TWI709174B - 用於製造非揮發性電荷捕獲記憶體元件之基氧化方法 - Google Patents

用於製造非揮發性電荷捕獲記憶體元件之基氧化方法 Download PDF

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TWI709174B
TWI709174B TW106121057A TW106121057A TWI709174B TW I709174 B TWI709174 B TW I709174B TW 106121057 A TW106121057 A TW 106121057A TW 106121057 A TW106121057 A TW 106121057A TW I709174 B TWI709174 B TW I709174B
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layer
oxide
dielectric layer
substrate
oxygen
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TW106121057A
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TW201737344A (zh
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克里希納斯瓦米 庫馬爾
賽格 利維
卞貞秀
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愛爾蘭商經度閃存解決方案有限公司
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Non-Volatile Memory (AREA)
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TW106121057A 2012-07-01 2013-07-01 用於製造非揮發性電荷捕獲記憶體元件之基氧化方法 TWI709174B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/539,458 US8940645B2 (en) 2007-05-25 2012-07-01 Radical oxidation process for fabricating a nonvolatile charge trap memory device
US13/539,458 2012-07-01

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TW201737344A TW201737344A (zh) 2017-10-16
TWI709174B true TWI709174B (zh) 2020-11-01

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TW102123447A TWI594327B (zh) 2012-07-01 2013-07-01 用於製造非揮發性電荷捕獲記憶體元件之基氧化方法

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KR (2) KR102018278B1 (ko)
CN (2) CN104781916A (ko)
TW (2) TWI709174B (ko)
WO (1) WO2014008161A1 (ko)

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Publication number Priority date Publication date Assignee Title
US10211217B2 (en) 2017-06-20 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
CN109148468A (zh) * 2018-09-26 2019-01-04 长江存储科技有限责任公司 一种3d nand存储器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200810116A (en) * 2006-08-02 2008-02-16 Univ Nat Sun Yat Sen Thin film transistor device with nonvolatile memory function
US20080293255A1 (en) * 2007-05-25 2008-11-27 Krishnaswamy Ramkumar Radical oxidation process for fabricating a nonvolatile charge trap memory device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709928B1 (en) * 2001-07-31 2004-03-23 Cypress Semiconductor Corporation Semiconductor device having silicon-rich layer and method of manufacturing such a device
JP2004095918A (ja) * 2002-08-30 2004-03-25 Fasl Japan Ltd 半導体記憶装置及び半導体装置の製造方法
KR100501457B1 (ko) * 2003-02-04 2005-07-18 동부아남반도체 주식회사 양자 트랩 디바이스를 위한 에스오엔오엔오에스 구조를 갖는 반도체 소자
US7154779B2 (en) * 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
US7405125B2 (en) 2004-06-01 2008-07-29 Macronix International Co., Ltd. Tunnel oxynitride in flash memories
US7504700B2 (en) * 2005-04-21 2009-03-17 International Business Machines Corporation Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
CN101563783A (zh) * 2005-09-23 2009-10-21 Nxp股份有限公司 具有改善的性能的存储器件以及制造这种存储器件的方法
JP2007251132A (ja) * 2006-02-16 2007-09-27 Toshiba Corp Ｍｏｎｏｓ型不揮発性メモリセル、不揮発性メモリおよびその製造方法
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
KR100877100B1 (ko) * 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
US8614124B2 (en) * 2007-05-25 2013-12-24 Cypress Semiconductor Corporation SONOS ONO stack scaling
KR20090036850A (ko) * 2007-10-10 2009-04-15 주식회사 하이닉스반도체 플래시 메모리 소자 및 그 제조 방법
KR20090041196A (ko) * 2007-10-23 2009-04-28 삼성전자주식회사 비휘발성 메모리 소자, 그 제조 방법 및 시스템
KR20090052682A (ko) * 2007-11-21 2009-05-26 삼성전자주식회사 비휘발성 메모리 소자 및 이를 포함하는 카드 및 시스템
US7732891B2 (en) * 2008-06-03 2010-06-08 Kabushiki Kaisha Toshiba Semiconductor device
KR20100000652A (ko) * 2008-06-25 2010-01-06 삼성전자주식회사 비휘발성 메모리 소자, 이를 포함하는 메모리 카드 및시스템
CN102117810A (zh) * 2009-12-30 2011-07-06 中国科学院微电子研究所 一种电荷俘获型非易失存储器及其制作方法
KR102352542B1 (ko) * 2012-03-27 2022-01-18 롱지튜드 플래쉬 메모리 솔루션즈 리미티드 스플릿 질화물 메모리 층을 갖는 ｓｏｎｏｓ 스택

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200810116A (en) * 2006-08-02 2008-02-16 Univ Nat Sun Yat Sen Thin film transistor device with nonvolatile memory function
US20080293255A1 (en) * 2007-05-25 2008-11-27 Krishnaswamy Ramkumar Radical oxidation process for fabricating a nonvolatile charge trap memory device

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