JP7328264B2 - 光学部品のマイクロ/ナノ構造を間隙充填するための流動性cvdの使用 - Google Patents
光学部品のマイクロ/ナノ構造を間隙充填するための流動性cvdの使用 Download PDFInfo
- Publication number
- JP7328264B2 JP7328264B2 JP2020573302A JP2020573302A JP7328264B2 JP 7328264 B2 JP7328264 B2 JP 7328264B2 JP 2020573302 A JP2020573302 A JP 2020573302A JP 2020573302 A JP2020573302 A JP 2020573302A JP 7328264 B2 JP7328264 B2 JP 7328264B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- processing region
- atomic oxygen
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0883—Mirrors with a refractive index gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/017—Head mounted
- G02B27/0172—Head mounted characterised by optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4272—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having plural diffractive elements positioned sequentially along the optical path
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/0101—Head-up displays characterised by optical features
- G02B27/0103—Head-up displays characterised by optical features comprising holographic elements
- G02B2027/0109—Head-up displays characterised by optical features comprising holographic elements comprising details concerning the making of holograms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Optical Integrated Circuits (AREA)
Description
[0002]仮想現実は、概して、ユーザが見かけ上の物理的存在を有するコンピュータが生成したシミュレート環境であると考えられる。仮想現実体験は、3Dで生成され、実際の環境に取って代わる仮想現実環境を表示するためのレンズとしての目に近いディスプレイパネルを有する眼鏡又は他の着用可能なディスプレイデバイスといった、ヘッド装着型ディスプレイ(HMD)で見ることができる。
Claims (8)
- 拡張現実又は仮想現実ディスプレイデバイスの光学部品を形成するための方法であって、
拡張現実または仮想現実ディスプレイデバイスの前記光学部品の導波器又は平坦レンズを形成することであって、前記導波器又は前記平坦レンズは、処理領域に配置された基板の上に、それぞれ高さ方向に細長い形状を有し、互いに平行であって規則的に並べられた複数の回折格子及び複数の間隙を有するパターンを有し、1.7から2.4の範囲の第1の屈折率を有し、かつ酸化チタン、酸化タンタル、酸化ジルコニウム、酸化ハフニウム、又は酸化ニオブを含む、拡張現実または仮想現実ディスプレイデバイスの前記光学部品の導波器又は平坦レンズを形成することと、
100℃未満の温度で0.1Torrと10Torrの間の圧力で流動性化学気相堆積処理によって、前記導波器又は前記平坦レンズの前記パターンの上に直接、層を形成することであって、前記層が、1.1から1.5の範囲の第2の屈折率を有し、多孔性二酸化ケイ素又は石英を含む層を形成すること、
を含み、
前記流動性化学気相堆積処理は、
原子状酸素前駆体を生成することと、
前記原子状酸素前駆体を前記処理領域に導入することであって、シリコン前駆体は、前記原子状酸素前駆体と前記シリコン前駆体が前記処理領域に導入される前に混合されないように、前記処理領域に配置される、前記原子状酸素前駆体を前記処理領域に導入すること、
を含む、方法。 - 前記層をアニーリングすることを更に含む、請求項1に記載の方法。
- 前記層をアニーリングすることが、前記層を300℃から1000℃まで加熱することを含む、請求項2に記載の方法。
- 拡張現実又は仮想現実ディスプレイデバイスの光学部品を形成するための方法であって、
拡張現実または仮想現実ディスプレイデバイスの前記光学部品の導波器又は平坦レンズを形成することであって、前記導波器又は前記平坦レンズは、処理領域に配置された基板の第1の表面上に、それぞれ高さ方向に細長い形状を有し、互いに平行であって規則的に並べられた複数の回折格子及び複数の間隙を有する第1のパターンを有し、1.7から2.4の範囲の第1の屈折率を有し、かつ酸化チタン、酸化タンタル、酸化ジルコニウム、酸化ハフニウム、又は酸化ニオブを含む、拡張現実または仮想現実ディスプレイデバイスの前記光学部品の導波器又は平坦レンズを形成することと、
100℃未満の温度で0.1Torrと10Torrの間の圧力で流動性化学気相堆積処理によって、前記導波器又は前記平坦レンズの前記第1のパターンの上に直接、層を形成することであって、前記層が、1.1から1.5の範囲の第2の屈折率を有し、多孔性二酸化ケイ素又は石英を含む層を形成すること、
を含み、
前記流動性化学気相堆積処理は、
原子状酸素前駆体を生成することと、
前記原子状酸素前駆体を前記処理領域に導入することであって、シリコン前駆体は、前記原子状酸素前駆体と前記シリコン前駆体が前記処理領域に導入される前に混合されないように、前記処理領域に配置される、前記原子状酸素前駆体を前記処理領域に導入すること、を含む、方法。 - 前記導波器又は前記平坦レンズが、電子ビームリソグラフィ又はナノインプリントリソグラフィによって前記基板の前記第1の表面上に形成される、請求項4に記載の方法。
- 前記基板の第2の表面上に第3の屈折率を有する第2の層を形成することを更に含み、前記第2の層が第2のパターンを有する、請求項4に記載の方法。
- 前記流動性化学気相堆積処理によって前記第2の層の上に前記第3の屈折率よりも小さい第4の屈折率を有する第3の層を形成すること
を更に含む、請求項6に記載の方法。 - 前記第2のパターンが、前記第1のパターンとは異なる、請求項7に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862692255P | 2018-06-29 | 2018-06-29 | |
US62/692,255 | 2018-06-29 | ||
PCT/US2019/032985 WO2020009748A1 (en) | 2018-06-29 | 2019-05-17 | Using flowable cvd to gap fill micro/nano structures for optical components |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021530730A JP2021530730A (ja) | 2021-11-11 |
JP7328264B2 true JP7328264B2 (ja) | 2023-08-16 |
Family
ID=69008079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020573302A Active JP7328264B2 (ja) | 2018-06-29 | 2019-05-17 | 光学部品のマイクロ/ナノ構造を間隙充填するための流動性cvdの使用 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20200003937A1 (ja) |
EP (1) | EP3814811A4 (ja) |
JP (1) | JP7328264B2 (ja) |
KR (1) | KR20210014749A (ja) |
CN (1) | CN112384831B (ja) |
TW (1) | TWI715082B (ja) |
WO (1) | WO2020009748A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021233877A1 (en) * | 2020-05-18 | 2021-11-25 | Interdigital Ce Patent Holdings, Sas | High-uniformity high refractive index material transmissive and reflective diffraction gratings |
CN113885106B (zh) * | 2021-11-09 | 2023-03-24 | 深圳迈塔兰斯科技有限公司 | 超透镜增透膜的设计方法、装置及电子设备 |
WO2024084965A1 (ja) * | 2022-10-18 | 2024-04-25 | 東京エレクトロン株式会社 | 回折格子の形成方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009539265A (ja) | 2006-05-30 | 2009-11-12 | アプライド マテリアルズ インコーポレイテッド | ギャップ充填と共形のフィルムの適用のために低k膜を堆積させ硬化する方法 |
JP2010507259A (ja) | 2006-10-16 | 2010-03-04 | アプライド マテリアルズ インコーポレイテッド | Sti用の二酸化シリコンの高品質誘電体膜の形成:harpii−遠隔プラズマ増強型堆積プロセス−のための異なるシロキサンベースの前駆物質の使用 |
JP2011504651A (ja) | 2007-10-22 | 2011-02-10 | アプライド マテリアルズ インコーポレイテッド | 基板上に酸化ケイ素層を形成する方法 |
JP2014532304A (ja) | 2011-09-23 | 2014-12-04 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | プラズマ活性化されるコンフォーマル誘電体膜 |
US20170030773A1 (en) | 2015-07-29 | 2017-02-02 | Samsung Electronics Co., Ltd. | Spectrometer including metasurface |
JP2017195371A (ja) | 2016-04-12 | 2017-10-26 | 東京エレクトロン株式会社 | 微細凹状フィーチャのSiO2充填及び触媒表面上への選択的SiO2堆積のための方法 |
US20170322418A1 (en) | 2016-05-06 | 2017-11-09 | Magic Leap, Inc. | Metasurfaces with asymmetric gratings for redirecting light and methods for fabricating |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4827870A (en) * | 1987-10-05 | 1989-05-09 | Honeywell Inc. | Apparatus for applying multilayer optical interference coating on complex curved substrates |
US6531193B2 (en) * | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6161500A (en) * | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6559026B1 (en) * | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US6762880B2 (en) | 2001-02-21 | 2004-07-13 | Ibsen Photonics A/S | Grating structures and methods of making the grating structures |
US20100304174A1 (en) | 2007-07-19 | 2010-12-02 | Corus Staal Bv | Strip of steel having a variable thickness in length direction |
KR100970935B1 (ko) * | 2009-05-21 | 2010-07-20 | 주식회사 미뉴타텍 | 광학필름 및 그 제조방법과 이를 이용한 액정표시장치용 백라이트 유니트 |
US9257274B2 (en) * | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
JP5929013B2 (ja) * | 2011-05-25 | 2016-06-01 | 凸版印刷株式会社 | 着色偽造防止構造体および着色偽造防止媒体 |
SG2013083241A (en) * | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
WO2014085511A2 (en) | 2012-11-27 | 2014-06-05 | The Regents Of The University Of California | Polymerized metal-organic material for printable photonic devices |
US8674470B1 (en) * | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
US9529959B2 (en) * | 2014-02-27 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for pattern correction in e-beam lithography |
US9746678B2 (en) * | 2014-04-11 | 2017-08-29 | Applied Materials | Light wave separation lattices and methods of forming light wave separation lattices |
WO2016065221A1 (en) * | 2014-10-24 | 2016-04-28 | Air Products And Chemicals, Inc. | Compositions and methods using same for deposition of silicon-containing films |
US9570287B2 (en) * | 2014-10-29 | 2017-02-14 | Applied Materials, Inc. | Flowable film curing penetration depth improvement and stress tuning |
WO2017070192A1 (en) * | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | METHODS OF DEPOSITING FLOWABLE FILMS COMPRISING SiO and SiN |
US10388546B2 (en) * | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
US11515149B2 (en) * | 2016-07-19 | 2022-11-29 | Applied Materials, Inc. | Deposition of flowable silicon-containing films |
US11735413B2 (en) * | 2016-11-01 | 2023-08-22 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-k films to fill surface features |
-
2018
- 2018-09-04 US US16/120,707 patent/US20200003937A1/en not_active Abandoned
-
2019
- 2019-05-17 JP JP2020573302A patent/JP7328264B2/ja active Active
- 2019-05-17 EP EP19829802.8A patent/EP3814811A4/en active Pending
- 2019-05-17 KR KR1020217002950A patent/KR20210014749A/ko not_active Application Discontinuation
- 2019-05-17 WO PCT/US2019/032985 patent/WO2020009748A1/en unknown
- 2019-05-17 CN CN201980043803.6A patent/CN112384831B/zh active Active
- 2019-06-27 TW TW108122573A patent/TWI715082B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009539265A (ja) | 2006-05-30 | 2009-11-12 | アプライド マテリアルズ インコーポレイテッド | ギャップ充填と共形のフィルムの適用のために低k膜を堆積させ硬化する方法 |
JP2010507259A (ja) | 2006-10-16 | 2010-03-04 | アプライド マテリアルズ インコーポレイテッド | Sti用の二酸化シリコンの高品質誘電体膜の形成:harpii−遠隔プラズマ増強型堆積プロセス−のための異なるシロキサンベースの前駆物質の使用 |
JP2011504651A (ja) | 2007-10-22 | 2011-02-10 | アプライド マテリアルズ インコーポレイテッド | 基板上に酸化ケイ素層を形成する方法 |
JP2014532304A (ja) | 2011-09-23 | 2014-12-04 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | プラズマ活性化されるコンフォーマル誘電体膜 |
US20170030773A1 (en) | 2015-07-29 | 2017-02-02 | Samsung Electronics Co., Ltd. | Spectrometer including metasurface |
JP2017195371A (ja) | 2016-04-12 | 2017-10-26 | 東京エレクトロン株式会社 | 微細凹状フィーチャのSiO2充填及び触媒表面上への選択的SiO2堆積のための方法 |
US20170322418A1 (en) | 2016-05-06 | 2017-11-09 | Magic Leap, Inc. | Metasurfaces with asymmetric gratings for redirecting light and methods for fabricating |
Also Published As
Publication number | Publication date |
---|---|
JP2021530730A (ja) | 2021-11-11 |
KR20210014749A (ko) | 2021-02-09 |
TW202001349A (zh) | 2020-01-01 |
CN112384831B (zh) | 2023-08-01 |
US20200003937A1 (en) | 2020-01-02 |
EP3814811A4 (en) | 2022-03-16 |
WO2020009748A1 (en) | 2020-01-09 |
TWI715082B (zh) | 2021-01-01 |
CN112384831A (zh) | 2021-02-19 |
EP3814811A1 (en) | 2021-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7328264B2 (ja) | 光学部品のマイクロ/ナノ構造を間隙充填するための流動性cvdの使用 | |
JP4536113B2 (ja) | 光学素子の基板を直接接合するシステムおよび方法 | |
KR101515082B1 (ko) | 포토레지스트 또는 건식 에칭이 필요없는 패턴화된 하드 마스크 막의 형성(rfp)을 위한 공정 시퀀스 | |
TW541621B (en) | Method for fabricating waveguides | |
US6768828B2 (en) | Integrated optical circuit with dense planarized cladding layer | |
US10409001B2 (en) | Waveguide fabrication with sacrificial sidewall spacers | |
US6356694B1 (en) | Process for producing planar waveguide structures as well as waveguide structure | |
KR20190055180A (ko) | 구조물들의 마이크로리소그래픽 제조 | |
KR102444339B1 (ko) | 도파관 결합기들의 제조 방법 | |
CN105739013B (zh) | 一种制造平面光波导器件的方法 | |
JP5818523B2 (ja) | メソポーラスシリカ膜、メソポーラスシリカ膜を有する構造体、反射防止膜、光学部材及びそれらの製造方法 | |
TW202235931A (zh) | 具有結構及折射率漸變之光學元件及其製造方法 | |
JP2022513448A (ja) | 封入のためのpvd指向性堆積 | |
US7228045B2 (en) | Optical waveguide device and method of manufacturing same | |
JP2004301911A (ja) | 光導波路及びその製造方法並びに光導波路デバイス | |
US20020182342A1 (en) | Optical quality silica films | |
EP1273677B1 (en) | Method of depositing optical films | |
JPH11295544A (ja) | 埋込プレーナ光波回路素子の製造方法 | |
TWI835950B (zh) | 用於封裝的pvd定向沉積 | |
WO2024097774A1 (en) | Method of applying a dielectric coating on a component of an electrical device | |
TW202414012A (zh) | 波導組合器及其製造方法 | |
TW202417245A (zh) | 金屬氧化物-矽氧化物疊層膜 | |
JPH0659146A (ja) | グレーティング導波路の製造方法 | |
JP2005345952A (ja) | 光導波路部品およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210301 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210301 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220308 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220804 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221129 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230227 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230501 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230711 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230803 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7328264 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |