TWI730071B - 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 - Google Patents

反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 Download PDF

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Publication number
TWI730071B
TWI730071B TW106109866A TW106109866A TWI730071B TW I730071 B TWI730071 B TW I730071B TW 106109866 A TW106109866 A TW 106109866A TW 106109866 A TW106109866 A TW 106109866A TW I730071 B TWI730071 B TW I730071B
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Taiwan
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film
layer
phase shift
reflective mask
substrate
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TW106109866A
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English (en)
Chinese (zh)
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TW201800831A (zh
Inventor
池邊洋平
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
TW106109866A 2016-03-28 2017-03-24 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法 TWI730071B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-064269 2016-03-28
JP2016064269A JP6739960B2 (ja) 2016-03-28 2016-03-28 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201800831A TW201800831A (zh) 2018-01-01
TWI730071B true TWI730071B (zh) 2021-06-11

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Family Applications (2)

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TW106109866A TWI730071B (zh) 2016-03-28 2017-03-24 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法
TW110118052A TWI775442B (zh) 2016-03-28 2017-03-24 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法

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TW110118052A TWI775442B (zh) 2016-03-28 2017-03-24 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US10871707B2 (enExample)
JP (1) JP6739960B2 (enExample)
KR (2) KR102479274B1 (enExample)
SG (1) SG11201807251SA (enExample)
TW (2) TWI730071B (enExample)
WO (1) WO2017169658A1 (enExample)

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TWI774375B (zh) 2016-07-27 2022-08-11 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
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WO2018159392A1 (ja) 2017-03-03 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
KR102692564B1 (ko) * 2018-09-21 2024-08-06 삼성전자주식회사 다층 박막 구조물 및 이를 이용한 위상 변환 소자
TW202026770A (zh) 2018-10-26 2020-07-16 美商應用材料股份有限公司 用於極紫外線掩模吸收劑的ta-cu合金材料
TWI845579B (zh) 2018-12-21 2024-06-21 美商應用材料股份有限公司 極紫外線遮罩吸收器及用於製造的方法
JP7250511B2 (ja) 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
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TWI845677B (zh) 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836072B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 具有嵌入吸收層之極紫外光遮罩
TW202104666A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TW202104667A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836073B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩坯體及其製造方法
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JP6929340B2 (ja) 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
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TWI817073B (zh) 2020-01-27 2023-10-01 美商應用材料股份有限公司 極紫外光遮罩坯體硬遮罩材料
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TWI836207B (zh) 2020-04-17 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
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KR20210155863A (ko) 2020-06-16 2021-12-24 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크 및 이를 이용한 반도체 소자의 제조 방법
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
JP7793527B2 (ja) * 2020-09-28 2026-01-05 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
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JP7616099B2 (ja) * 2021-03-03 2025-01-17 信越化学工業株式会社 反射型マスクブランク及びその製造方法
JP7640293B2 (ja) * 2021-03-09 2025-03-05 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び位相シフトマスクの修正方法
KR20220168108A (ko) * 2021-06-15 2022-12-22 에스케이하이닉스 주식회사 극자외선 리소그래피용 위상 시프트 마스크 및 제조 방법
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Publication number Publication date
KR20180129838A (ko) 2018-12-05
TW201800831A (zh) 2018-01-01
US20190079383A1 (en) 2019-03-14
TW202134776A (zh) 2021-09-16
TWI775442B (zh) 2022-08-21
KR20220012412A (ko) 2022-02-03
KR102479274B1 (ko) 2022-12-20
WO2017169658A1 (ja) 2017-10-05
SG11201807251SA (en) 2018-09-27
KR102352732B1 (ko) 2022-01-19
JP6739960B2 (ja) 2020-08-12
JP2017181571A (ja) 2017-10-05
US10871707B2 (en) 2020-12-22

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