CN109314067B - 在逻辑及热点检验中使用z层上下文来改善灵敏度及抑制干扰的系统及方法 - Google Patents

在逻辑及热点检验中使用z层上下文来改善灵敏度及抑制干扰的系统及方法 Download PDF

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CN109314067B
CN109314067B CN201780035591.8A CN201780035591A CN109314067B CN 109314067 B CN109314067 B CN 109314067B CN 201780035591 A CN201780035591 A CN 201780035591A CN 109314067 B CN109314067 B CN 109314067B
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wafer
design file
critical regions
processor
layers
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Chinese (zh)
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CN109314067A (zh
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P·K·佩拉利
李胡成
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Manufacturing & Machinery (AREA)
CN201780035591.8A 2016-06-29 2017-06-16 在逻辑及热点检验中使用z层上下文来改善灵敏度及抑制干扰的系统及方法 Active CN109314067B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662356499P 2016-06-29 2016-06-29
US62/356,499 2016-06-29
US15/600,784 US10304177B2 (en) 2016-06-29 2017-05-21 Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression
US15/600,784 2017-05-21
PCT/US2017/037934 WO2018005132A1 (en) 2016-06-29 2017-06-16 Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression

Publications (2)

Publication Number Publication Date
CN109314067A CN109314067A (zh) 2019-02-05
CN109314067B true CN109314067B (zh) 2020-07-17

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CN201780035591.8A Active CN109314067B (zh) 2016-06-29 2017-06-16 在逻辑及热点检验中使用z层上下文来改善灵敏度及抑制干扰的系统及方法

Country Status (7)

Country Link
US (1) US10304177B2 (https=)
JP (1) JP6906044B2 (https=)
KR (1) KR102201122B1 (https=)
CN (1) CN109314067B (https=)
IL (1) IL263315B (https=)
TW (1) TWI730133B (https=)
WO (1) WO2018005132A1 (https=)

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* Cited by examiner, † Cited by third party
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US11320742B2 (en) * 2018-10-31 2022-05-03 Taiwan Semiconductor Manufacturing Company Ltd. Method and system for generating photomask patterns
US11557031B2 (en) * 2019-11-21 2023-01-17 Kla Corporation Integrated multi-tool reticle inspection
US11887296B2 (en) * 2021-07-05 2024-01-30 KLA Corp. Setting up care areas for inspection of a specimen
KR102657751B1 (ko) * 2021-08-19 2024-04-16 주식회사 크레셈 학습모델을 이용한 기판 검사 방법

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US20070131877A9 (en) * 1999-11-29 2007-06-14 Takashi Hiroi Pattern inspection method and system therefor
JP2001331784A (ja) 2000-05-18 2001-11-30 Hitachi Ltd 欠陥分類方法及びその装置
EP1309875A2 (en) 2000-08-11 2003-05-14 Therma-Wave, Inc. Device and method for optical inspection of semiconductor wafer
US6918101B1 (en) * 2001-10-25 2005-07-12 Kla -Tencor Technologies Corporation Apparatus and methods for determining critical area of semiconductor design data
WO2004008245A2 (en) 2002-07-12 2004-01-22 Cadence Design Systems, Inc. Method and system for context-specific mask inspection
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7496874B2 (en) * 2005-12-21 2009-02-24 Inetrnational Business Machines Corporation Semiconductor yield estimation
WO2008077100A2 (en) 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8799831B2 (en) * 2007-05-24 2014-08-05 Applied Materials, Inc. Inline defect analysis for sampling and SPC
US7962864B2 (en) * 2007-05-24 2011-06-14 Applied Materials, Inc. Stage yield prediction
US8126255B2 (en) * 2007-09-20 2012-02-28 Kla-Tencor Corp. Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
US8223327B2 (en) 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
US20110296362A1 (en) * 2009-02-04 2011-12-01 Tamao Ishikawa Semiconductor defect integrated projection method and defect inspection support apparatus equipped with semiconductor defect integrated projection function
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US20120316855A1 (en) * 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
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US8826200B2 (en) * 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
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US9189844B2 (en) * 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
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Also Published As

Publication number Publication date
TW201810482A (zh) 2018-03-16
IL263315B (en) 2020-08-31
JP6906044B2 (ja) 2021-07-21
US20180005367A1 (en) 2018-01-04
KR20190014103A (ko) 2019-02-11
WO2018005132A1 (en) 2018-01-04
IL263315A (en) 2018-12-31
TWI730133B (zh) 2021-06-11
JP2019527475A (ja) 2019-09-26
KR102201122B1 (ko) 2021-01-08
CN109314067A (zh) 2019-02-05
US10304177B2 (en) 2019-05-28

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