TWI674654B - 用以接合裸晶片晶粒之方法 - Google Patents

用以接合裸晶片晶粒之方法 Download PDF

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Publication number
TWI674654B
TWI674654B TW102140687A TW102140687A TWI674654B TW I674654 B TWI674654 B TW I674654B TW 102140687 A TW102140687 A TW 102140687A TW 102140687 A TW102140687 A TW 102140687A TW I674654 B TWI674654 B TW I674654B
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Taiwan
Prior art keywords
connection pad
substrate
pad structure
bonding
connection
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TW102140687A
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English (en)
Chinese (zh)
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TW201426920A (zh
Inventor
艾德斯格Ｃ Ｐ 史密茲
Edsger Constant Pieter Smits
桑迪普Ｍ 珀英曲瑞
Sandeep Menon Perinchery
傑若恩 凡德布蘭德
Jeroen Van Den Brand
拉節許 曼丹帕朗皮
Rajesh Mandamparambil
哈瑪納斯Ｆ Ｍ 西后
Harmannus Franciscus Maria Schoo
Original Assignee
荷蘭商荷蘭Ｔｎｏ自然科學組織公司
Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno
校際微電子研究中心
Imec Vzw
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Publication of TW201426920A publication Critical patent/TW201426920A/zh
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Publication of TWI674654B publication Critical patent/TWI674654B/zh

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    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/262—Sn as the principal constituent
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    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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    • H10H20/80—Constructional details
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TW102140687A 2012-11-09 2013-11-08 用以接合裸晶片晶粒之方法 TWI674654B (zh)

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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2471568B1 (es) * 2012-11-22 2015-08-21 Abengoa Solar New Technologies S.A. Procedimiento para la creación de contactos eléctricos y contactos así creados
TWI561325B (en) * 2014-08-01 2016-12-11 Au Optronics Corp Display module manufacturing method and display module
EP3207563A4 (en) * 2014-10-17 2018-05-30 Intel Corporation Micro pick and bond assembly
EP3322835A4 (en) * 2015-07-09 2019-02-27 Orbotech Ltd. CONTROL OF THE LIFTING EQUIPMENT ANGLE
DE102016103324A1 (de) * 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls
US9916989B2 (en) 2016-04-15 2018-03-13 Amkor Technology, Inc. System and method for laser assisted bonding of semiconductor die
WO2017188125A1 (ja) * 2016-04-27 2017-11-02 セイコーエプソン株式会社 実装構造体、超音波デバイス、超音波探触子、超音波装置、及び電子機器
US10032827B2 (en) 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
US11060193B2 (en) * 2016-11-23 2021-07-13 Institut National De La Recherche Scientifique Method and system of laser-driven impact acceleration
CN108346640B (zh) * 2017-01-25 2020-02-07 华邦电子股份有限公司 半导体结构及其制作方法
WO2018231344A1 (en) 2017-06-12 2018-12-20 Uniqarta, Inc. Parallel assembly of discrete components onto a substrate
US11201077B2 (en) 2017-06-12 2021-12-14 Kulicke & Soffa Netherlands B.V. Parallel assembly of discrete components onto a substrate
CN110546771B (zh) * 2017-06-15 2022-04-08 歌尔股份有限公司 微发光二极管转移方法、微发光二极管装置和电子设备
US10163773B1 (en) 2017-08-11 2018-12-25 General Electric Company Electronics package having a self-aligning interconnect assembly and method of making same
CN109994413A (zh) * 2017-12-29 2019-07-09 南昌欧菲显示科技有限公司 微型元件巨量转移方法
TWI688317B (zh) * 2018-10-31 2020-03-11 台灣愛司帝科技股份有限公司 發光二極體晶片的固接方法及固接裝置
CN113690149A (zh) * 2020-05-16 2021-11-23 佛山市国星光电股份有限公司 一种芯片键合结构、方法及设备
US11627667B2 (en) * 2021-01-29 2023-04-11 Orbotech Ltd. High-resolution soldering
WO2021245467A1 (en) * 2020-06-04 2021-12-09 Orbotech Ltd. High-resolution soldering
US20220347778A1 (en) * 2020-06-28 2022-11-03 Orbotech Ltd. Laser Printing of Solder Pastes
CN113451274B (zh) * 2020-10-28 2022-08-05 重庆康佳光电技术研究院有限公司 Led芯片组件、显示面板及制备方法
US11631650B2 (en) * 2021-06-15 2023-04-18 International Business Machines Corporation Solder transfer integrated circuit packaging
DE102021119155A1 (de) * 2021-07-23 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum aufbringen eines elektrischen verbindungsmaterials oder flussmittels auf ein bauelement
CN116072794A (zh) * 2021-11-02 2023-05-05 重庆康佳光电技术研究院有限公司 显示面板修补方法及系统
TW202343603A (zh) * 2022-02-18 2023-11-01 日商迪睿合股份有限公司 連接結構體之製造方法及單片化接著膜之轉印方法
CN220456411U (zh) * 2022-05-12 2024-02-06 意法半导体股份有限公司 半导体设备
IT202200009839A1 (it) 2022-05-12 2023-11-12 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN115579440B (zh) * 2022-12-09 2023-07-18 惠科股份有限公司 Led芯片、刷料装置及led芯片的刷料固晶方法
CN116364561B (zh) * 2023-06-01 2023-09-08 湖北三维半导体集成创新中心有限责任公司 键合方法及键合结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5873511A (en) * 1997-05-08 1999-02-23 Shapiro; Herbert M. Apparatus and method for forming solder bonding pads
US7348270B1 (en) * 2007-01-22 2008-03-25 International Business Machines Corporation Techniques for forming interconnects

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138084A (en) 1966-07-22 1968-12-27 Standard Telephones Cables Ltd Method of vapour depositing a material in the form of a pattern
US4752455A (en) 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
US6537720B1 (en) 1989-03-30 2003-03-25 Polaroid Graphics Imaging Llc Ablation-transfer imaging/recording
US4987006A (en) 1990-03-26 1991-01-22 Amp Incorporated Laser transfer deposition
WO1995005623A1 (en) 1993-08-13 1995-02-23 Rexham Graphics Inc. Ablation transfer onto intermediate receptors
DE4330961C1 (de) 1993-09-09 1994-07-28 Krone Ag Verfahren zur Herstellung von strukturierten Metallisierungen auf Oberflächen
JP2540787B2 (ja) * 1994-07-22 1996-10-09 日本電気株式会社 半導体装置の製造方法
US5685939A (en) * 1995-03-10 1997-11-11 Minnesota Mining And Manufacturing Company Process for making a Z-axis adhesive and establishing electrical interconnection therewith
JPH09129649A (ja) 1995-11-06 1997-05-16 Matsushita Electric Ind Co Ltd 接合材料供給方法及び実装方法
WO1998005068A1 (en) * 1996-07-26 1998-02-05 Philips Electronics N.V. Method of manufacturing and transferring metallic droplets
JPH1070151A (ja) * 1996-08-26 1998-03-10 Ricoh Co Ltd 導電粒子の配列方法及びその装置
US6159832A (en) 1998-03-18 2000-12-12 Mayer; Frederick J. Precision laser metallization
US6060127A (en) 1998-03-31 2000-05-09 Matsushita Electric Industrial Co., Ltd. Mechanically restricted laser deposition
AU2514900A (en) 1999-01-27 2000-08-18 United States Of America As Represented By The Secretary Of The Navy, The Fabrication of conductive/non-conductive nanocomposites by laser evaporation
US6936311B2 (en) 1999-01-27 2005-08-30 The United States Of America As Represented By The Secretary Of The Navy Generation of biomaterial microarrays by laser transfer
US6792326B1 (en) * 1999-05-24 2004-09-14 Potomac Photonics, Inc. Material delivery system for miniature structure fabrication
US7014885B1 (en) 1999-07-19 2006-03-21 The United States Of America As Represented By The Secretary Of The Navy Direct-write laser transfer and processing
DE19946182C2 (de) 1999-09-21 2003-07-03 Forschungsverbund Berlin Ev Verfahren zur Herstellung von Kohlenstoff Nanoröhren
JP2001237279A (ja) 2000-02-23 2001-08-31 Hitachi Ltd 半導体装置及びそれを用いた電子装置
US6649861B2 (en) 2000-05-24 2003-11-18 Potomac Photonics, Inc. Method and apparatus for fabrication of miniature structures
WO2003101165A1 (en) 2000-07-20 2003-12-04 The United States Of America As Represented By The Secretary Of The Navy Direct-write laser transfer and processing
JP2003077940A (ja) 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
AT411755B (de) 2001-12-21 2004-05-25 Baeuerle Dieter Dr Vorrichtung und verfahren zum modifizieren einer werkstück-oberfläche mit hilfe von photonen-strahlung
GR1004059B (el) 2001-12-31 2002-11-15 Ιωαννα Ζεργιωτη Κατασκευη βιοπολυμερικων σχηματων μεσω εναποθεσης με λειζερ.
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
US20040022947A1 (en) 2002-08-01 2004-02-05 Duignan Michael T. Method for creating microstructure patterns by contact transfer technique
US6939660B2 (en) 2002-08-02 2005-09-06 Eastman Kodak Company Laser thermal transfer donor including a separate dopant layer
DE10237732B4 (de) 2002-08-17 2004-08-26 BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH Laserstrahlmarkierungsverfahren sowie Markierungsvorrichtung zur Laserstrahlmarkierung eines Zielsubstrats
US20040250769A1 (en) 2002-10-28 2004-12-16 Finisar Corporation Pulsed laser deposition for mass production
WO2004080725A1 (en) 2003-03-13 2004-09-23 Koninklijke Philips Electronics N.V. Marking method and market object
US7294367B2 (en) 2003-06-06 2007-11-13 The United States Of America As Represented By The Secretary Of The Navy Biological laser printing via indirect photon-biomaterial interactions
EP2527046A1 (en) 2003-07-29 2012-11-28 Intelligent Energy, Inc. Thin hydrogen separation membrane
US7423286B2 (en) * 2003-09-05 2008-09-09 Si2 Technologies, Inc. Laser transfer article and method of making
US6962765B2 (en) 2003-10-20 2005-11-08 Kodak Polychrome Graphics Llc Laser-generated ultraviolet radiation mask
US7485337B2 (en) 2004-05-27 2009-02-03 Eastman Kodak Company Depositing an organic layer for use in OLEDs
US7461938B2 (en) 2004-06-30 2008-12-09 Ophthonix, Inc. Apparatus and method for determining sphere and cylinder components of subjective refraction using objective wavefront measurement
US7332424B2 (en) * 2004-08-16 2008-02-19 International Business Machines Corporation Fluxless solder transfer and reflow process
US7358169B2 (en) 2005-04-13 2008-04-15 Hewlett-Packard Development Company, L.P. Laser-assisted deposition
GB0525847D0 (en) 2005-12-20 2006-02-01 Univ Bristol Parallel Laser Direct Write
TWI431380B (zh) 2006-05-12 2014-03-21 Photon Dynamics Inc 沉積修復設備及方法
WO2008036837A2 (en) 2006-09-20 2008-03-27 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
KR101563237B1 (ko) 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
US8101247B2 (en) 2007-06-19 2012-01-24 The United States Of America As Represented By The Secretary Of The Navy Sub-micron laser direct write
US8728589B2 (en) 2007-09-14 2014-05-20 Photon Dynamics, Inc. Laser decal transfer of electronic materials
US20090130427A1 (en) 2007-10-22 2009-05-21 The Regents Of The University Of California Nanomaterial facilitated laser transfer
KR20090041314A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
TWI375498B (en) 2007-11-21 2012-10-21 Ind Tech Res Inst High perfromance laser-assisted transferring system and transfer component
TW200945339A (en) 2007-12-19 2009-11-01 Koninkl Philips Electronics Nv Optical disk format for direct writing materials on a substrate
KR101689519B1 (ko) 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
DE102008057228A1 (de) 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle
US8056222B2 (en) 2008-02-20 2011-11-15 The United States Of America, As Represented By The Secretary Of The Navy Laser-based technique for the transfer and embedding of electronic components and devices
JP5238544B2 (ja) 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US7919340B2 (en) 2008-06-04 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
DE102008026727B3 (de) 2008-06-04 2009-07-30 Technische Universität Carolo-Wilhelmina Zu Braunschweig Trägersystem für die Lasermikrodissektion und den laserinduzierten Transport von biologischem Material und lebenden Zellen
US20110089412A1 (en) 2008-06-16 2011-04-21 Shigeo Fujimori Patterning method, production method of device using the patterning method, and device
CN102131950B (zh) 2008-06-19 2014-05-28 实用光有限公司 光感应图案
US20100123258A1 (en) * 2008-11-14 2010-05-20 Myung Jin Yim Low Temperature Board Level Assembly Using Anisotropically Conductive Materials
US8663754B2 (en) 2009-03-09 2014-03-04 Imra America, Inc. Pulsed laser micro-deposition pattern formation
US8021919B2 (en) 2009-03-31 2011-09-20 Infineon Technologies Ag Method of manufacturing a semiconductor device
ES2360778B1 (es) 2009-07-22 2012-05-03 Universidad De Barcelona Aparato y método para la impresión directa con l�?ser.
JP5323784B2 (ja) 2009-09-15 2013-10-23 フオン・アルデンネ・アンラーゲンテヒニク・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 微細構造を製造するための方法及び装置
ES2671594T3 (es) 2010-03-04 2018-06-07 INSERM (Institut National de la Santé et de la Recherche Médicale) Puesto de bioimpresión, ensamblaje que comprende dicho puesto de bioimpresión y método de bioimpresión
WO2011123285A1 (en) 2010-03-29 2011-10-06 Semprius, Inc. Selective transfer of active components
US20110278566A1 (en) 2010-05-17 2011-11-17 Industry-Academic Cooperation Foundation, Yonsei University Method of patterning thin film solution-deposited
GB201009847D0 (en) 2010-06-11 2010-07-21 Dzp Technologies Ltd Deposition method, apparatus, printed object and uses
DE102010043204A1 (de) 2010-08-10 2012-02-16 Von Ardenne Anlagentechnik Gmbh Verfahren und Verwendung einer Vorrichtung zur Erzeugung einer Schicht eines organischen Materials auf einem Substrat
EP2487215B1 (en) * 2011-02-11 2013-07-24 Henkel AG & Co. KGaA Electrically conductive adhesives comprising at least one metal precursor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5873511A (en) * 1997-05-08 1999-02-23 Shapiro; Herbert M. Apparatus and method for forming solder bonding pads
US7348270B1 (en) * 2007-01-22 2008-03-25 International Business Machines Corporation Techniques for forming interconnects

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