KR102530123B1 - 결정질 산화물 반도체 박막, 결정질 산화물 반도체 박막의 제조 방법 및 박막 트랜지스터 - Google Patents

결정질 산화물 반도체 박막, 결정질 산화물 반도체 박막의 제조 방법 및 박막 트랜지스터 Download PDF

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KR102530123B1
KR102530123B1 KR1020177034668A KR20177034668A KR102530123B1 KR 102530123 B1 KR102530123 B1 KR 102530123B1 KR 1020177034668 A KR1020177034668 A KR 1020177034668A KR 20177034668 A KR20177034668 A KR 20177034668A KR 102530123 B1 KR102530123 B1 KR 102530123B1
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thin film
oxide semiconductor
semiconductor thin
crystalline oxide
mobility
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KR20180034318A (ko
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가즈요시 이노우에
후토시 우츠노
유키 츠루마
시게카즈 도마이
가즈아키 에바타
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이데미쓰 고산 가부시키가이샤
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KR1020177034668A 2015-07-30 2016-07-29 결정질 산화물 반도체 박막, 결정질 산화물 반도체 박막의 제조 방법 및 박막 트랜지스터 Active KR102530123B1 (ko)

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JP2015150701 2015-07-30
JPJP-P-2015-150701 2015-07-30
PCT/JP2016/003528 WO2017017966A1 (ja) 2015-07-30 2016-07-29 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ

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KR102530123B1 true KR102530123B1 (ko) 2023-05-08

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WO2018143073A1 (ja) * 2017-02-01 2018-08-09 出光興産株式会社 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置
JP7092746B2 (ja) * 2017-03-30 2022-06-28 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、薄膜トランジスタ、および電子機器
JP6930885B2 (ja) 2017-09-21 2021-09-01 株式会社東芝 半導体装置
CN116240630A (zh) * 2018-08-01 2023-06-09 出光兴产株式会社 晶体化合物、氧化物烧结体、溅射靶、晶质及无定形氧化物薄膜、薄膜晶体管及电子设备
TWI770407B (zh) * 2018-08-01 2022-07-11 日本商出光興產股份有限公司 化合物
CN113614276B (zh) * 2019-03-28 2022-10-11 出光兴产株式会社 晶体氧化物薄膜、层叠体以及薄膜晶体管
WO2021106811A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム
KR20240073052A (ko) * 2021-10-14 2024-05-24 이데미쓰 고산 가부시키가이샤 결정 산화물 박막, 적층체 및 박막 트랜지스터
WO2023189003A1 (ja) * 2022-03-30 2023-10-05 株式会社ジャパンディスプレイ 薄膜トランジスタ及び電子機器
JP2026012042A (ja) * 2024-07-10 2026-01-23 株式会社コベルコ科研 酸化物半導体薄膜、複合薄膜およびスパッタリングターゲット
WO2026014186A1 (ja) * 2024-07-10 2026-01-15 株式会社コベルコ科研 酸化物半導体薄膜、複合薄膜およびスパッタリングターゲット

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