JP6830772B2 - 積層膜の製造装置、及び積層膜の製造方法 - Google Patents

積層膜の製造装置、及び積層膜の製造方法 Download PDF

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Publication number
JP6830772B2
JP6830772B2 JP2016153361A JP2016153361A JP6830772B2 JP 6830772 B2 JP6830772 B2 JP 6830772B2 JP 2016153361 A JP2016153361 A JP 2016153361A JP 2016153361 A JP2016153361 A JP 2016153361A JP 6830772 B2 JP6830772 B2 JP 6830772B2
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Japan
Prior art keywords
substrate
processed
chamber
transport
transfer machine
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JP2016153361A
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Japanese (ja)
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JP2018022619A (ja
JP2018022619A5 (https=
Inventor
孝明 石川
孝明 石川
孝明 上村
孝明 上村
教行 平田
教行 平田
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Japan Display Inc
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Japan Display Inc
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Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2016153361A priority Critical patent/JP6830772B2/ja
Priority to TW106114597A priority patent/TWI671918B/zh
Priority to KR1020170082506A priority patent/KR101953268B1/ko
Priority to US15/644,923 priority patent/US10164218B2/en
Priority to CN202010289273.8A priority patent/CN111463365B/zh
Priority to CN201710662741.XA priority patent/CN107689429A/zh
Publication of JP2018022619A publication Critical patent/JP2018022619A/ja
Priority to US16/162,528 priority patent/US10367174B2/en
Priority to KR1020190021103A priority patent/KR102039090B1/ko
Priority to US16/447,478 priority patent/US20190305259A1/en
Publication of JP2018022619A5 publication Critical patent/JP2018022619A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016153361A 2016-08-04 2016-08-04 積層膜の製造装置、及び積層膜の製造方法 Active JP6830772B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2016153361A JP6830772B2 (ja) 2016-08-04 2016-08-04 積層膜の製造装置、及び積層膜の製造方法
TW106114597A TWI671918B (zh) 2016-08-04 2017-05-03 發光元件之製造裝置及其製造方法
KR1020170082506A KR101953268B1 (ko) 2016-08-04 2017-06-29 발광 소자의 제조 장치 및 그 제조 방법
US15/644,923 US10164218B2 (en) 2016-08-04 2017-07-10 Manufacturing device and manufacturing method of light-emitting element
CN202010289273.8A CN111463365B (zh) 2016-08-04 2017-08-04 发光元件的制造装置和制造方法
CN201710662741.XA CN107689429A (zh) 2016-08-04 2017-08-04 发光元件的制造装置和制造方法
US16/162,528 US10367174B2 (en) 2016-08-04 2018-10-17 Manufacturing method of a light emitting device
KR1020190021103A KR102039090B1 (ko) 2016-08-04 2019-02-22 발광 소자의 제조 방법
US16/447,478 US20190305259A1 (en) 2016-08-04 2019-06-20 Manufacturing device for light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016153361A JP6830772B2 (ja) 2016-08-04 2016-08-04 積層膜の製造装置、及び積層膜の製造方法

Publications (3)

Publication Number Publication Date
JP2018022619A JP2018022619A (ja) 2018-02-08
JP2018022619A5 JP2018022619A5 (https=) 2019-09-05
JP6830772B2 true JP6830772B2 (ja) 2021-02-17

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JP2016153361A Active JP6830772B2 (ja) 2016-08-04 2016-08-04 積層膜の製造装置、及び積層膜の製造方法

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Country Link
US (3) US10164218B2 (https=)
JP (1) JP6830772B2 (https=)
KR (2) KR101953268B1 (https=)
CN (2) CN111463365B (https=)
TW (1) TWI671918B (https=)

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JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法
JP2020515026A (ja) * 2018-03-09 2020-05-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 真空処理システムおよび真空処理システムを動作させる方法
KR20200002242A (ko) * 2018-06-29 2020-01-08 캐논 톡키 가부시키가이샤 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법
JP7240980B2 (ja) * 2019-07-29 2023-03-16 東京エレクトロン株式会社 基板処理装置及び基板搬送方法
JP7759192B2 (ja) * 2020-05-12 2025-10-23 エーエスエム・アイピー・ホールディング・ベー・フェー 高スループットマルチチャンバ基材処理システム
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JP7747470B2 (ja) * 2021-09-06 2025-10-01 キヤノントッキ株式会社 成膜装置、基板搬送装置、基板搬送方法及び電子デバイスの製造方法
JP2023165324A (ja) * 2022-05-02 2023-11-15 キヤノン株式会社 異音診断システム、画像形成装置、異音診断方法およびプログラム

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JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法

Also Published As

Publication number Publication date
JP2018022619A (ja) 2018-02-08
US20190305259A1 (en) 2019-10-03
US10367174B2 (en) 2019-07-30
US10164218B2 (en) 2018-12-25
CN111463365A (zh) 2020-07-28
KR20190022594A (ko) 2019-03-06
TWI671918B (zh) 2019-09-11
KR102039090B1 (ko) 2019-11-01
TW201806178A (zh) 2018-02-16
KR101953268B1 (ko) 2019-02-28
KR20180016253A (ko) 2018-02-14
CN107689429A (zh) 2018-02-13
CN111463365B (zh) 2023-05-26
US20180040856A1 (en) 2018-02-08
US20190051867A1 (en) 2019-02-14

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