TWI671918B - 發光元件之製造裝置及其製造方法 - Google Patents

發光元件之製造裝置及其製造方法 Download PDF

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Publication number
TWI671918B
TWI671918B TW106114597A TW106114597A TWI671918B TW I671918 B TWI671918 B TW I671918B TW 106114597 A TW106114597 A TW 106114597A TW 106114597 A TW106114597 A TW 106114597A TW I671918 B TWI671918 B TW I671918B
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TW
Taiwan
Prior art keywords
transfer
substrate
processed
room
processing
Prior art date
Application number
TW106114597A
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English (en)
Chinese (zh)
Other versions
TW201806178A (zh
Inventor
Takaaki Ishikawa
石川孝明
Takaaki Kamimura
上村孝明
Noriyuki Hirata
平田教行
Original Assignee
Japan Display Inc.
日本顯示器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Japan Display Inc., 日本顯示器股份有限公司 filed Critical Japan Display Inc.
Publication of TW201806178A publication Critical patent/TW201806178A/zh
Application granted granted Critical
Publication of TWI671918B publication Critical patent/TWI671918B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW106114597A 2016-08-04 2017-05-03 發光元件之製造裝置及其製造方法 TWI671918B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016153361A JP6830772B2 (ja) 2016-08-04 2016-08-04 積層膜の製造装置、及び積層膜の製造方法
JP??2016-153361 2016-08-04

Publications (2)

Publication Number Publication Date
TW201806178A TW201806178A (zh) 2018-02-16
TWI671918B true TWI671918B (zh) 2019-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW106114597A TWI671918B (zh) 2016-08-04 2017-05-03 發光元件之製造裝置及其製造方法

Country Status (5)

Country Link
US (3) US10164218B2 (https=)
JP (1) JP6830772B2 (https=)
KR (2) KR101953268B1 (https=)
CN (2) CN111463365B (https=)
TW (1) TWI671918B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法
JP2020515026A (ja) * 2018-03-09 2020-05-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 真空処理システムおよび真空処理システムを動作させる方法
KR20200002242A (ko) * 2018-06-29 2020-01-08 캐논 톡키 가부시키가이샤 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법
JP7240980B2 (ja) * 2019-07-29 2023-03-16 東京エレクトロン株式会社 基板処理装置及び基板搬送方法
JP7759192B2 (ja) * 2020-05-12 2025-10-23 エーエスエム・アイピー・ホールディング・ベー・フェー 高スループットマルチチャンバ基材処理システム
US20240057462A1 (en) * 2020-12-25 2024-02-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing equipment of display device
KR20240034778A (ko) * 2021-07-16 2024-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 디바이스의 제조 장치
JP7747470B2 (ja) * 2021-09-06 2025-10-01 キヤノントッキ株式会社 成膜装置、基板搬送装置、基板搬送方法及び電子デバイスの製造方法
JP2023165324A (ja) * 2022-05-02 2023-11-15 キヤノン株式会社 異音診断システム、画像形成装置、異音診断方法およびプログラム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2587883Y (zh) * 2002-12-19 2003-11-26 铼宝科技股份有限公司 有机发光组件的沉积设备
TW201343345A (zh) * 2011-12-12 2013-11-01 Applied Materials Inc 在電子裝置製造中經調適以輸送多個基材的完全地獨立的機器人系統、設備及方法
TW201417263A (zh) * 2012-10-22 2014-05-01 三星顯示器有限公司 有機發光顯示裝置及其製造方法
TW201427138A (zh) * 2012-12-24 2014-07-01 三星顯示器有限公司 用於製造薄膜封裝之裝置及方法
TW201626617A (zh) * 2015-01-14 2016-07-16 史那精密股份有限公司 有機發光元件製造用群集型沉積裝置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211762A (ja) * 1994-01-13 1995-08-11 Hitachi Ltd ウエハ搬送処理装置
JPH07230942A (ja) * 1994-02-18 1995-08-29 Hitachi Ltd マルチチャンバシステム及びその制御方法
JPH08181184A (ja) * 1994-12-22 1996-07-12 Hitachi Ltd 半導体製造ラインの構成方法
TW442891B (en) * 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
JP3806802B2 (ja) * 2001-04-25 2006-08-09 株式会社アイテック ロボットハンドの駆動装置
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP4078813B2 (ja) * 2001-06-12 2008-04-23 ソニー株式会社 成膜装置および成膜方法
JP4096353B2 (ja) * 2002-05-09 2008-06-04 ソニー株式会社 有機電界発光表示素子の製造装置および製造方法
US7988398B2 (en) * 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
JP2004288463A (ja) * 2003-03-20 2004-10-14 Semiconductor Energy Lab Co Ltd 製造装置
US8313277B2 (en) * 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US20050223837A1 (en) * 2003-11-10 2005-10-13 Blueshift Technologies, Inc. Methods and systems for driving robotic components of a semiconductor handling system
JP5128918B2 (ja) * 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
US9353436B2 (en) * 2008-03-05 2016-05-31 Applied Materials, Inc. Coating apparatus with rotation module
WO2009109464A1 (en) * 2008-03-05 2009-09-11 Applied Materials Inc. Coating apparatus with rotation module
JP4934619B2 (ja) * 2008-03-17 2012-05-16 株式会社アルバック 有機ｅｌ製造装置及び有機ｅｌ製造方法
TWI424784B (zh) * 2008-09-04 2014-01-21 日立全球先端科技股份有限公司 Organic electroluminescent device manufacturing apparatus, manufacturing method thereof, film forming apparatus and film forming method
CN101667630A (zh) * 2008-09-04 2010-03-10 株式会社日立高新技术 有机el设备制造装置和其制造方法以及成膜装置和成膜方法
US20110097878A1 (en) * 2009-10-28 2011-04-28 Applied Materials, Inc. Chamber for pecvd
EP2489759B1 (en) * 2011-02-21 2014-12-10 Applied Materials, Inc. System for utilization improvement of process chambers and method of operating thereof
WO2013077322A1 (ja) * 2011-11-23 2013-05-30 日本電産サンキョー株式会社 ワーク搬送システム
KR20130074307A (ko) * 2011-12-26 2013-07-04 엘아이지에이디피 주식회사 척킹 및 디척킹 장치부를 갖는 유기발광소자 양산 시스템
JP6079200B2 (ja) * 2012-05-16 2017-02-15 東京エレクトロン株式会社 クーリング機構及び処理システム
JP2015007263A (ja) * 2013-06-24 2015-01-15 株式会社日立ハイテクノロジーズ 有機デバイス製造装置および有機デバイスの製造方法
JP6937549B2 (ja) * 2016-06-10 2021-09-22 株式会社ジャパンディスプレイ 発光素子の製造装置
JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2587883Y (zh) * 2002-12-19 2003-11-26 铼宝科技股份有限公司 有机发光组件的沉积设备
TW201343345A (zh) * 2011-12-12 2013-11-01 Applied Materials Inc 在電子裝置製造中經調適以輸送多個基材的完全地獨立的機器人系統、設備及方法
TW201417263A (zh) * 2012-10-22 2014-05-01 三星顯示器有限公司 有機發光顯示裝置及其製造方法
TW201427138A (zh) * 2012-12-24 2014-07-01 三星顯示器有限公司 用於製造薄膜封裝之裝置及方法
TW201626617A (zh) * 2015-01-14 2016-07-16 史那精密股份有限公司 有機發光元件製造用群集型沉積裝置

Also Published As

Publication number Publication date
JP2018022619A (ja) 2018-02-08
US20190305259A1 (en) 2019-10-03
US10367174B2 (en) 2019-07-30
US10164218B2 (en) 2018-12-25
CN111463365A (zh) 2020-07-28
KR20190022594A (ko) 2019-03-06
KR102039090B1 (ko) 2019-11-01
TW201806178A (zh) 2018-02-16
KR101953268B1 (ko) 2019-02-28
JP6830772B2 (ja) 2021-02-17
KR20180016253A (ko) 2018-02-14
CN107689429A (zh) 2018-02-13
CN111463365B (zh) 2023-05-26
US20180040856A1 (en) 2018-02-08
US20190051867A1 (en) 2019-02-14

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