TWI724138B - 脆性材料基板之雷射加工方法及雷射加工裝置 - Google Patents

脆性材料基板之雷射加工方法及雷射加工裝置 Download PDF

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Publication number
TWI724138B
TWI724138B TW106108875A TW106108875A TWI724138B TW I724138 B TWI724138 B TW I724138B TW 106108875 A TW106108875 A TW 106108875A TW 106108875 A TW106108875 A TW 106108875A TW I724138 B TWI724138 B TW I724138B
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TW
Taiwan
Prior art keywords
laser beam
material substrate
processing
brittle material
laser
Prior art date
Application number
TW106108875A
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English (en)
Chinese (zh)
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TW201803678A (zh
Inventor
國生智史
前田憲一
Original Assignee
日商三星鑽石工業股份有限公司
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Application filed by 日商三星鑽石工業股份有限公司 filed Critical 日商三星鑽石工業股份有限公司
Publication of TW201803678A publication Critical patent/TW201803678A/zh
Application granted granted Critical
Publication of TWI724138B publication Critical patent/TWI724138B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
TW106108875A 2016-07-29 2017-03-17 脆性材料基板之雷射加工方法及雷射加工裝置 TWI724138B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016149323A JP6810951B2 (ja) 2016-07-29 2016-07-29 脆性材料基板のレーザー加工方法およびレーザー加工装置
JP??2016-149323 2016-07-29

Publications (2)

Publication Number Publication Date
TW201803678A TW201803678A (zh) 2018-02-01
TWI724138B true TWI724138B (zh) 2021-04-11

Family

ID=61075511

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106108875A TWI724138B (zh) 2016-07-29 2017-03-17 脆性材料基板之雷射加工方法及雷射加工裝置

Country Status (4)

Country Link
JP (1) JP6810951B2 (ja)
KR (1) KR102311128B1 (ja)
CN (1) CN107662054B (ja)
TW (1) TWI724138B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115087512A (zh) * 2020-02-10 2022-09-20 三菱电机株式会社 激光加工方法及激光加工装置
CN116673618A (zh) * 2023-07-07 2023-09-01 珠海市申科谱工业科技有限公司 医疗塑料导管激光打孔工艺

Citations (3)

* Cited by examiner, † Cited by third party
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JP2003181668A (ja) * 2001-11-30 2003-07-02 Matsushita Electric Ind Co Ltd ピコ秒レーザ微細加工装置、ビーム光強度制御装置、レーザフライス加工方法、ビーム光強度分布制御方法、マイクロフィルタ設計方法、反射角補正方法、ヒステリシス効果補正方法、及び走査ミラー操作方法
JP2007038287A (ja) * 2005-08-05 2007-02-15 Sumitomo Heavy Ind Ltd レーザ加工方法及びレーザ加工装置
JP2011011917A (ja) * 2009-06-30 2011-01-20 Mitsuboshi Diamond Industrial Co Ltd レーザ光によるガラス基板加工装置

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AU2001249140A1 (en) * 2000-09-20 2002-04-02 Electro Scientific Industries, Inc. Uv laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses
DE10207288B4 (de) * 2002-02-21 2005-05-04 Newson Engineering Nv Verfahren zum Bohren von Löchern mittels eines Laserstrahls in einem Substrat, insbesondere in einem elektrischen Schaltungsubstrat
JP2005021917A (ja) * 2003-06-30 2005-01-27 Sumitomo Heavy Ind Ltd 樹脂層への穴あけ方法
JP2010024064A (ja) * 2008-07-15 2010-02-04 Seiko Epson Corp 構造体の製造方法、液滴吐出ヘッド
CN101462204A (zh) * 2009-01-16 2009-06-24 华中科技大学 卷烟接装纸激光打孔方法和设备
JP4734437B2 (ja) * 2009-04-17 2011-07-27 沓名 宗春 繊維強化複合材料のレーザ加工方法
TWI395630B (zh) * 2009-06-30 2013-05-11 Mitsuboshi Diamond Ind Co Ltd 使用雷射光之玻璃基板加工裝置
CN101610643B (zh) * 2009-07-14 2010-12-01 华中科技大学 一种激光加工盲孔的方法
JP2012071325A (ja) * 2010-09-28 2012-04-12 Seiko Epson Corp 基板の加工方法
JP2013146780A (ja) * 2012-01-23 2013-08-01 Mitsuboshi Diamond Industrial Co Ltd 脆性材料基板のレーザ加工方法
WO2013128994A1 (en) * 2012-02-10 2013-09-06 Asahi Glass Company, Limited A device for drilling a substrate using a plurality of dc voltage output; method of drilling a substrate using such device
CN203124973U (zh) * 2012-12-27 2013-08-14 重庆川仪自动化股份有限公司 用于激光打孔的自动上料夹具
JP6162975B2 (ja) * 2013-02-22 2017-07-12 株式会社フジクラ 微細孔を備えた基板の製造方法
FR3012059B1 (fr) * 2013-10-17 2016-01-08 Centre Nat Rech Scient Methode et dispositif de micro-usinage par laser
CN105669014B (zh) * 2014-11-21 2018-12-28 大族激光科技产业集团股份有限公司 一种采用激光刻划玻璃加工方法
CN104759754B (zh) * 2015-04-14 2016-09-14 大族激光科技产业集团股份有限公司 一种应用于圆管材料的激光加工设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003181668A (ja) * 2001-11-30 2003-07-02 Matsushita Electric Ind Co Ltd ピコ秒レーザ微細加工装置、ビーム光強度制御装置、レーザフライス加工方法、ビーム光強度分布制御方法、マイクロフィルタ設計方法、反射角補正方法、ヒステリシス効果補正方法、及び走査ミラー操作方法
JP2007038287A (ja) * 2005-08-05 2007-02-15 Sumitomo Heavy Ind Ltd レーザ加工方法及びレーザ加工装置
JP2011011917A (ja) * 2009-06-30 2011-01-20 Mitsuboshi Diamond Industrial Co Ltd レーザ光によるガラス基板加工装置

Also Published As

Publication number Publication date
KR102311128B1 (ko) 2021-10-12
CN107662054A (zh) 2018-02-06
JP2018015798A (ja) 2018-02-01
KR20180013680A (ko) 2018-02-07
CN107662054B (zh) 2021-06-18
TW201803678A (zh) 2018-02-01
JP6810951B2 (ja) 2021-01-13

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