TWI691107B - 光感測元件之電洞捕獲層形成用組成物及光感測元件 - Google Patents
光感測元件之電洞捕獲層形成用組成物及光感測元件 Download PDFInfo
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- TWI691107B TWI691107B TW105108282A TW105108282A TWI691107B TW I691107 B TWI691107 B TW I691107B TW 105108282 A TW105108282 A TW 105108282A TW 105108282 A TW105108282 A TW 105108282A TW I691107 B TWI691107 B TW I691107B
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- RSKGMYDENCAJEN-UHFFFAOYSA-N hexadecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OC)(OC)OC RSKGMYDENCAJEN-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
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- 150000007517 lewis acids Chemical class 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
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- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
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- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 description 1
- INMHJULHWVWVFN-UHFFFAOYSA-N naphthalene-1,3,5-trisulfonic acid Chemical compound C1=CC=C(S(O)(=O)=O)C2=CC(S(=O)(=O)O)=CC(S(O)(=O)=O)=C21 INMHJULHWVWVFN-UHFFFAOYSA-N 0.000 description 1
- 125000004998 naphthylethyl group Chemical group C1(=CC=CC2=CC=CC=C12)CC* 0.000 description 1
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- PLXPTFQGYWXIEA-UHFFFAOYSA-N nitroformonitrile Chemical group [O-][N+](=O)C#N PLXPTFQGYWXIEA-UHFFFAOYSA-N 0.000 description 1
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- 125000005246 nonafluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
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- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- LHEOFIBQZSRTNC-UHFFFAOYSA-N phenanthrene-3-carbaldehyde Chemical compound C1=CC=C2C3=CC(C=O)=CC=C3C=CC2=C1 LHEOFIBQZSRTNC-UHFFFAOYSA-N 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 1
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007347 radical substitution reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical compound C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MLXDKRSDUJLNAB-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F MLXDKRSDUJLNAB-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 1
- FCIABWJRBPKYJO-UHFFFAOYSA-N triethoxy(furan-3-yl)silane Chemical compound CCO[Si](OCC)(OCC)C=1C=COC=1 FCIABWJRBPKYJO-UHFFFAOYSA-N 0.000 description 1
- SAWDTKLQESXBDN-UHFFFAOYSA-N triethoxy(heptyl)silane Chemical compound CCCCCCC[Si](OCC)(OCC)OCC SAWDTKLQESXBDN-UHFFFAOYSA-N 0.000 description 1
- OYGYKEULCAINCL-UHFFFAOYSA-N triethoxy(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC OYGYKEULCAINCL-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- ZRQAIBMAFLMIND-UHFFFAOYSA-N triethoxy(thiophen-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CS1 ZRQAIBMAFLMIND-UHFFFAOYSA-N 0.000 description 1
- CUVIJHAPWYUQIV-UHFFFAOYSA-N triethoxy-[3-(1,1,1,2,3,3,3-heptafluoropropan-2-yloxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOC(F)(C(F)(F)F)C(F)(F)F CUVIJHAPWYUQIV-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- PBTDWUVVCOLMFE-UHFFFAOYSA-N triethoxy-[4-(trifluoromethyl)phenyl]silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C(C(F)(F)F)C=C1 PBTDWUVVCOLMFE-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
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- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/026—Wholly aromatic polyamines
- C08G73/0266—Polyanilines or derivatives thereof
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
- C08K3/045—Fullerenes
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/02—Polyamines
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
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Abstract
本發明藉由使用例如光感測元件之電洞捕獲層形成用組成物，其係包含如下述式表示之由分子量200~2,000之苯胺衍生物或噻吩衍生物等所構成之電荷輸送性物質與有機溶劑，而得到可兼具高光電轉換效率及低暗電流之光感測元件。
Description
本發明係關於光感測元件之電洞捕獲層形成用組成物及光感測元件。
以往，於光感測使用有利用光電效果之光電子增倍管或利用pn接合之光二極體。作為其用途不僅光感測，亦作為固體攝像元件，被應用民生用圖像感測或車載用途等。
近年來從小型化、輕量化、便宜、設計性的觀點來看，開發於光電轉換層使用有機材料之有機光感測正受到注目。
有機光感測係具備光電轉換層、電荷(電洞、電子)捕獲層、電極(陽極、陰極)及光學過濾器等而構成。
此等當中，光電轉換層及電荷捕獲層一般雖藉由真空蒸鍍法形成，但於真空蒸鍍法於因量產製程造成之複雜性、裝置的高成本化、材料的利用效率等之點有問題。
由此等的點來看，作為電洞捕獲層用之塗佈型材料，雖亦有使用如PEDOT/PSS等之水分散性高分子
有機導電材料的情況，但由於為水分散液故有水分的完全去除或再吸濕的控制困難，易加速元件之劣化的問題。
而且PEDOT/PSS水分散液由於具有固形分易凝聚的性質，除了有易產生塗佈膜的缺陷，易發生塗佈裝置的堵塞或腐蝕的問題之外，於耐熱性這點亦不夠充分，於進行量產化上尚殘存各種課題。
又，於光感測，由於必須將受光特性最大化，一般進行加入外部電場(參照專利文獻1)。
藉由加入外部電場除了可期待受光感度的提昇或對應速度的提昇之外，同時從電極引起電洞及電子注入，並藉此增加暗電流。
此暗電流的增加由於成為檢出感度降低的主要原因，故為了製造高受光感度之元件，邊顯示高光電轉換效率並且抑制暗電流變為重要。
[專利文獻1]日本特開2002-83946號公報
本發明係鑑於上述事情而完成，以提供一種給予可兼具高光電轉換效率及低暗電流之光感測元件的光感測元件之電洞捕獲層形成用組成物作為目的。
本發明者們為了達成上述目的經重複努力研究的結果發現，將由包含比較低分子之電荷輸送性物質與有機溶劑之組成物所製得之薄膜作為電洞捕獲層使用之光感測元件，可兼具高光電轉換效率及低暗電流，而完成本發明。
亦即，本發明係提供1.一種光感測元件之電洞捕獲層形成用組成物，其特徵為包含分子量200~2,000之電荷輸送性物質與有機溶劑、2.如1之光感測元件之電洞捕獲層形成用組成物，其中，前述電荷輸送性物質為選自苯胺衍生物及噻吩衍生物中之至少一種、3.如1或2之光感測元件之電洞捕獲層形成用組成物，其係包含電子接受性摻雜劑物質、4.如1~3中任一項之光感測元件之電洞捕獲層形成用組成物，其中，前述電子接受性摻雜劑物質係包含芳基磺酸化合物、5.如4之光感測元件之電洞捕獲層形成用組成物，其中，前述芳基磺酸化合物為式(D1)表示之萘或是蒽磺酸化合物、萘三磺酸或聚苯乙烯磺酸，
(式中，Z係表示O，A係表示萘環或蒽環，B係表示2~4價之全氟聯苯基，s係表示與A鍵結之磺酸基數，為滿足1≦s≦4之整數，t係表示B與Z的鍵結數，為滿足2~4之整數)、6.如5之光感測元件之電洞捕獲層形成用組成物，其中，前述A係表示萘環、7.如1~6中任一項之光感測元件之電洞捕獲層形成用組成物，其係包含有機矽烷化合物、8.一種光感測元件，其係具有由如1~7中任一項之光感測元件之電洞捕獲層形成用組成物所製作之電洞捕獲層、與和該電洞捕獲層接觸的方式設置之光電轉換層、9.如8之光感測元件，其中，前述光電轉換層係包含富勒烯衍生物、10.如8之光感測元件，.其中，前述光電轉換層係包含於主鏈包含噻吩骨架之聚合物、11.如8之光感測元件，其中，前述光電轉換層係包含富勒烯衍生物及於主鏈包含噻吩骨架之聚合物。
藉由使用本發明之光感測元件之電洞捕獲層形成用組成物，可得到可兼具高光電轉換效率及低暗電流的光感測元件。
又，本發明之組成物由於均勻有機溶液對量產製程的適合性高，且邊平坦化具有凹凸之基底的陽極並且顯示高度均勻成膜性，可實現元件之高產出率。
進而，由本發明之組成物所製得之電洞捕獲層由於顯示高度耐熱性，故可耐住成膜後之各種高溫製程。
以下，對於本發明進一步詳細說明。
有關本發明之光感測元件之電洞捕獲層形成用組成物係包含分子量200~2,000之電荷輸送性物質與有機溶劑。
於本發明使用之電荷輸送性物質的分子量雖為200~2,000，但考量導電性觀點時，作為下限較佳為300以上，更佳為400以上，考量對於溶劑之溶解性提昇的觀點時，作為上限較佳為1,500以下，更佳為1,000以下。
作為電荷輸送性物質若為滿足上述分子量者，則並未特別限定，雖然從周知之電荷輸送性物質適當選擇即可，但較佳為苯胺衍生物、噻吩衍生物，特佳為苯胺衍生物。
作為此等苯胺衍生物及噻吩衍生物之具體例，例如可列舉國際公開第2005/043962號、國際公開第2013/
042623號、國際公開第2014/141998號等所揭示者。
更具體而言，可列舉以下述式(H1)~(H3)表示者。
尚，式(H1)表示之苯胺衍生物可為於其分子內具有下述式表示之醌二亞胺構造之氧化型苯胺衍生物(醌二亞胺衍生物)。作為氧化苯胺衍生物成為醌二亞胺衍生物之方法，可列舉國際公開第2008/010474號、國際公開第2014/119782號記載之方法等。
式(H1)中，R1~R6係分別獨立表示氫原子、鹵素原子、硝基、氰基、胺基、可被Z1取代之碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基、可被Z2取代之碳數6~20之芳基或是碳數2~20之雜芳基、-NHY1、-NY2Y3、-OY4、或-SY5基，Y1~Y5係分別獨立表示可被Z1取代之碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基、或可被Z2取代之碳數6~20之芳基或是碳數2~20之雜芳基，Z1係表示鹵素原子、硝基、氰基、胺基、或可被Z3取代之碳數6~20之芳基或是碳數2~20之雜芳基，Z2係表示鹵素原子、硝基、氰基、胺基、或可被Z3取代之碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基，Z3係表示鹵素原子、硝基、氰基、或胺基，k及l係分別獨立為1~5之整數。
式(H2)中，R7~R10係分別獨立表示氫原子、鹵素原子、硝基、氰基、羥基、巰基、磷酸基、磺酸基、羧基、可被Z1取代之碳數1~20之烷氧基、碳數1~20之硫烷氧基、碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基、可被Z2取代之碳數6~20之芳基或是碳數7~20之芳烷基、或碳數1~20之醯基，R11~R14係分別獨立表示氫原子、苯基、萘基、吡啶基、嘧啶基、噠嗪基、吡嗪基、呋喃基、吡咯基、吡唑基、咪唑基、噻吩基(此等之基為可被鹵素原子、硝基、氰基、羥基、巰基、磷酸基、磺酸基、羧基、碳數1~20之烷氧基、碳數1~20之硫烷氧基、碳數1~20之烷基、碳數1~20之鹵
烷基、碳數2~20之烯基、碳數2~20之炔基、碳數6~20之芳基、碳數7~20之芳烷基或碳數1~20之醯基取代)、或式(H4)表示之基(惟，R11~R14之至少一個為氫原子)，m係表示2~5之整數。Z1及Z2係表示與上述相同意義。
式(H4)中，R15~R18係分別獨立表示氫原子、鹵素原子、硝基、氰基、羥基、巰基、磷酸基、磺酸基、羧基、可被Z1取代之碳數1~20之烷氧基、碳數1~20之硫烷氧基、碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基、可被Z2取代之碳數6~20之芳基或是碳數7~20之芳烷基、或碳數1~20之醯基，R19及R20係分別獨立表示苯基、萘基、蒽基、吡啶基、嘧啶基、噠嗪基、吡嗪基、呋喃基、吡咯基、吡唑基、咪唑基、噻吩基(此等之基可彼此鍵結形成環，且可被鹵素原子、硝基、氰基、羥基、巰基、磷酸基、磺酸基、羧基、碳數1~20之烷氧基、碳數1~20之硫烷氧基、碳數1~20之烷基、碳數1~20之鹵烷基、碳數2~20之烯基、碳數2~20之炔基、碳數6~20之芳基、碳數7~20之芳烷
基、或碳數1~20之醯基取代)。Z1及Z2係表示與上述相同意義。
式(H3)中，R21~R24係分別獨立表示氫原子、鹵素原子、羥基、胺基、矽烷醇基、巰基、羧基、磺酸基、磷酸基、磷酸酯基、酯基、硫酯基、醯胺基、硝基、可被Z1取代之碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基、可被Z2取代之碳數6~20之芳基或是碳數7~20之芳烷基、碳數1~20之醯基、磺酸基、-NHY1、-NY2Y3、-OY4、-SY5或-SiY6Y7Y8，Y1~Y8係分別獨立表示可被Z1取代之碳數1~20之烷基、碳數2~20之烯基或是碳數2~20之炔基、或可被Z2取代之碳數6~20之芳基或是碳數2~20之雜芳基，X及Y係分別獨立表示可被Z2取代之噻吩環，噻因(Dithiin)環所包含之2個硫原子可分別獨立為SO基或SO2基。p、q及r係分別獨立為0或1以上之整數且滿足p+q+r≦20之數。Z1及Z2係表示與上述相同意義。
在上述各式，作為鹵素原子，可列舉氟原子、氯原子、溴原子、碘原子等。
作為碳數1~20之烷基，為直鏈狀、分支鏈狀、環狀之任一皆可，例如可列舉甲基、乙基、n-丙基、異丙基、n-丁基、異丁基、s-丁基、t-丁基、n-戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基等之碳數1~20之直鏈或分支鏈狀烷基；環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環壬基、環癸基、聯環丁基、聯環戊基、聯
環己基、聯環庚基、聯環辛基、聯環壬基、聯環癸基等之碳數3~20之環狀烷基等。
作為碳數2~20之烯基之具體例，可列舉乙烯基、n-1-丙烯基、n-2-丙烯基、1-甲基乙烯基、n-1-丁烯基、n-2-丁烯基、n-3-丁烯基、2-甲基-1-丙烯基、2-甲基-2-丙烯基、1-乙基乙烯基、1-甲基-1-丙烯基、1-甲基-2-丙烯基、n-1-戊烯基、n-1-癸烯基、n-1-二十碳烯基等。
作為碳數2~20之炔基之具體例，可列舉乙炔基、n-1-丙炔基、n-2-丙炔基、n-1-丁炔基、n-2-丁炔基、n-3-丁炔基、1-甲基-2-丙炔基、n-1-戊炔基、n-2-戊炔基、n-3-戊炔基、n-4-戊炔基、1-甲基-n-丁炔基、2-甲基-n-丁炔基、3-甲基-n-丁炔基、1,1-二甲基-n-丙炔基、n-1-己炔基、n-1-癸炔基、n-1-十五碳炔基、n-1-二十碳炔基等。
作為碳數6~20之芳基之具體例，可列舉苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲基、3-菲基、4-菲基、9-菲基等。
作為碳數7~20之芳烷基之具體例，可列舉苄基、苯基乙基、苯基丙基、萘基甲基、萘基乙基、萘基丙基等。
作為碳數2~20之雜芳基之具體例，可列舉2-噻吩基、3-噻吩基、2-呋喃基、3-呋喃基、2-噁唑基、4-噁唑基、5-噁唑基、3-異噁唑基、4-異噁唑基、5-異噁唑基、2-噻唑基、4-噻唑基、5-噻唑基、3-異噻唑基、4-
異噻唑基、5-異噻唑基、2-咪唑基、4-咪唑基、2-吡啶基、3-吡啶基、4-吡啶基等。
作為碳數1~20之鹵烷基，雖可列舉將上述碳數1~20之烷基的氫原子中之至少一個被鹵素原子取代者，但其中較佳為氟烷基，更佳為全氟烷基。
作為其具體例，可列舉氟甲基、二氟甲基、三氟甲基、五氟乙基、2,2,2-三氟乙基、七氟丙基、2,2,3,3,3-五氟丙基、2,2,3,3-四氟丙基、2,2,2-三氟-1-(三氟甲基)乙基、九氟丁基、4,4,4-三氟丁基、十一氟戊基、2,2,3,3,4,4,5,5,5-九氟戊基、2,2,3,3,4,4,5,5-八氟戊基、十三氟己基、2,2,3,3,4,4,5,5,6,6,6-十一氟己基、2,2,3,3,4,4,5,5,6,6-十氟己基、3,3,4,4,5,5,6,6,6-九氟己基等。
作為碳數1~20之烷氧基之具體例，可列舉甲氧基、乙氧基、n-丙氧基、i-丙氧基、c-丙氧基、n-丁氧基、i-丁氧基、s-丁氧基、t-丁氧基、n-戊氧基、n-己氧基、n-庚氧基、n-辛氧基、n-壬氧基、n-癸氧基、n-十一烷氧基、n-十二烷氧基、n-十三烷氧基、n-十四烷氧基、n-十五烷氧基、n-十六烷氧基、n-十七烷氧基、n-十八烷氧基、n-十九烷氧基、n-二十烷氧基等。
作為碳數1~20之硫烷氧基(烷硫)基之具體例，可列舉甲硫基、乙硫基、n-丙硫基、異丙硫基、n-丁硫基、異丁硫基、s-丁硫基、t-丁硫基、n-戊硫基、n-己硫基、n-庚基硫基、n-辛硫基、n-壬硫基、n-癸硫基、n-十一烷硫基、n-十二烷硫基、n-十三烷硫基、n-十四烷硫
基、n-十五烷硫基、n-十六烷硫基、n-十七烷硫基、n-十八烷硫基、n-十九烷硫基、n-二十烷硫基等。
作為碳數1~20之醯基之具體例，可列舉甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基、異戊醯基、苯甲醯基等。
在式(H1)，R1~R6較佳為氫原子、鹵素原子、可被Z1取代之碳數1~20之烷基、可被Z2取代之碳數6~20之芳基、-NHY1、-NY2Y3、-OY4、或-SY5，在此情況下，Y1~Y5較佳為可被Z1取代之碳數1~10之烷基或可被Z2取代之碳數6~10之芳基，更佳為可被Z1取代之碳數1~6之烷基或可被Z2取代之苯基，再更佳為碳數1~6之烷基或苯基。
尤其是R1~R6更佳為氫原子、氟原子、甲基、苯基或二苯基胺基(Y2及Y3為苯基之-NY2Y3)，再更佳為R1~R4為氫原子，且R5及R6同時為氫原子或二苯基胺基。
特別在R1~R6及Y1~Y5，Z1較佳為鹵素原子或可被Z3取代之碳數6~10之芳基，更佳為氟原子或苯基，再更佳為不存在(亦即為非取代之基)，又，Z2較佳為鹵素原子或可被Z3取代之碳數1~10之烷基，更佳為氟原子或碳數1~6之烷基，再更佳為不存在(亦即為非取代之基)。
又，Z3較佳為鹵素原子，更佳為氟原子，再更佳為不存在(亦即為非取代之基)。
作為k及l，從提高式(H1)表示之苯胺衍生物的溶解
性的觀點來看，較佳為k+l≦8，更佳為k+l≦5。
在式(H2)，R7~R10較佳為氫原子、鹵素原子、碳數1~4之烷基、碳數1~4之全氟烷基、碳數1~4之烷氧基，更佳為氫原子。
又，考慮提高對於式(H2)表示之苯胺衍生物的溶劑之溶解性，同時提高所得之薄膜的均勻性時，較佳為R11及R13一同為氫原子。
尤其是較佳為R11及R13一同為氫原子，R12及R14分別獨立為苯基(此苯基可被鹵素原子、硝基、氰基、羥基、巰基、磷酸基、磺酸基、羧基、碳數1~20之烷氧基、碳數1~20之硫烷氧基、碳數1~20之烷基、碳數1~20之鹵烷基、碳數2~20之烯基、碳數2~20之炔基、碳數6~20之芳基、碳數7~20之芳烷基、或碳數1~20之醯基取代)、或為上述式(H4)表示之基，更佳為R11及R13一同為氫原子，R12及R14分別獨立為苯基、或R19’及R20’一同為苯基之下述式(H4’)表示之基，再更佳為R11及R13一同為氫原子，R12及R14一同為苯基。
又，作為m，考量化合物的取得容易性、製造的容易性、成本面等時，較佳為2~4，考量提高對溶劑的溶解性時，更佳為2或3，考量化合物的取得容易性、製造的容易性、製造成本、對溶劑的溶解性、所得之薄膜的透明性等之平衡時，2最適合。
在式(H3)，作為R21~R24，較佳為氫原子、氟原子、磺酸基、碳數1~8之烷基、-OY4基、-SiY6Y7Y8基，更佳為氫原子。
又，p、q及r從提高該化合物的溶解性的觀點來看，較佳分別為1以上，且為p+q+r≦20，更佳分別為1以上，且為p+q+r≦10。進而，從表現高度電荷輸送性的觀點來看，較佳分別為1以上，且為5≦p+q+r，更佳為q為1，p及r分別為1以上，且為5≦p+q+r。
式(H1)~(H3)表示之苯胺衍生物或噻吩衍生物雖即使使用市售品，亦可使用藉由上述各公報所記載之方法等之周知的方法所製造者，但即使在任一情況下，於調製電洞捕獲層形成用組成物之前，以使用藉由再結晶或蒸鍍法等純化者較佳。藉由使用純化者，可更提高具備從該組成物所得之薄膜的光感測元件之特性。在再結晶進行純化的情況下，作為溶劑例如可使用1,4-二噁烷、四氫呋喃等。
在本發明之電洞捕獲層形成用組成物，作為式(H1)~(H3)表示之電荷輸送性物質，可單獨使用選自式(H1)~(H3)表示之化合物中之1種的化合物(亦即，分子量
分布的分散度為1)，亦可組合2以上的化合物使用。
尤其是從提高電洞捕獲層的透明性的觀點來看，較佳為使用式(H2)表示之苯胺衍生物，其中更佳為使用上述m為2之聯苯胺衍生物，再更佳為使用下述式(g)表示之二苯基聯苯胺。
作為可適合於本發明使用之電荷輸送性物質之具體例，雖列舉下述者，但並非被限定於此等。
本發明之電洞捕獲層形成用組成物雖為包含上述電荷輸送性物質與有機溶劑者，但因應所得之薄膜的用途，將所得之光感測元件之光電轉換效率提昇等作為目的，可包含電子接受性摻雜劑物質。
電子接受性摻雜劑物質若為溶解於電洞捕獲層形成用組成物所使用之至少一種的溶劑，則並未特別限定。
作為電子接受性摻雜劑物質之具體例，可列
舉氯化氫、硫酸、硝酸、磷酸等之無機強酸；氯化鋁(III)(AlCl3)、四氯化鈦(IV)(TiCl4)、三溴化硼(BBr3)、三氟化硼醚錯合物(BF3．OEt2)、氯化鐵(III)(FeCl3)、氯化銅(II)(CuCl2)、五氯化銻(V)(SbCl5)、五氟化砷(V)(AsF5)、五氟化磷(PF5)、參(4-溴苯基)鋁六氯銻酸鹽(TBPAH)等之路易斯酸；苯磺酸、甲苯磺酸、樟腦磺酸、羥基苯磺酸、5-磺基水楊酸、十二烷基苯磺酸、1,5-萘二磺酸等之萘二磺酸、1,3,5-萘三磺酸，1,3,6-萘三磺酸等之萘三磺酸、聚苯乙烯磺酸、國際公開第2005/000832號所記載之1,4-苯并二噁烷二磺酸化合物、國際公開第2006/025342號所記載之萘或蒽磺酸化合物、日本特開2005-108828號公報所記載之二壬基萘磺酸化合物等之芳基磺酸化合物等之有機強酸；7,7,8,8-四氰醌二甲烷(TCNQ)、2,3-二氯-5,6-二氰基-1,4-苯并醌(DDQ)、碘等之有機氧化劑、國際公開第2010/058777號所記載之磷鉬酸、磷鎢酸、磷鎢鉬酸等之雜聚酸等之無機氧化劑等，可分別組合使用。
其中，從得到良好光電轉換效率的光感測元件的觀點來看，較佳為芳基磺酸化合物，尤其適合式(D1)表示之萘或蒽磺酸化合物、1,3,5-萘三磺酸，1,3,6-萘三磺酸等之萘三磺酸、聚苯乙烯磺酸。
(式中，Z係表示O，A係表示萘環或蒽環，B係表示2~4價之全氟聯苯基，s係表示與A鍵結之磺酸基數，且為滿足1≦s≦4之整數，t係表示B與Z的鍵結數，且為滿足2~4之整數)。
作為可適合使用在本發明之式(D1)表示之萘或蒽磺酸化合物之具體例，雖列舉以下之萘磺酸化合物(式(D2))，但並非被限定於此。
作為電洞捕獲層形成用組成物的調製所使用之有機溶劑，可使用高溶解性溶劑，該高溶解性溶劑係可良好地溶解上述電荷輸送性物質及如有必要所使用之電子接受性摻雜劑物質所得。高溶解性溶劑可單獨1種、或混合2種以上使用，其使用量相對於組成物所使用之溶劑全體可成為5~100質量%。
作為這般之高溶解性溶劑，例如可列舉N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基吡咯烷酮、1,3-二
甲基-2-咪唑啉酮等。
此等當中，較佳為醯胺系溶劑之N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺，更佳為N,N-二甲基乙醯胺。
電荷輸送性物質及電子接受性摻雜劑物質較佳為皆為完全溶解於上述有機溶劑、或成為均勻分散之狀態，考量再現性良好地得到給予高度光電轉換效率的光感測之電洞捕獲層時，此等之物質更佳為完全溶解於上述有機溶劑。
本發明之電洞捕獲層形成用組成物較佳為至少含有一種於25℃具有10~200mPa．s，尤其是具有35~150mPa．s的黏度，於常壓沸點為50~300℃，尤其是150~250℃之高黏度有機溶劑。
高黏度有機溶劑並未特別限定，例如可列舉環己醇、乙二醇、1,3-辛二醇、二乙二醇、二丙二醇、三乙二醇、三丙二醇、1,3-丁二醇、2,3-丁二醇、1,4-丁二醇、丙二醇、己二醇等。
對於本發明之電洞捕獲層形成用組成物所使用之溶劑全體之高黏度有機溶劑的添加比例，較佳為不析出固體的範圍內，只要不析出固體，添加比例較佳為5~80質量%。
進而，以對於塗佈面之潤濕性提昇、溶劑之表面張力的調整、極性的調整、沸點的調整等為目的，亦可將於熱處理時可賦予膜之平坦性的其他溶劑以相對於組
成物所使用之溶劑全體為1~90質量%，較佳為1~50質量%的比例混合。
作為這般之溶劑，例如雖可列舉丁基溶纖劑、二乙二醇二乙基醚、二乙二醇二甲基醚、二乙二醇單乙基醚乙酸鹽、二乙二醇單丁基醚乙酸鹽、二丙二醇單甲基醚、丙二醇單甲基醚、丙二醇單甲基醚乙酸鹽、乙基卡必醇、雙丙酮醇、γ-丁內酯、乙基乳酸酯、n-己基乙酸鹽等，但並非被限定於此等。
本發明之電洞捕獲層形成用組成物從提昇所得之光感測元件的電子阻隔性的觀點來看，理想為包含有機矽烷化合物。
作為有機矽烷化合物，雖可列舉三烷氧基矽烷、二烷氧基矽烷等，但特別是以芳基三烷氧基矽烷、芳基二烷氧基矽烷、含氟原子之三烷氧基矽烷、含氟原子之二烷氧基矽烷化合物較佳，更佳為式(S1)或(S2)表示之矽烷化合物。
[化11]RSi(OCH3)3 (S1) RSi(OC2H5)3 (S2)
(式中，R係表示碳數1~6之氟烷基)。
作為碳數1~6之氟烷基之具體例，可列舉三氟甲基、2,2,2-三氟乙基、1,1,2,2,2-五氟乙基、3,3,3-三氟
丙基、2,2,3,3,3-五氟丙基、1,1,2,2,3,3,3-七氟丙基、4,4,4-三氟丁基、3,3,4,4,4-五氟丁基、2,2,3,3,4,4,4-七氟丁基、1,1,2,2,3,3,4,4,4-九氟丁基等。
作為二烷氧基矽烷化合物之具體例，可列舉二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲基乙基二甲氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、甲基丙基二甲氧基矽烷、甲基丙基二乙氧基矽烷、二異丙基二甲氧基矽烷、苯基甲基二甲氧基矽烷、乙烯基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-(3,4-環氧環己基)乙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、N-(2-胺基乙基)胺基丙基甲基二甲氧基矽烷、3,3,3-三氟丙基甲基二甲氧基矽烷等。
作為三烷氧基矽烷化合物之具體例，可列舉甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、戊基三甲氧基矽烷、戊基三乙氧基矽烷、庚基三甲氧基矽烷、庚基三乙氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、十二烷基三甲氧基矽烷、十二烷基三乙氧基矽烷、十六烷基三甲氧基矽烷、十六烷基三乙氧基矽烷、十八烷基三甲氧基矽烷、十八烷基三乙氧基矽烷、苯基三甲氧基矽
烷、苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、三乙氧基(4-(三氟甲基)苯基)矽烷、十二烷基三乙氧基矽烷、3,3,3-三氟丙基三甲氧基矽烷、(三乙氧基矽烷基)環己烷、全氟辛基乙基三乙氧基矽烷、三乙氧基氟矽烷、十三氟-1,1,2,2-四氫辛基三乙氧基矽烷、3-(七氟異丙氧基)丙基三乙氧基矽烷、十七氟-1,1,2,2-四氫癸基三乙氧基矽烷、三乙氧基-2-噻吩基矽烷、3-(三乙氧基矽烷基)呋喃等。
在本發明，有機矽烷化合物的含量相對於本發明之組成物的電荷輸送性物質及電子接受性摻雜劑物質通常為0.1~200質量%左右，但較佳為1~100質量%，更佳為5~50質量%。
本發明之組成物的固形分濃度雖為考慮組成物的黏度及表面張力等、或製作之薄膜的厚度等而適當設定，但通常為0.1~10.0質量%左右，較佳為0.5~5.0質量%，更佳為1.0~3.0質量%。
尚，所謂固形分，係意指構成電洞捕獲層形成用組成物之有機溶劑以外的成分。
又，電荷輸送性物質與電子接受性摻雜劑物質的物質量(mol)比雖亦為考量表現之電荷輸送性、電荷輸送性物質等之種類而適當設定，但通常相對於電荷輸送性物質
1，電子接受性摻雜劑物質為0.1~10，較佳為0.2~5.0，更佳為0.5~3.0。
而且在本發明所使用之電洞捕獲層形成用組成物的黏度，考量製作之薄膜的厚度等或固形分濃度，雖為因應塗佈方法適當調節，但通常於25℃為0.1~50mPa．s左右。
調製本發明之電洞捕獲層形成用組成物時，只要固形分均勻溶解或分散於溶劑，可用任意之順序混合電荷輸送性物質、電子接受性摻雜劑物質、有機溶劑。亦即，例如只要固形分可均勻溶解或分散於有機溶劑，使電荷輸送性物質溶解於有機溶劑後，使電子接受性摻雜劑物質溶解於其溶液之方法、使電子接受性摻雜劑物質溶解於有機溶劑後，使電荷輸送性物質溶解於其溶液之方法、混合電荷輸送性物質與電子接受性摻雜劑物質後，將其混合物投入有機溶劑使其溶解之方法的任何方法皆可採用。
又，通常、組成物調製雖於常溫、常壓之惰性氣體環境下進行，但只要組成物中之化合物不分解、或組成沒有大幅變更，可於一大氣環境下(氧存在下)進行，亦可邊加熱邊進行。
可藉由將以上說明之電洞捕獲層形成用組成物塗佈於光感測元件之陽極進行燒成，形成本發明之電洞捕獲層。
考量塗佈時之組成物的黏度與表面張力、所期望之薄膜的厚度等時，從滴鑄法、旋塗法、刮塗法、浸塗法、輥塗法、棒塗法、模塗法、噴墨法、印刷法(凸版、凹版、
平版、絲網印刷等)等所謂各種濕式製程法當中採用最適合者即可。
通常，塗佈雖於常溫、常壓之惰性氣體環境下進行，但只要組成物中之化合物不分解、或組成沒有大幅變更，可於一大氣環境下(氧存在下)進行，亦可邊加熱邊進行。
膜厚通常為1~200nm左右，但較佳為3~100nm左右，更佳為5~30nm。作為變更膜厚之方法，有使組成物中之固形分濃度變更、或使塗佈時之溶液量變更等之方法。
以下，對於使用本發明之電洞捕獲層形成用組成物之光感測元件之製造方法進行說明。
作為陽極材料，可使用銦錫氧化物(ITO)、銦鋅氧化物(TZO)等之金屬氧化物、或聚噻吩衍生物、聚苯胺衍生物等之高電荷輸送性有機化合物。又，作為透明基板，可使用由玻璃或者透明樹脂所構成之基板。
陽極材料之層(陽極層)的形成方法因應陽極材料的性質而適當選擇，通常採用使用昇華性化合物之乾式製程(蒸鍍法)或使用包含電荷輸送性化合物之清漆之濕式製程(尤其是旋塗法或狹縫塗佈法)的任一種。
又，作為透明電極亦可適合使用市售品，此情況下，
從使元件之產量提昇的觀點來看，較佳為使用經平滑化處理之基盤。使用市售品的情況下，本發明之有機薄膜太陽能電池的製造方法未包含形成陽極層之步驟。
使用之透明電極較佳為以洗劑、醇、純水等洗淨後使用。例如較佳為於陽極基板，於使用前立即實施UV臭氧處理、氧-電漿處理等之表面處理(陽極材料將有機物作為主成分的情況下，可不進行表面處理)。
依照上述方法，於陽極材料之層上此外本發明之電洞捕獲層形成用組成物形成電洞捕獲層。
光電轉換層即使為層合由n型半導體材料所構成之薄膜即n層、與由p型半導體材料所構成之薄膜即p層者，亦可為由此等材料之混合物所構成之非層合薄膜。
作為n型半導體材料，可列舉富勒烯、[6,6]-苯基-C61-酪酸甲酯(PC61BM)、[6,6]-苯基-C71-酪酸甲酯(PC71BM)等。另一方面，作為p型半導體材料，可列舉於如區域規則(Regioregular)聚(3-己基噻吩)(P3HT)、PTB7、PDTP-DFBT、日本特開2009-158921號公報及國際公開第2010/008672號所記載之含有噻吩并噻吩單位之聚合物類
等之主鏈包含噻吩骨架之聚合物、CuPC,ZnPC等之酞菁類、四苯紫質等之紫質類等。
此等當中，較佳為作為n型材料之PC61BM、PC71BM，作為p型材料之PTB7等之於主鏈包含噻吩骨架之聚合物類。
尚，於此所謂「於主鏈包含噻吩骨架」係表示僅由噻吩所構成之2價芳香環、或包含如噻吩并噻吩、苯并噻吩、二苯并噻吩、苯并二噻吩、萘并噻吩、萘并二噻吩、噻吩蒽、雙噻吩蒽等之1以上之噻吩的2價縮合芳香環，此等可被上述R1~R6表示之取代基取代。
光電轉換層的形成方法係因應n型半導體或者p型半導體材料的性質適當選擇，通常採用使用昇華性化合物之乾式製程(尤其是蒸鍍法)或使用包含材料之清漆的濕式製程(尤其是旋塗法或狹縫塗佈法)之任一種。
(式中，n1及n2係表示重複單元數，表示正之整數)。
如有必要可於光電轉換層與陰極層之間形成電子捕獲層。
作為形成電子捕獲層之材料，可列舉氧化鋰(Li2O)、氧化鎂(MgO)、氧化鋁(Al2O3)、氟化鋰(LiF)、氟化鎂(MgF2)、氟化鍶(SrF2)等。
電子捕獲層的形成方法係因應其材料之性質適當選擇，通常採用使用昇華性化合物之乾式製程(尤其是蒸鍍法)或使用包含材料之清漆之濕式製程(尤其是旋塗法或狹縫塗佈法)之任一種。
作為陰極材料，可列舉鋁、鎂-銀合金、鋁-鋰合金、鋰、鈉、鉀、銫、鈣、鋇、銀、金等，可層合、或混合複數之陰極材料來使用。
陰極層的形成方法雖可因應其材料的性質適當選擇，但通常採用乾式製程(尤其是蒸鍍法)。
如有必要可將控制光電流之整流性等作為目的，於任意之層間設置載波區塊層。
作為形成載波區塊層之材料，可列舉氧化鈦、氧化鋅等。
載波區塊層的形成方法係因應其材料之性質適當選擇，通常使用昇華性化合物的情況下採用乾式製程(尤其是蒸鍍法)，使用溶解材料之清漆的情況下採用旋塗法、或狹縫塗佈法)之任一種。
藉由於上述例示之方法所製得之光感測元件，為了防止因大氣造成之元件劣化，可再度導入手套箱內於氮等之惰性氣體環境下進行密封操作，以經密封之狀態使其發揮作為光感測元件的機能、或進行其特性的測定。
作為密封法，可列舉於惰性氣體環境下，將使UV硬化樹脂附著於端部之凹型玻璃基板附著於有機薄膜太陽能電池元件之成膜面側，藉由UV照射使樹脂硬化之方法、或真空下藉由濺鍍等之手法進行膜密封型之密封之方法等。
以下，雖列舉實施例及比較例，更具體說明本發明，但本發明並非被限定於下述之實施例。尚，使用之裝置係如以下。
(1)手套箱：美國VAC公司製手套箱系統
(2)蒸鍍裝置：青山工程(股)製、真空蒸鍍裝置
(3)測定裝置：(股)小坂研究所製、全自動微細形狀測定機ET-4000A
(4)電流值測定所使用之裝置：Agilent(股)製、4156C精密半導體參數分析儀
(5)光電流測定所使用之光源裝置：分光計器(股)製、SM-250Hyper Mono Light系統
於加入PTB7(1-Material公司製)20mg及PC61BM(Frontier Carbon公司製、製品名：nanom spectra E100)30mg之樣品瓶當中加入氯苯2.0mL，再於80℃之熱板上攪拌15小時。將此溶液放冷至室溫後，加入1,8-二碘辛烷(東京化成工業(股)製)60μL並攪拌，而得到溶液A1(光電轉換層用組成物)。
於N,N-二甲基乙醯胺(以下為DMAc)10.0g加入苯基三甲氧基矽烷(信越化學工業(股)製)0.717mg(3.61mmol)、與3,3,3-三氟丙基三甲氧基矽烷(信越化學工業(股)製)0.394mg(1.81mmol)並於室溫進行攪拌，而得到矽烷化合物溶液S1。
於上述式(d)表示之苯基四苯胺67.1mg(0.152mmol)與依國際公開第2006/025342號記載之方法所合成之(以下相同)上述式(D2)表示之芳基磺酸化合物136.9mg(0.152mmol)的混合物，加入DMAc3.33g與2,3-丁二醇1.67g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入環己醇(以下為CHN)5.0g再攪拌，而得到淡綠色溶液。將所得之淡綠色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B1。
尚，上述式(d)表示之苯基四苯胺係依照日本化學會通報(Bulletin of Chemical Society of Japan)、1994年、第67卷、p.1749-1752所記載之方法合成。
於氧化型苯基三苯胺105.3mg(0.301mmol)與上述式(D2)表示之芳基磺酸化合物204.0mg(0.226mmol)的混合物加入DMAc5.00g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g再攪拌，而得到濃綠色溶液。將所得之濃綠色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B2。
尚，氧化型苯基三苯胺係依照國際公開第2008/010474號所記載之方法合成。
於上述式(c)表示之寡苯胺化合物58.9mg(0.086mmol)與上述式(D2)表示之芳基磺酸化合物160.9mg(0.161mmol)的混合物加入DMAc5.00g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g再攪拌，而得到濃綠色溶液。將所得之濃綠色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B3。
尚，上述式(c)表示之寡苯胺化合物係依照國際公開第2014/141998號所記載之方法合成。
於上述式(c)表示之寡苯胺化合物之氧化型化合物51.4mg(0.075mmol)與上述式(D2)表示之芳基磺酸化合物152.7mg(0.169mmol)的混合物加入DMAc5.00g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g再攪拌，而得到濃綠色溶液。將所得之濃綠色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B4。
尚，上述式(c)表示之寡苯胺化合物之氧化型化合物係依照國際公開第2014/119782號記載之方法合成。
於上述式(g)表示之N,N’-二苯基聯苯胺(東京化成工業(股)製，以下相同)87.0mg(0.259mmol)與上述式(D2)表示之芳基磺酸化合物116.7mg(0.129mmol)的混合物加入DMAc5.0g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g再攪拌，而得到淡黃色溶液。將所得之淡黃色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B5。
於N,N’-二苯基聯苯胺61.0mg(0.181mmol)與上述式(D2)表示之芳基磺酸化合物122.8mg(0.136mmol)的混合物加入DMAc4.82g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g攪拌後，加入於調製例2所得之矽烷化合物溶液S1 0.204g，而得到淡黃色溶液。將所得之淡黃色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B6。
於上述式(1)表示之噻吩衍生物101.2mg(0.228mmol)與上述式(D2)表示之芳基磺酸化合物102.8mg(0.114mmol)的混合物加入DMAc5.0g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g再攪拌，而得到紅橙色溶液。將所得之紅橙色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物
B7。
尚，上述式(1)表示之噻吩衍生物係依照國際公開第2005/043962號記載之方法合成。
於上述式(c)表示之寡苯胺化合物37.4mg(0.055mmol)與5-磺基水楊酸(關東化學(股)製)166.3mg(0.654mmol)的混合物加入DMAc5.00g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN5.0g再攪拌，而得到濃綠色溶液。將所得之濃綠色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B8。
於N,N’-二苯基聯苯胺56.7mg與聚苯乙烯磺酸(富山藥品工業(股)、FUNCHEM PSS、平均分子量14,000)45.4mg的混合物加入DMAc2.5g，於室溫邊照射超音波邊進行攪拌使固形分溶解。進而並對其加入CHN2.5g再攪拌，而得到作為褐色懸濁溶液之電洞捕獲層形成用組成物B9。
於N,N’-二苯基聯苯胺64.5mg與1,3,6-萘三磺酸(富山藥品工業(股)製、FUNCHEM NTSH)37.7mg的混合物加
入DMAc2.5g，於室溫邊照射超音波邊進行攪拌使其溶解。進而並對其加入CHN2.5g再攪拌，而得到褐色溶液。將所得之褐色溶液以孔徑0.2μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物B10。
將照射超音波使其再分散之PEDOT/PSS(Heraeus製Clevios P VP AI 4083)以孔徑0.45μm之注射式過濾器進行過濾，而得到電洞捕獲層形成用組成物C1。
將作為正極之ITO透明導電層圖型化成2mm×20mm之條紋狀之20mm×20mm的玻璃基板進行15分鐘UV/臭氧處理後，於基板上將調製之電洞捕獲層形成用組成物B1藉由旋塗法進行塗佈。將此玻璃基板藉由使用熱板，以於50℃加熱5分鐘，進而於230℃加熱20分鐘，而形成電洞捕獲層。
然後於藉由惰性氣體取代之手套箱中，於形成之電洞捕獲層滴下溶液A1，由旋塗法進行成膜。
其次，將形成有機半導體層之基板與負極用遮罩設置於真空蒸鍍裝置內，排氣至裝置內之真空度成為1×10-3Pa以下為止，藉由電阻加熱法將作為負極之鋁層蒸鍍成80nm之厚度。
最後藉由於熱板以80℃加熱10分鐘，製作條紋狀之ITO層與鋁層交差之部分的面積為2mm×2mm之光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B2，取代於230℃加熱20分鐘，改於120℃加熱10分鐘之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B3之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B4，取代於230℃加熱20分鐘，改於120℃加熱10分鐘之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B5之外，其他以與實施例2-1相同
之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B6之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B7，取代於230℃加熱20分鐘，改於230℃加熱30分鐘之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B8，取代於230℃加熱20分鐘，改於230℃加熱15分鐘之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B9之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物B10之外，其他以與實施例2-1相同之方法，製作光感測元件。
除了取代電洞捕獲層形成用組成物B1，改使用電洞捕獲層形成用組成物C1，取代於230℃加熱20分鐘，改於150℃加熱20分鐘之外，其他以與實施例2-1相同之方法，製作光感測元件。
進行照射製作之光感測元件之暗電流(A/cm2)及波長550nm光時所產生之光電流(A/cm2)的測定，藉由求得光電流與暗電流之比，進行材料之特性評估。將評估結果示於表1。又，各電洞捕獲層的厚度亦一同示於表1。
尚，電流測定係藉由以下之方法進行。將光感測元件設置在光源裝置內，藉由將ITO電極作為陽極，將Al電極作為陰極，記錄施加-1V之電壓時之電流值，來進行。將光未照射時之電流值定為暗電流，將照射波長550nm(光量4.96mW/cm2)之光時之電流值定為光電流來進行量測。
如表1所示，瞭解到於實施例製作之光感測元件與比較例之元件相比較，係抑制暗電流，光電流與暗電流之比較大。
如此，瞭解到藉由使用本發明之電洞捕獲層形成用組成物，可製造感度高之光感測元件。
Claims (9)
- 一種光感測元件，其係具有電洞捕獲層、與和該電洞捕獲層接觸的方式設置之光電轉換層之光感測元件，前述電洞捕獲層係由光感測元件之電洞捕獲層形成用組成物所製作者，前述電洞捕獲層形成用組成物包含分子量200~2,000之電荷輸送性物質、電子接受性摻雜劑物質與有機溶劑，前述電子接受性摻雜劑物質包含芳基磺酸化合物，前述電荷輸送性物質與前述電子接受性摻雜劑物質的物質量(mol)比，相對於電荷輸送性物質1，電子接受性摻雜劑物質為0.1~10，固形分濃度為0.1~10.0質量%。
- 如請求項1之光感測元件，其中，前述電荷輸送性物質為選自苯胺衍生物及噻吩衍生物中之至少一種。
- 如請求項2之光感測元件，前述苯胺衍生物及噻吩衍生物為下述式(H1)、(H2)或(H3)表示者，
- 如請求項1~3中任一項之之光感測元件，其中，前述芳基磺酸化合物為式(D1)表示之萘或是蒽磺酸化合物、萘三磺酸或聚苯乙烯磺酸，
- 如請求項4之光感測元件，其中，前述A係表示萘環。
- 如請求項1~3中任一項之光感測元件，其係包含 有機矽烷化合物。
- 如請求項1~3中任一項之光感測元件，其中，前述光電轉換層係包含富勒烯衍生物。
- 如請求項1~3中任一項之光感測元件，其中，前述光電轉換層係包含於主鏈包含噻吩骨架之聚合物。
- 如請求項1~3中任一項之光感測元件，其中，前述光電轉換層係包含富勒烯衍生物及於主鏈包含噻吩骨架之聚合物。
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