
US20080295048A1 (en) * 2007-05-24 2008-11-27 Youval Nehmadi Inline defect analysis for sampling and SPC

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215896B1 (en) 1995-09-29 2001-04-10 Advanced Micro Devices System for enabling the real-time detection of focus-related defects
US20070131877A9 (en) * 1999-11-29 2007-06-14 Takashi Hiroi Pattern inspection method and system therefor
JP2001331784A (ja) 2000-05-18 2001-11-30 Hitachi Ltd 欠陥分類方法及びその装置
EP1309875A2 (en) 2000-08-11 2003-05-14 Therma-Wave, Inc. Device and method for optical inspection of semiconductor wafer
US6918101B1 (en) * 2001-10-25 2005-07-12 Kla -Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
WO2004008245A2 (en) 2002-07-12 2004-01-22 Cadence Design Systems, Inc. Method and system for context-specific mask inspection
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7496874B2 (en) * 2005-12-21 2009-02-24 Inetrnational Business Machines Corporation Semiconductor yield estimation
WO2008077100A2 (en) 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US7962864B2 (en) * 2007-05-24 2011-06-14 Applied Materials, Inc. Stage yield prediction
US8126255B2 (en) * 2007-09-20 2012-02-28 Kla-Tencor Corp. Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
US8223327B2 (en) 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
US20110296362A1 (en) * 2009-02-04 2011-12-01 Tamao Ishikawa Semiconductor defect integrated projection method and defect inspection support apparatus equipped with semiconductor defect integrated projection function
US8559001B2 (en) 2010-01-11 2013-10-15 Kla-Tencor Corporation Inspection guided overlay metrology
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US20120316855A1 (en) * 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
US9087367B2 (en) * 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8826200B2 (en) * 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
JP6255152B2 (ja) 2012-07-24 2017-12-27 株式会社日立ハイテクノロジーズ 検査装置
US9189844B2 (en) * 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9092846B2 (en) * 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US8984450B2 (en) * 2013-03-14 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for extracting systematic defects
US9310320B2 (en) * 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9183624B2 (en) 2013-06-19 2015-11-10 Kla-Tencor Corp. Detecting defects on a wafer with run time use of design data
US9715725B2 (en) 2013-12-21 2017-07-25 Kla-Tencor Corp. Context-based inspection for dark field inspection
US9401016B2 (en) 2014-05-12 2016-07-26 Kla-Tencor Corp. Using high resolution full die image data for inspection

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050004774A1 (en) * 2003-07-03 2005-01-06 William Volk Methods and systems for inspection of wafers and reticles using designer intent data
US20080295048A1 (en) * 2007-05-24 2008-11-27 Youval Nehmadi Inline defect analysis for sampling and SPC

Also Published As

Publication number Publication date
TW201810482A (zh) 2018-03-16
IL263315B (en) 2020-08-31
JP6906044B2 (ja) 2021-07-21
US20180005367A1 (en) 2018-01-04
KR20190014103A (ko) 2019-02-11
WO2018005132A1 (en) 2018-01-04
IL263315A (en) 2018-12-31
CN109314067B (zh) 2020-07-17
JP2019527475A (ja) 2019-09-26
KR102201122B1 (ko) 2021-01-08
CN109314067A (zh) 2019-02-05
US10304177B2 (en) 2019-05-28

Similar Documents

Publication Publication Date Title
US10670535B2 (en) Automated pattern fidelity measurement plan generation
KR102438824B1 (ko) 3차원 반도체 구조체들의 검사를 위한 결함 발견 및 레시피 최적화
TWI726169B (zh) 用於偵測一倍縮光罩上之缺陷之系統、非暫時性電腦可讀媒體及電腦實施方法
KR102019534B1 (ko) 결함 특유의, 다중 채널 정보를 이용한 웨이퍼 상의 결함 검출
TWI701427B (zh) 經組態以偵測一樣品上之缺陷之系統、用於偵測一樣品上之缺陷之方法及其非暫時性電腦可讀媒體
TWI738780B (zh) 用於大量圖案檢索之檢測及設計間之漂移之自動校正之系統及方法
TWI611488B (zh) 使用精確缺陷位置調整晶圓檢查配方
TWI667717B (zh) 對於關注之圖像群體之圖案之異常偵測
TWI778264B (zh) 設計為基礎之對準之效能監控
TW201629811A (zh) 判定用於樣本上之關注區域之座標
US7728965B2 (en) Systems and methods for inspecting an edge of a specimen
TWI730133B (zh) 在邏輯和熱點檢測中使用z層脈絡以用於改善靈敏度及抑制滋擾的系統及方法
US9702827B1 (en) Optical mode analysis with design-based care areas
TWI861415B (zh) 偵測缺陷之系統及方法及相關非暫時性電腦可讀媒體
CN111837227B (zh) 用于确定在晶片上所检测到的缺陷位于上面的层的系统
TW202316105A (zh) 設置用於檢查樣品之關注區域
CN113677980B (zh) 用于检验的缺陷候选生成
TW202141210A (zh) 使用檢測工具以判定用於樣本之類計量(metrology-like)之資訊
TWI751329B (zh) 用於重複缺陷分析之相對缺陷位置之高精準度