KR102479274B1 - 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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KR102479274B1
KR102479274B1 KR1020227001343A KR20227001343A KR102479274B1 KR 102479274 B1 KR102479274 B1 KR 102479274B1 KR 1020227001343 A KR1020227001343 A KR 1020227001343A KR 20227001343 A KR20227001343 A KR 20227001343A KR 102479274 B1 KR102479274 B1 KR 102479274B1
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film
layer
phase shift
reflective mask
mask blank
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KR20220012412A (ko
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요헤이 이께베
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma & Fusion (AREA)
KR1020227001343A 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Active KR102479274B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016064269A JP6739960B2 (ja) 2016-03-28 2016-03-28 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JPJP-P-2016-064269 2016-03-28
KR1020187030286A KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
PCT/JP2017/009721 WO2017169658A1 (ja) 2016-03-28 2017-03-10 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Related Parent Applications (1)

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KR1020187030286A Division KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

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KR20220012412A KR20220012412A (ko) 2022-02-03
KR102479274B1 true KR102479274B1 (ko) 2022-12-20

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KR1020227001343A Active KR102479274B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

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US (1) US10871707B2 (enExample)
JP (1) JP6739960B2 (enExample)
KR (2) KR102352732B1 (enExample)
SG (1) SG11201807251SA (enExample)
TW (2) TWI775442B (enExample)
WO (1) WO2017169658A1 (enExample)

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JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
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TWI836073B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩坯體及其製造方法
TW202104666A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
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TW202131087A (zh) 2020-01-27 2021-08-16 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
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TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
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Publication number Publication date
US10871707B2 (en) 2020-12-22
KR20180129838A (ko) 2018-12-05
SG11201807251SA (en) 2018-09-27
TWI730071B (zh) 2021-06-11
KR20220012412A (ko) 2022-02-03
KR102352732B1 (ko) 2022-01-19
JP2017181571A (ja) 2017-10-05
TW201800831A (zh) 2018-01-01
JP6739960B2 (ja) 2020-08-12
US20190079383A1 (en) 2019-03-14
TW202134776A (zh) 2021-09-16
WO2017169658A1 (ja) 2017-10-05
TWI775442B (zh) 2022-08-21

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