TWI690241B - 透過對於能量吸收劑氣體之碰撞共振能量轉移的電漿之真空紫外線放射調整 - Google Patents

透過對於能量吸收劑氣體之碰撞共振能量轉移的電漿之真空紫外線放射調整 Download PDF

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TWI690241B
TWI690241B TW104137092A TW104137092A TWI690241B TW I690241 B TWI690241 B TW I690241B TW 104137092 A TW104137092 A TW 104137092A TW 104137092 A TW104137092 A TW 104137092A TW I690241 B TWI690241 B TW I690241B
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plasma
processing chamber
neon
helium
vuv
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TW104137092A
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TW201633852A (zh
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安德里斯 費雪
托爾斯滕 立爾
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美商蘭姆研究公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
TW104137092A 2014-11-12 2015-11-11 透過對於能量吸收劑氣體之碰撞共振能量轉移的電漿之真空紫外線放射調整 TWI690241B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/539,121 2014-11-12
US14/539,121 US9609730B2 (en) 2014-11-12 2014-11-12 Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas

Publications (2)

Publication Number Publication Date
TW201633852A TW201633852A (zh) 2016-09-16
TWI690241B true TWI690241B (zh) 2020-04-01

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TW104137092A TWI690241B (zh) 2014-11-12 2015-11-11 透過對於能量吸收劑氣體之碰撞共振能量轉移的電漿之真空紫外線放射調整

Country Status (5)

Country Link
US (2) US9609730B2 (enExample)
JP (1) JP6758818B2 (enExample)
KR (1) KR20160056839A (enExample)
CN (1) CN105590826B (enExample)
TW (1) TWI690241B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI914217B (zh) 2021-04-28 2026-02-01 美商應用材料股份有限公司 用於量測蝕刻參數的系統及方法

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
JP6495025B2 (ja) 2014-01-31 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 真空統合ハードマスク処理および装置
CN112366128B (zh) * 2014-04-09 2024-03-08 应用材料公司 用于在处理腔室中提供对称的流动路径的流动模块
US9870899B2 (en) * 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10020264B2 (en) * 2015-04-28 2018-07-10 Infineon Technologies Ag Integrated circuit substrate and method for manufacturing the same
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
WO2017052905A1 (en) * 2015-09-22 2017-03-30 Applied Materials, Inc. Apparatus and method for selective deposition
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
KR20170122910A (ko) * 2016-04-27 2017-11-07 성균관대학교산학협력단 원자층 식각방법
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US9991129B1 (en) * 2017-05-23 2018-06-05 Applied Materials, Inc. Selective etching of amorphous silicon over epitaxial silicon
US11120999B2 (en) 2017-12-15 2021-09-14 Tokyo Electron Limited Plasma etching method
EP3776636B1 (en) 2018-03-30 2025-05-07 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US11062887B2 (en) * 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
KR102955829B1 (ko) 2018-11-14 2026-04-23 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
WO2020100227A1 (ja) * 2018-11-14 2020-05-22 株式会社日立ハイテクノロジーズ プラズマ処理装置及びそれを用いた被処理試料の処理方法
KR102942164B1 (ko) * 2018-11-15 2026-03-19 램 리써치 코포레이션 할로겐 기반 화합물들을 사용하여 선택적으로 에칭하기 위한 원자 층 에칭 시스템들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
KR102809999B1 (ko) * 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
WO2020223011A1 (en) 2019-04-30 2020-11-05 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
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DE102019214074A1 (de) * 2019-09-16 2021-03-18 Robert Bosch Gmbh Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
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US11538714B2 (en) 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11875967B2 (en) 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11315819B2 (en) * 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
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KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
CN112509901B (zh) * 2020-11-19 2022-03-22 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备
KR20250142946A (ko) 2020-12-08 2025-09-30 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
CN114843164A (zh) * 2021-02-02 2022-08-02 中微半导体设备(上海)股份有限公司 升降销固定器、升降销组件及等离子体处理装置
US12532546B2 (en) * 2021-03-11 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for reduction of photoresist defect
US11502217B1 (en) * 2021-05-24 2022-11-15 Gautam Ganguly Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon
KR102730643B1 (ko) * 2021-12-17 2024-11-14 세메스 주식회사 공정 가스 공급 유닛 및 이를 포함하는 기판 처리 장치
CN121306896B (zh) * 2025-10-16 2026-06-30 上海稷以科技有限公司 一种离子能量控制筛网装置及半导体刻蚀设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20120095586A1 (en) * 2010-10-18 2012-04-19 Tokyo Electron Limited Using vacuum ultra-violet (vuv) data in microwave sources
US20130023125A1 (en) * 2011-07-20 2013-01-24 Harmeet Singh Methods and apparatus for atomic layer etching
US8552334B2 (en) * 2008-02-08 2013-10-08 Lam Research Corporation Adjustable gap capacitively coupled RF plasma reactor including lateral bellows and non-contact particle seal

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629255A (ja) * 1992-07-10 1994-02-04 Hitachi Sci Syst:Kk プラズマエッチング方法及び装置
US6461529B1 (en) * 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
US7160671B2 (en) * 2001-06-27 2007-01-09 Lam Research Corporation Method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity
US7517814B2 (en) * 2005-03-30 2009-04-14 Tokyo Electron, Ltd. Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently
US7740736B2 (en) 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US7732728B2 (en) 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
KR101353012B1 (ko) * 2009-11-17 2014-01-22 가부시키가이샤 히다치 하이테크놀로지즈 시료 처리 장치, 시료 처리 시스템 및 시료의 처리 방법
JP2012149278A (ja) * 2011-01-17 2012-08-09 Mitsui Chemicals Inc シリコン含有膜の製造方法
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US8552334B2 (en) * 2008-02-08 2013-10-08 Lam Research Corporation Adjustable gap capacitively coupled RF plasma reactor including lateral bellows and non-contact particle seal
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20120095586A1 (en) * 2010-10-18 2012-04-19 Tokyo Electron Limited Using vacuum ultra-violet (vuv) data in microwave sources
US20130023125A1 (en) * 2011-07-20 2013-01-24 Harmeet Singh Methods and apparatus for atomic layer etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI914217B (zh) 2021-04-28 2026-02-01 美商應用材料股份有限公司 用於量測蝕刻參數的系統及方法

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CN105590826B (zh) 2018-08-03
CN105590826A (zh) 2016-05-18
US20160135274A1 (en) 2016-05-12
US9609730B2 (en) 2017-03-28
KR20160056839A (ko) 2016-05-20
JP2016103632A (ja) 2016-06-02
TW201633852A (zh) 2016-09-16
JP6758818B2 (ja) 2020-09-23
US20170170036A1 (en) 2017-06-15

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