TWI730071B - 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 - Google Patents
反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 Download PDFInfo
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- TWI730071B TWI730071B TW106109866A TW106109866A TWI730071B TW I730071 B TWI730071 B TW I730071B TW 106109866 A TW106109866 A TW 106109866A TW 106109866 A TW106109866 A TW 106109866A TW I730071 B TWI730071 B TW I730071B
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-064269 | 2016-03-28 | ||
| JP2016064269A JP6739960B2 (ja) | 2016-03-28 | 2016-03-28 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201800831A TW201800831A (zh) | 2018-01-01 |
| TWI730071B true TWI730071B (zh) | 2021-06-11 |
Family
ID=59963180
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106109866A TWI730071B (zh) | 2016-03-28 | 2017-03-24 | 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 |
| TW110118052A TWI775442B (zh) | 2016-03-28 | 2017-03-24 | 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110118052A TWI775442B (zh) | 2016-03-28 | 2017-03-24 | 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10871707B2 (enExample) |
| JP (1) | JP6739960B2 (enExample) |
| KR (2) | KR102352732B1 (enExample) |
| SG (1) | SG11201807251SA (enExample) |
| TW (2) | TWI730071B (enExample) |
| WO (1) | WO2017169658A1 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI811037B (zh) | 2016-07-27 | 2023-08-01 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
| US10468149B2 (en) * | 2017-02-03 | 2019-11-05 | Globalfoundries Inc. | Extreme ultraviolet mirrors and masks with improved reflectivity |
| JP6861095B2 (ja) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| KR20240025717A (ko) | 2017-03-03 | 2024-02-27 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| TWI867651B (zh) | 2018-05-25 | 2024-12-21 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底、反射型光罩、及半導體裝置之製造方法 |
| KR102692564B1 (ko) * | 2018-09-21 | 2024-08-06 | 삼성전자주식회사 | 다층 박막 구조물 및 이를 이용한 위상 변환 소자 |
| TW202026770A (zh) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
| TWI845579B (zh) | 2018-12-21 | 2024-06-21 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收器及用於製造的方法 |
| JP7250511B2 (ja) * | 2018-12-27 | 2023-04-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TW202035792A (zh) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收體材料 |
| TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線（ｅｕｖ）遮罩素材及其製造方法 |
| US12197120B2 (en) | 2019-02-07 | 2025-01-14 | Asml Netherlands B.V. | Patterning device and method of use thereof |
| KR102214777B1 (ko) * | 2019-03-18 | 2021-02-10 | 한양대학교 산학협력단 | 극자외선 리소그래피용 마스크, 및 그 제조 방법 |
| JP7401356B2 (ja) * | 2019-03-27 | 2023-12-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| TW202104667A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| TW202104666A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| TWI836073B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體及其製造方法 |
| TWI836072B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 具有嵌入吸收層之極紫外光遮罩 |
| TWI845677B (zh) | 2019-05-22 | 2024-06-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11385536B2 (en) * | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
| JP6929340B2 (ja) * | 2019-11-21 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法 |
| KR20220122614A (ko) * | 2019-12-27 | 2022-09-02 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법 |
| US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TWI817073B (zh) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
| TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
| TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| TWI836207B (zh) | 2020-04-17 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US20230143851A1 (en) * | 2020-04-30 | 2023-05-11 | Toppan Photomask Co., Ltd. | Reflective photomask blank and reflective photomask |
| KR20210155863A (ko) | 2020-06-16 | 2021-12-24 | 삼성전자주식회사 | 극자외선 리소그래피용 위상 반전 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
| TW202202641A (zh) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收劑材料 |
| US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11940725B2 (en) * | 2021-01-27 | 2024-03-26 | S&S Tech Co., Ltd. | Phase shift blankmask and photomask for EUV lithography |
| US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| JP7616099B2 (ja) * | 2021-03-03 | 2025-01-17 | 信越化学工業株式会社 | 反射型マスクブランク及びその製造方法 |
| JP7640293B2 (ja) * | 2021-03-09 | 2025-03-05 | テクセンドフォトマスク株式会社 | 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び位相シフトマスクの修正方法 |
| KR20220168108A (ko) * | 2021-06-15 | 2022-12-22 | 에스케이하이닉스 주식회사 | 극자외선 리소그래피용 위상 시프트 마스크 및 제조 방법 |
| US12066755B2 (en) | 2021-08-27 | 2024-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
| CN118922779A (zh) * | 2022-03-29 | 2024-11-08 | 凸版光掩模有限公司 | 反射型光掩模坯以及反射型光掩模 |
| KR102882827B1 (ko) * | 2022-10-13 | 2025-11-07 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200834226A (en) * | 2006-09-15 | 2008-08-16 | Hoya Corp | Mask blank and method for manufacturing transfer mask |
| JP2010080659A (ja) * | 2008-09-25 | 2010-04-08 | Toppan Printing Co Ltd | ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法 |
| TW201019046A (en) * | 2008-10-04 | 2010-05-16 | Hoya Corp | Method of producing a reflective mask |
| TW201403213A (zh) * | 2012-03-28 | 2014-01-16 | Hoya Corp | 附多層反射膜基板的製造方法、反射型遮罩基底的製造方法及反射型遮罩的製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233321B1 (enExample) | 1971-07-10 | 1977-08-27 | ||
| JP2004207593A (ja) | 2002-12-26 | 2004-07-22 | Toppan Printing Co Ltd | 極限紫外線露光用マスク及びブランク並びにパターン転写方法 |
| JP2006228766A (ja) | 2005-02-15 | 2006-08-31 | Toppan Printing Co Ltd | 極端紫外線露光用マスク、マスクブランク、及び露光方法 |
| JP5476679B2 (ja) * | 2007-09-26 | 2014-04-23 | 凸版印刷株式会社 | ハーフトーン型ｅｕｖマスク及びハーフトーン型ｅｕｖマスクの製造方法 |
| JP5233321B2 (ja) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法 |
| JP5372455B2 (ja) * | 2008-10-04 | 2013-12-18 | Ｈｏｙａ株式会社 | 反射型マスクブランク及び反射型マスク、並びにこれらの製造方法 |
| KR101663842B1 (ko) * | 2008-11-27 | 2016-10-07 | 호야 가부시키가이샤 | 다층 반사막을 가진 기판 및 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 |
| WO2014021235A1 (ja) * | 2012-07-31 | 2014-02-06 | Hoya株式会社 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
| WO2014104276A1 (ja) * | 2012-12-28 | 2014-07-03 | Hoya株式会社 | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、マスクブランク用基板の製造方法及び多層反射膜付き基板の製造方法並びに半導体装置の製造方法 |
| KR20170120212A (ko) | 2013-09-18 | 2017-10-30 | 호야 가부시키가이샤 | 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법 |
| JP6301127B2 (ja) | 2013-12-25 | 2018-03-28 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
-
2016
- 2016-03-28 JP JP2016064269A patent/JP6739960B2/ja active Active
-
2017
- 2017-03-10 US US16/084,698 patent/US10871707B2/en active Active
- 2017-03-10 WO PCT/JP2017/009721 patent/WO2017169658A1/ja not_active Ceased
- 2017-03-10 KR KR1020187030286A patent/KR102352732B1/ko active Active
- 2017-03-10 SG SG11201807251SA patent/SG11201807251SA/en unknown
- 2017-03-10 KR KR1020227001343A patent/KR102479274B1/ko active Active
- 2017-03-24 TW TW106109866A patent/TWI730071B/zh active
- 2017-03-24 TW TW110118052A patent/TWI775442B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200834226A (en) * | 2006-09-15 | 2008-08-16 | Hoya Corp | Mask blank and method for manufacturing transfer mask |
| JP2010080659A (ja) * | 2008-09-25 | 2010-04-08 | Toppan Printing Co Ltd | ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法 |
| TW201019046A (en) * | 2008-10-04 | 2010-05-16 | Hoya Corp | Method of producing a reflective mask |
| TW201403213A (zh) * | 2012-03-28 | 2014-01-16 | Hoya Corp | 附多層反射膜基板的製造方法、反射型遮罩基底的製造方法及反射型遮罩的製造方法 |
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|---|---|
| WO2017169658A1 (ja) | 2017-10-05 |
| SG11201807251SA (en) | 2018-09-27 |
| KR20220012412A (ko) | 2022-02-03 |
| JP2017181571A (ja) | 2017-10-05 |
| JP6739960B2 (ja) | 2020-08-12 |
| KR102352732B1 (ko) | 2022-01-19 |
| US20190079383A1 (en) | 2019-03-14 |
| TW202134776A (zh) | 2021-09-16 |
| KR20180129838A (ko) | 2018-12-05 |
| TWI775442B (zh) | 2022-08-21 |
| TW201800831A (zh) | 2018-01-01 |
| KR102479274B1 (ko) | 2022-12-20 |
| US10871707B2 (en) | 2020-12-22 |
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