TWI724495B - 固晶裝置及半導體裝置的製造方法 - Google Patents

固晶裝置及半導體裝置的製造方法 Download PDF

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Publication number
TWI724495B
TWI724495B TW108129073A TW108129073A TWI724495B TW I724495 B TWI724495 B TW I724495B TW 108129073 A TW108129073 A TW 108129073A TW 108129073 A TW108129073 A TW 108129073A TW I724495 B TWI724495 B TW I724495B
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TW
Taiwan
Prior art keywords
axis direction
waveform
aforementioned
vibration
head
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TW108129073A
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English (en)
Chinese (zh)
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TW202025314A (zh
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楯充明
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日商捷進科技有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass

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TW108129073A 2018-09-19 2019-08-15 固晶裝置及半導體裝置的製造方法 TWI724495B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018174833A JP7128697B2 (ja) 2018-09-19 2018-09-19 ダイボンディング装置および半導体装置の製造方法
JP2018-174833 2018-09-19

Publications (2)

Publication Number Publication Date
TW202025314A TW202025314A (zh) 2020-07-01
TWI724495B true TWI724495B (zh) 2021-04-11

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TW108129073A TWI724495B (zh) 2018-09-19 2019-08-15 固晶裝置及半導體裝置的製造方法

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JP (1) JP7128697B2 (https=)
KR (1) KR102276898B1 (https=)
CN (2) CN110931366B (https=)
TW (1) TWI724495B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115623697B (zh) * 2022-12-06 2023-04-07 常州铭赛机器人科技股份有限公司 芯片贴装机构

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US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
TW201409596A (zh) * 2012-07-26 2014-03-01 日東電工股份有限公司 半導體晶圓的安裝方法及半導體晶圓的安裝裝置
US20150001707A1 (en) * 2013-06-28 2015-01-01 Stats Chippac, Ltd. Semiconductor Device and Method of Using Substrate With Conductive Posts and Protective Layers to Form Embedded Sensor Die Package
TW201539590A (zh) * 2014-03-13 2015-10-16 史達晶片有限公司 半導體裝置及形成微機電系統封裝的方法
TW201540809A (zh) * 2014-03-31 2015-11-01 日東電工股份有限公司 黏晶（ｄｉｅ ｂｏｎｄ）薄膜、附有切割片之黏晶薄膜、半導體裝置、及半導體裝置之製造方法
TW201545886A (zh) * 2014-01-27 2015-12-16 Corning Inc 用於薄片與載體之受控制接合的物件及方法
US20170110599A1 (en) * 2011-09-15 2017-04-20 STATS ChipPAC Pte. Ltd. Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
TW201725492A (zh) * 2015-12-24 2017-07-16 摩達伊諾琴股份有限公司 複合裝置以及包含該複合裝置的電子裝置
TW201825298A (zh) * 2016-08-31 2018-07-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法

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US7311004B2 (en) * 2003-03-10 2007-12-25 Capstan Ag Systems, Inc. Flow control and operation monitoring system for individual spray nozzles
US20040204777A1 (en) * 2003-04-14 2004-10-14 Alon Harpaz Precision motion control using feed forward of acceleration
JP2005340780A (ja) 2004-04-27 2005-12-08 Matsushita Electric Ind Co Ltd 電子部品装着装置および電子部品装着方法
US9802225B2 (en) * 2005-06-27 2017-10-31 General Vibration Corporation Differential haptic guidance for personal navigation
WO2009037751A1 (ja) * 2007-09-19 2009-03-26 Murata Manufacturing Co., Ltd. 複合センサおよび加速度センサ
JP5652155B2 (ja) * 2010-11-24 2015-01-14 セイコーエプソン株式会社 振動片、センサーユニット、電子機器、振動片の製造方法、および、センサーユニットの製造方法
JP5320420B2 (ja) 2011-02-18 2013-10-23 株式会社日立ハイテクインスツルメンツ モータ制御装置およびモータ制御方法
JP5713787B2 (ja) * 2011-04-28 2015-05-07 芝浦メカトロニクス株式会社 電子部品の実装装置
JP5705052B2 (ja) * 2011-07-26 2015-04-22 株式会社新川 ダイボンディング装置
US9162880B2 (en) * 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
KR20140118792A (ko) * 2013-03-29 2014-10-08 세이코 엡슨 가부시키가이샤 진동 소자, 진동자, 발진기, 전자 기기, 센서, 및 이동체
JP6276545B2 (ja) * 2013-09-18 2018-02-07 ファスフォードテクノロジ株式会社 ダイボンダ
JP6337395B2 (ja) * 2014-05-09 2018-06-06 パナソニックＩｐマネジメント株式会社 入出力操作装置
JP6247965B2 (ja) * 2014-03-12 2017-12-13 ファスフォードテクノロジ株式会社 半導体製造方法及びダイボンダ
JP6374189B2 (ja) * 2014-03-17 2018-08-15 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016995A1 (en) * 2002-07-25 2004-01-29 Kuo Shun Meen MEMS control chip integration
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
US20170110599A1 (en) * 2011-09-15 2017-04-20 STATS ChipPAC Pte. Ltd. Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
TW201409596A (zh) * 2012-07-26 2014-03-01 日東電工股份有限公司 半導體晶圓的安裝方法及半導體晶圓的安裝裝置
US20150001707A1 (en) * 2013-06-28 2015-01-01 Stats Chippac, Ltd. Semiconductor Device and Method of Using Substrate With Conductive Posts and Protective Layers to Form Embedded Sensor Die Package
TW201545886A (zh) * 2014-01-27 2015-12-16 Corning Inc 用於薄片與載體之受控制接合的物件及方法
TW201539590A (zh) * 2014-03-13 2015-10-16 史達晶片有限公司 半導體裝置及形成微機電系統封裝的方法
TW201540809A (zh) * 2014-03-31 2015-11-01 日東電工股份有限公司 黏晶（ｄｉｅ ｂｏｎｄ）薄膜、附有切割片之黏晶薄膜、半導體裝置、及半導體裝置之製造方法
TW201725492A (zh) * 2015-12-24 2017-07-16 摩達伊諾琴股份有限公司 複合裝置以及包含該複合裝置的電子裝置
TW201825298A (zh) * 2016-08-31 2018-07-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法

Also Published As

Publication number Publication date
JP2020047760A (ja) 2020-03-26
CN117393466A (zh) 2024-01-12
TW202025314A (zh) 2020-07-01
KR102276898B1 (ko) 2021-07-14
KR20200033176A (ko) 2020-03-27
JP7128697B2 (ja) 2022-08-31
CN110931366B (zh) 2023-10-31
CN110931366A (zh) 2020-03-27

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