JP6812236B2 - 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 - Google Patents

位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 Download PDF

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JP6812236B2
JP6812236B2 JP2016252703A JP2016252703A JP6812236B2 JP 6812236 B2 JP6812236 B2 JP 6812236B2 JP 2016252703 A JP2016252703 A JP 2016252703A JP 2016252703 A JP2016252703 A JP 2016252703A JP 6812236 B2 JP6812236 B2 JP 6812236B2
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Prior art keywords
phase shift
film
layer
chromium
functional layer
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Japanese (ja)
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JP2018106023A5 (enExample
JP2018106023A (ja
Inventor
誠治 坪井
誠治 坪井
浅川　敬司
敬司 浅川
伊都 中村
伊都 中村
順一 安森
順一 安森
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Hoya Corp
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Hoya Corp
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Priority to JP2016252703A priority Critical patent/JP6812236B2/ja
Priority to TW106140657A priority patent/TWI698702B/zh
Priority to KR1020170164146A priority patent/KR102271751B1/ko
Priority to CN201711295074.2A priority patent/CN108241251B/zh
Publication of JP2018106023A publication Critical patent/JP2018106023A/ja
Publication of JP2018106023A5 publication Critical patent/JP2018106023A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
JP2016252703A 2016-12-27 2016-12-27 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 Active JP6812236B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016252703A JP6812236B2 (ja) 2016-12-27 2016-12-27 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
TW106140657A TWI698702B (zh) 2016-12-27 2017-11-23 相移光罩基底及使用其之相移光罩之製造方法、與顯示裝置之製造方法
KR1020170164146A KR102271751B1 (ko) 2016-12-27 2017-12-01 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
CN201711295074.2A CN108241251B (zh) 2016-12-27 2017-12-08 相移掩模坯料、相移掩模制造方法及显示装置制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016252703A JP6812236B2 (ja) 2016-12-27 2016-12-27 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

Publications (3)

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JP2018106023A JP2018106023A (ja) 2018-07-05
JP2018106023A5 JP2018106023A5 (enExample) 2019-10-24
JP6812236B2 true JP6812236B2 (ja) 2021-01-13

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JP (1) JP6812236B2 (enExample)
KR (1) KR102271751B1 (enExample)
CN (1) CN108241251B (enExample)
TW (1) TWI698702B (enExample)

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* Cited by examiner, † Cited by third party
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JP7115281B2 (ja) * 2018-12-12 2022-08-09 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7044095B2 (ja) * 2019-05-31 2022-03-30 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
KR102598440B1 (ko) * 2019-12-20 2023-11-07 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
CN112259557B (zh) * 2020-10-15 2022-12-06 Tcl华星光电技术有限公司 显示面板及其制备方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
KR102475672B1 (ko) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

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JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
KR100295385B1 (ko) * 1993-04-09 2001-09-17 기타지마 요시토시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법
US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
JP2983020B1 (ja) * 1998-12-18 1999-11-29 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
JPWO2009123166A1 (ja) * 2008-03-31 2011-07-28 Hoya株式会社 フォトマスクブランクおよびその製造方法
JP2010008532A (ja) * 2008-06-25 2010-01-14 Toppan Printing Co Ltd ハーフトーンフォトマスク及びそれを用いて製造したカラーフィルタ基板
KR20110059510A (ko) * 2009-11-27 2011-06-02 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조 방법
JP5270647B2 (ja) * 2010-12-06 2013-08-21 信越化学工業株式会社 スパッタリング成膜用珪素ターゲットおよび珪素含有薄膜の成膜方法
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KR101760337B1 (ko) * 2013-04-17 2017-07-21 알박 세이마쿠 가부시키가이샤 위상 시프트 마스크의 제조 방법 및 위상 시프트 마스크
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6229466B2 (ja) * 2013-12-06 2017-11-15 信越化学工業株式会社 フォトマスクブランク
JP6722421B2 (ja) * 2014-04-04 2020-07-15 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JP6661262B2 (ja) * 2014-05-29 2020-03-11 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP6594742B2 (ja) * 2014-11-20 2019-10-23 Ｈｏｙａ株式会社 フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法
KR102069960B1 (ko) * 2015-03-27 2020-01-23 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법, 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
TWI698702B (zh) 2020-07-11
CN108241251B (zh) 2023-02-28
TW201826010A (zh) 2018-07-16
JP2018106023A (ja) 2018-07-05
CN108241251A (zh) 2018-07-03
KR102271751B1 (ko) 2021-06-30
KR20180076296A (ko) 2018-07-05

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