CN106469686B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN106469686B CN106469686B CN201610694218.0A CN201610694218A CN106469686B CN 106469686 B CN106469686 B CN 106469686B CN 201610694218 A CN201610694218 A CN 201610694218A CN 106469686 B CN106469686 B CN 106469686B
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- hyalomere
- packaging part
- cover
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/85411—Tin (Sn) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Led Device Packages (AREA)
Abstract
本发明得到一种在封装件的封装后能够观察内部,并且能够容易地辨识封装件的外观的半导体装置。半导体装置具有:半导体芯片(2),其具有电子部件(3);以及封装件(1),其将半导体芯片(2)封装。封装件(1)具有对可见光不透明而对近红外光或者近紫外光透明的透明部(5)。透明部(5)配置于能够通过近红外光或者近紫外光而从外部观察电子部件(3)的位置。
Description
技术领域
本发明涉及一种在封装件的封装后能够观察内部,并且能够容易地辨识封装件的外观的半导体装置。
背景技术
将晶体管、二极管或者IC等半导体芯片收容于由金属、陶瓷或者树脂等构成的封装件内的半导体装置逐渐地被使用于各种电子设备。在该半导体装置中,如果异物混入至封装件内部,则即使在出厂前的电特性检查未发现异常,有时也会在出厂后,在使用期间由于异物发生变形或者成分的一部分使半导体芯片劣化,从而引起半导体装置的电特性异常。因此,在组装时利用光学显微镜对封装件内及半导体芯片之上进行观察而检查异物混入。但是,在从封装件内部的异物检查后至封装为止的期间有时会混入异物,无法检测出在封装后的电特性检查的时候尚未造成电特性异常的异物混入品。对此,提出了一种能够容易地对被封装后的IC进行目视识别的使用了透明封装件的半导体装置(例如,参照专利文献1)。
专利文献1:日本特开2002-881号公报
在封装件之上,印制表示电极的方向、产品名以及制造编号等的标记。但是,在使用对可见光透明的封装件的情况下,印在封装件之上的标记与可透过封装件看到的内部构造相重合,难以读取标记。另外,变得难以通过外观检查而检测封装件表面的损伤。
发明内容
本发明就是为了解决上述的课题而提出的,其目的在于,得到一种在封装件的封装后能够观察内部,并且能够容易地辨识封装件的外观的半导体装置。
本发明涉及的半导体装置的特征在于,具有:半导体芯片,其具有电子部件;以及封装件,其将所述半导体芯片封装,所述封装件具有对可见光不透明而对近红外光或者近紫外光透明的透明部,所述透明部配置于能够通过所述近红外光或者所述近紫外光而从外部观察所述电子部件的位置。
发明的效果
本发明中,封装件的透明部对可见光不透明,因此能够容易地辨识封装件的外观。另外,由于透明部对近红外光或者近紫外光透明,因此在封装件的封装后,能够通过近红外光或者近紫外光而观察内部。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的剖视图。
图2是表示本发明的实施方式1涉及的盖部的剖视图。
图3是表示本发明的实施方式2涉及的半导体装置的剖视图。
标号的说明
1封装件,2半导体芯片,3电子部件,4封装件主体,5盖部(透明部),10粘接剂,11标记,15封装树脂(透明部)
具体实施方式
参照附图,对本发明的实施方式涉及的半导体装置进行说明。对相同或对应的结构要素标注相同的标号,有时省略重复的说明。
实施方式1.
图1是表示本发明的实施方式1涉及的半导体装置的剖视图。该半导体装置既不是受光器件也不是发光器件,例如为微波通信用高频信号放大器件、开关器件、振荡器、以及MMIC(Monolithic Microwave Integrated Circuit)等。因此,作为通常的器件的功能来说,无需透明的封装件。
封装件1将半导体芯片2封装。在半导体芯片2的上表面形成有晶体管、二极管或者电路等电子部件3。封装件1具有封装件主体4和盖部5。
封装件主体4具有电气配线7和陶瓷、树脂等的封装件主材料6。半导体芯片2的背面通过银膏、金锡焊料或者环氧树脂等芯片接合材料8而固定于封装件主体4。电气配线7是对铜、铁或者镍等的合金镀敷金、银或者锡等而成的,具有封装件内部的焊盘部和引出至封装件外部的电极部。半导体芯片2的电子部件3与封装件1的电气配线7的焊盘部通过金合金或者铜合金等的金属细线9而进行连接。此外,也可以在封装件1内收容电阻或者电容器等除了半导体芯片2以外的电子部件。
盖部5通过环氧树脂等粘接剂10而固定于封装件主体4,以覆盖封装件主体4的主面(在图1为上表面)整体的方式而构成。盖部5是对可见光(波长380nm~780nm)不透明而对近红外光(波长800nm~2500nm)或者近紫外光(波长200nm~380nm)透明的透明部。因此,能够经由盖部5而从封装件1的外侧观察封装件1内的半导体芯片2的电子部件3。在本实施方式中,覆盖封装件主体4的上表面的盖部5整体构成为透明部,从而半导体装置的上表面整体形成为透明部。此外,盖部5并不是必须覆盖半导体装置的上表面整体,也可以构成为封装件主体4的外形较大,盖部5覆盖封装件主体4的上表面的一部分。并且,盖部5不仅可以覆盖封装件主体4的上表面,也可以覆盖侧面,还可以覆盖上表面和侧面两者。
盖部5是例如将使用了有机色素、无机颜料等的吸收可见光的可见光吸收材料与透明的环氧树脂、含氟聚酰亚胺等透明基材混合并硬化而制作的。
在使用近红外光的光源(例如波长890nm的红外线LED)作为照明,通过红外照相机观察封装后的半导体装置而进行了异物检查之后,在盖部5之上印制表示电极的方向、产品名或者制造编号等的标记11。
在本实施方式中由于封装件1的盖部5对可见光不透明,因此通过目视、可见光的图像辨识,能够容易地辨识标记11或者损伤等封装件1的外观。另外,由于盖部5对近红外光或者近紫外光透明,因此在封装件1的封装后,能够通过近红外光或者近紫外光而观察内部。因此,能够进行封装后的半导体装置内部的异物检查。另外,不仅能够进行异物检查,还能够进行半导体芯片2是否没有位置偏移或者没有破裂、配线是否没有弯曲等的检查。
图2是表示本发明的实施方式1涉及的盖部的剖视图。盖部5具有:透明树脂或者玻璃的基材12;氧化铟锡、氧化锌等的透明导电膜13,其通过蒸镀、溅射而形成于基材12的下表面;以及可见光吸收材料的膜14,其涂敷于基材12的上表面。利用透明导电膜13,屏蔽试图从外部侵入至半导体装置内的诸如微波或者毫米波等电磁波。因此,能够抑制外来的电磁波侵入至半导体装置而对动作造成影响,例如能够减少输出信号的噪声。
另外,作为将盖部5固定于封装件主体4的粘接剂10而能够使用紫外线硬化树脂,该紫外线硬化树脂通过盖部5表现出透明性的紫外线而硬化。在该情况下,在封装件主体4之上设置紫外线硬化树脂和盖部5之后,从盖部5上方照射紫外线,使紫外线硬化树脂硬化,对盖部5进行固定。由此,无需进行加热即可将盖部5进行固定。因此,与使用热硬化树脂的情况相比,能够以低温且短时间完成封装。因此,能够使用耐热性差的材料,也能够削减制造工序的能量消耗。
紫外线硬化树脂通常由单体、齐聚物或者光聚合引发剂和其他添加剂构成。如果照射了光,则光聚合引发剂产生离子,该离子与单体或者齐聚物聚合,与热硬化树脂相比,通常以低温且短时间进行硬化。作为紫外线硬化树脂,存在丙烯酸类树脂、环氧类树脂或者硅类树脂等,能够容易地从市场(“スリーボンド”制、“日立化成”制、其他等)取得。此外,作为粘接剂10,不限于紫外线硬化树脂,也能够使用通过盖部5表现出透明性的近红外光或者近紫外光而硬化的光硬化粘接剂。
另外,也可以将半导体芯片2的侧方的封装件主体4设为透明部。在该情况下,通过从侧方观察封装件1内部,能够在异物检查的基础上,还对将半导体芯片2与封装件1的电气配线7连接的金属细线9的高度方向的形状、半导体芯片2的倾斜度进行检查。或者,也可以将半导体芯片2的下方的封装件主体4设为透明部。在该情况下,能够对在利用芯片接合材料8固定的半导体芯片2的背面是否没有夹杂异物进行检查。即,透明部配置为能够从外部对作为检查对象的电子部件进行观察即可,更为优选的是,将半导体装置的上表面、下表面或者侧面中的至少任一面整体构成为透明部,或将盖部5整体构成为透明部。
另外,盖部5也可以通过在透明的树脂或者玻璃的基材表面通过涂布等而涂敷可见光吸收材料来制作。另外,也能够从市场(HOYA制、“シグマ光機”制、其他)取得可见光截止滤光片而应用于盖部5。
另外,作为对近红外光的波长透明的盖部5的材料,也可以使用具有对小于或等于1μm的波长不透明而对1.2~6μm的波长透明这一特性的单晶硅。在该情况下,能够使用波长1300~1600nm的红外线LED等作为异物检查的光源而对封装件1内进行检查。
实施方式2.
图3是表示本发明的实施方式2涉及的半导体装置的剖视图。本实施方式的封装件1是利用封装树脂15将半导体芯片2、电气配线7以及金属细线9通过模塑成型进行覆盖固定而成的。封装树脂15是将可见光吸收材料和透明树脂混合而成的,是对可见光不透明而对近红外光或者近紫外光透明的透明部。该结构也能够取得与实施方式1同样的效果。
Claims (4)
1.一种半导体装置,其特征在于,具有:
半导体芯片,其具有包含晶体管或电路的电子部件;以及
封装件,其将所述半导体芯片封装,
所述封装件具有对可见光不透明而对近红外光或者近紫外光透明的透明部,
所述透明部是具有基材、透明导电膜以及可视光吸收材料的膜的盖层,
所述透明部配置于能够通过所述近红外光或者所述近紫外光而从外部观察作为检查对象的所述电子部件的位置,
所述半导体装置为微波通信用高频信号放大器件、开关器件、振荡器、以及MMIC中的任一个。
2.根据权利要求1所述的半导体装置,其特征在于,
在所述透明部印有标记。
3.根据权利要求1或2所述的半导体装置,其特征在于,
所述透明部的至少一部分具有导电性。
4.根据权利要求1或2所述的半导体装置,其特征在于,
所述封装件具有封装件主体和盖部,该盖部覆盖所述封装件主体的至少上表面的一部分,并且该盖部是所述透明部,
所述盖部通过光硬化粘接剂而固定于所述封装件主体,该光硬化粘接剂通过所述盖部表现出透明性的所述近红外光或者所述近紫外光而硬化。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-163055 | 2015-08-20 | ||
JP2015163055A JP6477355B2 (ja) | 2015-08-20 | 2015-08-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106469686A CN106469686A (zh) | 2017-03-01 |
CN106469686B true CN106469686B (zh) | 2019-05-14 |
Family
ID=58157817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610694218.0A Active CN106469686B (zh) | 2015-08-20 | 2016-08-19 | 半导体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9711460B2 (zh) |
JP (1) | JP6477355B2 (zh) |
CN (1) | CN106469686B (zh) |
TW (1) | TWI671868B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019507899A (ja) * | 2016-01-21 | 2019-03-22 | スリーエム イノベイティブ プロパティズ カンパニー | 光学カモフラージュフィルター |
US10535812B2 (en) * | 2017-09-04 | 2020-01-14 | Rohm Co., Ltd. | Semiconductor device |
JP7417029B2 (ja) * | 2018-12-14 | 2024-01-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3035021B2 (ja) * | 1991-08-29 | 2000-04-17 | 株式会社リコー | 液晶表示素子およびその製造方法 |
TW201318112A (zh) * | 2011-08-30 | 2013-05-01 | Qualcomm Mems Technologies Inc | 以玻璃作為基板材料以及用於微機電系統及積體電路裝置之最終封裝 |
CN104411620A (zh) * | 2012-05-04 | 2015-03-11 | 高通Mems科技公司 | 透明衬底中的透明穿透玻璃导电通孔 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61162515A (ja) * | 1985-01-11 | 1986-07-23 | Nec Corp | 樹脂組成物及びそれを用いた樹脂封止型半導体装置 |
JP2000157702A (ja) | 1998-11-24 | 2000-06-13 | Sanyo Bussan:Kk | 遊技機制御用icパッケージ |
JP2000254318A (ja) | 1999-03-05 | 2000-09-19 | Sankyo Kk | 遊技機 |
JP2002000881A (ja) | 2000-06-26 | 2002-01-08 | Toyomaru Industry Co Ltd | 遊技機 |
TW480684B (en) | 2001-04-13 | 2002-03-21 | Taiwan Electronic Packaging Co | Package of IC chip |
US7807972B2 (en) * | 2005-01-26 | 2010-10-05 | Analog Devices, Inc. | Radiation sensor with cap and optical elements |
JP2007234763A (ja) * | 2006-02-28 | 2007-09-13 | Sharp Corp | 半導体装置およびその製造方法 |
JP5842118B2 (ja) * | 2010-06-24 | 2016-01-13 | パナソニックIpマネジメント株式会社 | 赤外線センサ |
US9161449B2 (en) * | 2013-10-29 | 2015-10-13 | Lite-On Technology Corporation | Image sensor module having flat material between circuit board and image sensing chip |
-
2015
- 2015-08-20 JP JP2015163055A patent/JP6477355B2/ja active Active
-
2016
- 2016-04-19 US US15/132,302 patent/US9711460B2/en active Active
- 2016-04-20 TW TW105112228A patent/TWI671868B/zh active
- 2016-08-19 CN CN201610694218.0A patent/CN106469686B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3035021B2 (ja) * | 1991-08-29 | 2000-04-17 | 株式会社リコー | 液晶表示素子およびその製造方法 |
TW201318112A (zh) * | 2011-08-30 | 2013-05-01 | Qualcomm Mems Technologies Inc | 以玻璃作為基板材料以及用於微機電系統及積體電路裝置之最終封裝 |
CN104411620A (zh) * | 2012-05-04 | 2015-03-11 | 高通Mems科技公司 | 透明衬底中的透明穿透玻璃导电通孔 |
Also Published As
Publication number | Publication date |
---|---|
US20170053877A1 (en) | 2017-02-23 |
US9711460B2 (en) | 2017-07-18 |
JP6477355B2 (ja) | 2019-03-06 |
TW201709436A (zh) | 2017-03-01 |
CN106469686A (zh) | 2017-03-01 |
JP2017041561A (ja) | 2017-02-23 |
TWI671868B (zh) | 2019-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10410972B2 (en) | Integrated module with electromagnetic shielding | |
CN106469686B (zh) | 半导体装置 | |
US20130001409A1 (en) | Optical sensor device | |
US20180035548A1 (en) | Patterned layer compound | |
US11817383B2 (en) | Packaging technologies for temperature sensing in health care products | |
CN109585421A (zh) | 带有电磁屏蔽的双面模块 | |
US9209101B2 (en) | Semiconductor package with a conductive shielding member | |
US10096567B2 (en) | Package substrate and package | |
US20170123101A1 (en) | Proximity sensor, electronic apparatus and method for manufacturing proximity sensor | |
US10403617B2 (en) | Fingerprint recognition module having light-emitting function and manufacturing method therefor | |
CN109196657A (zh) | 光学模块、模块及其制造方法 | |
US20170330838A1 (en) | Semiconductor package | |
JP2017228779A (ja) | 光学的封止構造体 | |
KR100593555B1 (ko) | 화상카메라 모듈 | |
US10396111B2 (en) | Package for an optical sensor, optical sensor arrangement and method of producing a package for an optical sensor | |
TW201532205A (zh) | 微機電晶片封裝及其製造方法 | |
US10192842B2 (en) | Package for environmental parameter sensors and method for manufacturing a package for environmental parameter sensors | |
JP2003188453A (ja) | 光電子装置 | |
TWM449351U (zh) | 感測器封裝模組 | |
US20160368098A1 (en) | Method of manufacturing electronic components and corresponding electronic component | |
US20240077616A1 (en) | Time-of-flight sensor and manufacturing method thereof | |
KR100828971B1 (ko) | 자외선을 이용한 투명기판 상의 칩 또는 스트랩 실장방법 | |
KR100729007B1 (ko) | 접촉 이미지 캡쳐 구조 | |
JP2004253455A (ja) | 半導体装置およびその製造方法 | |
DE102005021700A1 (de) | Druckstabiler, transluzenter, sterilisationsgerechter Schutzmantel für elektrische oder elektronische Bauelemente |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |