CN107924822B - 晶体氧化物半导体薄膜、晶体氧化物半导体薄膜的制造方法以及薄膜晶体管 - Google Patents

晶体氧化物半导体薄膜、晶体氧化物半导体薄膜的制造方法以及薄膜晶体管 Download PDF

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CN107924822B
CN107924822B CN201680044317.2A CN201680044317A CN107924822B CN 107924822 B CN107924822 B CN 107924822B CN 201680044317 A CN201680044317 A CN 201680044317A CN 107924822 B CN107924822 B CN 107924822B
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thin film
oxide semiconductor
crystalline oxide
semiconductor thin
film according
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CN107924822A (zh
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井上一吉
宇都野太
霍间勇辉
笘井重和
江端一晃
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Idemitsu Kosan Co Ltd
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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CN201680044317.2A 2015-07-30 2016-07-29 晶体氧化物半导体薄膜、晶体氧化物半导体薄膜的制造方法以及薄膜晶体管 Active CN107924822B (zh)

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JP2015150701 2015-07-30
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PCT/JP2016/003528 WO2017017966A1 (ja) 2015-07-30 2016-07-29 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ

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JP6930885B2 (ja) 2017-09-21 2021-09-01 株式会社東芝 半導体装置
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TWI770407B (zh) * 2018-08-01 2022-07-11 日本商出光興產股份有限公司 化合物
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WO2021106811A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム
KR20240073052A (ko) * 2021-10-14 2024-05-24 이데미쓰 고산 가부시키가이샤 결정 산화물 박막, 적층체 및 박막 트랜지스터
WO2023189003A1 (ja) * 2022-03-30 2023-10-05 株式会社ジャパンディスプレイ 薄膜トランジスタ及び電子機器
JP2026012042A (ja) * 2024-07-10 2026-01-23 株式会社コベルコ科研 酸化物半導体薄膜、複合薄膜およびスパッタリングターゲット
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