TWI672825B - 發光裝置及投影機 - Google Patents

發光裝置及投影機 Download PDF

Info

Publication number
TWI672825B
TWI672825B TW104142995A TW104142995A TWI672825B TW I672825 B TWI672825 B TW I672825B TW 104142995 A TW104142995 A TW 104142995A TW 104142995 A TW104142995 A TW 104142995A TW I672825 B TWI672825 B TW I672825B
Authority
TW
Taiwan
Prior art keywords
light
region
emitting device
layer
optical waveguide
Prior art date
Application number
TW104142995A
Other languages
English (en)
Chinese (zh)
Other versions
TW201624754A (zh
Inventor
西岡大毅
Original Assignee
日商精工愛普生股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商精工愛普生股份有限公司 filed Critical 日商精工愛普生股份有限公司
Publication of TW201624754A publication Critical patent/TW201624754A/zh
Application granted granted Critical
Publication of TWI672825B publication Critical patent/TWI672825B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/005—Projectors using an electronic spatial light modulator but not peculiar thereto
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Projection Apparatus (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW104142995A 2014-12-24 2015-12-21 發光裝置及投影機 TWI672825B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014260944A JP6421928B2 (ja) 2014-12-24 2014-12-24 発光装置およびプロジェクター
JP2014-260944 2014-12-24

Publications (2)

Publication Number Publication Date
TW201624754A TW201624754A (zh) 2016-07-01
TWI672825B true TWI672825B (zh) 2019-09-21

Family

ID=55072454

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104142995A TWI672825B (zh) 2014-12-24 2015-12-21 發光裝置及投影機

Country Status (6)

Country Link
US (1) US9690178B2 (enExample)
EP (1) EP3038171A1 (enExample)
JP (1) JP6421928B2 (enExample)
KR (1) KR20160078258A (enExample)
CN (1) CN105742960B (enExample)
TW (1) TWI672825B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6414464B2 (ja) * 2014-12-24 2018-10-31 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6551672B2 (ja) * 2015-08-17 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6551678B2 (ja) * 2015-10-29 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
US11217721B2 (en) * 2015-12-25 2022-01-04 Sony Corporation Light-emitting device and display apparatus
JP6998774B2 (ja) * 2016-01-13 2022-02-10 古河電気工業株式会社 半導体レーザ素子、チップオンサブマウント、および半導体レーザモジュール
US10690919B1 (en) 2017-02-17 2020-06-23 Facebook Technologies, Llc Superluminous LED array for waveguide display
JP7039857B2 (ja) 2017-04-24 2022-03-23 セイコーエプソン株式会社 発光装置およびプロジェクター
US10168537B1 (en) 2018-03-16 2019-01-01 Facebook Technologies, Llc Single chip superluminous light emitting diode array for waveguide displays
JP7105442B2 (ja) * 2018-08-06 2022-07-25 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7320770B2 (ja) * 2018-09-28 2023-08-04 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6981444B2 (ja) * 2019-04-01 2021-12-15 セイコーエプソン株式会社 発光装置、発光装置の製造方法、およびプロジェクター

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
US20110303924A1 (en) * 2010-06-11 2011-12-15 Seiko Epson Corporation Light-emitting device and projector
TW201203601A (en) * 2010-06-30 2012-01-16 Seiko Epson Corp Light-emitting device and projector
US20130301012A1 (en) * 2012-05-09 2013-11-14 Seiko Epson Corporation Light emitting device, super-luminescent diode, and projector
US20140240682A1 (en) * 2013-02-27 2014-08-28 Seiko Epson Corporation Semiconductor light-emitting device, super luminescent diode, and projector

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685035B2 (ja) * 1986-01-29 1994-10-26 株式会社日立製作所 光スイツチ
US5008889A (en) * 1989-11-06 1991-04-16 Wilson Keith E High-accuracy wavelength stabilization of angled-stripe super luminescent laser diode sources
JPH04282883A (ja) * 1991-03-11 1992-10-07 Toshiba Corp 光増幅装置
JP2000269600A (ja) * 1999-03-18 2000-09-29 Hitachi Cable Ltd 高出力広帯域光源及び光増幅デバイス
JP3889911B2 (ja) * 2000-03-10 2007-03-07 三菱化学株式会社 半導体発光装置およびその製造方法
JP2003156644A (ja) * 2001-11-21 2003-05-30 Seiko Epson Corp 方向性結合器および光通信用装置
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
KR100644967B1 (ko) * 2004-10-27 2006-11-15 한국과학기술연구원 다양한 크기의 양자점으로 이루어진 활성층을 이용하는고휘도 발광소자 및 그 제조 방법
JP4959962B2 (ja) * 2005-09-05 2012-06-27 株式会社東芝 光半導体素子の製造方法
US7747128B2 (en) * 2007-09-03 2010-06-29 Fuji Xerox Co., Ltd. Waveguide device
DE102008013896A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Laserlichtquelle
JP5429471B2 (ja) * 2009-09-18 2014-02-26 セイコーエプソン株式会社 プロジェクター
CN102055135B (zh) * 2009-11-04 2013-09-04 中国科学院半导体研究所 锥形光子晶体量子级联激光器及其制作方法
JP5703598B2 (ja) * 2010-06-11 2015-04-22 セイコーエプソン株式会社 発光装置、およびプロジェクター
JP5568406B2 (ja) 2010-08-18 2014-08-06 パナソニック株式会社 スーパールミネッセントダイオード
JP5950551B2 (ja) * 2011-11-30 2016-07-13 キヤノン株式会社 Ｓｄ−ｏｃｔシステムの駆動制御方法
DE102011055891B9 (de) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
US9158057B2 (en) * 2012-05-18 2015-10-13 Gerard A Alphonse Semiconductor light source free from facet reflections
JP6040790B2 (ja) * 2013-02-01 2016-12-07 セイコーエプソン株式会社 発光装置、スーパールミネッセントダイオード、およびプロジェクター
CN103824920B (zh) * 2014-03-07 2016-04-20 中国科学院半导体研究所 输出功率和光谱形状独立可调的发光二极管的制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
US20110303924A1 (en) * 2010-06-11 2011-12-15 Seiko Epson Corporation Light-emitting device and projector
TW201203601A (en) * 2010-06-30 2012-01-16 Seiko Epson Corp Light-emitting device and projector
US20130301012A1 (en) * 2012-05-09 2013-11-14 Seiko Epson Corporation Light emitting device, super-luminescent diode, and projector
US20140240682A1 (en) * 2013-02-27 2014-08-28 Seiko Epson Corporation Semiconductor light-emitting device, super luminescent diode, and projector

Also Published As

Publication number Publication date
TW201624754A (zh) 2016-07-01
CN105742960B (zh) 2019-08-02
US20160190385A1 (en) 2016-06-30
EP3038171A1 (en) 2016-06-29
US9690178B2 (en) 2017-06-27
KR20160078258A (ko) 2016-07-04
CN105742960A (zh) 2016-07-06
JP6421928B2 (ja) 2018-11-14
JP2016122705A (ja) 2016-07-07

Similar Documents

Publication Publication Date Title
JP6421928B2 (ja) 発光装置およびプロジェクター
JP5681002B2 (ja) 発光装置およびプロジェクター
JP6103202B2 (ja) 半導体発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP5679117B2 (ja) 発光装置、照射装置、およびプロジェクター
JP6414464B2 (ja) 発光装置およびプロジェクター
JP6020190B2 (ja) 発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP2013051340A (ja) 発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP7531805B2 (ja) 発光装置およびプロジェクター
JP6040790B2 (ja) 発光装置、スーパールミネッセントダイオード、およびプロジェクター
US10115866B2 (en) Light emitting device and projector
JP2021125622A (ja) 発光装置およびプロジェクター
JP6551678B2 (ja) 発光装置およびプロジェクター
JP5835561B2 (ja) 発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP5936017B2 (ja) 発光装置およびプロジェクター
JP2013074120A (ja) 発光装置、およびプロジェクター
JP2012244028A (ja) 発光装置及びプロジェクター
JP2011049416A (ja) 発光装置およびプロジェクター
JP2017037948A (ja) 発光装置およびプロジェクター
JP2017224703A (ja) 発光装置およびプロジェクター
JP2015087693A (ja) 発光装置およびプロジェクター
JP2017037977A (ja) 発光装置およびプロジェクター

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees