WO2024084965A1 - Procédé de formation de réseau de diffraction - Google Patents

Procédé de formation de réseau de diffraction Download PDF

Info

Publication number
WO2024084965A1
WO2024084965A1 PCT/JP2023/036136 JP2023036136W WO2024084965A1 WO 2024084965 A1 WO2024084965 A1 WO 2024084965A1 JP 2023036136 W JP2023036136 W JP 2023036136W WO 2024084965 A1 WO2024084965 A1 WO 2024084965A1
Authority
WO
WIPO (PCT)
Prior art keywords
diffraction grating
substrate
forming
refractive index
protrusions
Prior art date
Application number
PCT/JP2023/036136
Other languages
English (en)
Japanese (ja)
Inventor
卓也 樋口
文昭 田中
大樹 前原
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2024084965A1 publication Critical patent/WO2024084965A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • An exemplary embodiment of the present disclosure relates to a method for forming a diffraction grating.
  • Patent Document 1 A technique for forming a diffraction grating using nanoimprinting is described in Patent Document 1.
  • This disclosure provides a technique for forming a diffraction grating using a high refractive index material.
  • a method for forming a diffraction grating including protrusions on a transparent substrate includes the steps of: (a) forming a first structure on the substrate using a first material, the first structure including recesses corresponding to the protrusions of the diffraction grating; (b) providing a second material to the recesses of the first structure on the substrate to form a second structure including the diffraction grating; and (c) removing the first structure.
  • a technique can be provided for forming a diffraction grating using a high refractive index material.
  • FIG. 1 is a diagram illustrating a configuration example of a glasses-type display device. 1 is a diagram for explaining a configuration example of an optical device included in a display device. 4 is a flowchart illustrating a method of forming a diffraction grating according to a first exemplary embodiment. 1 is a flowchart illustrating an example of a method for forming a first structure using a nanoimprint technique. 5A to 5C are schematic diagrams for explaining examples of steps of a method for forming a first structure using nanoimprint technology. 1 is a flow chart illustrating an example of a method for forming a first structure using photolithography techniques.
  • FIGS. 5A to 5C are schematic diagrams for explaining examples of steps of a method for forming a first structure using a photolithography technique.
  • 10A to 10C are schematic diagrams for explaining examples of steps ST2 and ST3 in the method of forming a diffraction grating.
  • 6 is a flowchart illustrating another example of the method for forming the diffraction grating in the first exemplary embodiment.
  • 13A to 13C are schematic diagrams for explaining a step of forming a third structure.
  • 5 is a flow chart illustrating a method of forming a diffraction grating according to a second exemplary embodiment.
  • 5A to 5C are schematic diagrams for explaining each step of a method for forming a diffraction grating according to a second exemplary embodiment.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.
  • a method for forming a diffraction grating including protrusions on a transparent substrate including the steps of: (a) forming a first structure on the substrate using a first material, the first structure including recesses corresponding to the protrusions of the diffraction grating; (b) providing a second material in the recesses of the first structure on the substrate to form a second structure including the diffraction grating; and (c) removing the first structure.
  • the second material has a higher refractive index than the first material.
  • the second material has a refractive index of 2 or greater.
  • the first material includes a polymeric material.
  • the first structure is formed using nanoimprint technology or photolithography technology.
  • step (b) includes depositing a second material on the first structure and removing an upper portion of the second material to expose the first structure.
  • (d) further includes a step of providing a third material having a lower refractive index than the second material in the recesses formed by the protrusions of the diffraction grating of the second structure on the substrate by removing the first structure in step (c).
  • step (d) includes planarizing the top surface of the second structure.
  • the diffraction grating includes protrusions having an inclination angle greater than 0° and less than 90° relative to the surface of the substrate.
  • a method for forming a diffraction grating including protrusions on a transparent substrate including: (a) forming a first structure including protrusions of the diffraction grating on the substrate using a first material; (b) providing a second material in recesses formed by the protrusions of the first structure on the substrate to form a second structure including protrusions; (c) removing the first structure; and (d) providing a third material in recesses formed by the protrusions of the second structure on the substrate as a result of removing the first structure in step (c) to form a third structure including the diffraction grating.
  • the third material has a refractive index higher than the refractive indexes of the first and second materials.
  • the third material has a refractive index of 2 or greater.
  • the first material includes a polymeric material.
  • the first structure is formed using nanoimprint technology or photolithography technology.
  • step (b) includes depositing a second material on the first structure and removing an upper portion of the second material to expose the first structure.
  • step (d) includes planarizing the top surface of the third structure.
  • the diffraction grating includes protrusions having an inclination angle greater than 0° and less than 90° relative to the surface of the substrate.
  • ⁇ Example of a display device> 1 is a diagram for explaining a configuration example of a display device 500.
  • the display device 500 may be a glasses type.
  • the display device 500 may be an augmented reality (AR) glass or a mixed reality (MR) glass.
  • AR augmented reality
  • MR mixed reality
  • the display device 500 has a function of forming image light and outputting the image light to the user's eyes.
  • FIG. 2 is a diagram for explaining an example of the configuration of an optical device included in the display device.
  • the display device 500 includes an image forming device 600 that forms image light from light from a light source, and an optical waveguide device 601 that guides the image light to the user's eyes.
  • the image forming device 600 includes a light emitting element such as an LED, a movable lens that polarizes light, and the like.
  • the image forming device 600 can be disposed on the rim 501, temple 502, endpiece 503, lens 504, or the peripheral parts thereof, of the display device (glasses) 500 shown in FIG. 1.
  • the optical waveguide device 601 may be included in the lens 504 of the display device 500. As shown in FIG. 2, in one embodiment, the optical waveguide device 601 has a substrate 700 and a diffraction grating 701 formed on the substrate 700.
  • the substrate 700 has a transmittance (transparency) that allows light to pass through.
  • An example of the substrate 700 may be a glass substrate.
  • the substrate 700 may be a substrate such as sapphire or SiC.
  • the substrate 700 may be a bare substrate, or a substrate having a structure formed on the upper surface of the bare substrate.
  • the substrate 700 can guide image light inside the substrate 700 along the surface direction of the substrate 700, and can input external light from a first surface of the substrate 700 and output it from a second surface on the opposite side.
  • a user of the display device 500 can simultaneously view an image formed by the image forming device 600 and an external image through the lens 504.
  • the diffraction grating 701 is provided at least in two places on the surface of the substrate 700.
  • the diffraction grating 701 includes a first diffraction grating section 710 that inputs the image light output from the image forming device 600, and a second diffraction grating section 711 that outputs the image light guided through the substrate 700 to the side of the user's eyes.
  • the first diffraction grating section 710 and the second diffraction grating section 711 are so-called oblique diffraction gratings.
  • the first diffraction grating section 710 and the second diffraction grating section 711 have a shape (comb shape) having multiple convex portions 701a on the substrate 700, and the convex portions 701a are configured to protrude obliquely with respect to the substrate 700.
  • the convex portions 701a of the first diffraction grating section 710 and the second diffraction grating section 711 have an inclination angle ⁇ that is greater than 0° and less than 90° with respect to the surface of the substrate 700.
  • the convex portions 701a of the first diffraction grating portion 710 and the second diffraction grating portion 711 may be not oblique diffraction gratings but may have an angle of 90° with respect to the surface of the substrate 700.
  • the first diffraction grating portion 710 and the second diffraction grating portion 711 are provided on one surface of the substrate 700.
  • the first diffraction grating portion 710 and the second diffraction grating portion 711 are provided on the surface of the substrate 700 on the side where the user's eyes are located.
  • the first diffraction grating portion 710 and the second diffraction grating portion 711 may be provided on both surfaces of the substrate 700.
  • a method for forming the diffraction grating 701 including the convex portions 701a on the substrate 700 will be described.
  • First Exemplary Embodiment 3 is a flow chart illustrating a method of forming a diffraction grating according to a first exemplary embodiment.
  • the method of forming a diffraction grating includes forming a first structure from a first material (ST1), forming a second structure from a second material (ST2), and removing the first structure (ST3).
  • a first structure having a shape that is an inversion of the shape of the target diffraction grating 701 is formed. That is, in one embodiment, in step ST1, a first structure including recesses that correspond to the protrusions 701a of the diffraction grating 701 is formed.
  • the first structure is made of a first material. In one embodiment, the first structure is formed using nanoimprint technology or photolithography technology.
  • Fig. 4 is a flow chart showing an example of a method for forming a first structure using nanoimprint technology.
  • Fig. 5 is a schematic diagram for explaining an example of each step of the method for forming a first structure using nanoimprint technology.
  • step ST1 includes a step of preparing a substrate (ST1-1a), a step of forming a film (ST1-2a), a step of molding a first structure (ST1-3a), and a step of removing a residual film (ST1-4a).
  • a substrate 700 is prepared as shown in FIG. 5(a).
  • the substrate 700 is a transparent substrate.
  • the substrate 700 may be a bare substrate or a bare substrate on which a structure is formed.
  • a film 800 including a first material is formed on a substrate 700.
  • the first material includes a polymer material such as a resin.
  • the first material may have a refractive index of less than 2, for example, 1.5 or less.
  • the film 800 may be formed by a spin coating method or an inkjet method.
  • the film 800 may be a resist film.
  • step ST1-3a as shown in FIG. 5(c), the film 800 is pressed against a mold 801 having an uneven shape. With the mold 801 pressed against it, the film 800 is hardened by irradiation with ultraviolet light, heat treatment, or the like. As a result, the film 800 becomes uneven, and the first structure 810 is formed. At this time, excess residual film 802 remains on the substrate 700.
  • step ST1-4a as shown in FIG. 5(d), the residual film 802 remaining on the substrate 700 is removed.
  • the residual film 802 may be removed by etching.
  • a first structure 810 made of a first material is formed on the substrate 700.
  • the first structure 810 has a shape that is an inversion of the shape of the target diffraction grating 701.
  • the first structure 810 has recesses 810a that correspond to the protrusions 701a of the diffraction grating 701.
  • Fig. 6 is a flow chart showing an example of a method for forming a first structure using a photolithography technique.
  • Fig. 7 is a schematic diagram for explaining an example of each step of the method for forming a first structure using a photolithography technique.
  • step ST1 includes a step of preparing a substrate (ST1-1b), a step of forming a film (ST1-2b), a step of forming a mask film (ST1-3b), a step of etching the film (ST1-4b), and a step of removing the mask film (ST1-5b).
  • a substrate 700 is prepared as shown in FIG. 7(a).
  • the substrate 700 is a transparent substrate.
  • the substrate 700 may be a bare substrate or a bare substrate on which a structure is formed.
  • a film 800 including a first material is formed on a substrate 700.
  • the first material includes a polymer material such as a resin.
  • the first material may have a refractive index of less than 2, for example, 1.5 or less.
  • the film 800 may be formed by a spin coating method or an inkjet method.
  • the film 800 may be a resist film.
  • a mask film 820 having a predetermined pattern is formed on the film 800.
  • the mask film 820 may be formed by a photolithography method.
  • step ST1-4b as shown in FIG. 7(d), the film 800 is etched using the mask film 820 as a mask. This removes the exposed portions of the film 800 where the mask film 820 is not present, and a groove is formed in the film 800, forming the first structure 810.
  • the etching may be plasma etching or ion beam etching.
  • step ST1-5b as shown in FIG. 7(e), the mask film 820 is removed.
  • the mask film 820 may be removed by etching.
  • a first structure 810 having a recess 810a is formed on the substrate 700.
  • a second material is provided in the recess 810a (space) of the first structure 810 on the substrate 700, and a second structure having a protrusion 701a of the target diffraction grating 701 is formed.
  • the second material has a refractive index higher than that of the first material constituting the first structure 810.
  • the second material has a high refractive index of 2 or more.
  • the second material may be a material other than a polymer.
  • the second material may be an inorganic material.
  • the second material may be TiOx, ZrOx, HfOx, or SiN, or may be a mixture of two or more selected from them.
  • the second material may be a further mixture of SiO2 and AlO2.
  • FIG. 8 is a schematic diagram for explaining an example of steps ST2 and ST3 of the method for forming a diffraction grating.
  • a film of the second material 830 is formed on the first structure 810.
  • the second material 830 penetrates into the recess 810a of the first structure 810 and is also deposited on the upper surface of the first structure 810.
  • the film of the second material 830 may be formed by a sputtering method, a CVD method, an ALD (Atomic Layer Deposition) method, an evaporation method, or a spin coating method.
  • step ST2 the upper portion of the deposited second material 830 is removed to expose the upper surface of the first structure 810.
  • the upper surface of the second material 830 may be polished and planarized to expose the upper surface of the first structure 810.
  • the second material 830 becomes the second structure 830 having the convex portion 701a of the target diffraction grating 701. In this way, the second structure 830 having the convex portion 701a is formed in the concave portion 810a of the first structure 810 on the substrate 700.
  • step ST3 the first structure 810 is removed as shown in FIG. 8(c).
  • the first structure 810 may be removed by etching, ashing, or liquid cleaning.
  • the second structure 830 remains on the substrate 700, and a diffraction grating 701 having a target shape is formed.
  • a method for forming a diffraction grating 701 including a convex portion 701a on a substrate 700 includes the steps of: (a) forming a first structure 810 including a concave portion 810a corresponding to the convex portion 701a of a target diffraction grating on the substrate 700 using a first material; (b) providing a second material having a higher refractive index than the first material to the concave portion 810a of the first structure 810 on the substrate 700 to form a second structure 830 including the convex portion 701a of the diffraction grating 701; and (c) removing the first structure 810.
  • the first structure 810 is formed using a first material that is easy to mold, and then the second structure 830 is formed using a second material having a high refractive index material, and the first structure 810 is removed to form the diffraction grating 701.
  • a diffraction grating can be formed using a high refractive index material.
  • the degree of freedom of the shape of the diffraction grating is improved.
  • the first material contains a polymer material, so that the first structure 810 can be easily formed using a nanoimprinting method or the like.
  • the second material has a refractive index of 2 or more, so that a diffraction grating with a high refractive index can be realized.
  • the diffraction grating 701 includes a convex portion 701a having an inclination angle ⁇ of more than 0° and less than 90° with respect to the surface of the substrate 700.
  • the diffraction grating 701 has a comb-tooth shape having a plurality of convex portions 701a that protrude obliquely with respect to the substrate 700.
  • the diffraction grating 701 may have an angle of 90° with respect to the surface of the substrate 700. According to the method for forming a diffraction grating in this exemplary embodiment, the convex portions 701 of the diffraction grating 701 can be easily formed even if they are oblique.
  • a diffraction grating when a diffraction grating is formed by performing dry etching or the like on a film on a substrate, the direction of the etching is determined by the pull-in electric field perpendicular to the substrate, so it is difficult to form a structure having convex portions oblique to the substrate.
  • a diffraction grating is formed by performing wet etching on a film on a substrate, there is no anisotropy of the etching, and it is not possible to form a structure having oblique convex portions.
  • the method for forming a diffraction grating may further include a step (ST4) of forming a third structure with a third material.
  • FIG. 10 is a schematic diagram for explaining an example of step ST4.
  • a third material having a lower refractive index than the second material is provided in a recess (space) formed by the protrusion 701a of the second structure 830 on the substrate 700, to form a third structure.
  • the third material may be a material having a lower refractive index than the second material.
  • the third material may have a refractive index of less than 2.
  • the third material may be an inorganic material.
  • the third material may be SiO2, Al2O3, or a mixture thereof.
  • a film of a third material 840 is formed on the second structure 830.
  • the third material 840 penetrates into the recesses 830a formed by the protrusions 701a of the second structure 830, and is also deposited on the upper surface of the second structure 830.
  • the film of the third material 840 may be formed by a sputtering method, a CVD method, an ALD (Atomic Layer Deposition) method, an evaporation method, or a spin coating method.
  • step ST4 the upper portion of the deposited third material 840 is removed to expose the upper surface of the second structure 830.
  • the upper surfaces of the third material 840 and the second structure 830 may be polished and planarized to expose the upper surface of the second structure 830.
  • the third material 840 becomes the third structure. In this way, the third structure 840 is formed in the recess 830a formed by the protrusion 701a of the second structure 830 on the substrate 700.
  • Second Exemplary Embodiment 11 is a flowchart showing a method for forming a diffraction grating according to a second exemplary embodiment.
  • a diffraction grating 701 similar to that of the first exemplary embodiment is formed.
  • FIG. 12 is a schematic diagram for explaining each step of the method for forming a diffraction grating according to the second exemplary embodiment.
  • the method for forming a diffraction grating includes a step (ST1a) of forming a first structure with a first material, a step (ST2a) of forming a second structure with a second material, a step (ST3a) of removing the first structure, and a step (ST4a) of forming a third structure with a third material.
  • a first structure 810 is formed that includes a convex portion 810b having a shape similar to that of the convex portion 701a of the target diffraction grating 701.
  • the first structure 810 is formed using nanoimprint technology or photolithography technology. The method of forming the first structure 810 using nanoimprint technology or photolithography technology may be the same as that of the first exemplary embodiment described above.
  • a second material is provided in a recess (space) formed by a protrusion 810b of a first structure 810 on a substrate 700, and a second structure having a protrusion 830b is formed.
  • the second material has a low refractive index of less than 2.
  • the second material may be a material other than a polymer.
  • the second material may be an inorganic material.
  • the second material may be SiO2, Al2O3, or a mixture thereof.
  • a film of the second material 830 is formed on the first structure 810.
  • the second material 830 penetrates into the recesses formed by the protrusions 810b of the first structure 810, and is also deposited on the upper surface of the first structure 810.
  • the film of the second material 830 may be formed by a sputtering method, a CVD method, an ALD (Atomic Layer Deposition) method, an evaporation method, or a spin coating method.
  • step ST2 the upper portion of the deposited second material 830 is removed to expose the upper surface of the first structure 810.
  • the upper surface of the second material 830 may be polished and planarized to expose the upper surface of the first structure 810.
  • the second material 830 becomes the second structure 830 having the convex portion 830b. In this way, the second structure 830 including the convex portion 830b is formed in the concave portion formed by the convex portion 810b of the first structure 810 on the substrate 700.
  • step ST3 the first structure 810 is removed as shown in FIG. 12(d).
  • the first structure 810 may be removed by etching, ashing, or liquid cleaning.
  • the second structure 830 having the protrusion 830b remains on the substrate 700.
  • a third material is provided in a recess (space) formed by the protrusion 830b of the second structure 830 on the substrate 700 to form a third structure including the protrusion 701a of the target diffraction grating 701.
  • the third material has a refractive index higher than the refractive index of the first material constituting the first structure 810 and the second material constituting the second structure 830.
  • the third material has a high refractive index of 2 or more.
  • the third material may be a material other than a polymer.
  • the third material may be an inorganic material.
  • the third material may be TiOx, ZrOx, HfOx, or SiN, or may be a mixture of two or more selected from them.
  • the third material may be a further mixture of SiO2 and AlO2.
  • a film of a third material 840 is formed on the second structure 830.
  • the third material 840 penetrates into the recesses formed by the protrusions 830b of the second structure 830, and is also deposited on the upper surface of the second structure 830.
  • the film of the third material 840 may be formed by a sputtering method, a CVD method, an ALD (Atomic Layer Deposition) method, an evaporation method, or a spin coating method.
  • the upper portion of the deposited third material 840 is removed to expose the upper surface of the second structure 830.
  • the upper surfaces of the third material 840 and the second structure 830 may be polished and planarized to expose the upper surface of the second structure 830.
  • the third material 840 becomes a third structure having the convex portion 701a of the target diffraction grating 701. In this way, a diffraction grating 701 having a third material with a high refractive index is formed on the substrate 700.
  • a method for forming a diffraction grating 701 includes the steps of (a) forming a first structure 810 including a convex portion 810b (701a) of a target diffraction grating 701 on a substrate 700 using a first material; (b) providing a second material in a recess formed by the convex portion 810b of the first structure 810 on the substrate 700 to form a second structure 830 including a convex portion 830b; (c) removing the first structure 810; and (d) providing a third material having a refractive index higher than the first material and the second material in a recess formed by the convex portion 830b of the second structure 830 on the substrate 700 to form a third structure 840 including a convex portion 701a of the diffraction grating 701.
  • first structure 810 to be formed from a first material that is easy to mold, then the second structure 830 to be formed from a second material, the third structure 840 to be formed from a third material having a high refractive index, and the second structure 830 to be removed, thereby forming a diffraction grating 701 having a third material with a high refractive index.
  • the degree of freedom in the shape of the diffraction grating is improved.
  • the first material contains a polymer material, so that the first structure 810 can be easily formed using a nanoimprinting method or the like.
  • the third material has a refractive index of 2 or more, so that a diffraction grating with a high refractive index can be realized.
  • the method for forming the diffraction grating in this exemplary embodiment makes it easy to form the diffraction grating 701 even if the protrusions 701 are oblique.
  • the diffraction grating forming methods in the first and second exemplary embodiments may be performed using a substrate processing system.
  • the substrate processing system may include a plasma processing system that processes a substrate using plasma.
  • FIG. 13 is a diagram for explaining a configuration example of a plasma processing system.
  • the plasma processing system includes a plasma processing device 1 and a control unit 2.
  • the plasma processing system is an example of a substrate processing system
  • the plasma processing device 1 is an example of a substrate processing device.
  • the plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space.
  • the gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later.
  • the substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.
  • the plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), Helicon wave excited plasma (HWP: Helicon Wave Plasma), or surface wave plasma (SWP: Surface Wave Plasma), etc.
  • various types of plasma generating units may be used, including an AC (Alternating Current) plasma generating unit and a DC (Direct Current) plasma generating unit.
  • the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz.
  • the AC signal includes an RF (Radio Frequency) signal and a microwave signal.
  • the RF signal has a frequency in the range of 100 kHz to 150 MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include, for example, a computer 2a.
  • the computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2, and is read from the storage unit 2a2 by the processing unit 2a1 and executed.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the memory unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination of these.
  • the communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 14 is a diagram for explaining a configuration example of a capacitively coupled plasma processing device.
  • the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40.
  • the plasma processing apparatus 1 also includes a substrate support unit 11 and a gas inlet unit.
  • the gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10.
  • the gas inlet unit includes a shower head 13.
  • the substrate support unit 11 is disposed in the plasma processing chamber 10.
  • the shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10.
  • the plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11.
  • the plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support unit 11 are electrically insulated from the plasma processing chamber 10 housing.
  • the substrate support 11 includes a main body 111 and a ring assembly 112.
  • the main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the substrate W includes a substrate 700.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view.
  • the substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the edge ring assembly 112.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • the base 1110 includes a conductive member.
  • the conductive member of the base 1110 may function as a lower electrode.
  • the electrostatic chuck 1111 is disposed on the base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.
  • the ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b.
  • the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member.
  • an RF or DC electrode may be disposed within the ceramic member 1111a, in which case the RF or DC electrode functions as the lower electrode.
  • the RF or DC electrode is also called a bias electrode. Note that both the conductive member of the base 1110 and the RF or DC electrode may function as two lower electrodes.
  • the ring assembly 112 includes one or more annular members.
  • the one or more annular members include one or more edge rings and at least one cover ring.
  • the edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.
  • the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature.
  • the temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof.
  • a heat transfer fluid such as brine or a gas flows through the flow passage 1110a.
  • the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111.
  • the substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas between the back surface of the substrate W and the central region 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.
  • the shower head 13 also includes an upper electrode.
  • the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.
  • SGI side gas injectors
  • the gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22.
  • the gas supply unit 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13.
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.
  • the power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit.
  • the RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to at least one lower electrode and/or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s.
  • the RF power supply 31 can function as at least a part of the plasma generating unit 12.
  • a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.
  • the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b.
  • the first RF generating unit 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit and configured to generate a source RF signal (source RF power) for plasma generation.
  • the source RF signal has a frequency in the range of 10 MHz to 150 MHz.
  • the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and/or at least one upper electrode.
  • the second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
  • the bias RF signal has a frequency lower than the frequency of the source RF signal.
  • the bias RF signal has a frequency in the range of 100 kHz to 60 MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are provided to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
  • the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10.
  • the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first DC signal is applied to the at least one lower electrode.
  • the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one upper electrode.
  • the first and second DC signals may be pulsed.
  • a sequence of DC-based voltage pulses is applied to at least one lower electrode and/or at least one upper electrode.
  • the voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms.
  • a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode.
  • the first DC generator 32a and the waveform generator constitute a voltage pulse generator.
  • the second DC generator 32b and the waveform generator constitute a voltage pulse generator
  • the voltage pulse generator is connected to at least one upper electrode.
  • the voltage pulses may have a positive polarity or a negative polarity.
  • the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one period.
  • the first and second DC generating units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.
  • the exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10.
  • the exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • the plasma processing performed by using the plasma processing apparatus 1 includes an etching process for etching a film on the substrate W using plasma and a film deposition process for forming a film on the substrate W.
  • the plasma processing is executed by a controller 2.
  • the substrate W is carried into the chamber 10 by the transport arm, placed on the substrate support 11 by the lifter, and held by suction on the substrate support 11 as shown in FIG. 14.
  • the processing gas is supplied to the shower head 13 by the gas supply unit 20, and is supplied from the shower head 13 to the plasma processing space 10s.
  • the processing gas supplied at this time includes a gas that generates active species required for etching and film formation processing of the substrate W.
  • One or more RF signals are supplied from the RF power supply 31 to the upper electrode and/or the lower electrode.
  • the atmosphere in the plasma processing space 10s is exhausted from the gas exhaust port 10e, and the inside of the plasma processing space 10s may be depressurized. This generates plasma in the plasma processing space 10s, and the substrate W is plasma processed.
  • the steps of (b) forming the second structure 830, (c) removing the first structure 810, and (d) forming the third structure 840 in the above-mentioned diffraction grating forming method may be performed.
  • the steps of (b) forming the second structure 830 and (d) forming the third structure 840 may be performed by a film forming apparatus that performs CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition) or a spin coating apparatus.
  • the film forming apparatus may be either a single-wafer type or a batch type.
  • the step of (a) forming the first structure 810 may be performed by a photolithography apparatus or a nanoimprint apparatus.
  • the substrate processing system may include the above-mentioned film forming apparatus, a photolithography apparatus, a spin coating apparatus, a nanoimprint apparatus, etc.
  • the shape of the diffraction grating 701 and the position and number on the substrate 700 are not limited to those in the above exemplary embodiment.
  • the display device 500 and optical waveguide device 601 in which the diffraction grating 701 is used are not limited to those in the above exemplary embodiment.
  • the method of forming the diffraction grating may be modified in various ways without departing from the scope and spirit of the present disclosure.
  • some components in one embodiment may be added to another embodiment within the scope of the ordinary creative ability of a person skilled in the art.
  • some components in one embodiment may be replaced with corresponding components in another embodiment.
  • the present disclosure may include, for example, the following configurations.
  • a method for forming a diffraction grating including protrusions on a transparent substrate comprising the steps of: (a) forming a first structure on the substrate using a first material, the first structure including recesses corresponding to the protrusions of the diffraction grating; (b) providing a second material in the recess of the first structure on the substrate to form a second structure including the diffraction grating; (c) removing the first structure;
  • a method for forming a diffraction grating comprising:
  • the step (b) comprises: depositing the second material over the first structure; and removing an upper portion of the second material to expose the first structure.
  • step (d) includes the step of planarizing an upper surface of the second structure.
  • a method for forming a diffraction grating including protrusions on a transparent substrate comprising the steps of: (a) forming a first structure including the protrusions of the diffraction grating on the substrate using a first material; (b) providing a second material in a recess formed by the protrusion of the first structure on the substrate to form a second structure including a protrusion; (c) removing the first structure; (d) providing a third material in a recess formed by the protrusion of the second structure on the substrate as a result of removing the first structure in the (c) step, thereby forming a third structure including the diffraction grating;
  • a method for forming a diffraction grating comprising:
  • the step (b) comprises: depositing the second material over the first structure; and removing an upper portion of the second material to expose the first structure.
  • step (Appendix 16) 16 The method for forming a diffraction grating according to any one of claims 10 to 15, wherein the step (d) includes a step of planarizing an upper surface of the third structure.
  • 500 display device
  • 700 substrate
  • 701 diffraction grating
  • 701a protrusion
  • 810 first structure
  • 830 second structure
  • 840 third structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

L'invention concerne une technique de formation d'un réseau de diffraction à l'aide d'un matériau à indice de réfraction élevé.　Ce procédé de formation d'un réseau de diffraction sur un substrat ayant une perméabilité comprend : (a) une étape consistant à former, sur le substrat, une première structure comprenant des parties évidées correspondant à des parties saillantes du réseau de diffraction à l'aide d'un premier matériau ; (b) une étape consistant à fournir un second matériau aux parties évidées de la première structure sur le substrat pour former une seconde structure comprenant le réseau de diffraction ; et (3) une étape consistant à retirer la première structure.
PCT/JP2023/036136 2022-10-18 2023-10-04 Procédé de formation de réseau de diffraction WO2024084965A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-167161 2022-10-18
JP2022167161 2022-10-18

Publications (1)

Publication Number Publication Date
WO2024084965A1 true WO2024084965A1 (fr) 2024-04-25

Family

ID=90737314

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/036136 WO2024084965A1 (fr) 2022-10-18 2023-10-04 Procédé de formation de réseau de diffraction

Country Status (1)

Country Link
WO (1) WO2024084965A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011519071A (ja) * 2008-04-29 2011-06-30 コンセホ・スペリオール・デ・インベスティガシオネス・シエンティフィカス 回折格子カプラー、システムおよび方法
JP2011221518A (ja) * 2010-03-23 2011-11-04 Asahi Rubber Inc 反射材
US20200333527A1 (en) * 2019-04-18 2020-10-22 Facebook Technologies, Llc Reducing demolding stress at edges of gratings in nanoimprint lithography
JP2021504736A (ja) * 2017-11-21 2021-02-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 導波結合器の製造方法
JP2021530730A (ja) * 2018-06-29 2021-11-11 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 光学部品のマイクロ／ナノ構造を間隙充填するための流動性ｃｖｄの使用
JP2021530862A (ja) * 2018-06-28 2021-11-11 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 回折格子の製造

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011519071A (ja) * 2008-04-29 2011-06-30 コンセホ・スペリオール・デ・インベスティガシオネス・シエンティフィカス 回折格子カプラー、システムおよび方法
JP2011221518A (ja) * 2010-03-23 2011-11-04 Asahi Rubber Inc 反射材
JP2021504736A (ja) * 2017-11-21 2021-02-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 導波結合器の製造方法
JP2021530862A (ja) * 2018-06-28 2021-11-11 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 回折格子の製造
JP2021530730A (ja) * 2018-06-29 2021-11-11 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 光学部品のマイクロ／ナノ構造を間隙充填するための流動性ｃｖｄの使用
US20200333527A1 (en) * 2019-04-18 2020-10-22 Facebook Technologies, Llc Reducing demolding stress at edges of gratings in nanoimprint lithography

Similar Documents

Publication Publication Date Title
US8858753B2 (en) Focus ring heating method, plasma etching apparatus, and plasma etching method
CN109154085B (zh) 用于等离子体处理系统中的温度控制的系统和方法
TW473555B (en) High density plasma CVD process for making dielectric anti-reflective coating
US8083961B2 (en) Method and system for controlling the uniformity of a ballistic electron beam by RF modulation
CN106605292B (zh) 等离子体处理方法和等离子体处理装置
US20080035605A1 (en) Exhaust Assembly for Plasma Processing System and Method
JP2015216261A (ja) プラズマ処理装置の上部電極構造、プラズマ処理装置、及びプラズマ処理装置の運用方法
JP7145041B2 (ja) 基板支持器、プラズマ処理装置、及びフォーカスリング
KR20100099219A (ko) 플라즈마 에칭 시스템용 실리콘 카바이드 포커스 링
KR20200142094A (ko) 강화된 패터닝을 위한 에칭 정지 층 증착
JP2011071464A (ja) フォーカスリングの加熱方法及びプラズマエッチング装置及びプラズマエッチング方法
US20180374682A1 (en) Plasma processing method and plasma processing apparatus
JP2018046215A (ja) プラズマ処理装置及びプラズマ処理方法
JP2022512491A (ja) 電子ビーム装置を使用した光学装置の製造方法
TW200526808A (en) Method of improving post-develop photoresist profile on a deposited dielectric film
US20120111500A1 (en) Plasma processing apparatus
JP2019110028A (ja) プラズマ処理装置
JP4903567B2 (ja) 調整可能な光学的性質およびエッチング特性を有する材料を堆積させる方法と装置。
JP4594235B2 (ja) Ａｒｃ層をエッチングする方法
WO2024084965A1 (fr) Procédé de formation de réseau de diffraction
JP7145042B2 (ja) 基板支持器及びプラズマ処理装置
KR20210021440A (ko) 마이크로 렌즈의 제조 방법 및 플라스마 처리 장치
WO2023048281A1 (fr) Procédé de traitement au plasma et système de traitement au plasma
KR20230125757A (ko) 플라즈마 처리 방법 및 플라즈마 처리 시스템
WO2024018960A1 (fr) Dispositif de traitement au plasma et procédé de traitement au plasma