TWI686264B - 用於聲學監控及控制直通矽穿孔之顯露處理的設備及方法 - Google Patents

用於聲學監控及控制直通矽穿孔之顯露處理的設備及方法 Download PDF

Info

Publication number
TWI686264B
TWI686264B TW103115201A TW103115201A TWI686264B TW I686264 B TWI686264 B TW I686264B TW 103115201 A TW103115201 A TW 103115201A TW 103115201 A TW103115201 A TW 103115201A TW I686264 B TWI686264 B TW I686264B
Authority
TW
Taiwan
Prior art keywords
acoustic
substrate
silicon via
chemical mechanical
mechanical polishing
Prior art date
Application number
TW103115201A
Other languages
English (en)
Chinese (zh)
Other versions
TW201503995A (zh
Inventor
周松佑
蘇布拉曼寧科米塞堤
馬哈珍尤戴
史威克柏格斯勞A
巴札拉吉菲
鄧健攝
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201503995A publication Critical patent/TW201503995A/zh
Application granted granted Critical
Publication of TWI686264B publication Critical patent/TWI686264B/zh

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/0053Control means for lapping machines or devices detecting loss or breakage of a workpiece during lapping

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW103115201A 2013-05-01 2014-04-28 用於聲學監控及控制直通矽穿孔之顯露處理的設備及方法 TWI686264B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/874,495 2013-05-01
US13/874,495 US20140329439A1 (en) 2013-05-01 2013-05-01 Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing

Publications (2)

Publication Number Publication Date
TW201503995A TW201503995A (zh) 2015-02-01
TWI686264B true TWI686264B (zh) 2020-03-01

Family

ID=51841646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103115201A TWI686264B (zh) 2013-05-01 2014-04-28 用於聲學監控及控制直通矽穿孔之顯露處理的設備及方法

Country Status (6)

Country Link
US (1) US20140329439A1 (https=)
JP (1) JP6397896B2 (https=)
KR (1) KR102242321B1 (https=)
CN (1) CN105164794B (https=)
TW (1) TWI686264B (https=)
WO (1) WO2014179241A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9403254B2 (en) * 2011-08-17 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for real-time error detection in CMP processing
US10478937B2 (en) * 2015-03-05 2019-11-19 Applied Materials, Inc. Acoustic emission monitoring and endpoint for chemical mechanical polishing
KR102333209B1 (ko) 2015-04-28 2021-12-01 삼성디스플레이 주식회사 기판 연마 장치
KR102401388B1 (ko) * 2016-06-24 2022-05-24 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 슬러리 분배 디바이스
JP7312103B2 (ja) * 2016-09-15 2023-07-20 アプライド マテリアルズ インコーポレイテッド 化学機械研磨スマートリング
US10695907B2 (en) * 2017-09-29 2020-06-30 Intel Corporation Methods and apparatus for monitoring robot health in manufacturing environments
US11565365B2 (en) * 2017-11-13 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for monitoring chemical mechanical polishing
CN108188931A (zh) * 2017-12-22 2018-06-22 华侨大学 双面行星磨削/研磨加工中工件破碎的在线控制系统
WO2019152222A1 (en) * 2018-02-05 2019-08-08 Applied Materials, Inc. Piezo-electric end-pointing for 3d printed cmp pads
KR102677387B1 (ko) 2018-03-13 2024-06-24 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마 동안 진동들의 모니터링
JP7116645B2 (ja) * 2018-09-12 2022-08-10 キオクシア株式会社 研磨装置
JP7325913B2 (ja) * 2019-11-22 2023-08-15 株式会社ディスコ ウェーハ加工装置
US11289387B2 (en) * 2020-07-31 2022-03-29 Applied Materials, Inc. Methods and apparatus for backside via reveal processing
JP7682641B2 (ja) * 2021-02-22 2025-05-26 株式会社荏原製作所 基板処理装置
JP7690297B2 (ja) 2021-02-22 2025-06-10 キオクシア株式会社 基板処理の制御方法
KR102937575B1 (ko) 2021-03-03 2026-03-11 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 음향 모니터링 및 센서들
KR20240025694A (ko) * 2021-07-06 2024-02-27 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 음향 윈도우를 포함하는 연마 패드
CN117597215A (zh) 2021-07-06 2024-02-23 应用材料公司 使用光学传感器的化学机械抛光振动测量
US12403561B2 (en) 2022-03-09 2025-09-02 Applied Materials, Inc. Eddy current monitoring to detect vibration in polishing
WO2023234974A1 (en) 2022-06-03 2023-12-07 Applied Materials, Inc. Determining substrate orientation with acoustic signals

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62292348A (ja) * 1986-06-11 1987-12-19 メセルトン・エス ア− 工作機械の工具部の動く速さを制御する装置
US6488569B1 (en) * 1999-07-23 2002-12-03 Florida State University Method and apparatus for detecting micro-scratches in semiconductor wafers during polishing process
TW536454B (en) * 2001-02-14 2003-06-11 Taiwan Semiconductor Mfg Apparatus and method for detecting polishing endpoint of chemical-mechanical planarization/polishing of wafer
US6585562B2 (en) * 2001-05-17 2003-07-01 Nevmet Corporation Method and apparatus for polishing control with signal peak analysis
US7118457B2 (en) * 2000-05-19 2006-10-10 Applied Materials, Inc. Method of forming a polishing pad for endpoint detection
TW201029808A (en) * 2008-12-12 2010-08-16 Asahi Glass Co Ltd Grinding device, grinding method, and method of manufacturing glass sheet

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249833A (ja) * 1995-03-28 2011-12-08 Applied Materials Inc Cmpプロセス中のインシチュウ終点検出に用いるポリッシングパッド
JP3431115B2 (ja) * 1995-03-28 2003-07-28 アプライド マテリアルズ インコーポレイテッド ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法
US6910942B1 (en) * 1997-06-05 2005-06-28 The Regents Of The University Of California Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus
JPH11183447A (ja) * 1997-12-19 1999-07-09 Nippei Toyama Corp 被加工材の割れ発生予知方法及びこれを利用したウエハの加工方法並びに研削盤
JPH11254311A (ja) * 1998-03-09 1999-09-21 Super Silicon Kenkyusho:Kk 研磨時の薄板状ワーク破損防止方法
JPH11254304A (ja) * 1998-03-10 1999-09-21 Super Silicon Kenkyusho:Kk センサを組み込んだ定盤
JP2000306963A (ja) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp 半導体装置及びその製造方法並びに半導体製造装置及び製造システム
JP3292243B2 (ja) * 1999-06-30 2002-06-17 日本電気株式会社 研磨終点検出装置
US6924641B1 (en) * 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US6485354B1 (en) * 2000-06-09 2002-11-26 Strasbaugh Polishing pad with built-in optical sensor
US6424137B1 (en) * 2000-09-18 2002-07-23 Stmicroelectronics, Inc. Use of acoustic spectral analysis for monitoring/control of CMP processes
US20020090889A1 (en) * 2001-01-10 2002-07-11 Crevasse Annette M. Apparatus and method of determining an endpoint during a chemical-mechanical polishing process
JP2003086551A (ja) * 2001-09-07 2003-03-20 Mitsubishi Electric Corp 半導体研磨装置、半導体研磨の終点検出方法および研磨ヘッドのドレスの終点検出方法
US6646737B2 (en) * 2001-09-24 2003-11-11 Kla-Tencor Technologies Submicron dimensional calibration standards and methods of manufacture and use
US6660539B1 (en) * 2001-11-07 2003-12-09 Advanced Micro Devices, Inc. Methods for dynamically controlling etch endpoint time, and system for accomplishing same
US6586337B2 (en) * 2001-11-09 2003-07-01 Speedfam-Ipec Corporation Method and apparatus for endpoint detection during chemical mechanical polishing
US6722946B2 (en) * 2002-01-17 2004-04-20 Nutool, Inc. Advanced chemical mechanical polishing system with smart endpoint detection
US6878039B2 (en) * 2002-01-28 2005-04-12 Speedfam-Ipec Corporation Polishing pad window for a chemical-mechanical polishing tool
US6808590B1 (en) * 2002-06-28 2004-10-26 Lam Research Corporation Method and apparatus of arrayed sensors for metrological control
US7011566B2 (en) * 2002-08-26 2006-03-14 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US6991514B1 (en) * 2003-02-21 2006-01-31 Verity Instruments, Inc. Optical closed-loop control system for a CMP apparatus and method of manufacture thereof
US7537511B2 (en) * 2006-03-14 2009-05-26 Micron Technology, Inc. Embedded fiber acoustic sensor for CMP process endpoint
KR20090026266A (ko) * 2006-05-03 2009-03-12 에스티. 로렌스 나노테크놀로지, 인크. 폴리싱 개별 다이의 능력을 이용하여 대형 웨이퍼를 화학적기계적으로 폴리싱하기 위한 방법 및 장치
US7887392B2 (en) * 2007-06-06 2011-02-15 Novellus Systems, Inc. Platen assembly and work piece carrier head employing flexible circuit sensor
US8106651B2 (en) * 2008-04-17 2012-01-31 Novellus Systems, Inc. Methods and apparatuses for determining thickness of a conductive layer
WO2009137764A2 (en) * 2008-05-08 2009-11-12 Applied Materials, Inc. Cmp pad thickness and profile monitoring system
DE102009015718B4 (de) * 2009-03-31 2012-03-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Testsystem und Verfahren zum Verringern der Schäden in Saatschichten in Metallisierungssystemen von Halbleiterbauelementen

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62292348A (ja) * 1986-06-11 1987-12-19 メセルトン・エス ア− 工作機械の工具部の動く速さを制御する装置
US6488569B1 (en) * 1999-07-23 2002-12-03 Florida State University Method and apparatus for detecting micro-scratches in semiconductor wafers during polishing process
US7118457B2 (en) * 2000-05-19 2006-10-10 Applied Materials, Inc. Method of forming a polishing pad for endpoint detection
TW536454B (en) * 2001-02-14 2003-06-11 Taiwan Semiconductor Mfg Apparatus and method for detecting polishing endpoint of chemical-mechanical planarization/polishing of wafer
US6585562B2 (en) * 2001-05-17 2003-07-01 Nevmet Corporation Method and apparatus for polishing control with signal peak analysis
TW201029808A (en) * 2008-12-12 2010-08-16 Asahi Glass Co Ltd Grinding device, grinding method, and method of manufacturing glass sheet

Also Published As

Publication number Publication date
JP6397896B2 (ja) 2018-09-26
US20140329439A1 (en) 2014-11-06
CN105164794B (zh) 2019-01-11
CN105164794A (zh) 2015-12-16
JP2016517185A (ja) 2016-06-09
TW201503995A (zh) 2015-02-01
KR20160003247A (ko) 2016-01-08
KR102242321B1 (ko) 2021-04-21
WO2014179241A1 (en) 2014-11-06

Similar Documents

Publication Publication Date Title
TWI686264B (zh) 用於聲學監控及控制直通矽穿孔之顯露處理的設備及方法
US20160013085A1 (en) In-Situ Acoustic Monitoring of Chemical Mechanical Polishing
US5245794A (en) Audio end point detector for chemical-mechanical polishing and method therefor
CN1505110A (zh) 化学机械研磨方法和化学机械研磨装置
US6488569B1 (en) Method and apparatus for detecting micro-scratches in semiconductor wafers during polishing process
TWI849385B (zh) 用於化學機械拋光的聲學監控和感測器
JP2002160154A (ja) Cmp処理のモニタ/制御に対する音響分光分析の使用
US10875143B2 (en) Apparatus and methods for chemical mechanical polishing
WO1998055264A1 (en) Semiconductor wafer cmp process monitoring and endpoint
US20230010025A1 (en) Detection of planarization from acoustic signal during chemical mechanical polishing
KR20240160616A (ko) 연마에서 진동을 검출하기 위한 와전류 모니터링
JP2001198813A (ja) 研磨装置及びその研磨方法
KR101140771B1 (ko) 기판 처리 방법과 기판 처리 장치
US6198294B1 (en) In-situ backgrind wafer thickness monitor
JP7815413B2 (ja) 化学機械研磨のための音響センサの結合
TWI914776B (zh) 化學機械拋光設備、其方法、及非暫時性電腦可讀取媒體
JP2003037090A (ja) 半導体集積回路装置の製造方法
US20240424635A1 (en) Polishing method, polishing apparatus, and non-transitory computer-readable recording medium
US20250062163A1 (en) Acoustic monitoring for process reliability during polishing
KR20260053345A (ko) 연마 동안의 프로세스 신뢰성을 위한 음향 모니터링
KR20070023859A (ko) 반도체 웨이퍼 연마용 웨이퍼 캐리어 및 모니터링 장치
CN117381668A (zh) 硅片载具厚度检测方法及装置、双面抛光设备
CN119317512A (zh) 抛光期间对调节器的声学监测
KR20060075599A (ko) 연마 패드 이상 정보 검출 방법 및 장치