TWI671868B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI671868B
TWI671868B TW105112228A TW105112228A TWI671868B TW I671868 B TWI671868 B TW I671868B TW 105112228 A TW105112228 A TW 105112228A TW 105112228 A TW105112228 A TW 105112228A TW I671868 B TWI671868 B TW I671868B
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package
semiconductor device
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TW105112228A
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TW201709436A (zh
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細見剛
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日商三菱電機股份有限公司
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Abstract

獲得一種可在封裝體封裝後一邊觀察內部，一邊輕易辨識封裝體外觀的半導體裝置。
半導體裝置係包括：具有電子零件3的半導體晶片2；及將半導體晶片2進行封裝的封裝體1。封裝體1係具有相對可見光為不透明且相對近紅外光或近紫外光為透明的透明部5。透明部5係被配置在電子零件3可由外部藉由近紅外光或近紫外光進行觀察的位置。

Description

半導體裝置
本發明係關於可在封裝體封裝後一邊觀察內部，一邊輕易辨識封裝體外觀的半導體裝置。
將電晶體、二極體或IC等半導體晶片收納在由金屬、陶瓷或樹脂等所構成的封裝體內的半導體裝置係逐漸被使用在各種電子機器。在該半導體裝置中，若異物混入至封裝體內部，在出貨前的電特性檢查中即使未發現異常，亦會有在出貨後使用期間因異物變形或部分成分使半導體晶片劣化，因此在半導體裝置的電特性引起異常的情形。因此，在組裝時，藉由光學顯微鏡觀察封裝體內及半導體晶片上，以檢查異物混入。但是，有在由封裝體內部之異物檢查後至封裝為止的期間混入異物的情形，在封裝後的電特性檢查時點，無法檢測出對電特性未造成異常的異物混入品。相對於此，提出一種使用可輕易視認經封裝的IC的透明封裝體的半導體裝置(參照例如專利文獻1)。
【先前技術文獻】
【專利文獻】
【專利文獻1】日本特開2002-881號公報
在封裝體上係被印上表示電極方向、製品名及製造編號等的標記。但是，若使用相對可見光為透明的封裝體時，被印在封裝體上的標記、及可看透封裝體的內部構造相重疊，難以讀取標記。此外，以外觀檢查，難以檢測封裝體表面的損傷。
本發明係用以解決如上所述之課題而完成者，其目的在獲得一種可在封裝體封裝後一邊觀察內部，一邊輕易辨識封裝體外觀的半導體裝置者。
本發明之半導體裝置包括：具有電子零件的半導體晶片；及將前述半導體晶片進行封裝的封裝體，其特徵為：前述封裝體係具有相對可見光為不透明且相對近紅外光或近紫外光為透明的透明部，前述透明部係被配置在前述電子零件可由外部藉由前述近紅外光或前述近紫外光進行觀察的位置。
在本發明中，封裝體的透明部係相對可見光為不透明，因此可輕易辨識封裝體外觀。此外，透明部相對近紅外光或近紫外光為透明，因此在封裝體封裝後，可藉由近紅外光或近紫外光來觀察內部。
1‧‧‧封裝體
2‧‧‧半導體晶片
3‧‧‧電子零件
4‧‧‧封裝體本體
5‧‧‧遮蓋(透明部)
6‧‧‧封裝體主材
7‧‧‧電氣配線
8‧‧‧晶粒接合材
9‧‧‧金屬細線
10‧‧‧接著劑
11‧‧‧標記
12‧‧‧基材
13‧‧‧透明導電膜
14‧‧‧可見光吸收材的膜
15‧‧‧封裝樹脂(透明部)
第1圖係顯示本發明之實施形態1之半導體裝置的剖面圖。
第2圖係顯示本發明之實施形態1之遮蓋的剖面圖。
第3圖係顯示本發明之實施形態2之半導體裝置的剖面圖。
參照圖示，說明本發明之實施形態之半導體裝置。對於相同或對應的構成要素係有標註相同符號且省略反覆說明的情形。
實施形態1.
第1圖係顯示本發明之實施形態1之半導體裝置的剖面圖。該半導體裝置亦非為受光元件及發光元件的任一者，而是例如微波通訊用高頻訊號放大元件、切換元件、振盪器、及MMIC(Monolithic Microwave Integrated Circuit，單晶微波積體電路)等。因此，以一般的元件的功能而言，並不需要透明的封裝體。
封裝體1封裝半導體晶片2。在半導體晶片2的上面係形成有電晶體、二極體或電路等電子零件3。封裝體1係具有：封裝體本體4、及遮蓋(cap)5。
封裝體本體4係具有：陶瓷或樹脂等封裝體主材6、及電氣配線7。半導體晶片2的背面藉由銀膠、金錫焊料或環氧樹脂等晶粒接合材8被固定在封裝體本體4。電氣配線7係在銅、鐵或鎳等合金鍍敷金、銀或錫等者，具有：封裝體內部的焊墊部、及被引出至封裝體外部的電極部。半導體晶片2的電子零件3與封裝體1的電氣配線7的焊墊部以金合金或銅合金等金屬細線9相連接。其中，在封裝體1內亦可收納電阻或電容器等半導體晶片2以外的電子零件。
遮蓋5係藉由環氧樹脂等接著劑10被固定在封裝體本體4，以覆蓋封裝體本體4的主面(第1圖中為上面)全體的方式構成。遮蓋5係相對可見光波長(380nm~780nm)為不透明且相對近紅外光(波長800nm~2500nm)或近紫外光 (波長200nm~380nm)為透明的透明部。因此，可透過遮蓋5，由封裝體1的外側觀察封裝體1內的半導體晶片2的電子零件3。在本實施形態中，覆蓋封裝體本體4的上面的遮蓋5全體構成為透明部，藉此半導體裝置的上面全體形成為透明部。其中，遮蓋5並不一定必須覆蓋半導體裝置的上面全體，亦可以封裝體本體4的外形大而以遮蓋5覆蓋封裝體本體4的上面的一部分的方式構成。此外，遮蓋5不僅封裝體本體4的上面，亦可覆蓋側面，亦可覆蓋上面及側面之雙方。
遮蓋5係將例如使用有機色素或無機顏料等吸收可見光的可見光吸收材，混合在透明的環氧樹脂或含氟化聚醯亞胺等透明基材而使其硬化來製作。
對經封裝的半導體裝置使用近紅外光的光源(例如波長890nm的紅外線LED)作為照明，以紅外線攝影機觀察而進行異物檢查之後，在遮蓋5上印上表示電極方向、製品名稱或製造編號等的標記11。
在本實施形態中，封裝體1的遮蓋5相對可見光為不透明，因此可藉由目視或可見光的畫像辨識，輕易地辨識標記11或損傷等封裝體1的外觀。此外，遮蓋5係相對近紅外光或近紫外光為透明，因此在封裝體1封裝後，可藉由近紅外光或近紫外光來觀察內部。因此，可進行封裝後的半導體裝置內部的異物檢查。此外，不僅異物檢查，亦可進行半導體晶片2是否位置偏移或破裂、配線是否彎曲等檢查。
第2圖係顯示本發明之實施形態1之遮蓋的剖面圖。遮蓋5係具有：透明樹脂或玻璃的基材12；以蒸鍍或濺鍍 被形成在其下面的氧化銦錫或氧化鋅等透明導電膜13；及被塗覆在基材12的上面的可見光吸收材的膜14。藉由透明導電膜13，欲由外部侵入至半導體裝置內的微波或毫米波等電磁波被屏蔽。因此，可抑制外來的電磁波侵入至半導體裝置而對動作造成影響的情形，可減低例如輸出訊號的雜音。
此外，以將遮蓋5固定在封裝體本體4的接著劑10而言，可使用以遮蓋5顯示透明性之紫外線予以硬化的紫外線硬化樹脂。此時，在封裝體本體4上放置紫外線硬化樹脂及遮蓋5後，由遮蓋5上方照射紫外線而使紫外線硬化樹脂硬化且固定遮蓋5。藉此，無須進行加熱，即可固定遮蓋5。因此，與使用熱硬化樹脂的情形相比，可以低溫且短時間使封裝完成。因此，可使用不耐熱的材料，亦可刪減製造工序的能量消耗。
紫外線硬化樹脂一般由單體、寡聚物或光聚合起始劑及其他添加劑所構成。若被照射光，光聚合起始劑發生離子，該離子與單體或寡聚物聚合，一般而言，與熱硬化樹脂相比，以低溫且短時間硬化。在紫外線硬化樹脂係有：丙烯酸系樹脂、環氧系樹脂或矽氧系樹脂等等，可輕易由市場(ThreeBond製、日立化成製、其他等)取得。其中，以接著劑10而言，不限於紫外線硬化樹脂，可使用以遮蓋5顯示透明性之近紅外光或近紫外光予以硬化的光硬化接著劑。
此外，亦可將半導體晶片2的側方的封裝體本體4形成為透明部。此時係由側方觀察封裝體1內部，藉此除了異物檢查之外，可檢測將半導體晶片2與封裝體1的電氣配線7相連接的金屬細線9的高度方向的形狀、或半導體晶片2的傾 斜。或者，亦將半導體晶片2的下方的封裝體本體4形成為透明部。此時係可檢查在以晶粒接合材8所固定的半導體晶片2的背面是否夾著異物。亦即，透明部若以可由外部觀察檢查對象的電子零件的方式進行配置即可，較佳為將半導體裝置的上面、下面、或側面的至少任一個的面全體構成為透明部、或將遮蓋5全體構成為透明部。
此外，遮蓋5亦可在透明的樹脂或玻璃的基材表面，以塗佈等塗覆可見光吸收材來製作。此外，亦可由市場(HOYA製、SIGMA光機製、其他)取得可見光非透過濾波器而適用在遮蓋5。
此外，以在近紅外光的波長為透明的遮蓋5的材料而言，亦可使用具有以1μm以下的波長為不透明且以1.2~6μm的波長為透明的特性的單晶矽。此時，可在異物檢查的光源，使用波長1300~1600nm的紅外線LED等來檢查封裝體1內。
實施形態2.
第3圖係顯示本發明之實施形態2之半導體裝置的剖面圖。本實施形態的封裝體1係以封裝樹脂15，藉由模塑成形，覆蓋且固定半導體晶片2、電氣配線7及金屬細線9者。封裝樹脂15係將可見光吸收材及透明樹脂加以混合者，為相對可見光為不透明且相對近紅外光或近紫外光為透明的透明部。以該構成亦可得與實施形態1相同的效果。

Claims (4)

  1. 一種半導體裝置，包括：半導體晶片，具有電子零件，前述電子零件包含電晶體或電路；及封裝體，將前述半導體晶片進行封裝，其特徵為：前述封裝體係具有相對可見光為不透明且相對近紅外光或近紫外光為透明的透明部，前述透明部為具有基材、透明導電膜及可見光吸收材的膜的遮蓋，前述透明部係被配置在檢查對象的前述電子零件可由外部藉由前述近紅外光或前述近紫外光進行觀察的位置，前述半導體裝置不進行光訊號的輸入及輸出而動作，為微波通訊用高頻訊號放大元件、切換元件、振盪器、及MMIC的任一者。
  2. 如申請專利範圍第1項之半導體裝置，其中，在前述透明部印有標記。
  3. 如申請專利範圍第1或2項之半導體裝置，其中，前述透明部的至少一部分具有導電性。
  4. 如申請專利範圍第1或2項之半導體裝置，其中，前述封裝體係具有：封裝體本體；及覆蓋前述封裝體本體的至少上面的一部分且為前述透明部的遮蓋，前述遮蓋係藉由以前述遮蓋顯示透明性之前述近紅外光或前述近紫外光予以硬化的光硬化接著劑，被固定在前述封裝體本體。
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