TWI688069B - 半導體封裝 - Google Patents
半導體封裝 Download PDFInfo
- Publication number
- TWI688069B TWI688069B TW105119367A TW105119367A TWI688069B TW I688069 B TWI688069 B TW I688069B TW 105119367 A TW105119367 A TW 105119367A TW 105119367 A TW105119367 A TW 105119367A TW I688069 B TWI688069 B TW I688069B
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- Taiwan
- Prior art keywords
- layer
- die
- redistribution layer
- redistribution
- contact pad
- Prior art date
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Abstract
一種半導體封裝具有第一重分佈層、第一晶粒、第二重分佈層以及表面塗佈層。第一晶粒包覆在封膠材料內且配置在第一重分佈層上並與第一重分佈層電性連接。第二重分佈層配置在封膠材料上、第一晶粒上並與第一晶粒電性連接。第二重分佈層包括具有至少一接觸墊的最頂金屬化層,而至少一接觸墊包括凹部。表面塗佈層覆蓋最頂金屬化層的一部分且暴露至少一接觸墊的凹部。本發明實施例亦提供一種製造過程。
Description
本發明實施例是有關於一種半導體結構,且特別是有關於一種半導體封裝。
半導體元件用於多種電子應用上,像是個人電腦、手機、數位相機以及其他電子設備。半導體元件通常藉由在半導體基底上依序沈積絕緣層或介電層、導體層以及半導體層或半導體材料,並使用微影法圖案化多種材料層以於半導體基底上形成線路組件以及構件來製備。許多積體電路通常被製造在單一個半導體晶圓上。可將所述晶圓(wafer)的晶粒(dies)在晶圓階段(wafer level)處理與封裝,且用於晶圓級封裝的各種技術業已開發。
本揭露提供一種具有凹部之接觸墊的半導體封裝,其使得焊膏與焊球或凸塊能被準確地定位在接觸墊上,進而改善落球良率(ball drop yield)並提升封裝可靠度。
本發明實施例提供一種半導體封裝具有第一重分佈層、
第一晶粒、第二重分佈層以及表面塗佈層。第一晶粒包覆在封膠材料內並與第一重分佈層耦接。第二重分佈層配置在封膠材料上、第一晶粒上並與第一晶粒耦接。第二重分佈層包括最頂介電材料層與具有至少一接觸墊的最頂金屬化層,且至少一接觸墊包括凹部,其低於最頂介電材料層的頂面。表面塗佈層覆蓋最頂金屬化層的頂側面且暴露至少一接觸墊的凹部。表面塗佈層的一部分從至少一接觸墊的凹部突出。
本發明實施例提供另一種半導體封裝包括:第一晶粒、內連線結構以及至少一導體構件。第一晶粒密封在封膠材料中。內連線結構配置在封膠材料旁,且內連線結構包括多個通孔、第一重分佈層以及第二重分佈層。通孔貫穿封膠材料。第一重分佈層配置在第一晶粒的第一側處,並與通孔連接。第二重分佈層配置在第一晶粒的第二側處、封膠材料上以及第一重分佈層上方,並與通孔連接。第一重分佈層與第二重分佈層藉由通孔連接。第二重分佈層包括具有至少一接觸墊的最頂金屬化層以及表面塗佈層。表面塗佈層覆蓋最頂金屬化層的一部分,而至少一接觸墊包括被表面塗佈層暴露的凹部。至少一導體構件配置在至少一接觸墊的凹部上。至少一接觸墊的凹部暴露出表面塗佈層的側壁的一部分。在第二重分佈層的表面的法線方向上量測從凹部的最低點至第二重分佈層的頂面之間的距離大於在法線方向上的表面塗佈層的側壁的被暴露部分的高度。
本發明實施例提供又一種半導體封裝包括:第一晶粒、
內連線結構以及至少一導體構件。第一晶粒密封在封膠材料中。內連線結構配置在封膠材料旁,且內連線結構包括多個通孔、第一重分佈層以及第二重分佈層。通孔貫穿封膠材料。第一重分佈層配置在第一晶粒的第一側處,並與通孔連接。第二重分佈層配置在第一晶粒的第二側處、封膠材料上以及第一重分佈層上方,並與通孔連接。第一重分佈層與第二重分佈層藉由通孔連接。第二重分佈層包括:具有至少一接觸墊的最頂金屬化層、表面塗佈層以及最頂聚合物介電材料層。表面塗佈層覆蓋最頂金屬化層的頂側面,且暴露至少一接觸墊的凹部。表面塗佈層夾置在最頂聚合物介電材料層與至少一接觸墊的側壁之間。至少一導體構件配置在至少一接觸墊的凹部上。凹部低於最頂聚合物介電材料層的頂面,且至少一導體構件與被凹部暴露的表面塗佈層的側壁的一部分接觸。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
100:半導體封裝
110:保護層
112:載體
114:剝離層
120:第一重分佈層
122:第一聚合物介電材料層
124:金屬化層
126:第二聚合物介電材料層
130:第一晶粒
131:接觸窗
132、232:通孔
140:封膠材料
150:第二重分佈層
152、156、159、252、256、262、264:聚合物介電材料層
152a:開口
154、158、254、258:金屬化層
154a、254a:接觸墊
154b、254b:表面塗佈層
154c、254c:凹部
160、260:導體構件
170:第二晶粒
180:導電連接結構
200:膠帶
290:UBM墊
S130:正面
S150:表面
S154:側壁
S170:頂面
P1、P2:平面
D1:距離
D2:高度
圖1繪示為依照本揭露一些實施例的一種半導體封裝的剖面示意圖。
圖2至圖13為依照本揭露一些實施例的一種半導體封裝的製造過程的各種階段的剖面示意圖。
圖14A至圖14C為圖12的半導體封裝的製造過程的各種階段的部分剖面示意圖。
圖15A為圖1的第二重分佈層的放大部分剖面示意圖。
圖15B為圖15A的第二重分佈層的上視圖。
圖16A為依照本揭露一些實施例的一種第二重分佈層的放大部分剖面示意圖。
圖16B為圖16A的第二重分佈層的上視圖。
以下揭露內容提供用於實施所提供的標的之不同特徵的許多不同實施例或實例。以下所描述的構件及配置的具體實例是為了以簡化的方式傳達本揭露為目的。當然,這些僅僅為實例而非用以限制。舉例來說,於以下描述中,在第一特徵上方或在第一特徵上形成第二特徵可包括第二特徵與第一特徵形成為直接接觸的實施例,且亦可包括第二特徵與第一特徵之間可形成有額外特徵使得第二特徵與第一特徵可不直接接觸的實施例。此外,本揭露在各種實例中可使用相同的元件符號及/或字母來指代相同或類似的部件。元件符號的重複使用是為了簡單及清楚起見,且並不表示所欲討論的各個實施例及/或配置本身之間的關係。
另外,為了易於描述附圖中所繪示的一個構件或特徵與另一組件或特徵的關係,本文中可使用例如「在...下」、「在...下方」、「下部」、「在...上」、「在...上方」、「上部」及類
似術語的空間相對術語。除了附圖中所繪示的定向之外,所述空間相對術語意欲涵蓋元件在使用或操作時的不同定向。設備可被另外定向(旋轉90度或在其他定向),而本文所用的空間相對術語相應地作出解釋。
圖1繪示為依照本揭露一些實施例的一種半導體封裝的剖面示意圖。參照圖1,在一些實施例中,半導體封裝100包括保護層110、第一重分佈層120、第一晶粒130、第二重分佈層150以及至少一導體構件160。在一些實施例中,第一重分佈層120與第二重分佈層150位於第一晶粒130的相對兩側。保護層110覆蓋第一重分佈層120。在一些實施例中,保護層110例如包括玻璃蓋、覆蓋板、硬塗層或任何其他適合的保護膜。在一些實施例中,保護層110更包括功能層,像是偏光膜、彩色膜、抗反射層或防眩光層。保護層110可允許特定波長的光通過。也就是說,依據允許通過的波長,可通過保護層110的光可為不可見光、可見光或不同顏色的光。適合的保護層110是基於設計以及產品需求來選擇。此外,在一些實施例中,黏著層(未繪示)沈積在保護層110與第一重分佈層120之間。黏著層例如包括紫外光(UV)固化膠、熱固化膠、光學透明膠或光熱轉換(light-to-heat conversion,LTHC)膠或類似物,儘管其他類型的膠可被使用。此外,黏著層亦適用於允許光或訊號通過。
在一些實施例中,在圖1中,第一晶粒130夾在第一重分佈層120與第二重分佈層150之間,且第一晶粒130配置在第
一重分佈層120上並與第一重分佈層120電性連接(耦接)。在一些實施例中,第一重分佈層120包括一個或更多個金屬化層以及一個或更多個聚合物基介電層(polymer-based1 dielectric layers)。如圖1所示,第一重分佈層120包括第一聚合物介電材料層122、金屬化層124以及第二聚合物介電材料層126。金屬化層124被夾在第二聚合物介電材料層126與第一聚合物介電材料層122之間。在一些實施例中,金屬化層124的材料包括鋁、鈦、銅、鎳、鎢以及/或其合金。在一些實施例中,聚合物介電材料層的材料包括聚醯亞胺(polyimide,PI)、苯並環丁烯(benzocyclobutene,BCB)、聚苯並噁唑(polybenzooxazole,PBO)或任何其他適合的聚合物基介電材料。
參照圖1,在一些實施例中,第一晶粒130的正面S130面向保護層110。在一實施例中,金屬化層124與位於第一晶粒130的正面S130上的接觸窗131連接,以與第一晶粒130電性連接。在某些實施例中,由於金屬化層124與配置在第一晶粒130的正面S130的周邊處的接觸窗131連接,因此,金屬化層124不會阻擋大部分的第一晶粒130感測光或訊號,而且第一晶粒130仍能接收和偵測通過保護層110的光或訊號。
在一些實施例中,第一晶粒130是一種包括一個或更多個感測器元件的感測器晶片。在某些實施例中,第一晶粒130包括至少一種指紋感測器,像是光學指紋感測器、電容式指紋感測器,或其他適合類型的感測器。在一些實施例中,當第一晶粒130
可偵測或感測通過保護層110的光或訊號,第一晶粒130是一種感測器晶片且第一重分佈層120是正面(front-side)重分佈層。然而,第一晶粒130可以是具有不同功能的其他類型的晶粒或晶片以配合產品設計,在一實施例中,第一晶粒130經配置以面向下(亦即正面S130面向下並朝向保護層110),在如圖1所示的封裝結構中,在此配置中,重分佈層120位於保護層110上。
在一些實施例中,在圖1中,第一晶粒130包覆在封膠材料140內,而貫穿封膠材料140的通孔132與第一重分佈層120以及第二重分佈層150連接。封膠材料140例如包括環氧樹脂或任何其他適合類型的封膠材料。在某些實施例中,通孔132為層間層通孔(through interlayer vias,TIVs),且通孔132可更包括位於通孔132與封膠材料140之間的阻障層(未繪示)。
在一些實施例中,在圖1中,第二重分佈層150配置在封膠材料140上與第一晶粒130上,並藉由通孔132和第一重分佈層120與第一晶粒130電性連接。第二重分佈層150包括一個或更多個金屬化層以及一個或更多個聚合物基介電層。在某些實施例中,第二重分佈層150為背面(back-side)重分佈層,如圖1所示的封裝結構中,在此配置中,第二重分佈層150位於第一晶粒130上方且第二重分佈層150包括至少一個金屬化層154與一個聚合物介電材料層152。在一實施例中,如圖1所示的封裝結構的配置中,金屬化層154是最頂(最外)金屬化層,而聚合物介電材料層152是最頂(最外)聚合物介電材料層。在一些實施例
中,第二重分佈層150更包括夾在其間的聚合物介電材料層156、159以及金屬化層158。第二重分佈層150中的所述層的材料與第一重分佈層120中的所述層的材料相似,於此將不再贅述。
圖15A為圖1的第二重分佈層150的放大部分剖面示意圖。圖15B為圖15A的第二重分佈層150的上視圖,除了導體構件160為了描述目的而被省略之外。參照圖15A與圖15B,在一些實施例中,最頂金屬化層154包括一個或更多個未被最頂聚合物介電材料層152所覆蓋的接觸墊154a,而導體構件160位於接觸墊154a上。在某些實施例中,接觸墊154a包括凹部154c,而位於接觸墊154a上的導體構件160覆蓋凹部154c。在某些實施例中,更包括覆蓋金屬化層154一部分並暴露接觸墊154a的凹部154c的表面塗佈層154b。在一些實施例中,金屬化層154的材料包括銅或銅合金,而表面塗佈層154b包括鈦層與銅層的複合層。然而,表面塗佈層154b的材料可包括鉭或任何適合的阻障材料。
圖14C為圖1的第二重分佈層150的放大剖面示意圖。參照圖14C,接觸墊154a的凹部154c暴露表面塗佈層154b的側壁S154。另外,在平面P1的法線方向上量測從接觸墊154a的凹部154c的球型表面或橢圓表面到沿著第二重分佈層150的頂面S150延伸的平面P1之間具有距離D1。也就是說,距離D1是在垂直於平面P1的方向上從凹部154c的最低點到頂面S150的距離。在平面P1的法線方向上,距離D1大於表面塗佈層154b之被暴露的側壁S154的高度D2。在一些實施例中,距離D1大於或等
於0.1微米,而高度D2大於或等於0.01微米。因此,如圖14C所示,表面塗佈層154b高於接觸墊154a。此外,表面塗佈層154b與接觸墊154a皆低於聚合物介電材料層152的頂面S150。因此,在封裝不同類型的積體電路(像是控制IC或高壓晶片)時,可具有較高的選擇彈性。另外,封裝結構的厚度或是總高度減少,則成本也會降低。在一些實施例中,當接觸墊154a是凹陷的且低於表面S150,焊膏與焊球或凸塊能被準確地定位在接觸墊154a上,因此,改善了落球良率並提升封裝可靠度。
回頭參照圖1,在一些實施例中,半導體封裝100更包括位於最頂金屬化層154的接觸墊154a上的一個或更多個導體構件160以及一個或更多個導電連接結構(electrical connectors)180。雖然圖1呈現4個導體構件160以及4個導電連接結構180,但導體構件160以及導電連接結構180的數量與配置可依佈局或佈線需求來調整。在一些實施例中,導體構件160可例如是放置在被第二重分佈層150的最頂聚合物介電材料層152所暴露的接觸墊154a的凹部154c上的焊球或是球格陣列(ball grid array,BGA),而導體構件160下方的接觸墊154a的功能像是焊球墊(ball pads)。另外,配置在被暴露的部分最頂金屬化層154上的導體構件160以及導電連接結構180與第二重分佈層150電性連接。在一些實施例中,導電連接結構180可例如是凸塊,而導電連接結構180下方的接觸墊154a的功能如凸塊墊(bump pads)。第二晶粒170配置在導電連接結構180上以及第二重分佈層150的上
方,以透過導電連接結構180與第二重分佈層150電性連接。在某些實施例中,相較於位於平坦的接觸墊上的導體構件與導電連接結構而言,當接觸墊154a凹陷如碗狀的凹部154c時,位於凹陷的接觸墊154a上的導體構件160與導電連接結構180的高度變得較低。在某些實施例中,半導體封裝100的總高度變得更小。在一些實施例中,依據第二晶粒170的厚度,導體構件160稍高於或實質上共水平(co-levelled)於第二晶粒170的頂面S170。在一實施例中,從第二晶粒170的頂面S170延伸的平面P2高於導體構件160的最高點。因此,半導體封裝100的總高度減少。在一些實施例中,第二晶粒170為高壓晶片或電壓模組晶片(voltage modulation chip)。然而,本揭露不限於此,而且取決於產品需求,第二晶粒170可以是任何適合的晶片。
貫穿封膠材料140的通孔132與第一重分佈層120以及第二重分佈層150電性連接。在某些實施例中,通孔132與第一重分佈層120以及第二重分佈層150中的金屬化層在一起可構成內連線結構,其與第一晶粒130以及導體構件160電性連接。在一些實施例中,第二晶粒170藉由導電連接結構180與所述內連線結構電性連接,而且第一晶粒130可與第二晶粒170電性連接。在一些實施例中,半導體封裝100可進一步地被上下翻轉並藉由導體構件160連接至並安裝至線路板或系統板(未繪示)上。在此配置中,保護層110面向上,而第一晶粒130檢測或感測光或訊號。
在替代實施例中,半導體封裝100可更包括配置在第一晶粒130上與第二晶粒170旁的額外晶粒,而內連線結構可被調整以與所述額外晶粒電性連接。本揭露的結構不限於只包括第一晶粒130與第二晶粒170。
圖2至圖12為依照本揭露一些實施例的一種半導體封裝的製造過程的各種階段的剖面示意圖。在圖1中所敘述的相同構件將使用相同標號,且相同構件的某些細節與敘述於此將不再贅述。在例示性實施例中,此半導體製造過程為晶圓級封裝製程的一部分。在一些實施例中,晶粒可表示為晶圓的多個晶粒,而單一個封裝可表示為由後續的半導體製造過程所獲得的多個半導體封裝。參照圖2,在一些實施例中,提供載體112,載體112可以是玻璃載體或任何適合用於半導體封裝的製造過程的載體。在一些實施例中,載體112可塗佈一剝離層(debond layer)114。剝離層114的材料可以是任何材料,其適用於將載體112從配置於其上的上述層剝離。接著,於載體112上形成聚合物介電材料層152,且圖案化聚合物介電材料層152,以形成暴露出剝離層114的多個開口152a。
參照圖3,在聚合物介電材料層152上依序形成表面塗佈層154b與金屬化層154,接著圖案化。在某些實施例中,在圖案化之後,表面塗佈層154b共形地(conformally)覆蓋開口152a的輪廓,而金屬化層154填入開口152a且覆蓋部分聚合物介電材料層152。金屬化層154包括至少大於一個接觸墊154a。在某些
實施例中,表面塗佈層154b可藉由沈積法、濺鍍法、電鍍法或任何其他適合的方法形成。在某些實施例中,金屬化層154可藉由電鍍法或沈積法形成。如圖3所示,在形成金屬化層154之前,於聚合物介電材料層152上形成表面塗佈層154b,且表面塗佈層154b覆蓋開口152a。表面塗佈層154b共形地覆蓋金屬化層154的底面。
參照圖4,在一些實施例中,可形成額外的聚合物介電材料層156、159以及額外的金屬化層158。在某些實施例中,於金屬化層154與聚合物介電材料層152上形成聚合物介電材料層156,於聚合物介電材料層156上形成金屬化層158,接著,於金屬化層158與聚合物介電材料層156上形成聚合物介電材料層159。在一實施例中,聚合物介電材料層156、159也具有圖案以容納或暴露金屬化層158,而金屬化層158與金屬化層154連接。在某些實施例中,藉由聚合物介電材料層152、156、159與金屬化層154、158以逐層形成第二重分佈層150。也就是說,參照圖2至圖4,在一些實施例中,藉由將第二重分佈層150的表面S150與剝離層114接觸並面向載體112以在載體112上形成第二重分佈層150。在一些實施例中,第二重分佈層150可包括大於或小於如圖4所示的3個聚合物介電材料層152、156、159。在替代實施例中,第二重分佈層150可包括大於或小於2個金屬化層。金屬化層的數量與聚合物介電材料層的數量可依個別半導體封裝的佈線需求來調整。
參照圖5,在一些實施例中,於第二重分佈層150上形成通孔132且通孔132與第二重分佈層150電性連接。詳細地說,在一些實施例中,在聚合物介電材料層159上形成通孔132且通孔132藉由聚合物介電材料層159的開口與金屬化層158連接。在一些實施例中,通孔132藉由電鍍法、沈積法或任何其他適合的方法來形成。
參照圖6,在一些實施例中,於第二重分佈層150上配置第一晶粒130。在例示性實施例中,第一晶粒130為包括一個或更多個感測器元件的感測器晶片。在某些實施例中,第一晶粒130包括至少一種指紋感測器,像是光學指紋感測器、電容式指紋感測器,或包括電荷耦合元件(charge-coupled devices,CCDs)之其他適合類型的感測器。在一些實施例中,第一晶粒130為感測器晶片且第一晶粒130配置在第二重分佈層150上,使得第一晶粒130的正面S130面向遠離第二重分佈層150(亦即圖6中的面向上)。如圖6的階段所示,第一晶粒130配置在聚合物介電材料層159上,而第一晶粒130的背面接觸第二重分佈層150的聚合物介電材料層159。第一晶粒130不與通孔132接觸。
參照圖7,在一些實施例中,將位於第二重分佈層150上的第一晶粒130與通孔132密封(molded)在封膠材料140中。在一些實施例中,將封膠材料140填入第一晶粒130與通孔132之間的空隙,並覆蓋第二重分佈層150。在一些實施例中,封膠材料140形成在第一晶粒130上並覆蓋第一晶粒130的正面S130。
參照圖8,在一些實施例中,平坦化封膠材料140與通孔132直到暴露出第一晶粒130的正面S130。在一些實施例中,研磨過度密封(over-molded)的封膠材料140與通孔132直到暴露出第一晶粒130的接觸窗131。在一實施例中,通孔132、封膠材料140以及第一晶粒130被處理為實質上共平面。在一些實施例中,封膠材料140、通孔132以及第一晶粒130藉由研磨製程或化學機械研磨(CMP)製程平坦化。在研磨製程之後,可選擇性地進行清潔步驟,例如是清潔並且移除從研磨步驟產生的殘留物。然而,本揭露不限於此,平坦化步驟可藉由其他適合的方法來進行。
參照圖9,於封膠材料140上、第一晶粒130上以及通孔132上形成第一重分佈層120。在一些實施例中,第一重分佈層120與通孔132以及第一晶粒130電性連接。第一重分佈層120的形成包括依序逐層形成第二聚合物介電材料層126、金屬化層124以及第一聚合物介電材料層122。第一重分佈層120的形成方法與第二重分佈層150的形成方法相似,於此便不再贅述。在一些實施例中,金屬化層124與第一晶粒130之被暴露的接觸窗131連接並與第一晶粒130電性連接。在一些實施例中,金屬化層124與通孔132的頂面連接並藉由通孔132與第二重分佈層150電性連接。
接著,參照圖10,在一些實施例中,於第一重分佈層120上配置保護層110,而保護層110與第一聚合物介電材料層122接
觸。在一些實施例中,保護層110例如包括玻璃蓋、覆蓋板、硬塗層或任何其他適合的保護膜。在一些實施例中,保護層110更包括功能層,像是偏光膜、彩色膜、抗反射層或防眩光層。在某些實施例中,保護層110至少允許某些波長的特定訊號或光通過。在一些實施例中,先在第一重分佈層120或保護層110上配置黏著層(未繪示),接著,將保護層110配置在第一重分佈層120上以附著第一重分佈層150。
參照圖11,在一些實施例中,將載體112從第二重分佈層150剝離。由於剝離層114(如圖10所示),使得封裝結構100與載體112容易分離。在一些實施例中,從第二重分佈層150剝離的封裝結構100接著倒置(上下翻轉)並配置在膠帶200上。在一些實施例中,膠帶200可例如是載體膠帶,但膠帶200亦可以是另一適合類型的載體,其用以攜帶從載體112剝離的封裝結構100。如圖11所示,從載體112剝離的剩餘結構被倒置(flipped),使得保護層110直接設置在膠帶200上且面向膠帶200,而第二重分佈層150的表面S150面向上變成頂面,金屬化層154變成第二重分佈層150的最頂金屬化層。最頂金屬化層154的表面塗佈層154b被聚合物介電材料層152所暴露。
參照圖12,在一些實施例中,藉由蝕刻聚合物介電材料層152以暴露最頂金屬化層154。在某些實施例,最頂金屬化層154的接觸墊154a被蝕刻。圖14A至圖14C為圖12的半導體封裝的製造過程的各種階段的部分剖面示意圖。詳細地說,如圖14A
所示,在剝離及倒置之後,包括接觸墊154a以及覆蓋接觸墊154a之表面塗佈層154b的最頂金屬化層154被暴露且易於蝕刻。在圖14B中,進行乾式蝕刻製程以蝕刻表面塗佈層154b的一部分。在一實施例中,表面塗佈層154b包括鈦以及銅。在另一實施例中,表面塗佈層154b為鈦/銅的複合層。在一些實施例中,乾式蝕刻製程包括至少進行鈦乾式蝕刻製程以部分移除被聚合物介電材料層152所暴露的表面塗佈層154b。如圖14B所示,在藉由乾式蝕刻製程以部分移除表面塗佈層154b之後,表面塗佈層154b暴露金屬化層154的接觸墊154a的一部分。在一實施例中,乾式蝕刻製程可藉由例如是使用氟碳系蝕刻劑(fluorocarbon-based etchants),以部分移除表面塗佈層154b。接著,在圖14C中,向被暴露的接觸墊154a進行濕式蝕刻製程,以於接觸墊154a中形成凹部154c。在一些實施例中,濕式蝕刻製程包括鈦濕式蝕刻製程,而濕式蝕刻製程移除被暴露的接觸墊154a的一部分,以於接觸墊154a中形成凹部154c並更移除表面塗佈層154b的一部分。在一些實施例中,濕式蝕刻製程藉由使用例如是磷酸與過氧化氫來進行。然而,本揭露不限於此,而用於乾式或濕式蝕刻法的化學品或反應劑可以是任何其他適合類型之根據配方所選擇的化學品。如圖14C所示,在一些實施例中,可進一步地蝕刻接觸墊154a以形成凹部154c並暴露出表面塗佈層154b的側壁S154。在一實施例中,濕式蝕刻製程期間移除較多的接觸墊154a材料,而移除較少或小的表面塗佈層154b材料。因此,如圖14C所示,在某些
實施例中,表面塗佈層154b高於接觸墊154a,且表面塗佈層154b與接觸墊154a皆低於聚合物介電材料層152的頂面S150。由於接觸墊154a具有凹部154c,因此,於其上隨後形成的焊膏與焊球或凸塊能被準確地定位在接觸墊154a上,藉此改善了落球良率以及封裝可靠度。接觸墊154a的結構與凹部154c已在上述說明提及,而相同內容於此不再贅述。在一些實施例中,形成具有凹部154c的接觸墊154a,而接觸墊154a為金屬化層154的一部分,以當作凸塊墊或焊球墊。
參照圖13,在一些實施例中,導體構件160配置在頂金屬化層154的接觸墊154a上,而第二晶粒170配置在第二重分佈層150的頂面S150上。在一些實施例中,將第二晶粒170配置到金屬化層154之前,導電連接結構180配置在接觸墊154a上,然後,第二晶粒170才配置在金屬化層154上並與導電連接結構180連接。在一些實施例中,在配置導體構件160與導電連接結構180之前,焊膏(未繪示)或助焊劑(flux)施加在接觸墊154a的凹部154c上,使得導電連接結構180與導體構件160更好固定到接觸墊154a。在一些實施例中,由於接觸墊154a的凹部154c,因此,導體構件160以及導電連接結構180可更準確地定位在接觸墊154a上且更好地固定在接觸墊154a上。在一些實施例中,當導體構件160與導電連接結構180配置在較低的接觸墊154a的凹部154c上,可降低封裝結構100的高度並且使得封裝結構100變得更薄。在一些實施例中,導體構件160與第二重分佈層150、第
一重分佈層120以及第一晶粒130電性連接。在一些實施例中,第二晶粒170與第二重分佈層150電性連接,並且可與第一晶粒130電性連接。雖然如上述所獲得的半導體封裝100配置在膠帶200上,但半導體封裝100將與膠帶200分離並在後續製程中切割。在一些實施例中,上述的半導體製造過程為晶圓級封裝製程的一部分,在晶圓切割製程之後可得到多個半導體封裝100。在一些實施例中,在晶圓切割之前,分離膠帶200與半導體封裝100。
圖15A為圖1的第二重分佈層的放大部分剖面示意圖。圖15B為圖15A的第二重分佈層的上視圖,而導體構件160為了描述目的而未繪示於圖15B中。參照圖15A與圖15B,在一些實施例中,導體構件160主要配置在接觸墊154a的凹部154c上。如圖15B所示,接觸墊154a的凹部154c被第二重分佈層150的聚合物介電材料層152所暴露,頂金屬化層154的其餘部分未被聚合物介電材料層152暴露而被聚合物介電材料層152覆蓋。在一些實施例中,被聚合物介電材料層152所覆蓋頂金屬化層154的部分可包括線路、跡線(traces)或其他佈線以與其他金屬化層或通孔132電性連接。
圖16A為依照本揭露一些實施例的一種第二重分佈層的放大部分剖面示意圖。圖16B為圖16A的第二重分佈層的上視圖,而導體構件260為了描述目的而未繪示於圖15B中。參照圖16A與16B,與圖15A與15B的實施例相似,圖16A與16B的第二重分佈層250與圖1的半導體封裝100的第二重分佈層150類似。
圖16A的第二重分佈層250與圖1的第二重分佈層150的不同之處在於:第二重分佈層250更包括夾於聚合物介電材料層252、256之間的凸塊下方金屬化(under bump metallurgies,UBM)墊290。在一些實施例中,當形成第二重分佈層250時,UBM墊290早於金屬化層254形成。在一些實施例中,形成表面塗佈層254b以共形地覆蓋UBM墊290。逐層形成的聚合物介電材料層252、256、262、264與金屬化層254、258與第二重分佈層150的形成過程相似。在某些實施例中,UBM墊290可視為接觸墊與最頂金屬化層。相似地,通孔232的形成與通孔132的形成類似。在一些實施例中,UBM墊290與金屬化層254的接觸墊254a連接。與圖14A至圖14C的描述相似,表面塗佈層254b與UBM墊290可遭遇乾式蝕刻製程與濕式蝕刻製程,以於UBM墊290中形成凹部254c。凹部254c、UBM墊290以及表面塗佈層254b的相對配置以及尺寸與圖14C中所述的凹部154c、接觸墊154a以及表面塗佈層154b的相對配置以及尺寸相似,於此將不再贅述。參照圖16B,在一些實施例中,上視圖中顯示UBM墊290的凹部254c被聚合物介電材料層252所暴露,而UBM墊290的剩餘部分被聚合物介電材料層252所覆蓋。因此,在某些實施例,導體構件260主要配置在UBM墊290的凹部254c上。由於UBM墊290具有凹部254c,因此,焊膏與焊球或凸塊能被準確地定位UBM墊290上以提供較好固定,進而改善了封裝結構的落球良率以及可靠度。
根據一些實施例,一種半導體封裝具有第一重分佈層、
第一晶粒、第二重分佈層以及表面塗佈層。第一晶粒包覆在封膠材料內且配置在第一重分佈層上並與第一重分佈層電性連接。第二重分佈層配置在封膠材料上、第一晶粒上並與第一晶粒電性連接。第二重分佈層包括具有至少一接觸墊的最頂金屬化層,而至少一接觸墊包括凹部。表面塗佈層覆蓋最頂金屬化層的一部分且暴露至少一接觸墊的凹部。
根據一些實施例,一種半導體封裝包括第一晶粒、內連線結構以及至少一導體構件。第一晶粒密封在封膠材料中。內連線結構配置在封膠材料旁,且內連線結構包括多個通孔、第一重分佈層以及第二重分佈層。通孔貫穿封膠材料。第一重分佈層配置在第一晶粒的第一側並與通孔連接。第二重分佈層配置在第一晶粒的第二側、封膠材料上以及第一重分佈層上方並與通孔連接。第一重分佈層與第二重分佈層藉由通孔連接。第二重分佈層包括具有至少一接觸墊的最頂金屬化層以及表面塗佈層。表面塗佈層覆蓋最頂金屬化層的一部分,而至少一接觸墊包括被表面塗佈層暴露的凹部。至少一導體構件配置在至少一接觸墊的凹部上。
根據一些實施例,一種製造過程包括下列步驟。提供載體。於載體上形成第一重分佈層,其中第一重分佈層包括位於載體上的具有至少一接觸墊的金屬化層。於第一重分佈層上形成多個通孔,其中通孔與第一重分佈層電性連接。於第一重分佈層上配置第一晶粒。將第一晶粒與通孔包覆在封膠材料中。於封膠材料上以及第一晶粒的正面上形成第二重分佈層,其中第二重分佈
層與通孔以及第一晶粒電性連接。於第二重分佈層上配置保護層。將載體從第一重分佈層剝離,以暴露金屬化層。蝕刻第一重分佈層的金屬化層,以於至少一接觸墊中形成凹部。
以上概述了數個實施例的特徵,使本領域具有通常知識者可更佳了解本揭露的態樣。本領域具有通常知識者應理解,其可輕易地使用本揭露作為設計或修改其他製程與結構的依據,以實行本文所介紹的實施例的相同目的及/或達到相同優點。本領域具有通常知識者還應理解,這種等效的配置並不悖離本揭露的精神與範疇,且本領域具有通常知識者在不悖離本揭露的精神與範疇的情況下可對本文做出各種改變、置換以及變更。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧半導體封裝
110‧‧‧保護層
120‧‧‧第一重分佈層
122‧‧‧第一聚合物介電材料層
124‧‧‧金屬化層
126‧‧‧第二聚合物介電材料層
130‧‧‧第一晶粒
131‧‧‧接觸窗
132‧‧‧通孔
140‧‧‧封膠材料
150‧‧‧第二重分佈層
152、156、159‧‧‧聚合物介電材料層
154、158‧‧‧金屬化層
154a‧‧‧接觸墊
154b‧‧‧表面塗佈層
160‧‧‧導體構件
170‧‧‧第二晶粒
180‧‧‧導電連接結構
S130‧‧‧正面
S170‧‧‧頂面
P2‧‧‧平面
Claims (10)
- 一種半導體封裝,包括:第一重分佈層;第一晶粒,包覆在封膠材料內並與所述第一重分佈層耦接;第二重分佈層,配置在所述封膠材料上、所述第一晶粒上並與所述第一晶粒耦接,其中所述第二重分佈層包括最頂介電材料層與具有至少一接觸墊的最頂金屬化層,而所述至少一接觸墊包括凹部,所述凹部低於所述最頂介電材料層的頂面;以及表面塗佈層,覆蓋所述最頂金屬化層的頂側面且暴露所述至少一接觸墊的所述凹部,而所述表面塗佈層的一部分從所述至少一接觸墊的所述凹部突出。
- 如申請專利範圍第1項所述的半導體封裝,更包括第二晶粒,配置在所述第二重分佈層上且與所述第二重分佈層電性連接。
- 如申請專利範圍第2項所述的半導體封裝,更包括至少一導體構件,配置在所述至少一接觸墊的所述凹部上。
- 如申請專利範圍第1項所述的半導體封裝,更包括至少一通孔貫穿所述封膠材料,並與所述第一重分佈層與所述第二重分佈層電性連接。
- 如申請專利範圍第1項所述的半導體封裝,其中所述第一晶粒為感測器晶片。
- 一種半導體封裝,包括:第一晶粒密封在封膠材料中; 內連線結構,配置在所述封膠材料旁,其中所述內連線結構包括:多個通孔,貫穿所述封膠材料;第一重分佈層,配置在所述第一晶粒的第一側處,並與所述通孔連接;以及第二重分佈層,配置在所述第一晶粒的第二側處、所述封膠材料上以及所述第一重分佈層上方,並與所述通孔連接,其中所述第一重分佈層與所述第二重分佈層藉由所述通孔連接,且所述第二重分佈層包括:具有至少一接觸墊的最頂金屬化層與表面塗佈層,且所述表面塗佈層覆蓋所述最頂金屬化層的一部分,而所述至少一接觸墊包括被所述表面塗佈層暴露的凹部;以及至少一導體構件,配置在所述至少一接觸墊的所述凹部上,其中所述至少一接觸墊的所述凹部暴露出所述表面塗佈層的側壁的一部分,而在所述第二重分佈層的表面的法線方向上量測從所述凹部的最低點至所述第二重分佈層的頂面之間的距離大於在所述法線方向上的所述表面塗佈層的所述側壁的被暴露部分的高度。
- 如申請專利範圍第6項所述的半導體封裝,更包括第二晶粒,配置在所述第二重分佈層的所述最頂金屬化層上且與所述第二重分佈層的所述最頂金屬化層電性連接。
- 如申請專利範圍第7項所述的半導體封裝,其中平行於所述第二晶粒的表面的平面高於所述至少一導體構件的最高點。
- 一種半導體封裝,包括: 第一晶粒密封在封膠材料中;內連線結構,配置在所述封膠材料旁,其中所述內連線結構包括:多個通孔,貫穿所述封膠材料;第一重分佈層,配置在所述第一晶粒的第一側處,並與所述通孔連接;以及第二重分佈層,配置在所述第一晶粒的第二側處、所述封膠材料上以及所述第一重分佈層上方,並與所述通孔連接,其中所述第一重分佈層與所述第二重分佈層藉由所述通孔連接,且所述第二重分佈層包括:具有至少一接觸墊的最頂金屬化層與表面塗佈層,其中所述表面塗佈層覆蓋所述最頂金屬化層的頂側面,且暴露所述至少一接觸墊的凹部;以及最頂聚合物介電材料層,其中所述表面塗佈層夾置在所述最頂聚合物介電材料層與所述至少一接觸墊的側壁之間;以及至少一導體構件,配置在所述至少一接觸墊的所述凹部上,其中所述凹部低於所述最頂聚合物介電材料層的頂面,且所述至少一導體構件與被所述凹部暴露的所述表面塗佈層的側壁的一部分接觸。
- 如申請專利範圍第9項所述的半導體封裝,更包括第二晶粒,配置在所述第二重分佈層的所述最頂金屬化層上且與所述第二重分佈層的所述最頂金屬化層電性連接。
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CN107221521A (zh) | 2017-09-29 |
US20170271248A1 (en) | 2017-09-21 |
TW201742223A (zh) | 2017-12-01 |
US10707094B2 (en) | 2020-07-07 |
CN107221521B (zh) | 2021-01-26 |
US10276402B2 (en) | 2019-04-30 |
US20190252209A1 (en) | 2019-08-15 |
US11171016B2 (en) | 2021-11-09 |
US20200303211A1 (en) | 2020-09-24 |
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