TWI698702B - 相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法 - Google Patents

相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法 Download PDF

Info

Publication number
TWI698702B
TWI698702B TW106140657A TW106140657A TWI698702B TW I698702 B TWI698702 B TW I698702B TW 106140657 A TW106140657 A TW 106140657A TW 106140657 A TW106140657 A TW 106140657A TW I698702 B TWI698702 B TW I698702B
Authority
TW
Taiwan
Prior art keywords
phase shift
layer
film
chromium
shift mask
Prior art date
Application number
TW106140657A
Other languages
English (en)
Chinese (zh)
Other versions
TW201826010A (zh
Inventor
坪井誠治
浅川敬司
中村伊都
安森順一
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW201826010A publication Critical patent/TW201826010A/zh
Application granted granted Critical
Publication of TWI698702B publication Critical patent/TWI698702B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
TW106140657A 2016-12-27 2017-11-23 相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法 TWI698702B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016252703A JP6812236B2 (ja) 2016-12-27 2016-12-27 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP2016-252703 2016-12-27

Publications (2)

Publication Number Publication Date
TW201826010A TW201826010A (zh) 2018-07-16
TWI698702B true TWI698702B (zh) 2020-07-11

Family

ID=62701037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106140657A TWI698702B (zh) 2016-12-27 2017-11-23 相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法

Country Status (4)

Country Link
JP (1) JP6812236B2 (enExample)
KR (1) KR102271751B1 (enExample)
CN (1) CN108241251B (enExample)
TW (1) TWI698702B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220350237A1 (en) * 2021-04-30 2022-11-03 Skc Solmics Co., Ltd. Photomask blank and photomask using the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7115281B2 (ja) * 2018-12-12 2022-08-09 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7044095B2 (ja) * 2019-05-31 2022-03-30 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
KR102598440B1 (ko) * 2019-12-20 2023-11-07 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
CN112259557B (zh) * 2020-10-15 2022-12-06 Tcl华星光电技术有限公司 显示面板及其制备方法
KR102475672B1 (ko) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200602803A (en) * 2004-03-31 2006-01-16 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
TW201118503A (en) * 2009-11-27 2011-06-01 S&S Tech Co Ltd Blankmask, photomask, and method for manufacturing the same
CN102534502A (zh) * 2010-12-06 2012-07-04 信越化学工业株式会社 溅射膜形成用硅靶和形成含硅薄膜的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
KR100295385B1 (ko) * 1993-04-09 2001-09-17 기타지마 요시토시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법
US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
JP2983020B1 (ja) * 1998-12-18 1999-11-29 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
JPWO2009123166A1 (ja) * 2008-03-31 2011-07-28 Hoya株式会社 フォトマスクブランクおよびその製造方法
JP2010008532A (ja) * 2008-06-25 2010-01-14 Toppan Printing Co Ltd ハーフトーンフォトマスク及びそれを用いて製造したカラーフィルタ基板
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
KR101760337B1 (ko) * 2013-04-17 2017-07-21 알박 세이마쿠 가부시키가이샤 위상 시프트 마스크의 제조 방법 및 위상 시프트 마스크
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6229466B2 (ja) * 2013-12-06 2017-11-15 信越化学工業株式会社 フォトマスクブランク
JP6722421B2 (ja) * 2014-04-04 2020-07-15 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JP6661262B2 (ja) * 2014-05-29 2020-03-11 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP6594742B2 (ja) * 2014-11-20 2019-10-23 Ｈｏｙａ株式会社 フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法
KR102069960B1 (ko) * 2015-03-27 2020-01-23 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법, 및 반도체 장치의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200602803A (en) * 2004-03-31 2006-01-16 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
TW201137510A (en) * 2004-03-31 2011-11-01 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
TW201137511A (en) * 2004-03-31 2011-11-01 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
TW201118503A (en) * 2009-11-27 2011-06-01 S&S Tech Co Ltd Blankmask, photomask, and method for manufacturing the same
CN102534502A (zh) * 2010-12-06 2012-07-04 信越化学工业株式会社 溅射膜形成用硅靶和形成含硅薄膜的方法
CN102534502B (zh) 2010-12-06 2015-04-01 信越化学工业株式会社 溅射膜形成用硅靶和形成含硅薄膜的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220350237A1 (en) * 2021-04-30 2022-11-03 Skc Solmics Co., Ltd. Photomask blank and photomask using the same

Also Published As

Publication number Publication date
CN108241251B (zh) 2023-02-28
JP6812236B2 (ja) 2021-01-13
TW201826010A (zh) 2018-07-16
JP2018106023A (ja) 2018-07-05
CN108241251A (zh) 2018-07-03
KR102271751B1 (ko) 2021-06-30
KR20180076296A (ko) 2018-07-05

Similar Documents

Publication Publication Date Title
TWI698702B (zh) 相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法
KR102003650B1 (ko) 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
KR101935171B1 (ko) 표시 장치 제조용의 위상 시프트 마스크 블랭크, 표시 장치 제조용의 위상 시프트 마스크 및 그 제조 방법, 및 표시 장치의 제조 방법
KR20180070530A (ko) 위상 시프트 마스크 블랭크 및 그 제조 방법과 위상 시프트 마스크의 제조 방법
JP7095157B2 (ja) 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
TWI813644B (zh) 相移光罩基底、相移光罩之製造方法、及顯示裝置之製造方法
CN108319103B (zh) 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法
TW201921090A (zh) 遮罩基板、相移遮罩及半導體元件之製造方法
JP2019148789A (ja) 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法
KR20180109697A (ko) 위상 시프트 마스크 블랭크 및 그것을 사용한 위상 시프트 마스크의 제조 방법, 그리고 패턴 전사 방법
JP2019061106A (ja) 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
TW202141169A (zh) 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP2018173644A (ja) 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6999460B2 (ja) 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
CN108319104B (zh) 显示装置制造用相移掩模坯料、显示装置制造用相移掩模的制造方法及显示装置的制造方法
KR102894571B1 (ko) 마스크 블랭크, 전사용 마스크의 제조 방법 및 표시 장치의 제조 방법
TW202336522A (zh) 光罩基底、光罩、光罩之製造方法、及顯示裝置之製造方法
JP2023051759A (ja) フォトマスクブランク、フォトマスク、フォトマスクの製造方法、および表示装置の製造方法