TWI706925B - 結晶質氧化物半導體薄膜、結晶質氧化物半導體薄膜之製造方法及薄膜電晶體 - Google Patents

結晶質氧化物半導體薄膜、結晶質氧化物半導體薄膜之製造方法及薄膜電晶體 Download PDF

Info

Publication number
TWI706925B
TWI706925B TW105124350A TW105124350A TWI706925B TW I706925 B TWI706925 B TW I706925B TW 105124350 A TW105124350 A TW 105124350A TW 105124350 A TW105124350 A TW 105124350A TW I706925 B TWI706925 B TW I706925B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
thin film
crystalline oxide
film
semiconductor thin
Prior art date
Application number
TW105124350A
Other languages
English (en)
Chinese (zh)
Other versions
TW201714854A (zh
Inventor
井上一吉
宇都野太
霍間勇輝
笘井重和
江端一晃
Original Assignee
日商出光興產股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商出光興產股份有限公司 filed Critical 日商出光興產股份有限公司
Publication of TW201714854A publication Critical patent/TW201714854A/zh
Application granted granted Critical
Publication of TWI706925B publication Critical patent/TWI706925B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/22—
    • H10P14/3434—
    • H10P14/3456—
    • H10P14/3802—
    • H10P95/90—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
TW105124350A 2015-07-30 2016-08-01 結晶質氧化物半導體薄膜、結晶質氧化物半導體薄膜之製造方法及薄膜電晶體 TWI706925B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-150701 2015-07-30
JP2015150701 2015-07-30

Publications (2)

Publication Number Publication Date
TW201714854A TW201714854A (zh) 2017-05-01
TWI706925B true TWI706925B (zh) 2020-10-11

Family

ID=57885117

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105124350A TWI706925B (zh) 2015-07-30 2016-08-01 結晶質氧化物半導體薄膜、結晶質氧化物半導體薄膜之製造方法及薄膜電晶體

Country Status (6)

Country Link
US (1) US10636914B2 (enExample)
JP (3) JP6097458B1 (enExample)
KR (1) KR102530123B1 (enExample)
CN (1) CN107924822B (enExample)
TW (1) TWI706925B (enExample)
WO (1) WO2017017966A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7187322B2 (ja) * 2017-02-01 2022-12-12 出光興産株式会社 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置
WO2018143280A1 (ja) * 2017-02-01 2018-08-09 出光興産株式会社 非晶質酸化物半導体膜、酸化物焼結体、及び薄膜トランジスタ
JP7092746B2 (ja) * 2017-03-30 2022-06-28 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、薄膜トランジスタ、および電子機器
JP6930885B2 (ja) * 2017-09-21 2021-09-01 株式会社東芝 半導体装置
WO2020027243A1 (ja) * 2018-08-01 2020-02-06 出光興産株式会社 結晶構造化合物、酸化物焼結体、スパッタリングターゲット、結晶質酸化物薄膜、アモルファス酸化物薄膜、薄膜トランジスタ、及び電子機器
WO2020027244A1 (ja) * 2018-08-01 2020-02-06 出光興産株式会社 化合物
JP6853421B2 (ja) * 2019-03-28 2021-03-31 出光興産株式会社 結晶酸化物薄膜、積層体及び薄膜トランジスタ
WO2021106811A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム
KR20240073052A (ko) 2021-10-14 2024-05-24 이데미쓰 고산 가부시키가이샤 결정 산화물 박막, 적층체 및 박막 트랜지스터
KR20240154594A (ko) * 2022-03-30 2024-10-25 가부시키가이샤 재팬 디스프레이 박막 트랜지스터 및 전자 기기

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201232787A (en) * 2010-12-28 2012-08-01 Idemitsu Kosan Co Laminate structure including oxide semiconductor thin film layer, and thin film transistor
TW201308611A (zh) * 2011-08-11 2013-02-16 出光興產股份有限公司 薄膜電晶體

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007058248A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
JP5237558B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及び酸化物半導体膜
JP5237557B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及びその製造方法
JP5244327B2 (ja) 2007-03-05 2013-07-24 出光興産株式会社 スパッタリングターゲット
WO2008072486A1 (ja) 2006-12-13 2008-06-19 Idemitsu Kosan Co., Ltd. スパッタリングターゲット及び酸化物半導体膜
US9269573B2 (en) * 2008-09-17 2016-02-23 Idemitsu Kosan Co., Ltd. Thin film transistor having crystalline indium oxide semiconductor film
JPWO2010070944A1 (ja) 2008-12-15 2012-05-24 出光興産株式会社 酸化インジウム系焼結体及びスパッタリングターゲット
KR20100070944A (ko) 2008-12-18 2010-06-28 배경환 밝기 조절 스탠드
JP5491258B2 (ja) 2010-04-02 2014-05-14 出光興産株式会社 酸化物半導体の成膜方法
JP5689250B2 (ja) 2010-05-27 2015-03-25 出光興産株式会社 酸化物焼結体、それからなるターゲット及び酸化物半導体薄膜
JP2012144410A (ja) 2011-01-14 2012-08-02 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
KR20120090490A (ko) 2011-02-08 2012-08-17 주식회사 지.엠 기판 검사장치
JP2012169344A (ja) 2011-02-10 2012-09-06 Sony Corp 薄膜トランジスタならびに表示装置および電子機器
WO2012169449A1 (en) 2011-06-08 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
JP5301021B2 (ja) * 2011-09-06 2013-09-25 出光興産株式会社 スパッタリングターゲット
US9062390B2 (en) * 2011-09-12 2015-06-23 Asm International N.V. Crystalline strontium titanate and methods of forming the same
JP5966840B2 (ja) * 2012-10-11 2016-08-10 住友金属鉱山株式会社 酸化物半導体薄膜および薄膜トランジスタ
JP2015018959A (ja) 2013-07-11 2015-01-29 出光興産株式会社 酸化物半導体及び酸化物半導体膜の製造方法
US9455349B2 (en) * 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
JP2015109315A (ja) * 2013-12-03 2015-06-11 出光興産株式会社 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置
JP5977893B2 (ja) * 2013-12-27 2016-08-24 出光興産株式会社 酸化物焼結体、その製造方法及びスパッタリングターゲット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201232787A (en) * 2010-12-28 2012-08-01 Idemitsu Kosan Co Laminate structure including oxide semiconductor thin film layer, and thin film transistor
TW201308611A (zh) * 2011-08-11 2013-02-16 出光興產股份有限公司 薄膜電晶體

Also Published As

Publication number Publication date
CN107924822A (zh) 2018-04-17
US20180219098A1 (en) 2018-08-02
JP6289693B2 (ja) 2018-03-07
JP2017123472A (ja) 2017-07-13
KR20180034318A (ko) 2018-04-04
CN107924822B (zh) 2022-10-28
JP6097458B1 (ja) 2017-03-15
US10636914B2 (en) 2020-04-28
TW201714854A (zh) 2017-05-01
KR102530123B1 (ko) 2023-05-08
JP2018101793A (ja) 2018-06-28
JPWO2017017966A1 (ja) 2017-07-27
WO2017017966A1 (ja) 2017-02-02

Similar Documents

Publication Publication Date Title
TWI706925B (zh) 結晶質氧化物半導體薄膜、結晶質氧化物半導體薄膜之製造方法及薄膜電晶體
TWI813554B (zh) 晶質氧化物半導體薄膜、積層體之製造方法、薄膜電晶體、薄膜電晶體之製造方法、電子機器、車載用顯示裝置
KR100939998B1 (ko) 비정질 산화물 및 전계 효과 트랜지스터
US9768316B2 (en) Oxide semiconductor thin film and thin film transistor
JP5966840B2 (ja) 酸化物半導体薄膜および薄膜トランジスタ
JP6178733B2 (ja) 積層構造、その製造方法及び薄膜トランジスタ
US9368639B2 (en) Oxide semiconductor thin film, production method thereof, and thin film transistor
TWI525838B (zh) Thin film transistor
JP6143423B2 (ja) 半導体装置の製造方法
JP2013183001A (ja) 半導体装置
JP6036984B2 (ja) 酸窒化物半導体薄膜
JP2016201458A (ja) 微結晶質酸化物半導体薄膜及びそれを用いた薄膜トランジスタ
Kim et al. Electrical characteristics of fluorine-doped zinc oxynitride thin-film transistors
JP2022076351A (ja) 酸化物半導体層を有する薄膜トランジスタ及びスパッタリングターゲット