TWI715082B - 使用可流動cvd對用於光學部件之微米/奈米結構所進行之隙縫填充 - Google Patents
使用可流動cvd對用於光學部件之微米/奈米結構所進行之隙縫填充 Download PDFInfo
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- TWI715082B TWI715082B TW108122573A TW108122573A TWI715082B TW I715082 B TWI715082 B TW I715082B TW 108122573 A TW108122573 A TW 108122573A TW 108122573 A TW108122573 A TW 108122573A TW I715082 B TWI715082 B TW I715082B
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- Prior art keywords
- layer
- refractive index
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- oxide
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0883—Mirrors with a refractive index gradient
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/017—Head mounted
- G02B27/0172—Head mounted characterised by optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4272—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having plural diffractive elements positioned sequentially along the optical path
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/0101—Head-up displays characterised by optical features
- G02B27/0103—Head-up displays characterised by optical features comprising holographic elements
- G02B2027/0109—Head-up displays characterised by optical features comprising holographic elements comprising details concerning the making of holograms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Optical Integrated Circuits (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862692255P | 2018-06-29 | 2018-06-29 | |
US62/692,255 | 2018-06-29 |
Publications (2)
Publication Number | Publication Date |
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TW202001349A TW202001349A (zh) | 2020-01-01 |
TWI715082B true TWI715082B (zh) | 2021-01-01 |
Family
ID=69008079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108122573A TWI715082B (zh) | 2018-06-29 | 2019-06-27 | 使用可流動cvd對用於光學部件之微米/奈米結構所進行之隙縫填充 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20200003937A1 (fr) |
EP (1) | EP3814811A4 (fr) |
JP (1) | JP7328264B2 (fr) |
KR (1) | KR20210014749A (fr) |
CN (1) | CN112384831B (fr) |
TW (1) | TWI715082B (fr) |
WO (1) | WO2020009748A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021233877A1 (fr) * | 2020-05-18 | 2021-11-25 | Interdigital Ce Patent Holdings, Sas | Réseaux de diffraction transmissifs et réfléchissants en matériau à indice de réfraction élevé à uniformité élevée |
CN113885106B (zh) * | 2021-11-09 | 2023-03-24 | 深圳迈塔兰斯科技有限公司 | 超透镜增透膜的设计方法、装置及电子设备 |
WO2024084965A1 (fr) * | 2022-10-18 | 2024-04-25 | 東京エレクトロン株式会社 | Procédé de formation de réseau de diffraction |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105575768A (zh) * | 2014-10-29 | 2016-05-11 | 应用材料公司 | 可流动膜固化穿透深度改善和应力调谐 |
US9355886B2 (en) * | 2010-04-15 | 2016-05-31 | Novellus Systems, Inc. | Conformal film deposition for gapfill |
TW201728777A (zh) * | 2015-10-22 | 2017-08-16 | 應用材料股份有限公司 | 沉積包含SiO及SiN之可流動薄膜的方法 |
TW201734258A (zh) * | 2015-11-16 | 2017-10-01 | 蘭姆研究公司 | 紫外光可流動介電質用設備 |
US20170294339A1 (en) * | 2016-04-12 | 2017-10-12 | Tokyo Electron Limited | METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES |
TW201821432A (zh) * | 2016-11-01 | 2018-06-16 | 美商慧盛材料美國責任有限公司 | 製造用於填充表面特徵的低k膜的前驅物及流動cvd方法 |
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US4827870A (en) * | 1987-10-05 | 1989-05-09 | Honeywell Inc. | Apparatus for applying multilayer optical interference coating on complex curved substrates |
US6531193B2 (en) * | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6161500A (en) * | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6559026B1 (en) * | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US6762880B2 (en) * | 2001-02-21 | 2004-07-13 | Ibsen Photonics A/S | Grating structures and methods of making the grating structures |
US7790634B2 (en) | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
US7498273B2 (en) | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
US20100304174A1 (en) | 2007-07-19 | 2010-12-02 | Corus Staal Bv | Strip of steel having a variable thickness in length direction |
US7943531B2 (en) | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
KR100970935B1 (ko) * | 2009-05-21 | 2010-07-20 | 주식회사 미뉴타텍 | 광학필름 및 그 제조방법과 이를 이용한 액정표시장치용 백라이트 유니트 |
US9257274B2 (en) * | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
JP5929013B2 (ja) * | 2011-05-25 | 2016-06-01 | 凸版印刷株式会社 | 着色偽造防止構造体および着色偽造防止媒体 |
JP6199292B2 (ja) | 2011-09-23 | 2017-09-20 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | プラズマ活性化されるコンフォーマル誘電体膜 |
WO2014085511A2 (fr) | 2012-11-27 | 2014-06-05 | The Regents Of The University Of California | Matière métallique/organique polymérisée pour des dispositifs photoniques imprimables |
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KR102259262B1 (ko) * | 2016-07-19 | 2021-05-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 유동성 실리콘-함유 막들의 증착 |
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2018
- 2018-09-04 US US16/120,707 patent/US20200003937A1/en not_active Abandoned
-
2019
- 2019-05-17 JP JP2020573302A patent/JP7328264B2/ja active Active
- 2019-05-17 EP EP19829802.8A patent/EP3814811A4/fr active Pending
- 2019-05-17 CN CN201980043803.6A patent/CN112384831B/zh active Active
- 2019-05-17 KR KR1020217002950A patent/KR20210014749A/ko not_active Application Discontinuation
- 2019-05-17 WO PCT/US2019/032985 patent/WO2020009748A1/fr unknown
- 2019-06-27 TW TW108122573A patent/TWI715082B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9355886B2 (en) * | 2010-04-15 | 2016-05-31 | Novellus Systems, Inc. | Conformal film deposition for gapfill |
CN105575768A (zh) * | 2014-10-29 | 2016-05-11 | 应用材料公司 | 可流动膜固化穿透深度改善和应力调谐 |
TW201728777A (zh) * | 2015-10-22 | 2017-08-16 | 應用材料股份有限公司 | 沉積包含SiO及SiN之可流動薄膜的方法 |
TW201734258A (zh) * | 2015-11-16 | 2017-10-01 | 蘭姆研究公司 | 紫外光可流動介電質用設備 |
US20170294339A1 (en) * | 2016-04-12 | 2017-10-12 | Tokyo Electron Limited | METHODS FOR SiO2 FILLING OF FINE RECESSED FEATURES AND SELECTIVE SiO2 DEPOSITION ON CATALYTIC SURFACES |
TW201821432A (zh) * | 2016-11-01 | 2018-06-16 | 美商慧盛材料美國責任有限公司 | 製造用於填充表面特徵的低k膜的前驅物及流動cvd方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3814811A4 (fr) | 2022-03-16 |
KR20210014749A (ko) | 2021-02-09 |
US20200003937A1 (en) | 2020-01-02 |
CN112384831A (zh) | 2021-02-19 |
EP3814811A1 (fr) | 2021-05-05 |
JP7328264B2 (ja) | 2023-08-16 |
TW202001349A (zh) | 2020-01-01 |
CN112384831B (zh) | 2023-08-01 |
WO2020009748A1 (fr) | 2020-01-09 |
JP2021530730A (ja) | 2021-11-11 |
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